For Sure > Info_what Is Fram

FRAM-Ferroelectric RAM FRAM® is nonvolatile and writes fast! Ferroelectric memory, FRAM (Ferroelectric RAM) is a non-volatile memory offering high-speed writing, low power consumption and long rewriting endurance. It reduces the burden of OEM development because there is no need to differentiate between RAM and ROM. Furthermore, because no batteries are needed, the use of FRAM has benefits for manufacturing, maintenance and the environment. Fujitsu FRAM products include LSI devices for standalone memory smart cards and RFID. We also respond flexibly to customer requirements by creating custom LSI. Fujitsu has to date (December 2005) delivered more than 300 million FRAM devices. We lead the world in developing and manufacturing FRAM. Definition of: FeRAM (FerroelectricRAM) A non-volatile memory technology that uses a ferroelectric capacitor to store a binary state (0 or 1) as two voltages. It uses one or two transistors to read and write the capacitor. FeRAM was designed to replace flash memory because it writes faster and uses less power. It can also be more easily integrated with other circuits on a semiconductor chip than flash. See ferroelectric capacitor.