Zno Properties
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remarkable zinc oxide (zno) the enormous potential for use of zno in optoelectronic applications can be explained with reference to the table below which compares key properties of zno with those of competing compound semiconductor materials currently in use. indeed zno has a unique combination of high values for energies of band gap energy, cohesion and exciton stability. the very high exciton binding energy (60mev) gives it a very high potential for room temperature light emission. this also gives zno strong resistance to high temperature electronic degradation during operation (e.g. laser diodes). finally, zno is the hardest of the ii-vi family of semiconductors. this means that it�s performance will not be degraded as easily as the other compounds through the appearance of defects.
selected zno properties
cal/gm
- molecular mass - specific gravity at room temp. - point group (wurtzite) - lattice constants at room temp. - mohs hardness - melting point - rt linear thermal expansion coefficient - a-axis direction - c-axis direction - electron mass - hole mass - bandgap energy at room temp. - exciton binding energy - specific heat
81.389 5.642 g/cm3 6mm
3.37 ev 60 mev 0.125
- thermal conductivity - thermoelectric constant at 573 k
0.006 cal/cm/k 1200 mv/k
a=3.250, c=5.205 4 2250 k 4.75 2.92 0.28 1.8
key advantages of zno - high piezoelectric effect (e33 = 1.2 c/m2, among highest of all semiconductors)
- high thermal conductivity of 0.54 wcm-1k-1 (compared with 0.5 for gaas) - largest exciton binding energy of ii-vi & iii-v semiconductors, 60 mev = excitonic stimulated light emission up to 550 k - even more radiation resistant than gan (up to 2 mev, 1.2 x 1017 electrons/cm-2) - drift mobility saturates at higher fields & higher values than gan = attractive for high frequency devices - very low dark current uv detectors with maximum spectral response at 350nm - strong two-photon absorption with high damage thresholds, = attractive for optical power limiting devices - very large shear modulus ~45.5 gpa (indicates stability of the crystal) = compared with 18.35 for znse, 32.60 for gaas, 51.37 for si. home
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remarkable zinc oxide (zno) the enormous potential for use of zno in optoelectronic applications can be explained with reference to the table below which compares key properties of zno with those of competing compound semiconductor materials currently in use. indeed zno has a unique combination of high values for energies of band gap energy, cohesion and exciton stability. the very high exciton binding energy (60mev) gives it a very high potential for room temperature light emission. this also gives zno strong resistance to high temperature electronic degradation during operation (e.g. laser diodes). finally, zno is the hardest of the ii-vi family of semiconductors. this means that it�s performance will not be degraded as easily as the other compounds through the appearance of defects.
selected zno properties
cal/gm
- molecular mass - specific gravity at room temp. - point group (wurtzite) - lattice constants at room temp. - mohs hardness - melting point - rt linear thermal expansion coefficient - a-axis direction - c-axis direction - electron mass - hole mass - bandgap energy at room temp. - exciton binding energy - specific heat
81.389 5.642 g/cm3 6mm
3.37 ev 60 mev 0.125
- thermal conductivity - thermoelectric constant at 573 k
0.006 cal/cm/k 1200 mv/k
a=3.250, c=5.205 4 2250 k 4.75 2.92 0.28 1.8
key advantages of zno - high piezoelectric effect (e33 = 1.2 c/m2, among highest of all semiconductors)
- high thermal conductivity of 0.54 wcm-1k-1 (compared with 0.5 for gaas) - largest exciton binding energy of ii-vi & iii-v semiconductors, 60 mev = excitonic stimulated light emission up to 550 k - even more radiation resistant than gan (up to 2 mev, 1.2 x 1017 electrons/cm-2) - drift mobility saturates at higher fields & higher values than gan = attractive for high frequency devices - very low dark current uv detectors with maximum spectral response at 350nm - strong two-photon absorption with high damage thresholds, = attractive for optical power limiting devices - very large shear modulus ~45.5 gpa (indicates stability of the crystal) = compared with 18.35 for znse, 32.60 for gaas, 51.37 for si. home
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