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Answer all questions (PART A-2*10=20 marks) 1.What is meant by zener breakdown? 2.What is intrinsic semiconductor? Give two examples. 3.What are the biasing conditions to operate a transistor in active region? 4.What is thermal runaway? 5.List the merits and demerits of negative feedback. 6.Write the Barkhausen criterion condition for oscillator. 7.Draw the VI characteristics of DIAC. 8.What is an opto-isolator. 9..Mention the ideal characteristics of op-amp. 10.What is meant by precision rectifier? PART B (16*5=80 marks) 11.(a).Discuss the VI characteristics of P-N diode and zener Diode with their construction and principle of operation. Or (b).(i).Explain the operation of full wave rectifier with necessary wave forms. (ii).With suitable circuit diagram, explain the operation of positive clipper, negative clipper, positive clamper and negative clamper. 12.(a).Discuss the VI characteristics of any two types of MOSFET. Or (b).Determine the operating points of the following circuit. Also find the stability factor if ß value of the silicon transistor is 50. 13.(a).Design a negative feed back amplifier with a feed back factor of 10%. Also find the number of stages required to get a gain of 100 with feed back. Assume the non feed back amplifier has a gain of 1000. Or (b).Write short notes on the following: (i).Colpitts oscillator. (ii).Bistable multivibrator 14.(a).Explain the VI characteristics of SCR and TRIAC.

Or (b).Discuss the operation of LCD and solar cell in detail. 15.(a).With operational amplifier, explain the operation of Wein bridge oscillator and low pass filter. Or (b).Explain the applications of op-amp with respect to the following: (i).Non inverting amplifier (ii).Integrator (iii).Differentiator