Mark Pinto

NEW MANUFACTURING TECHNOLOGY FOR CLEAN ENERGY UC Santa Barbara November 9, 2009

EXTERNAL USE

Applied Materials – Who We Are  Founded in 1967 in Silicon Valley  Global leader in Nanomanufacturing Technology™ solutions with a portfolio of equipment, service and software products for the fabrication of: – – – – –

Semiconductor chips (#1) Flat panel displays (#1) Solar PV modules (#1) Flexible electronics Energy efficient glass

 NASDAQ-100, S&P 500, Fortune 500  Invest $1B in R&D per year for 5 years  Extensive global interactions – Operate in > 20 countries – Revenue typically > 80% outside US 2

EXTERNAL USE

Nanotechnology and Nanoelectronics  “I can hardly doubt that when we have some control of the arrangement of things on a small scale, we will get an enormously greater range of possible properties that substances can have, and of different things that we can do.” – R. Feynman (1959)  “The aim of electronics should be … to perform needed systems functions as directly, as simply, and as economically as possible from relevant knowledge of energy-matter interactions” – J. A. Morton (1965) 3

EXTERNAL USE

SiGe

SiGe

Nanomanufacturing Technology Small features on a large production scale

p? U ale Sc

Ad d Inn itiona ova l tion

Placing a nanotube?

More Than Nanofabrication – Repeatable, Robust, Reliable, Controllable and Cost Effective 4

EXTERNAL USE

Miniaturization: Benefits to Transistor Scaling 1T

100

DSP AA Battery Hours

45nm

Bits/Chip

90nm 0.25um

1G 1um

1M

1K 1975

1985

1995

2005

2015

Year

Speech 50

Video

0

0

0.2

0.4

0.6

Technology (um)

Classic scaling = decrease dimensions by k and drop voltage by k:  Circuit area reduced by 1/k2, speed increased by k  Power per circuit reduced by 1/k2, power per area constant

5

EXTERNAL USE

0.8

Average Cost Per Transistor

Moore's Law and the VLSI Learning Curve 1968

$1.00

1978

1¢ $1B

"Reduced cost is one of the big attractions of integrated electronics, and the cost advantage continues to increase as the technology evolves toward the production of larger and larger circuit functions on a single semiconductor substrate," – Gordon Moore, 1965

1m¢

1988 1998 $200

100n$

2008F Nanoelectronics Era

1n$ 1

1K

1M

1B

Number of Transistors Produced (Adapted from G. Moore, ISSCC 2003) 6

EXTERNAL USE

1T

Critical and Common Driver: Cost Per Function

Process Cost Area Cost Function (Good) Function Area

7

EXTERNAL USE

Cost Per Function: VLSI Technology

Process Cost Area Cost Function (Good) Function 193nm SADP

Area

Scaling has been the primary cost driver for ICs – but not at an overcompensating increase in process cost/area 8

EXTERNAL USE

Integrated Hi-k/Metal Gate Stack Processing Metal Gates for nMOS and pMOS

Hi-K layer for low leakage

Graded transition layer

9

EXTERNAL USE

High mobility interface layer

Flat Panel Display (LCD) Manufacturing Production Cost per Area (k$/m2)

LCD Industry Revenue ($B) 120

100

2011 60 ” ~$1000

100 80

10

60 40

2008 42 ” ~$1000

1 2004 20 ” ~$1000

20 0

> 20% Bigger (HD)TV Every Year for the Same Price 10

EXTERNAL USE

2009 2010

2006 2007 2008

2004 2005

2001 2002 2003

1998 1999 2000

1995 1996 1997

1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008

0.1

TFT-LCD Manufacturing Process Array Process

CF Process

Cell Process

Glass Substrate

Form Black Matrix

Sputtering CVD

Coat color resist

Coat Photoresist

Expose

Develop

Etch Strip Photoresist

Expose through mask

Rub

Completed Cell

Tab IC

Apply Sealant Attach Spacers

Develop, Post, Bake

Panel Assembly

Repeat for Green and blue

Inject LC

Apply protective film

Bond Drivers to Glass & PCB

Backlight Unit

Seal Deposit ITO common electrode

Completed array structure/ Array test

Source: Display Search 11

Apply Pl film

Module Process

EXTERNAL USE

Attach Polarizers

Completed TFT Module

Cost Per Function: Flat Panel Displays Process Cost Area Applied PECVD 5.7

Cost Function (Good) Function Area

AKT-PIVOT™ 55KV PVD

Courtesy Sharp

12

Cost per area tends to be an equivalent or predominant factor in applications other than VLSI

EXTERNAL USE

Flat Panel Display Equipment – PECVD Gen 10 AKT-90K PECVD

Gen 2 1st Release

2/ '93~

Gen 3 / 3.5 4/ '95~

Gen 4

Gen 5

Gen 5

Gen 5.5

Gen 6

Gen 7 / 7.5

Gen 8

1/ '00~

8/ '01~

6/ '02~

8/ '04~

5/ '03~

7/ '04~

2006

ACLS

ACLS

ACLS

ACLS

ACLS

System Layout

Model Substrate Size (mm)

1600 370x470 400x500

3500 / 4300 / 4300A 5500/5500A 550x650 680x880 600x720 730x920 620x750

10K

15K / 15KA

20K

25K / 25KA

40K / 40KA

1000x1200

1100x1250 1200x1300

1300x1500

1500x1800 1500x1850

1870x2200 1950x2250

Gen 10 = 60nm uniformity over ~

Substrate Area

13

2,000 cm2

4,650 cm2

6,716 cm2

12,000 cm2

15,600 cm2

(1.00)

(2.33 from 1600)

(1.44 from 4300)

(1.79 from 5500)

(1.30 from 10K)

19,500 cm2

(1.25 from 15 K)

EXTERNAL USE

1019

nm2

50K 2160x2460

area at 50sph

27,750 cm2

41,140 cm2

53,136 cm2

(1.78 from 15 K)

(1.52 from 25 K)

(1.21 from 40 KA)

Nanomanufacturing Opportunities In Energy

Energy Conservation

Energy Generation

Energy Storage

Technology to improve performance, form and cost

14

EXTERNAL USE

Nanomanufacturing Opportunities In Energy

Energy Conservation

Energy Generation

Energy Storage

Technology to improve performance, form and cost

15

EXTERNAL USE

US Electricity Usage Residential (2001) Other, 10%

Commercial (2003)

HVAC, 31% Other, 15%

Laundry, 7%

Office Equipment, 6%

Home Electronics, 7%

Refrigeration 11%

Lighting, 9% Water Heater, 9%

Kitchen Appliances, 27%

HVAC, 30%

HVAC and Lighting are major uses of electricity Source: EIA 16

EXTERNAL USE

Lighting, 38%

Reducing HVAC Energy: Architectural Coated Glass Cost Reductions Achieved with Low -e Coatings

600

Phoenix 500

400

San Antonio 300

Low-e Coatings 2000 ft2 house with 300 ft2 of windows

17

EXTERNAL USE

Annual Energy Expenditures ($)

700

Increasing Adoption of Coated Glass Bird’s Nest Stadium (Beijing) Shanghai SYP Engineering Glass Co. 10,000m2 of high performance Low-E glass

Burj Dubai (UAE)

Main Triangle Building (Frankfurt)

Guardian Industries

100,000m2 SunGuard® Solar Control and Low-E coated glass

House of Sweden (Washington DC) AGC Flat Glass

5500m2 Stopray® Elite and Stopray® Carat glass

Savings from 2007 Global Output ~ 36,000 Bbl/day† † Equivalent to 12 oil wells or 18Mt CO2 18

EXTERNAL USE

Guardian Industries

15,000m2 SunGuard® Solar Control and Low-E coated glass

Large Area Glass Coating Systems

 Glass Substrate is ~ 2.6 m x 3.6 m – Uniformity Spec of +/- 1% on 275 nm film (10 layer Triple Low e stack)

 18 Chamber System ~ 90m: one panel every 20 sec – Annual output ~ 10 million m2 (10 km2) 19

EXTERNAL USE

Electrochromic "Smart Glass"

Key Requirements for Market Adoption:  Performance: Energy efficiency, lifetime  Form: Color selection, match non-EC panes, pane-to-pane consistency, large size panes, on-off  Cost: At least comparable to Low-e glass + shades Typical Structure  ~ 10 metal/dielectric layers, most < 100nm thick (up to ~ 500nm) Images courtesy of Sage Electrochromics 20

EXTERNAL USE

Lighting Sources for General Illumination Device HB-LED

2002

2007

2010

2012

2015

Efficacy, lm/W

25

68

113

135

168

Lifetime, Khrs

20

37

50

50

50

$200

$37

$10

$5

$2

Efficacy, lm/W

18

35

53

100

Lifetime, Khrs

2

16

25

40

$139

$52

$27

$10

Metric

Cost*, $/klm

OLED

Cost*, $/klm Efficacy, lm/W

10-18

Lifetime, Khrs

1 $0.4

Cost*, $/klm Efficacy, lm/W

35-60

Lifetime, Khrs

10

Cost*, $/klm

$2

Need ~ 10x Lumens Cost Reduction for General Illumination Source: DOE, SSL Program 21

*Capital Cost EXTERNAL USE

Improvements to Reach 10X Cost Reduction Manufacturing Cost ≥ 2x reduction $/m2

Reducing HB LED $/lm Luminous Efficacy ≥ 4x increase lm/m2 Luminous Efficiency ≥ 2x increase lm/watt

22

Power Density ≥ 2x increase watts/m2

EXTERNAL USE

Complementary SSL Approaches

InGaN MQWs

uGaN + n-GaN

HBLED Point Sources and Backlights Focus on efficacy, R2R uniformity, COC/COO

OLED Large Area Tiles Focus on efficacy, lifetime, COC/COO

23

EXTERNAL USE

Building HBLED Off a Strong Foundation

SiGe

SiGe

Applied Centura®: Leader in Si/SiGe epi for ICs

"With this new reactor, you can produce run after run of LEDs in production quantities, to the tightest specs …without tearing down the system between runs." (1971)

24

EXTERNAL USE

Applied OLED deposition tool in pilot production

LED Near Term Focus on Backlight Inflection

Relative LED Unit Shipments

General Illumination

Backlighting

Specialty LED

1980

25

1990

2000

EXTERNAL USE

2010F

2020F

Nanomanufacturing Opportunities In Energy

Energy Conservation

Energy Generation

Energy Storage

Technology to improve performance, form and cost

26

EXTERNAL USE

Solar/PV and the 1970s Energy Crisis  "I will soon submit legislation to Congress calling for the creation of this Nation's first solar bank, which will help us achieve the crucial goal of 20 percent of our energy coming from solar power by the year 2000." – Jimmy Carter, 1979 Removed 1986

Installed 1979

White House West Wing - 1984

White House West Wing - 1992

 "The administration has significantly reoriented the country's approach to energy matters in the past 2 years." – Ronald Reagan, 1983 27

EXTERNAL USE

The Problem was the Economics… Electricity Prices – 1980

(Constant 2000 Currency)

Cents Per kWh

100

Retail Electricity

80

Wind

60

Solar PV

40

Solar Thermal

20 Includes: No incentives No Carbon impact

0 Sources: NREL, DOE 28

EXTERNAL USE

Solar PV Learning Curves: cSi and TF $100 Historical Prices

$ Production / Watt

Cost / m2 =

Module Price (2006 $/Wp)

Watt / m2 > $1 per kWh equivalent PV electricity cost

1980

c-Si

$10

Polysilicon shortage Ideal for large ground mounted systems due to cost and scale

$2

Thin Thin Film Film

2007 2008 2007 2008 2009

2009

$1.00/W @ <20 GW

Broadest applications, dominant for rooftops

cSi

$1.00/W @ >100 GW

$1 1

10

100

1,000

10,000

Cumulative Production (MWp)

Common focus to drive down cost per watt 29

Source: Adapted from National Renewable Energy Laboratory EXTERNAL USE

100,000

1,000,000

Behind the PV Learning Curve

$ Production / Watt

Cost / m2 = Watt / m2

30

EXTERNAL USE

Crystalline Silicon PV Value Chain Poly-Si Feedstock

Ingot Production

Wafer or Sheet Production

Cell Production

MC

Cz

31

EXTERNAL USE

Module Assembly

Distribution, Integration & Installation

Crystalline Solar Cells: Working Principle Front contact Ar and passivation coating (Silicon Nitride)

H

H

+ H

Passivated dangling bond (surface passivation) H passivated dangling bond (volume passivation)

+

+

-

-

+

H

A

-

H

electron trap (dangling bond)

 Increase efficiency by optimized light coupling  Increase efficiency by passivating dangling bonds  Homogeneous optical appearance P-type crystalline silicon wafer with diffused N-type emitter and back surface field (BSF) Metal back contact

Keys: Thin wafers + low process cost + conversion efficiency 32

EXTERNAL USE

High Productivity Silicon Wafering

Applied MaxEdge™

    

4 ingots concurrently Dual wire per motor pair 20 m/sec wire speed ~ 24K wafers per cut* > 13MWp per year

* with 120µm wire 33

EXTERNAL USE

Thin Wafer Processing

34

EXTERNAL USE

Advanced Multi-Layer Passivation  Low Interface State Density  Optically Thin  Stable After Contact Firing

Lifetime (!Sec)

4000 3000 2000 1000 0 Nitride

Composite Stack

High Thruput, Uptime, Uniformity + Tailored (Nano) Thin Films 35

EXTERNAL USE

High Throughput Printing Technology

Double Print 60µm 80µm

Selective Emitter  High throughput (1000-3000wph)  Low breakage for thin wafers (to 100um)  Aligned printing accuracy (~10um)  Additional print steps to increase efficiency 36

EXTERNAL USE

High Efficiency Commercial Silicon PV Cells All Back Contact (Sunpower)

HIT Cell (Sanyo)

• Back contact structure minimizes series resistance and recombination loss • 22.4% cell efficiency achieved

• Heterointerface creates a minority carrier mirror and improves thermal dependence • 22.3% cell efficiency achieved

Source: D. DeCeuster et.al., Eur. PVSEC-22, 2007

Source: Y. Tsunomura et.al., Intl. PVSEC-17, 2007

Comes at Additional Process Complexity 37

EXTERNAL USE

Integrated Process Control: From Tool to Factory Level

• Higher efficiency processes add steps • 9 → 14 can add ~ 3% efficiency • Integrated factory control avoids increased spread in efficiency distribution 38 38

EXTERNAL USE

Thin Film PV Value Chain Wafer or Sheet Production

Cell Production (Si, CdTe, CIS)

Module Assembly

Cut Slabs & Coupons Bond Electrodes Cut Cells

Short Passivation & Cell Definition

Finishing & Framing Hi-Pot Test

Laminate & Autoclave Module Test & Ship

Source: Unisolar

FOV: 200.0 !m !

39

139

flexi-solar

EXTERNAL USE

10.000 keV

50.0 !m 11/29/2007

Distribution, Integration & Installation

Basic Single Junction a-Si Solar Cell 6-6.5% Efficient with Production Costs ~$1.00-1.25/Wp Standard soda-lime glass for single junction; possible low iron glass for tandem junction

“TCO” -- Typically provided by glass company; tandem structures may use ZnO

PECVD deposition – most important for efficiency, capital and operating costs

PVD deposition (RF sputter)

Interconnections formed by laser scribe

PVD deposition

Keys: Large substrates + low process cost + conversion efficiency 40

EXTERNAL USE

SunFab Thin Film PV Production Line SunFab™ 5.7m2 TF Module

Cost / m2 Watt / m2 Leverage Learning in LCD to Drive Costs with Large Area Processing 41 41 11 41

EXTERNAL USE

SunFab™ 5.7m2 TF Production Line

Platt's Green Energy Innovator of the Year Award (2007) Wall Street Journal Technology Innovation Award – Energy (2008) 42

EXTERNAL USE

(Illustration only, actual configuration varies)

TCO a-Si

Amorphous Silicon

-1

µc-Si:H junction

100

4

-2 -1

TCO

5

a-Si:H junction

80 3

60 2

40

mc-Si

sputtered & etched

Microcrystalline Silicon

ZnO - lab type

AZO Ag

1

20

AM 1.5 global spectrum 0

0 0.3

Back Contact

0.4

0.5

0.6

0.7

0.8

Wavelength, microns

0.5 µm

High efficiency elements        43

Number of Sunlight Photons (m s micron ) E+19

Glass Substrate

Relative External Quantum Efficiency, %

SunFab™ 5.7m2 Thin Film Si Technology

aSi/uSi tandem junction Optimized TCO contact Laser pattern size/alignment Reflective back contact Advanced ARCs Light steering layers Triple junction structures EXTERNAL USE

0.9

1.0

1.1

1.2

67

µc-Si fraction (%)

67 66 64 65 66

66 65 65 66 68 67 66 68

2

Test results over 5.7m

68 68

High Efficiency TF Silicon Cells Triple Junction on Foil

Tandem Junction with Interlayer

Glass

Glass

TCO

TCO

a-Si:H

A-Si Top Cell

a-SiGe:H

Interlayer Thin film µm-Si Bottom Cell

nc-Si:H

Back Reflector

TCO Ag Stainless

15.1% initial efficiency

Interlayer optimizes light capture

13.3% stable efficiency

Initial cell efficiency of 15.0% achieved Source: B. Yan et. al., 2006 IEEE WCPEC, pp. 1477-1480

Source: S. Fukuda et.al., Eur. PVSEC-21, 2006

TF Silicon Has Paths to Higher Efficiency 44

EXTERNAL USE

Downstream Advantages Add to Module Value TF Panels Have Higher Energy Yield per MW Installed Typically 5-15% in summer

Large TF Panels Have Lower BOS for Utility Scale > 17%† equivalent to a minimum of and additional +2% efficiency

† Source:

45

2 top German installers

EXTERNAL USE

Building Integrated PV (BIPV)

(BIPV images courtesy of Schüco)

 Allows inclusion in low area rooftop applications  Serves dual purpose as construction material and energy generator  Larger 5.7m2 panel size is enabling – Large panes without gluing, avoids mismatch – Significantly reduces cost 46

EXTERNAL USE

PV Economics: Today and Forward Roadmap SunFab Thin Film New Technology

Levelized Cost of Electricity (LCOE) - $/KWh

14%

13% 12%

SunFab Thin Film Near Term Roadmap 11%

10%

Crystalline Si (2008) 8%

N.Carolina 1,491 KWh/KW

US Southwest

9% CoC Model

1,800 KWh/KW

$14/MMBTU

2% COC

x

$6/MMBTU

Large Scale Ground Mounted System with 30% US ITC

Installed Cost - $/Wp

Known Technology Learning Will Compete with Load Following Source: IHS/CERA, Applied Materials 47

EXTERNAL USE

Nanomanufacturing Opportunities In Energy

Energy Conservation

Energy Generation

Energy Storage

Technology to improve performance, form and cost

48

EXTERNAL USE

(Small)

Range of Energy Storage Markets Miniature Batteries (100mWh – 2Wh) Electric watches, calculators, implanted medical devices Batteries for Portable Equipment (2Wh – 100Wh) Flashlights, toys, power tools, portable radio and TV, mobile phones, camcorders, lap-top computers, memory refreshing, instruments, cordless devices, wireless peripherals

Physical Size

Transportable Batteries (Starting, Lighting & Ignition) (100Wh – 1,000Wh) Cars, trucks, buses, lawn mowers, wheel chairs, robots Large Vehicle Batteries (1kWh – 1,000kWh) Trucks, traction, locomotives, regenerative braking

(Large)

Regenerative Braking

UPS

(Low) 49

Stationary Batteries (0.25MWh – 5MWh) Emergency power, local energy storage, remote relay stations, communication base stations, uninterruptible power supplies (UPS).

Energy

EXTERNAL USE

Large Energy Storage (5MWh – 100MWh) Frequency regulation, Spinning reserve, peak shaving, load leveling

(High)

Batteries: Remaining Frontier in System Miniaturization

Sources: TagSense, IMEC, UCBWRC, MicroChip

Drive cost/mAh → minimize cost/mm2 & maximize mAh/mm2 50

EXTERNAL USE

HEV Battery Development Roadmap Improved battery Year 2010 Cost: ½ $1000 /kWh

Advanced Battery Year 2015 Cost: 1/7 $300 /kWh

Next generation battery Cost: 1/10? $200 /kWh Innovative battery Year 2030~ Cost: 1/40 $50 /kWh

Current cost $2000 /kWh

700 Wh/kg

• Source: Iwai Yamamoto, Mitsubishi Chemical Group,GIES Symposium 2008 51

EXTERNAL USE

Lithium Ion Cell: Manufacturing Tool Set Electrode Process

Cell Assembly

Final Assembly and Formation

Module and Pack Assembly

Slurry Mixing

Electrode Stacking

Metrology

Coating

Case Assembly

Cell Testing

Cell Interconnects and Electronics

Electrolyte Filling

Final Cell Assembly

Final Pack Assembly

Sealing and Lamination

Formation and Ageing

Annealing

Calendaring

Final Test And Sorting

Slitting

3D Electrode

3D CNT Electrode

(Sources: Applied Materials, MIT)

Le(1-x)FePO4 52

EXTERNAL USE

Related Opportunities for Semiconductors

53

EXTERNAL USE

Summary and Conclusions  Nanomanufacturing technology is already the foundation of several large markets – More than just thin/small features – Cost/fn is a common factor across virtually all commercial applications

 Challenges in energy represent great technical, business and societal opportunities – Nanomanufacturing technologies can enable market-making cost & performance

 Promising opportunities exist across a number of applications – Glass, LED, PV, Batteries

54

EXTERNAL USE

55

EXTERNAL USE