MG600J2YS61A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ Compact IGBT Series Module 600 Amperes/600 Volts
A D
L
J
K
W
N
M V
E2
C1
C
H B
DETAIL "A"
F E
C2E1
U W R
R
T
S Z
Q
P
Y X
X Q G C1 7 5
5
6
AA
FO
6 7 4
8
BB
E1/C2
3 1
4
BB
2
OT
1 2
FO
BB
3
DETAIL "A" E2
SIGNAL TERMINAL 1 G(L) 2 FO(L)
3 E(L) 4 VD
5 G(H) 6 FO(H)
7 E(H) 8 OPEN
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N
5/05
Inches 4.80±0.04 1.97±0.01 1.61±0.03 4.33±0.01 2.44±0.04 2.32±0.02 4.69±0.02 0.60 0.63 0.51 0.24 0.22 Dia. 1.42±0.03
Millimeters 122.0±1.0 50.0±0.3 41.0±0.8 110.0±0.3 62.0±1.0 59.0±0.5 119.0±0.5 15.24 16.0 13.0 6.0 5.5 Dia. 36.0±0.8
Dimensions Inches Millimeters P M6 M6 Q 0.79±0.03 20.0±0.8 R 1.02±0.03 26.0±0.8 S 1.44±0.03 36.7±0.8 T 0.24 Rad. 6.0 Rad. U 0.02 0.64 V 0.60 15.3 W 0.41±0.03 10.5±0.8 X 1.02 -0.01/+0.04 26.0 -0.3/+1.0 Y 1.48 -0.02/+0.04 37.5 -0.5/+1.0 Z 0.01 Dia. 3.0 Dia. AA 1.00±0.023 25.4±0.6 BB 0.10 2.54
Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Over-Current and Over-Temperature Protection £ Low VCE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG600J2YS61A is a 600V (VCES), 600 Ampere Dual IGBTMOD™ Compact IGBT Series Module. Type
Current Rating Amperes
VCES Volts (x 10)
MG
600
60 1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module 600 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics
Symbol
MG600J2YS61A
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Operating Temperature Range
Tope
-20 ~ 100
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Power Device Junction Temperature
Module Weight (Typical)
—
375
Grams
VISO
2500
Volts
Collector-Emitter Voltage
VCES
600
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
600
Amperes
ICP
1200
Amperes
IE
600
Amperes
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
IGBT Inverter Sector
Collector Current (TC = 25°C) Peak Collector Current (TC = 25°C) Emitter Current (TC = 25°C) Peak Emitter Current (TC = 25°C)
IEM
1200
Amperes
Collector Dissipation (TC = 25°C)
PC
2770
Watts
IGBT Control Sector Control Voltage (OT)
VD
20
Volts
Fault Input Voltage
VFO
20
Volts
Fault Input Current
IFO
20
mA
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGES
VGE = ±20V, VCE = 0V
—
—
-4 / +3
mA
VGE = 10V, VCE = 0V
—
—
100
nA
IGBT Inverter Sector Gate Leakage Current Collector-Emitter Cutoff Current
ICES
VCE = 600V, VGE = 0V
—
—
1.0
mA
Gate-Emitter Cutoff Voltage
VGE(off)
VCE = 5V, IC = 600mA
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
VGE = 15V, IC = 600A, Tj = 25°C
—
2.2
2.5
Volts
VGE = 15V, IC = 600A, Tj = 125°C
—
—
2.8
Volts
Input Capacitance
Cies
Inductive Load
td(on)
Switching Times
2
VCE = 10V, VGE = 0V, f = 1MHz
—
125
—
nF
0.1
—
1.0
µs
toff
VCC = 300V, IC = 600A,
—
—
2.0
µs
tf
VGE = ±15V, RG = 5.1Ω
—
—
0.5
µs
—
—
0.5
µs
IE = 600A
—
2.2
2.6
Volts
Reverse Recovery Time
trr
Emitter-Collector Voltage
VEC
5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module 600 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Fault Output Current
OC
VGE = 15V
720
—
—
A
Over-Temperature
OT
—
100
—
125
°C
td(Fo)
VCC = 300V, VGE = ±15V
—
—
6.5
µs
Control Sector
Fault Output Delay Time
Thermal Characteristics Characteristic Junction to Case Thermal Resistance Contact Thermal Resistance
Symbol
Condition
Min.
Typ.
Max.
Units
Rth(j-c)Q
IGBT (Per 1/2 Module)
—
—
0.045
°C/Watt
Rth(j-c)D
FWDi (Per 1/2 Module)
—
—
0.068
°C/Watt
—
0.013
—
°C/Watt
Value
Units
Rth(c-f)
—
Recommended Conditions for Use Characteristic
Symbol
Condition
Supply Voltage
VCC
Applied across C1-E2 Terminals
≤375
Volts
Gate Voltage
VGE
—
13.8 ~ 16
Volts
Gate Resistance
RG
—
≥5.1
Ω
Switching Frequency
fC
—
0 ~ 20
kHz
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
600 15V
500 12V
400
VGE = 20V
10V
300 200
9V
100
0
1
2
3
4
300
9V
200 100
1
2
3
4
400 300 200 100 0
5
0
0.5
1.0
1.5
2.0
2.5
3.0
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
FORWARD VOLTAGE, VF, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
IC = 900A
8 IC = 600A
6 IC = 300A
4 2
0
5
10
15
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
Tj = 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
0
12
12 Tj = 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
10V
VGE = 20V
500
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
12
5/05
15V
400
0
VGE = 0V Tj = 25°C Tj = 125°C Tj = -40°C
12V
500
0
5
600 Tj = 25°C
FORWARD CURRENT, IF, (AMPERES)
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
600
0
FREE-WHEEL DIODE CHARACTERISTICS (TYPICAL)
10 IC = 900A
8 IC = 600A
6 IC = 300A
4 2 0
0
5
10
15
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
Tj = -40°C
10 IC = 900A
8 IC = 600A
6 IC = 300A
4 2 0
0
5
10
15
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module 600 Amperes/600 Volts
600 400
2
4
6
8
10
0
0
100 200 300 400 500 600 700
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL)
TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL)
FALL TIME VS. COLLECTOR CURRENT (TYPICAL)
103
102
100 200 300 400 500 600 700
103 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
SWITCHING TIME, tf, (µs)
103
0
102 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
101
100 200 300 400 500 600 700
0
100 200 300 400 500 600 700
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
RISE TIME VS. COLLECTOR CURRENT (TYPICAL)
TURN-OFF TIME VS. GATE RESISTANCE (TYPICAL)
TURN-ON TIME VS. GATE RESISTANCE (TYPICAL)
103
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
101 100 200 300 400 500 600 700 COLLECTOR CURRENT, IC, (AMPERES)
104
SWITCHING TIME, ton, (µs)
102
SWITCHING TIME, toff, (µs)
104
0
103
102
100 200 300 400 500 600 700
104
0
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, td(on), (µs)
SWITCHING TIME, td(off), (µs)
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
102
12
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
102
SWITCHING TIME, tr, (µs)
103
200
0
SWITCHING TIME, ton, (µs)
800
104
4
104
104 VCE = 5V Tj = 25°C Tj = 125°C Tj = -40°C
SWITCHING TIME, toff, (µs)
COLLECTOR CURRENT, IC, (AMPERES)
1000
0
TURN-ON TIME VS. COLLECTOR CURRENT (TYPICAL)
TURN-OFF TIME VS. COLLECTOR CURRENT (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
103 VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C
102
0
5
10
15
20
GATE RESISTANCE, RG, (Ω)
25
103 VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C
102
0
5
10
15
20
25
GATE RESISTANCE, RG, (Ω)
5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module 600 Amperes/600 Volts
TURN-OFF DELAY TIME VS. GATE RESISTANCE (TYPICAL)
TURN-ON DELAY TIME VS. GATE RESISTANCE (TYPICAL)
104
103 VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C
0
5
10
15
20
102
25
20
102
25
0
5
5
10
15
20
SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL)
SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL)
10
20
101 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
100
25
0
101 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
100
100 200 300 400 500 600 700
0
100 200 300 400 500 600 700
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL)
SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL)
REVERSE RECOVERY CURRENT (TYPICAL)
103
102
5
10
15
20
GATE RESISTANCE, RG, (Ω)
25
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
102
101
25
102 SWITCHING LOSS, Eon, (mJ/PULSE)
SWITCHING LOSS, Eoff, (mJ/PULSE)
15
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
0
0
RISE TIME VS. GATE RESISTANCE (TYPICAL)
SWITCHING LOSS, Eon, (mJ/PULSE)
SWITCHING TIME, tr, (µs)
15
102
103 SWITCHING LOSS, Eoff, (mJ/PULSE)
10
GATE RESISTANCE, RG, (Ω)
103
5/05
5
103
GATE RESISTANCE, RG, (Ω)
VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C
101
0
VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C
GATE RESISTANCE, RG, (Ω)
104
102
103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
102
104 VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C
SWITCHING TIME, tf, (µs)
SWITCHING TIME, td(on), (µs)
SWITCHING TIME, td(off), (µs)
104
FALL TIME VS. GATE RESISTANCE (TYPICAL)
0
5
10
15
20
GATE RESISTANCE, RG, (Ω)
25
103 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
102
101
0
100
200
300
400
500
600
EMITTER CURRENT, IE, (AMPERES)
5
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module 600 Amperes/600 Volts
REVERSE RECOVERY LOSS VS. FORWARD CURRENT (TYPICAL)
REVERSE RECOVERY TIME (TYPICAL )
VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
101
0
100
200
300
400
500
600
100 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C
10-1
0
REVERSE BIAS SAFE OPERATION AREA (TYPICAL) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IiC, (AMPERES)
103
102
101
100
VGE = ±15V RG = 5.1Ω Tj ≤ 125°C
0
100 200 300 400 500 600 700
500
1000 2000 3000 4000 5000 6000 GATE CHARGE, QG, (nC)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
100
101
102
IC = 300A RL = 0.5Ω Tj = 25C
16 12
200V
300V 100V
8
VCE = 0V
4 0
0
1000 2000 3000 4000 5000 6000 GATE CHARGE, QG, (nC)
100 TC = 25°C TRANSIENT IMPEDANCE, Rth(j-c)
TRANSIENT IMPEDANCE, Rth(j-c)
20
100
TC = 25°C
10-1
10-2
10-3 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.045°C/W
10-4 10-3
10-2
10-1 TIME, (s)
6
Cres
10-1
GATE-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
Coes
COLLECTOR-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL)
200
0
104
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
300
0
Cies
105
EMITTER CURRENT, IE, (AMPERES)
IC = 300A RL = 0.5Ω Tj = 25C
400
VGE = 0V f = 1MHz TC = 25°C
103 10-2
100 200 300 400 500 600 700
EMITTER CURRENT, IE, (AMPERES)
104
CAPACITANCE, Cies, Coes, Cres, (pF)
102
106
101
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE)
REVERSE RECOVERY TIME, trr, (ns)
103
CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL)
100
101
10-1
10-2
10-3 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.068°C/W
10-4 10-3
10-2
10-1
100
101
TIME, (s)
5/05