OPTICAL DRIVERS AND DETECTORS IDC
Light sources ●
Characteristics required » Effective coupling to fibres down to 8.5 microns diameter » Easily modulated with linear characteristics » High output power » High reliability » Small size and weight » Low cost
IDC
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Light emitting diodes (LEDs) » Made from p- and n-type semiconductor substrates » Most common materials – Gallium aluminium arsenide (GaAlAs) for 800 to 900 nm wavelengths – Gallium arsenide (GaAs) for 930 nm – Gallium arsenide phosphorous (GaAsP) for 660 nm (red for plastic fibres) – Indium gallium arsenide phosphide (InGaAsP) for 1300 and 1550 nm
IDC
» P - type substrate – More protons than electrons - holes – Apply +ve voltage
» N - type substrate – More electrons than protons – Apply -ve voltage
» Electrons and holes flow toward the junction and combine, emitting photons » Forbidden bandgap determines the energy of the emitted photon IDC
Basic LED operation
Light Emission
+
+ -
+
-+
Bias Voltage
p - region
-+ -
Junction
n - region
Recombination
IDC
Energy (eV)
Bandgap determines photon energy emission
IDC
-
Conduction Band (Free Electrons)
hf
Bandgap (w)
+
-
Valence Band + (Bound Electrons - Free Holes)
Amount of Energy released when electron drops to valence band and recombination occurs
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LED geometry » Standard LEDs emit light in all directions » Fibre LEDs must emit light in a narrower confined beam » Types – Burrus ●
A hole is etched into the substrate for fibre
– Edge emitting diodes ●
IDC
Uses a very thin active region to confine the light
Edge emitting LED 300 µm
Metal
Light Emission
P - Region 50 µm
Active Layer n - Region (substrate) SiO2 Insulating Layer Metal 100
IDC
µm
Metal Stripe Confines Charge Carriers Laterally
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Operating characteristics » Output power – 1 mW max. Down to several µW
» Power consumption – 20 to 100 mA, 1.2 to 1.8 V, up to 180 mW
» Spectral widths – 3 dB optical power bandwidth – 40 nm at 850 nm, 80 nm at 1300 nm – Increased spectral width causes increased dispersion
» Operating lifetime IDC
– When output power has dropped by 3 dB – ~ 11 years » Cont.
DIODE AND LASER CHARACTERISTICS
IDC
» Modulation – Mostly digital - (LED turned on and off) – Analogue possible (requires forward DC bias)
» Temperature effects – Operating range -65 to 125 degrees C – Output power decreases with temperature 0.012 dB / °C
IDC
Practical LED packages Fibre a)
LENS coupling (for large fibres ~1000 microns)
b)
Microlensed LED (50 micron fibres)
LENS LED
Metal Cap
TO18 Header
Fibre Transparent Window Microlens LED
Metal Cap
IDC
TO18 Header
Diode Packaging
IDC
Integrated Connectors
IDC
ANALOG AND DIGITAL DIODE CONTROLS
IDC
Laser diodes Laser “light amplification by stimulated emission of radiation” ● Operate on similar principles to edge LEDs. ● A resonant optical cavity ●
» Reflective ends » Dc biased » Photons strike electrons and stimulate further photon emission » Light amplified and escapes as laser beam IDC
Laser diode operation
IDC
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Operating characteristics » Output power – 1mW to several hundred mW
» Power consumption – 30 to 250 mA, 1.2 to 2 V, 30 to 500 mW
» Spectral width – 1 nm at 850nm, 3 nm at 1300nm
» Lifetimes – 11 years at 22 degrees C – 1 year at 70 degrees C IDC
» Modulation – Mostly digital ●
Switched on/off close to threshold
– Analogue possible ●
Above threshold current
» Temperature effects – Threshold current increases with temperature 1.5 % per degree C – Output power decreases as temperature increases
IDC
Laser diode power - current temperature curves
IDC
VCSEL Vertical Cavity Surface Emitting Laser ● Cheap laser diode ● Less energy required for laser operation ● Emits narrow, more circular beam ● Operate at 850 and 1300 nm ● Speeds up to 10 Gbps ●
IDC
VCSEL Chip
IDC
ANALOG AND DIGITAL LASER CONTROL CIRCUITS
IDC
Laser diode package Insulation Contact Wire Laser Diode Circuit Connection
Fibre Pigtail
Grooved Block IDC
Threaded Ground Terminal
Cap
Laser diode transmitter module Photodetector
Diode Terminal
Laser Diode
Grooved Block
Fibre IDC
Laser Module
IDC
Laser safety ! All laser devices should be considered hazardous to the human eye. Under no circumstances look directly into the laser path! ● The 1300 and 1550 nm wavelengths are invisible to the human eye but will burn the retina. ●
IDC
Optical detectors ●
Converts photon light energy to electrical energy
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Must be very low inherent noise device
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Provide amplification of low level
IDC
signals
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Pin photodiodes » Use reverse process of the LED » Common response times of 0.5 to 10 ns (2 GHz to 100 MHz). » Special devices down to 10 ps (100 GHz)
IDC
Pin photodiode Photon
-
-
+
+
I V
IDC
P+
π Intrinsic Region
n+
RL
VOUT
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Avalanche photodiodes » High reverse bias voltages cause an increasing avalanche of charges in the semiconductor areas. » Advantages – Increased sensitivity to incoming light – Internal amplification – Twice the response time for standard devices
» Disadvantages – More complex – Increase costs – Less reliable IDC
» Used for low signal to noise requirements and long distance telecommunications.
Avalanche photodiodes
IDC
IDC
APD Receiver
IDC
Amplifiers » Required because the very low levels of light produce tiny currents in the detectors – A light signal of 1 µW will produce 600 nA in a pin diode – need to amplify..
» Can be FET – Greater sensitivity at lower data rates & lowest noise
» Or bipolar – For high data rates
IDC
Optical amplifiers » Amplification without conversion to electrical energy » Use stimulated emission principle for single photon pass » Doped fibres – Erbium for 1550 nm – Praseodymium for 1300 nm
» Semiconductor lasers
IDC
– Problems matching wide diameter fibre cores to small laser areas – Active layer narrow - 9 µm to 1 µm
Doped Fibre Amplifier Pump laser 980nm Erbium doped fibre Raises energy of Erbium atoms
Incident Light 1540nm IDC
Stimulates Emission at 1540nm
Amplified Output 1540nm
IDC
EDFA
IDC
Semiconductor Laser Amplifier Semiconductor Laser Amplifier Core
Core
INPUT FIBRE
OUTPUT FIBRE Incident light beam
Output light beam Active Layer
IDC