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FABRICATION AND CHARACTERIZATION OF Au/n-SI/Au METAL SEMICONDUCTOR METAL STRUCTURE
PROJECT REPORT Submitted for partial fulfillment of the requirements for the Degree of Bachelor’s in Technology FROM The Institute of Radiophysics and Electronics,University of Calcutta IN The Academic Year : 2007-2008 Under the guidance of
PROF J.P.Bandyopadhyay By SOUMO GHOSAL University College of Technology INSTITUE OF RADIOPHYSICS AND ELECTRONICS
92,Acharya Prafulla Chandra Road Calcutta-700009, INDIA
UNIVERSITY
OF CALCUTTA
University College of Technology INSTITUE OF RADIOPHYSICS AND ELECTRONICS Telephone : (+91) (33) 350-9115/9116/9413 Road Telegram : INRAPHEL Fax : (+91) (33) 351-5828 e-mail : [email protected]
92,Acharya Prafulla Chandra Calcutta-700009, INDIA
To whom it may concern It is to certify that the BTech Part3 Project Work entitled “ Fabrication and Charcterisation of Au-Si-Au MSM structure” has been successfully completed by Mr Soumo Ghosal (Roll 91/RPE 060001 , Regd No. 048674 of 2001-2002) and Ms Shraboni Samaddar ( ) for partial fulfillment of the requirements for the Bachelors Degree in Engineering from the Institute of Radiophysics and Electronics,University of Calcutta, under my guidance following all the rules and regulations laid down by the University and the Institute. This is now ready for evaluation.
Prof J.P. Bandyopadhyay
Acknowledgement It has been a wonderful experience working on my BTech Project under the guidance of my respected teacher Prof J.P. Bandyopadhyay. I am thankful to my guide for the immense support extended by him. He has always been a source for encouragement helping me whenever I have approached him. I am also thankful to my project partner Ms Shraboni Samaddar for being extremely accommodative. Heartfelt thanks to all the people associated with the “IMPATT Fabrication Laboratory” of IRPE. Special thanks to Mr Nabin Mondal for it was he who taught us how to handle the instruments used in my fabrication process. I am grateful to all some of my fellowmates working in the same lab for their assistance. Finally my sincere thanks to all the teachers and staff of the Institute who have always been supportive whenever I needed any help. Date : Soumo Ghosal BTech (2005-2008) Institute of Radiophysics and Electronics University of Calcutta 92,A.P.C Road Kolkata - 700009
Content Introduction …1
…
Objectives and scope of the work
BASIC THEORY …… 5 Chapter 1 Metal Semiconductor Juntion Schottky Diode & Ohmic Contact Structure and principle of operation
…
… 6 Electrostatic Analysis
…
… 10 Schottky diode current
.......
15 Schottky diodes
…
… 17 Ohmic Contacts
…
… 29 Chapter 2 Basic Theory 2.1 Theory of MSM Devices
……
33 2.2 Potential Distribution and electron current
… 34
…
2.3 Small Voltage range
……
34 2.4 Voltage larger than Reach Through Voltage
……
36 2.5 Voltage larger than Flat Band voltage
……
37 2.6 Hole current Transport
……
37 2.7 Theoretical CV characteristics
……
39 Fabrication Procedures …… 41 Chapter 3 Cleaning 3.1 Beaker Cleaning
…
… 42 3.2 Wafer Cleaning
……
42 Chapter 4 Metallization 4.1 Metallization Requirements
……
44 4.2 System requirements for vacuum generation
……
44 4.3 Deposition techniques or sources for vacuum deposition
……
45 4.4 Front- Side Metallization
……
45 4.5 Back Side Metallization
……
48 4.6 Rotary and Diffusion Pumps
50 Chapter 5 Photolithography and Etching
……
5.1 Photolithography
……
52 5.2 Mesa Etching
……
52 Characterization & Sample Analysis …… 54 Chapter 6 Study of Surface morphology 6.1 Theory of SEM
……
55 6.2 Experimental observations of the sample with SEM
……
61 6.3 EDX Analysis
……
67 6.4 Experimental study of sample with EDX
……
68 Chapter 7 Experimentally obtained values for IV and CV Characteristics 7.1 IV Characteristics …… 78 7.2 CV Characteristics …… 80 Conclusion and Future Scope for Work 81
……
Bibliography 82
……
PROJECT REPORT Submitted for partial fulfillment of the requirements for the Degree of Bachelor’s in Technology FROM The Institute of Radiophysics and Electronics,University of Calcutta IN The Academic Year : 2007-2008 Under the guidance of
PROF J.P.Bandyopadhyay By SOUMO GHOSAL University College of Technology INSTITUE OF RADIOPHYSICS AND ELECTRONICS
92,Acharya Prafulla Chandra Road Calcutta-700009, INDIA
UNIVERSITY
OF CALCUTTA
University College of Technology INSTITUE OF RADIOPHYSICS AND ELECTRONICS Telephone : (+91) (33) 350-9115/9116/9413 Road Telegram : INRAPHEL Fax : (+91) (33) 351-5828 e-mail : [email protected]
92,Acharya Prafulla Chandra Calcutta-700009, INDIA
To whom it may concern It is to certify that the BTech Part3 Project Work entitled “ Fabrication and Charcterisation of Au-Si-Au MSM structure” has been successfully completed by Mr Soumo Ghosal (Roll 91/RPE 060001 , Regd No. 048674 of 2001-2002) and Ms Shraboni Samaddar ( ) for partial fulfillment of the requirements for the Bachelors Degree in Engineering from the Institute of Radiophysics and Electronics,University of Calcutta, under my guidance following all the rules and regulations laid down by the University and the Institute. This is now ready for evaluation.
Prof J.P. Bandyopadhyay
Acknowledgement It has been a wonderful experience working on my BTech Project under the guidance of my respected teacher Prof J.P. Bandyopadhyay. I am thankful to my guide for the immense support extended by him. He has always been a source for encouragement helping me whenever I have approached him. I am also thankful to my project partner Ms Shraboni Samaddar for being extremely accommodative. Heartfelt thanks to all the people associated with the “IMPATT Fabrication Laboratory” of IRPE. Special thanks to Mr Nabin Mondal for it was he who taught us how to handle the instruments used in my fabrication process. I am grateful to all some of my fellowmates working in the same lab for their assistance. Finally my sincere thanks to all the teachers and staff of the Institute who have always been supportive whenever I needed any help. Date : Soumo Ghosal BTech (2005-2008) Institute of Radiophysics and Electronics University of Calcutta 92,A.P.C Road Kolkata - 700009
Content Introduction …1
…
Objectives and scope of the work
BASIC THEORY …… 5 Chapter 1 Metal Semiconductor Juntion Schottky Diode & Ohmic Contact Structure and principle of operation
…
… 6 Electrostatic Analysis
…
… 10 Schottky diode current
.......
15 Schottky diodes
…
… 17 Ohmic Contacts
…
… 29 Chapter 2 Basic Theory 2.1 Theory of MSM Devices
……
33 2.2 Potential Distribution and electron current
… 34
…
2.3 Small Voltage range
……
34 2.4 Voltage larger than Reach Through Voltage
……
36 2.5 Voltage larger than Flat Band voltage
……
37 2.6 Hole current Transport
……
37 2.7 Theoretical CV characteristics
……
39 Fabrication Procedures …… 41 Chapter 3 Cleaning 3.1 Beaker Cleaning
…
… 42 3.2 Wafer Cleaning
……
42 Chapter 4 Metallization 4.1 Metallization Requirements
……
44 4.2 System requirements for vacuum generation
……
44 4.3 Deposition techniques or sources for vacuum deposition
……
45 4.4 Front- Side Metallization
……
45 4.5 Back Side Metallization
……
48 4.6 Rotary and Diffusion Pumps
50 Chapter 5 Photolithography and Etching
……
5.1 Photolithography
……
52 5.2 Mesa Etching
……
52 Characterization & Sample Analysis …… 54 Chapter 6 Study of Surface morphology 6.1 Theory of SEM
……
55 6.2 Experimental observations of the sample with SEM
……
61 6.3 EDX Analysis
……
67 6.4 Experimental study of sample with EDX
……
68 Chapter 7 Experimentally obtained values for IV and CV Characteristics 7.1 IV Characteristics …… 78 7.2 CV Characteristics …… 80 Conclusion and Future Scope for Work 81
……
Bibliography 82
……
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