Icemos Technology Ltd

IceMOS Technology, Ltd.

Corporate Headquarters:

Factory Location:

7855 South River Parkway, Suite 122 Tempe, AZ 85285 (USA)

5 Hannahstown Hill Belfast BT17 0LT (UK)

Phone: (602) 288-5870 Fax : (602) 288-5871

Phone: +44 2890-574700 Fax : +44 2890-574746

IceMOS Technology, Ltd. Website: www.icemostech.com Company Structure: Privately Held

Year Founded: 2004 Employees: 35

Company Profile: Š IceMOS Technology Ltd is a privately held company with a global sales presence using direct and distributor sales channels. Š Originally founded as BCO Technologies in 1993, IceMOS has over 14 years of experience as a provider of value-added “Advance Engineered Substrates”. We have built a reputation in the market for excellent quality. Š IceMOS welcomes projects requiring design or development work to truly match the customer’s needs and requirements.

Primary Business: Š Thick Film (>1.5 µm) SOI Substrates - High Temperature Annealed Bonding - Standard Single Layer SOI Š Si-Si Direct Bonded Wafers Substrates - Excellent Cost Alternative to Epi - Ultra High Resistivity Epi for RF Applications - High Resistivity Epi for Photodiode & Photo IC Applications Š Double Side Polished Silicon Wafers - 100 and 150mm Diameters - Standard (TTV < 3um)

- Ultra flat (TTV < 1um) - Thickness (100~500um and 200~600um)

Š Advance Engineered Substrate Wafers (SOI or Bulk Si) - Trench & Refilled SOI Substrate - Cavity Bonded SOI Substrates - Multiple Layer SOI Substrates - Through Silicon Via (TSV) - Customized to Desired Spec

Technical Expertise: Š Deep Reactive Ion Etching (DRIE) With Refill Options - Etch processes capable up to 100µm deep trenches - Trenched areas up to 85% of exposed silicon area - Aspect ratios up to 40:1, with typical ratios from 10:1~15:1 in production Š Silicon Wafer Bonding - High temperature anneal bonding Š Wafer Thinning - Precision grind and polish with +/- 1µm absolute thickness and TTV of < 1µm

Company Attributes: Š Engineering Expertise: Experienced design and manufacturing engineering support for development or mas-production Š Cost Efficient: Low overhead structure in place without sacrificing customer satisfaction Š Small and Flexible: Cost competitive batch manufacturing Š Best in Class Quality Systems: - World Class Systems: ISO 9000:2000 quality systems - Complete Lot Tracking: Full batch history and wafer tracking available - In-house Failure Analysis: Equipment and expertise for in-process and post sales analysis

Factory Information: Š Bonded Wafer Production: - 100, 125, 150, and 200mm wafer diameter capability - Over 5,000 square feet of clean-room production floor space Š Modeling: - Full Device and Process Simulation (Silvaco Athena/ATLAS) Š Processing: - Deep RIE process - Projection Alignment - Front & Backside contact alignment Oxidation (dry/wet) - LPCVD TEOS + Poly - Polysilicon & Oxide CMP Planarisation - Low Temp Oxide Passivation - Aluminium Metal deposition - Phos, Arsenic, Boron Implant

Memberships and Certifications:

IceMOS Operating Locations

Global Distribution Network: Korea:

Middle East:

Dooson Inc Dooson Bldg. 1F 67-30 Kuui-Dong, Kwangjin-Ku Seoul, Korea 143-819 Tel : (82) 2 444 5375 Fax : (82) 2 444 4104 web: www.dooson-inc.co.kr

Dashro 2 Bosmat St., P.O. Box 3147 Shoham, Israel 73142 Tel: +972-52-3227484 Fax: +972-3-9793932 web: www.dashro.co.il

Japan:

Taiwan:

Electronics and Materials 11-11 Funado-cho, Ashiya-shi Hyogo-ken 659-0093 Japan Tel: 0797-34-7007 Fax: 0797-34-7008 web: www.eandmint.co.jp

Aceteam Corporation Tai Yuen Hi-Tech Industrial Park 3F-2, No. 26, Tai Yuen Street Chupei City, Hsinchu 302 Taiwan Tel: +886-3-552-6869 Fax: +886-3-552-6859 web: www.aceteam.com.tw

Engineered Substrate Photo Gallery:

TSV

TSV (cut away)

• Silicon Device (20um) • Buried Oxide (1um) • Silicon Device (70um) • Buried Oxide (1um) • Doped Polysilicon (1um) • Buried Oxide (1um)

Multi-Layer SOI

SOI With Deep Trench Isolation

Microfluidic Channels

Cavity Bonded SOI

Engineered Substrate Photo Gallery:

Silicon Gears

High Resolution Accelerometer