Silikon Germanium.docx

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Karakteristik Forward-Reverse Dioda Silikon 800 600

I (MA)

400 200 0 -70

-60

-50

-40

-30

-20

-10

0

10

20

-200 -400

-600 V (VOLT)

Karakeristik Forward-Reverse Dioda Germanium 150 100 50 0 -60

-40

-20

I (MA)

-80

-50 -100 -150 -200 -250 -300

V (VOLT)

0

20

40

60

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