Reliability Prediction Of Electronic Equipment

MIL-HDBK-217F

BEF?1991 SUPERSEDING

MIL-HDBK-217E, 2 J8nwry 1990

MILITARY

NotIce 1

HANDBOOK .

RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT

AMSC N/A DISTRIBUTION

STATEMENT

A: Approved for public release; distribution unlimited.

MIL-HDBK-217F

DEPARTMENT OF DEFENSE WASHINGTON DC 20301

RELIABILllY

PREDICTION

OF ELECTRONIC

EQUIPMENT

1. This standardization handbook was developed by the Department of Deferw federal agencies, and industry. with the assistance of the military dep~ments, 2. Every effort has been made to reflect the latest information on reliability prediction procedures. It is the intent to review this handbook periodically to ensure its completeness and currency. 3. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this dooument should be addressed to: Commander, Rome Laboratory, AFSC, AlTN: ERSS, Griffiss Ak Force Base, New York 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

....—

I

.

MIL-I+DBK-217F

CONTENTS SECTION 1.1 1.2 1.3

1: SCOPE Purpose .... .. .... ..... .. .. ... ... ....0...... .... .... .... . .... ....... ........ .. . ...... . .. .. .... .... ... ..... .. ... .... .... Application .. ...... ...... .... ...*.. ......... .... .... ...... . ,, *........ ..........*. .....*...... .... ........ ..... .. ...... @rnputefized RdiabWty Predktbn .. .... .. .... ...... .. ....... .. .... .. .. .... .. .. ...... ... .. .... ..... ... .....

SECTION

2:

... ... ....... .... .. ................... .. .. ... ... ... .... ... .... ... .....

2“1

SECTION 3.1 3.2 3.3 3.4

3: INTRODUCTION Reliability Engineering . ........ .. The Role of Reliability Predktbn ...**.*.*..... ......... ................ ......... ................. ............. Limitations of Reliability Predictions ..... *..*.*... Part Stress Analysis Prediction ..... ........ ........ ...... . .. .... .. ..... ...... ... ... . ...0.. .... ... ... .... ....0

3-1 3-1 3-2 3-2

SEHION

4:

SECTION

5: MICROCIRCUJTS, INTRODUCTION .......**...**.....................0..... ................. C3ate/Lo@cArrays and Microprocessors ...... ..................................*... .....*..... .............

●

●

●

REFERENCE

DOCUMENTS

.

.

. .

.

●

. . .

. . . .

.

.

. .

. .

...0

. .

.

●

. . . .

. .

. . .

. .

. .

.

. . . . .

.

. .

. .

. .

.

. . .

. .

. .

.

. . . . . . . . . . . . .

. .

.

. .

. . .

. .

. .

. ● .

. .

. .

. . . .

.

. .

. .

.

.

. .

. .

. .

. .

. . . . .

.

. .

. .

. .

.

. . . . . .

.

. .

. .

. . . .

.

●

RELIABILIN

ANALYSIS

EVALUATION

.....................*..*... ....................... ●

1“1 1-1 1-1

4-1 5-1 5-3 5-4 5-7 5-8 5-9 5-10 5-11 5-13

5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8

Memorfes ... ..... .... .... .... .... ...... .. . ...... .... .. .. .... ........ ...... ... .......... .... .. .... .... .. ..... .. .. ........ VHSICNHSIC Like ... ........ ....... ........... ... ...... ........ .... ....... ....... .... .................... .......... GaAs MMIC and D@ai Devioes . ........ .... .............. ... ...... ........ ..... ... ..... .. .... .. .... .. .. ....... Hybrids . .. .. ............ .... ...... .... ... ...... .. ........ ........ .... ....... .......... .... ...... ........ ... .. .. ... ... .... SAW Devices .... .......... .. .... .... .. ...... ... .... .... ..... . ... .... ...... ... .... .. ...... .... .. .. ... ...... .......... Magnetic Bubble Memories ........ ............ .... .. ... .... .......... .... ...... ... .. ... ..... .. ...... .. .. .. ..... XT Table for All .......... ............ ...... ...... ............ ...... ................... ........ ...... ............ .......

5.9

C2 Table for AIl . ....... .... .... ........ .... ....... .. ...... .. .... .............. ... .. .... ... ..... .. .......... ...........

5-14

5.10

5-15

5.11

%EsXL and fiQ Tabk= for ~i ..... ........ .... .... .... ... .. .. ........ ...... ... ....... ....... ........ .. .. ...... ... TJ Determination, (All Except Hybrids) ...................................*... ............* ..................

5.12

TJ Determination,

(For Hybriis) ........... ......... ........................................... ....... .........

5-18

5.13

Examples .... ........ ........ .. .. ................... .. ........ .... .. .... ..... .... .......... ...... .... .... ... ...... .... ..

5-20

6: DISCRETE SEMICONDUCTORS Discrete Semiconductors, Introduction ....... ........... ....... ......... .... .. ... ..... .. ... .... ... ..... ... Diodes, Low F~ency ..... ........ .... .. .......... . .. .. ........ ...... ....... High Frequency (Microwave, RF) .... .......... .... .. ........ ..... ........ .... ....... .. ..... ...... Transistors, LOW Frequency, Bifx)lar ... .... .... ....... ... .... ..... .... ...... .... .. .... ..... ........ ... ... ... Transistor, Low Frequency, Si FET ..... ............... ............................................... ...*.. Transistors, Unijmction ..........00....................... .............. ....... ........ .......... ........... ... ... Transistors, Low Noise, High Frequency, Bipolar . ..... ..... .... ...... ... ... ... .... .. ..... .. .. ........ . Transistors, High Power, High Frequency, Bipolar .....................* ..........* .............. ... ... Transistors, High Frequency, GaAs FET .. .. ..... .............0.... .. .... .... ... ... .... ....... .. ........... Transistors, Hgh Frequency, Si FET ....... ....* ... .. ..... ... ... ...... .... ...... .. .... . .... ...... .... .... ... ~ end SCRS . ... .... ........ ........ .... .. ........... .... ...... ........ . ... .. .... .. .... .. .... ...... .. . .... Optoelectronics, Detectors, Isolators, Emitters ........ ........ .. ... .. .......... .. .... .... ... .. .... ..... Optoeiectmnios, Alphanumeric Displays ... .... .. .... ................. .. .... ...... .... ... .... ... ..... .. ... OploekWonios, Laser Diode ................. ......* ...... .. ............ .... .... ... ...... .. ..*...... . .... ... .. TJ Determination ..... .. .... .... .... ............ ... .... .... ...... .. ...... .. .... ..... .... ...... .... .... ..... .. .... ....

6-1 6-2 6-4 6-6 6-8 6-9 6-10 6-12 6-14 6-16 6-17 6-19 6-20 6-21 6-23

Example . ..... .... .. ........ ... .... ......... ............... .... ...... .. .................... .. .... ....... .. .... .. .........

6-25

SECTION 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 6.14 6.15

●

●

.

. . .

.

. .

.

. .

.

.

. .

. .

.

.

. .

. .

. .

. .

.

. .

.

. .

.

. .

Dbdes,

●

5-17

...

HI

MIL-HDBK-217F —

CONTENTS SECTION

7: TUBES All Types Except TM/T and Magnetron ........ ....................................................... ....... Traveli~ Wave . ....... .... ...... .... ........... ...... .. ...... .. ........ .... ......... .............. .. ...... ........... Magnetron .. .. .......... .... .... .. ........ ... .......... .. .... ...*..... ...... .......... .. .... .......... ..... .........0..

7-1 7-3 7-4

SECTION 8.0 8.1 8.2 8.3 8.4

LASERS 0: Introduction ... .................... ..... .... .. .... ...... .. ...... .... ......... .......... .. .. ............. .... ...... .. .... Helium and Argon . .......... ... .......... .... ..... .... ... ..... .. ...........** . ... .... .... .... .... ...............* . .. Catin Dmxide, Sealed . .... .. ............ .. ....... ... ... .... ...... .. ...... .. .. ... ........ ...... .. ...... ....... .. Carbon Dioxide, Fbwing .... .. ...... .... ........ .... ... .... .. .... ...... .... ....... ........ ...... ........ ......... SoIii State, ND:YAG and Ruby Rod .... .... .... .... ... ............ .. ............ .. .. .. ..... .... ...... .... ...

8-1 8-2 8-3 8-4 8-5

SECTION 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 9.10 9.11 9.12 9.13 9.14 9.15 9.16 9.17

RESISTORS 9: Introduction .... ... ... ....... ............ ... .. ........ .... ... ... ................... .. .. ........ .... ......... ...... .. .. .. Fixed, Composition (RCR, RC) ................................. ............................... ................. I%@, Fitm (RLR, RL, RN (R.C, or N). RN) . ............................ . ....... .... .................... .... Fixed, Fltrn, Power (fWI) ........ ........ ...... ........ ... .. .. .......... .. ................... ............ ........... Network, Fixed, Film (RZ) .. ........... ............. ............. .............. .................... ................ Fixed, Wirewound (RBR, RB) ... ......... ................... ............................ .................. ...... Fixed, Wkewound, Power (RWR, RW) ......... ...... .... .. .... ... .......... .. ........ .. ........... ...... ... Fixed, Wirewound, Power, Chassis Mounted (RER, RE) ............................................ Thermistor (RTH) .......... ..... ........ .... ..... .... ...... .. .. .... .... ..... .... .... ........ .. ............ ... .. .. .... Variable, Wirewound (RTR, RT) ......... ................................................................. ...... Variable, Wkewound, Precision (RR) ......... ....... ... ....... .......... .... .... ..... ................. ...... Variable, W/rewound, Semiprecision (RA, RK) . .... ................ ....... ................... ..... ..... . Variable, Wkewound, Power (RP) . .......... .. ...... .. .. ..... .......... .... .... ....... .... ........ ..... ...... Variable, Nonwirewund (RJ, RJR) ................................ ........................................... Variable, Composttlon (RV) ...................*.. ........ ................................ ...... .. ................ Variabte, NOnwmwu nd, Fitmw’KI Prectsion (RQ, RVC) ... .... ........ ....... .. .... ................ Cakulation of Stress Rat& for Potent&meters . .... ........ .... .... ..... .... .... .. .. .... ..... ........ ... Example . .. ..... .. ...... ....... ...... .... ..... ...... .... ... .. .. ............. .... .... ... .... .. ................... .........

9-1 9-2 9-3 9-5 9-6 9-7 9-8 9-1o 9-12 9“13 9-15 9-17 9-19 9-21 9-23 9-25 9-27 9-29

SECTION

10: CAPACITORS Fixed, Paper, By-Pass (CP, CA) .. .... .... ...... ...... .. .. ... .... .... .......... ....... .............. ........ ... Fixed, Feed-Through (CZR, CZ) . ........ ...... ........ .. ....... ...... .... .... ......... .. ...... .... .... .... ... Fixed, Paper and Plastic Fitrn (CPV, CQR and CQ) ..................................................... Fixed, Metallized Pqw, Paper-Plastic and Plastic (CH, CAR) .. ...... .. .... ... ............... .... . F&ed, Plastic and Metallized Plastic .............................................. ............................ Fixed, Super-Metallized Plastic (CRH) ........ ....... ..................... .... ........ ....... ...... .... ..... F&ed, MICA (CM, CMR) ........ .. .. .... .............. ... .. .. .. .. ...... ........ ............. ...... .. ...... .... ..... Fixed, MICA, Button (CB) ..... .. ....* . .... .......... .. ... .... .... .... .......... ..... .. ..... ..... .... .... .... .. ... Fued, GJass (CY, CYR) ......... ........ ............. ....... ... ...... ............ ..... .. .. .... .... .. .. .... .... ..... Fixed, Ceramic, General Purpose (CK, CKR) ............................................................. . and Chip (CCR and CC, CDR) . ...... ........ . Fixed, Cerarnk, Tenpemtum ~ Fixed, Electrolytic, Tantalum, Solid (CSR) ........ .... .... .... .... ............. .... ....... .. .. ........ .. ... Fixed, Electrolytic, Tantalum, Non-Solid (CL, CLR) ... .... .... .... ..... ........ ... ......... ..... .... ... Fbd, Ektrotytic, Aluminum (CUR and CU) .... .. ...... .... .. .... ... .... .... .. .. .. .. ..... .... ...... .... . Fixed, Electrolytic (Dfy), Aluminum (CE) ...................................... .............................. Variable, Ceramic (CV) .. .......... ............ ............. ........................ ................................ Variable, Pkton Type (PC) ........ ......... ......... ......... ......... ................... ........................ Varitie. ArTfimmr (C~ ............. ...... ........ .. ........... ...... ...... ....... ... ..... .... ........ ...... ... Variable and Rxd. Gasor V.um(CG) .. .... .. ..... ......... ... ...... ........ .... ... .... ......... ...... .. Example ... ..... ........ .. ............ ... ........... .. .. ..... .... .. ..... .... .... ........... .... ..... .... ........ ..... .. ..

1o-1 10-3 10-5 10-7 10-9 10-11 10-12 10-14 10-16 10-18 10-20 10-21 10-22 10-24 10-26 10-27 10-28 10-29 10-30 10-32

7.1 7.2 7.3

10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 10.10 10.11 10.12 10.13 10.14 10.15 10.16 10.17 10.18 10.19 10.20

iv

——

MIL-HDBK-217F

CONTENTS SECTION 11.1 11.2 11.3

DEVICES INDUCTIVE 11: Transformers ........... .... .... .......... .. .... ..... .... .... ... ... ...... .... ....... .... .. .. .... ...... .. ..... .... .... .. cob .... .....*.. .............................................................................*...... ..................... Determination of Hot Spot Temperature ............................................................0...0..

11-1 11-3 11-5

SECTION

ROTATING DEVICES 12: Motors . . .... ........ .... .....* .. ........ .. .......... ......... .... ...... .. .. .... .............. ..... ........ ............. Synchros and Resolvers .............. .... ........ ..... .. ...... .... .... ........... ... ....... .. ............ ... .... EIapsed Time Meters . .. .. .... ............*.. .. ........ .... ... ..... .... .... ............ ....... .. .. .... ........ ... .. Example ... ...... .. ... .. .. ..... ........ ......... ........... .. .... .. ..... .... ........... ...... .. .. ... .. .......... ..... ....

12-1 12-3 124 12-5

RELAYS 13: Mechanbl ......................................0.. ......................... ...................................0..... Solid State and Time Delay

13-3

12.1 12.2 12.3 12.4

●

I

I

SECTION 13.1 13.2

●

.

. .

. . .

.

. .

. .

. .

. .

. .

.

.

●

. .

. .

.

.

. .

.

. .

.

.

...*.....

.

. .

. .

. .

.

.

.

.

.

. . .

.

. .

.

. . .

.

.

. .

.

.

. .

.

.

.

.

. .

..0......

13-1

(

I

SECTION

14:

SWITCHES

Toggle or Pushbutton ............ ..... ...... ...... ........ .... .............. .......... .. ... ... ............ ........ Basic sensitive .. .... ...... .. .. .......... .. .. ... ...... .... .. .... ...... .... .... ....... ............ ........ .. .. ... .... .. Rotary .. ... .......... ...... ... .... ...... .. .......... .... ...... ... ...... .. .... ........ .... .... .. ..... ....... ... .... .... ... Thumbwheel ... .. ....... ....... ...... ....... .... ........ .... ........ .. .... ........... ...... ...... ....... ... ..... .... .. Circuit Breakers . ........ ........ .... .... ...... ........... .... .. ... ....... .... ....... .... .. .. .... .... ........ ..... ....

14-1 14-2 14-3 14-4 14-5

SECTION 15.1 15.2 15.3

15: CONNECTORS General (Except Printed Cir@t Board) .......... .... .... ...... ... .. ...... .... ... ..... ... .... .... .... ....... Printed Circuit Board . ... ........ .... .... ...... .... ... .... .... .. .. .. .. ........... ...... .. ...... ...... .. .. ....... .... Integrated CituJlt Sockets .. ...... .......... ...... .. ... .......... .... .... .. ...... ... .. .. .............. .... .... ...

15-1 15-4 15-6

SECTION 16.1

lNTERCONNECTtON ASSEMBLIES 16: lntemomectkm Assenb+ies with Ptated Through t-totes . .. ....... ....... ... .... .... ........ ....... .

16-1

SECTION 17.1

17: CONNECTIONS Connections ..........................................................................................................

17-1

SECTION 18.1

METERS 18: Meters, Panel .... ...... .. .... .. .. ................... .... ...... .... ...... .... ... .... ........ ........ .... .... ... .... ....

18-1

SECTION 19.1

19:

QUARTZ CRYSTALS Quartz Crystals.......................................................................................................

19-1

SECTION 20.1

20: hmp

LAMPS .. ... .. .. .... ...... .... . ...... ...... .... ........ .. .... .. ....... ... ... .... .... .... .... .. .. . .. .... ........ .. .. .......

20-1

SECTION

ELECTRONIC FILTERS 21: Eiectmrtb Fitters, NorwTunabte................................................................................

21-1

SECTION 22.1

FUSES 22: Fuses . . . ....0.... .. .. ....... ........ .... .......... .... ............ ... .. .... .. .. .... .... ....... .. ..... ... .. .. .. .........

22-1

SECTION 23.1

23: MISCELLANEOUS PARTS Miscellaneous Patis ....... ..... ......... .. .... ... .... .... .... .......... ....... .... ........ .. .... ........ .. ....... ..

23-1

14.1 34.2 14.3 14.4 14.5

21.1

●

APPENDIX

A:

PARTS

COUNT

APPENDIX

B:

VHSIC/VtiSIC-LIKE

APPENDIX

C:

BIBLIOGRAPHY

RELIABILITY AND

VLSI

PREDICTION CMOS

. ...... .... .. ..... . ..... . .. .. .. .. ... ... .. .

(DETAILED

MODEL)

A-1

... .. .. ... ... .

B-1

. ......... .... .......... .... ... ...... .... .... .. .... ....... ...... ........ ............ ... ..

c-1

v

MIL-HDBK-217F

—

CONTENTS

LIST OF TABLES Table Table Table Table Table

3-1: 3-2: 4-1: &l: S2:

Parts with Multi-Level Quality Spedfications .............................. .......................... Environmental Symbol and Desdptiin .............................................................. Reliability Analysis Cbckfist ...... ............... ... .. .......... .... ........ ..... ........ .. .......... .... Default Case Temperatures for All Environments (~) ..... .. .... ....... ................. ....... Approximate Thermal Resistance for SernbncWtor Devices in Various Package Sizes ..... .... ..... ............. .... ........ .... ........ ... ............ .... ...... ... .

3-3 3-4 . 6:2; 6-24

LIST OF FIGURES Figure 5-1: Figure 8-1: Figure 9-1:

vi

Cross Sectbnal Vk!w of a Hybrid with a Single Multi-Layered Substmte ......... ... .. .. Examples of Active O@cal Surfaces ....... ........ ...... ... .... .... ... ..... .. ............. .... .... ... MIL-R-39008 Deratinfj cum ... .. ............. ........................... ... ................. ... .. ... .. .

5-18 8-1 9-1

MIL-HDBK-217F

FOREWORD This revision to MIL-HDBK-217 provides the following changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C): 1.

New failure rate prediction microcircuits: MonoliihE B~lar

●

models are prov-kled for the following nine major classes of

Dqital and Linear Gate/lm@c Array Devioes

Monolithic MOS Digital and Lmar

●

Gate/Logic Amy Devfces

●

Monolithic B@olar and MOS Digital Microprocessor Devkes (Including Controllers)

●

Monolithic Blpotar and MOS Memory Devices

●

Monolithk (W@

●

Monolithic GaAs MMIC Devices

●

Hybrid Microcircuits

●

Magnetic Bubble Memories

Di@tal Devices

Surface Acoustic Wave Devices

●

This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to 60,000,

linear microcircuits with up to 3000 transistors, bipolar and MOS digital microprocessor and co-

processor

up to 32 bits, memory devices with up to 1 nlftion bits, GaAs monolithic microwave integrated

circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 transistors. Cl factors have been extensively revised to reflect new technology devices with improved the activation energies representing the temperature MOS devices and for memories.

The

reliability,and

sensitivity of the dice (nT) have been changed for

The C2 factor remains unchanged fmm the previous Handbook version,

but includes pin grfd arrays and surface mount packages using the same model as hermetic, solder-sealed dual in-line packages.

New values have been included for the quality factor (~),

and the environmental

factor (@.

use, to delete the terrperature

the learning factor (~),

The rrwfel for hybrid microcircuits has been revised to be simpler to

dependence

provide a method of oakulating ohp jundon

of the seal and interconnect failure rate contributions, and to temperatures.

2.

A new model for Very High Speed Integrated Circuits (V1-fSIC/VHSIC Scale Integration (VLSI) devices (gate counts above 60,000).

Like) and Very Large

3.

The reformatting of the entire handbook to make H easier to use.

4.

A reduction in the number of environmental fado~

5.

A revised failure rate model for Network Resistors.

6.

Revised models for Ms and Ktystrons based on data supplied by the Electronic Industries Association Microwave Tube DiWon.

(~E) from 27 to 14.

vii

-- . ...=--------

- —----

--u.

I --

1

-u

I

MIL-HDBK-217F

1.0

Purpoee

- The purpose of thfs MruboOk

SCOPE

is to establish and maintain consistent and uniform

for estimating the hhemnt rek&Slity (i.e., the reUabflityof a mature design) of rnilbry @edron& predictionsckhg aoquis&bn progmms ~~~ systems. It provides a common basfs for ~ for military ebctrcmc systems and equipment. h atso establishes a common basis for oomparfng and evafuatlng reliability predictions of rdated or competitive destgns. The handbook is intended to be used as a tool to increase the reliabil”~ of the equ@merx being designed. ti.~

1.2 Appllcatlon - This handtmok oontains two methods of reMWiJity pmdiotbn - “Part Stress Analysis” In Sectfons 5 through 23 amf 7%rts Count- in Appendix IL These methods vary in degree of informatbn needed to apply them. lhe Part Stress Anafysii Method recpires a greater amount of detailed In&mtfon and ts appfkabfe mrfng the later design phase when actual hardware and c&wits are being designed. The Parts Count Method raquires less infonnatbn, generally part quantities, qmtity level, and the applkatbn environmen& This method Is appfioable cMng the early de@ase and du~ pmpo@

formulation. In general, the Parts Count Metfwd wffl usually result in a more conservative estknate (i.e., ~f*mte)ofsy’stem r@taMtythanthe Parts Stress Method. 1.3 Computerfzad Rellablllty PmcffctlOn - Rome Laborato~ - ORACLE is a computer program Based on developed to aid in appfying the part stress analysis procedure of MIL-HDBK-217. environmental use chamcteristks, piece part oount, thermal and electrical stresses, subsystem repair rates and system configuration, the program calculates piece part, assemMy and subassembly failure rates. It also flags overstressed parts, afbws the user to perform tradeoff analyses and provides system meantime-to-failure and availability. The ORACLE computer program software (available in both VAX and IBM co~atible PC versbns) is available at replacement tape/disc cost to all DoD organizations, and to contractors for applbcatbn on spedfk DoD contraots as government furnished property (GFP). A statement of terms and conditions may be obtained upon written request to: Rome Laborato~/ERSR, Grtffiss AFB, NY 13441-5700.

f-l

I

..

,.. -, ..-”,

.-

MIL-tiDBK-217F

2.0

REFE!?ENCE

DOCUMENTS

~s~cites somespecificatbns which have beencanoslle dofwhiohdescrb ectevicesthatam nottobeused fornewdes@n. lWiinfomatti&s Wms$arytmcxames omeofthesed evicasarusecfin soalfed %ff-th~ eqdpment which the Depwtment of Defense purchases. The documents cited m this section are for @dance and information. SPECIFICATION MIL-C-5

SECTION #

10.7

MIL%l 1

9.1

MlL-R-l 9

9.11

MIL-G20

10.11

FMed,Mii-Dieisctric, General Specifii

Ca@&s, ~,

F&a

for

for

composition (Insufated) General $pecuii

Resiekx. Variab&gWirewound (Low Operating Tmpwatum) General Spo&@atbn for ~) @Pw@%=d~ ~“ v@fw=Estdfkhed and Nonestabiished Reliability, General Specifiiion

for

MIL-R-22

9.12

Rask!or, Wuewow

MIL-C-25

10.1

~. fiti p~r~~~ Dire Cwrent (Hermetically Sealed in Metal Case@, General Specification for

MIL-R-26

9.6

MIL-T-27

11.1

ML-(X2

10.15

Resistor, Fued, Wkewound (Power Type), Genarai Specifhbn

10.16

for

Tmnsfonner and fndwtor (Audio, Power, High Power, High Power Pulse). General Sfxdiibn for

~r.

Pdar&ed),

MIL-G81

Power Type, General Spa&cation for

Fiu~ ~fo~~ (DG fgruminum.W Gened spadkamn

E~@,

Capacitor, Variable, Ceramic Dielectric (Trimmer). General Specification

for

MIL-92

10.18

MIL-R-93

9.5

MIL-R-94

9.14

Resistor, Variable, Composition, General Specifiin

MIL-V-9S

23.1

Vior,

W-L-1 11

20.1

-.

W=

14.5

Ckauit Br@der, MOidOdC&m, BrarmflcfrcuRand~

W-F-1726

22.1

Fuse, Q@ridge, CJassH (Thii mvem renewable and mrwnebie)

w-f-i814

22.1

Fuse, Camidge, High Interrupting Cqmcity

MfL-G3098

19.1

_

MIL-G3807

15.1

MIL-G3643

15.1

Resistor, Fwed, Wkewound (Aocura!e), General Spdfkdon

MlL4N8so

Luw

u

I

15.1

for

for

for

Interrupter and Self -RectifyingO General Specification for Miniature, Tungaran Fikment

hadaant

Unk ~

~~end Spcifiw&m for

Connector,Coax&~Radii Frequency, Series Pulse, Gene@

, SpdMlOns

for

Connector, Coaxial, Radio Frequency, Series NH, Associated Ftiings, ~neral

I

Variable, Air Dielectric (Trimmer), General Specificaii

Ctpcitor,

s~

for

Connector, Coaxial, Radio Frequency, Series LC

MIL-HDBK-217F . 2.0

REFERENCE

SECTION #

SPECFKATJON .

DOCUMENTS

Mt4X655

15.1

conneotor, P&q and Ramptda, _(Jl=SeriasTwin)and Associated Fitlmgs, General SpuM@mn .

ML-C-3767

15.1

~. SpacMiion

MIL-S-3786

14.3

S*. ~bn

Rotary (Circxit Selector, Low-Current (Capady)), for

MfL-G3950

14.1

=.

Toggle, Envlmnmantally sealed, General

MIL-G3965

10.13

f’q ~ for

~

(po”~*

Elti~

=b~~~

(No-lkf

B&~

TYP@ -~~

General

Speckatbn

for

Electrolyte), Tantalum, General

MIL+5015

15.1

~, Eledrkal, Spedflcation for

MIL-F-5372

22.1

I%aa, Currati Limiter Type, Amaft

MIL-R-5757

13.1

Relay. Electrbl (For Electronic and Communkation General Specifbaticm for

MIL-R-6106

13.1

Circular Threaded, AN Type, General

Type Equipment),

Relay, Electromagnetic (Including Established Reliability(ER) Typs),

~-~s~ bnp,

for Incandemt,

Aviation Service, General Raquirament for

MIL-L-6363

20.1

MIL-S-8805

14.1, 14.2

SwhcheS and Switch Assemblies, Swxdtivo and Push, (SW for General Sfx@in

MIL-S-8834

14.1

Switches, Toggle, Positive Brealq General Specification for

MlL-M-l 0304

18.1

Meter, Electkal Indicating, Panel Type, Ruggedzed, Spedficatbn for

MlL-R-l 0509

9.2

MIL-C-1095O

10.8

General

for

Resistor, f%cad IWm (High Stability). General Speoikatbn

-Or,

Fud,

Mii

Action)

Dielectric, Button Style, General Specifiiion

for

MIL-C-1101S M!L-GI

10.10

~, ~bn

FU~, Ceramic Dtiric for

(General Pupae),

Fixed, Glass Dlelectrb, General Spcfkatbn

Ganeral

1272

10.9

Capadtor,

MlL-C-l 1693

10.2

Capadtor, Feed Through. Radio Interference Reduction AC . Sdedh Metal Casos)Eatabkhed and No~ for MaMfiio General Spdicatbn l!!’!!’

MlL-R-l 1804

9.3

MIL-G12889

10.1

MIL-R-12934

9.10

Resistor, Freed, Film (Power Type), General Specifiin

for

-

andDC, “ hed

for

“Cap&or, By-Pa&: Radio - Interfermce Reduction, Paper Dielectdc, AC d DC, (Hermetbally Sealed in Metallk Casas), Ganeral Spectficatbn for Resistor, Variable, Wirewound, Preasion, General Specification for

2-2

r- . . .

–n

/

nv

-1

[1-/!1

, ---

--–

.uu

l--

,-- --------

—.

n

. ——.

ba

-

MIL-HDBK-217F

2.0

sPEcfFlcATloN

ML-C-141S7

REFERENCE

DOCUMENTS

SECTKMJ #

10s

~, -d: a (papcurrent (Hermabd lySeabdin @J-~ ~n

for

PI-tic) or mastic Dweot* Direct Refkwty, Matal Cases) amMshed

MIL-G14409

10.17

~. vSpac#ioatbn for

MIL-F-15160

22.1

Fuse, Instmnem

MK-C-IS305

11.2

Coil, Fixed and Vari*,

MfL-F-15733

21.1

FBtler,Rack

UL-GW312

10.4

~. Dbbdrk, ~ibn

ML-F-13327

21.1

Pass, Band Pass, Band Suppression and Dual Filter, High Pass, k Funcknkg, General Specdfiition for

MIL-R-16546

9.7

6.0

TyP, T“lar

Trimmer), GWWraI

Poww amf Telephone Radio Frequency, General Specifiibn

Imarkmrux,

General SpecMin

for

for

-, Metzdl&ed (Paper, Paper Plastic or Plastic Film) Dkocl Cummt (Herrneticaliy sealed in Metal Cases), Gemral for

Redstor, Freed, WWewound(Power Type, Chassis Mounted), General Specificatbn

MIN-19500

(Pii

for

SomkOnductor Oevice, Geneml Specification for

MIL-R-19523

13.1

Relay, Contmi, Naval Ship&oard

ML-R-19M8

13.1

Roley, Tree, Delay, lherm~

ML-C-19978

10.3

~or, Fmecf Plastic (or Paper-Plastic) Dielectric (Hermetically Sealed m Metal, Cemmc or Glass Cases), EstafXished and Noneatabiiahed ReGabilii, General Specifiicatbn for

MIL-T-21036

11.1

Transformer, Pulse, Low Power, General Specikatiin

MUA-21097

15.2

General Specifiition

for

for

Connector, Electrical, Printed WInng Board, General Purpose, General

Spedfbatbn for MIL-FM2097

9.13

Rasistor, VarMMe, Nonwirewound (AdjustmentTypes), General

Spedfbatbn for MIL-R-Z?664

9.2

MIL-S-2271O

14.4

S*. -nerd

ML-S-22665

14.1

Switches, Pushbutton, Illuminated, General Specification for

MIL-C-22W2

1s.1

Connector, Cyfinddcal, Heavy Outy, General Specification for

ML+163

10.19

Resistor, F&d,

=

Mary ~*

~~

Film, lnsdated,

General Specifiiion

(Printed Circuit), (Tlwmbwheel.

ofi,v*.

M&GZ3269

10.9

em. Fi~. GSpeclkatbn for

MIL-FW3265

9.1s

Reaiir,

V=xum

Diekrik

MI-*

Estiiiihed

for

In-1ine and Pushbutton),

General Specifiibn

Reliabllky, General

Variable, Nonwirewound, General Specificationfor

2-3

..

MIL-HDBK-217F

2.0

REFERENCE

SPECfFICATlON

DOCUMENTS

sEcTKm

MIL-F-23419

22.1

MIL-T-23648

9.8

MfL-G24308

15.1

# Fuse, bstrumont

Type, Gonad

~km

for

Thormistw, (Tharmafly Sensitive Resistor), Insulated, Generaf Spadfioatbn for Connec40r, EPanel. Genoraf

Rectangular, Miniature Polatizad Shell, Rack and

Spodcatbn for

MIL-G25516

15.1

Cortnector, ~ -~~fof

MfL&+6482

15.1

Cormoctor, Efoctr&f (Circular. Minirdure, QuH kamnoc& Environment Rl&ting) ReU@ac& and Plugs, General Spocik@ion for

MN-R-27208

9.9

Resistor, VariaM, Speciftiion for

, Miniature, ~

Environment Resistant Type.

WKewound, (Lead Screw Actiied)

General

MIL-C-2f1748

15.1

Con-or, Ebct~ Rectangular, Ra& and Panel, solder Type and Crimp Type Contads, General Spacifiition for

MIL-R-28750

13.2

Relay, Solid State, Ganeral Specification for

MfL-G288tM

15.1

Connector. E&ctric Rectangular, High Density, PoMzed Cantral Ja&euww, Genoraf Spedficstion for, Inactive for New Designs

MIL-C-2884O

15.1

Conrmdor, ~ cimUlar Threaded, High Denaity, High Shock Shipboard, Class D, General Spechation for

MIL-hR851 O

5.0

M&oc5rcuits, Generaf Specificatii

MIL-H-38S34

5.0

Hybrid Microcircuits, General Specification for

MIL-I-38535

5.0

Integrated Circuits (Microcircuits) Manufacturing, General Speclfiiion for

MIL-C-38999

15.1

Qxvwc#or, E~ Chcular, Miniature, Hgh Density, Quick Disconnect, (Bayonet, Threadad, and Breech Coupiing) Environment Resistant Remowble Crimp and Hermetic Solder Cmtacts, General Specifiiion for

MfL-C-39001

10.7

qor. ~~, Mh Specification for

MIL-R-39002

9.11

Raa&stor, Variable, Wkewound, Sem&Precision, General Spa&icstion for

MfL—G39003

MIL-R~

10.12

-’

‘a_~&*ewg

9.5

Raslatcx, Fixed, ~nd, Specification for ‘

MtL+39006

10.13

-N. ~~. -I& EstalMshed Relilii,

MfL-Raoo7

9.6

Resistor, Fixed, W~ General Speckition

Dkktk

for

Estabkhed ReliaMfity, Generat

T-lJm*

●

(Aaamte)

EstaMshed

Fteflabllity, General

(NortsoMf Ek%rolyte) Tantalum for General SpadkMon nd (Power Type) EstaMished Reliability. .

for

-

“- -

..

.-. .

.

..

..

MIL-HDBK-217F

2.0

SPEOFICATR3N MIL-R~

REFERENCE

DOCUMENTS

SECTION # 9.1

Redstor, Fixed, Campoah“ n, (Insutated) Established Reliability, Genefal S@fio@hfor

9.7

R@!sMcw,m ~nd (Power Type, chassis Mounted) EstaMished R@aMfity, General SpecMcMion for

MLC-3901O

11.2

Cd, Fbrti Spec#iibn

MIL-CX9012

15.1

Connector, Coaxial, Racfb Frequency, General Spdfii”~

UL-C39014

10.10

MK-C49015

9.9

MIL-R39016

13.1

Radio Frequency, Molded. Established Ratiiity, for

~

General

for

~. ~ Carandc Dielectric (General purpose) EsMMbhd R8iiabili!y, Gmeral SpeoWation for WkewOund (Lead screw Actuated) Emabfished Rdetor, V*, Reliability, General Spdfkatbn for Relay, Electromagnetic, Established ReIiabilii,

General Specifiition

for MtL-R-39017

9.2

Resietor, Freed, Fh

Specifiikm

(insulated), Estabkhed Reliabitky, General

for

Capacitor. f%ed, Ebctmlytio (Aluminum Oxide) Established Reliabil.~ and Nonestablished ReKaMIity, General SpecdfbNion for

MIL-G39018

10.14

MIL-C-39019

14.5

Cfrcutt Breakera, Magn@iq Low Power, Sealed, Trip%ee, ~bn for

MIL-G39022

10.4

~r, ~d. Mettiized Paper, Paper-Plastic Film, or Plastic Film Dielectric, Direct and Alternating Current (Hermetically Sealed m Metal Caaas) Estabfbhed Reliability, General Specification for

MIL-R-39023

9.15

Resistor, Varkble,

MIL-R-39035

9.13

Resistor, Variable,Nonwhwound, (Adjustment Type) Established Reliability, General Spedkttbn for

MiL-G49142

15.1

Conne@or, Triaxial, RF, General Specification for

MIL-P-5511O

152

PrintedWdng Boards

General

Nonwirewound, Precision, General Specification for

Reliabilii,

General Specification for

MIL-R-65W2

9.2

MIL-G55235

15.1

Connector. Coaxial, RF, General Specif”=tion for

MIL-G55302

15.2

Connector, Printed Circuit, Subassembly and Accessories

MIL—G65339

15.1

Adapter, CoaJC~ RF, General SpeMc8tbn for

MIL-G65514

10.5

qor. ~~, ,~k (CWM@tdfizd Plastic) Dielectric, Direct Current In Non-Metal Cases, General Spedfii”bn for

MIL-C-5S629

14.5

Circuit Breaker, Magnetic, Unsealed, Trip-Free, General Specification for

MIL-T-S5631

11.1

Transformer, Intormdiato Ftewemx, Radio Frequency, and Discriminator, General Specific&lon”for . -

Resbtor,F~~EstddWd

------

MIL-HDBK-2 17F

2.0

REFERENCE

DOCUMENTS

SECTION#

SPECIFICATION ML-C-55681

10.11

~r, Rewility,

MIL-(X3383

Established

Conne, Ekc&icaf, Circular, High Demity, Quiok Dmnect, Envhonment Resisting, and Acc=swies, General SpecHMh

15.1

MlL~1511

Chip. M@t@lebayer, Freed, Ceramic Diekct~ General Sp&iGat”m for

for

Circ@i6reaker, Remote ~ntrol, Thermaf, TripFree. General SpecMiion for

14.5

MtL-R-S3401

9.4

MiL-G83421

10.6

~r, f%cf Supennetallizodf%stb f% DiskcMc(DC, ACor DC Soalecf in Metal Cases, ~bhed Refiabiiity, and AC) Hmwtb#y ud~~

MIL-C-83513

15.1

Cwmecbr, EkcZrical, Rectangular, Mbrominiaturo, Garbefal Specification for

ML-C-83723

15.1

Connedor, Ebctricd (Circular Environment Resisting), Receptacles and Plugs, GeneraJ Speclficatbn for

MIL-R=72s

13.1

Relay, Vacuum, GoneraI Specification for

Resbtor Notwodq Fixu!, Fti.

Ganwal Spdkabn

for

Polarized Shell.

MIL-R-63726

13.1, 13.2, 13.3

MILoS-83nl

14.1

Switch, Toggle, Unsealed and Sealed Toggle, Ganeral Specifiin

MN-C-83733

15.1

Conmw%x, Ebc!dc@, Miniature, Rectangular Type, Rack to Panel,

Relay, lime Delay, Elec!ric and Electronic, General Specifiiion

for

for

EnvironmentResisting,200 Degraas C Tcxal ContinuousOpOfa@J Temperature, General Spedcatbn

MIL-S43734

socket

15.3

Pl@n

for

Electronic Components, General Specifiikm

for

STANDARD MIL-STD-756

Rehbility

MIL-STD-883

Test Mathods and Prmxdures for Microelectronics

Mk4TD-975

NASA Star#ad E&trid.

MIL=WD-1!547

Pmt8, Matwials ●nd Procasses fof Spaco Launch Veh&k8, Requirements for

MtL-Sl’D-1~

~

Modeling and Prec&tbn

Efactronic and EbctmmachanbalPartsLkt TechnioaI

Requtrwnents ?orHyMd Mcrockufl FacflltWJand Unes

copies of specImat&ns and Stmdads required by contractors in comectbn with spcific acquisition functbns should be oMlnad fmrn the contracting activityor as directed by the a)ntracting offiir. ~ngle _ - ako available(withoutcharu8)uponwrfttenrequest I to:

StandwdizatbnDocumentOrderDesk 700 Robins Ave. Building 4, Seotion D Philadelphia, PA 19111-5094 (216) 697-2867

2-6

W

-----

—- — ~_––

“.

v.,

.

.

~“.-y..,-..--

“,.

-

. . -----

/

MIL-HDBK-217F

I

3.0

INTRODUCTION

I

I

Rellablllty Englneerlng - Reliability k currently recognized as an essential need in miIitary 3.1 ebctronic systems. It is looked upon as a means for -cing costs fmm the factory, where rework of debotive cxmpcments adds a mn-proddve overhead expense, to the field, where repak costs Inotude not onty pa~ and labor but also transportation and storage. More knportantly, reliabilitydirectly inpacts force effectiveness, measured In terms of availability or sortie rates, and determines the stze of the “bgistics w inhibitingforce utilization. The achievement of reliability is the fumtbn of refiabifity engineering. Every aspect of an eleotrodc system, from the purtty of matertals used in fts oomponent devices to the operatots Inteflaoe, has an impact on reliability. RelMWty engineering must, therefore, be appbd throughout the system’s development in a dillgent and timely fashion, and integmted wfth other engbewhg disoi@nes. A variety of reliability engineedng tools have been developed. supportinga basic tool, reliabilitypredctbn.

This handbook provides the models

The Role of Reflablllty Prediction - Reliability predictbn provides the quantitative baseline needed to assess progress in reliabWty engineering. A prediction made of a proposed design may be

3.2

used in several ways. A characteristic

of Computer Aided Design is the ability to rapidly generate alternative solutions to a particular problem. Reliability pmdiibns for each design alternative provide one measure of relative worth which, mrWned with other considerations, will aid in selecting the best of the available options. Once a design is selected, the reliabilii predktii nwiybe used as a @de to Iwpmvement by showing the hphest contdbutorsto faifure. If the pwt stress analysis method is used, it may also rewaf other Wtful areas for change (e.g., over stressed parts). The Impact of proposed design changes on reliabilityoan be detemnktedonly by comparfng the reliatMty predictions of the existing and proposed designs. The ablltty of the design to maintain an accepable reliability level under environmental extremes may be the need for The predctkms may be used to evafuate assessed through reHaMty pmdictbns.

erwtronmental control systems. The effects of complexity on the probability of mission success can be evaluated through reliability predictions. The need for redundant or baok-up systems may be determined with the aid of reliability predictions. A tradeoff of redundancy against other reliability enhancing techniques (e.g.: more oooling, higher part quality, etc.) must be based on reliability predictions coupled wfth other pertinent considerations such as cost, spaoe limitations, eto. The predbtbn will also he~ evahwte the s@fficance of reportscf fallume. For exa@e, if emmml falkrres of one type or oo~nent occur In a system the predkted faliure rate can be used to determine whether

the number of failures Is commensurate with the number of components used in the system, or, that it indicates a pmbbm area. Finally, reliability predictbns are useful to varbus other engineering analyses. As examples, the location of txdtt-h-test circuitry 6houfd be influenced by the predicted failure rates of the chwltry monftored, and

malntenanoe strategy plannem can make use of the relative pmbabifhy of a failure’s location, based on predictions, to minimize downtime. Reliability predbtbrts are also used to evaluate the probabilities of fajlure events described in a failure modes, effeots and criticalityanalysis (FMECAS).

3-1

—----

-—e

--

*

—e–-m—~+

———__ ... ... . .. ____.=----

-

— — .

MIL-HDBK-217F 3.0

INTRODUCTION

Limitations of Rellabiltty Prodktions - This handbook provides a common basis for reliability predictbns, based on anatysis of the best available data at the the of Issue. It Is interded to make reliability prediction as good a tool as possble. However, like any tool, reliabilii predktbn rrust be

3.3

used htefiigently,withdue oonskferat)onof its MnWions. The first limitation is that the failure rate models are point estimates which are based on available data. Hence, they are valii for the condltbns under which the data was obtained, and for the devkes oovered. Some extrapolation during model development is possible, but the inherently empirical nature of the models can be severely restrictive. For exanple, none of the models m this handbook predict nuclear suMvability or the effects of bnizing radiatbri. Even when used in similar environmetis, the differences between system appliiions can be significant. Pmdkted and aohleved rWaMlty have atways been doaer for ground electronic systems than for avbnk systems, because the environmental stresses vary fess from system to system on the ground and hence

the field cor@tbns are In general cbser to the environment under which the data was oo#e@edfor the prediction model. However, failure rates are also impacted by operational scenartos, operator characteristics, maintenance -s, measummmt ~es and dtlfe~~s In deftnftbn of falfure. Hence, a rellablflty predktlon should never be assumed to represent the expected field reliability as Mean-Tirne-Between-Removak, etc.). measured by the user (i.e., Mean-The-Between-Maintenance, This does not negate its value as a reliability engineering tool; note that none of the applications discussed above requires the predicted reliability to match the field measurement. Electronic technology is noted for its dynamk nature. New types of devices and new processes are oontjnually introduced, compounding the difficultiesof predkting reliability. Evolutbnary changes may be handled by extmpolatbn from the existing models; revolutionarychanges may defy analysis. Another Ilrnitatbn of retiablltty predktbns is the mechanks method re@res a signlfkant afmmt of design detail. mk

of the process. The part stress analysis naturalty knposes a time and cost permtty.

More signiiioantly, many of the detatts are not avaitab+ein the earty des~

stages. For thts reason rn!s

handbook contains both the part stress anatysts method (Sectbns 5 through 23) and a simpler parts count method (Appendix A) which oan be used in early design and bid formulatbn stages. Finally, a basic limitation of reliability prediction is its dependence on correct application by the user. Those who correctly apply the models and use the information in a conscientious reliability program will find the predktbn a useful tool. Those who V&Wthe prediction only as a number whkh must exceed a specifiedvalue can usualty find a way to achievetheir ~at without any ion the system.

3.4

Part

Stress

Analysls

Predlctlon

Appltcabllfty - Th&smethod is applicable when most of the design is completed and a detailed pads list incbding part stresses Is available. ft can also be used during later design phases for rel&bility trade-offs vs. patl selection and stresses. Sections 5 through 23 contain failure rate models for a broad variety d parts used in ekmtrmb equipment. The parts we grouped by major categories and, where appropriate, are subgrouped within oategorfes. For mechanical and electromechanical pats not covered 3.4.1

by this Handbook, refer to Bibfbgraphy ftems 20 and 36 (Appendix C).

The failure rates presented appty to equipment under normal operating conditbns, Le., with power on and performingIts intended functbns in Its ~ended environment. Extrapolationof any of the base faihn rate models beyond the tabulated vahJessuch as high or subzero temperature, electrical stress values above 1.0, or extrapolation of any associated model modifiers is oompletety invalid. Base failure rates can be interpolated between electrical stress values from O to 1 using the underlying equations. The general procedure for determining a board level (or system level) failure rate is to sum individually calculated failure rates for each oomponent. This summation is then added to a failure rate for the citcuit board (which includes the effects of solderfng parts to tt) using Section 16, Interconnection Assemblies.

3-2

MIL-HDBK-217F

INTRODUCTION

3.0

For parts or wires soldered together (e.g., a jumper wire between two parts), the connections model appearing in Section 17 is used. Finaliy, the effects of connecting circuit boards together is accounted for by adding in a faiiure rate for each connector (Section 15, Connectors). The wire between connectors is assumed to have a zem failure rate. For various sewice use profiles, duty cycles and redundandes the procedures described in MIL-STD-756, Reliability Modeling and Prediction, should be used to determine an effective system ievel faiiure rate.

3.4.2

Part Qualtty - rne~~of apmh~am effti~ti pm fdhmratea~~mlntb part models as a factor, *Q. Many parts am covered by spedfbations that have several quaffty levels, hence, the part models have vaiues of XQ that am keyed to these qu~~

leve~=

Such Pafis w~h their

quality designetora are shown h Table 3-1. The detdled requirements for these levels are ciearty defhed

in the applicable specffkation, except for mkrockcuits.

depenckht on the ~mber

of MIL-STD-683

TatNe 3-1: w

was

Mkmimfis

screens (or equivalent) to whii

Parts With Multl-Level

have qualhY levels which are they are subjected.

Qua!lty Speclflcatlons Uvumwa

E

7

UWw.

Microcimuits

S, B, B-1, Othec ~aliiy Screening Level

Discrete Semiconductors

JANTXV, JANTX, JAN

Capacitors, Established Reiiabiiii (ER)

D, C, S, R, B, P, M, L

Resistors, Established Reliablllty (ER)

S, R, P, M

Coils, Molded, R. F., ReiiabUty (ER)

S, R, P, M

Relays, Established Reliabiiily (ER)

R, P, M, L

r.q.

. .

. .

.

I

-

Judged by

Some Mrts are covered by older specifications, usualty referred to as Nonestablished that &“ not have rnutti-levels of qu~i. These part rn&fels generally have two qualfty ‘MIL-SPEC.-, and “Lower”. If the part is procured in complete accordance specification, the ZQ value for MIL-SPEC should be used. If any requirements

Reliability (Non-ER), levels d&i@ated & with the applicable are waived, or if a

commercial part is procured, the XQ value for Lower should be used. The foregoing discussion involves the ‘as procured” part quality. Poor equipment design, production, and testing facilities can degrade pad quality. The use of the higher quality parts requires a total

W?U@M~ de$~ ~ W~ COtid process co-~rate with the high part quality. it wouid make iiile sense to procure high quality parts on!y to have the equ”qmentproduction procedures damage the paftS or introduce latent defects. Total equipment program descriptions as they might vary with different part quality mixes is beyond the scope of this Handbook. Reliability management and quality control procedures are described in other DoD standards and publications. Nevertheless, when a proposed equipment development is pushing the state-of-the-art and has a high reliability requirement necessitating high quality pans, the ~ equipment program should be given careful scrutiny and not just

3-3

I

MIL-HDBK-217F

I

INTRODUCTION

3.0

— the parts quafhy. Otherwise, the bw failure rates as predicted by the models for hgh quality parts will not

be realized.

3.4.3

models h@lJde the Uee Environment - N Dart reliabm through the environmental factor,- %Er except ~orthe effects of bn~

of envkorlmental Streeses @~~. The dem~b~ of

effeots

these envhunentsareshownin TaMe3-2. The~fac!or isqxmtfWdwithfn eachpartfaiUre rat8rnod8l. These environments encorrpass the major areas of equprnent use. Some eqJ@ent wlfl experience h such a case, the more than one environrrwnt during its normal use, e.g., equipment in spacecraft. reliabitii analysis should be segmented, namely, missile launch (ML) conditions during boost into and

returnfromo~

and space flight(SF) while Table 3-2:

in orbft.

Envhomnental

Symbol

and Deacrlptlon

EqtJhratBnt Environment Ground, Bengn

~

Symbol GB

MIL-HDBK-217E, Notice 1 ~ symbol GB %S

Nonmobile, temperature and humidity controlled environments readily accessitde to maintenance; includes laboratory instruments and test equipment, medical electronic equipment, businass and scientifc computer mmplexes, and missiles and support equipment in ground sibs.

Ground, Fixed

GF

%

Moderately amtrolied environments such as installation in permanent racks with adequate oooling air and possible installation m unheated buildings; includes permanent tnstattatton of air traffic control radar and communications facilities.

Ground, MoMle

GM

GM

Equipment installed on wheeled or tradwd vehicles and equipment manually transported; includes ttiicai missile ground support equipment, mobile communication equipment, tactical fire direction systems, handheld =mmunications equipment, laser designations and range finders.

Mp

Naval, Shelterad

NS

NS ‘SB

Naval, Unsheltered

Nu

% NW NH

3-4

D-ription

Includes shehered or bebw deck conditions on surface ships and equipmant installed in submarines.

Unprotected surface ahipborne equipment exposed to weather conditions and equipment immersed in salt water. Includes sonar $@pment and equipment installed on hydrofoil vessels.

I .4-..-.

.

.

.

.

.,

,.,

,.,

.

.

.

I

.,

. .. . . . .

..,..

. . .

.

!.

.

.

...”

.

.

.

..,.

MIL-HDBK-217F

3.0

Environmental

Tabto 3-2:

Symbol

and Deecrtptlon

INTRODUCTION

(CXMWd)

E@valont Description

Environment %E

Airborne, Inhabitsd,

symbol AK

‘tc Am *IB

Typical conditbns in cargo compartments whbhcan beoaX@adby arlahcraw. Envlronmont axhmes d ~~U~, ~u~,sand vibration W. minimal.

Examplas Inctuda bng mission akcraftsuchas

thac130,c5, B!52andc141.

Thisoatagory aboappueata ~edaroasinbwu performance smaller aircraft such as the T38.

Airborne, Inhabited, Fighter

‘IF

‘IF

Same as NC but installed on high performance

‘IA

aircraft such as fighters and interceptors. Examples include the F15, F16, F1 11, F/A 18

and Al O aircraft.

Airborne, Uninhabited,

%C

Am + %JB

Environmentally uncontdbd areas which oannot be rnhdited by an aircrww during flight. Environmental extrernos of pressure, tefnperature and shock maybe severe. Examples include uninhabited araas of bng

missiin ahwaft such as the C130, C5, B52 and C141. This category aiso appJiis to uninhabited area of bwer performance smaller aircraft such as the T38.

Airborne, Uninhabited, Fighter

Same as NC but installed on high performanem aircraft such as f~htem and interceptors. Exarnplesincludethe F15, F16, F111 and AlO

AUF

aircraft.

Airborne, Rotary w-

Space, Flight

ARvv

SF

%/

Equipment installed on helicopters. Ap@h to both internally and externallymounted squipmentsuch as laser designators, fire mntrol systems, and communications squ”pment.

---

APP=J—

~mw9~~~

cmditions. Vehicle neither underpowered flight nor in atmosphorio reentry; includes satellites and shuttles.

3-5

I

I

I

MIL-HDBK-217F 3.0

INTRODUCTION —

Table

3-2:

Environmental

Symbol

and

Descrfptlon

Equivabnt MIL+fDBK-217E, Mice 1 ~ Symbol

Environment

(cent’d)

Description

~E Symbol Missile, Flight

Conditions r.lated to poweredflightof air breathing missibs, cruise missiles, and missiles in unpowered free flight.

%

+

4A

Miiile,

Launch

Cannon, Launch

%

\ u=

CL

CL

Severe amditions relatwi to missile launch (air, ground and Sea), space Vshiob boost into orbit, and vehicle re+n~ and landing by par~e. Also applies to soI&l roclwt motor ww~bn POWW@ fhght, and torpedo and missile launch from submarines.

Extremely severe conditions related to cannon launching of 155 mm. and 5 inch guided projectiles. Conditions apply to the projectile trom launch to target impact.

3.4.4 Part Failure Rate Models - Part failure rate models for microelectronic parts are significantly different fmm those for other parts and are presented entirely in Section 5.0. A ~pical example of the type of model used for most other part types is the folbwing one for discrete semiconductors:

~=~fiTfiA~R~S~C~Q~E

is the patt failure rate, is the base failure rate usually

expressed

by a model relating the influence of electrical and

temperature stresses on the part, and the other n factors modify the base failure rate for the category eppkath

of environmental

amf other parameters that affectthe paft reKMity.

me ZE and XQfaotors are used in most ali models and other x factom app~ only to SWC~~ ~dels.

The

applicability of z factors is Identified in each sectbn. The base failure rate (~)

models are presented

in each part section along with identification of the

applicable model factors. Tables of calculated ~ values are also provided for use in manual

calculations.

The model equations can, of course, be incmporated into computer programs for machine processing. The tabulated values of ~ are cut off at the part ratings with regard to temperature and stress, hence, use of parts beyond these cut off points will

3-6

overstress tk pan. The use of the lb models in a ~mPuter

MIL-HDBK-217F . 3.0

pmgrarn should take the part rating limits into account.

The ~

equations are

INTRODUCTION

mathematically continuous

beyond the part ratings but such faiiure rate vaiues are invalii in the overstressed regions.

Aii the part modeis imiude faiiure data from both cahstmphic

and permanent drift failures (e.g., a resistor permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for motors whch show an increasing failure rate overtime. FaiJures associated with connection of parts into circuit asserrbiies are not imluded within the part faiiure rate models. Information on cxmnection reliabilii is provided in Sections 16 and 17.

- The use of this prediction method requires the determinatbn of the 3.4.5 Thermal Aspects temperatures to which the parts are subjected. Sinoe parts reliability is sensftive to temperature, the thermal anatysis of any design shouid fairty accurately provide the ambient temperatures needed in using the part models. Of course, bwer temperatures produce better reliihty but aiso can pmc&ce hcreased penatties in terms of added toads on the environmental oontrol system, unless achkved through improved thenmal design of the equipment. The thermal analysis shouid be part of the design process and included in ail the trade-off studies covering equipment performance, reliability, weight, volume, environmental control systems, etc. References 17 and 34 listed in Appendix C may be used as guides in determining component temperatures.

3-7

[ ,,.,.... . I

,., ,.

,..

.

...

.,. ...!

,.-

.

.

.

.

I

MIL -HDBK-217F

4.0

RELIABILITY

ANALYSIS

EVALUATION

.

“ for evaluating a reliability predii report. Tabie 4-1 provides a ~ For completeness, the cttecfdist includes categories for refiabiiity modeling and albcatbn, which are sometimes deiivered as part of a predctibn report. it should be noted that the scope of any reliability analysis depends on the specific requirements called out in a statement-of-work (SOW) or system k not intended to change the soope of these requirements. speckatbn. The inclusion of this ckkiist Tabl. Malor COncarns —--—-— --—-. --—

4-1:

Reliablllty

MODELS Are allfunctional elements included in the raliabiihybbdc diagram /model? Are all modes of operation considered in the nlti

modd?

Do the math model results show that the design achieves the reliabiiii requirement?

ALLOCATION Are system reliability requirements allocated (suMivided) to useful levels?

Does the allocation process consider ;am~:;?ty, design flexibility, and safety m PREDICTION Does the sum of the parts equal the value of the module or unit?

m

Anatysls

Checkltet Commonts — . . . ..-

System design drawingddiagrarna must be rwiewed to be sure that the relkbilii modekfkgram qreoa with tho hardwn. ~ @OS, an~ae paths, degraded conditbns and redundant units must bedefinedandmodeted. Unit failure rates and redundancy aquations are used from the detailed paft predictions in the system math model (See MIL-STD-756, Reliability Predictbn and Modeiing).

Useful Ievets are defined as: equipment for sulxxmtractors, assemblies for sub-subcontractors, arouit boards for designers. Conservative values are needed to prevent reallocation at every desgn change.

Many predictbns neglect to include all the parts producing optimistic results (check for solder connections, connectors, circuit boards).

Are environmental ccmdit”mnsand part quality representative of the requirements?

Optimistic quality levels and favorable environmental cxmditions are often assumed causing optimistic resutts.

Are the circuit and part temperatures defined and do they represent the design?

Temperature is the biggest driver of part failure rates; bw temperature assumptions will cause optimistic results.

Are equ~ment, assembly, subassembly and part reliability drivers identified?

Idontifioation is needed so that corrective actions for reliabitii improvement can be considered.

Are alternate (Non MIL-HDBK-217) failure rates highlighted along with the rationale for their use?

Use of alternate failure rates, if deemed necessary, require submission of backup data to provide credence in the values.

Is the level of detail for the part failure rate models sufficient to reconstruct the result? Aro critical components such as VHSIC, Monolithic Microwave Integrated Circuits (MMIC), Application Specific Integrated Circuits (ASIC) or Hybrids highlighted?

Each component type should be sampled and failure rates completely reconstructed for accuracy. Prediction methods for advanced technobgy parts should be oarefully evaluated for imp-on the module and system. I I

4-1

.

.

MIL-HDBK-217F

5.0

MICROCIRCUITS,

INTRODUCTION

This section presents failure rate prediction models for the following ten mapr classes of microelectronic devices:

Swis2rl 5.1

Monolithic Bipolar Digital and Linear Gate/LogicArray Devices

5.1

Monolithic MOS Digital and Linear Gate/Logic Array Devices

5.1

Monolithic Bipolar and MOS Digiial Microprocessor Devices

5.2

Monolithic B~lar

5.3

Very High Speed Integrated Chcuit (VHSIC/VHSIC-Like Gates)

5.4

Monolithic

5.4

Monolithic GaAs MMIC

5.5

Hybrid Microcircuits

5.6

Surface

5.7

Magnetic Bubble Memories

and MOSMemoryDevices and VLSI) CMOS Devioes (> 60K

GaAs Digital Devices

Acoustic Wave

Devices

In the title description of each monolithic device type, Bipolar represents all llL,

ASITL,

DTL, ECL, CML,

ALSITL, HTTL, Fl_ll, F, L~L, SITL, BiCMOS, LSITL, IIL, 13L and ISL devices, MOS represents all metal-oxide microcimuits, which includes NMOS, PMOS, CMOS and MNOS fabricated on various substrates such as sapphire, poiycrystaftine or single crystai siiicon. The hybrid model is structured to accommodate aii of the monolithic chip device types and various complex”~ Ieveis. Monolithic memory complexity factors are expressed in the number of bits in accordance with JEDEC STD 21A. This standard, which is used by ail government and industry agencies that deal with microcircuit memories, states that memories of 1024 bits and greater shall be expressed as K bts, where 1K = 1024 bits. For example, a 16K memory has 16,364 bits, a 64K memory has 65,536 bits and a 1M merno~ has 1,048,576 bits. Exact nurrbers of bits are not used for memories of 1024 bits and greater. For devices having both linear and digital functions not covered by MIL-M-3651 O or MIL4-38535, use the iinear modei. Line drivers and iine receivers are considered iinear devices. For iinear devices not covered by MIL-M-3851 O or MiL-i-38535, use the transistor count from the schematic diagram of the devioe to determine circuit complexity. For digitai devices not covered by MIL-M-3851 O or MIL-I-38535, use the gate count as determined from the logic diagram. A J-K or R-S flip fbp is equivalent to 6 gates when used as part of an LSi circuit. For the putpose of this Handbook, a Oate is constierecf to be any one of the following functions; AND, OR, exciusive OR, NAND, NOR and inverter. When a bgic diagram is unavailable, use dev.ke transistor count to determine gate count using the folbwing expressions:

Bipolar CMOS Al! other MOS except CMOS

No. Gates = No. Transistors/3.0 No. Gafes = No. Transistors/4.O No. Gates = No. Transistors/3.O

5-1

MIL-HDBK-217F

5.0

MICROCIRCUKS,

INTRODUCTION

A detailed form of the Section 5.3 VHSIC/VHSIGLikemodel is inoluded as Appendix B to allow more detailed WleWfs to be performed. Reference 30 should be consulted for more information about this model. Reference 32 should be consulted for more Informatbn about the models appeartngin Sections5.1,5.2, 5.4,5.5. and 5.6. Reference 13 should be consulted for additional information on Section s.7.

MIL-HDBK-217F

5.1

GATE/LOGJC

MICROCIRCUITS,

ARRAYS

AND

MICROPROCESSORS

DESCRIPTION 1. Bipolar Devices, Digital arxf Linear Gate/Logic Arrays 2. MOS Devices, Di@tal and Linear Gate/Logio Arrays ArTay (~) am 3. F*H PmgranwwMe Lx Programmable Array Logic (PAL) 4. Microprwessors

(ClZT + C2Y@ ~

~=

Hgml,ar Di@al and Linear GafeA@c DighJ No. Gates 1 to 101 to 1,001 to 3,001 to 10,001 to 30,001 to

100 1,000 3,000 10,000 30,000 60,000

~

1

to

101 to 301 1,001

to to

100 300 1,000 10,000

I

c.

.020 .040 .060

Linear No. Transistors

c,

100 1,000 3,000 10,000 30,000

.010 .020 .040 .080 .16 .29

ltol

c, .010 .020 .040 .060

to 60,000

●NOTE:

For CMOS gate counts above 60,000 use the V1-iSIC/VHSIC-Like

101 to 301

1,001

Die Complexity Failure Rate - Cl

Up to 8 Upto 16 up to 32

PLA/PAL No. Gates

.010

1 101 1,001 3,001 10,001 30,001

No. Bits

Failure Rate-Cl c,

up to 200 201 1,001

.010 .021 .042

to 1,000 to 5,000

D@al and Linear Gate/Logic Army Die CorqSexlty Failure Rate - Cl”

DQital No. Gates to to to to to

c. .0025 .0050 .010 .020 .040 .080

Amy Die Cm@exity

Linear No. Transkws

I [

Fdlures/106 t+ours

to to

3 1,0

10,0

I

PLNPAL No. Gates up to 500 501 to 1,000 2,001 to 5,000 5,001 to 20,000

c,

.00085 .0017 .0034 .0068

model in Section 5.3

All Other Model Parameters Parameter Refer to

Bipolar

MOS

c,

c,

Section 5.8

.060

.~4

Section 5.9

.12

.28

Section 5.10

.24

.56

II

5-3

..

.

MIL-HDBK-217F . ●

5.2

MICROCIRCUITS,

MEMORIES DESCFilPTION 1. Red ~ Memories (ROM) 2. ~armable Read Only Memorns (PROM) 3. lJ~ mPROMS (UVEPROM) 4. “Flash; MNOS and Floating Gate ElectdcaBy bOkJdf3S both Erasable PROMS (EEPROM). fbating gate tunnel oxide (FLOTOX) and textured polysiliin type EEPROMS 5. Static Rancbm Access Mermles (SRAM) 6. ~ R~ /@cess Mwnories (DRAM) ~=

(C1 %T + C2 %E + ~

~

~

FailumsH06

HOtJm

Die Complexity Faih.JmRate -Cl M

lar

>

PROM, uvEPROM, Memory Size, B (Bits)

ROM .00065 .0013 .0026 .0052

up to 16K 16K
Al Factor for ~c Total No. of Programming Cycles Over EEPROM Life, C

z=’ .00085 .0017 .0034 .0068

SRAM DRAM

(MOS & BiMOS)

ROM, PROM

SRAM

.0013 .0025 .0050 .010

.0078 .016 .031 .062

.0094 .019 .038 .075

.0052 .011 .021 .042

~

Cablatbn Textured-

Flotox ‘

Polp

.00070 .0014 .0034 .0068 .020 .049 .10 .14 .20 .68 1.3 2.7 3.4

.0097 .014 .023 .033 .061 .14 .30 .30 .30 .30 .30 .30 .30

Factor for kc

I Total No. of Programming Cycles Over EEPROM Ltfe. C

Calculation I Textured-Poly I

Up to 300K up to 100 100< CS2OO 200< C<500 500< CS1K 1K
Al =6.817

x10+(C)

2.

No underlying equation for TexturedPoly.

o

300K < C s 400K

1.1

400K < C s 500K

2.3

AJl Other Mc Parameter

IelParametem Refer to

XT

Section 5.8

C*

Section 5.9

fiE,

~Qt

Section 5.10

XL

(EEPROMS

~c

Page 5-5

only)

~c

= O

For all other devices

5-4

.

.

A2

..

I

I

MIL-HDBK-217F

5.2

MICROCIRCUITS,

w,

-

~=o

All Memory Devices Except Fbtox and Textured-Poly EEPROMS Fbtox and Textured Poty EEPROMS ~[

c=

Al

61 +

A*B* ~

1

‘ECC

Al

P-54

P* Page 54

B,

Page 5-6

Page 5-6

A2

A2=o

Page 5-5

02

~=o

P*

%Q

Sectbn

Error Correction Code (ECC) Optkms: 1. No On-Chip ECC

MEMORIES

5-6

Seotion 5.10

5.10

= 1.0

%ECC = ~.0

2. On-ChP Hamming Code

~ECC = .72

%ECC = .72

3. Two-Needs-One

~ECC = .68

~ECC = .66

~ECC

Redundant Cell Approach

NOTES:

1.

See Reference 24 for modeling off-chip error detect”on and correction schemes at the memory system level.

2.

If EEPROM

3.

Error Correctbn Cde Optbns: Some EEPROM manufacturers have incorporated on-chip error correction chxwitry into their EEPROM devioes. This is represented by the on-chip hamming code entry. Other manufacturers have taken a redundant cell -~ which immporates an extra storage transistor in every memory ceil. mis is represented by the two-needs-cm redndant cell entry.

4.

The Al and

type is unknown, assume Fbtox.

4

factors shown in Section 5.2 were devebped

based on an assumed

system life of 10,000 operating hours. For EEPROMS used h systems whh significantly bnger or shorter expected lifetimes the Al and ~ factors should be multiplied by: 10,000 System

Lifetime

Operating

Hours

5-5

MIL-HDBK-217F 5.2

MICROCIRCUITS,

MEMORIES t

1

~ “Fa

x

co

x *

8 m“

i

n

s

I

%6

===1

■

I

.—

,,

.. ,

.

MIL-HDBK-217F

5.3

MICROCIRCUITS,

VHSICNHSIGLIKE

AND

VLSI

CMOS

DESCRIPTION CMOS greater than 60,000 gates ~

“ %@MFGfiPCD

+ ~pzEx@p~

Failurest106 HOUrS

+ ~~~

ANOther Model Parameters

Ok Base Falture Rate - ~D I

Part Type

’60

Logic and Custom

0.16

me

0.24

Army

Parameter

*

Refer to

%T

Section 5.8

%E~~

Se@on

Correction Factor

Package Type

Manufaotwing

I

%FG

II

.55

Process

QML or QPL Non QML or Non QPL

I

Hefmetc

DIP Pn Grid Amy CMp Carrier (Surface Mount

2.0

- Xm

‘PT Nm&mettc

I

Paokage Type

5.90

1.0

1.3

2.2 4.7

2.9 6.1

T@chnnlnnv\

Dle Complexity Correction Factor - ~D I

I

Feature S&e

i

(Mkmns) .80 1.00 1.25

I

As.4 8.0 5.2

I

[ I I

A =

‘-f+)

[v

Die Ama (Cr#) .7< AsI.O 1.0< As2.O 19 38 I 1 13 25 I I I I

.4< As.7 14 8.9

‘:i+-M

1 2.0< i I I

A s 3.0 58 37

Total Scrbed Chip Die Area in cm2 58

8“2

‘:’-’”a”sw;:bns)s)

Die Area Conversion: cm2 = MIL2 + 1S5,000 Package Base FaUure Rate - ~p

I

‘BP

24 28 40 44 48 52 64 84 120 124 144 220

.0026 .0027 .0029

ksp NP

Ekctrical Overstress Faiture Rate - l~h~

Number of Pins

= =

.0022+

((1 .72X

10-5)

Nu~r

of Package Pins

VTH (ESD %SC@bility o-

.0030 .0030 .0031 .0033 .0036 .0043 .0043 .0047 .0060

~OS

(NP))

‘TH

(VOttS))*

.065

1000

>1000-2000

.053

>2000-4000

.044

>4000-

16000

.029

> 16000

●

1

UJCU7_n

‘EOS

- (-In (1 -.00057

.0027

exp(- .0002 Vw))

/.00876

= ESD Susceptibility (volts)

Voltage ranges which will cause the pad to fail. If unknown, use O -1000 vofts.

U

Al

Q!

,.,

1

.-.

MIL-HDBK-217F

5.4

MICROCIRCUITS,

GaAs

MMIC

AND DIG~AL

DEVICES

DESCRIPTION Ga)iiim Arsenide Microwave Monolithic Integrated Citwit (GaIW MMIC) amt GaAs Digitai hltegrated Ci-ixhsUshg MESF~ Transistorsand Gold Based MetaJliion

W

Die Complexity FaiWe Rates - Cl

(No.of

1.

Cl

Application

4.5 7.2

1 to 100 101 to 1000

accounts for the following active

elements:

..

c,

complexity Elements)

%A

MMIC Devices Low Noise & Low Power (S 100 mVV) Drtvar& High Rnuer(> 100 mw) Unknown

1.0 3.0 3.0

Digttal Devices All Digital Applications

1.0

transistors, diodes.

< -:

Die CompkIXRy Failure Rates - Cl Complexity (No. of Elements) 1 to 1000 1,001 to 10,000

1.

Cl

c,

25 51

aocounts tor the following aotive

elements:

All Other Model Parameter

Parametem Refer to

XT

Sectbn

5.8

C*

Section 5.9

transistors, diodes. nE, XL,

5-8

I

~Q

Section 5.10

——

I ?

....

.,.

...

MIL-HDBK-217F

5.5

MICROCIRCUITS,

HYBRIDS

DESCRIPTION Hybf@ MicrociruJits

+.2XE)ICF~Iy

~=[~Nc~l(l

FaMureM06Hours

Nc

=

Number of Each Particular Conpnent

kc

=

Failure Rate of Each Particular Corqmnent

The general pmcechme for developing an overall hybrid faikJm rate )s to oalculde an individual failure fate for each component type used in the hybrid and then sum them. This summatbn is then modfied to axoun for the ovendl hybrid fumtiin (x#, suwning level (~), and matudty (~. ~ ~ ~ failure rate is a function of the active mmponent faiture modified by the environmental factor (i.e., (1 + .2 ~E) ). Ow th ~~ne~ ~ w~ in th fob~~ t8bk ar8 rnns~~ to ~nf~e 8@Wb~& ~

the overall failure rate of most hybrids. AU other cxxnponent types (e.g., m@stor& inductag et@ are considered to contribute lnslgnffkanttyto the overalt hybridfailure rate, and are assumed to have a failure rate of zero. This simplification is valid for most hybrids; however, if the hybrid consists of mostiy passive components then a failure rate should be calculated for these devices. tf factorirm in othi?r comQonenf . types, assume ZQ = 1, ~ =1 and TA = Hybrid Case Temperature for these calculat b~s. of&

Determination

Determine ~ for These

Handbook

Section

Mak~ These Asswptions L

co mponent Types Microcircuits

5

C2=0,

XQ=l ,1=

Section 5.12, ~P Discrete Semiconductors

6

~

When Determining

1, TJ as Determined from = O (for VHSIC).

= 1, TJ as Detemined

from Section

6.14,

%E=l.

Capacitors

10

~=1,

TA

= Hybrid Case Temperature,

~E=l. NOTE:

If maximum rated stress for a die is unknown, assume the same as for a discretely pdie of the same type. If the same dw has several ratings based on the discrete ~ type, assume the bwest rating. Power rating used sh6uld be based on case terrper~ure for discrete semiconductors. Chcuit Function Factor -

All Other Hybrfd Model Parameters

F

Digital Vii,

1.0 10MHz
Microwave,

f >1 G1-lz

Linear, f <10

Power

MHz

1

I

Circuit Type

GHz

I

~LI ~Q, ~E

I

Refer to Section 5.10 I

1.2 2.6 5.0 21

5-9

i

i

MIL-HDBK-217F

5.6

MICROCIRCUITS,

SAW DEVICES DESCRIPTION Surface Acoustic Wave Devices

$ = 2.1

IQ %E Fai)ures/106 Hours

Environmental

Quaiity Factor - ~ Screening Level

XQ

10TerTpf&mr’e Cycleal (+5% to

.10

Factor - xcL %E

Environment

.

+125°C) with end point electrical tests at temperature extremes. None beyond bestcwmmwkat practices.

.5

%3

2.0

%

I

4.0

%

II 1.0

I

his

4.0

Nu

6.0

AC

4.0 5.0

‘IF

5.0

%c

8.0

‘UF

8.0

‘RW

.50

SF

5.0

MF ML

12

CL

220

5-1o

1 I

El

I

.-—

I

MIL-HDBK-217F

5.7

MICROCIRCUITS,

MAGNETIC

The magnetic bubble memory device in its present form is a noMwnWic folbwing two mapr structural segments:

BUBBLE

MEMORIES

assembty consisting of the

1.

A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor hops), and required control and detection elements (e.g., generators, various gates and detectors).

2.

A magnetic structure to provide controlled magnetic fields consisting of permanent coils, and a housing. .

magnets,

These two structural segments of the device are intemcmnected by a mechanical substrate and lead frame. The interconnect substrate in the present technology is normally a printed cirwit bead. tt shoukf be noted that this model does not inohde external suppmt microelectronic devices reqJired for magnetk bubble memory operation. The model is based on Reference 33. The general form of the fakwe rate model is: ~=

~1 + ~

FaiJurest106 Hours

where: k, = Failure Rate of the Control and Detection Structure

~ = Failure Rate of the Memory Storage Area

ctips per Package - NR Nc

=

Device Complexity Failure Rates for Control and Detectbn Stmcture - Cl, and C,l

Number of Bubble Chips per

c,, =

Packaged Device

Temperature

~T=(.l)@xp [ 8.63

Factor - XT

-Ea X

1 10-5

(

1

TJ +273-=

)1

C2,

-

.0001 (N1)”226

N,

=

Number of Dissipative Elements on a Chip (gates, detectors, generators, etc.), N, $1000

Use: =

.8 to Caloulate ?tTl

Ea

=

.55 to Calotdate *T2

TJ

=

Junction Temperature

%

(°C),

25 STJS175 TJ

t

w

m

.

.00095( N1)”40

TCASE + IO”C

m

u

MIL-HDBK-217F

MICROCIRCUIT,

5.7

MAGNETIC

BUBBLE

MEMORIES

Device Complexity Failure Rates for Memory Storage Sttucture -Cl ~ and C99

Write Duty Cycle Factor - ~

=

.00007(h@”3

C22

s=

.00001 (N2)”3

N2

-

Number of Bits, N2s 9 x 106

%2 Zw

D= R/w=

=

1 Avg. Device Data Rate Mfg. Max. Rated Data Rate

No. ofReads

~,

per Write

NOTE: For seed-bubble generators, divide ~ by 4, or use 1, whkhever is greater.

b

AJlOther Model Parameters Parameter Section

I

C5

I

5.9 5.10

D=

5-12

Avg. Device Data Rate Mfg. Max. Rated Data Rate

~,

I

I &

MIL+IDBK-217F S.8

MICROCIRCUITS,

XT

TABLE

FOR ALL

-18

*

-1!! .

1 I

5-13

—.———

—_z—————...—

.,.

.

.-.

,!

..!-..

f

MIL-HDBK-217F I

I

I

5.9

MICROCIRCUITS,

C2 TABLE

FOR

ALL

I

Package Failure Rate for all Mhocircuits . —~. Fbnnetb . w% w/Solder or Weld S@ Pin Grid Array

Number of Funct”mnal Pins, Np

Dlf% ti

Gtass

Sea?

.

(PGA)l, SMT (Leaded and Nonkmded)

3 4 6 8 10 12 14 16 18 22 24 28 36 40

1.

c2=2.8

x 10+

3.

C2 = 3.0

x 10-5 (N~l

5.

C2 = 3.6

X 10+

C2

xp”

Fk@adcs wtth Axiaf Leads on

Cans4

50 Mil Centers3

Nonhermetic: DIPs, m SMT (Leaded and Nonleaded)5

.00047 .00073 .0013 .0021 .0029 .0038 .0048 .0059 .0071 .0096 .011 .014 .020 .024 .048

.00092 .0013 .0019 .0026 .0034 .0041 .0048 .0056 .0064 .0079 .0087 .010 .013 .015 .025 .032 .053 .076 .097

:: 128 180 224

.

-

(f$J ‘.m .=

.00022 .00037 .00078 .0013 .0020 .0028 .0037 .0047 .0058 .0083 .0098

.00027 .00049 .0011 .0020 .0031 .0044 .0060 .0079

2.

c~ = 9.0 x 10-5 (N&1”51

4.

C2 = 3.0

.0012 .0016 .0025 .0034 .0043 .0053 .0062 .0072 .0082 .010 .011 .013 .017 .019 .032 .041 .068 .098 .12

x 10-5 (N~2.01

1.08 (I$J

NOTES: 1.

SMT:

Surface Mount Technology

2.

DIP:

3.

If DIP Seal type is unknown, assume glass

4.

The package failure rate (C2) aocounts for failures associated only with the package itsetf.

Dual In-Line Package

Failures associated with mounting the package Section 16, Interconnection Assemblies.

5-14

..=

. ————————— ———

to a circuit board are accounted for in

I

MIL-HDBK-217F I

5.1O

MICFIOCJRCUITS,

%E,~L

Envinmment Factor - ~

ANDxO

TABLES

FOR

ALL

Quality Faotors - ~

Environment

%E

% %

.50

Descrf@on s~

2.0 4.0

% NS

4.0

N“

6.0

AC

4.0

%F

5.0

‘Uc

5.0

*UF

8.0

ARW

8.0

MF

5.0

SF

1:

.

I

u

.

Procured in fufl accordance with MIL-M-38!H O,Ciass S

requirements. 2.

Procuraf in full accordance with MlL-+=3853smd ~a B lherwo (Cfaae u).

3.

Hybrids: (Procured m Cfaaa s requirements (Qualily L@vOl K) of MIL-H~.

1.

Procured in full accordance with MIL-M-3851 O,class B requirements.

2.

Procured m fut!accordance with MIL-I-38535, (Class Q).

3.

Hybrids: Procured to Class B requirements (QualityLevel

.25

.50

ML

12

c1

220 Learning Factor - XL

Years in Production, Y

I

s .1 .5 1.0 1.5

7CI 2.0 1.8 1.5

1.0

1-f)of MIL-H-3$534.

1.2 *

XL=

.01 e)(p(s.ss - .35Y)

Y = Years generic cfevice type has been in production

Fully compliant with all requirements of paragraph 1.2.1 d MIL-STD-883 and procured to a MIL drmving, DESC drawing or dher government approved documentation. (Does not include hybrids). For hybrids use custom screening section below.

2.0

5-15

T**

& --

b--h

-a--s

-d.-

..—1

4 ---

I

.,.

.. . .

,, ..+....

.,.

MIL-HDBK-217F

5.10

MICROCIRCUITS,

%E, %L AND XQ

TABLES

FOR

—

ALL

Quality Factors (cent’cf): ~

Group

1“

2*

3

4*

CdcUlation for Custom Screening Programs Poinf Va)uatkm MlL-STD-& Scmermeat (Note 3) TM 10IO(Ternperature Cycle, Cond BMinirmsm)and TM 2001 (Constant Acceleratbn, Cord B Minimum) and W 5004 (or 5008

30 36

Th42020Pirld(PaRi0fe

11

TM 5004

5

50

for Hybrids) (Finaf Electrkals @Te~E%trenws) and TM 1014 (Seal Test, Cond ~ B, or C) and TM 2009 (External Visual) TM 1O1O (Terrqmature Cycle, Cond B Minimum) or TM 2001 (Constant Acceleration, Cond B Minimum) TM 5004 (or 5008 for Hytxlds) (Fhal EkOtca& @ Terrp Extremes) and TM 1014 (Seal Test, Cond A, B, orC) and TM 2009 (External visual) Pre-Bum in Electrkals TM 1015 (Bum-in B-LeveVS-Level) and TM 5004 (or 5008 for (Post Burn-in ElectdcaJs @ Te ~ Extremes) fmpaothJ0ie0

(or 5008 for Hybrids)

~)

37

11

(Final Electricats @ Te~rature

(B Level) (S Level)

(Note 1)

Extremes) TM 2010/17

6 7*

7

(internal Visual)

7

TM 1014 (Seal Test, Cond A, B, or C)

7

(Radiography)

8

TM 2012

9

TM2009 (ExternalVisual)

7

10

TM 5007/5013

1

11

TM 2023

(Note 2)

1

Bond Pull)

87

ZQ =2+ Z Point

●NOT APPROPRIATE NOTES: 1. 2. 3. 4. 5.

(GaAs) (Wafer Acceptance)

(Non-Destructive

(Note 2)

Valuations

FOR PIJWTIC

PARTS.

Point valuation only assigned if used independent of Grwps 1, 2 or 3. Point valuatbn onty assigned if used independent of Groups 1 or 2. Sequencing of tests within groups 1, 2 and 3 must be followed. TM refers to the MIL-STD-883 Test Method. Nonhermetk pafis should be used onty in controlled environments (i.e., GB and other temperaturelhumldtty

controlled environments).

EXAMPLES: 1.

Mfg. performs

Group 1 test and Class B bum-in:

7 -.

Mfg. performs

infernal visual test,

~Q

=

2 +_

87

seal test and final electrical test:

Other Commercial or Unknown Screening Levels

= 3.1 ~Q

fiQ=

=

2+~

87

= 5.5

10

5-16

.—___ . —

—-

., .,.

MIL-HDBK-217F

5.11

h81CROClRCU?TS, 7.s DETERMINATION,

(ALL

EXCEPT

HYBRIDS]

Ideally, device case temperatures should be determined from a detailed thermal analysis of the wmm. NV* @wtion temperature is then calculated with the fofbwing relationship: ..

TJ .

Tc +

Tempemture

OKP

TJ

=

Worst Case Ju~ion

Tc

=

Case Temperature (oC). If not avaiM#e,

Default Case Tempemture

TC (“C)

I

(3JC =

35

45

60

50

Junction-toese

~C).

(T~

60

w

the Wlowing default tatlb.

for all Environments

75

75

60

I 35

50

60

45

thermal resistance (°CAwtt) for a device soldered into a printed circuit

board. If OK is not available, use a Vabe contained in a specification for the closest equivalentdevke or use the following tabJe.

Die Area >14,400 Package Type (ceramic only)

(w

ew

Die Areas

14,400 rni?

8JC (~

Dual-in-Lm

11

28

Flat Package

10

22

Chip Carner

10

20

Pin Grid Array

10

20 70

Can

P

m~

=

The maximum power dmtion

realized in a systemappficatiin. If the applied power is not available, use the maxknum power dissipationfrom the specificationfor the closest equivalent device.

I

MIL-HDBK-217F

5.12

MICROCIRCUITS,

T-l

DETERMINATION,

(FOR

This sectbn descrfbes a method for estimating junction temperature

mounted inahybrkfpackage.

—

HYBRIDS)

(TJ) for integrated circuit dke

A~k~~mti~timormrew-e~-tiW

within a sealed package. Each substrate assetity

consists of active and passive chips with thick orthin

film metallization mounted on the substrate, whii

in turn may have multiple layers of metallization and

dielectric on the surface. substrate.

The

characteristics.

Figure 5-1 is a cross-sectional

layers within the hybrid are made The table folbwlng

view of a hybrid with a single multi-layered

up of various

materials

with different

thermal

Figure 5-1 provkles a llst of commonly used hybrid materials with

typical thicknesses and comesponding thermal conductivtties (K). If the hybrid internal structure cannot be determined, use the following default values for the temperature 1O“c; transistors, 25%;

diodes, 20W.

kalJrm

~

rise from case to junction: miomdrculs,

are at Tc.

CHIP (A) LID CHIP ATJACH (B) .

\~ I

INSULATING LAYER (C) m SUBSTRATE (D) MATERIAL THICKNESS, L i EPOXY (E)

PACKAGE LEAD

CASE (F)

Figure 5-1:

5-18

Cross-sectional

View

of a Hybrtd with a Single

Multl-Layered

Substrate

MIL-HDBK-217F

5.12

MICROCIRCUITS, Tvkal

DETERMINATION,

(FOR

HYBRIDS)

Hvbrid Characterktii

Feature From Figure 5-1

Typkal Thickness, + (in.)

Typical U!wge

Material

T-l

Conductivity, Ki .W/in* () Win

IL Ki ()()

i

( in2 oC/W

Chip Device

0.010

A

2.20

.0045

chip Devbe

0.0070

A

.76

.0092

Au Eutectic

Chip Attach

0.0001

B

6.9

.000014

Solder

Chip/Substrate

Attach

0.0030

B/E

1.3

.0023

Epoxy (Dielectric)

Chip/Substrate

Attach

0.0035

BIE

Epoxy (Conductive)

Chii Attach

0.0035

Thck Film Dielectric

Gl=

Alumina

Substrate,

Beryllium Oxide

Substrate,

Kovar

Silicon

.0060

.58

B

.15

.023

0.0030

c

.66

.0045

MHP

0.025

D

.64

.039

PHP

0.025

D

Case, MHP

0.020

F

AJuminum

Case,

MHP

0.020

F

4.6

.0043

Copper

Case,

PHP

0.020

F

9.9

.0020

NOTE:

Insubthg

Layer

Muftichip Hybrid Package, PHP: Power Hybrid Package

MHP:

6.6 .42

.0038 .048

(Pwc > 2W, TypicaUy)

;1(*)(‘i) em=

=

n

=

Number of Material Layefs

Ki

z

Thermal Conductivity of ith Material

Li

=

Thiiness

A

=

A

W/in* ~ ()

(User Provided or Fmm Table)

of im Material (in) (User Provided or From Table)

Die Area (inz). If Die Area cannot be readity determined, estimate as follows: A = [ .00278 (No. of DB Active Wire Terminals) + .041#

Estimate TJ

as Folk)ws: TJ = Tc + .9 (e~

Tc

=

Hybrid

Case

Temperature

eJ~

= Junction-to-Case

Pf)

=

(p~

(“C). If unknown, use the Tc Defautt Table shown in Section 5.11.

Thermal Resistance (°C/W) (As determined above)

Die Power Dissipation (W)

5-19

MIL-HDBK-217F

5.13

MICROCIRC

Example 1: Given:

UIT&

CMOS

EXAMPLES

Dlgftal Gate Array

A CMOS digitaltiming~ (4048) in an ahborne inhabitedcargo applkxdbn, case temperature 4Y’C, 75mW power deefpatim The device is pmwrad with normal marndacturetsscreening consisting of terrperature oycflng, oomtant aooeleratbn, electrical testing, seal test and external visual Owpectkm, in the seqMnce given. The oorrponent manufacturer also performs a B-1evel bum-in folbwed by electrical testing. AU screens and tests are performed to the applicable MILSTD-883 screening method. The package is a 24 pin oeramic DIP with a glass seal. The device has been manufactured for severaf years and has 1000 transistors.

Section 5.1

c1

=

.020

1000 Transistor

XT

=

.29

Determ\ne TJ from Sectbn 5.11

-250

Gates, MOS Cl Table, Digital Column

TJ = 48W + (28”@W)(.075w)

= 50W

Determine ~T from Section 5.8, Digital MOS Column.

c~

=

.011

Section 5.9

?tE

=

4.0

Section 5.10

7CQ

=

3.1

Seotion 5.10 Group 1 Tests Group 3 Tests (Blevel)

50 Points

TOTAL

80 Points

XL

Section 5.10

1

=

~=

Example Given:

2:

[ (.020)(.29)

+ (.011) (4)] (3.1)(1)=

.15 Failure/106 l-lows

EEPROM

A 128K

Flotox EEPROM

that is expected

to have a TJ of 80”C

and experience 10,000

readhmite cycles over the life of the system. The part is procured to all requirements of Paragraph 1.2.1, MIL-STD-883, Class B screenin level requirements and has been in in a 26 pin D7 P with a glass seal and will be used In an productbn for three years. tt b packagd airborne uninhabited oargo application. ~=(ClXT+C2YCE+~)nnL

c1

=

.0034

Section 5.2

XT

=

3.8

Section 5.8

C2

=

.014

Section 5.9

Sectbn

5.2

MIL-HDBK-217F

5.13 ~E

=

5.0

Section 5.10

ICQ

=

2.0

Section 5.10

XL

~

1.0

Section 5.10

.38

Section 5.2:

c=

b

A2B* %[ ~

= f32 = O for Fiotox

No ECC, %ECC = 1

A,=.l,7Ksc

s15KEntry

81 .3.8 (

~~

EXAMPLES

1

=AIB1+~~~

~

MICROCIRCUITS,

(Use Equation 1 at bottom of B1 and ~

Tabie)

= ‘1 B, = (-1)(3.8) = .38

I I

~=

Example 3: Given:

[ (.0034)(3.8)

+ (.014)(5.0)+

.38] (2.0)(1)=

.93 Failures/106

Hours

GaAs MMIC

A MA4GM212

Single Pole Double Throw Switch, DC -12 GHz, 4 transistors, 4 inductors, 8 resistors, maximum Input PD = 30 ~, 16 pin hermetio flatpack, maxirrum TCH = 14WC m a

ground benign environment. rne part has been manufactured for 1 year and is screened to Paragraph 1.2.1 of MIL-STD-883, Class B equivalent soreen. Seotion 5.4

c1

=

4.5

Section 5.4, MMIC Table, 4 Active Elements (See Footnote to

.061

Tabie) Section 5.8, TJ = TCH = 145°C

3.0

Section

.0047

Section 5.9

%E

=

.50

Section 5.10

XL

=

1.5

Section 5.10

7FQ

-

2.0

Section 5.10

~=

NOTE:

[(4.5)( .061) (3.o) + (.0047)(.5)]

UrhOwn

(1.5)(2.0)

Application

= 2.5 Failures/106

Hours

The passive elements are assumed to contribute negligibly to the overall device failure rate.

Example 4: Given:

5.4,

Hybrid

A linear muttichip hybrid driver in a hermetically sealed Kovar package. The substrate is aiumina there are two thi@ film dielectric layers. The die and substrate attach materials are conductive epoxy and soider, respectively. The application environment is navai unsheltered, 65°C case temperature and the device has been in production for over two years. The device is and

5-21

MIL-HDBK-217F

5.13

MICROCJRCUJTS,

EXAMPLES

screened to MIL-STD-883, Method 5008, in accmkwxe The hybrid contahw the followhg components: Active Components:

Passive Components:

LMl 06 Bipolar Co~rator-er Die (13 Transistors) LM741A Bipolar Operational Arnpliir Die (24 Transistor)

112222 17

S NPN Transistor Si PNP Tmnsistor Si General Purpose Diodes -

Cerwlb c~ Capacitors Thick FItm Resistors + -~E)

1.

with Table Vlll, Class B requirements.

%F ~

~

Sectbn

5.5

Estimate Active Device Junction Terrperatures If limited informationis available on the specific hybtid materials and construction characteristics the defautt case-to-junction temperature rises shown in the introduction to Section 5.12 can be used. When detailed information becmmes available the following Section 5.12 procedure shoukf be used to determine the junction-to-case (tlJc) thermal resistance and TJ vatues for each component.

,,c

=

w A

(Equatbn

1)

~ ()()

Li

Layer

Ki

Fgure 5-1 Feature

in2 OC/W Silicon Chip Conductive

Epoxy

A

.0045

B

.023

Two Dielectric Layers

c

Alumina Substrate

D

.039

Solder Substrate Attachment

E

.0023

Kovar Case

F

A

=

TJ =

5-22

(2)(.0045)

=

Die Area= [ .00278 (No. Die Active Wire Terminals) + .0417J2 Tc + OJC ‘D

(Equation 3)

.009

(Equation 2)

—

MIL-HDBK-217F

5.13

LM 106 No. of Pins

LM741A 14

8 I

I

Si NPN

s

3

3

PNP

.33

.35

.6

.6

Area of Chpjin.2)

.0041

.0065

.0025

.0025

(w

‘J (~)

2.

lSi

Diode’

EXAMPLES

Source Vendor Spec. Sheet

2

I

Power Dissipation, pD (W)

e~

MICROCIRCUITS,

II

.42

CircaJitAnalysis

.0022

Ey.

2 Above

30.8

19.4

50.3

50.3

56.3

Equ. 1 Above

75

72

95

95

89

Ew.

3 Above

Calculate Failure Rates for Each Corrqmnent: A)

LM106 DM, 13 Transistors (from Vendor Spec. Sheet)

~=[c,q+c~Yc~l~Qq Because ‘P

Section 5.1

C2 = O;

=

Cl XT

=

(.01)(3.8)(1)(1)

~Q

XL

~T:

= .038 Failures/106

LM741 Die, 23 Transistors.

B)

$

=

5.8;

s-h

~Q,

ZL

Default tO 1.0

Hours

Use Same Procedure as Above.

Cl XT Z* XL = (.01)(3.1)(1)(1)

= .031 Failures/106

Hours

c) Silicon NPhl Transistor, Rated Power= 5W (From Vendor Spec. Sheet), Vc#VCEO

= .6,

Linear Application ~

D)

s8CtiOn 6.3; ZQ, ~E Defautt to 1.0

= =

%“PA’R%KQ’E

=

.0023 Failures/l 06 Hours

(.00074)(3.9)(1

.5)(1 .8)(.29) (l)(1)

Silicon PNP Transistor, Same as C. .0023 Failures/106

E)

Hours

Silicon General Purpose Diode (Anabg), Construction.

Vottage Stress=

%’T%~nQ% (.0038)(6.3)(.29)(1)(1)(1)

60%, Metallurgically Bonded

Section 6.1; nQ, XE Default to 1.0

.0069 Failures/l 06 Hours

5-23

I

,.

1

.

I

.

.. . .

.

MIL-HDBK-217F [

5.13

MICROCIRCUITS,

.

EXAMPLES

F) Ceramic ChipCapacitor, Voltage Stress= 50%., ‘A “ ‘CASE for the Hybrid, 1340 pF, 125°C Rated

Tenp

I

%

G)

= = =

Section 10.1 1; xQ, fiE Default to 1.0

%%V%)’E (.0028)(1.4)(1)(1) .0039 Faitures/106

Hours

Thiok Film Resistors, per kwtructbns in Section 5.5, the contribution of these devices is considered insiinifiint relative to the overall hybrid failure rate and they maybe ignored.

[XbJc~c](l+2@ItF~q 6.0

Section 5.10

5.8

Section 5.5

1

Section 5.10

1

Section

[ (1)(.038)+

(1)(.031)+

+ (2)(.0069)

+ (2)(.0039)

1.3 Failures/l

5-24

06 Hours

(2) (.0023)+

5.10

(2) (.0023)

](1 + .2(6.0))

(5.8) (1)(1)

f ... .

.

.

. . . . . ..

.

.

. .

...

. .

.. ..— .-

..!.

MIL-HDBK-217F

6.0

DISCRETE

SEMICONDUCTORS,

INTRODUCTION

The semiconductor tmnsistor, dbde and opto-electronic devke sections present the faWe rates on cmstwtbn. An mafytbd -I of the talbre rate is also presented for each the basis ofdevketypeand devkes require different failure rate devke category. The various types of dkcrete semkmductor models that vary to some degree. The models apply to single devices unless otherwise noted. For mh**v-rn as@k_t~~ti h~ti5.5*Mb Md. The applicable MIL specification for transistors, and optoelectronk quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500. The t~p9mtWt3

faCtOr (%T) is based on the devke

jumtbn

devices is MIL-S-19500.

temperature.

Junctbn

The

temperature

should be oomputed based on worse case power (or maxhmm power c!ksipatbn) and the device junction to ease thermal resktanoe. Determinatbn of junction temperatures is explained in Section 6.14. I I

I

Refererwe section.

28 should be consulted for further detailed information on the mode!s appearing

in this

6-1

MIL-HDBK-217F I

DIODES,

6.1

LOW

—

FREQUENCY

SPECIFICATION MlL-S-l 9500

DESCRIPTION @ Frecpxmqr D-s: General Putpse Analog, Switch~ Fast Rewvery, f%wer RecWer, Tmsient S~r, Current Regulator, Vol@e Regulator, Voltage Reference

Lp =

Failures/l

&##czQzE

OG

Base Failure Rate - & Diode Type/Appiicatbn

Temperature

“

General PuqxM Analog switching Power Redfiir, Fast Recovery Power Rectifier/Schottky Power Diode Power Rectifier with HigiI Voltage Stacks Transient Suppressor/Vanstor Current Reguiator Voltage Regulator and Voltage Reference (Avaianche and Zener)

.0038 .0010 .069 .0030 .0050/ Junction .0013 .0034 .0020 I i

(General Purpose Analog, Switching, Fast Recovery, Poul r Rectifier, TI dent Su-pgm isor) XT TJ ~C) XT TJ (’C)

XT =

TJ -

6-2

1.0 1.2 1.4 1.6 1.9 2.2 2.6 3.0 3.4 3.9 4.4 5.0 5.7 6.4 7.2 8.0

((

exp -3091

105 110 115 120 125 130 135 140 145 150 155 160 165 170 175

9.0 10 11 12 14 15 16 18 20 21 23 25 28 30 32

1 1 TJ + 273 -Z&

JunctionTemperature (“C)

))

Factor - q

(VOitag. Regulator, Voitqo Rdormce, h cun’UWRncddYW) —.---- . ... . -~---. # %T TJ (“C) ‘J (’=)

~

Terrperature Factor - XT

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100

Hours

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100

1.0 1.1 1.2 1.4 1.5 1.6 1.8 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7

%T =

exp

-1925 ((

TJ

.

105 110 115 120 125 130 135 140 145 150 155 160 165 170 175

1 TJ +273-=

JunctionTemperature (oC)

v

3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7

1 ))

.,

+.

MIL-HDBK-217F

DIODES,

6.1

7CS

I

Transient Suppressor, Voltage Regulator, Voltage Reference, Current Regulator

Quality

tcQ

JANTXV

0.7

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

1.0

All Others: v~ s .30

0.054

.3 c v~ s .40

0.11

.4< Vs s .50

0.19

.5
0.29

.6< Vs s .70

0.42

.7< V~ s .80

0.58

.8< V~ s .90

0.77

.9
1.0

oo

Environment Factor - ZE Environment

For All Except Transient Suppressor, Voltage Regulator, Voltage Reference, or Current Regulator 7CS=

FREQUENCY

Quality Factor - X(

Electrical Stress Factor - ZS Stress

LOW

.054

~s = v~2.43

(Vs

s .3)

(.3 < v+

1)

Voltage Applied ~~ = Voltage Stress Ratio = Voltage Rated Voltage is Diode Reverse Voltage

7tE

GB

1.0

GF

6.0

%

9.0

N~

9.0

Nu

19

‘Ic

13

‘IF

29

*UC

20

‘UF

43

‘RW

24

SF

.50

MF

14

ML

32

CL

320

Contact Construction Factor - xc Contact Construction

I

Metallurgically Bonded

I@ 1.O

I Non-Metallurgically Bonded and Spring Loaded Contacts

I

2.0

6-3

MIL-I+DBK-217F

6.2

HIGH FREQUENCY

DIODES,

(MICROWAVE,

SPECIFICATION MlL-S-l 9500

RF)

DESCRIPTION Si IMPA7T; Buk Effect, Gunn; Tunnel, Back; Mixer, Detector, PIN, Schottky; Varactor, Step Recovery

Failures/l 06 Hours Tenqxmtum

Base Failure Rate - ~ Dbde Type

h TJ

Si lMPAIT (s 35 GHz) Gunn/Bulk Effect Tunnel and Bd (including Mixers, Detectors) PIN Schottky Barrier (including Detectors) and Point Contact (200 MHzs Frequenqs 35 GHz) Vamctor and Step Recovery

.22 .18 .0023 .0081 .027 .0’025

Temperature Factor - q TJ (“C) 25 30 35 40 45 50 55 60 65 70

75 80 85 90 1:

XT =

(All Types XT

Excq)t

IMPA7T) TJ (oC)

1.0 1.1 1.3 1.4 1.6 1.7 1.9

105 110 115 120 125 130 135

4.4 4.8 5.1 5.5 5.9 6.3 6.7

2.1 2.3

140 145

7.1 7.6

2.5 2.8 3.0

150 155 160

8.0 8.5

3.3 3.5 3.8

165 170 175

4.1

exp -2100

1 TJ +273-~

(( TJ =

6-4

9.0 9.5 10 11

JunctionTemperature (“C)

1 ))

Factor- %T

~) 1.0 1.3 1.8 2.3 3.0 3.9 5.0 6.4 8.1

25 30 35 40 45 50 55 60 65 70 75 80 85

16 19

z 100

24 29 35

‘T TJ

105 110 115 120 125 130 135 140 145 150 155 160 165 170 175

10 13

= =

42 50

E

84 99 120 140 160 180 210 250 280 320 370

1

((

exp -5260

1

TJ + 273 -Zz ))

JunctionTemperature (“C)

Application

Factor - fiA

Diodes Application Varactor, Voltage Control

I

~A .50

Varactor, Mu?tip!ier

2.5

All Other Diodes

1.0

,,.

.- .-.

,.

.

MI-HDBK-217F

6.2

Power

DIODES,

HIGH

FREQUENCY

(MICROWAVE,

RF)

Quality Factor - ~ (Scha ky)

Rating Factor - XR

Rated Power, Pr (Watts) Quaiity’

%

PIN Diodes

p~ < 10

JANTXV

.50

10 < Pr s IOO
100

1.3

Sl~

1000
2.0

S3000

All Other Diodes

JANTX

1.0

JAN

1.8

Lower

2.5

2.4

1.0

All Other Diodes

Pthl Diodes

Iqq = .326 k(Pr) -.25

Plastic

●

For high frequency part classes notspecified to

MlL-S-l 9500 equipmentqualityclasses are defined ae devices meeting ths Same requirementsas MlL-S-l 9500.

XR = 1 .0

Environment Factor - z=

Quaiity Factor - nQ

Environment

(All Ty pas Except Scl

Quality”

I

~E

1.0

t

GF

2.0

I

%

5.0

Ns

4.0

GB

JANTXV

●

.50

.50

JANTX

1.0

JAN

5.0

Nu

11

Lower

25

Ac

4.0

Plastic

50

‘IF

5.0

*UC

7.0

For high frequency part classes not spedfied to Ml L-S-l 9500 equipmentqualhyclassesare defined as devbes meeting the same raqulrementsas MlL-S-l 9500.

..

‘UF

12

‘RW

16

SF MF

.50 9.0

ML

24

CL

250

6-5

MIL-HDBK-217F ● ✎ ✎

6.3

TRANSISTORS,

LOW

FREQUENCY,

BIPOLAR

—

DESCRIPTION NPN (Frequency< PNP (Frequency<

SPECIFICATION MIL-S-19500

Ap =

‘AXR%ZQXE

%?

Failures/l

06 I-loufs Application Factor - %A

Base Failure Rate - ~

I

Type

I

NPN and PNP

I

Application

h .00074

I

TJ

(*)

XT

25 30 35 40 45 50

1.0 1.1 1.3 1.4 1.6 1.7

55 60

;::

% 75 80

5:: 2.8 3.0

E 95 100

::: 3.9 4.2

200 MHz) 200 MHz)

T J (“C) -

I

1.5

Linear Ampliiicatiorl

.70

Switching

%T

105 110 115 120 125

4.5 4.8 5.2 5.6 5.9

130 135 140 145 150 155 160 165 170 175

6.3 6.8 7.2 7.7 8.1 8.6 9.1 9.7 10 11

Power Rating Factor - ZR .. Rated Power (Pr, W~S)

exp -2114

1 1 TJ + 273 -=

(( TJ =

Junclbn Temperature (“C)

.43

Pr = .5

.77

Pr =1.0

1.0

Pr = 5.0

1.8

Pr = 10.0

2.3

Pr = 50.0

4.3

P~ = 100.0

5.5

10 I

))

Rated Powers .lW

%-. * ~ - (Pr).37

Rated Power >.1 W

6-6

I

?tR

Pr~ .1

Pr -500.0 XT =

%A

.l@

I

-

.

MIL-HDBK-217F

6.3

Voltage

I

o
VCEO

-

~~

#.3 @.5

BIPOLAR

Environment

%E 1.0

GF

6.0

.21

%

9.0 9.0

.16

.4
FREQUENCY,

GB .11

.3
LOW

Erwironment Factor - ~F

Stress Factor - YCS

Applied vCE/Rabd

TRANSISTORS,

.5c

V~S.6

.29

Ns

.6<

V#.7

.39

N“

19

AC

13

‘IF

29

AM

20

‘UF

43

‘RW

24

.7
@.0

.8<

V#.9

.9<

v~ s 1.0

.54 .73 1.0 —~~

%

-

,045 exp (3.1(vS))

v~

.

Applied VCE / Rated VGEO

VCE

=

Voltage, Collector to Emitter

‘CEO

-

Voltage, Colleotor to Emitter, Base

(o
SF

Open

.50

MF

14

ML

32

CL

320

Quality Factor - ZQ Quality JANTXV

I

7c~ .70

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

6-7

MIL-HDBK-217F

6.4

TRANSISTORS,

LOW

FREQUENCY,

SPECIFICATION MIL-S-19500

SI

FET

DESCRIPTl ON N-Channel and P-Channel Si FET (Frequencys

400 MHz)

Ap = kb7cT7cA7tQ7cE Failures/l 06 Hours

Application Factor - ~A

Base Failure Rate - ~ ●

Transistor Type

I

Application (Pr, Rated Output Power)

%

I :::5I

MOSFET JFET

Linear Amplifkxtion (Pr < W) small S@rlal Switching

.70

Temperature Factor - n~ T ~ (“C)

TJ (“C)

*T

25 E 40 45 50 55 60 65 70 75 80 85 90 95 100

1.0

105

1.1 1.2

110 115 120 125 130 135 140 145 150 155 160 165 170 175

1.4 1.5 1.6 ;:: 2.1 2.3 2.5 2.7 u 3.4 3.7

Power FETs (Non-linear, Pr z

XT

::; 4.5 4.8 5.1 5.4 5.7 6,0 6.4 6.7 7.1 7.5 7.9 8.3 8.7

2<

nT

=

exp

- 1925 ((

TJ

=

Junction

1 TJ + 273

2.0

5
4.0

50 s Pr < 250W

8.0 10

Environment Factor - x=

I

Environment

I

xc

GB

1.0

GF

6.0

GM

9.0

NS

9.0

1 -izii ))

Temperature

Pr<5W

Pr > 25OW

A

*

2W)

(“C)

1 Quality Factor - ~ Ouality

7CQ

JANTXV

.70

Nu

19

Alc

13

‘IF

29

*UC

20

*UF

43 24

JANTX

1.0

*RW

JAN

2.4

SF

Lower

5.5

MF

14

Plastic

8.0

ML

32

CL

320

.50

b-U

I

1=-IO

I

=1

I

MIL-HDBK-217F

6.5

Lp = kb7cT7TQ7cEFailures/l

OG Hours

Base Failure Rate - ~

Quality Factor - ~

All Unijuntilon

.0083 I

~T

100

nT

TJ

TJ (“C)

1.0 1,1 1.3 1.5 1.7 1.9 2.1 2.4 2.7 3.0 3.3 3.7 4.0 4.4 4.9 5.3

=

=

exp

-2483 ((

Junction

Temperature

%Q

JANTXV

.70

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

XT

105 110 115 120 125 130 135 140 145 150 155 160 165 170 175

1 TJ + 273

Quality

I

Temperature Factor - XT

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95

UNLIUNCTION

DESCRIPTION Unijunction Transistors

SPECIFICATION MIL-S-19500

T ~ (“C)

TRANSISTORS,

5.8 6.4 6.9 7.5 8.1 8.8 9.5 10 11 12 13 13 14 15 16

Environment Factor - XE — Environment

%E

GB

1.0

GF

6.0

%/l

9.0 9.0

1 -m

Nu

19

AC

13

‘IF

29

‘Uc

20

*UF

43

*RW

24

))

(°C)

SF

.50

MF I

ML

32

CL

L

6-9

I

I

<1

I

4

MIL-HDBK-217F

TRANSISTORS,

6.6

LOW

NOISE,

HIGH

FREQUENCY,

BIPOLAR

DESCRIPTION Bipolar, Micmvave RF Transistor (F~ency >200 MHz, Power< lW)

SPECIFICATION MIL-S-19500

kp =

‘b~z#&QKE

Failures/l 06 Hours

Applkatlon Note: The model applies to a single die (for multiple die use the hybrid model). The model does apply to ganged transistors on a single die. Power Rating Factor - Xn .. Base Failure Rate - & R~6d ~ (Pr, W~S) %R

I 1

I

I

— I

,18

All Types I

I

Temperature Factor - q TJ (“C)

XT

TJ W)

-

XT

25

1.0

105

30 35

1.1 1.3

110

4.8

40 45 50 55

;:; 1.7

115 120 125 130

5.2 5.6 5.9 6.3 6.8

60 65 70

;:: 2.3 2.5

:Z 145 150

75 80 85

2.8 3.0 3.3 3.6 3.9 4.2

155 160 165 170 175

E 100

XT =

exp -2114

7KR..43

P~ S.lw

~

Pr >.lW

= (Pr )“37

I

7.2 7.7

Voltage Applied VCE/R~ed o
1 TJ +273-=

JunctionTemperature (oC)

1 ))

.3
I

VCEO

% .11

.4

.16

#.5

.21

.5<

V#.6

.29

.6<

V8S.7

.39

.7<

VSS .8

.54

.73

.8
1.0

v~ s 1.0

%

-

.045 exp (3.1(vS))

v~

-

Applied VCE / Rated VC~

v=

-

Vottage, Collector to Emitter

‘CEO

=

Voltage, Collector to Emitter, Base Open

I

Stress Factor - x~

#.3

.4
((

TJ =

4.5

0.1 8.6 9.1 9.7 10 11

.43 .55 .64 .71 .77 .83 .88 .92 .96

Pr < .1 .l
I

(o< v~ s 1.0)

. ..

,,

!.,

MIL-HDBK-217F

6.6

TRANSISTORS,

LOW

NOISE,

HIGH

FREQUENCY,

BIPOLAR

Environment Factor - ~F

Quality Factor - ~ 7tQ

Quality

.50

JANTXV

Environment

~E

GB

1.0

GF

2.0

JANTX

1.0 GM

5.0

JAN

2.0

Ns

4.0

Lower

5.0

Nu

NOTE: For these devices, JANIXV quatii class must inciude IR Scan for die attach and scraan for barrier

19

Alc

4.0

%F

5.0

‘Uc

7.0

layer pinhotes on gold metallized devices.

‘UF

12

‘RW

16 .50

SF MF

9.0

ML

24

CL

250

6-11

I

MIL-HDBK-217F

6.7

TRANSISTORS,

HIGH

POWER,

HIGH

SPECIFICATION M! L-S-19500

BIPOLAR

DESCRIPTION Power, Mkrowave, RF Bipolar Transistors (Average Power 21 W) %=

%%XAXM%ZE

‘ail”res/lo’‘O”’s

Base Failure Rate - ~

. I

FREQUENCY,

Output Power (Watts) 50 100 .050 .067 .060 .080 .086 .11 .12 .16 .17 .23 .25

Frequency

1.0

(GHz)

.038 .046 .065 .093 .13 .19

s 0.5 ; 3 4 5

I

lb

5.0 .039 .047 .067 .095 .14 ,19

10 .040 .048 .069 .098 .14 .20

F=

.032 exp(.354(F) + .00558(P))

x

300 .20 .24 .35

200 .12 .14 .20 .28

Frequency (GHz)

400 .36 .42

p

=

500 .62 .74

600 1.1 1.3

OUtp@POwer W)

I

NOTE: Output power refers to the power level for the overall packaged device and not to indwidual transistors within the package (if more than one transistor is ganged together). The output power represents the power output from the active device and should not account for any duty cycle in pulsed applications. Duty cycle iS accounted for when determining ‘A.

Temperature Factor - XT

Temperature

(Gnlri Mdalli7atinn\ \ -Vs (VCE/BVCE@ !.-

TJ (“C)

.

.

s .40 .10 .12 ,15 .18 .21 .25 .29 .34 .40 .45 .52

sl 00 110 120 130 140 150 160 170 180 190 200

‘T = .1 exp -2903 (( (VS < .40)

‘T

.

.

.

.

. .

..-

.

. .

.

/Aliiminllm ,,, ,”,

.

.50

.20 .25 .30 .36 .43 .50 .59 .68 .79 .91 1.0

.30 .37 .45 .54 .64 .75 .88 1.0

- z (VS - .35) eXP -2903

.55 .40 .49 .59 .71 .85 1.0 1.2 1.4 1.6 1.8 2.1

1.2 1.4 1.6

=

.

..--.,,--

.,

W..

s .40

.45

.50

.55

Sloo 110 120 130 140 150 160 170 180 190 200

.38 .57 .84 1.2 1.7 2.4 3.3 4.4

.75 1.1 1.7 2.4 3.4 4.7 6.5 8.8 12 15

1.1 1.7 2.5 3.6 5.1 7.1 9.7 13 18 23 30

1.5 2.3 3.3 4.8 6.8 9.5 13 18

)) TJ ~ 273

?:;

1 TJ +273

-5794

$: 40 1

-

=

nT = ?.55 (VS - .35) exp

1 -m

=

VCE / BVCES

VCE

.

Operating Voftage (volts)

BVCES

=

Collector-Emitter Breakdown Voftage with Base Shorted to Emitter (Volts)

TJ

=

Peak Junction Temperature (“C)

-5794

1 1 TJ + 273 - ~

(( (.4 < Vs s .55)

‘ ))

v~

‘ ))

(( (VS s .40)

‘

(( (.4 < v~ s .55)

6-12

.,

TJ (~)

XT = .38exp

1 -

.F”,

Factor - nT Matalli7atinn\

Vs (VCE/BVCES)

.45

1 TJ +273

,?,

1

, ))

v=

-

VCE / BVCES

VCE

=

Operating Voltage (Votts)

BVCES

=

Collector-Emitter Breakdown Voltage with Base Shorted to Emitter (Votts)

TJ

=

Peak Junction Temperature (“C)

I

I -+

MIL-HDBK-217F

6.7

TRANSISTORS,

HIGH

POWER,

HIGH

ZQ

Quality

Duty Factor N/A

.50

JANTXV .46

s 1’%

Pulsed

5!% 1 0%+40 15% 20% 25% 2 30%

.70 1.0 1.3 1.6

JANTX

1.0

JAN

2.0

1.9

Lower

5.0

2.2 N07E: For these devices, JANTXV qualityclass must IncludeIR Scan for die attach and screenfor

7tA

=

7.6, CW

n~

=

.06 (Duty Factor

barrier layer pinholes on gold metaltized devices. 0/0)

+

.40,

Pulsed

Environment

Matching

BIPOLAR

Quality Factor - ~ —

Application Factor - ~A Application

FREQUENCY,

Network

Factor - fiM

Matching

~M

Input and Output

1.0

Input

2.0

None

4.0

Factor - zcb

Environment

~E

GB

1.0

GF

2.0

GM

5.0

Ns

4.0 11

Nu

4.0

‘Ic

5.0

‘IF

7.0

*UC

12

‘UF

16

*RW

.50

SF

9.0

MF ML

24

CL

250

6-13

m-a

-l....

_._.

—.

-“

—.

--

--

--

--

m

AAM”

.-

.-.

.

.

.

.

.

I

MIL4-IDBK-217F . TRANSISTORS,

6.8

HIGH

FREQUENCY,

GaA,

SPECIFICATION MIL-S-19500

FET DESCRIPTION Galls Low Noke, Driver and Power FETs (2 lGHz)

Base FaihJre Rate - ~

<.1

%

“

.054 .083 .13 .20 .30 .46 .71

1< F<1o,

%= F-

Frequency (GHz)

.13 .20 .30 .47 .72 1.1

::

.052 .0093 exp(.429(F)

.084

.&6 .10 .16 .24 .37

+ .486(P))

4sFs1o, p.

.14 .21 .32 .50 .76 1.2 1.8

6

4

2

-.

--

.052 .052 .052 .052 .052 .052 .052 .052

1 4 5 6 7 0 9 10

Average Output Power (Watts) 1 .5

.1

.36 .56 .85

.96 1.5 2.3 3.5

;::

P<.1 .ls

Ps6

Average Output Power (Watts)

The average output power represents the power output from the active device and should not account for any duty cycle in pulsed applications.

Temperature Factor - m

Tc (=)

h

1.6 2.1 $:; 4.0 4.9 5.9 7.2 8.7 10 12 15

%T

24 28 33 38 44 50 58 66

M

115 120 125 130 135 140 145 150 155 160 165 170 175

E 97

110 120 14’0 150

;7

-

TC =

U-14

TC (C) 1.0 1.3

25 30 35 40 45 50 55 60 65 70 7s 80 85 90 95 100

Application Factor - XA

((

‘Xp ‘4485

&3-L

Channel Temperature (“C)

298 ))

Application (Ps 6W) All Low Power and Pulsed

I

~A 1 4

P = Average Output Power (Watts)

MIL-HDBK-217F

6.8

Matching

Network

Factor

HIGH

~M

Environment %3

Input and Output

1.0

Input Only

2.0

None

4.0

~Q

.50

1.0

%

5.0

NS

4.0

%

Qualiiy Factor- ICQ

~E

[

2.0

%c

JANTXV

GaAs

GF

N“

Quality

FREQUENCY,

Environment Factor - xcL

- ~M

Matching

TRANSISTORS,

*UC *UF ‘RW

JANTX

1.0

SF

JAN

2.0

MF

Lower

5.0

11 4.0 5.0 7.0 12 16 .50 7.5

ML

24

CL

250

FET

MIL-HDBK-217F

6.9

TRANSISTORS,

HIGH

FREQUENCY,

SPECIFICATION MIL-S-19500

Si

FET DESCRIPTION Si FETs (Avg. Power< 300 mW, Freq. >400 MHz)

~

= &Tz@E

Failures/l OGHours

Base Failure Rate - ~

Quality Factor - ~

Transistor Type

I I

A~

MOSFET

Quality

.060

JANTXV

.023

JANTX

1.0

JAN

2.0

Lower

5.0

.50

I

I

JFET

Temperature Factor - m TJ (“C)

XT

1.0 1.1

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100

‘T TJ

1.2 1.4 1.5 1.6 1.8 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7

= =

exp

((

- 1925

7tT

105 110 115 120 125 130 135 140 145 150 155 160 165 170 175

1 TJ + 273

Junction Temperature (“C)

3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7

1

Environment

))

xc

I

GB

1.0

GF

2.0

GM

5.0

N~

4.0

N“

11

AIC

4.0

‘IF

5.0

‘Uc

-E

Factor - ~= L

Environment

7.0

*UF

12

‘RW

16 .50

SF MF

6-16

9.0

ML

24

CL

250

I

MIL-HDBK-217F

6.10

THYRISTORS

AND

SCRS

DESCRIPTION Thyristors SCRS, Triacs

SPECIFICATION MIL-S-19500

Failures/l 06 Hours Base Failure Rate - ~ I

I

Device Type

Current Lb

I

All Types

I

Rated Forward Current ‘ffms (Amps)

I

.05 ,10 .50 1.0 5.0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 175

Temperature Factor - q TJ (%)

TJ(%) 1.0 1.2 1.4 1.6 1.9 2.2 2.6 3.0

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95

::: 4.4

5.0 5.7 6.4 7.2 8.0

100

TJ

=

=

Factor

- ~R

.0022 I

~T

Rating

exp

((

-3082

8.9 9.9 11 12 13 15 16 la 19 21 23 25 27 30 32

105 110 115 120 125 130 135 140 145 150 155 160 165 170 175

1 TJ + 273

Junction Temperature (“C)

1 -m

m

=

+rms

=

))

.30 .40 .76 1.0 1.9 2.5 3.3 3.9 4.4 4.8 5.1 5.5 5.8 6.0 6.3 6.6 6.8 7.0 7.2 7.4 7.6 7.8 7,9

($rmJ”40 RMS Rated ForwardCurrent (Amps)

6-17

MIL-HDBK-217F .

. .

THYRISTOf?S

6.10

AND

—

SCRS

Voltage Stress Factor - XC w

Environment Factor - XC L

Environment

V~ (Blocking Voltage Applied/ BlockingVottage Rated) v~ s

Xs

.30

.10

%E

%

1.0

GF

6.0

.3
#.4

.18

%

9.0

.4
#.5

.27

NS

9.0

.5<

V#.6

.38

.6<

V#.7

.51

.7<

[email protected]

.8<

V~S.9

NU

19

.65

Alc

13

.82

‘IF

29

1.0

.9 < v~ s 1.0

7CSD.1O

(VS s 0.3)

‘Uc

20

‘UF

43

%J

24 .50

SF ~s = (Vs)

1.9

(VS> 0.3)

MF

14

ML

32

cL Quality Factor - ZQ Quality

!

ZQ

JANTXV

0.7

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

6-18

320

. .

MIL-HD6K-217F

6.11

OPTOELECTRONICS,

DETECTORS,

DESCRIPTION Photodetectors,

SPECIFICATION MIL-S-19500

ISOLATORS,

Opto-isolators,

EMITTERS

Emitters

Failures/l 06 Hours Quality Factor - ZQ

Base Faiture Rate - &

OptoelectfonkType

-

%

Photodetectors Photo-Transistor

.0055 .0040

Photo-Diode Opto-isolators Photodbde Output, Si@e Device

.013

Photodarlington Output, Single Device

,013

Light Sensitive Resistor, Single Devioe

.0064

Photodiode Output, Dual Device

.0033

Phototransistor Output, Dual Device

.017

Photodarlington Output, Dual Device

.017

Lght Sensitive Resistor, Dual Device

.0086

Emitters Infrared Light Emitting Diode (IRLD)

.0013 .00023

LightEmittingDiode (LED) Temperature Factor - ~T XT 1.0 1.2 1.4 1.6 1.8 2.1 2.4 2.7 3.0 3.4

25 30 35 40 45 50 55 60 65 70

JAW

.70

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

.0025

Photot:aosistor Output, Single Device

TJ (“C)

YCQ

Quality

Environment Factor - n Environment GB

1.0

GF

2.0

GM

8.0

Ns

5.0

N

75 80 85 90 95 100 105 110 115

-2790

1

TJ

Junction Temperature (“C)

3.8 4.3 4.8 5.3 5.9 6.6 7.3 8.0 8.8

4.0

‘IF

6.0

‘Uc

6.0

‘UF

8.0

‘RW

.50

SF MF

c1

1

17

9,0 24

; I

450

<

TJ +273-~

(( =

12

‘Ic

ML exp

I

XT

TJ (“C)

ttT =

~E

))

6-19

I

MIL-HDBK-217F I

OPTOELECTRONICS,

6.12

ALPHANUMERIC

SPECIFICATION MIL-S-19500

—

DISPLAYS

DESCRIPTION ~numedc Display

%

“

&T’QzE

.

Failures/l 06 Hours Tenqwature

Base FaihJre Rate - & Number

%

d

“+)

Charactws 1 1 whgk

Chip

2 2

Chip

W/b@C

.00043

.00026

.00047 .00066

.00030 X)0043 .00047 .00060 .00064 .00077 .00081 .00094 .0011 .0013 .0015 .0016 .0018 .0020 .0021 .0023 .0025 .0026

.00090

3 3 Wlhxjo chip 4 4 w/Logic Chip 5 6 7 8 9 10

.0013 .0013 .0017 .0018 .0022 .0026 .0030 .0034 .0039 .0043 .0047 .0052 .0056 .0060 .0065

:; 13 14 15

TJ (“C)

~T

25 30 35 40 45 50 55 60 65 70

1.0 1.2 1.4 1.6 1.8 2.1 2.4 2.7 3.0 3.4

%T =

TJ

=

exp

((

-2790

Factor - q TJ (%)

%T

75 80 85 90 95 100 105 110 115

3.8 4.3 4.8 5.3 5.9 6.6 7.3 8.0 8.8

1

TJ + 273

1 -ZE ))

Junction Temperature ~C)

Environment Factor - xc ~ - .00043(C)+ ~.

.00009+

~C,

Environment

for Segment Displays

.00017(C)+

2.0

c=

Number of CharaAers

%-

.000043 for Displays with a Logic Chip

%

8.0

0.0 for Displays without Imgic Chip

Ns

5.0

-

NOTE: The numbar of characters in a display is the number of characters mntained in a _ sealed package. For example, a 4 character display comprising 4 separately packaged single characters mounted together would be tine character dispiays,

not 1-four character display. Quality Factor - ~ I

1.0

~C, Diode Array Displays

12

Nu

AC

4.0

‘IF

6.0

%c

6.0

*UF

8.0 17

Quality

lcQ

JANTXV

0.7

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

.50 MF

9.0 24

ML

450

Ci

6-20

----

------

--------

—

MIL-HDBK-217F

6.13

OPTOELECTRONICS,

LASER

DIODE

DESCRIPTION laser Diodes with Optical Flux Densities

SPECIFICATION MIL-S-19500

<3 MW/cr#

Cufrmt <25 ~

amt Fofward

Failures/l 06 Hours Forward Cument Factor, I q

Forward Peak Current (Anps)

Temperature Factor - XT TJ (“C) 1.0

25 30 35 40 45 50 55 60 65 70 75

TJ

=

=

0.17 0.21 0.62 1.0 1.6 2.1 2.6 3.0 4.8 6.3 7.7 8.9

1.3

1.7 2.1 2.7 3.3 4.1 5.1 6.3 7.7 9.3

q

-

(1)”68

I

-

Fonnmrd Peak Currant (Amps), I $25

NOTE: For VariaMa Current Souroes, use the Initial Current Value.

Application

exp

((

-4635

1

TJ + 273

- ~

x~

1 ))

Pulsed

1

JunctionTemperature(“C)

4.4 .32 .45 .55 .63 .71 .77 .84 .89 .95

.1 .2 .3 .4 :: .7 .8 .9

Quality Factor - ~ Quality

Factor %A

Duty Cydo

Application XT

~

.050 .075 .1 .5 1.0 2.0 3.0 4.0 5.0 10 15 20

1-

Hermetic Package

1.0

Nonhermetic with Faoet Coating

1.0

Nonhermetic without Facet Coating

3.3

~A = 4.4, CW %A = ~

Cycle

0-5,f%.i-d

NOTE: A duty cyclaof one in pulsed application represents the maximum amount it can ba driven in a pulsad mode. This is different from wntinuous wave applicationwhich will not withstandpulsed

oparatingIavels on a continuousbasis.

-..

2

-----

--————

——4

I

J

MIL-HDBK-217F .

..

OPTOELECTRONICS,

6.13

Power ~radation

LASER

—

DIODE Environment Factor - fiE

Factor - np

I

Ratio P~P~

%p .50 .53 ,56 .59 .63 .67 .71 .77 .83

0.00 .05 .10 .15 .20 .25 .30 .35 .40 .45

.91 1.0 1.1 1.3 1.4

.50 .55 .60 .65 .70 .75 .80 .85 .90 .95

1.7 2.0 2.5 3.3 5.0 10

~

#

I

I

Environment GB GF

1 2 (1 -&

“PS

~

s .95

Ps =

Rated Optical Power Output (rnW)

Pr

Required Optical Power Output (mW)

=

NOTE: Each laser diode must be replaced when power output falls to Pr for fai lure rate prediction to be valid.

6-22

I

I

ttE 1.0 2.0

GM

8.0

Ns

5.0

Nu Ac ‘IF %c ‘UF ‘RW

12 4.0

6.0 6.0 8.0 17

.50

SF MF ML

lcp =

[

9.0 24

450

9 1

MIL-HDBK-217F

DISCRETE

6.14

Idealty, device case temperatures should be detetined Wl@me~. D8Vb #.IndOn te~-m iS then ~M~ TJ = Tc +

SEMICONDUCTORS,

TJ

DETERMINATION

from a detailed thermal anatysis of the with tb folbwing relationship:

e~p

where: TJ

=

Junction Temperature(%)

TC

=

Case Temperature (~).

tf no thermal analysis exists, the defautt case

temperatures shown in Table ~1 should be assumed. Junction-to-Case Thermal Resistance (“CAN). This parameter should be determhwd from vendor, military specffkation sheets or Table 6-2, whiohever is greater. It may also be estimated by taking the mclpmcal of the reconvnended &wa!lng Ieve!. For examp!e, a devtce derating reconxnendatton of .16 W“ wou!d restAina6K of6.250CAN. lf6wcannot bedetermhwd assurnea O~vabeof 7o”c/w. P=

Device Worse Case Power Diss@ation (W)

The models are not applicable to devices at overstress conditions. If the calculated junction temperature is greater than the maximum rated junction temperature on the MIL slash sheets or the vendor’s specifications, whichever is smaller, then the device is overstressed and these models ARE NOT APPLICABLE.

Table 6-1:

Default

Caee

Temperatures

Environment

I

(Tc)

for All Environments

TC (“C)

I

35 45 50

% Ns

45

Nu

50

AC

60

‘IF

60

‘Uc

75

‘UF

75

*RW SF

60 35

MF

50

ML

60

CL

45

MIL-HDBK-217F

6.14

Table

DISCRETE

6-2:

SEMICONDUCTORS,

Approximate

Juriction-to-Case Devices

Package Type TO-1 TO-3 TO-5 TO-8 TO-9 TO-12 TO-1 8 TO-28 TO-33 TO-39 T041 TO-44 T046 TO-52 TO-53 TO-57 TO-59 TO-60 TO-61 TO-63 To-66 TO-71 TO-72 TO-83 TO-89 TO-92 TO-94 TO-99 TO-126 TO-127 TO-204 TO-204AA

T i

OJC (“w 70 10 70 70 70 70 70 5 70 70 10 70 70 70 5 5 5 5 5 5 10 70 70 5 22 70 5 70 : 10 10

—

DETERMINATION

Thermal

In Varfous

Resistance

(6JC)

for

Semiconductor

Package Sizes”

Package Type TO-205AD TO-205AF TO-220 Do-5 D07 Do-9 DO-13 DO-14 Do-29 Do-35 DO-41 DO-45 DO-204MB DO-205AB PA-42A,B PD-36C PD-50 PD-77 PD-180 PD-319 PD-262 PD-975 PD-280 PD-216 PT-2G PT-6B PH-13 PH-16 PH-56 PY-58 PY-373

Ok (%A#) 70 70 5 5 5 10 5 5 10 5 10 10 10 5 70 5 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70

“When available, estimates must be based on military specification sheet or vendor vaiues, whichever is higher.

6-24

OJC

MIL-HDBK-217F

6.15

DISCRETE

SEMICONDUCTORS,

EXAMPLE

Example Given:

Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25”C, one side onty, and 0.35 W at 25”C, both sides, with TM = 2000C, operating in linear service at 55°C case temperature in a sheltered naval environment. Side one, NPN, operating at 0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30 percent of rated voltage. The device operates at iess than 200 MHz.

Since the device is a bipolar dual transistor operating at low frequency (c200 Miiz), it falls into the Transistor, Low Frequency, Bipoiar Grwp and the appropriate modei is given in %ction 6.3. Since the device is a dual device, it is necessary to compute the faiiure rate of each side separately and sum them OJc k uf’k~wn, OJc = 70%/w ~i~ be a~md. t~e{k. Also, si~ Based on the given information, the following model factors are determined from the appropriate shown in Section 6.3.

tables

.00074 2.2

s@O1, TJ=TC+eJC

2.1

Side 2, TJ = 55+ 70(.05) = 59°C

%55+70(

.1).62°c

1.5 .68

Using equation shown with XR tabie, Pr = .35 W

.21

Side 1, 5070 Voltage Stress

.11

Side 2, 3(I?% Voitage Stress

2.4 9

$

= =

(.00074)(2.2)(1 .011 Faiiures/106

.5)(.68) (.21)(2.4)(9)

+ (.00074)(2.1)(1

.5)(.68) (.1 1)(2.4)(9)

Hours

6-25

MIL-HDBK-217F

TUBES,

7.1

ALL TYPES

EXCEPT

TWT AND

MAGNETRON

DESCRIPTION All Types Except Traveling Wave Tubes and Magnetrons. Includes Receivers, CRT, Thyratron, Crossed Field Amplifier, Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed Klystron, CW Klystron “

I

~

(Includes Tube Type

= kb7cLnE

Both

Transmitting Triode, Peak Pwr. s 200 KW, Avg. Pwr, s 2KW, Freq. g 200 MHz Tetrode & Pentode, Peak Pwr. s 200 KW, Avg. Power 5 2KW, Freq. S 200 KW If any of the above limits exceeded Vidicon Antimony Trisulfide (Sb2S3) Photoconductive Material Silicon Diode Array Photoconductive Material Twystron VA144 VA145E VA145H VA913A Klystron, Pulsed” 4KMP1OOOOLF 8568 L3035 L3250 L3403 SAC42A VA842 Z501OA ZM3038A ●

06 Hours

Base Failure Rate - ~ and Wearout Failures) Rando[ Tube Type Lb

Receiver Tnode, Tetrode, Pentode Power Rectifier Thyratron Crossed Field Amplifier QK681 SFD261 Pulsed Gridded 2041 6952

Failures/l

Klystron, Low Power, (e.a Local Oscillator)

5.0 10 50 260 150 140 390

75 100

250

51 48 850 450 490

230 43 230 66 69 93 100 18 150 190

If the pulsed Klystron of interest is not listed above,

use the Alternate Pulsed Klystron Ab Table on the following page.

Klystron, Continuous Wave* 3K3000LQ 3K50000LF 3K21OOOOLQ 3KM300LA 3KM3000LA 3KM50000PA 3KM50000PA1 3KM50000PA2 4K3CC 4K3SK 4K50000LQ 4KM50LB 4KM50LC 4KM50SJ 4KM50SK 4KM3000LR 4KM50000LCI 4KM50000LR 4KM170000LA 8824 8825 8826 VA800E VA853 VA856B VA888E

●

30

9.0 54 150 64 19

110 120 150 610 29 30 28 15 38 37 140 79 57 15 130 120 280 70 220 65 230

If the CW Klystron of interest is not listed above,

use the Alternate CW Klystron ~ Table on the following page.

MIL-I-IDBK-217F

7.1

TUBES,

ALL

TYPES

EXCEPT

TWT

AND

—

MAGNETRON

Attemate* Base Failure Rate for Pulsed Klystrons - A

Learning

F(GHz)

Zs!&!L

.2

.4

.6

.8

1.0

2.0

.01 .30

16 16 16 17 18 19 21 22 31

16 16 17 17 20 22 25 28 45

16 17 17 18 21 25

16 17 18 18 23 28

16 17 18 19 25 31

16 18 21 22 34 45

;: 25 28 51 75

30

35

40

63

110

34 60

40 75

45 90

75 160

.80 1.0 3.0 5.0 8.0 10 25

4.0

T (years)

I

;: 30 34

F

Operating Frequency in GHz, 0.2s Fs 6

10

2

2.3

>3

q

+2=

T

1.0

=

10(T) -2”’, 1 sT<3

= =

10, TsI 1,T23

=

Numtw of Years since Introduction to Field Use

Peak Output Power in MW, .01 s Ps 25 and

P-

‘L

<1

2.94 (F)(P) + 16

=

6.0

Factor - XI

P s 490 F-295 “See previous page for other Klystron Base Failure Rates.

Environment

Factor - nE

Environment

GB T

Aftemate” Base Failure Rate for CW Klystrons - ~

GM

3K!!!!L 0.1

14

N~ 30 31 32 33 34 35 45 55 70 80

;;; 5.0 8.0 10 30 50 80 100

1.0

GF

31 32 33 34 35 36 46 56 71 81

33 33 34 35 37 38 48 58 73

34 34 35 36 38 39 49 59

38 39 40 41 42 43

47 48 49 50

57 57 58

66 66

Nu

8.0 24

%c

5.0

‘IF

8.0

%c

6.0

‘UF ‘RW

12 40

SF

%“

0.5P + .00046F + 29

P=

Average Output Power in KW, 0.1 s Ps 100 and Ps 8.0(10) 6( F)-1”7

F

=

Operating Frequency in MHz, 300s Fs8000

●See previous page for other Klystron Base Failure Rates.

.20

MF

22

ML

57

CL

1000

MIL-HDBK-217F

7.2

TUBES,

TRAVELING

WAVE

DESCRIPTION Traveling Wave Tubes Xp = &E

Failures/l

06 Hours Environment Factor - XF

Base Failure Rate - & Power (W) 100 500 1000 3000 5000 8000 10000 15000 20000 30000 40000

.1

1

2

Environment

Frequency (G-Hz) 4 6 8 10

11 12 13 16 20 24 16 20 24 11 12 13 12 14 16 20 24 11 172125304465 12 13 14 12 13 15 18 22 26 19 23 20 13 14 16 14~5~62024293551 15 16 18 22 26 32 17 18 20 24 29 35 20 22 24 29 36 43 25 27 30 36 43 53

14

18

29 29 29

42 42 43

61 62 62

32 33

46 49

39 43 52 64

56 62 76 93

68 72 75 83 91 110 140

GB

1.0

GF

3.0

GM Ns

11(1.00002)P

p.

Rated Power in Watts (Peak, if Pulsed), .001< P s 40,000

F

=

(1.l)F

14 6.0

N“

21

%c

10

‘IF ‘Uc

%=

~E

14 11

‘UF

18

‘RW

40 .10

SF MF

22

ML

66

CL

1000

Operating Frequency in GHz, .3s Fs 18.

If the operating frequency is a band, or two different values, use the geometric mean of the end point frequencies when using table.

/-3

MIL-HDBK-217F

7.3

TUBES,

—

MAGNETRON DESCRIPTION Magnetrons, Pulsed and Continuous Wave (CW) 7c@@E

%=%

Failures/l

06 Hours

Base Failure Rate - ~ .1 1.4 1.9 2.2 2.8 3.1 3.5 4.4

Qs!!?!m .01

.05 .1 .3 .5 1 3

Pulsed

.5 4.6 6.3 7.2 9.0 10 11 14

1 7.6 10 12 15 17 19 24

5 24 34 39 48 54 62 77

10 41 56 64 80 89 100 130

20 67 93 110 130 150 170 210

Magnetrons:

I

.73 ~pl.20

%) =

Frequency (GHz) 30 40 50 91 130 110 120 150 180 140 180 210 180 220 260 200 240 290 230 280 330 350 280 410

‘9(F)

F

=

Operating Frequency in GHz,

.1 s Fs 100

P

=

Output Power in MW,

.ol
I

.44

.50 .55 .61

0.4

.66 .72 .78 .83 .89 .94

0.5 0.6 0.7 0.8 0!9 1.0 =

0.44 + 0.56R

R

=

Radiate Hours/Filament

Hours

Factor - mr nc

1

GB

1.0

GF

2.0

GM

4.0

N~

15

Nu

47

*IC

10

‘IF

16

*UC

12

‘UF

23

*RW

80

1.0

nu

90 200 280 320 400 440 510 630

I

Environment 7CU

80 190 260 290 370 410 470 580

A@8

Environment

0.0 0.1 0.2 0.3

70 170 230 270 330 370 420 530

CW Magnetrons (Rated Power < 5 KW):

Utilization Factor - q I Utilization (Radiate Hours/ Filament Hours)

60 150 210 240 300 330 380 470

.50 Construction Construction

Factor - m

u

XC

MF

43

ML

133

c, CW (Rated Power< 5 KW)

1.0

Coaxial Pulsed

1.0

Conventional Pulsed

5.4

/-4

2000

100 220 300 350 430 480 550 680

MIL-HDBK-217F

8.0

LASERS,

INTRODUCTION

. . , i.e., those items The models and failure rates presented in thk section apply to ~ wherein the Iasing action is generated and controlled. In addition to laser peculiar Items, there are other assernbhes used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses, etc.). The failure rates for these parts should be determined with the same procedures as used for other electronic and mechanid devices in the equipment or system of which the laser is a part. The laser failure rate models have been developed at the “functional,” rather than ‘piece part” level because the available data were not sufficient for “piece part” model devebpment. Nevertheless, the laser functional models are included in this Handbook in the interest of completeness. These laser models will be revised to include piece part modek and other laser types when the data become available. Because each laser family can be designed using a variety of approaches, the failure rate rnodets have been structured on three basic laser functbns whii are common to most laser families, but may differ in the hardware knplernentation of a given function. These functions are the Iasing rneda, the laser pumping mechanism (or pump), and the coupfing method. Examptes of media-related hardware and reliability Influencing factors are the solid state rod, gas, gas pressure, vacuum integrity, gas mix, outgassing, and tube diameter. me electrical discharge, the flashlamp, and energy level are exarr@es of pump-related hardware and reliabilii influencing factors. The coupling function reliability influencing factors are the “Q” switch, mirrors, windows, crystals, substrates, coatings, and level of dust protection provided. Some of the laser models require the number of active optical surfaces as an input parameter. An active opticai surface is one with which the laser energy (or beam) interacts. internally reflecting surfaces are not counted. Figure 8-1 below illustrates examples of active optiil suffaces and count.

Tot*

wloclw9 Mnuf cho ActhmQxkalsurb20

+

Pdult

—. b@u

Figure

8-1:

*am Examples

of Active

Optical

Surfaces

8-1

I

MIL-HDBK-217F

8.1

LASERS,

HELIUM

AND

ARGON DESCRIPTION Helium Neon Lasers Helium Cadmium Lasers Argon Lasers

~

= ‘MED,AZE

+ ‘COUPLING

n E Failures/l

06 Hours

..“ Environment Factor - n=

Lasing Media Failure Rate - kMEDIA Type

‘MEDIA

b

~E

Environment

.30

GB He/Ne

84

He/Cd

228

Argon

457

GF

1.0

GM

4.0

N~

3.0

Nu

4.0

%c % Coupling Failure Rate - ~0[ ----- lpi ,NG ...— Types %OUpLING Helium

0

Argon

6

‘Uc

4.0 6.0 7.0

‘UF

9.0

‘RW

5.0 .10

SF

NOTE: The predominant argon laser failure mechanism

is related to the gas media (as reflected

in XMEDIA; however, when the tube is refilled periodically (preventive maintenance) the mirrors can be expected to (as part of ~OUpLIN@ deteriorate after approximately 104 hours of operation if in contact with the discharge region. ‘COUPLING

8-2

is negligible for helium lasers.

MF

3.0

ML

8.0

CL

NIA

MIL-HDBK-217F ●-”

“

8.2

LASERS,

CARBON

DIOXIDE,

SEALED

DESCRIPTION C02 Sealed Continuous Wave Lasers

Lasing Media FaiWe Rale - ~DM Tube Current (rnA)

I

10 20 30 40 50 100

-. %UEDIA 240 930 1620 2310 3000 6450

~S

Surfaces

‘0s

1

1

2

2

- Numbr

of Active Optical SUrfaces

NOTE: Only *ive optical surfaoss ars counted. An active optical surfaca is one with

%tEDIA - 69(1)-‘0 l= Ttitimti(mA),

Active OptW

whiohth.laser anorgyorbwn~ Internallyreflecting surfaces are not oounted. Sae Fquro 8-1 for exampleson datorminingthe

10s Is15O

number of optical surfaces.

Gas Overfill Factor = * C02 Overfill Percent (%)

%0

Environment Faotor - XE

o

%-1

1.0

Environment

%E .30

25

.75

%3

50

.50

%

1.0

GM

4.0

Ns

3.0

-.01 (%0Overfill)

Overfill percent is based on the psrwnt increase

Nu

4.0

ovsr the o@imum002 partialpssure which is (llm=l normalIyintherango ofl.5t03Tm

AC

4.0

mm Hg Prassure) for mostsealad C02 lasers.

‘IF

6.0

*UC

7.0

*UF

9.0

‘RW

5.0

Peroent of BaJlast Vohmetric Increase

o 50 100 150 200

sF

1.0 .58 .33 .19 .11

.10

hu~

3.0

ML

8.0

c’

WA

n~ - (1~) (% Vol. Inc./l 00)

U-3

MIL-HDBK-217F

8.3

LASERS,

CARBON

—

DIOXIDE, FLOWING DESCRIPTION C02 Flowing Lasers

+J = &JpLIN&OS

x E Failures/l OGHours

Environment

Coupling Failure Rate - XCWPL,NG Power (KW)

%OUpLING

I

.01 .1

2

I

1.0

Factor - XE

fiE

Environment

.30

GB

300

GF

1.0

GM

4.0

Ns

3.0

NU

4.0

*IC

4.0

Beyond the 1KW range other glass failure mechanisms b~in to predominate and alter the ~OUpLING

‘IF

6.0

%OUPUNG” P _ Aver-

3WP

PowerOutputin KW, .01 s Ps 1.0

values.

It should also be notedthat C02 flowinglaser optical

devices are the primary source of failure occurrence. A tailored optical cleaning preventive maintenance program on optic devices greatty extends iaser fife.

*UC

7.0

*UF

9.0

*RW

5.0 .10

SF

Optical Surface Factor - ~S Active Optical Surfaces

I

3.0

ML

8.0

CL

‘0s

1

1

2

2

XOS - Number of Active Opticai Surfaces NOTE: Oniy active optical surfaces are counted. An active opticai surface is one with which the iaser energy or beam interacts. Internally reflecting surfaces are not counted. See Figure 8“1 for exampies on determining the number of opticai surfaces.

8-4

MF

NIA

,..

*

MIL-HDBK-217F

LASERS,

8.4

STATE,

SOLID

ND:YAG

DESCRIPTION Neocfymium-Ytt~m-AbminurnGamet

AND

RUBY

ROD

(ND:YAG) Rod Lasers

Ruby Rod Lasers

+)= ( ‘p”~~ +‘MEDIA

+ 16.3 xc~s)

fXannn 1

--------

The empiricalfmula

IKnmtnn ,. ... ~.-.. Ftaehla~} .

Fla=hlarrmm\

.

---

. .

.

.

.-w.

.-,

Ktypton lamp is: ~p

= @~)

(PPS) 2000 [

k (d,k)

8058

PPS

is the repetition pulse rate in pulses per

1[km] Failures/l

is the fkwhlamp or flashtube input energy per pulse, in joules. Its value is determined from the actual or desgn input energy . For values less than 30 @Jes, use Ej = 30. Default value: E = 40. j

is the average input power in Idbwatts. Default value: P =4.

L

is the flashlamp or flashtube arc length in inches. Defautt value: L -2.

Zca

is the woling factor due to various cooling media immediately surrounding the flashlamp or fkht~. ~~L = 1 for a~ air or inert gas cooling. n-

-.1

for all liquid

cooled.

L

is the flashlamp or flashtube arc length in inches. Default value: L = 2.

Meda Failure Rate - ~EDiA

t

is the truncated pulse width in microseconds. Use t -100 microseconds for any truncatd pulse width exceeding 100 microseconds. For shotier duration pulses, pulse width is to be measured at 10 percent of the maximum current amplitude. Defautt value: t = 100.

designs. Defautt va!ue: ~c~L

is the cooling factor due to various cooling media immediately surrounding the flashlamp or flashtube, ~~~L = 1.0 for any air or inefl gas cooling, ~C@L

= .1 for

ail liquid cooled designs. Default value: ‘COOL

06 Hours

P

is the flashlamp or flashtube inside diameter, in millimeters. Default value: d = 4.

xc~L

for

evalutad herein are the continuouswave (CW) type and are most widely used for commercial solid state applkations. They are approx-imatety7mm in diameter and 5 to 6 inches brig.

second. Typbal values range between 1 and 20 pulses per second.

d

.~v,

is the failure me contributionOf the krypton flashlamp or flashtube. me flashlamps

kpUMp

k the failure rate contribution of the xenon flashlamp or flashtube. The flashlamps evaluated herein are linear types used for military solid state laser systems. Typical defautt model parameters are given below.

Ej

- [625][,0(”$’9

] ~nm,

@lJfvIp

..-.

The empirical formula used to determine *MP

used to determine ~UMp

(Failures/1@ Hours) for Xenon lamps is:

+WMP

06 Hours

Pump Pulse Failure Rate - kpUM@

Pump Pulse Failure Rate - kpuMp

I

~E Failures/l

Laser Type

‘MEDIA

ND:YAG )

R~

= .1, liquid

o _

(3600) (PPS) [43.5 F2052~

PPS

is the number of pulses per second

F

is the energy density in Joules per cm. z/pulse over the cross-sectional area of the laser beam, which is nominalty equivalent to the cross-sectional area of the laser rod, and its value is determined from the actual design parameter of the laser rod utilized.

= .1, Iquid cooled. NOTE: ~MEDIA is negligible for ND:YAG lasers.

8-5

I

MIL-HDBK-217F

LASERS,

8.4

SOLID

STATE,

ND:YAG

% 1

Rk3#ltml#c&&s ~-r~d. ~

BOUOWB provided over tin.

Mln&nalprmXw$Orwdwing opaning, makltananoe, mpdr, and testing. Bellows prddad Ovw Optkat train.

30

duringopening, Minimal pr~ons mdntorumca, repair,and ta8drg. No

60

tx?lbw, prOvWxfOvu ~

RUBY

—

ROD

Environment Factor “ ~E —

CouplingCleadinassFactor - -z CleardinessLovd

AND

train.

Environment GB

Optioal Surfaoe Factor - ~S Active Optical Surfaces

~s

‘0s

1

1

2

2

= Numbr of ActiveOptical Surfaces

NOTE: Only activeoptioalsurfmmsare munted. Anactiveopticalsurfaceis one withwhid the iaser energyor beam interacts.Internallyreflecting surfacesare notcxxmted.See Figure8-1 for examphw on dettinlng surfaces.

8-6

the number of OPUcat

.30

GF

1.0

GM

4.0

Ns

3.0

Nu

4.0

Ac

4.0

AF

6.0

%c NOTE: Mhoughsodod qsternstendmberelMle OnoeCompatible materialshavebeenSeh30ted and proven,extremecaremuststtltbe takento prevsnt theentranoeof partkdatesduringmanufacturing, field ftashlamp repkemmt, or routine maintenance repair. Contamhatkm is the major cause of solid state lasermatfurx3ion, and spedal provlsbns and vigilanoe must oontirwalty be provided to maintain the deanllness level required.

%E

7.0

‘UF

9.0

‘RW

5.0

SF

.10

MF

3.0

ML

8.0

CL

N/A

,,,

.

9

.

.

MIL-HDBK-217F

9.0

RESISTORS,

INTRODUCTION

This section includes the active resistor specificationsand, in addition, some eider/inactive specifications are included because of the large number of equipments stilt in field use which oontain these parts. The Established Reliability (ER) resktor family generaity has four qualification failure rate levels when tested per the requirements of the appikabie specification. These quaiiitbn failure rate levels difier by a factor of ten (from one level to the next). However, field data has shown that these failure rate levels differ by a factor of about only three, hence the ~ values have been set accordingly. The use of the resistor modek requires the calculation of the electrfcat power stress ratio, Stress = -~ Pow@r/~t~~er,orPr~9.16 for variable msktors. The models have been structured such that derating curves do not have to be used to find the base failure rate. The rated IXWer for the stress ratb is ~al to the full nominal rated power of the resistor. For example, a MlL-R_ resistor has the foiiowing derating cume:

100

80 60 40

20

0 40

0

80

120

AMBlENT TEMPERATURE DEGREES CELSIUS

Figure

9-1:

MIL-Ft-39006

IN

Deratlng

Curve

This particular resistor has a rating of 1 watt at 70”C arrtknt, or below. If Itwere behg used in an an’k#ent temperature of 10O°C, the rated power for the stress calculation would still be 1 watt, ~ 45% of 1 watt (as read off the curve for 100*C). Of course, while the deratlng cuwe k not needed to determine the base failure rate, it nmst still be observed as the maxinum operating condtbn. To aid in detenMing if a resistor is being used within rated conditions, the base failure rate tables show entries up to certain combinations of stress and temperature. If a given operating stress and temperature point faits in the blank portion of the base failure rate table, the resistor is ovemtmssed. Such wisappfbatbn wouid require an anatysis of the circuit and operating conditions to bring the resistor within rated conditions.

9-1

I

-----

MIL-I+DBK-217F

9.1

RESISTORS,

FIXED,

SPECIFICATION MIL-R-39008 MIL-R-11

COMPOSITION DESCRIPTION Resistors, Fixed, Composition (Insulated), Established Reliability Resistors, Fixed, Composition (Insulated)

STYLE RCR RC

Xp s kbXRXQnE Failures/l OGHours

Base Failure Rate - ~

Quality Factor - ~

stress-

TA (%) 0 10 20 30 40 50 60

.00007 .00011 .00015 .00022 .00031 .00044 .00063 .00090 .0013 .0018 .0026 .0038 .0054

;: 90 100 110 120

Quality

.3

.5

.7

.9

.00010 .00015 .00022 .00031 .00045 .00066 .00095 .0014 .0020 .0029 .0041 .0060

.00015 .00021 .00031 .00046 .00067 .00098 .0014 .0021 .0031 .0045 .0065

.00020 .00030 .00045 .00066 .00098 .0014 .0021 .0032 .0047

.00028 ,00043 .00064 .00096 .0014 .0021 .0032 ,0048

.1

7CQ

s

.03

R

0.1

P

0.3

M

1.0

MlL-R-l 1

5.0 15

Lower

Environment Factor - ~E — %=4.5x

10-gexp

(

12

Environment

(W))exff?(-))

T=

Ambient Temperature (“C)

s=

Ratio of Operating Power to Rated Power

~E

GB

1,0

GF

3.0

GM

8.0

Ns

5.0

Nu Resistance Factor - ~R Resistance Range (ohms) <.l

M

>.l

Mtol

>l.OMtol >1OM

~R 1.0

M OM

1.1

13

‘Ic

4.0

‘IF

5.0

%c

7.0

*UF

11

‘RMI

19

1.6

SF

2.5

MF

11

ML

27

CL

490

b

.50

9-2

——-- -—

1-

r.llauLe

Lila

L

aullclllu

LAG

u&uw*,

.y”

*u

b..*--

~-----

MIL-HDBK-217F

9.2 SPECIFICATION MIL-R-39017 MIL-R-22684 MIL-R-55182 MIL-R-105O9

RESISTORS,

FIXED,

FILM

DESCRIPTION Fixed, Film, Insulated, Established Reliability Fued, Film, Insulated Fixed, Film, Established Reliability Fixed, Film, High Stability

STYLE RLR RL RN (R, C, or N) RN

Failures/l OG Hours Base Failure Rate - ~

Base Failure Rate - ~

[MIL-R-1 0509 and MIL-R-551 82)

IMIL-R-22684 and MIL-R-990171 ....—.- —— -- ----...._ .._ --- . I

TA (%)

.1

.3

.5

.7

0

.00059

.00073

.00089

.0011

.0013

10

.00063

.00078

.00096

.0012

.0014

.9

20

.00067

.00084

.0010

.0013

.0016

30

.00072

.00090

.0011

.0014

.0018

40

.00078

.00098

.0012

.0016

.0019

50

.00084

.0011

.0014

.0017

.0022

60

.00092

.0012

.0015

.0019

.0024

70

.0010

.0013

.0017

.0021

80

.0011

.0014

.0018

.0024

90

.0012

.0016

.0021

.0027

100

.0013

.0018

.0023

110

.0015

.0020

.0026

120

.0017

.0023

TA (Z: o

.0027

.0019

140

.0022 -

~=3.25x

T

=

S =

104 .xp(*)’exf(=))

.3

.00061

.5

.00074

.00091

.7

.9

.0011

.0014

10

.00067

.00082

.0010

.0012

.0015

20

.00073

.00091

.0011

.0014

.0017

30

.00080

.0010

.0013

.0016

.0019

40

.00088

.0011

.0014

.0017

.0022

50

.00096

.0012

.0015

.0020

.0025

60

.0011

.0013

.0017

.0022

.0028

70

.0012

.0015

.0019

.0025

.0032

80

.0013

.0016

.0021

.0028

90

.0014

.0018

.0024

.0031

F .0040

100

.0015

.0020

.0026

.0035

.0045

110

.0017

.0022

.0029

.0039

.0051

120

.0018

.0024

.0033

.0043

.0058

150

z~~ .0024

.0033

=;

0065

160

.0026

.0036

170

.0029

F

130 140

130

.1

~=

5x10-5exp

.0045

(“(=Y”XPP (-)) 35

T.

Ambient Temperature (°C)

s.

Ratio of Operating Power to Rated Power

Ambient Temperature (oC) Ratio of Operating Power to Rated Power

NOTE: Do not use MlL-R-l 0509 (Characteristic B) below the line. Points below are overstressed.

9-3

I

I

MIL-HDBK-217F

9.2

RESISTORS,

FIXED,

FILM

Resistance Factor - ~n,, Resistance Range (ohms)

lc~

Environment Factor - ~ b

Environment

<.l M

1.0

GB

1.0

>().lMtOIM

1.1

GF

2.0

>l.OMtol

OM

8.0

1.6

Ns >IOM

2.5

QuaJ-~ Factor - ~ Quality

lt~

s

.03

Nu

4.0 14

*IC

4.0

‘IF

8.0

*UC

10

*UF

18

%+/v

19

R

0.1

P

0.3

MF

10

M

1.0

ML

28

MlL-R-l 0509

5.0

MIL-R-22684

5.0

Lower

9-4

~E

15

SF

c,

.20

510

I

MIL-HDE3K-217F

9.3 SPECIFICATION MIL-R-11804

RESISTORS,

RD

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 & %=

.3

.0089 .0090 .0092 .0094 .0096 .0098 .010 .010 .010 .011 .011 .011 .012 .012 .012 .013 .013 .014 .014 .015 .015 .016

.0098 .010 .010 .010 .011 .011 .011 .012 .012 .012 .013 .013 .014 .014 .014 .015 .016 .016

stress .5

QuaIii -

.011 .011 .012 ,012 .012 .013 .013 .014 .014 .015 .015 .016 .016 .017

Factor - ~

Quality .7

.9

.013 .013 .014 .014 .015 .015 .016 .016 .017

.015 .015 .016 .017 .017

%Q !

I I \

MIL-SPEC

Lower

II

I

3.0

Environment Factor - x= Environment GB

2.0

GF GM

NU

202 (-

I

1.0

10

5.0

Ns

7.33 x 10-3 exp

(*)2’)

x

, ‘xp((~)

POWER

OGHours

Base Failure Rate - ~ .1

FILM,

DESCRIPTION Fued, Film, Power Type

STYLE

Ap = kb7cRz*7cE Failures/l

TA (%)

FIXED,

17

*IC

6.0

‘IF

8.0

*UC

14

*UF

18

‘RW

25

.50

SF

(=)”8’)’3

T=

Ambient Temperature (“C)

MF

14

s=

Ratio of Operating Power to Rated Power

ML

36

C’

660

Resistance Factor - ZR Resistance Range (ohms)

x~

lo to 100 > 100to >lOOKtol >lM

1.0 100K M

I I

I

I

1.2

1,3 3.5

9-5

---

i’”’

.

.

MIL-HDBK-217F

9.4

RESISTORS,

NETWORK,

SPECIFICATION MIL-R-83401

FIXED,

FILM

STYLE Rz

~= Temperature

DESCRIPTION Resistor Networks, Fixed, Film

.00006 ~ ZNRZQXE Failures/106 Hours

Factor - XT .

Quality Factor - ~ Quality

TC (Z)

1.0 1.3 1.6 1.9 2.4 2.9 3.5

25 30 35 40

45 50 55 60

80 85 90 95 100 105

110 115 120 125

4.2 5.0

% 75

6.0 7,1

\“

I

8.3 9.8 11 13 15 18 21 24

I

MIL-SPEC Lower

Envirmment

)

=

2.0

GM

8.0

N~

4.0

‘Uc

TC

=

TA + 55 (S)

TA

=

Ambient Temperature (°C) Operating Power Package Rated Power

‘NR = Number of Film Resistorsin Use I Do not include resistors that are not used.

4.0 8.0 9.0

‘UF

18

‘RW

19

I

.50

MF

14

ML

28

c,

Number of Resistors Factor - ~NR

9-6

14

SF

Any device operating at TC > 125°C is overstressed.

NOTE:

~E

GF

‘IF

If Tc is unknown, it can be estimated as

follows:

I

Factor - n=

Case Temperature (“C)

NOTE:

I

3

1.0

‘Ic

s=

“1

GB

Nu

Tc

I I

Environment

27 31

7CQ

!

510

1

MIL-HDBK-217F

9.5 SPECIFICATION MIL-R-39005 MIL-R-93

RESISTORS,

FIXED,

WIREWOUND

DESCRIPTION Fixed, Wlrewound, Accurate, Established Reliability Fixed, Wirewound, Accurate

STYLE RBR RB

Xp = lbnRZQnE Failures/l OGHours Quality Factor - ~

Base Failure Rate - ~

str13s .1

.3

.0033 .0033 .0034 .0034 .0035 .0037 .0038 .0041 .0044 .0048 .0055 .0065 .0079 .010 .014

.0037 .0038 .0039 .0040 .0042 .0043 .0046 .0049 .0053 .0059 .0068 .0080 .0099 .013

TA (W) 0 % 30 40 50 60 70 80 90 100 110 120 130 140

.5 .0CM5 .0047 .0048 .0050 .0052 .0055 .0059 .0064 .0070 .0079 .0092 .011 .014 .018

.7 .0s7 .0059 .0062 .0066 .0070 .0075 .0081 .0089 ,0099 .011 .013 .016 .021 .028

Quality

7tQ

s

.030

R

.10

P

.30

.9 .0075 .0079 .0084 .0090 .0097 .011 .012 .013 .015 .017 .020 .025 .033

M

1.0

MIL-R-93

5.0

Lower

15

Environment Factor - XE

m

Environment ~.

.0031 exp

(T+273)loexpp(T;g3) 398

)15

GB GF

T-

Ambient Temperature (oC)

GM

s=

Ratio of Operating Power to Rated Power

N~

Resistance Resistance

>lOOKtol >IM

~R 1.0

Up to 10K > 10Kto

Factor - ~R

Range (ohms)

100K M

1.7 3.0 5.0

2.0 11 5.0

Nu

18

AC

15

‘IF

18

*UC

28

*UF

35

%w

27

.80

SF MF

14

ML

38

c,

610

9-7

I 4

,, . .

.

.

.

,,

.

MIL-HDBK-217F

9.6

RESISTORS,

FIXED,

WIREWOUND,

SPECIFICATION MIL-R-39007 MIL-R-26

POWER

STYLE

~

=

DESCRIPTION Fixed, WireWound, Power Type, Established RelkbNty Fixed, Wirewouruf, Power Type

hb7c#Q7t~ Failures/l OGHours

Base Failure Rate - &. Stress TA (“C)

.1

.3

.5

Resistance Factor - ZR .7

.9

1: 20 30 40

.0042 .0045 .0048 .0052 .0056

.0062 .0068 .0074 .0081 .0089

.0093 .010 .011 .013 .014

.014 .016 .017 .020 .022

.021 .024 .027 .031 .035

50 60 70 80 90 100

.0081 .0066 .0072 .0078 .0085 .0093

.0097 .011 .012 .013 .014 .016

.016 .017 .020 .022 .025 .028

.025 .028 .032 .037 .042 .048

.ti–

110 120 130 140 150

.010 .011 .012 .014 .015

.018 .020 .022 .025 .028

,031 .036 .040 .046 .052

.055 .063

160 170 180

.032 ,036 .040 .046 .052

.060 .068 .078

X%

.017 .019 .021 .023 .026

210 220 230 240 250

.029 .033 .037 .042 .047

.059 .068 .077 .088 ,10

260 270 280 290 300 310

.054 .061 .06 .079 .091 .10

~-M148eXP(~)2ex@)

(MIL-R-39007) Re istan ) Ra[ up ●s00 bsoc 1:

Siyte

z

7!3(

*75 KkJ 1*

>19(

>Iw

I&

&

1.0

1.0

1.2

1.2

1.6

1.6

1.6

NA

1.0

1.0

1.0

1.2

1.6

1.6

NA

N/l

1.0

1.0

1.0

1.0

1.2

1.2

1.2

1.6

1.0

1.2

1.6

1.6

NA

NA

NA

NA

1.0

1.6

NA

NA

NA

NA

NA

NA

1.0

1.6

1.6

NA

NA

NA

NA

NA

1.0

1.0

1.1

1.2

1.2

1.6

NA

NA

1.0

1.0

1.4

NA

NA

NA

NA

MA

74

78

80

81

82

84

89

Quality Factor - nQ Quality

KQ

s

.03

R

.10

P

.30

(=))

T=

Ambient Temperature (“C)

s=

Ratio of Operating Power to Ftatad Power

NOTE: Do not use MlL-R-39oo7 Resistors below the line. Points below are overstressed.

--

s

I

*

71

M

1.0

MIL-R-26

5.0

Lower

Y-u

>1K

w

15

MIL-HDBK:217F

9.6

Resistanm

10 Rwll Rw

RW12 Rw 13 Rw 14 Rw 15 RW16 RW20 Rw 21 KE RW 24 RW 29 RW30 Rw 31 RW32 ZE EE Rw 37 E: Rw 47 RW55 RW56 RW 67 l%: Rw 70 Rw 74 Fw 70 R: RW 81

up s 100 1.0 t .0 1.0 1.0 1.0 1.0 1,0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

Environment I

>100 m IK

>1K to ICM

100K

1.0 1.0 1.0 1.0 1.0 1.0 1.2 1.0 1.0 1,0 1.0 1.0 1.0 1.2 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.2 1.0 1.0 1.0 1.2 1.2

1.0

1.0

1.0 1.2 1.0 1.0

1.2 1.6 2.0 2.0 2.0 NA NA 2.0 1.6 1.4 1.2

;:: 1.6 1.2 1.2 1.0 1.0 1.4 1.6 1.4 1.2 1.0 1.0 1.0 1.2 1.2 1.0 1.0 1.0 1.4 1.2 1.0 1.0 NA 1.4 ;:: 1.4 1.6 NA

>1OK to

I& NA NA 1.4

1.4 1.4 1.5

1.6 1.4 1.4 1.4 2.4 2.6

FIXED,

WIREWOUND,

POWER

Environment Factor - ~

Factor - XR

(MIL-R-2 Resistance mge MIL-R-26

RESISTORS,

~E

]ms) *la b I!iw

>150K

J%

GB

1.0

GF

2.0

%

10

1.2 1.6 M

1.6 NA NA

E

E

E NA NA NA NA NA

K NA WA NA NA NA

K NA NA

E NA NA

SF MF

13

$ NA NA NA 1.6 1.6 1.6 NA

E NA

ML

34

CL

610

NS NU

$ NA 2.0 2.0 NA NA

5.0 16

‘Ic

4.0

‘IF

8.0

‘Uc

9.0

*UF

18

‘Rw

23 .30

K E NA W 1.6 1.6 NA NA NA

E NA E NA E

K NA NA K K NA

9-9

MIL-HDBK-217F

9.7

.

FIXED,

RESISTORS,

WIREWOUND,

SPECIFICATION MIL-R-39009

STYLE RER

MIL-R-18546

RE

POWER,

CHASSIS

DESCRIPTION Fixed, Wirewound, Power Type, Chassis Mounted, Established Reliability Fixed, Whewound, Power Type, Chassis Mounted

Resistance Factor - ZR

Base Failure Rate - ~ stress TA (Z)

.1

.3

(Characteristic G (tnductive Winding ti MlL-R-l 8546 and lL-R- 1009) Kmotr hms mos I 10 +*1 T + Rated XIK c) to Styte Powar 2% IK IOK z

.5

MOUNTED

.7

0

.0021

.0032

.0049

.0076

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250

.0023 .0025 .0020 .0031 .0034 .0037 .0041 .0045 .0050 .0055 .0060 .0066 .0073 .0081 .0089 .0098 .011 .012 .013 .014 .016 .017 .019 .021 .023

.0036 .0040 .0045 .0050 .0056 .0063 .0070 .0079 .0088 .0098 .011 .012 .014 .015 .017 .019 .022 .024 .027 .030

.0056 .0064 .0072 .0082 .0093 .011 .012 .014 .016 .018 .020 .023 ,026 .030 .034

.0087 .0100 .012 .013 .016 .018 .021 .024 .028 .032

.9 .012 .014 .016 .019 .022 .026

T=

Ambient Temperature (“C)

s=

Ratio of Operating Power to Rated Power

5

1.0

1.2

1.2

1.6

NA

NA

RE 65 RER65

10

1.0

1.0

1.2

1.6

NA

NA

RE 70 RER70

20

1.0

1,0

1.2

1.2

1.6

NA

RE 75 RER75

30

1.0

1.0

1.0

1.1

1.2

1.6

RE 77

75

1.0

1.0

1.0

1.0

1.2

1.6

RE 80

120

1.0

1.0

1.0

1.0

1.2

1.6 I

Resistance Factor - XR (Charaderistic N (NoninductiveWinding)of MIL-R-18546 and Noninc ctively Woun Styles of MIL 3-39009) Resi: mce Ran e Raled 4

~ = .00015 exp 2.64 ( (%)ex(a’a)

RE 60 RER60

Styb

Ptxer

-qr

52)

T!mi 4 to lK

E

1;

20K

RE 60 RER40

5

1.0

1.2

1.6

NA

NA

NA

RE 65 RER45

10

1.0

1.2

1.6

NA

M

M

RE 70

20

1.0

1.0

1.2

1.6

NA

NA

30

1.0

1.0

1.1

1.2

1.4

NA

75

1.0

1.0

1.0

1.2

1.6

NA

120

1,0

1.0

1,0

1.1

1.4

NA

RER50 RE 75 RER55

RE 80

,,.

!.

.

MIL-HDBK-217F

9.7

RESISTORS,

FIXED,

WIREWOUND,

POWER,

MOUNTED

Environment Factor - ~

Quality Faotor - ~

Environment

Quality s

.030

R

.10

P

.30

1,0

GF

2.0

GM Ns

1.0

Nu

MIL-R-18546

5.0

AIc

15

~E

GB

M

Lower

CHASSIS

‘IF ‘Uc *UF ‘RW

10 5.0 16 4.0 8.0 9.0 18 23 .50

SF MF

13

ML

34

c~

610

9-11

MIL-FIDBK-217F

SPECIFICATION M IL-T-23648

DESCRIPTION Thermally Sensitive Resistor, Insulated, Bead, Disk and Rod-Types

STYLE RTH

Xp = &QzE

Failures/l OG Hours

Environment Factor - xz

Base Failure Rate - ~ —

L

Type

A~

Bead (Styles 24, 26,28,30,32, 34, 36, 38, 40)

.021

Environment

GB

1.0

GF

5.0

% Disk (Styles 6,8, 10)

.065

Rod

.105

(Styles 12, 14, 16, 18, 20, 22, 42)

Quality MIL-SPEC Lower

9-12

21

Ns

11

Nu

24

‘Ic

11

‘IF

30

‘Uc

Quality Factor - fl~

~E

16

‘UF

42

‘RW

37 .50

SF ~Q

1 15

MF

20

ML

53

c,

950

. ..

.. . *.

....,.

.,.

.. . .

i

.

.,, ..

. . . .. .

MIL-tiDBK-217F

1

9.9

I

SPECIFICATION MIL-R-39015

STYLE Iv-R

MIL-R-27208

RT

RESISTORS,

VARIABLE,

W! REWOUND

DESCRIPTION Variable, Wtrewound, Lead Screw Actuated, Established Reliability Variable, Wkewound, Lead Screw Actuated

Xp = kbfiTAp~XRZvXQzE Failures/l OG Hours Potentiometer Taps Factor - q~o=

Base Failure Rate - ~

snr

stress

.1

I

o

.0089 .0094 .010 .011 .012 .013 ,014 .016 .018 .021 .024 .029 .035 .044 .056

; 30 40 50 60 70 80 90 100 110 120 130 140

l--

.3 .011 .012 .012 ,013 .015 .016 .018 .020 .023 .027 .032 .038 .047 .059

.5

.7

.013 .014 .015 .017 .018 .020 .023 .026 .03 .035 .042 .051

.9

.016 .017 .019 .021 .023 .026 .029 .033 .039 .046 .055

.020 .021 .024 .026 .029 .033 .037 .043 .050 .060

N TAPS

‘TAPS

3 4 5 6 7 a 9 10 11 12

1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1 2.3 2.5

2.7 2.9 3.1 3,4 3.6 3.8 4.1 4.4 4.6 4.9

g

N TAPS

‘TAPS

23

5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 7.7 8.0

z E :: 30 31 32

2

. %

-

T

-

Ambient Temperature (“C)

s

=

Ratio of Operating Power to Rated Power. See Section 9.16 for Calculation of S.

0062”’’(=?’‘X’(S (T=);

Resistance Range (ohms)

‘TAPS

13 14 15 16 17 18 19 20 21 22

=’ %APS

=

‘TAPS

=

2S

+ 0.792

Number of PotentiometerTaps, includingthe Wiper and Terminations. ~ I Voltage Factor - xv

Applied Rated Otoo.1 >0.1 to >0.2 to >0.6 to >0.7 to >0.8 to >0.9 to

Resistance Factor - XR

I

N TAPS

I

%

10t02K

1.0

>2K to 5K

1.4

>5K to 20K

2.0

w

Applied

Voltage* Voltage

1.10 1.05 1.00 1.10 1.22 1.40 2.00

0.2 0.6 0.7 0.8 0.9 1.0

=

‘%

~RpApplied

R

=

Nominal Total Potentiometer Resistance

‘Applied

=

Power Dissipation

‘Rated

-

v

Rated

=

40 Volts for RT 26 and 27 90 Votts for RTR 12, 22 and 24; RT 12 and 22

MIL-HDBK-217F

9.9

RESISTORS,

VARIABLE,

WIREWOUND

7

QualityFactor - nfi

Environment

u

Quality

L

%Q

I

s

.020

R

.060

Environment

1.0

GF

2.0

P

.20

Ns

M

.60

Nu

Lower

3.0 10

~E

%

%...

MIL-R-27208

Factor - KG

12 6.0 20

‘Ic

5.0

‘IF

8.0

‘Uc

9.0

‘UF

15

‘RW

33 .50

SF MF

18

ML

48

cl

I

9-14

870

I

.!

/

.,,

MIL-HDBK-217F

1 9.10 SPECIFICATION MIL-R-12934

RESISTORS,

VARIABLE,

Resistance Factor -

stress

o

E

30 40 50 60 70 80 90 100 110 120 130 140

.10 .11 .12 .13 .14 .15 .17 .19 .21 .24 .28 .33 .40 .49 .60

.3

.5

.7

.9

.11

.12 .13 .14 .16 .J7 .20 .22 ‘ .26 .30 .36 .44 .54

.13 .14 .16 .17 .20 .22 .26 .30 .36 .44 .54

.14 .15 .17 .19 .22 .26 ,30 .36 .43 .54

.12 .13 .14 .15 .17 .19 .22 .25 .30 .35 .42 .52 .65

-.0735

exp ( 1.03

(~

1.0

>?OK to 20K

1.1

>20K to 50K

1.4

>50K to 10OK

2.0

to 200K

2.5

>100

K

to 500K

>200K

‘TAPS

)4.45)X

3.5

s.

(*)351)

Ratio of Operating Power to Rated Power. See Section 9.16 for Calculating S.

?AP:

‘TAPS

TAPS

‘TAPS

;:: 2.1

::: 3.6 3.8 4.1 4.4

5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4

:::

:;

:::

;;:

1.2 1.4 1.5

Ambient Temperature ~C)

N

13 14 15 16 17 18 19 20

1.1

T=

‘R

100 to IOK

1.0 exp((z%)

R

Resistance Range (ohms)

Potentbrneter Taps Factor \

PRECISION

DESCRIPTION Variable, WIrewound, Precision

STYLE RR

Base Failure Rate - ~ .1

WIREWOUND,

$:;

ConstructionClass Factor - z= b f

ConstructionClass RR0900AZA9J1

03”

I

3

7K* 2.0

3

1.0

4

3.0

5

1.5

‘%APS

=

‘TAPS

-

M5 25

.(-),,,

.

Number of Potentiometer Taps, including the W@er and Terminations.

“ Sample type designation to show how construction class can be found, In this example the construction cJass is 2. Construction class should always appear in the eighth position.

MIL-HDBK-217F

RESISTORS,

9.10

VARIABLE,

WIREWOUND,

PRECISION

—

Vottage Factor - ~ Applied Rated o

Quality Factor - XQ

Voltage’ voltage

to 0.1

‘% MIL-SPEC

2,5

Lower

5.0

1.10

>0.1 to 0.2

1.05

0.6

1.00

>0.2 to

UQ

Quality

Environment Factor - n=

>0.6 to 0.7

1.10

>0.7 to 0.8

1.22

GB

1.0

>0.8 to 0.9

1.40

GF

2.0

>0.9 to 1.0

2.00

GM

Environment L

18

Ns

“v

Applied

==

RP

-

‘Applied v

Rated

9

=

Nu

Nominal Total Potentiometer

Rated

‘Rated

.

-

8.0

*IC ‘IF

12

*UC

13

Power Dissipation

*UF

18

*RW

53

250 Votts for RR0900, RRI 100,

423 Volts for RR3600, RR3700 500 Votts for RR1 000, RR1 400, RR21 00, RR3600, RR3900

9-16

30

Resistance

RR1300, RR2000, RR3000, RR31OO, RR3200, RR3300, RR3400, RR3500 v

8.0

SF

.50

MF

29

ML

76

CL

1400

*

————

—

MIL-HDBK-21

RESISTORS,

9.11 SPECIFICATION MIL-R-19

STYLE RA

MIL-R-39002

RK

;F

VARIABLE,

WIREWOUND,

DESCRIPTION

Variable, Wirewound, Semiprecision (Low Operating Temperature) Variable, WWnvound, Semiprecision

kp =

+)~A#R’f/nQn Failures/l

06 Hours

E

Resistance Factor - ZR

Base Failure Rate - ~

I

‘A(~)

.1

0

.055

.063

10

.058

“

stn?ss .5

Resistance Range (ohms) .7

.9

.072

.083

.095

.069

.081

.095

.11

>2K

>5K to 10K

.3

SEMIPRECISION

I

%

10t02K

20

.063

.076

.092

.11

.13

30

.069

.086

.11

.13

,17

40

.076

.098

.13

.16

.21

.085

.11

.15

.20

.27

50

N

70 80

I

:6,1= .16

.26

.42

.69

100

.19

.34

.59

1.0

.45

.85

90

I

110

.24

120

.31

130

.42

1.1

)

\

1.0

to 5K

1.4 2.0

Potentiometer

60

= .0398 exp

e+%

(-

514

(*)446

(%)5””). )

T=

Ambient Temperature (“C)

s-

Ratio of Operating Power to Rated Power, See Section 9.16 for S Calculation.

TAPS

1

Taps

N

‘TAPS

Factor - ~APq

. . ..-

TAPS

‘TAPS

N TAPS

‘TAPS

3

1.0

13

2.7

23

5.2

4

1.1

14

2.9

24

5.5

5

1.2

15

3,1

25

5.8

6

1.4

16

3.4

26

6.1

7

1.5

17

3.6

27

6.4

8

1.7

18

3.8

28

6.7

9

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

2 NOTE: Do not use MlL-R-l 9 below the line. Points below are overstressed.

MS ?APS

“

‘TAPS

=

25

+ 0.792

Number of Potentiometer Taps, including the Wiper and Terminations.

9-17

MIL-HDE3K-217F

RESISTORS,

9.11

VARIABLE,

WIREWOUND,

—

SEMIPRECISION

Vottage Factor - ~

Environment

Factor - z= L

Environment

Applied Voltage* Rated Voltage

%

Otoo.1

GB

1.0

1.10

GF

2.0

>0.1 to 0.2

1.05

GM

>0.2

to 0.6

1.00

>0.6

to 0.7

1.10

>0.7

to 0.8

1.22

16 7.0

N~

28

Nu

8.0

Alc

12

‘IF

0.9

1.40

>0.9 to 1.0

2.00

>0.8

to

N/A

%c

N/A

‘UF

38

‘RW ●V

.50

SF Applied

=

Nominal Total Potentiometer

Rp

MF

N{A

ML

N/A

CL

NIA

Resistance ‘Applied v

-

Power D~ssipation 50 Votts for RA1o

Rated

75 Volts for RA20X-XC, F 130 Volts for RA30X-XC, F 175 Volts for RA20X-XA 275 Volts for RK09 320 Volts for RA30X-XA

Quality Factor - n= Quality

I

MIL-SPEC

2.0

Lower

4.0

9-18

I

I

I

I

I

I

I

I

I

I

#u

1

.UUIE

.Ulz

.UEU

MIL-HDBK-217F

9.12

VARIABLE,

Sm?ss

“

H..,.

Resistance Factor - nR

Base Failure Rate - ~ .1

.3

.5

.7

0

.064

.074

.084

.097

.11

10

.067

.078

.091

.11

.12

20

.071

.084

.099

.12

.14

30

.076

.091

.11

.13

.16

.15 .17

TA (%)

POWER

Variable, Whwound, Power Type

&~Ap#R~ZcZ&EFailures/IO’

%=

WIREWOUND,

DESCRIPTION

STYLE RP

SPECIFICATION MIL-R-22

RESISTORS,

.9

Resistance Range (ohms)

I

I

‘R

1 to 2K >2K

tO

1.0 5K

1.4

>5K to 10K

2.0

Potentiometer

Taps

Factor - ~APS

., .,-

‘TAPS

N TAPS

3

1.0

13

2.7

23

5.2

4

1.1

14

2.9

24

5.5

5

1.2

15

3.1

25

5.8

.15

6

1.4

16

3.4

26

6.1

.18

7

1.5

17

3.6

27

6.4

8

1.7

18

3.8

28

6.7

9

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

40

.081

.099

.12

50

.087

.11

.14

60

.095

.12

.15

70

.10

.14

.18

80

.12

90

.13

100

.15

110

.17

120

.20

N

TAPS

‘TAPS

N TAPS

‘TAPS

~ = .0481 exp

\

exp(+

(

334

(T:%)4’6)X

(TJ~~)2083) 2 us

T.

Ambient Temperature (“C)

%APS

=

s=

Ratio of Operating Power to Rated Power. See Section 9.16 for S Calculation.

‘TAPS

=

25

+ 0.792

Number of Potentiometer Taps, including the W@er and Terminations

9-19

.

.-.

.A

--,

I

i

I I

MIL-HDBK-217F

RESISTORS,

9.12

VARIABLE,

WIREWOUND,

POWER

Voltage Factor - ~

Quality Factor - XQ

Applied Voltage* Rated Voltage

Quality ‘%

I

MIL-SPEC Otoo.1

1.10

>0.1 to 0.2

1.05

>0.2 to 0.6

1.00

>0.6 to 0.7

1.10

Lower

1.22

>0.8 to 0.9

1.40

>0.9 to 1.0

2.00

Environment

Environment

Rp

Nu

=

Nominal

Alc

‘Rated

‘IF

=

Power

=

250 Volts for RP06,

=

Dissipation

‘Uc RP1 O

I

Class Factor - ~

Construction

Style

. -

Xc

Class Enclosed

RP07,

Unenclosed

All Other Styles are Unenclosed

RP1l,

RP16 I

9-20

~E 16 7.0 28 8.0 12 N/A

‘UF

N/A

*RW

38 .50

SF

500 Votts for Others

Construction

I

3.0

~RPpApplied Total Potentiometer

Factor - ZE

GF

=

Resistance ‘Applied

4.0

1.0

Ns Applied

2.0

GB

GM

●v

~Q

I

\ >0.7 to 0.8

I

20 1.0

II

I

MF

N/A

ML

WA

cL

NIA

b

.

MIL-HDBK-217F

9.13 SPECIFICATION MIL-R-22097

STYLE RJ

MIL-R-39035

RJR

RESISTORS,

TA (%)

.1

DESCRIPTION

Failures/l

0

.021 .021 .022 .023 .024 .025 .026 .028 .030 .034 .038 .043 .050 .060 .074

;: 30 40 50 60 70

I

% 100 110 120 130 140

smss .5

.023 .023 .024 .025 .026 .028 .030 .032 .035 .039 .044 .051 .060 .073

.024 .025 .026 .028 .029 .031 .033 .036 .040 .045 .052 .060

06 Hours Resistance Factor - mR

Failure Rate - & .3

NONWIREWOUND

Variable, Nonwifewound (Adjustment Types) Variable, Nonwirewound (Adjustment Types), Established Reliability

% = ‘b%APS’R%%’E Base

VARIABLE,

.

.7

.9

.026 .027 .029 .030 .032 .035 .038 .042 .046 .053 ,061

.028 .030 .031 .033 .036 .039 .043 .047 .053 .061

Resistance Range (ohms) 10 to 50K

1.0

>50K to 100K

1.1

>IOOK to 200K

1.2

>200K to 500K

1.4

>500K

1.8

to 1 M

Potentiometer N

‘R

N

Taps

Factor -

‘%APS N

TAPS

‘TAPS

2.7

23

5.2

14

2.9

24

5.5

1.2

15

3.1

25

5.8

6

1.4

16

3.4

26

6.1

Ambient Temperature (“C)

7

1.5

17

3.6

27

6.4

Ratio of Operating Power to Rated Power. See Section 9.16 for S Calculation.

8

1.7

18

3.8

28

6.7

9

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

TAPS

‘TAPS

TAPS

3

1.0

13

4

1.1

5

‘TAPS

I I

\

=

.019 exp (. 445

.xP(&(T;;r)

T= s

=

(Il&y)x

246)

2 MEf hAPS

=

‘TAPS

=

25

+ 0.792

Number of Potentiometer Taps, , including the Wiper and Terminations.

9-21

I

1I MIL-HDBK-217F

9.13

RESISTORS,

VARIABLE,

NONWIREWOUND

Voltage Factor - ~

—

Environment Factor - xc L

Applied Voltage” Rated Voltage

Environment *v

GB

1.0 3.0

Oto 0.8

1.00

GF

>0.8 to 0.9

1.05

%

>0.9 to 1.0

1.20

N~ Nu

“v

==

Rp

=

Applied

6.0 24 5.0

‘IF

7.0

AUc

12

‘UF

18

‘RW

39

‘Applied

=

Power Dissipation

v

=

200 Votts for RJ and RJR26;

SF

RJ and RJR50

MF

22

ML

57

Rated

=

300 Volts for All Others *

Quality Factor - G

Quality s

.020

R

.060

P

.20

M

.60

MIL-R-22097 Lower

9-22

———__

14

Alc

Nominal Total Potentiometer Resistance

~E

.— _ _

3.0 10

c1

.50

1000

MIL-HDBK-217F

RESISTORS,

9.14

Variable, Composition, Low Precision Failures/l

Lp = ‘#TAp&#f/nQnE

I

COMPOSITION

DESCRIPTION

STYLE RV

SPECIFICATION MIL-R-94

VARIABLE,

OG Hours Resistance Factor - Xn

Base Failure Rate - ~

..

Resistance Range (ohms)

Stress .5

.7

.9

.032

.035

.038

50 to 50K

1.0

.031

.034

.038

.042

>50K to lOOK

1.1

.029

.033

.037

.042

.048

>1OOKto 200K

1.2

30

.031

.036

.041

.048

.056

>200K to 500K

1.4

40

.033

.039

.047

.056

.067

>500K tO 1 M

1,8

50

.036

.044

.054

.067

.082

60

.039

.050

.065

.083

.11

70

.045

.060

.08

,11

.14

80

.053

.074

.10

.15

90

.065

.096

,14

100

.084

.13

110

.11

TA (%)

.1

.3

o

.027

.030

10

.028

20

Potentiometer N

%

=

.0246

.xp(&(w)”

Ts

13XP

[. 459

(*)9.3-)X )

Ambient Temperature (“C) =

Ratio of OperW!ng Power to Rated Power, See Section 9.16 for S Calculation.

N

Factor - ~AP: ‘TAPS

N

3

1.0

13

2.7

23

‘TAPS 7 5.2

4

1.1

14

2.9

24

5.5

5

1.2

15

3.1

25

5.8

6

1.4

16

3.4

26

6.1

7

1.5

17

3.6

27

6.4

0

1.7

18

3.8

28

6.7

9

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

TAPS

‘TIW

Taps

?APS

-

‘TAPS

=

TAPS

TAPS

MEr+07,2 25

.

Number of Potentiometer Taps, including the Wiper and Terminations.

9-23

MIL-HDBK-217F

9.14

RESISTORS,

VARIABLE,

COMPOSITION

Environment Factor - XE

Voltage Factor - ~ Applied Voltage* Rated Voltage

Environment

%

GB

1.0 2.0

o to 0.8

1.00

GF

>0.8 to 0.9

1.05

GM

>0.9 to 1.0

1.20

“v

Applied

Rp

“ =

-d Nominal Total Potentiometer Resistance

‘Applied v

Rated

29

*IC

40

‘IF

65

‘Uc

*RW 500 Volts for RV4X--XA8XB

=

500 Vofts for 2RV7X--XA&XB

w

350 Volts for RV2X-XA&XB 350 Votts for RV4X--XA&XB

=

350 Votts for RV5X--XA&XB

=

350 Volts for RV6X--XA&XB

w

250 Votts for RV1 X--XA&XB

=

200 Votts for All Other Types

Quality Factor - nO

I

9-24

MIL-SPEC

2.5

Lower

5.0

48 78 46

SF

.50

MF

25

ML

66

cl =

8.0

Nu

Power Dissipation

=

19

N~

*UF .

~E

1200

lvllL-t-fDBK-217F

9.15

RESISTORS,

SPECIFICATION MIL-R-39023

STYLE RQ

MIL-R-23285

RVC

VARIABLE,

NONWIREWOUND,

Failures/l

OG Hours Base Failure Rate - ~

~RQ Stvle OnIv) ——

% 80 90 100 110

.1

.3

.5

.7

.9

.023 .024 .026 .028 .032 .037 .044 .053 .068 .092 .13 .20

.024 .026 .029 .032 .036 .042 .051 .064 .083 .11 .17

.026 .029 .032 ,036 .041 .049 .060 .076 .10 .14

.028 .031 .035 .040 .047 .057 .070 .091 .12

.031 .034 .039 ,045 .053 .065 .083 .11

T+273

:.,”;;;

0 ;; 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

7.4

T= s

&F)

‘6

Resistance

Range

.5

.7

.9

.028 .029 .030 .031 .032 .034 .036 .039 .043 .048 .055 .064 .077 .096 .12 .17 .24 .37

.031 .032 .033 .035 .037 .040 .044 .049 .055 .063 .075 .091 .11 .15 .20 .29 .44

.033 .035 .037 .040 .043 .047 .053 .060 .070 .083 .10 .13 .17 .23 .33 .50

.036 .038 .041 .045 .050 .056 .064 .075 .09 .11 .14 .18 .25 .36 .53

.039 .042 .046 .051 .058 .066 .078 .093 .11 .15 .19 ,26 .37 .55

T+273 — () 398

7.9

(T;Y);3

)

T

=

Ambient Temperature (“C)

s

=

Ratio of Operating Power to Rated Power. See Section 9.16 for S Calculation.

‘R

Up to 10K

1.0

>1 OK to 50K

1.1

>50K

to 200K

1.2

>200K

tO 1 M

1.4

>lM

.3

q(a)

Factor - ZR

(Ohms)

.1

.0257 exp

%=

Ratio of Ogmrating Power to Rated Power. See Section 9.16 for S Calculation.

Resistance

!.,

)

Ambient Temperature (“C) =

-F

TA (’C)

() h

lRVP. ,. . . . .Shfk -., .- mlu) )

.

&iess

0

PRECISION

DESCRIPTION

Base Failure Rate - ~

10 20 30 40 50

AND

Variable, Nonwirewound, Film, Precision Vatiabie, Nonwirewound, Film

Lp = kbXTAp~ZRZvZQnE

TA (W)

FILM

1,8 I

9-25

MIL-HDBK-217F

9.15

RESISTORS,

VARIABLE,

NONWIREWOUND,

FILM

AND

Potentiometer Taps Factor - ~APq

Quality Factor - TCO

. . ..-

N

TAPS

N

‘TAPS

TAPS

‘TAPS

N

PRECISION

TAPS

‘TAPS

Quality

3

1.0

73

2.7

23

5.2

4

1.1

14

2.9

24

5.5

5

1.2

15

3.1

25

5.8

6

1.4

16

3.4

26

6.1

7

1.5

17

3.6

27

6.4

8

1.7

18

3.8

28

6.7

9

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

NS

12

2.5

22

4.9

32

8.0

Nu

MIL-SPEC

2

Lower

4

Environment Environment

Factor - XE ~E

GB

1.0

GF

3.0

GM

14 7.0 24

w 6.0

*IC 2 d %APS

=

‘TAPS

=

+ 0.792

25

Number of Potentiometer Taps, including the Wiper and Terminations.

‘IF

12

%c

20

*UF

30

‘RW

39

SF Voltage Applied Rated

Factor - ~

Voltage” Voltage

‘v

MF

22

ML

57

c,

O to 0.8

1.00

>0.8

to 0,9

1.05

>0.9 to 1.0

1.20 r

●V

.

~’

=

Nominal Total Potentiometer

Applied

Rp

Resistance ‘Applied

=

Power Dissipation

v

=

250 Votts for RQ090, 110, 150, 200,

Rated

300

9-26

=

500 Volts for RQ1 00, 160, 210

a

350 Votts for RVC5, 6

I .50

1000

-

*

,.

“

MIL-HDBK-217F

9.16

CALCULATION

OF

STRESS

RATIO

FOR

POTENTIOMETERS

Stress Ratb (S) Cakulation for Potentiometers

Stress Rat& (S) Calculationfor Rheostats

Connected Conventionally

&

‘mnax

s-

*

‘APPLIED

s. ‘EFF

%AffiEt)(’maxr~ed)’

x ‘GANGED

Equhmkmtpowerinputtothe potendometerwhenitis not loaded(i.e.,wiper lead dkaommctod).Calcukte as follows:

Maxinwn ament Whii will be passed through the rheosta in tho ckouft.

ImZIXrat~

Current rating of

the

potentiometer. H ourrent rating is not given, use:

V2 in ‘Applied

&te@p P

rated

Rp

x ‘RATED

Power Rating of Potentiometer

%

Vin

InputVoltage

Rp

Nominal Total Potentiometer Resistance

Nominal TotalPotentiometer

%ATED

Power Rating of Potentiometer

Resistance

%ANGED

%4NGED

Factor to cxmect for the

Factor to correct for the reduction in effective rating of the potentiometer due to the dose proxim~ uf two or more potentiometers when they are ganged together on a common shaft. see below.

reduction in affective ratfng of the potentiometer due to the dose proximity of two or more potentiometer when they are ganged together on a cwnmon shaft. See bebw.

Correction factor for the electrical loading effect on the wiper oontact of the potentiometer. Its value is a function of the type of potentiometer, its resistance, and the bad resistance. See next page.

Ganged-Potentiometer FWOf

B

r

Number of Sections Single TW Three Four Five Six

First Potentiometer Next to Mount 1.0 0.75 0.75 0.75 0.75 0.75 I

l-hkd in Gang

Second in Gang 0.60 0.50 0.50 0.50 ().50

‘ 0.60 0.50 0.40 0.40

- ICG~GED Fourth in Gang

Not App Iioable Not Not 0.60 0,50 I 040

Fifth in Gang

Sixth in Gang

Applicable Applicable Not 0.60 050

Applicable 1 Not Applicable I 060

9-27

,-

(

MIL-HDBK-217F

9.16

CALCULATION

OF STRESS

RATIO

FOR

Styk Constant - KH .,

Loaded Potentiometer Derating Factor- ZEFF

%1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 3.0 4.0 5.0 10.0 100.0

Potentiometer

0.2

0.3

0.5

1.0

.04 .13 .22 .31 .38 .45 .51 .55 .59

.03 .09 .16 .23 .29 .35 .40 .45 .49 .53 .65 .73 .81 .86 ,88 .94 .99

.02 .05 .10 .15 .20 .25 .29 .33 .37 .40 .53 .82 .72 .78 .82 .90 .99

.01 .03 .05 .08 .11 .14 .17

% .80 .87 .90 .92 .96 1.00

%? .25 .36 .44 .56 .64 .69 .83 .98

=

=

f%”

Style Type

%

MlL-R-l 9

RA

0.5

MIL-R-22

IW

1.0

MN-R-94

Rv

0.5

MlL-R-l 2934

RR1 000, 1001,

0.3

1003, 1400, 2100, 2101, 2102,2103 All Other Types

0.2

MIL-R-22097

RJll,

0.3

MIL-R-22097

All Other Types

0.2

MIL-R-23285

Rvc

0.5

MIL-R-27208

RT22, 24,26,27

0.2

MIL-R-27208

AH Other Types

0.3

MIL-R-39002

RK

0.5

MIL-R-39015

RTR 22,24

0.2

use lowest value). RL is the total

MJL-R-39015

RTR12

0.3

resistance between the wiper arm and one end of the potentiometer.

MIL-R-39023

RQ

0.3

MIL-R-39035

RJR

0.3

RL2 + KH

RP2 + 2RPRL (

RL

MIL-SPEC

MIL-R-12934

RL2

%FF

—

POTENTIOMETERS

)

Load resistance (If RL is variable,

RJ12

Nominal Total Potentiometer

I

Resistance

%i

-

Style -nstant.

See KH

Table.

9-28

—

———— .--—

MIL-HDBK-217F

9.17

RESISTORS,

EXAMPLE

Example Type RVISAYSA505A vartable 500K ohm resistor procured per MIL-R-94, rated at 0.2 watts is being used in a fixed ground environment. The resistor ambient temperature is 40”C and is dissipating 0.06 watts. The resistance connected to the wiper contact varies between 1 megohm and 3 megohms. The potentiometer is connected conventionally without ganging.

Given:

The appropriate model for RV style variable resistors Is given in Sectbn 9.14. Based on the given infon’natbn the folbwing modei factors are determined fnm the tables shown in Seotbn 9.14 and by foiiowingthe procedure for determining electrical stress for potentiometers as desdbed in Section 9.16.

From Section

9.16

‘APPLIED

.06W

‘EFF

.62

KH . .5 for MIL-R-94 (Section 9.16 Tabie)

1.0

Not Ganged (Section 9.16 Table, Single Section,

%ANGED

First Potentbmeter) ‘RATED

‘APPLIED

s

From Section

.2W

~EFF x ‘GANGED

x ‘RATED

.06 = (.62)(1.0)(.2)

= ‘m

9.14

.047

TA = 40°C, S Rounded to .5

1.4

500K

1.0

3 Taps, Basic Single Potentiometer VRATED = 250 VOttS for RV1 prefu

1.0

ohms

VAPPLIED

= ~ (500,000)(.06)

‘APPLJE#RATED

173 = ~

~ 173 VOftS = ● W

2.5

2.0

% ‘TAPS% (.047)(1.0)(1

‘V ‘Q ‘E .4)(1 .0)(2.5) (2.0) = .33 Failures/l 06 Hours

9-29

——

.

MIL-HDBK-217F

10.1

CAPACITORS,

FIXED,

PAPER,

BY-PASS

SPECIFICATION MII--C-25

STYLE CP

DESCRIPTION Paper, By-pass, Filter, Blocking,

MIL-C-12889

CA

Paper, By-pass, Radio Interference Reduction AC

DC

andl3-Zp = lbZCVXQnE

Failures/l

OG Hours Base Failure Rate - ~

Base Failure Rate - ~

(T.85”c MaxRated)

(T-125%

(All MIL-G-12889:”MIL-C-25 Stvles CP25. 26.27.28.29. 40, 41, 67, 69,70,72, 75, 76,77,78:80:81 i 82: Characteristics E. F)

‘

S&

TA (%]

.1

.3

.00088

.0011

.0036

.015

.051

10

.00089

.0011

.0036

.016

.052

20

.00092

.0011

.0037

.016

.054

30

.00097

.0012

.0039

.017

.057

40

.0011

.0013

.0044

.019

.063

50

.0013

.0016

.0052

.022

.075

60

.0017

.0021

.0069

.030

.10

70

.0027

.0034

.011

.048

.16

80

.0060

.0074

.024

.10

.35

TA (%)

0

\=.00086[(~)5+

T= s

.5

Max Ra!ed)

(MIL-C-25 Styles CP 4,5,8,9, 10, 11, 12 13; Characteristic K)

.1

.3

stress .5

.7

.9

.9

.7

l]exp(2.5(~)18)

o

.00086

.0011

.0035

.015

.051

10

.00087

.0011

.0035

.015

.051

20

.00087

.0011

.0035

.015

.051

30

.00088

.0011

.0035

.015

.051

40

.00089

.0011

.0036

.015

,052

50

.00091

.0011

.0037

.016

.053

60

.00095

.0012

.0039

.017

.056

70

.0010

.0013

.0041

.018

.060

80

.0011

.0014

,0046

.020

.067

90

.0014

.0017

.0056

.024

.081

100

.0019

.0023

.0076

.033

.11

110

.0030

.0037

.012

.052

.18

120

.0063

.0078

.026

.11

.37

Ambient Temperature (“C) =

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied D.C. vottage and peak A.C. voltage.

~=.ooW3[(5)5+ 1]-p(2..(~)’8) T. s

Ambient Temperature (“C) -

Ratio of Operating to Rated Vottage

Operating voftage is the sum of applied D.C. voltage and peak A.C. voltage.

1o-1

I

MIL-HDBK-217F

10.1

CAPACITORS,

FIXED,

PAPER,

BY-PASS

Capacitance Factor- WV -. Capacitance, C (@)

Environment

‘c v

MIL-C-25* .0034 .15 2.3 16.

0.7 1.0 1.3 1.6

MIL-C-12889 All

1.0

Factor - x_

t

Environment

fiE

e~

1.0

GF

2.0

GM

9.0 5.0

Nu

15 6.0

‘Ic ‘IF ●

‘Cv

= 1.2c”095

*UC *UF %w

17 32 22

SF

Quality Factor - Xfi Quality

10-2

8.0

MIL-SPEC

3.0

Lower

7.0

.50

MF

12

ML

32

CL

570

+.-

- ., .

... .,.

.

.

. ... . ... .. .

., .,.

,,,

.

.. ...

..

MIL-HDBK-217F

CAPACITORS,

.10.2

PAPER,

FEED-THROUGH

DESCRIPTION Paper, Metallizecf Paper, Metallized Plastiq RFI Feed-Throuqh Established Reliability and

STYLE CZR and CZ

SPECIFICATION MlL-C-l 1693

FIXED,

Non-Establi;ht?d Reliability Xp = kbZCvZQzE

Failures/l

06 Hours Base Failure Rate - ~

Base Failure Rate - ~

~=

(T=85”c MaxRated) (Char-enstics E, W) TA (“C) o ;; 30 40 50 60 70 80

4

.1 .0012 .0012

.3 .0014 .0015

,0012 .0013 .0014 .0017 .0023 .0037 .0080

.0015 .0016 .0018 .0021 .0028 .0045 .0099

.5 .0047

.7 .020

.9 .069

.0048 .0050 .0053 .0058 .0069 .0092 .015 .032

.021 .021 .023 .025 .030 .039 .064 .14

.070 .072 .076 .084 .10 .13 .21 .47

~=.o.11,[(~)’ +1]..P(2.,(~)18) Ambient Temperature (“C) Ratio of Operating to Rated Voltage

T= s=

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

TA (%)

.1

0

.0012

E 30 40 50 60 70 80 90 100 110 120 130 140 150

.0012 .0012 .0012 .0012 .0012 .0012 .0012 .0013 .0013 .0015 .0017 .0022 .0033 .0058 .014

Base Failure Rate - ~

TA (“C)

.1

o

.0012 .0012 .0012 .0012 .0012 .0012 .0013 .0014 .0015 .0019 .0025 .0040 .0084

;: 30 40 E 70 80 90 100 110

120

\=.00115[(~)’ T. s

=

(T= 125°C Max Rated) (Characteristic K) Sfmss .3 .5 .0014 .0014 ,0014 .0014 .0015 .0015 .0016 .0017 .0019 .0023 .0031 .005 .010

.0047 .0047 .0047 ,0047 .0048 .0049 .0052 .0055 .0062 .0075 .010 .016 .034

~“00115[(~)5+

.9

.020 .020 .020 .020 .021 .021 .022 .024 .027 .032 .044 .07 .15

.068 .068 .068 .069 .070 .072 .075 .08 .09 .11 .15 .24 .49

+ l]w(25(Tjfl)18)

Ambient Temperature (“C) Ratio of Operating to Rated Voftage

Operating vottage is the sum of applied D.C. voltage and peak A.C. voltage.

I

I

s

.3 .0014 .0014 .0014 .0014 .0014 .0015 .0015 .0015 .0016 .0017 .0018 .0022 .0028 .0040 .0072 .017

.5

.7

.9

.0047 .0047 .0047 .0047 .0047 .0048 .0048 .0049 .0051 .0055 .0060 .0071 .0091 .013 .024 .057

.020 .020 .020 .020 .020 .020 .021 .021 .022 .023 ,026 .03 .039 .057 .10 .24

.068 .068 .068 .068 .068 .069 .070 .071 .074 .079 .087 .10 .13 .19 .34 .62

11expF5(-Y

Ambient Temperature (“C)

T=

.7

150”C Max Rated) i~haraeinrktic ,-, ,-, ----- .. ... P} . f

(

=

Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. vottage and peak A,C. voltage.

I

.

MIL-HDBK-217F i

10.2

CAPACITORS,

Capadtance

FIXED,

PAPER,

FEED-THROUGH

Factor-WV

Environment

Capacitance, C (JAF) 0.0031

L 1.0

1.8

1.5

f

I

‘c

Environment

.70

0.061

Factor - XE

v = 1.4c0”’2

Quality Factor - XQ Quality

GB

1.0

GF

2.0

GM

9.0

N~

7.0

Nu

15

*IC

6,0

‘IF

8.0

*UC

17

*UF

28

%w

22

.50

SF M Non-Established Lower

1.0 Reliability

3.0

MF

12

ML

32

c,

10

10-4

I

4

.

MIL-HDBK-217F

10.3 SPECIFICATION MIL-C-14157 MIL-C-19978

CAPACITORS,

PAPER

1P = &cVZQnE

Failures/l

0 ;: 30 40 50 60

.3

.00053 .00055 .00061 .00071 .00094 .0015 .0034

.00065 .00069 .00075 .00088 .0012 .0019 .0042

(-r. e5’’chk Ratacf) ML-C-14157 StvleCPV17: MIL@--19978 Characteristics E, F; G, M)

St?ess .5

.0021 .0022 .0025 .0029 ,0038 .0061 .014

.7 .0092 .0096

.011 .012 .016 .026 .059

.9

.1 .00051 .00052 .00054 .00057 .00063 .00074 .00099 .0016 .0035

.031 .032 .036 .042 .055 .088 .20

~=..oo,[(~)’+1].xp(2..(~)18) Ts-

Ambient Temperature (“C) Ratio of Operating to Rated Voftage

(MIL-C-141 57 StVta CPV09 and MlL-C-l 9978 Chara&teristics K, Q, S) Stress TA (“C) .1 .3 .5 .7 .9

% 80 90 100 110 120

.0020 .0020 .0020 .0021 .0021 .0021 .0022 .0024 .0027 .0033 .0044 .0071 .015

.0087 .0088 .0088 .0089 .009 .0092 .0096 .010 .012 .014 .019 .030 .064

.029 .029 .030 .030 .030 .031 .032 .035 .039 .047 .064 .10 .21

~-.ooW[(~)5+ l]e.p(2.5(*)’8) T= s.

.00063 .00064 .00066 .00070 .00077 .00092 .0012 .0020 .0043

.0021 .0021 .0022 .0023 .0025 .0030 .0040 .0064 .014

.7 .0089 .0090 .0093 .0099 .011 .013 .017 .028 .061

.9 .030 .030 .031 .033 .037 .043 .058 .093 .20

Ambient Temperature (°C) s Ratio of Operating to Rated Voltage Operating voltage is the sum of appiied D.C. voftage and peak A.C. voltage.

(T. 125oCMaxRated)

.00062 .00062 .00062 .00063 .00064 .00066 .00068 .00073 ,00083 .0010 .0013 .0022 .0045

.5

T-

Base Faibre Rate - ~

.00050 .00050 .00051 .00051 .00052 .00053 .00055 .00059 .00067 .00081 .0011 .0018 .0037

.3

~-.wm[(~)s+ l]e.p(2.5(*)18)

Operating voltage is the sum of applied D.C. vottage and pa ak A.C. voltage.

o 10 20 30 40 50

FILM

Oe Hours

stress .1

PLASTIC

Base Failure Rate - ~

Base Failure Rate - ~ (?-=65”c MaxRated) (MIL-C-14157styleCPV07; MlL-C-l9978 Characteristics P, L] TA ~)

AND

DESCRIPTION Paper and Plastk Film, Est. Rel. Paper and Plastk Film, Est. Rel. and Non-Est. Ret.

STYLE CPV CQR and C(2

“

FIXED,

Ambient Temperature (“C) Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. voftage and peak A.C. voltage.

‘A (%) o

Y 30 40 :: :: 90 100 110 120 130 140 150 160 170

Base Failure Rate - ~ (T= 170”C Max Rated) (MIL-C-1 9978 Characteristic T) Stress .1 .3 .5 .7 .00050 .00050 .00050 .00050 .00050 .00050 .00051 .00051 .00052 .00054 .00056 .00060 .00067 .00079 .0010 .0015 .0026 .0061

~=.0005[(~)5+

.00062 .00062 .00062 .00062 .00062 .00062 .00063 .00063 .00065 .00066 .00069 .00074 .00083 .00098 .0013 .0018 .0032 .0075

.0020 .0020 ,0020 .0020 .0020 .0020 .0021 .0021 .0021 .0022 .0023 .0024 .0027 .0032 .0041 .006 .011 .025

,0087 .0087 .0087 .0087 .0087 .0088 .0088 .0089 .0091 .0093 .0097 .010 .012 .014 .018 .026 .046 .11

.9 .029 .029 .029 .029 .029 .030 .030 .030 .031 .031 .033 .035 .039 .046 .060 .087 .15 .36

1].xp(2.5(*)18)

. T = Ambient Temperature ~C) s= Ratio of Operating to Rated Voftage Operating vottage is the sum of applied D.C. vottage and Desk A.C. voltaae.

10-5

.

.

MIL-HDBK-217F

10.3

CAPACITORS,

FIXED,

PAPER

AND

PLASTIC

FILM

Environment

-. Capacitance, C @F)

MIL-C-14157: .0017 .027 .20 1.0

I

*CV

●

.70 1.0 7.3 1.6

MIL-C-19978: w .00032 .033 1.0 15.0 ●

●

.70 1.0 1.3 1.6

‘Cv = 1.6C0”13 “ 7tcv = 1.3C

0.077

~Q

s

.03

R

.10

P

.30

M

1.0

L

3.0

Lower

10-6

Non-Est.

%E

GB

1.0

GF

2.0

GM

8.0

Ns

5.0

Nu

14

%c

4.0

‘IF

6.0

*UC

11.0

*UF

20

*RW

20

Rel.

10 30

.50

MF

11

ML

29

c’

Quality

9978,

Environment

SF

Quality Factor - nQ

MlL-C-l

Factor - XE

530

MIL-HDBK-217F

10.4

CAPACITORS,

FIXED,

SPECIFICATION MIL-C-18312 MI L-C-39022

METALLIZED

PAPER,

Base Failure Rate - ~ (T-85”c MaxRated) (MIL-C-39022Charactertatic 9 and 12 (50 Voltsrated]. ~ (%)

eristic 49; and MlL-C-l 8312 Characteristic R)” stress .1 .5 .7 .9 .3

.00070

.00087

.0029

.012

.041

10

.00072

.00089

.0029

.012

.042

20

.00074

.00091

.0030

.013

.043

30

.00078

,00097

.0032

.014

.046

40

.00086

.0011

.0035

.015

.051

50

.0010

.0013

.0041

.018

.06

60

.0014

.0017

.0055

.024

.08

70

.0022

.0027

.0089

.038

.13

80

.0048

.0059

.019

.084

.28

o

~=.WW9[(~)5+

l]exp(2.5

AND

PLASTIC

DESCRIPTION Metallized Paper, Paper-Plastic, Plastic MetalJized Paper, Paper-Plastic, Plastic, Established Reliabifii

STYLE CH CHR

kp = kbTCCvXQxE Failures/l

Chara

PAPER-PLASTIC

OG Hours Base Failure Rate - ~

(T=1250CMax Rated) (MIL-C-39022 Char~eristic 9 and 12 (above 50 Votts ratedl Characteristics 1.10, 19, 29, 59; and “.MlL-C-l8312 Chara%istic N) Strass .1 .3 .7 .9 .5 TA (~) o

.00069

.00086

.0028

.012

.041

10

.00069

.00086

.0028

.012

.041

20

.00070

.00086

.0028

.012

.041

30

.00070

.00087

.0028

.012

.041

40

.00071

.00088

.0029

.012

.042

50

.00073

.00090

.003.

.013

.043

60

.00076

.00094

.0031

.013

.04s

70

.00082

.0010

.0033

.014

.048

80

.00092

.0011

.0037

.016

.054

90

.0011

.0014

.0045

.019

.065

100

.0015

.0019

.0061

.026

.088

110

.0024

.0030

.0098

.042

.14

120

.0051

,0063

.020

.088

.30

(=)18)

T.

Ambient Temperature (“C)

s-

Ratio of Operating to Rated Voltage

Operating voftage is the sum of applied D.C. voltage and peak A.C. voltage.

\=.00069[(~)’+ T= S

l]exP(2.5

(=)18)

Ambient Temperature (“C) =

Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

MIL-HDBK-217F

10.4

CAPACITORS,

Capadtance

FIXED,

METALLIZED

PAPER,

PAPER-PLASTIC

AND

PLASTIC

Emkmment Factor -xc

Factor - wv

b

Capacitance, C @F)

‘c v .70

0.0029 0.14

1.0

2.4

1.3

Zcv = 1.2C

Environment GB

1.0

GF

2.0

%

8.0

NS

5.0

Nu

0.092

*IC ‘IF *UC

Quality Factor - Xn u

7CQ

Quality

~E

14 4.0 6.0 11.0

*UF

20

‘RW

20

s

0.03

SF

R

.10

MF

11

P

.30

ML

29

CL

530

M

1.0

L

3.0

MIL-C-18312, Lower

Non-Est.

Rel.

7.0 20

.50

MIL-HDBK-217F

10,5 SPECIFICATION MIL-C-55514

CAPACITORS,

FIXED,

PLASTIC

AND

STYLE

DESCRIPTION

CFR

Plastic, Metallized

Xp = kbXcvXQzE

Failures/l

METALLIZED

PLASTIC

Plastic, Est. Rel.

OG Hours

Base Failure Rate - ~ (T= 12SOCMax Rated) (Charadari@im \ -. -------- .-. .— 0-,

(Characteristics M, N’)

TA (%)

.1

.3

R , ., !%) - t

Strws .5

.5

.7

.9

TA (“C)

.1

.3

.00099

.0012

.7

.9

.0040

.017

.058

o

.0010

.0012

.0041

.018

.059

0

10

.0010

.0013

.0042

.018

.060

10

.0010

.0012

.0040

.017

.058

20

.0011

.0013

.0043

.018

.062

20

.0010

.0012

.0041

.017

.059

30

.0011

.0014

.0045

.020

.066

30

.0010

.0012

.0041

.018

.059

40

.0012

.0015

,0050

.022

.073

40

.0010

.0013

.0041

.018

.060

50

.0015

.0018

.0059

.026

.086

50

.0011

.0013

.0043

.018

.062

60

,0020

.0024

.0079

.034

,11

60

.0011

.0014

.0044

.019

.064

70

.0032

.0039

.013

.055

.18

70

.0012

.0015

.0048

.020

.069

80

.0069

.0085

.028

.12

.40

80

.0013

.0016

.0054

.023

.077

90

.0016

.0020

.0065

.028

.094

100

,0022

.0027

.0087

.038

.13

110

.0035

.0043

.014

.06

.20

120

.0073

.0090

.029

.13

.43

~=.00099[(:)5+

l]exP(2.5

(%)18)

T=

Ambient Temperature (“C)

s=

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied C).C. voftage and peak A.C. voltage,

\=.00099[(;)5+

1].XP(2.5

(-)18)

T=

Ambient Temperature (“C)

s-

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied D.C. voltage and peak A.C. voftage. i

. .

,..

MIL-J+DBK-217F

CAPACITORS,

10.5

FIXED,

PLASTIC

AND

METALLIZED

Environment Factor - n=

Capacitance Factor - WV Capacitance, C (jLF)

I

L

.70

0.33

1,0

7.1

1.3

7CCV=1.1 C

~E

Environment

~cv

0.0049

GB

1.0

GF

2.0 10

GM

5.0

Ns

1.5

38.

PLASTIC

0.085

Nu

16

Alc

6

%

11

%c

18 30

*UF Quality Factor - ZQ Quality

~Q

s

.030

R

.10

P

.30

23

‘RW

.50

SF MF

13

ML

34 610

cL

1.0

M

10

Lower

1o-1o

1

I

I

,--

1

n—I—

—--A

A.-

/

MIL-HDBK-21

10.6 SPECIFICATION MIL-C-63421

CAPACITORS,

7F

FIXED,

STYLE

DESCRIPTION

CRH

Super-Metallized Plastic, Est. Rel. 1P = kbXCvZQnE

Failures/l

(T= 125°C Max Rated) stress .1 .3 .5

:: 30 40 50 60 70 80 90 100 110 120

.00055 .00055 .00056 .00056 .00057 .00058 .00061 .00065 .00073 .00089 .0012 .0019 .0040

.00068 .00068 .00069 .00069 .00070 .00072 .00075 .00081 .00091 .0011 ,0015 .0024 .0050

,0022 .0022 .0023 .0023 .0023 .0024 .0025 .0026 .0030 .0036 .0049 .0078 .016

Capacitance Factor - WV t

.7

.9

.0096 .0096 .0097 .0098 .0099 .010 .011 .011 .013 .015 .021 .033 .070

.032 .032 .033 .033 .033 .034 .036 .038 .043 .052 .07 .11 .24

Capacitance,

C (vF)

+ 1].XP(2.5

(~)”

‘Cv

.001

.64

0.14

1.0

2.4

1.3

23

ncv

1.6

= 1 .2C

0.092

Environment ~=.00055[(~)5

PLASTIC

OG Hours

Base Failure Rate - ~

o

SUPER-METALLIZED

;

I

Factor - X_

Environment

GB T.

Ambient Temperature (“C)

GF

4.0

s=

Ratio of Operating to Rated Vottage

GM

8.0

Ns

5.0

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

Quality Factor - ZQ

Quality

7tQ

s

.020

14

Alc

4.0

‘IF

6.0

‘Uc

13.0

‘UF

20

fhv

20

R

.10

sF

P

.30

MF

11

ML

29

M Lower

. . —.

Nu

1.0 10

CL

—— ———

.50

530

t

MIL-HDBK-217F

10.7

CAPACITORS,

FIXED,

MICA

SPECIFICATION MIL-C-5

STYLE CM

DESCRIPTION MICA (Dipped or Molded)

MIL-C-39001

CMR

MICA (Dipped), Established Reliability Ap = LbZCvZQzE

Failures/l

BaseFailure Rate - ~ (T=70”C Max Rated) (MIL-G5, Temp. Range M) stress .1 .3 .5

TA ~)

T

.00030 .00047 .00075 .0012 .0019 .0031 .0049 .0078

10 20 30 40 50 60 70 ~=

8.6x10-10

.00041 .00066 .0011 .0017 .0027 .0043 .0068 .011 [(3)3

.00086 .0014 .0022 .0035 .0056 .0089 .014 .023

I .7 .0019 .0030 .0047 .0075 .012 .019 .030 .049

+ I]exP(16

.9

TA (“C)

.0036 .0058 .0092 .015 .023 .037 .059 .095

(~)

0 10 20 30 40 50 60 70 80

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

s.

TA (“C) o 10 20 30 40 50 60 70 80 90 100 110 120 ~b= T= s=

.00005 .00008 .00011 .00017 .00025 .00038 .00057 .00085 .0013 .0019 .0028 ,0042 .0063

.00007 .00011 .00016 .00024 .00036 .00053 .0008 .0012 .0018 .0027 .0040 .0059 .0089

8.6)( 10-10 [(3)3+

.00015 .00022 .00033 .00050 .00074 .0011 .0017 .0025 .0037 .0055 .0083 .012 .018 jeW(16

8.6 XW1O

[(~)3+

.7

.00051 .00079 .0012 .0010 .003 .0047 .0074 .012 .018

.0011 .0017 .0027 .0042 .0065 .010 .016 .025 .039

1]W(16

(w)

.9 .0021 .0033 .0052 .0081 .013 .020 .031 .048 .076 )

Ambient Temperature (oC) Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

n=1500C Temp. Ranqe 0) .7

.00032 .00048 .00071 .0011 .0016 .0024 .0036 .0053 .008 .012 .018 ,027 .040

.9 .00062 .00093 .0014 .0021 .0031 .0046 .0069 .010 .016 .023 .035 .052 .077

(%%))

Ambient Temperature (“C) Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. voltage and pa ak A.C. voltage.

10-12

.00024 .00038 .00059 .Ooow .0015 .0023 .0036 .0056 .0087

Base Failure Rate - ~

Base Failure Rate - ~ (T=125°CMax Rated)

f!fwi

.00017 .00027 .00042 .00066 .0010 .0016 .0025 .0040 I .0062

T= s.

Operating vottage is the sum of applied D.C. voltage

Temp. Range O; MIL-C-39001 Stress .1 .3 .5

Base Failure Rate - ~ (T=850C Max Rated) (MIL-C-5, Temp. Ran@ N) stress .1 .3 .5

) lb=

T.

OG Hours

Max Rated)

UY!!kQsTemp.R-ange P; MIL-C-39001, TA (“C)

.1

.3

o 10 20 30 40

.00003 .00004 .00006 .00008 .00012 .00018 .00026 .00038 .00055 .0008 .0012 .0017 .0025 .0036 .0053 .0078

.00004 .00005 .00008 .00012 .00017 .00025 .00036 .00053 .00077 .0011 .0016 .0024 .0035 .0051 .0074 .011

% 70 80 90 100 110 120 130 140 150

Ab= S.6XIO-10[(33+

stress .5

.00008 .00011 .00017 .00024 .00035 .00051 .00075 .0011 .0016 .0023 .0034 .0050 .0073 .011 .015 .023 1].XP(16

Temp. Ranqe P) .7

.9

.00017 .00024 .00036 .00052 .00076 .0011 .0016 .0024 .0034 .0050 .0073 .011 .016 .023 .033 .049

.00033 .00047 .00069 .0010 .0015 .0022 .0031 .0046 .0067 .0098 .014 .021 .030 .044 .065 .095

(7;;?)

)

Ambient Temperature (“C) T= Ratio of Operating to Rated Voftaqe sOperating voltage is the s~m of applied D.C. voltage and peak A.C. voltage.

* ,.

MIL-HDBK-217F

10.7

CAPACITORS,

FIXED,

MICA

Capacitance Factor - ~V

Environment Factor - z=

Capacitance, C (pF)

‘Cv

2

.50

38

.75

300

1.0

2000

1.3

8600

106

29000

1,9

Environment GB

1.0

GF

2.0 10

% Ns

6.0 16

Nu

84000

I

‘Cv

2.2

= 0.45C”4

%c

5.0

‘IF

7.0

‘Uc

22

‘UF

28

%nN

23

SF

Quality Factor - nQ Quality T

.010

s

.030

R

.10

P

.30

M

1.0

L

1.5

MIL-C-5, Non-Est. Rel. Dipped

3.0

MIL-C-5, Non-Est. Ref. Molded

6.0

Lower

.50

MF

13

ML

34

c1

610

15

10-13

n

r-

--

...:--

r---

----

L

nu.

MIL-HDBK-217F

10.8

CAPACITORS,

FIXED,

SPECIFICATION MIL-C-1095O

MICA,

—

BUTTON

DESCRIPTION MICA, Button Style

STYLE CB

Xp = LbZCvXQnE

Failures/l

OG Hours

Base Failure Rate - ~

Base Failure Rate - ~

(T= 85°C Max Rated)

(T= 150”C Max Rated) fAll Fxrxmt ----CR50\ \ . ....-TvoP=------

(Stvle CB50)

‘s&-

.1

.3

.5

.7

.9

TA (“C)

.1

.3

0

.0067

.0094

.019

,042

.082

0

.0058

.0081

10

.0071

.0099

.021

.044

.086

10

.0059

20

.0076

.011

.022

.047

.092

20

30

.0082

.011

.024

.051

.10

40

.009

.013

.026

.056

50

.010

.014

.029

60

.012

.016

70

.013

.019

TA (Z)

::00

5~~~~)~~l]ex~72

stress .5

1

.7

.9

.017

.036

.071

.0083

.017

.037

.072

.0061

.0085

.018

.038

.074

30

.0062

.0087

.018

.039

.076

.11

40

.0064

.009

.019

.040

.079

.063

.12

50

.0067

.0094

.019

.042

.082

.033

.072

.14

60

.0070

.0098

.020

.044

.086

.039

.084

.16

70

.0074

.010

.022

.046

.090

80

.0079

.011

.023

.049

.096

90

.0085

.012

.025

.053

.10

100

.0093

.013

.027

.058

.11

110

.010

.014

.03

.064

.12

(~-

T.

Ambient Temperature (“C)

120

.011

.016

.033

.072

.14

s=

Ratio of Operating to Rated Voltage

130

.013

.018

.038

.082

.16

140

.015

.021

.044

,095

.18

150

.018

.025

.052

.11

.22

Operating vottage is the sum of applied D.C. voltage and peak A.C. voltage.

k

i

~=

.0053 [(~)3

+ l]exP(l.2

(T~~~)63)

T=

Ambient Temperature (°C)

s==

Ratio of Operating to Rated Voftage

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage. c

10-14

*

MIL-HDBK-217F

10.8

CAPACITORS,

FIXED,

MICA,

BUTTON

Environment Factor - X.

Quality Factor - ZQ

t

Quality

ftQ

MIL-C-1095O

5.0

Lower

h

,

Environment GB

1.0

GF

2.0

15

Capacitance Factor - ~v

k

Capacitance, C (pF)

GM Ns

10

Nu

16

5.0

‘Cv

AC

5.0

8

.50

‘IF

7.0

50

.76

*UC

22

‘UF

28

‘RW

23

160

1.0

500

1.3

SF

1200

1.6

MF

13

2600

1.9

ML

34

5000

2.2

cL

‘Cv

.50

610

= .31c0”23

. =——n—-—-—==—-=-—c=.=—=——s—-———————ee—..-

10-15

-

_m_—-

.

. .

..

_._.._. ~== _.

MIL-HDBK-217F

II I

, I

I

10.9

CAPACITORS,

FIXED,

SPECIFICATION MlL-C-l 1272 MIL-C-23269

GLASS

— DESCRIPTION GIass Glass, Established Reliability

STYLE CY CYR

Ap = kbnCVTCQnE Failures/l

OG Hours

Base Faiture Rate - ~

Base Failure Rate - & (T= 200°C Max Rated) (MIL-C-1 1272 Ternp Range D) & .1 .3 .5 .?

(T=125°C Max Rated)

WL!!!!! C-23296

and MlL-C-l 1272 Temp. Range Cl Stm’ss

TA (%; o 10

.3

.5

.7

.9

.00005

.00010

.00023

.0005!

.1 .00005 .00007

.00008

.00014

.00035

.00008

.00019

.00011

.00027

.00032

.00078

.0018

.0017

.00018

.00044

.00013

.00014

.00025

.00061

.0015

90

.00018

.00020

.00035

.00086

.0020

100

.00025

.00028

.00050

.0012

.0029

110

.00035

.00039

.00070

.0017

.0040

120

.00049

.00055

.00098

.0024

.0056

.0039

.0092

80

.0012

.0014

.0024

,0058

.014

90

.0018

.0020

.0036

.0087

.021

100

.0027

.0030

.0054

.013

.031

110

.0040

.0045

.0080

.019

.046 .069

(T;%)

Ratio of Operating to Rated Vottage

.00074

80

.0016

s=

.00031

.0041

.00091

Ambient Temperature (“C)

.00013

.0010

.0008

T=

.00053

.00007

70

+ 1].xlp

.00038

,00022

.00010

.0062

‘b = 8.25X lo-fo [(:)4

.00016

.00009

.00006

.0026

.029

.00007

.00005

.00009

.0011

.012

.00004

.00005

60

.00061

.0068

.00003

50

70

.00054

.0060

40

.0028

60

120

.00014

.00003

.00018

.00072

.00006

.00005

.00016

.00041

.00002

.00002

30

.00036

.00010

.00001

.00003

.0012

50

.00004

.00001 .00002

.00052

.0012

.Oooo1 .00002

10

.00002

.00022

.00048

.00001

20

.00012

.00027

o

30

.00011

.00024

.9

.0008

20

40

TA (“C

Operating voltage is the sum of applied D.C. vottage and peak A.C. voltage.

)

130

.00069

.00078

.0014

.0033

.0079

140

.00096

.0011

.0019

.0047

.011

150

.0014

.0015

.0027

.0065

.016

160

.0019

.0021

.0038

.0092

.022

170

.0027

.0030

.0053

.013

.031

180

.0037

.0042

.0075

.018

.043

190

.0052

.0059

.010

.025

.060

200

.0073

.0083

.015

,035

,084

$=

8.25x

I0 -q(:)4+

1]W(16

(%%)

T=

Ambient Temperature (“C)

s.

Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C, voltage and peak A.C. voltage.

)

Ml13HDBK-217F

10.9

‘Cv

1

.62

4

.75

Environment

~E

GB

1.0

GF

2.0

GM

10

30

1.0

Ns

200

1.3

Nu

900

1.6

AC

5.0

3000

1.9

‘IF

7.0

8500

2.2

‘Cv = 0.62C0”14

Quality Factor -

6.0 16

*UC

22

*UF

28

‘RW

23

SF

.50

MF

13

ML

34

CL

610

~Q

Quality

~Q

s

.030

R

.10

P

.30

M

1.0

L

3.0

MlL-C-l 1272, Non-Est. Rel.

3.0

Lower

GLASS

FIXED,

Environment Factor - ZE

Capacitance Factor - ~,v -. Capacitance, C (pF)

CAPACITORS,

10

10-17

7F

MJL-HDBK-21

10.10

s

CAPACITORS,

FIXED,

3ECIFICATION

CERAMIC,

GENERAL

STYLE GK CKR

M !L-C-11015 M L-C-39014

—

PURPOSE

DESCRIPTION Ceramk, General Puqxxe Ceramk, General Purpose, Est. Rel.

Lp = kbZcvZQnE

Failures/l

Base Failure Rate - ~ (T= 850C Max Rated) AIL-C31014 Styles CKR13, 48, 64, 72; IL-C-I 1015 Type A Rated Temperature)

OG Hours Base Failure Rate - ~ (T =1500C Max Rated) ItL-C-l 1015 T ype C Rated Temperature)

I

TA (W o 10 20 30 40 50 60 70 80

.1

.3

.5

.7

.9

.00067 .00069 .00071 .00073 .00075 .00077 .00079 .00081 .00083

.0013 .0013 .0014 .0014 .0014 .0015 ,0015 .0016 .0016

.0036 .0037 .0030 .0039 .004 .0042 .0043 .0044 .0045

.0088 .0091 .0093 .0096 .0099 .010 ,010 .011 .011

.018 .019 .019 .020 .020 .021 .021 .022 .023

L

.7

.9

.3

o

.00059

.0011

.0032

.0078

.016

10

.00061

.0012

.0033

.00’8

.016

20

.00062

.0012

.0034

.0082

.017

30

.00064

.0012

.0035

.0084

.017

40

.00065

.0013

.0035

.0086

.018

50

.00067

.0013

.0036

.0088

.018

. %-

0003[(33 “18X’(T= )

60

.00068

.0013

.0037

.009

.018

T= s=

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

70

.00070

.0013

.0038

.0092

.015

80

.00072

.0014

.0039

.0095

.019

90

.00073

.0014

.0040

.0097

.020

100

.00075

.0014

.0041

.0099

.020

110

.00077

.0015

.0042

.010

.021

120

.00079

.0015

.0043

.010

.021

130

.00081

.0016

.0044

.011

.022

140

.00083

.0016

.0045

.011

.022

150

.00085

.0016

.0046

.011

.023

Operating vottage is the sum of applied D.C. voltage and peak A,C. voltage.

‘A

.5

.1

Base Failure Rate - ~ (T= 125°C Max Rated) (MIL-C-39014 Styles CKR05-12, 14-19, 73, 74; IL-C- I 1015 Type B Rated Temperature) stress .1 .3 .5 .7 .9 (=) o

10 :: 40 50 60 70 80 90 100 110 120

. ‘b = T= s.

.00062 .00063 .00065 .00067 .00068 .00070 .00072 .00074 .00076 .00077 .00079 .00081 .00084

.0012 .0012 .0013 .0013 .0013 .0014 .0014 .0014 .0015 .0015 .0015 .0016 .0016

.0033 .0034 .0035 .0036 .0037 .0038 .0039 .0040 .0041 .0042 .0043 .0044 .0045

.0082 .0084 .0086 .0088 .0090 .0093 .0095 .0097 .010 .010 .010 .011 .011

.017 .017 .018 .018 .018 .019 .019 .020 .020 .021 .021 .022 .023

ooo’[(~)’+11“p(=)

\

-

0003[(33+11‘xp

T-

Ambient Temperature (“C)

s.

Ratio of Operating to Rated Vottage

Operating vottage is the sum of applied D.C. voltage and peak A.C. voltage.

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C. vottage and peak A.C. voltage.

NOTE: The rated temperature designation (type A, B, or C) is shown in the pan number, e.g., CKG1AW22M).

MIL-HDBK-217F

I

10.10

CAPACITORS,

FIXED,

CERAMIC,

GENERAL

PURPOSE

Environment Factor - n=

Capacitance Factor - WV

L

Capacitance, C (pF)

~cv

6.0

.50

GF

2.0

GM

9.0

Ns

5.0

1.0

36,000

1.3

Nu

240,000

1.6

Ac

4.0

1,100,000

1.9

‘IF

4.0

2.2

‘Uc

8.0

4,300,000

0.11

15

*UF

12

*RW

20

SF

Quality Factor - n=

Quality

s

.030

R

.10

P

.30

M

1.0

L

3.0

MlL-C-l 1015, Non-Est. Rel.

3.0

.

1.0

3300

Xcv = .41C

Lower

GB

.75

240

I

Environment

.40

MF

13

ML

34

c1

610

10

4

10-19

MIL-I-IDBK-217F

10.11

CAPACITORS,

FIXED,

CERAMIC,

SPECIFICATION MIL-C-20

STYLE CCR and CC

MIL-C-55681

CDR

I

TEMPERATURE

COMPENSATING

DESCRIPTION Ceramic, Temperature Compensating, and Non Est. Rel. Ceramic, Chip, Est. Rel.

lp = kbZcVXOzE

Failures/l

(MIL-C

)

.1

.3

.00015 .00022 .00033 .00049 .00073 .0011 .0016 .0024 .0036

.00028 .00042 .00063 .000!34 .0014 .0021 .0031 .0046 .0069

~~ W) 10 20 30 40 E 70 80

T. s-

.00080 .0012 .0018 .0026 .0039 .0059 .0088 .013 .019

1].XP(14.3

= 2.6x1O -9[(:)3+

\

Stress .5

.7 .0019 ,0029 .0043 .0064 .0096 .014 .021 .032 .047

(T;3

E 30 40 50 60 70 80 90 100 110 120

~=

2.6x10 T= s.

‘g[(~)’+

.00027 .00038 .00055 .00078 .0011 .0016 .0023 .0033 .0047 .0068 .0097 .014 .020 l]exp(143

.00065 .00093 .0013 .0019 .0027 .0039 .0056 .008 ,011 .016 .024 .034 ,048 (TJ~T

.0040 .0059 .0088 .013 .020 .029 .044 .065 .097

)

I ,

2.2

I

I \

Quality

~Q

s

.030 .10 .30 1.0 3.0

R P M Non-Est. Lower

Rel.

I

Environment

Factor - XE ~E

I

I

GB

1.0

GF

2.0 10

% N~

5.0

Nu

17

%c

4.0

‘IF

8.0

*UC

16

*UF

35

*RW

24

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

I

1

.50

SF

)

4

10 Environment

.0013 .0019 .0027 .0039 .0056 .008 .011 .016 .023 .034 .048 .069 .099 )

I

I

.75 1.0 1.3 1.6 1.9

Quality Factor - XQ )1

Operating vottage is the sum of applied D.C. voftage and peak A.C. voltage.

I0-20

7 81 720 4,100 17,000 58;000 0.12 Zcv = .59C

.9

Base Failure Rate - ~ (T= 125oC Max Rated) (MIL-C-20 Styles CC 5-9,13-19,21,22,26,27, 31,33, 36, 37, 47, 50-57, 75-79, 81-83, CCR 05-09,13-19, 5457, 75-79, 81-83, 90; MIL-C-55681 All CDR Styles) Stress TA (“C) .1 .3 .5 .7 .9 .00009 .00014 .00019 .00028 .00040 .00057 .00082 .0012 .0017 .0024 .0034 .0049 .0071

‘Cv .59

1

Ambmnt Temperature (%) Ratio of Operating to Rated Voltage

.00005 .00007 .00010 .00014 .00021 .00030 .00042 .00061 .00087 .0012 .0018 .0026 1 .0037

Est.

Capacitance, C (pF)

L

45, 85, 95-97)

Operating vottage is the sum of applied D.C. vottage and maak A.C. vottaoe.

0

–

Capacitance Factor - ~,v

Max Ratecf)

Stybs CC 20,25,30,32,35,

CHIP

OG Hours

Base Failure Rate - ~

(r-85%

AND

MF

13

ML

34

I

610

I

MIL-HDBK-217F

10.12 SPECIFICATION MIL-C-39003

CAPACITORS,

FIXED,

z

n Failures/l Q E

~ (“c)

.1

.3

.5

.7

o

.0042 .0043 .0045 .0048 .0051 .0057 .0064 .0075 .0092 .012 .016 .024 .039

.0058 .0060 .0063 .0067 .0072 .0079 .009 .011 .013 .017 .023 .034 .054

.012 .012 .013 .014 .015 .016 .019 .022 .027 .034 .047 .07 .11

.026 .027 .028 .030 .032 .035 .040 .047 .050 .074 .10 .15 .24

T. s=

.

OG Hours

Circuit Resistance, CR (ohms/vott)

Stress

Lb = .00375 [(~)3

SOLID

Series Resistance Factor - Zsl

Base Failure Rate - ~

90 100 110 120

TANTALUM,

DESCRIPTION Tantatum Electrolytic (Solid), Est. Ret.

STYLE CSR

‘P = %mCV%R

10 20 30 40 50 60 70 80

ELECTROLYTIC,

1]..p(2.6

% R

.9 .051 .052 .055 .058 .0’63 .069 .078 .092 .11 .14

>0.8

.066

>0.6 to 0.8

.10

>0.4 to 0.6

.13

>0.2 to 0.4

.20

>0.1

.27

to 0.2

0 to 0.1

(T~&

)

‘

)

CR

.33

= Eff. Res. Between Cap. and Pwr. Supply Voltage Appiied to Capacitor

Ambient Temperature (“C) Ratio of Operating to Rated Vottage

operating votiage is the sum of applied D.C. vohage and peak A.C. voltage.

Envimment

Factor - YC= L

Environment

Capacitance Factor - WV Capacitance, C @F)

‘Cv 0.5 .75 1.0 1.3 1.6 1.9

.003 .091 1.0 8.9 50 210 710

n~v = 1 .Oc

0.12

Quality Faotor-x. ●

Quality D

c s

B R P M L Lower

u

+%-I 0.010 0.030 0.030 0.10 0.30 1.0 1.5 10

GB

1.0

GF

2.0

%

8.0

NS

5.0

Nu

14

AC

4.0

‘IF

5.0

*UC

12

*UF

20

‘RW

24

SF

.40

MF

11

ML

29

CL

530

MIL-HDBK-217F

10.13

CAPACITORS,

FIXED,

ELECTROLYTIC,

NON-SOLID

DESCf IPTION Tantalw 1, Electr’olyk (Non-Solid) Tantalw I, Electrolytic (Non-Solid),

STYLE CL CLR

SPECIFICATION MIL-C-3965 MIL-C-39006

TANTALUM,

kp = kbXcVZCXQxE

Failures/l

06 Hours Base Failure Rate - ~

Base Failure Rate - ~

(T= 175eC Max Rated) tllL-C-3965 Sty Ies CL1O, 13, 14, 16-18)

(-r = 85°C Max Rated) (MIL-C-3965 Styles CL24-27, 34-37) TA (“C)

.1

0 10 20 30 40 50 60

.0021 .0023 .0026 .0030 .0036 .0047 .0065

.3 .0029 .0032 .0036 .0042 .0051 .0066 .0091

Est. Rel.

stress .5 .0061 .0067 .0075 .0087 .011 .014 .019

TA (%

.7

.9

.013 .014 .016 .019 .023 .029 .041

.026 .028 .031 .036 .044 .057 .079

.1

.3

.5

.7

.9

o

.0017

.0024

.0050

.011

.021

10

.0017

.0024

.0051

.011

.021

20

.0018

.0025

,0052

.011

.022

30

.0018

.0025

.0053

.011

.022

40

.0019

.0026

.0054

.012

.023

50

.0019

.0027

.0056

.012

.023

60

.002

.0028

.0058

,013

.024

70

.0021

.0030

.0062

.013

.02L

80

.0023

.0032

.0066

.014

.028

90

.0025

.0035

.0072

.016

.030

100

.0028

.0039

.0080

.017

.034

110

.0032

.0044

.0092

.020

.039

120

.0037

.0052

.011

.023

130

.0046

.0064

.013

.029

140

.0059

.0082

.017

.037

150

.0079

.011

.023

.049

160

.011

.016

.033

.071

170

.018

.025

.051

~~ool~

T s.

=

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

Base Failure Rate - ~ (T= 125°C Max Rated) (MIL-C-3965 Styles CL20-23, 30-33, 40-43, 46-56, 64i7, 70-73; and all MI L-C-39006 Styles) Stress .7 .9 ,1 .3 TA (“C) .5

o 10 20 30 40 50 60 70 80 90 100 110 120

.0018 .0019 .0020 .0021 .0023 .0025 .0028 .0033 .0041 ,0052 .0071 .011 ,017

Ab=.00165[(~)3+ T= s.

.0026 .0026 .0028 .0029 .0032 .0035 .0040 .0046 .0057 .0073 .010 .015 .024

.0053 .0055 .0057 .0061 .0066 .0072 .0082 .0096 .012 .015 .021 .031 .050

l]exp(2.6

.011 .012 .012 .013 .014 .016 .018 .021 .025 .033 .045 .066 .11 (Tj~~

.022 .023 .024 .026 .028 .030 .034 .040 .049 .084

kb=.00165[(~)3+ )

‘0

)’-0)

)

Ambient Temperature (“C) Ratio of Operating to Rated Vottage

Operating vottage is the sum of applied D.C. voltage and peak A.C. voltage.

10-22

l]exp(2.6(~

T.

Ambient Temperature (“C)

s=

Ratio of Operating to Rated Vottage

Operating voltage is the sum of apphed D.C. voftagc and peak A.C. voltage.

I

MIL-HDBK-217F

10.13

I

Capadtanoe

I I

I

CAPACITORS,

Capadance, C (p.F)

I

.091

I

Constmction

~cv .70 1.0 1.3

Factor - ~

Type

Quality

s

.030

R

.10

P

.30

M

1.0

L

1.5

MIL-C-3965,

●

● ●

NON-SOLID

Non-Est. Rel.

3.0

7CC

I

Slug, All Tantalum Foil, Hermetic’ Slug, Hermetic Foil, Non-Hermetic Slug, Non-Herrnetk

TANTALUM,

Quality Factor - nfi

WV = .82C0”066

Construction

ELECTROLYTIC,

Factor - ~v

20 1100

I

FIXED,

10

Lower

.30 1.0 2.0 2.5 3.0

Environment

Factor - z= L

Environment

●Type

of Seal Identified as Follows:

GB

1.0

GF

2.0

1) MIL-C-3965 (CL) - Note Last Letter in Part Number: G - Hermetio E - Non-Hermetic

GM

Example: CL1 OBC700TPQ is Hermetic

Ns

2) MIL-C39006 (CLR) - Consult Individual Part Specification Sheet (slash sheet)

Nu

NOTE: Foil Types -

CL 20-25,30-33,40,41,51 CLR 25,27,35,37,53,71,73

-54, 70-73

Slug Types - CL 10, 13, 14, 16, 17, 18,55,56, 64-66, 67 CLR 10, 14, 17,65, 69,89 All Tantalum - CL 26,27,34-37,42,43, CLR 79

46-49

fiE

10 6.0 16

Ac

4,0

‘IF

8.0

‘Uc

14

‘UF

30

‘RVV

23

SF

.50

MF

13

ML

34

cL

610

10-23

MIL-HDBK-217F

10.14

CAPACITORS,

FIXED,

ELECTROLYTIC,

DESCRIPTION Ektrolytic, Aluminum Oxide, Est. Rel. and Non-Est. Rel.

STYLE CUR and CU

SPECIFICATION MIL-C-39018

—

ALUMINUM

Lp = kbZCvmQzE

Failures/l

06 Hours Base Faiture Rate - ~

Base Failure Rate - ~

(T= 125°C Max Rated) (All h L-C-3901 8 Styles Except 71, 16 and 17) stress TA (~) .1 .5 .7 .9 .3

(T= 85°C Max Rated) [M IL-C-39018 stvle 71 ~

Stfws T* (%) 0 ;: 30 40 50 60 70

;=.O

.1

.3

.5

.7

.0095 .012 .017 .023 .034 .054 .089 .16

.011 .015 .020 .028 .042 .065 .11 .19

.019 .024 .033 .046 .068 .11 .18 .31

.035 .046 .062 .087 .13 .20 .33 .58

o:[(~;~+

.9 .064 .084 .11 .16 .23 .36 .60 1.1 .

l]:;~.og’;-;’

)

T=

Ambient Temperature (“C)

s-

Ratio of Operating to Rated Voftage

Operating voltage is the sum of applied D.C. voltage and peak A.C. voftage.

Base Faiture Rate - ~ (T= 105”C Max Rated) (MIL-C-39018 Styles 16 and 17) Sttess .7 ,1 .3 .5

[A(~) 0 10 20 30 40 50 60

.0070 .0085 .011 .014 .019 .026 .038 .059 .095

::

,0064 .010 .013 .017 .022 .031 .046 .071 .11

.014 .017 .021 .027 .037 .052 .076 .12 .19

.026 .031 .040 .051 .069 .097 .14 .22 .35

s=

=

),

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

Operating voftage is the sum of applied D.C. voltage and peak A.C. voltage.

10-24

.011

.021

.038

10

.0065

.0078

.013

.024

.044

20

.0077

.0093

.015

.029

.052

30

.0094

.011

.019

.035

.064

40

.012

.014

.023

.044

,080

50

.015

.019

.030

.057

.10

60

.021

.025

.041

.077

.14

70

.029

.035

.057

.11

.20

80

.042

.050

.083

.16

.28

90

.064

.077

.13

.24

.43

100

.10

.12

.20

.38

110

.17

.21

.34

.63

120

.30

.37

.60

1.1

+ I]exp(s.09

(~)

T.

Ambient Temperature (“C)

s=

Ratio of Operating to Rated Voltage

5 )

Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

I T

.0067

,,=.00254[(:)3

:=,0 1]:~.og’::;;7;~

.0055

.9 .047 .057 .072 .094 ,13 .18 .26 .40 .64

100

O:[($;:+

o

.

MIL-HDBK-217F

CAPACITORS,

10.14

Capacitate

Factor - WV

ELECTROLYTIC,

Environment

Capacitance, C (@)

‘Cv

2.5

v

1.0

1700

1.3

Factor - YC_ k

GB

1.0

GF

2.0

.70

400

ALUMINUM

Environment

.40

55

L

GM

12 6.0

Ns r

‘Cv

FIXED,

NU

17

5500

1.6

AK

10

14,000

1.9

AIF

12

2.2

*UC

28

32,000

‘UF

35

65,000

2.5

‘RW

27

120,000

2.8

= .34c0”’8

Quality Factor - YCQ Quality

%Q

s

.030

R

.10

P

.30

M

1.0

Non-Est. Ret.

3.0

Lower

10

SF

.50

MF

14

ML

38

CL

690

MIL-HDBK-217F

10.15

CAPACITORS,

FIXED,

ELECTROLYTIC

ALUMINUM

DESCRIPTION Aluminum, Dry Electrolyte, Polarized

STYLE CE

SPECIFICATION MIL-C-62

(DRY),

Ap = XbXcvZQzE

Hours

~ailures/106

Base Failure Rate - ~ Quality Factor - Xfi

(T = R’oc.- ----Mar .Ratt?ch .-. -.-, \ —--

stress TA (“C)

.1

.3

0

.0064

:: 30 40 50 60

.0078 .0099 .013 .018 .026 .041

.0074 .009 .011 .015 .021 .030 .047

I

Quality

.5

.7

.9

.011 .014 .017 .023 .031 .046 .071

.020 .024 .030 ,040 .055 .08 .12

.034 .042 .053 .070 .096 .14 .22

7rQ

3.0

MIL-SPEC

10

Lower

Environment

Factor - n= L

Environment

:~o”’

:1’’’:0’ (i)‘;;

‘;5)3

T.

Ambient Temperature (“C)

s-

Ratio of Operating to Rated Voftage

Capacitance,

C (vF)

3.2 62

400 1600 4800 12,000 26,000 50,000 91,000

~cv

= .32C

GF GM N~

Operating voltage is the sum of applied D.C. vottage and peak A.C. voltage.

Capacitance

GB

Factor - Xcv ~cv .40

n~

7

1.0 2.0

12 6.0

Nu

17

*IC

10

‘IF

12

*UC

28

*UF

35

*RW

27

.50

SF

.70 1.0 1.3 1.6 1.9 2.2 2.5 2.8

~F

14

ML

38

c1

0.19 I

690

MIL-HDBK-217F

10.16

SPECIFICATION MIL-C-81

CAPACITORS,

VARIABLE,

CERAMIC

DESCRIPTION Variable, Ceramic

STYLE Cv

kp = kbfiQZE Failures/l

06 Hours

Base Failure Rate - ~ (T= 85°C Max Rated) 1 Styles CV 11, 14, 21,31, 32,34,40,

(MIL-CTA (Z)

.1

o 10 20 30 40 50 60 70 1

.0030 .0031 .0033 .0036 .0041 .0047 .0058 .0076 .011

80

Ab=.00224[(~)3 T s.

=

.3

.5

.016 .017 .018 .020 .022 .026 .031 .041 .058

.086 .069 .073 .080 .089 .10 .13 .17 .24

+ 1].xp(l.,,

Quality Factor - nQ 41)

.7

.9

.18 .10 .20 .21 .24 .20 .34 .4s .63

.37 .39 .41 .45 .50 .59 .72 .94 1,3

(~)101)

o

(T= 125°C Max Rated) (M IL-C-81 Styles CV 35, 36) stress .1 .3 .5 .7 .0028 .0028

.015 .015

Environment

Factor - n= L

1

I

Environment

I

xcL

GB

1.0

GF

3.0

Ns Nu

13 8.0 24 6.0

37

.9

*UF

70 36

.061 .062

.16 .17

.35 .35

‘RW SF

.0029

.016

.064

.17

.36

.016 .017 .018 .019 .021 .023 .027 .033 .043 .059

.066 .068 .072 .077 .084 .095 .11 .14 .17 .24

,18 .18 ,19 .21 .23 .25 .30 .36 .47 .64

.37 .39 .41 .44 .48 .54 .63 .76 .98 1.4

T= s=

20

‘Uc

.0030 .0031 .0033 .0035 .0038 .0043 ,0050 .0062 .0079 .011

~-.00224[(~)3+

Lower

10

;:

I

4

‘iF

30 40 50 % 80 90 100 110 120

MIL-SPEC

AC

Base Failure Rate - ~

x~

I

GM

Ambient Temperature (“C) Ratio of Operating to Rated Voftage

Operating voltage is the sum of applied D.C. vottage and peak A.C. voltage.

TA (“C)

Quality

.40

MF ML

52

1

I

CL

l]exp(l.59(~)101)

Ambient Temperature (“C) Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied D.C. voltage and peak A.C. voltage.

10-27

MIL-HDBK-217F

10.17

CAPACITORS,

VARIABLE,

SPECIFICATION MIL-C-14409

PISTON

STYLE Pc

TYPE DESCRIPTION Variable, Piston Type, Tubular Trimmer

Lp = XbXQnE Failures/l

OG Hours Quality Factor - nQ

Base Failure Rate - ~ (T. 125°C Max Rated) (MIL-C-14409 Styles G, Ii, J, L, T) Stress .1 .3 .5 .7

TA (“C)

.0030 .0041 .0055 .0075 .010 .014 .019 .025 .034 .047 .063 .086 .12

1:

20 30 40 50 60 70 80 90 100 110 120 $=7.3

.0051 .0070 .0094 .013 .017 .024 .032 .043 .059 .079 .11 .15 .20

X1 O-7 [(~)3+

.013 .010 .024 .033 .044 .060 .082 .11 .15 .20 .27 .37 .51

h

l]exP(1201

.063 .085 .11 .16 .21 .29 .39 .53 .71 .96 1.3 1.8 2.4

(%%)

~er~ting

vohage is the sum of applied and pe ak A.C. voltage.

4

I’v

Lower

Environment

GB

) ,

D.C. vohage

GF

3.0

GM

-+-l

Ns Nu

Alc ‘IF

Base Failure Rate - ~ 150”C Max Rated) (MIL-C-1 4409 Characteristic (T=

0)

,3 .0032 .0042 .0056 .0074 .0099 .013 .018 .023 .031 .041 .055 .073 .097 .13 .17 .23

.1

.0019 .0025 .0033 .0044 .005s .0077 .010 .014 .018 .024 .032 .043 .057 .076 .10 .13

10 20 30 40 50 % 80 90 100 110 120 130 140 150

.5 .0081 .011 .014 .019 .025 .034 .045 .060 .079 ,11 .14 .19 ,25 .33 .44 ,59

.7 .019 .025 .034 .045 .060 .079 .11 .14 .19 .25 .33 .44 .59 .78 1.0 1.4

.9 .038 .051 .068 ,09 .12 .16 .21 .28 .38 .50 .67 .89 1.2

3.0 4.0 20

‘UF

30

‘RW

32

SF

4:: 2.8

.50

MF

18

ML

46

c,

I

18

%c

Stress

o

Factor - ZE

Environment

Ambient Temperature (“C) Ratio of Operating to Rated Vottage

T=

ZQ

MIL-SPEC

.9

.031 .042 .057 .077 .10 .14 .19 .26 .35 .48 .65 .88 1.2

4

Quality

830

4

11ex421 (-))

kb = 7.3 x 10-7

[(33+

,

(“C) Ambient Temperature s= Ratio of Operating to Rated Vottage Operating voltage is the sum of applied D.C. voltage and peak A,C. voltage. T

—-

--

=

.-

—1

m

. ..

----

-r–

----

l——

1

--

I I

MIL-HDBK-217F

10.18

SPECIFICATION MIL-C-92

1A (“C)

- ...-.

. .-. --,

.3

.5

.0074

.013

10

.010

20

.7

.9

.032

.076

.15

.017

.044

.10

.21

.014

.023

.059

.14

.28

30

.018

.031

.08

.19

.38

40

.025

.042

.11

.26

.52

50

.034

.057

.15

.35

.70

60

.046

.078

.20

.47

.94

70

.062

.10

.27

.63

80

.083

.14

.36

.85

0

Failures/l

06 Hours

1.0

GF

3.0

% NU *IC

XIO-6[(-&)3+

1]

.wfos

Ambient

Temperature

s=

Ratio of Operating

13 8.0 24 6.0

‘IF

10

‘Uc

37

*UF

70

1.3

‘RW

36

1.7

SF

(~)

% T-

nE

GB

NS

- 1.92

TRIMMER

Environment

stress

.1

AIR

Environment Factor - z~

Base Failure Rate - ~ --

VARIABLE,

DESCRIPTION Variable, Air Trimmer

STYLE CT kp = kb~QmE

\

CAPACITORS,

.50

MF

20

ML

52

CL

950

(“C)

to Rated

Voltage

Operating voltqe is the sum of applied and peak A.C. voltage.

D.C. vottag~

Quality Factor - XQ Quality

MIL-SPEC Lower

~Q

5 20

10-29

------

r--

MIL-HDBK-217F

10.19

CAPACITORS,

VARIABLE

SPECIFICATION M IL-C-23 183

AND

FIXED,

GAS

OR

—

VACUUM

STYLE

DESCRIPTION

CG

Gas or Vaa.mm Dielectric, Fixed and Variable, Ceramic or Glass Envebpe

Lp = kbXcFXQnE

Failures/l

OG Hours

Base Failure Rate - ~

Base Failure Rate - ~

(T. 85°C Max Rated) (Styles CG 20,21,30,31,32,40-44,

stress 0

10 20 30 40 50 60 70 80

.1

.3

.015 .016 .017 .018 .020 .024 .029 .038 .054

.081 .084 .090 .098 .11 .13 .16 .20 .29

.5

.88 ,92 .98 1.1 1.2 1.4 1.7 2.2 3.2

Ambient Temperature (“C) Ratio of Operating to Rated

s= Operating and peak

voltage

1.9 1.9 2.1 2.2 2.5 2.9 3.6 4.7 6.6

Vottage

is the sum of applied

D.C. voltage

A.C. voltage.

Base Faiture Rate - ~ (T= 100”C Max Rated) (Styles CG 65, 66) Stress

.1 o

1:

30 40 50 60 70 80 90 100

~=.0112 T=

s.

.014 .015 .015 .016 ,018 .020 .022 .027 .034 .045 .066

[(+)3+

.3

.078 .080 .084 .088 .095 .11 .12 .14 .18 .24 .36

.7

.9

.85 .87 .91 .96 1.0 1.2 1.3 1.6 2.0 2.7 3.9

1.8 1.8 1.9

.5

.30 .33 .34 .36 .39 .43 .49 !59 .74 .99 1.5

l]exP(l.59

Ambient Temperature (“C) Ratio of Operating to Rated

;;; 2.4 2.8 3.3 4.2 5.6 8.2

(~)lol)

Voltage

Operating vottage is the sum of applied and oeak A.C. voltaae.

10-30

m

.1

.3

.5

.7

.9

0

.014

.075

.37

.82

1.7

10

.014

.077

.31

.83

1.8

20

.014

.078

.32

.85

1.8

30

.015

.08

.33

.88

1.9

40

.016

.084

.34

.91

1.9

50

.016

.088

.36

.96

2.0

60

.018

.095

.39

1.0

2.2

70

.019

.10

.42

1.1

2.4

80

.022

.12

.48

1.3

2.7

90

.025

.14

.55

1.5

3.1

100

.031

.17

.68

1.8

3.8

110

.04

.21

.87

2.3

4.9

120

.055

.29

.9

11”’’(15’ (=)’O1;

[(~)3+ T=

.7

.33 .34 .37 .40 .45 .52 .64 .83 1.2

Ab=.o112

(T= 125°C Max Rated) (stvl@ -- .50) -.-, \ -.= .- CG Strm8

51,60-64,

D.C. voltage

T= s=

1.2

Ambient TemWrature (“C) Ratio of Operating to Rated Vottage

Operating vottage is the sum of applied D.C. vottage and pa ak A,C. voltage.

I .!

.,.

... . .

... .,,

,..

MIL-HDBK-217F

I 10.19

CAPACITORS,

--

‘C F .10

Fixed

AND

Environment % GF

1.0

Variable

GM Ns QuaIii

Factor- XQ

Quality

~Q

MIL-SPEC

3.0

Lower

FIXED,

Environment

Configuration Factor - TCCF Conf~ratkm

VARIABLE

20

GAS

OR

VACUUM

Factor - fiE

~E 1.0 3.0 14 8.0

Nu

27

AC

10

‘IF

18

*UC

70

*UF

108

‘RW

40 .50

SF MF

NIA

ML

NIA

cL

NIA

MIL-HDBK-217F

10.20

CAPACITORS,

EXAMPLE

—

Example A 400 VDC

Given:

rated capacitor

type CQ09A1 KE153K3

is being used in a fixed ground

environment, 59C component ambient temperature, and 200 VDC applied with 50 Vrms @ W Hz. The Capadtor specification.

iS Ming

procured

in full accodance

with the applicable

The letters “CQ- h the type designation hdkate that the specification is MIL-C-19978 and that it is a NonEstablished Reliability qualii level. The Ist “K” in the designation indicates characteristic K. The “E” in the designation corresponds to a 400 vott DC rating. The “153” in the designation expresses the capacitance

in pioofarads.

The first two digits are signifiint

and the third is the number of zeros to follow.

Therefore, this capacitor has a capacdance of 15,000 picofarads. (NOTE: Picos 10-12, p = 10~

The appropriate model for CQ style capacitors is given in Section 10.3. Based on the given information the following model factors are determined from the tables shown in Section 10.3. Voltage stress ratio must account for both the applied

DC volts and the peak AC vottage,

S=

s

=

.68

lb

=

.0082

hence,

DC Volts Applied + ~2 (AC Volts Armlied~ = DC Rated Voltage

Substitute S = .68 and TA = 55°C into equatbn shown

with CharacteristicK ~ Table. 7ECV

=

7CQ

=

10

~E

=

2.0

~

10-32

.94

= ~

Use

Table Equation (Note 15,000 pF = .015 pF)

ICcv nQ XE = (.0082)(.94)(1

O)(2) = .15 FailuresJl 06 Hours

MIL-HDBK-217F 11.1

SPECIFICATION

STYLE TF TP

MIL-T-27 MIL-T-21038 MIL-T-55831

INDUCTIVE

DEVICES,

TRANSFORMERS

DESCRIPTION Audio, Power and High Power Pulse Low Power Pulse

IF, RF and Discriminator Xp = lb~QXE

06 Hours

Failures/l

, Base Faiture Rate - ~

Maxinwm Rated OperatingTemperature (“C) ~~ 1

TH~ (%) 30

.0024 .0026 .0028 .0032 .0038 .0047 .0060 .0083 .012 .020 .036 .075

35

40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 185 NOTE: 1 “

\..oolat?xp

.0023 .0023 .0024 .0025 .0027 .0029 .0032 .0035 .0040 .0047 .0057 .0071 .0093 .013 .019 .030

}1s are valtd onl fiHS + 273\ ---= \

>1706

1705

.0016 .0016 .0016 .0016 .0017 .0017 .0017 .0017 .0017 .0017 .0017 .0017 .0018 .0018 .0018 .0018 .0019 .0019 .0019 .0020 .0020 .0021 .0021 .0022 .0023 .0024

.0018 .0018 .0019 .0019 .0020 .0020 .0021 .0021 .0022 .0023 .0024 .0024 .0025 .0026 .0027 .0028 .0030 .0031 .0032 .0034 .0036 .0038 .0040 .0042 .0044 .0047 .0050 .0053 .0056

.0021 .0022 .0022 .0022 .0023 .0023 .0023 .0024 .0025 .0026 .0027 .0028 .0029 .0031 .0033 .0035 .0038 .0042 .0046 .0052 .0059 .0068 .0079 .0095 .011 .014

.0022 .0023 .0024 .0025 .0026 .0027 .0029 .0030 .0033 .0035 .0039 .0043 .0048 .0054 .0062 .0072 .0085 .010 .013 .016 .020

.0025 .0026 .0027 .0029 .0030 .0032

-

-

Themo

, =4

,~3

1052

lSs

if THS IS not above the temperature rating for a given insulation class. MIL-T-27 Insdatmn Class 0, MIL-T-21038

Insulation Class C?,and MlL-T-5563I

MIL-T-27 Insulation Class R, MIL-T-21 038 Insulation Class R, and MIL-T-55831

3 4

+-’18’*F=)87

MIL-T-27 Insulation Class S, MlL-T-2I 038 Insulation Class S, md MIL-T-S5631

+’=m2ex’c”:~273)i0

MIL-T-27 Insulation Class V, MIL-T-21 038 Insulation Class T, and MIL-T-s5631

‘

~-om’-’(”:”)””)”

‘

~-m’w”x’(TH:;:73)8”4

Class O.”

Insulation Class A.”

Insulation Class B.”

Insulation Class C,*

MIL-T-27 Insulation Class T and MIL-T-21 038 Insulation Class U.*

MIL-T-27 Insulation Class U and MIL-T-21038

‘w

tnsuhon

)

. Hot Spot Temperature (%),

See Se&h

11.3.

“Rotor to Transformer

Insulanon Class V “

Application

Not-

tor Oatormlnstlon

of Irwulatlon

Class I

11-1

MIL-HDBK-217F

11.1

INDUCTIVE

DEVICES,

TRANSFORMERS

Quality Factor - ~ Family Type” Pulse Transformers

1.5

Audio Transformers

3.0

I Lower I 5.0 I 7.5

8.0

30

Power

Transformers

1 MIL-SPEC

and Filters

RF Transformers

●

12

I

Refer to Transformer Appllcatlon Determlnatlon of Family Typ.

Environment

30

Note

Factor - ZE

Environment

TRANSFORMER APPLICATION NOTE: Insulation Class and Family Type Determination

MIL-T-27

Example R

TF

4

I MIL-T-27

I Grad,

I

GF

6.0

Alc ‘IF

12

~ symbol

Are:

Power Transformer

and Filter:

Audio Transformer:

10 thru 21, 50 thru 53

Pulse Transformer:

22 thru 36, 54

Example 4

01 thru 09, 37 thru 41

I

I

16

Grade

MIL-T-55631.

8.0

Type I

.

Type

II

Type

Ill

Grade

1

.50

Grade

2

13

Grade 3

34

Class O

610

Grades

and Classes.

.

.

For Use When immersion and Moisture Resistance Tests are Required For Use When Moisture Resistance Test is Required For Use in Sealed Assemblies

Class A

.

Class B

-

Class C

Types,

Intermediate Frequency Transformer Radio Frequency Transformer Discriminator Transformer

24

SF

I Insulation

The Transformers are Designated

with the following

9.0

X11 OO8COO1

Class

6.0

‘UF

Designation Q

5.0

7.0

MF

I

Fatity

Family Type Codes

MIL-T-21038

*UC ‘RW

85oC Maximum Operating Temperature 105°C Maximum Operaiing Temperature 12SeC Maximum Operating Temperature > 125°C Maximum Operating Temperature

The class denotes the maximum operating temperature (temperature rise plus maximum ambient temperature).

11-2

576

for

TP

Nu

I

Imldabrl Clasa

MI L-T-21038 1.0

Ns

m

01

~E

GB

%

Deslgnatlon

MIL-HDBK-217F

11.2

DEVICES,

COILS

DESCRIPTION Fixed and Variable, RF Moided, RF, Est. Rel.

STYLE

SPECIFICATION MIL-C-15305 MIL-C-3901O

INDUCTIVE

Xp = kbnc7cQ7LEFailures/l 06 Hours Construction Factor - Xc

Base Failure Rate - ~ Maximum Operating Temperature ~C) TH~ (oC) 30 35 40 45 50 E 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150

851 .00044

1052 .00043

.00039

.00048

.00044

.0004

.00053 .0006 .00071 .00087 .0011 .0015 .0023 .0037 .0067 .014

.00046 .00048 .00051 .00055 .0006 .00067 .00076 .00089 .0011 .0013 .0018 .0024 .0036 .0057

.00042 .00043 .00045 .00048 .00051 .00054 .00058 .00063 .00069 .00076 .00085 .00096 .0011 .0013 .0015 .0018 .0022 .0028

1253

1504 .00037 .00037 .00037 .00038 .00038 .00039 .0004 .00041 .00042 .00043 .00044 .00046 .00047 .0005 .00052 .00055 .00059 .00063 .00068 .00075 .00083 .00093 .0011 .0012 0014

Construction Fixed Variable

Zc

I

1 2

Quality Factor - ~ Quality

7rQ

s

.03

R

.10

P

.30

M MIL-C-15305 Lower

1.0 4.0 20

NOTE: The models are valid onty if THS is not above the tern perature rating for a given insulation class.

“ ~=mmex’(’”:~:’’)””’ ,n$u~onc,-$o MlL-C- 15305

2

‘=m’gexp(’”:;:’”)”

MlL-C-l 5305 InsulationClass A and MIL.C-3901 o ,~u~~c,wA,

3. MIL-C-15305 InsulationClass B and

~--19exp(TH::27a)e”7 MIL-C-3901O InsulationChseeB.”

4.

MIL-C-I 5305 InsulationClass C and MIL-C-3901O InsulationClass F .“

‘HS

= Hot Spot Temperature(“C), See Section f 1.3.

“Refer to Coil Appllcetlon Note for Determhmtlon of Inaulatlon Claes.

11-3

MIL-HDBK-217F

11.2

INDUCTIVE

DEVICES,

—

COILS

COIL

Environment Factor - ZE

NOTE: Infsulatlon Class From Part Designation

APPLICATION

Determination ~E

Environment GB

1.0

GF

4.0

% Ns Nu

001

4

I 5.0

MIL--G153O5

I Insulation Class Code

Famify

16 5.0

‘IF

7.0

*UC

6.0

*UF

8.0 24

SF

11-4

LT

12

Ac

‘RW

MlL-C-l 5305. All parts in this specification are R.F. wils. An example type designation is:

.50

MF

13

ML

34

CL

610

The codes used for the Insulation C&ss are: 1,2,3 Class C: 4, 5, 6 Class B: 7, 8, 9 Class O: 10,11,12 Class A:

MI L-C-3901 O. An example type designation per this specification is: M I Military Designator

39010/01

I

Document Sheet Number

A

I

Insulation class

MIL-HDBK-217F

11.3

INDUCTIVE

DEVICES,

DETERMINATION

OF

HOT

SPOT

TEMPERATURE

Hot Spot temperature can be estimated as follows:

,

THS=TA+

1.1 (AT)

where: THS

=

Hot Spot Temperature

TA

=

Inductive Device Ambient Operating Temperature

AT

=

Average Temperature

(“C) (“C)

Rise Above Ambient (“C)

AT can either be determined by the appropriate “Temperature Rise- Test Method paragraph in the device base specification (e.g., paragraph 4.8.12 for M IL-T-27 E), or by approximation using one of the procedures described below. AT Approximation Infnrmatinn .. ... .. ... . .“.

1.

,

,.,

AT Annrqximation w —. —

1

Knnwn ,”....

-,

MIL-C-3901 O Slash Sheet Number MIL-C-39010/l C-3C, 5C, 7C, 9A, 10A, 13, 14

AT = 15°C AT = 35°C

tvllL-c-39010/4C, 6C, 8A, 11, 12 2.

Power Loss Case Radiating Surface Area

3.

Power Loss Transformer Weight

4.

Input Power Transformer Weight (Assumes 80% Efficiency)

w~

=

Power Loss (W)

A

=

Radiating Surface Area of Case (in2).

wt.

=

Transformer Weight (Ibs.)

w,

=

Input Power (W)

.yp.

AT=

125 w@

AT=

11.5 WL/(Wt.).6766

AT = 2.1 w,/(w@66

See below for MIL-T-27

Case Areas

NOTE: Methods are listed in preferred order (i.e., most to least accurate). MIL-C-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating surface area,

Case AF AG

.

MIL-T-27 Case Radiating Areas (Excludes Mounting Surface) Case Case Area (in*) Area {in2) 4 GB 33 LB 7 43 GA LA

Area (in2) 82 98

AH

11

HB .

42

MB

98

AJ EB EA FB FA

18

HA JB JA KB KA

53 58 71 72 84

MA NB

115 117

::

139 146

;; 25 31

11-5’

I

1

MIL-HDBK-217F I

12.1

ROTATING

DEVICES,

MOTORS

I I

The following failure-rate model appiies to motors with power ratings betow one horsepower. This model is applicable to polyphase, capacitor start and run and shaded pole motors. It’s application may be extended to other types of fractional horsepower motors utilizing rolling element grease packed bearings. The rndel is dictated by two failure modes, bearing failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and replaced and are not a failure mode. Typical appkations include fans and Mowers as well as various other motor applications. The model is based on Referenoe 4, which oontains a more comprehensive treatment of motor life precktion methods. The reference should be reviewed when bearing loads exceed 10 percent of rated bad, speeds exceed 24,000 rpm or motor back include motor speed slip of greater than 25 percent. The instantaneous failure rates, or hazard rates, experienced by motors are not oonstant but increase with time. The failure rate model in this sectbn is an average failure rate for the motor operating over time period “t”. The motor operating time period (t-hours) is selected by the analyst. Each motor must be replaced when it reaches the end of this perbd to make the calculated ~ valid. The averaga failure rate, ~, has been obtained by dividing the cumulative hazard rate by t, and can be treated as a constant failure rate and added to other part failure rates from this Handbook.

~2 %[

I

=—

1

UB 3+~

x 106 Failures/l 06 H0ur6 1

Bearing & Winding Characteristic Life - aB and aw TA ~C)

aB (Hr.)

-40 -35 -30 -25 -20 -15 -lo -5 o 5 10 15 20 25 30 35 40 45 50

aB

aw

310 310 330 370 460 660 1100 1900 3600 6700 13000 23000 39000 60000 78000 86000 80000 68000 55000

10 (

=

(Hr.)

1.9e+08 1.2e+08 7.4e+07 4.78+07 3.1 e+07 2.0e+07 1.4e+07 9.2e+06 6.4e+06 4.5e+06 3.2e+06 2,3e+06 1.6e+06 1.2e+06 8.9e+05 6.60+05 5.oe+05 3.8e+05 2.9e+-5

2357 2’534 ‘7A + 273 )

+ 2010 (

[ 2357 [ TA + 273

-

aB (Hr.)

55 60 65 70 75 80 85

44000 35000 27000 22000 17000 14000

2.3e+05 1.8e+05 1.4e+05 1.1 e+05 8.8e+04 7.0e+04

11000

5.7e+04

9100 7400 6100 5000 4200 3500 2900 2400 2100 1700 1500

4.6e+04 3.8e+04 3.le+04 2.5e+04 2.1 e+04 1.8e+04 1.5e+04 1.2e+04 1.oe+04 8. 9e+03 7.5e+03

E 100 105 110 115 120 125 130 135 140

1 4500 7A + 273

)

+ 300

aw

(Hr.)

-1 1

1 .83]

aw

=

10

aB

=

Weibull Characteristic Life for the Motor Bearing

aw

s

Weibull Characteristic Life for the Motor Windings

TA

-

Ambient Temperature (“C)

t

=

Motor Operating Time Period (Hours)

NOTE:

TA (oC)

See next page for method to calculate aB and aw when temperature is not constant.

12-1

MIL-HDBK-217F

12.1

ROTATING

DEVICES,

MOTORS

%.ala

Ilation ‘Or cYcled ‘eWr*ure

The following equation can be used to calculate a weghted (e.g., for bearings substitute aB for all a’s in equation).

characteristic life for both bearings and windings

h1+h2+h3+------hm hm —+ al

—+ a2

— +-------— a3

where: either (%Bor aw

a= h,

=

Time at Temperature

h2

=

Time to Cycle From Temperature

h3

=

Time at Temperature

T3

hm

=

Time at Temperature

Tm

al

=

Bearing

(or Winding)

Life at T,

=

Bearing

(or Winding)

Life at T2

‘2

T,

T, + T3 NOTE:

T2=2,

T, to T3

T3 + T, T4=2

T3 i= T2 T1 hl

h2

h3

Hours Thermal

12-2

(h) Cycle

am

MIL-HDBK-217F

12.2

ROTATING

DEVICES.

SYNCHROS

AND

RESOLVERS

DESCRIPTION Rotating Synchros and Resolvers Lp = XbKSZNXE NOTE:

Synchros and resolvers are predominately used in service requiring only slow and infrequent motion. M-echanical wearout problenis are infrequent so that the electrical failure mode dominates, and no mechanical mode failure rate is required in the model above.

Number Of Brushes Factor - ~N

Base FaiUre Rate - ~ TF (%)

Tr (“C) 30 35 40 45 50 55 60 65 70 75 80

% TF

Failures/l 06 Hours

85 90 95 100 105 110 115 120 125 130 135

.0083 .0088 .0095 .010 .011 .013 .014 .016 .019 .022 .027

Number of Brushes .032 .041 .052 .069 .094 .13 .19 .29 .45 .74 1.3

= .00535 exp =

Synchro

3.2

~E

2.0 12 7.0 18

Aic

4.0

‘IF

6.0

*UC

16

‘UF

25

*RW

26

Size 18 or Larger

SF MF

14

1.5

1

ML

36

2.25

1.5

CL

680

Size 8 or Smalier

Size 10-16

2 3

I Resolver

4

GF

Nu

DEVICE TYPE

2.5

1.0

NS

%s

3

GB

Frame Temperature (“C)

Size Factor - XS

1.4

L

Environment

GM

If Frame Temperature is Unknown Assume TF .40 ‘C + Ambient Temperature

2

Environment Factor - YIC=

)85

(T~:~3

%N

.50

I

12-3

—

MIL-HDBK-217F

12.3

ROTATING

DEVICES,

ELAPSED

TIME

METERS

—

DESCRIPTION Elapsed Time Meters

kp = kbycE

Base Failure Rate - ~

Failures/l 06

Hours

Environment Factor - Xr

w

b

Type

k~

A.C.

20

Inverter Driven

30

Environment %

1.0

GF

2.0

GM Commutator D.C.

80

N~ Nu

Temperature

Stress Factor - ZT

Operating T (°C)/Rated T (“C)

XT

12 7.0 18

*IC

5.0

‘IF

8.0

*UC o to

ZE

16

.5

.5

‘UF

25

.6

.6

*RW

26

.8

.8

1.0

1.0

SF

12-4

.50

MF

14

ML

38

CL

NIA

MIL-HDBK-217F

12.4

ROTATING

DEVICES,

EXAMPLE

Example Fractional Horsepower Motor operating at a thermal duty cycle of: 2 hours at 10O°C, 8 hours at 20”C, 0.5 hours from 100°C to 20”C, and 0.5 hours from 20°C back to 100”C. Find the average failure rate for 4000 hours operating time.

Given:

The basic procedure is to first determine operating temperature at each time intewai temperature when traversing from ow temperature to another, e.g. T2 = (100 + 20/2 = ~“c. aB and aw at each temperature to use in the ~

ati

then use these vakes to determine a wei@kf

(or averge ~te~in

average ~

and aw

e~ation.

T,

=

1 OO”C;

aB

=

6100 hours;

aw

=

31000

h2 = h4 = 0.5 hr.

T2

=

60%;

aB

=

35000

hOUfS;

aw

=

180000

h3

T3

=

20”C;

aB

=

39000

hours;

aw

=

1600000 hours

h,

=

=

2 hr.

8 hr.

aB

=

aw

=

=

=

2 6100

2 +0.5+8+0.5 0.5 8 + 35000 + 39000

2 31000

2 +0.5+8+0.5 0.5 8 + 180000 + 1600000

hOUR

= 19600 hours

0.5 + 180000

= 146000

hOUB

(3++”0’ (

(4000)2

(19600)3

=

0.5 + 35000

hours

9.0 FaihxeW

1 + 146000

X106 )

06 Hours

12-5

MIL-HDBK-217F

RELAYS,

13.1 SPECIFICATION MIL-R-5757 MIL-R-6106 MI L-R-19523 MIL-R-39016

MIL-R-19648 MIL-R-83725 MIL-R-83726

DESCRIPTION Mechanical Relay (Except Class C, Solid State Type)

Lp = &XLZCZCYCXFXQXE Base Failure Rate - ~ Rated

TA (’W)

—

06 Hours Load Stress Factor - XL

u

.0060 .0061 .0063 .0065 .0068 .0072 .0077 .0084 .0094 .011 .013 .016 .020

% 75 80 85 90 95 100 105 110 115 120

Failures/l

Temperature

85%+

30 35 40 45 50 55 60

MECHANICAL

125

125”c~ .0059 .0060 .0061

Resist ive’

.05 .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00

.0062 .0064 .0066 .0068 .0071 .0074 .0079 .0083 .0089 .0097 .011 .012 .013 .015 .018 .021 .025 .031

Load Typo -

I

s

XL = @Xp

3.

,8

; :Z 2.72 9.49 54.6

S2 XL = exp

s2~= ~

~L = e’p

~

()

() 2.

Lamp3

— ~2

1.

lnductive2 1.02 1.06 1.28 1.?6 2.72 4.77 9.49 21.4

1.00 1.02 1.08 1.15 1.28 1.48 1.76 2.15 2.72 3.55

Operatino Load Current Rated Resistive Load Current

()

which switch two different load types, evaluate XL for each possible stress load type

For single devices

combination and use the worse case (largest ZL).

1“%=

00’5’ex’cA::73)’5”7 00Mex’cAJ~73)’04

Cycling Factor - ~YC

Cycle Rate

2%= TA

.

21.0 <1.0

Ambient Temperature (oC)

Cycle Rate (Cycles per Hour)

Contact Form Factor - ~ r

I

to Active Conducti ng Contacts) Contact Form ~c I

(Applies

DPST

SPDT 3PST 4PST DPDT ‘PDT 4PDT

I

‘CYC (MI L-SPEC) i-io~ 10 0.1

(Cycles per Hour)

6PDT

1.50 1.75 2.00 2,50 3.00 4.25 5.50 8.00

WC

(Lower

>1000 10-1000

NO~

:Values of ZCYC

Quality)

Cycles per Hour 2 100 ) (

I

Cycles per Hour 10

for cycling rates beyond

the

basic design limitations of the relay are not valid. Design specifications should be consulted prior to

I

‘Va’uation ‘f ‘CYC. 13-1

I

I II

h41L-HDBK-217F

13.1

MECHANICAL

RELAYS,

Oualhy

%

1

I

i ~tion

con-

Construction Type

I

b

I

.10

R P x

.30 .45

I

u M L Non-Est.Rol.

.60

I

Dry Rwd

Ifbwmv[ d In@

::: 3.0

I MofcuwWottod

18

6 11131.

I 12

6 5

ArmuW(lmngand

Envimnmont Factor -~

10

$tE ,

Environment

MIL-SPEC

GB

1.0

5.0

ArrnmW@(081anc0d

I

A~

7.0

15

9.0

20

Auc

11

20

%F

12

36

46

1’40

.50

SF %

1.0

I

Elut mfiic

Tiu90Dd8y,

L&w I Mching, MqymtiZ 5-20 w Mdiurn

IPm-

72

25

I

% cl

66

CWMctom m Cwu?t)

I

I

,.

Uucury Wmttod B8bcod Arwnturo vaCwm (Gk!m) Vaafwl (CkmmiC) An I short] ‘

2

6

M

9

12

1 -1-1 10 10 40

5 5 20 5

10

11

I

WA

WA

w

I

A

78

27

*IC

MwcuryWetted

24

8.0

N

1

Hqh Spood

20 20 100

I

NS

Iw

B8mcul Ammtuf6110 10 AwnmJro(short) 100

u

15

GM

i

Poi8fizod

2.0

2.0

%

LowOrOudity

=1

I

(short) Wchankd Latching OatuK#d . Ann8tufo

1~

6

2 7 12

z

10

I

5

-.

I

20 1

10

I

MIL-HDBK-217F

13.2 SPECIFICATION MIL-R-28750 MIL-R-83726

RELAYS,

SOLID

STATE

AND

TIME

DELAY

DESCRIPTION Relay, Solid State Relay, Time Delay, Hybrid and Solid State

The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum the failure rates for the individual components which make up the relay. The individual component failure rates can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has about the components being used. If insufficient information is available, the following cfefautt model can be used: ~

= ~X@E

Failure@106 Hours

Base Faiiure Rate - ~

Environment Factor - Xr

Relay Type

Environment

Solid State

.40

Solid State Time Delay

.50

GB

1.0

GF

3.0

GM Hybrid

.50

I

MIL-SPEC Lower

6.0

Nu

17

*tc

12

‘IF

19

‘Uc

21

1.0

*UF

32

4.0

‘RW

23

~Q

I

12

NS

Quality Factor - ZQ Quality

nE

SF

.40

MF

12

ML

33

CL

590

13-3

, +

MIL-HDBK-217F

14.1 SPECIFICATION MIL-S-3950 MIL-S-8805 MIL-S-8834

SWITCHES,

Xp = kb7tcyc7cL7rc7zEFailures/l

Snap-action

I

I

Non-snap Action

MIL-SPEC .00045

06 Hours

1 Lower Quality

Contact Form

xc

I

SPST DPST SPDT 3PST 4PST DPDT 3PDT 4PDT 6PDT

1.0 1.5 1.7 2.0 2.5 3.0 4.2 5.5 8.0

I

.0027

PUSHBUTTON

Contact Form and Quantity Factor - xc

Base Failure Rate - ~

I

OR

DESCRIPTION Snap-action, Toggle or Pushbutton, Single Body

MIL-S-22885 MIL-S-83731

Description

TOGGLE

.034 .040

Cycling Factor - Zcyc b

Switching Cycles per Hour

*CYC

s I Cycle/Hour

1.0 Environment Factor - nE

>1 Cycle/Hour

Number of Cycles/Hour

Load Stress Factor - ~L Stress s 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Resistive 1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4,77

Load Type Induct ive 1.02 1.06 1.28 1.76 2.72 4.77 9.49 21.4

XL

=

exp (S/.8)2

for Resistive Load

XL

=

exp (S/.4)2

for Inductive Load

~L

=

exp (S/.2)2

for Lamp Load

GB

1.0

GF

3.0 18

GM

Lamp 1.06 1,28 2.72 9.49 54.6

Ns

8.0

NU

29

Alc

10

‘IF

18

‘Uc

13

*UF

22

‘RW

46

SF

Operating Load Current Rated Resistive Load Current

s=

~E

Environment

.50

MF

25

ML

67

CL

1200

NOTE: When the switch is rated by inductive load, then use resistive XL.

14-1

I

1,.,

*mm..

I,

,-

I

.AA1.4WI

.4

WI.*-

fi

.4Knw

I

MIL-HDBK-217F

14.2

SWITCHES,

BASIC

SENSITIVE

T

SPECIFICATION MIL-S-88f)5

DESCRIPTION Basic Sensitive

Ap =L7C ~ ~YCXLZE

Failures/l

06 Hours

Cycling Factor - ncyc

Base Failure Rate - ~

%=%’JE’%C

>0.002 ~

= ~E

+ n~

inches)

(if Actuation Differential is <0.002

inches)

n = Number of Active Contacts Description

MIL-SPEC .10

.10

%C

.00045

.23

‘bO

.0009

.63

Load StreSs Factor -XL Resistive 1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77

::: 0.6 0.7 0.8 0.9 1.0

I

51 Cycle/Hour

I

>1 Cycle/Hour

1.0

I

I

I

Number of Cycles/Hour I

Load Type Inductive 1.02 1.06 1.28 7.76 2.72 4.77 9.49 21.4

Environment Factor - xc Environment GB

1.0

GF

3.0

% Ns Lamp 1.06 1.28 2.72 9.49 54.6

18 8.0

N“

29

*IC

10

‘IF ‘Uc

18 13

‘UF

22

*RW

46 .50

SF

s=

Operatin~ Load Current Rated Resistive Load Current

nL

=

exp (S/.8)2

for Resistive Load

XL

=

exp (S/.4)2

for Inductive Load

~L

=

exp (S/.2)2

for Lamp Load

MF

25

ML

67

Ci

NOTE: When the Switch is Rated by Inductive Load, then use Resistive XL.

I 4-L

‘CYC

Lower Quality

%E

Stress s 0.05 0.1 0.2 0.3

Switching Cycles per Hour

(if Actuation Differential is

1200

I

MIL-HDBK-217F

14.3

SWITCHES,

ROTARY

DESCRIPTION Rotary, Ceramic or Glass Wafer, Silver Alloy Cotiacts

SPECIFICATION MIL-S-3786

Failures/l

kp = lb7ccycKL7cE

06 Hours

Cycling Factor - ~yc

Base Failure Rate - ~ b

Switching Cycles per Hour

Base failure rate model (~: (for Cemrnc RF Wafers)

%=%E’%F

(for Rotary Switch Medium

%=%E+”~G

Power Wafers) n = Nu~r

I

I

s 1 Cycle/Hour

I

> 1 Cycle/Hour

MIL-SPEC

Lower Quality

‘b E

.0067

.10

‘bF

.00003

.02

%G

.00003

.06

Number of Cycles/Hour

Resistive

1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77

Inductive

1.02 1.06 1.28 1.76 2.72 4.77 9.49 21.4

GB

1.0

GF

3.0 18

N~

Load Type

m

Environment

GM

Load stress Faotor - ~L Lamp

1.06 1.28 2.72 9.49 54.6

Operating Load Current Rated Resistive Load Current

XL

=

exp (S/.8)2

for Resistive Load

XL

=

exp (S/.4)2

for Inductive Load

exp (S/.2)2

for Lamp Load

~L =

I

Environment Factor - nv

s.

1.0 I

of Active co~ta~s

Description

Stress s 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

‘CYC

NOTE: When the Switch is Rated by Inductive Load, then use Resistive XL.

1

8.0

Nu

29

Alc

10

‘IF

18

%

13

‘UF

22

‘RW

46

SF

,

-

.50

MF

25

ML

67

CL

1200

,.

MIL-HDBK-217F

14.4

SWITCHES,

THUMBWHEEL

—

SPECIFICATION MIL-S-2271O Line

DESCRIPTION Switches, Rotary (Printed Circuit) (Thumbwheel, lnand Pushbutton) Zp = (~1

CAUTION:

+ XN %2) XCYCZLXE

Failures/l

06 Hours

This model applies to the switching function only. The model does not consider the contribution of any discrete components (e.g., resistors, diodes, lamp) which may be mounted on the switch. If significant

(relative to the switch failure rate), the failure rate of these devices must be calculated using the appropriate sectionof this Handbook and added to the failure rate of the switch. This model applies to a single switch seotion. This type of switch is frequently ganged to provide the required function. The model must be applied to each section individually.

1

Cycfing Factor- XCYC

Base Failure Rate - kbl and %2 —— MIL-SPEC Description Lower Quality

Switching Cycles Der Hour

I I

%1

.0067

.086

‘b 2

.062

.089

Number

I

of Active Contacts

Load Stress Factor - ZI

1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

> 1 Cycie/Hour

Environment

I

Number of Cycles/Hour

1.06 1.28 2.72 9.49 54.6

1.02 1.06 1.28 1.76 2.72 4.77 9.49 21.4

1.0

GF

3.0 18

N~

exp (S/.8)2

for Resistive

XL

=

exp (S/.4)2

for Inductive Load

XL

=

exp (S/.2) 2

for Lamp Load

8.0

Nu

29

Aic

10

‘IF

18

‘Uc

=

~E

GB Lamp

XL

NOTE:

14-4

Load Type inductive

Operating Load Current Rated Resistive Load Current

s=

I

1.0

Environment Factor - x= I

Resistive

s 1 Cycle/Hour

‘CYC

Factor - ZN

~N = Number of Active Contacts

Stress s 0.05

I

I

13

‘U F

22

‘RW

46

.50

SF

Load

When the Switch is Rated by Inductive Load, then use Resistive XL.

MF

25

ML

67

CL

1200

I

MIL-HDBK-217F

I

14.5 SPECIFICATION M IL-C-55629 MIL-C-83363 MIL-C-39019 w-c-375

DESCRIPTION Circuit Breakers, Circuit Breakers, Circuit Breakers, Circuit Breakers,

SWITCHES,

CIRCUIT

BREAKERS

Magnetic, Unsealed, Trip-Free Remote Control, Thermal, Trip-Free Magnetic, Low Power, Sealed, TripFree Service MoJded Case, Branch Circuit and Service

I = &cnUZQKE

06 Hours

Failures/l

Base Failure Rate - ~

Quality Factor - XQ

Description

Lb

Quality

*Q

I

1

1

I

/

I

I

Magnetic

.020 I

Thermal

I

.038 I

I

Thermal-Magnetic

I

.038

I

i

MIL-SPEC

1.0

Lower

8.4

I

* Environment Factor - n= Environment

Configuration

Factor - XC

Configuration

SPST DPST 3PST 4PST

1.0 2.0 3.0 4.0

Use Factor - m t u

Use Not Used as a Power OtiOff Switch Also Used as a Power On/Off Switch

GB

1.0

GF

2.0

Zc

GM

15

Ns

8.0

Nu

27

An

7.0

‘IF

9.0

*UC

11

*UF

12

*RW

46

lru 1.0

SF 10

.50

MF

25

ML

66

CL

tWA d

14-5

n7c

I

I

1

.

----

.

..A

Ann

MIL-HDBK-217F I I

15.1

I

CONNECTORS,

GENERAL

(EXCEPT

PRINTED

CIRCUIT

BOARD)

I

I

s M M M M M M M M M M

DESCRIPTION SPECIFICATION” Rack and Panel M IL-C-24308 M IL-C-28748 IL-C-28804 .M M IL-C-83513 M Cimdar M L-C-5015 M IL-C-26482 M 1~ M L-C-38999 L-C-81 511 I ●1JOTE: See following page for connector configurations.

EDIFICATION* .“C-3607 .-c-3643 .-C-3650 .-c-3655 .-C-25516 .-(2-3901 2 .-C-55235 .-c-55339 .-C-3767 .-C-22992

DESCRIPTION Coaxial, RF

Power

Triaxial, RF

MIL-C-49142

Ap = AbZ~ZpnE Failures/l 06 Hours APPLICATION NOTE: The failure rate model is for a mated pair of connectors. It is sometimes desirable to assgn half of the overall mated pair connector (i.e., single connector) failure rate to the line replaceable unit and half to the prediction to allow a chassis (or backplane). An example of when this would be beneficial is for input to maintainability failure rate weighted repair time to be estimated for both the LRU and chassis. This accounting procedure could be significant if repair times for the two halves of the connector are substantially different. For a single connector divide kp by two.

Base Failure Rate - ~

Base Faiture Rate - ~ To (oC)

Al .00006

.00008 ;: 30 40 50 60 70 80

r

90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250

-

.00009 .00011 .00014 .00016 .00020 .00023 .00027 .00032 .00037 .00043 .00050 .00059 .00069 .00080 .00094 .0011 .0013 .0016 .0019 .0023 .0028 .0034 .0042 .0053

Insert Material* f32 & .00025 .00033 .00044 .00057 .00073 .00093 .0012 .0015 .0019 .0023 .0029 .0036 .0045 .0056 .0070 .0087 .011 .014 .018 .022 .029

.0021 .0026 .0032 .0040 .0048 ,0059 .0071 .0087 .011 .013 .016 .020 .024

(oont’d)

D4 .0038 .0048 .0062 .0078 .0099 .013 ,016 .020 .026 .033 .043 .056 .074

“ ff a mating pair of connectors uses two types of insert materials, use the average of the base failure rates for the two insert material types. See following page for inserl material determination.

‘ . ~=

.020 ~xp

~-lsgz.o ((0+=’)+

2. ~=

.431

3. ~=

.190e~p

exp

4. ~ = .770 exp

To = To

=

~0x73)53’;

((.+ ’7’)+ (R:’y”) T-’073.6

((0+4+ (%:7’)42’) T-1298.0

~-1528.8 ((0+27’)+

~0&:73)4”72)

Internal Contact Operating Temperature (“C) Connector Ambient Temperature + Insert Temperature Rise

See folbwing page for Insett Temperature Rise Determination.

MIL-HDBK-217F

15.1

CONNECTORS,

GENERAL

(EXCEPT

PRINTED

Insert Material Determination — — ‘-Possible Insert Materials Conf guration Specification A B ‘c D Rack and Panel MIL-C-28748 x M IL-C-83733 x MIL-C-24308 x x M IL-C-28804 x x MIL-C-83513 x x Circular I

MIL-C-5015 MIL-C-26482 MIL-C-28840 MIL-C-38999 MIL-C-8151 1 MI L-C-83723

x x x

x x x x x x

x x

x x

x x

Power

MI L-C-3767 MIL-C-22992

Coaxial

MI L-C-3607 MIL-C-3643 MIL-C-3650 MI L-C-3655 MIL-C-25516 MIL-C-39012 MI L-C-55235 MIL-C-55339

x

:

MIL-C-49142

x

x

I

Triiial Insert Material Type A B

c

D

Common Insert Materials Vitreous Glass, Alumina Ceramic, Polyimide Diallylphtalate, Melamine, Fluorosilicione, Silicone Rubber, Polysulfone, Epoxy Resin Polytetrafluorethy lene (Teflon), Chbrotrifluorethylene (Kel-f) Polyamide (Nylon), Polychloroprene

x x x x x x

Temperature Ran~e (“C)* -55 to 250

*

CIRCUIT

BOARD)

Insert Tempe rature Rise (AT “I ) Determination ContacI 12 16 20 1 2 T 1 2 5 8 3 13 4 4 8 13 19 5 ; 5 18 27 6 3 8 7 4 10 23 36 46 13 30 8 5 16 57 9 37 6 70 10 7 45 19 41 15 15 96 70 26 20 25 106 39 54 30 72 35 40 92 w AT

=

0.989 (i)l ’85

22 Gauge Contacts

AT

=

0.640 (i)’ “85

20 Gauge Contacts

AT

=

0.274 (i)’ ’85

16 Gauge Contacts

AT

=

0.100 (i)l “85

12 Gauge Contacts

AT i

=

Insert Temperature Rise

=

Amperes

per Contact

RF Coaxial Connectors

AT= 5°C

RF Coaxial Connectors (High Power Applications)

AT = 50”C

-55 to 200

Mating/Unmating -55 to 125

-55 to 125

~ne These temperature ranges indicate maximum =pability of the insert material only. Connectors Jsing these materials generally have a reduced emperature range caused by other considerations of :onnector design. Applicable connector specifications contain connector operating emperature range,

Factor - KK

Mating/Unmating Cycles* (per 1000 hours) o to .05 > .05 to .5 >.5t05 >5t050 > 50 ●One cycle includes both connect

nK 1.0 1.5 2.0 3.0 4.0 and disconnect.

—

I

I MIL-HDBK-217F I

15.1

I

CONNECTORS,

GENERAL

(EXCEPT

PRINTED

CIRCUIT

BOARD)

I

Active Pins Factor - n Number of Active Cent acts

Xp 1.0 1.4 1.6 1.7

; 3 4 5 6

;::

: 9 10 11 12 13 14 15 16 17 18 19 20 25 30 35 40 45 50 55 60

::: 2.4 2.6 2.7 2.9 3.0 3.1 3.3 3.4 3.6 3.7 3.9 4.0 4.8 5.6 6.5 7.4 8.4 9.5 11 12.

Environment Factor - XE

Number of Active

~E

Contacts 65 70 75 80 85 90 95 100 105 110 115 120

125 130 135 140 145 150 155 160 165 170 175 180 185 190 195 200

q

=

0.51064

N

=

Number of Active Contacts

13 15 16 18 E 23 25 27 30 32 35 37 40 43 46 50 53 57 61 65 69 74 78 83 89 94 100

Environment

MIL-SPEC

Lower Quality

GB

1.0

2.0

GF

1.0

5.0.

%

8.0

21

Ns

5.0

10

Nu

13

27

*IC

3.0

12

%

5.0

18

%c

8.0

17

‘UF

12

25

‘RW

19

37

SF

.50

.80

MF

10

20

ML

27

54

CL

490

970

An active contact is the conductive element in a oonnector which mates with another element for the purpose of transferring electrical energy. For ooaxial and triaxial oonneotors, the shield contact k oounted as an active contact.

15-3

1

I

MIL-HDBK-217F

15.2

CONNECTORS,

PRINTED

CIRCUIT

BOARD DESCRIPTION One-Piece Connector Two-Piece Connector

SPECIFICATION MIL-C-21097 MIL-C-55302 Failures/l Base Faiture Rate - L To (“C) o 10 20 30 40 50 60 70 80 90 100

.00012 .00017 .00022 .00028 .00037 .00047 .00059 .00075 .00093 .0012 .0015

To (<)

Ab

110 120 130 140 150 160 170 180 190 200

.0018 .0022 .0028 .0035 .0044 .0055 .0069 .0088 .011 .015

06 t-iours

Connector Ter Amperes Per Contact

mrature Ri: ! (AT ‘C) Determination c tntad Guac 26 22 20 I

1 4 8 13 19

2 8 16 27 41

1

2 3 4 5

AT = 2.100 (i)’.85

1 2 5 8 13

26 Guage Contacts

AT = 0.989 (i)l .85

22 Guage Contacts

AT = 0.640 (i)’-85

20 Guage Contacts

AT = Contact Temperature Rise i

To = Internal Contact Operating

Temperature

=

Amperes per Contact

I

(°C)

Mating/Unmating

Factor - XK

l’vlating/Unmating Cycles* (Perl 000 Hours) o to .05 > .05 to .5 >.5t05 >5t050 >50

●

1.0 1.5 2.0 3.0 4.0

A cycle is defined as the mating and unrnating of a connector.

15-4

I

MIL-HDBK-217F

15.2

CONNECTORS,

Active Pins Factor - z Number of Active Contacts 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 25 30 35 40 45 50 55 60

1.0 1.4 1.6 1.7 1.9

% 75 80

2.0

E

::: 2.4 2.6 2.7 2.9

196 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 185 190 195 200

H 3.3 3.4 3.6 3.7 ::: 4.8 5.6 6.5 7.4 !; 11 12

np =

exp

N-1

() ~

CIRCUIT

BOARD

Environment Factor - ~

Number of Active Contacts

*P

PRINTED

~E

13 15 16 18 19 :; 25 27 30 32 35 37 40 43 46 50 53 57 61 65 69 74 78

Environment

MIL-SPEC

Lower C?ualit~

GB

1.0

2.0

GF

3.0

7.0

GM

8.0

17

Ns

5.0

10

Nu Alc

13

26

6.0 11

*UC

14 22

6.0

14

*UF

11

22

‘RW

19

37

SF

.50

.80

MF

10

20

ML

27

54

490

970

c,

:; 94 100

q

c1

=

0.51064

N

=

Number of Active Pins

An active contact is the conductive element which mates with another element for the purpose of transferring electrical energy.

15-5

MIL-HDBK-217F

DESCRIPTION IC Sockets, Plug-in

SPECIFICATION MIL-S-83734

‘P = %ZPXE

?b~

Type

r ~E

Environment

I

.00042

All MIL-S-83734

06 Hours

Environment Factor - XE

Base Failure Rate - ~ I

Failuresll

GB

1.0

GF

3.0 14

GM Active Pins Factor - np Number

14 16 18 20 22 24 28 36 40 48 50 64

2.6 3.1 3.4 3.7 4.0 4.3 4.6 5.3 6.7 7.4

‘IF

12

*UC

11

*UF

13

‘RW

25

9.5 13

N-1 ~

=

exp

q

=

0.51064

N

=

Number

()

8.0

Alc

9.1

np

18

Nu

2.0 2.3

6 8 10

6.0

INS 7tp

of Active contacts

.50

SE

I

MF

14

ML

36

CL

650

q

of Active Contacts

An active contact is the conductive element which mates with another element for the purpose of transferring electrical energy.

15-6

-.

---

---

.-

.

MIL-HDBK-217F

16.1

INTERCONNECTION

ASSEMBLIES

WITH

PLATED

THROUGH

HOLES

DESCRIPTION Circuit Boards, Printed (PCBS) and Discrete Wiring

Ap = Lb N1 xc [

+ N2 (ZC

+ 13)]

~Q~E

Failures/106

Hours

APPLICATION NOTE: For assemblies not using Plated Through Holes (PTH), use Section 17, Connections. A discrete wiring assembly with electrokms deposit plated through holes is basically a pattern of insulated wires laid down on an adhesive coated substrate. The primary cause of failure for both printed wiri~ and discrete wiring assemblies is associated with plated through kle pr6blems (e.g., barrel cracki~). Base Failure Rate - ~

Qud@ ~actor -

Technology Printed Wiring Assembly/Printed Circuit Boards with PTHs

i~bl

Quality

nQ

II

MIL-SPEC or Comparable Institute for Interconnecting, and Packaging Electronic Circuits (lPC) Standards

1

Lower

2

.000041

Discrete Wiring with Electroless Deposited PTH (s 2 Levels of Circuitry)

fiQ

II

.00026

Number of PTHs Factor - N, ard N&

Environment Factor - nE

Factor

Quantit~

N,

Quantity of Wave Soldered Functional PTHs

N2

Quantity of Hand Soldered PTHs I Complexity Factor - Zn

Number of Circuit Planes, P 52 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Discrete Wiring w/PTf-i Xc = .65 P.m

I

I

Environment GB

1.0

GF

2.0

GM

7.0

Ns

5.0

Nu 1.3 1.6 1.8 2.0 2.2 2.4 2.6 2.8 2.9 3.1 3.3 3.4 3.6 3.7 1 2sPs16

7CC

I

13

AC

5.0

‘IF

8.0

‘Uc

16

*UF

28

‘RW

19

SF

.50

MF

10

ML

27

c,

500

MIL-HDBK-217F

17.1

CONNECTIONS

DESCRIPTION Connections Used on All Assemblies Except Those Using Plated Through Holes (PTH)

APPLICATION NOTE: The failure rate model in this section applies to connections used on all assemblies except those using plated through holes. Use the Interconnection Assembly Model in Section 16 to account for connections to a circuit board using plated through hole technology. The failure rate of the structure which supports the connections and parts, e.g., non-plated-through hole boards and terminal straps, is considered to be zero. Solderless wrap connections are characterized by solid wire wrapped under tension around a post, whereas hand soldering with wrapping does not depend on a tension induced connection. The followiW model is for a single co~nection. -~

= ~ZQZE

Failures/l 06 Hours

Environment Factor - ZF

Base FaiJure Rate - L

u

!

Connection

Type

Hand Solder, w/o Wrapping Hand Solder, w/Wrapping Crimp Weld Solderless Wrap Clip Termination Reflow Solder

* .00014 .00026 .00005 .0000035 .00012 .000069

~Q

1,0

Manual

●

Lower

411Types

1.0

GF

2.0

GM

7.0

N~

4.0

‘IF

Automated

Standard

GB

*IC

C;mments

Crimp Types

Upper

fiE

Nu

Quaiiiy Factor - XO Quality Grade

Environment

Daily pull tests recommended.

11 4.0 6.0

‘Uc

6.0

‘UF

8.0

%w

16 .50

sF 1.0

Only MIL-SPEC or equivalent tools and terminals, pull test at beginning and end of each shift, color coded tools and terminations.

2.0

MIL-SPEC tools, pull test at beginning of each shift.

20.0

Anything less than standard criteria.

MF

—

9.0

ML

24

CL

420

1.0

~xcept Crimp

17-1

,,

MIL-HDBK-217F

18.1 SPECIFICATION MIL-M-103O4

METERS,

PANEL

DESCRIPTION Meter, Electrical Indicating, Panel Type, Ruggedized

‘P

= %nAzFnQzE

Failures/l

06 Hours

Base Failure Rate - ~

QuaI”@ Factor - ~

Type

Quality

All

.090

nQ

I

M IL-M-1 0304

1.0

Lower

3.4

Application Factor - ~A Application

I

Environment Factor - XF

Direct Current

1.0

Alternating

1.7

Current

Function Function

Factor - ~F 1

~F

1.0

Ammeter Voltmeter

1.0 I

Other*

●

I

2.8

Meters whose basic meter movement construction is an ammeter with associated conversion elements.

Environment

~E

GB

1.0

GF

4.0

%!

25

Ns

12

Nu

35

Alc

28

‘IF

42

‘Uc

58

‘UF

73

‘RW

60

SF

1,1

MF

60

ML

NIA

CL

N/A

18-1

I

MIL-HDBK-217F

19.1 SPECIFICATION MIL-C-3098

06 Hours

Base Failure Rate - ~

Environment

Factor - xc L

Frequency, f(MHz)

I

Lk u

.011

0.5

1.0

.013 .019 .022 .024 .026 .027 .028 .029 .030 .031 .032 .033 .033 .034 .035 .035 .036 .036 .037 .037 .037 .038

5.0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105

Ab =

CRYSTALS

DESCRIPTION Crystal Units, Quartz

Lp = AbXQnE Failures/l

I

QUARTZ

Environment

~E

G~

1.0

GF

3.0

GM

10

NS

6.0

NU

16

Aic

12

‘iF

17

‘Uc

22

‘UF

28

%w

23

SF

.50

MF

13

ML

32

CL

500

.o13(f).23

Quality Factor - xfi u

Quality

fiQ

MIL-SPEC

1.0

Lower

2.1

—__—_——_——__ —_____ —_—__ ___

19-1

MIL-HDBK-217F

20.1

LAMPS

DESCRIPTION Lamps, Incandescent, Aviation Sewice Lamps, Incandescent, Miniature, Tungsten-Filament

SPECIFICATION MIL-L-6363 W-L-1 11

kp = ~~u~A~E

Failures/l

06 Hours

NOTE: The data used to develop this model included randomly occurring catastrophic APPLICATION failures and failures due to tungsten filament wearout. Environment Factor - m~

Base FaiUre Rate - ~ .

Rated Voltage, Vr (Votts)

Ab

.59 .75 1.8 2.2 4.5 5.4 7.9

5 6 12 14 24 28 37.5

I Ab =

.074(vr)’

Util@ion

“29

Factor- nu

Utilization (Illuminate Hour# Equipment Operate Hours)

Environment

%E

GB

1.0

GF

2.0

GM

3.0

NS

3.0

Nu

4.0

*IC

4.0

‘IF

4.0

‘Uc

5.0

‘UF

6.0

*RW

5.0

SF

.70

MF

4.0

0.10

ML

6.0

0.10 to 0.90

0.72

cL

> 0.90

1.0

< 0.10

27

Application Factor - ~A Application Alternating Current

1.0

Direct Current

3.3

20-1

.

a..

I

1

11

I

MIL-HDBK-217+

21.1

ELECTRONIC

FILTERS,

NON-TUNABLE

DESCRIPTION Filters, Radio Frequency Interference Fitters, High Pass, Low Pass, Band Pass, Band Suppression, and Dual Functioning (Non-tunable)

SPECIFICATION MlL-F-l 5733 MIL-F-18327

The most accurate way to estimate the failure rate for electronic fitters is to sum the failure rates tor the individual compments which make up the filter (e.g., IC’s, diodes, resistors, etc.) using the appropriate models provided in this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to determine individual component failure rates. If insufficient information is available then the following defautt model can be used. Failures/l 06 Hours

~=%~xE

Base Failure Rate - ~

Environment Factor - ZE —

Type MlL-F-l

Ab

5733, Ceramic-Ferrite

.022

Construction (Styles FL 10-16, 22, 24, 30-32, 34, 35, 38, 41-43, 45, 47-50, 61-65, 70, 81-93, 95, 96) MlL-F-l 5733, Components,

Discrete LC (Styles FL 37, 53, 74)

MlL-F-l 8327, Discrete LC Components (Composltlon

.12

.12

Environment

~E

GB

1.0

GF

2.0

GM

6.0

NS

4.0

NU

9.0

*IC

7.0

‘IF

9.0

1)

M IL-F-18327, Discrete LC and Cfystai Components (Composition 2)

.27

‘Uc

11

*UF

13

‘RW

11

SF

.80

MF Quality Factor - ~

I

Quality 1

MiL-SPEC

I

7.0

ML

15

CL

120

1.0

Lower

2.9 I

21-1

l\

I

I

—

----

MIL-HDBK-217F

22.1

FUSES

DESCRIPTION Fuse, Caftridge Class H Fuse, CaMdge, High Interrupting Capacity Fuse, Current Limiter Type, Aircraft Fuse, Instrument Type Fuse, Instrument, Power and Telephone (Nonindicating), Style FO1

SPECIFICATION W-F-1726 W-F-1814 MIL-F-5372 ML-F-23419 MIL-F-15160

+)

“ %‘E‘ai1ure@106‘Wrs

APPLICATION NOTE: The reliability modeling of fuses presents a unique problem. Unlike most other components, there is very little correlation between the number of fuse replacements and actual fuse failures. Generally when a fuse opens, or “blows, - something else in the circuit has created an overload condition and the fuse is sknply functbning as designed. This model is based on life test data and represents fuse open and shorting failure modes due primarily to mechanical fatigue and corrosion. A short faiture mode is most cornmonty caused by electrically conductive material shorting the fuse terminals together causing a failure to open condition when rated current is exceeded.

Base Failure Rate - &

Environment

Type

W-F-1726, W-F-1814, MIL-F5372, MIL-F-23419, ML-F-151 60

Environment

.010

% GF

Factor - TCF

~E 1.0

2.0

%

8.0

NS

5.0

Nu AC

11 9.0

‘IF

12

‘Uc

15

*UF *RW

18 16 .90

SF MF

10

ML

21

CL

230

J

22-1

I

MIL-HDBK-217F

I

I

I I 23.1 L

MISCELLANEOUS

PARTS

- Failure Rates for Miscellaneous Parts (Failure@ 106 Hours) Failure Rate

Vibrators (M IL-V-95) 60-cycle 120-cycle 400-cycle

15 20 40

Lamps Neon Lamps

0.20

Fiber Optic Cables (Single Fiber Types Only)

0.10

Single Fiber Optic Connectors*

Microwave Elements (Coaxial & Waveguide) Attenuators (Fixed & Variable) Fixed Elements (Directional Couplers, Fixed Stubs & Cavities) Variable Elements (Tuned Stubs & Cavities)

Microwave Ferrite Devices Isolators & Circulators (S100W) Isolators & Circulators Phase

0.1 (Per Fiber Km)

See Resistors,

Type RD

Negligible

0.10 0.10x z~ 0.20 x ~E

(>100W)

O.10x?tE

Shifter (Latching)

Dummy Loads < 1 Oow

0.010 x ~E

1Oow to < 1Ooow

0.030 x n~

> 1000W

0.10 x ZE

Terminations (Thin or Thick Film Loads Used in Stripline and Thin Film Ckcults)

Caution: Excessive Mating-Demating

0.030 x fiE

Cycles May Seriously Degrade Reliability

23-1

I

MIL-HDBK-217F 23.1

MISCELLANEOUS

—

PARTS

Environment Factor - X-

k

,..

.V.

V..-

-v

.

W.O,

.V

(Durnmy

-w..-””

Environment

~E

Load

I

Environment

GB

1.0

GB

1.0

GF

2.0

GF

2.0

GM

8.0

GM

NS

5.0

N~

Nu

N“

12

10 5.0 17

*IC

5.0

AC

6.0

‘IF

8.0

‘IF

8.0

‘Uc

7.0

*UC

14

11

‘UF

22

17

*RW

25

‘UF ‘RW

SF MF

.50 9.0

ML

24

CL

450

.50

SF

I {

MF

14

ML

36

c,

23-2

a

660

MIL-tiDBK-217F APPENDIX

A:

PARTS

COUNT

RELIABILITY

PREDICTtON

Parts Ccxmt Rellablllty Prediction - This prediction method is applicable during bid proposal and early design phases when insuff-kient information is avaitable to use the part stress analysis models shown in the rndn body of this Handbook. The information needed to apptythe method is (1) generk pal ws (includlng complexity for mkrodrcults) and quantities, (2) part quallty levels, and (3) equipment environment. The equipment failure rate Is obtained by looking up a generic failure rate in one of the following tables, muttiptying it by a qualityfactor,and then summing it with failure rates obtained for other components in the equipment. The general mathematkal expressbn for equipment failure rate with this method is:

Equation 1

for a given equipment environment where: ‘EQUIP

-

Total equipment failure rate (Failure@l 06 Hours)

‘9

=

Generic failure rate for the i ‘h generk part (Failures/106

7LQ

=

Quality factor for the i ‘h generic part

Ni

=

Quantityof i ‘h generk part

n

=

Number of different generk

Hours)

part categories in the equipment

Equation 1 applies if the entire equipment is being used in one environment. If the equipment comprises several units operating in different environments (such as avionics systems with units in airborne inhabited (Al) and uninhabited (Au) environments), then Equation 1 should be applied to the portions of the equipment In each environment. These “environment-equipment” failure rates should be added to determine total equipment failure rate. Environmental symbols are defined in SeCtion 3. The quality factors to be used with each part type are shown with the appkabk

~

tables and are not

necessarily the same values that are used in the Parl Stress Anatysis. Microcircuits have an additional multiplying factor, ~L, which accounts for the maturfty of the manufacturing process. For devices in production two years or more, no rrmdiiition should be ndtiplied

is needed.

For those kI production less than two years, ~

by the appropriate XL factor (see page A-4).

ft should be noted that no generic failure rates are shown for hybrid mkrocimdts. Each hybdd is a fakfy unique devke. Since none of these devkes have been standardized, their complexity cannot be determined from their name or function. Identically or similarly named hybrids can have a wide range of complexity that thwarts categorization for pufposes of this prediction method. tf hybrids are anticipated for a design, their use and construction should be thoroughly investigated on an individual basis with application of the predktbn model in Section 5. The failure rates shown In this Appendix wem calculated by assigning model defautt values to the failure rate modets of Section !5through 23. The speclfk defaultvaJues used for the model parameters are shown with the ~ Tabtes for mkrocimults. Default parameters for atiother part cfasses are summarized in the tables startifi on Page A-12. For parts with characterfstks which differ significantly from the assumed defaults, or parls used in large quantities, the underlying models in the main body of this Handbook can be used.

A-1

I

-=——--.—-=-———a——-.

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

-*O* . .

..mi@j

I

Wml cum. 00.

C99$

ml-m

snNc9tn c9w*a 0000

eetnm 000

:f%m o-mm 0000

I

.

.

Cuu: . .

.

I

131

l–

L ●

*:I A-2

—-——–—=

—.

–—–——–———-

————–

——–-=

==

=.

—

.

.

MIL-HDBK-217F APPENDIX

A:

PARTS

U3

:

&i 0 0

o .

o

liniimil~l -_ I

13-LA

UL--l!

n

I

H

~-s

I

COUNT

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

>I IIfj +

1

ii

II(?3” I ●

—

k

—

0

.-

S

s

B

MIL-HDBK-217F APPENDIX

A:

PARTS

m

COUNT

.

. 0

1! i

!I

A --

$? A --

in

a5

A-5

--–

M

--~+=-=-..--..--

—---

–

MIL-HDBK-217F APPENDIX

# 9

A-6

A:

PARTS

COUNT

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

A-7

I

MIL-I+DBK-217F APPENDIX

A:

PARTS

.

COUNT

m

0

.

&

3

a

N

10

m

*

*

-

N

0

0

0

N ij

& 8

0

$

*, 0,

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

A-9

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

m

.

.

N

c+ U3

w

m

to

N

N

Q

h“

m F2

A-10

MIL-HDBK-217F APPENDIX

0

o

0

*.

Ui

N

d

(9

o

o.

o.

o.

Fi

A:

PARTS

COUNT

s-

C&

au

.g 8

.g

c%

ai-

d

I

C5 ●

A-II

I

11

1

1

I

la

I

I

I

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

0000 . . T--

0000000

.

FV--T-

.

w. -

.

Y-.

. Y7-

.

a—-

U

.

. .. .

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

A-13

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

A-14

I

I

m

I

MIL-HDBK-217F APPENDIX

? 0.00.0.000.00. ---v--

--

qo. -9FW-.

o.000ooo .V-WF

o

0

A:

PARTS

COUNT

qq

----

A-15

I

I

I

I

—--

I

I I

MIL-HDBK-217F APPENDIX

.0

A:

PARTS

0

0

COUNT

0

0

C9

a5 0

$+ 8 U3

m

m

m..

.

8 . if — 5 ‘* i 9

—

A-16

1

.

-.

I

MIL-HDBK-217F APPENDIX

A:

PARTS

COUNT

A-17

nn

I

AK

MIL-HDBK-217F APPENDIX

/4-18

A:

PARTS

COUNT

MIL-HDBK-217F

APPENDIX

VHSJC/VHSIGLIKE

B:

AND

VLSI CMOS

(DETAILED

MODEL)

This appendix contains the detaibd versbn of the VHSICMSI CMOS model contained in Sectbn 5.3. is provided to albw more detailed device level design trade-offs to be acxmmplkhed for predominate failure modes and mechanisms exhibited in CMOS devices. Reference 30 should be consulted for a detailed derivation of this model. CN~ + ~t)

+ ~(t)

RATUSWL

Lp(t)

~,(t)

+ ~~(t)

+ ~.~

+ ~~

Ip(t)

Pred.kted Failure Rate as a Function of Time

Aox(t)

Oxide Failure Rate

q-Jt)

Metallization Failure Rate

kc(t)

Hot Carner Failure Rate

~~~(t)

Contamination Failure Rate

k PAC

Package Failure Rate

% SD

EOS/ESD

q~(t)

Miscellaneous Failure Rate

+ ~~(t)

Failure Rate

The equations for each of the above failure mechanism failure rates are as follows:

-7.7 to) (+ox)

A %YPEO)(

Lox (in F/l 06) =

AR

~

*

OR )[

(.0788 e

5 .399 exp ~ + (t+to)a~x (( =Ox A

=

Total Chip Area (in cr#)

‘TYPEOX

=

.~

(e -7.7 AToxt )

2

In (t + to) - In t500x )

)1

for Custom and Logic Devices, 1.23 for Memories and Gate Anays

It

MIL-HDBK-217F

APPENDIX

VHSIC-VHSIC-LIKE

B:

AND

VLSI

(DETAILED

CMOS

AR

.21 cm2

Doox

Oxide Defect Density (tf unknown, use

% — ()%

MODEL)

2 where X. = 2 w

and X~ is the feature

size of the device) DR

1 Def ect/cm2 Effective Screening Time

to

(Actual Time of Test (in 106 hrs.))

‘Tox

Temperature

●

(ATOX (at Junction s~eenjm

Acceleration Factor, =

exp

‘3 - (+ [ 8.6 I7x1O 5

tern.)

(in ~))”

- *)]

(where TJ = Tc + 9JCP (in “K))

%(-JX

Eox

e

-192

(~

Maimm

1

- *)

power

&Jppiy

Votbge VDD, divided by the gate oxide thickness

(in

MV/cm) 1.3x1022 t500x

(QML) ~ox

(QML)

ATOX ‘Vex

(in 106 hrs.)

= 2 if on CNL, .5 if not.

Sgma obtained fmm test data of oxide faibres fmm the same or similar process. If not avaiiable, use a Oox value of 1.

t

time (in 106 Hours)

B-2

—

4

MIL-HDBK-217F

APPENDIX

B:

VHSIC/VHSIGLIKE

AND

VLSI

CMOS

(DETAILED

MODEL)

F FQw

&

A %YPEMET

=

‘OMET

AR

[

~ 00102

‘R

~-1 “’8 ‘O)(A ,~E~‘(e-’.’8‘TME+

-

)

1

+[(,+;fl=e.P[~( l.(t+to)-,.t50METfJ

‘R

=

Total Chip Area (in cm

=

.88 for Custom and Logic Devices, 1.12 for Memory and Gate Arrays

=

.21 cm2

5

Xo ‘OMET

=

Metal Defect Density (tf unknown use (—) x~

2 where ~

= 2 pm and X~ is the feature size of

the device)

‘R

=

1 Defect/cm*

=

Temperature

=

exp

Acceleration Factor

[ 8.6;yj0-5

‘o

= =A

t

50MET

=

(~

- A)]

Effective Screening Time ‘=

(QML)

●

(Metal

J2 A

=TCASE +,JcP

(inOK)~

(in 106 hrs.)

(at Screening Ternp (in ‘K)) .388

(TJ

Type)

●

(Actual Scmenhg

Tune (in 106 hrs))

(in 106 hrs.)

TME’

(QML) = 2 if on QML, .5 if not. Metal Type = 1 for Al, 37.5 for AI-CU or for A1-Si-Cu J a

WT

u

The mean absoMe

=

slgrna otXained from test data on electmnigration

value of Metal Current Density (in 106 Amps/cm2)

process. If this data is not available use cm t

=

failures from the same or a similar

= 1.

time (in 106 hrs.)

B-3

MIL-HDBK-217F

APPENDIX

B:

AND VLSI

VHSIGVHSIGUKE

-.5

‘50HC

=

(QML)3.74XI ‘THC

0-5

‘d

HC

(

(DETAILED

—

MODEL)

2

In (t + to) - In t50

2

%c

CMOS

)1

$u Q -2.5

Id

()

(QML) = 2 if on QML, .5 if not

.039 % tic = exp [ 8.617x10-5

Id

Drain Current at Operating Temperature.

If unknown use id = 3.5 e ‘“00’57‘J

‘sub

Substrate Current at Operating Temperature.

‘in ‘K)

If unknown use

Isub = .0058 e ‘-OOWg ‘J (in ‘K) (mA)

%

sgma derived from test data, if not available use 1.

to

ATW (at wreening

t

time (in 106 hrs.)

Temp. (in ‘K))

●

(Test Duration in 106 hours)

ATIC)N F~~TlOf!l --0028 to AT~N

%hl

.000022 e

-,0-

[+

-4$1 (where TJ = Tc + 8JCP (in ‘K))

exp [ 8.617x1O

to

e -.0028 ATCON t

5

Effective Screening Time ATmn (at screening junotion temperature (in ‘K))

t

B-4

time (in 106 hrs.)

●

(actual screening time in 106 hrs.)

(WV

MIL-t-iDBK-217F

APPENDIX

VHSIC/VHSIGLIKE

B:

%AC

=

(.0024 + l.=

x 10-5 (spins)) ~

fiE

=

See Section 5.10

7CQ

=

See Sectbn

~

AND

~T

VLSI

‘PH

Package Hermetidty Factor

%

O for Hermetic Packages

‘PH

-.5 399 exp t~~” [(~PH2

TA

10-6 exp

Pt+

ArWent

MODEL)

5.10

npT 1.0 2.2 4.7

DtP Pin Grid May Chip Carner (Surface MOUM T=hno~y)

86x

(DETAILED

+ ~~

Package Type

%0

CMOS

I

In(t) - In(tsop”))g for plastc packages

‘2 - (; [ 8.617x1O 5

- *)]

2.96 exp ~

[1

Temp. (in “K)

(mL’230[+ -+1+

(l-DC)(RIi) whereTJ= Tc + eKp On“K)

(for example, for 50% Relative Humidity, use RH = .50)

.74 time (in 106 hrs.)

B-5

MIL-HDBK-217F

APPENDIX

B:

VHSIGVHSIGLIKE

-.0002

%0s

=

“““

AND

VLSI

CMOS

(DETAILED

MODEL)

VTH

- “OOo:;&-

VTH = ESD Threshold of the device using a 100 pF, 1500 ohm discharge model

‘MIS

=

(.01 e

‘TMIS =

‘2.2 ~) ~ATMl~ ) (e -2.2 ATMIS t,

= Temperature Acceleration Factor

exp

-.423 [ 8.6317x10-5

(+

- A)]

where TJ = Tc + eJcP (in ‘K)

to = = t=

Effective Screening Time ATMl~ (at Screening Terrp

(in “K))

●

Actual Screening Time (in 106 hours)

time (in 106 hrs.)

B-6

I

7

-an

1

AC

MIL-HDBK-217F

APPENDIX

Publications tisted with “AD” nunbers National Technical hlfOtiiOfl 5285 Port Royal Road

C:

BIBLIOGRAPHY

may be obtained trom: Service

~@eM, VA 22151 (703) 487-4650 U.S. Defense Contractors may obtain copies from: Defense Technical Information Center Cameron Station - FDA, Bldg. 5 Alexandria, VA 22304-6145 (703) 274-7633 Documents with AD number prefix with the letter “B” or with the suffix “L”: These documents are in a “Limfted Distributbn” category. Contact the Defense Technical Information Center for_ procedures. Copies of MIL-STDS’S, MIL-HDBK’s, and specifications are available from: Standardization Document Order Desk 700 Robins Ave. Buikfing 4, Section D Philadelphia, PA 19111-5094 (215) 697-2667 The year of publiition of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC)) documents is part of the RADC (or FL) nunber, e.g., RADGTR-66-97 was published in 1968. 1.

“Laser Reliability Prediction,” RADC-TR-75-21

2.

“ReliabiMy Model for Miniature Blower Motors Per MIL-B-23071 B,” RADC-TR-75-178,

3.

‘High Power Microwave Tube Reliability Study,” FAA-RD-76-I

4.

“Electric Motor Reliabii~

5.

“Development

Model,” RADC-TR-77406,

AD A013735.

72, AD AO033612.

AD A0501 79.

of Nonelectronic Part Cyclic Failure Rates,”RADC-TR-77417,

This study devebped 6.

O, AD A016437.

AD A050678.

new faiture rate models for relays, switches, and connectors.

“Passive Device Failure Rate Models for MIL-HDBK-217B,”

RADC-TR-~432,

AD A050180.

This study developed new failure rate models for resistors, capacitors and inductive devices. 7.

“Quantification of Printed Circuit Boatd Connector ReWMtty,”

8.

“Crimp Connection Reliability,” RADC-TR-78-15,

9.

“LS1/Micmprocessor

10.

“A Re@nda~

11,

“Revision of Environmental Faofors for MIL-HDBK-217B,”

Reliabilii

RADC-TR-77-433,

AD A050505.

Prediction Model Development,”

Notebook,” RADC-TR-77-287,

AD A049980.

RADC-TR-79-97,

AD A06891 1.

AD A050837. RADC-TR-80-299,

AD A091837.

L-1

.—

MIL-HDBK-217F

APPENDIX

C:

BIBLIOGRAPHY

12.

Traveling

Wave Tube Failure Rates,- RADC-TR-80-288,

13.

“Reliability Predict&n Modeling of blew Devices, - RADC-TR~237, This study devebped mernortes.

AD A096055. AD A090029.

failure rate nmdek for magnetic bubble memories and charge~upkf

14.

“Failure Rates for Fiber Optic Assemblies,” RADC-TR-80-322,

15.

“Printed Wiring Assembly and Interconnection

AD A092315.

ReliabMfy,” RADC-TR-81 -318, AD Al 11214.

This study dwebped faihn fate modets for printed wtrfng asae~s, solderless wrap assanbfies, wrapped and soldered assemblies and discrete wirfng assemblies with ebctroless depostted plated through holes. 16.

“Avionio Etimentat

F_

for MIL-HOBK-21 7,” RADC-TR-81 -374, AD B084430L.

17.

“RADC Thermal Guide for Reliability Engineers,” RADC-TR-82-1

18.

“Reliability Modeling of Critical Electronic Devices,” RADC-TR-83-1

72, AD Al 18839. 08, AD Al 35705.

This report devebped failure rate prediction procedures for magnetrons, vidicions, cathode ray tubes, semiconductor lasers, helium-cadtim lasers, heiiim-neon lasers, Nd: YAG lasers, electronic filters, sofid state relays, time delay relays (electronic hybrid), circuit breakers, I.C. Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps, neon gbw lamps and surface acoustic wave devices. 19. This study developed failure rate models for nonoperating periods. 20.

“RADC Nonelectronic Reliability Notebook,” RADC-TR-85-194,

AD A163900.

This report contains failure rate data on rnechanicaf and electromechanical parts. 21.

“Reliabilii

Prediction for Spacecraft,” RADC-TR-85-229,

AD A149551.

TMs study kwestigated the reliability performance h@ories of 300 Satellite vehicles and is the basis for the halving of all model %E factors forMIL-HDBK-217E to MIL-HDKB-21 7E, Notice 1. 22.

“Surface Mount Technology: A Reliability Review; 1986, Available from Reliabilii PO BOX 4700, Rome, NY 13440-8200, 800-526-4802.

23.

‘Thermal Resktames AD B1084I7.

24.

“Large Scale Memory Emr

of Joint Army Navy (JAN) Certified Microcimuif Pa&ages,”

Detection and Correction? RADC-TR-87-92,

Anatysis Center,

RADC-TR46-97,

AD B1 17785L.

study developed models to cakwlate memory system reliiility for memories incorporating error detecting and correcting codes. For a summary of the study see 1989 IEEE ReliabiMy and Maintainability SymposUm Proceedings, page 197, “Accounting for Soft Errors in Memory Reliability Prediiion.a

This

25.

c-2

“Reliability Analysis of a Surface Mounted Package Using Finite Element Simulation,” RADC-TR-87177, AD A189488.

MIL-HDBK-217F

APPENDIX

26.

“VHSIC Impact on System Reliability,” RADC-TR-86-13,

27.

“Reliability Assessment of Surface Mount Technology,” RADC-TR-68-72,

28.

“Reliability Prediction Models for Discrete Semiconductor

C:

BIBLIOGRAPHY

AD B122629. AD A193759.

Devices, - RADC-TR-88-97,

AD A200529.

This study developed new failure rate prediction modets for GaAs Power FETS, Transient Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator D-. 29.

“Inqxmt of Fiber Optics on System Reliability and Maintainabilii,”

30.

“VHSWVHSIC

RADC-TR-88-124,

Like Rel&bi14y Prediotlon Modeling,” RADGTR-69-I

AD A2CH946.

71, AD A214601.

This study provides the basis for the VHSIC model appearing in MIL-HDBK-21 7F, Section 5. 31.

“Reliability Assessment Using Finite Element Techniies,m

RADC-TR-89-281,

AD A21 6907.

This study addresses surface mounted solder interconnections and miorowire board’s platedthru-hole (PTH) connections. The report gives a detailed account of the factors to be considered when performing an FEA and the procedure used to transfer the results to a reliability figure-of-merit. 32.

“Reliability Analysis/Assessment

of Advanced Technologies,”

This study provides the basis for the revisedmicmchwit Memories) appearing in MIL-HDBK-217F, Sectii 5.

RADC-TR-90-72,

ADA 223647,

models (except VHSIC and Bubble

33.

“Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices,” AFWAL-TR-811052,

34.

“Reliability/Desgn

35.

“NASA Parts Application Handbook,” MIL-HDBK-976-B (NASA). This handmok is a five vohnne series which dfscusses a full range of eiectrfcal, electronic and electromechanical component parts. It provides extensive detailed technical informatbn for each component part such as: definitions, oonstructbn details, operating characteristics, derating, failure mechanisms, screening techniques, standard parts, environmental considerations, and circuit appliition.

36.

‘Nonelectronic Parts Reliability Data 1991 ,“ NPRD-91. TM report contains field ?aiture rate data on a variety of ektrical, mechanical, electromechanical and microwave parts and assernblii (1 400 different part types). It is available from the Re@bMty AnaJysis Center, PO Box 4700, Rome, NY 13440-6200, Phone: (315) 337-0900.

Thermal Applications,” MIL-HDBK-251.

Custodians: Amy-CR Navy - EC Air Fome -17

Preparing Activity: Air Force -17 Project No. RELI-0064

c-3

.

—— ---- . .. .

I

MIL-HDBK-217F

APPENDIX

C:

BIBLIOGRAPHY

Review AcWtWs: Army - Ml, AV, ER Navy - Sl+, AS, OS ~rForce -11, 13, 14, 15, 18, 19,99 User Activities: Army - AT, ME, GL Navy - CG, MC, YD, TD Alr Force -85

I

c-4

.

ImE:Thistcumm aynott Jeusod*=7wt*d

Qmult cmamsnd mnuactd

Camnoms sdlmbdanmsbfmtinat

doaunsm, norbrupostwdvus, ddatkm, udwikatkmofspedk=bn~sm Oons$mw orhplyuthofizdcm mwdvearly podtJnd thodsr9ncdcka8na w8)wb

nquhm9nts.

(Fo#dahg

lt?ishe)

(FM abng this line) DEPARTMENT OF THE AIR ~E RUERSS GrWfissAFB, NY 13441-5700

NO 111111 n MAIL

POSTAGE

\

OFFKXAL BUSINESS FOR PRtVATE USE S300 t331ALTY

NECESSARY IF MAILED IN THE UNITED STATES

l~S

FRSTCtASS

=LY W-

tm. -

w~m

Rome laboratory AlTN: RIJERSS Griffiss AFB, NY 13441-5700

...

.

.

,

..

D.c. Am~=

STANDARDIZATION

DOCUMENT IMPFtOVEhtENT (set?hstructbn - I?eveme Ski@

PROPOSAL

1. ability PnWidon . —

of Electronic E@pment m m)

•1 D

c1

Parag~

MAMJFAcnmE.R

Nuntxw and Wording:

Wording

ReaaodRaIionab

6.

\or

R~rnrnerKMon

:

REMARKS

‘a b

Ss (s-a

my,St-, ZP

DD .% 1426

PREVIOUS EDfTION IS OBSUETE