Thyristor Bt169ew

Philips Semiconductors

Product specification

Thyristor logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

PINNING - SOT223 PIN

QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM

PARAMETER

cathode

2

anode

3

gate anode

MAX. MAX. MAX. MAX. UNIT

BT169 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current

PIN CONFIGURATION

DESCRIPTION

1

tab

BT169W Series

BW 200

DW 400

EW 500

GW 600

V

0.5

0.5

0.5

0.5

A

0.8 8

0.8 8

0.8 8

0.8 8

A A

SYMBOL

4

a

2

1

k

g

3

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL

PARAMETER

CONDITIONS

MIN.

VDRM, VRRM Repetitive peak off-state voltages IT(AV)

Average on-state current

IT(RMS) ITSM

RMS on-state current Non-repetitive peak on-state current

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

half sine wave; Tsp ≤ 112 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

MAX. B 2001

D 4001

E 5001

UNIT G 6001

V

-

0.63

A

-

1

A

-

8 9 0.32 50

A A A2s A/µs

-40 -

1 5 5 2 0.1 150 125

A V V W W ˚C ˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997

1

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

BT169W Series

THERMAL RESISTANCES SYMBOL

PARAMETER

Rth j-sp

Thermal resistance junction to solder point Thermal resistance junction to ambient

Rth j-a

CONDITIONS

pcb mounted, minimum footprint pcb mounted; pad area as in fig:14

MIN.

TYP.

MAX.

UNIT

-

-

15

K/W

-

156 70

-

K/W K/W

MIN.

TYP.

MAX.

UNIT

0.2

50 2 2 1.35 0.5 0.3

200 6 5 1.5 0.8 -

µA mA mA V V V

-

0.05

0.1

mA

MIN.

TYP.

MAX.

UNIT

-

25

-

V/µs

-

2

-

µs

-

100

-

µs

STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL

PARAMETER

CONDITIONS

IGT IL IH VT VGT

Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage

ID, IR

Off-state leakage current

VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ IT = 2 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; RGK = 1 kΩ

DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL

PARAMETER

CONDITIONS

dVD/dt

Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time

VDM =67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1k Ω ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ

tgt tq

September 1997

2

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

1

BT169W Series

BT169W

Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57

0.8

Tsp(max) / C

1.9

8

116

6

0.4

119

4

0.2

122

2

125 0.7

0

0

2.2

0.1

0.2

0.3 0.4 IF(AV) / A

0.5

0.6

Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).

1000

1

10 100 Number of half cycles at 50Hz

1000

Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

BT169

ITSM / A

I TSM

time T Tj initial = 25 C max

2.8 4

0

BT169 IT

113

0.6

ITSM / A

10

110

a = 1.57

2

IT(RMS) / A

BT134W

1.5

100

1

10

I TSM

IT

0.5

time

T

Tj initial = 25 C max 1 10us

100us

0 0.01

10ms

1ms T/s

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.

1.2

1.6

10

VGT(Tj) VGT(25 C)

BT151

1.4

0.8

1.2

0.6

1

0.4

0.8

0.2

0.6 0

50 Tsp / C

100

0.4 -50

150

Fig.3. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp.

September 1997

1

112 C

1

0 -50

surge duration / s

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 112˚C.

BT134W

IT(RMS) / A

0.1

0

50 Tj / C

100

150

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

3

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

3

BT169W Series

IGT(Tj) IGT(25 C)

5

BT169

BT169W

IT / A Tj = 125 C Tj = 25 C

2.5

4

2

3

Vo = 1.0 V Rs = 0.27 Ohms

1.5

typ

2

max

1 1

0.5 0 -50

0

50 Tj / C

100

0

150

IL(Tj) IL(25 C)

0.5

1

1.5

2

2.5

VT / V

Fig.10. Typical and maximum on-state characteristic.

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

3

0

100

BT169

2.5

BT169W

Zth j-sp (K/W)

10

2 1

1.5

P D

1

tp

0.1

0.5

t

0 -50

0

50 Tj / C

100

0.01 10us

150

IH(Tj) IH(25 C)

1ms

10ms

0.1s

1s

10s

tp / s

Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj, RGK = 1 kΩ.

3

0.1ms

1000

BT169

dVD/dt (V/us)

2.5 100

RGK = 1 kohms

2 1.5 10

1 0.5 0 -50

0

50 Tj / C

100

1

150

50

100

150

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj, RGK = 1 kΩ.

September 1997

0

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

4

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

BT169W Series

MOUNTING INSTRUCTIONS Dimensions in mm. 3.8 min

1.5 min

2.3 1.5 min

6.3

(3x)

1.5 min

4.6

Fig.13. soldering pattern for surface mounting SOT223.

PRINTED CIRCUIT BOARD Dimensions in mm. 36

18

60 4.5

4.6

9

10

7 15 50

Fig.14. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).

September 1997

5

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

BT169W Series

MECHANICAL DATA Dimensions in mm

6.7 6.3

Net Mass: 0.11 g

B

3.1 2.9

0.32 0.24

0.2

4

A

A

0.10 0.02

16 max

M

7.3 6.7

3.7 3.3 13

2

1 10 max 1.8 max

1.05

0.80

2.3

0.60

0.85 4.6

3 0.1 M

B

(4x)

Fig.15. SOT223 surface mounting package. Notes 1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 750 00505. 2. Epoxy meets UL94 V0 at 1/8".

September 1997

6

Rev 1.200

Philips Semiconductors

Product specification

Thyristor logic level

BT169W Series

DEFINITIONS Data sheet status Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification

This data sheet contains final product specifications.

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1997

7

Rev 1.200

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