Agc - Asahi Mems Glass Wafers
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ASAHI GLASS SW-GLASS WAFERS FOR MEMS HIGHLIGHTS ●
Anodic bonding is a very popular tool for MEMs (Micro Electronic Mechanical Systems) devices.
●
Many of MEMs devices use glass covers for protecting silicon structure in advance the dicing process. ● ●
●
The typical condition of the anodic bonding process is 400 to 600 C and 400-1000V. Borosilicate glass such as Pyrex is very popular as the bonding glass in this process, but the coefficient thermal expansion (CTE) curve of borosilicate glass is not equal to that of silicon. ● The unmatched CTE causes compression or tension in between silicon and borosilicate glass.
The thermal expansion of SW-series glass was carefully designed to match the CTE of the MEMs silicon substrate. ● ●
Over wide range of temperature thereby minimizing stress or compression loads. SW-YY glass can be bonded in lower temperature or voltage condition by adding Lithium with smaller molecular diameter than Sodium as alkali component in glass. ● SW-YY glass was designed to minimize the compression or tension on glass wafer of MEMs devices ● The bonding condition of SW-YY glass is 50C-100C lower than conventional borosilicate glass, SW-3 and SW-Y.
ELECTRONIC MATERIALS
Page 30
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES UNITS
SW-3
SW-Y
36 615 660 890 1.2
33 630 675 895 1.1
SW-YY PYREX NOTES
Thermal properties －７
Expansion Coefficient ×10 /C Strain Point C Annealing Point C Softening Point C Thermal conductivity W/m.K
Mechanical properties Density Young Modulus Shear Modulus Poisson’s Ratio Viker’s Hardness Flexural strength
33 590 640 850 1.1
33 510 560 820 1.1
average (30-300C)
by LASER flash method
0.1 GPa GPa GPa Mpa
2.54 80 34 0.19 6.1 97.0
2.52 78 33 0.18 6.1 97.0
2.46 82 34 0.2 5.8 97.0
2.23 64 27 0.20 6.0 95.0
1.520
1.519
1.518
1.474
Optical properties Refractive Index
nd(589.3nm)
●
Electrical properties Ohm cm Log Volume Resistivity Ohm cm Dielectric Constant Loss Tangent
Chemical properties Acid Durability Alkali Durability Water Durability
Anodic Bonding Wafers:
mg/cm2 mg/cm2 mg/cm2
10.6 8.3 6.1 0.01
10.7 8.3 6 0.01
10.3 7.8 6.3 0.01
11.9 9.4 4.6 0.01
100C 200C R.T. , 1MHz R.T. , 1MHz
0.30 0.09 0.05
0.16 0.17 0.07
0.09 0.16 0.05
0.01 0.14 0.04
1/100N HNO3 96C×20h Dipping
Na2O
Na2O
Li2O
Up to 6” Dia.
5% NaOH 80%× 1h Dipping Deionized water 95C×40h Dipping
Others Alkali - Component Characters
Standard TypeSimilar CTE Lower temp w/ silicon
bonding
Remarks: C - - - Degree Centigrade, Ohm -- The unit of resistance
ELECTRONIC MATERIALS
Page 31
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Thermal Expansion Accumulated expansion curve 1800 1600 Expansion (ppm)
1400 1200
SW-3 SW-Y SW-YY PYREX
1000 800 600 400 200 0 30 70 110 150 190 230 270 310 350 390 430 Temperature（C）
ELECTRONIC MATERIALS
Page 32
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Thermal Expansion Coefficient Thermal Expansion SW-YY has Excellent CTE Match with Si
Expansion（X10-6/C）
4.5 4
SW-3 SW-Y SW-YY PYREX Silicon
3.5 3 2.5 2 30
70 110 150 190 230 270 310 350 390 430 Temperature（℃）
ELECTRONIC MATERIALS
Page 33
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Processing Characteristics SW-YY bonds with silicon in lower temperature and low voltage. (+) Heater Si Glass Heater & Electrode
Silicon: 4" X 0.5mm thickness Glass : 4" X 2.5mm thickness (-)
Under vacuum condition
SW-Y, PYREX
Si bonds with Glass Si bonds with Glass Not bonded
ELECTRONIC MATERIALS
Not bonded
Page 34
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Machining for both SW-YY and borosilicate glass wafer Wafer dimensions (Standard dimension): ●
Diameter : 3” to 6” +/- 0.0197” (+/- 0.5mm)
●
Available size: 3”, 4”, 5” and 6”
●
Thickness : 0.0118” to 0.197” +/-0.00197” (0.3 to 5.0mm +/- 0.05mm)
●
Flatness (Warp) : < 10 µm (4”), < 30µm(6")
●
Roughness : R a < 10 nm
●
TTV : Total Thickness Variation < 10µm
●
Surface finish : Both sides polished
●
Orientation flat : SEMI standard flat upon request
Holes and Cavities: ●
We apply the most appropriate fabrication method to the required dimensions and patterns.
Patterning & Metallizing ●
Through holes : Rectangular or custom patterning
●
Cavity : Rectangular or custom patterning
●
Combination : We can manufacture special patterning with holes and cavities.
●
Metallizing : Pt, Cr, Au, Ni or Ti spattering/deposition upon request
ELECTRONIC MATERIALS
Page 35
Anodic bonding is a very popular tool for MEMs (Micro Electronic Mechanical Systems) devices.
●
Many of MEMs devices use glass covers for protecting silicon structure in advance the dicing process. ● ●
●
The typical condition of the anodic bonding process is 400 to 600 C and 400-1000V. Borosilicate glass such as Pyrex is very popular as the bonding glass in this process, but the coefficient thermal expansion (CTE) curve of borosilicate glass is not equal to that of silicon. ● The unmatched CTE causes compression or tension in between silicon and borosilicate glass.
The thermal expansion of SW-series glass was carefully designed to match the CTE of the MEMs silicon substrate. ● ●
Over wide range of temperature thereby minimizing stress or compression loads. SW-YY glass can be bonded in lower temperature or voltage condition by adding Lithium with smaller molecular diameter than Sodium as alkali component in glass. ● SW-YY glass was designed to minimize the compression or tension on glass wafer of MEMs devices ● The bonding condition of SW-YY glass is 50C-100C lower than conventional borosilicate glass, SW-3 and SW-Y.
ELECTRONIC MATERIALS
Page 30
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES UNITS
SW-3
SW-Y
36 615 660 890 1.2
33 630 675 895 1.1
SW-YY PYREX NOTES
Thermal properties －７
Expansion Coefficient ×10 /C Strain Point C Annealing Point C Softening Point C Thermal conductivity W/m.K
Mechanical properties Density Young Modulus Shear Modulus Poisson’s Ratio Viker’s Hardness Flexural strength
33 590 640 850 1.1
33 510 560 820 1.1
average (30-300C)
by LASER flash method
0.1 GPa GPa GPa Mpa
2.54 80 34 0.19 6.1 97.0
2.52 78 33 0.18 6.1 97.0
2.46 82 34 0.2 5.8 97.0
2.23 64 27 0.20 6.0 95.0
1.520
1.519
1.518
1.474
Optical properties Refractive Index
nd(589.3nm)
●
Electrical properties Ohm cm Log Volume Resistivity Ohm cm Dielectric Constant Loss Tangent
Chemical properties Acid Durability Alkali Durability Water Durability
Anodic Bonding Wafers:
mg/cm2 mg/cm2 mg/cm2
10.6 8.3 6.1 0.01
10.7 8.3 6 0.01
10.3 7.8 6.3 0.01
11.9 9.4 4.6 0.01
100C 200C R.T. , 1MHz R.T. , 1MHz
0.30 0.09 0.05
0.16 0.17 0.07
0.09 0.16 0.05
0.01 0.14 0.04
1/100N HNO3 96C×20h Dipping
Na2O
Na2O
Li2O
Up to 6” Dia.
5% NaOH 80%× 1h Dipping Deionized water 95C×40h Dipping
Others Alkali - Component Characters
Standard TypeSimilar CTE Lower temp w/ silicon
bonding
Remarks: C - - - Degree Centigrade, Ohm -- The unit of resistance
ELECTRONIC MATERIALS
Page 31
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Thermal Expansion Accumulated expansion curve 1800 1600 Expansion (ppm)
1400 1200
SW-3 SW-Y SW-YY PYREX
1000 800 600 400 200 0 30 70 110 150 190 230 270 310 350 390 430 Temperature（C）
ELECTRONIC MATERIALS
Page 32
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Thermal Expansion Coefficient Thermal Expansion SW-YY has Excellent CTE Match with Si
Expansion（X10-6/C）
4.5 4
SW-3 SW-Y SW-YY PYREX Silicon
3.5 3 2.5 2 30
70 110 150 190 230 270 310 350 390 430 Temperature（℃）
ELECTRONIC MATERIALS
Page 33
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Processing Characteristics SW-YY bonds with silicon in lower temperature and low voltage. (+) Heater Si Glass Heater & Electrode
Silicon: 4" X 0.5mm thickness Glass : 4" X 2.5mm thickness (-)
Under vacuum condition
SW-Y, PYREX
Si bonds with Glass Si bonds with Glass Not bonded
ELECTRONIC MATERIALS
Not bonded
Page 34
ASAHI GLASS SW-GLASS WAFERS FOR MEMS PROPERTIES Machining for both SW-YY and borosilicate glass wafer Wafer dimensions (Standard dimension): ●
Diameter : 3” to 6” +/- 0.0197” (+/- 0.5mm)
●
Available size: 3”, 4”, 5” and 6”
●
Thickness : 0.0118” to 0.197” +/-0.00197” (0.3 to 5.0mm +/- 0.05mm)
●
Flatness (Warp) : < 10 µm (4”), < 30µm(6")
●
Roughness : R a < 10 nm
●
TTV : Total Thickness Variation < 10µm
●
Surface finish : Both sides polished
●
Orientation flat : SEMI standard flat upon request
Holes and Cavities: ●
We apply the most appropriate fabrication method to the required dimensions and patterns.
Patterning & Metallizing ●
Through holes : Rectangular or custom patterning
●
Cavity : Rectangular or custom patterning
●
Combination : We can manufacture special patterning with holes and cavities.
●
Metallizing : Pt, Cr, Au, Ni or Ti spattering/deposition upon request
ELECTRONIC MATERIALS
Page 35
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