Philips Semiconductors

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCESM VCBO VCEO IC ICM Ptot VCEsat ICsat tf

Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time

VBE = 0 V

3.5 145

1000 1000 450 5 10 32 1.5 160

V V V A A W V A ns

PINNING - SOT186A PIN

Ths ≤ 25 ˚C ICsat=2.5A,IB1=0.5A,IB2=0.8A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

c

case

1

base

2

collector

3

emitter

b

case isolated

e

1 2 3

LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL

PARAMETER

CONDITIONS

VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj

Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature

VBE = 0 V

Ths ≤ 25 ˚C

MIN.

MAX.

UNIT

-65 -

1000 450 1000 5 10 2 4 32 150 150

V V V A A A A W ˚C ˚C

TYP.

MAX.

UNIT

-

3.95

K/W

55

-

K/W

THERMAL RESISTANCES SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

September 1998

1

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

Visol

R.M.S. isolation voltage from all three terminals to external heatsink

f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

MIN.

TYP.

-

MAX.

UNIT

2500

V

-

10

-

pF

MIN.

TYP.

MAX.

UNIT

-

-

1.0 2.0

mA mA

450

-

10 -

mA V

10 14

0.25 22 25

1.5 1.3 35 35

V V

STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE

PARAMETER Collector cut-off current

CONDITIONS 1

VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A Base-emitter saturation voltage IC = 2.5 A; IB = 0.33 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V

hFEsat

IC = 2.5 A; VCE = 5 V

10

13.5

17

hFEsat

IC = 3.5 A; VCE = 5 V

8

10

12

TYP.

MAX.

UNIT

0.5 3.3 0.33

0.7 4 0.45

µs µs µs

1.4 145

1.6 160

µs ns

1.7 160

1.9 200

µs ns

DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL

ton ts tf

PARAMETER

CONDITIONS

Switching times (resistive load)

ICsat = 2.5 A; IB1 = -IB2 = 0.5 A; RL = 75 ohms; VBB2 = 4 V;

Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load)

ts tf

Turn-off storage time Turn-off fall time Switching times (inductive load)

ts tf

Turn-off storage time Turn-off fall time

ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH; -VBB = 5 V ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C

1 Measured with half sine-wave voltage (curve tracer).

September 1998

2

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ICsat

90 %

+ 50v 100-200R

90 %

IC 10 % ts

Horizontal

ton

tf

toff

Oscilloscope

IB1

IB

Vertical

10 %

300R

1R

tr

30ns

6V

30-60 Hz

-IB2

Fig.4. Switching times waveforms with resistive load.

Fig.1. Test circuit for VCEOsust.

IC / mA

VCC

LC

250 200

IB1

LB

100

T.U.T. -VBB

0

min

VCE / V

VCEOsust

Fig.2. Oscilloscope display for VCEOsust.

Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

VCC

ICsat 90 % IC

RL VIM

RB

0

10 %

T.U.T.

ts toff

tp IB

tf

t

IB1

T

t -IB2

Fig.6. Switching times waveforms with inductive load.

Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.

September 1998

3

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ICon 90 %

VCEsat/V

2.0

IC

1.6 IC=1A

3A

2A

4A

1.2

10 % tf

ts toff

t

0.8

IBon

IB

0.4

t 0.0 0.01

-IBoff

Fig.7. Switching times waveforms with inductive load.

120 110

IB/A

1.00

10.00

Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.

Normalised Derating

%

0.10

VBEsat/V

with heatsink compound 1.4

100 90

1.2

80 70

1.0

60

0.8

P tot

50 40

0.6

30

0.4

20 10

0.2

0 0

20

40

60

80 Ths / C

100

120

0.0

140

0.1

Fig.8. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths)

1.0 IC/A

10.0

Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.

h FE

VCEsat/V

100 0.5

5V

0.4

0.3

10

0.2

Tj = 25 C

1 0.01

1V

0.1

0.0

0.1

1

10

0

IC / A

Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE

September 1998

1 IC/A

10

Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.

4

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

10

Zth / (K/W)

BUT11APX

BU1706AX

VCC

0.5 1

0.1

0.2 0.1 0.05

LC

0.02 tp

PD

D=

tp

IBon

T

VCL LB

0.01 D=0 0.001

1u

t

T 10u 100u 1m 10m 100m t/s

1

10

-VBB

T.U.T.

100

Fig.15. Test circuit RBSOA. Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc = 200µH

Fig.13. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

IC/V 11

10

9

8

7

6

5

4

3

2

1

0 0

200

400

600

800

1,000

1,200

VCE CLAMP/V

Fig.14. Reverse bias safe operating area. Tj ≤ Tj max

September 1998

5

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

100

BUT11APX

IC / A

= 0.01

ICM max 10 IC max

tp = 10 us

II 100 us

(1)

1 1 ms 10 ms

I

0.1

(2) 500 ms DC

III

0.01 1

10

1000

100 VCE / V

Fig.16. Forward bias safe operating area. Ths ≤ 25 ˚C (1) (2) I II III NB:

Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope.

September 1998

6

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

MECHANICAL DATA Dimensions in mm Net Mass: 2 g

10.3 max

4.6 max

3.2 3.0

2.9 max

2.8

Recesses (2x) 2.5 0.8 max. depth

6.4 15.8 19 max. max.

15.8 max

seating plane

3 max. not tinned 3 2.5 13.5 min. 1 0.4

2

3

M

1.0 (2x) 0.6 2.54

0.9 0.7

0.5 2.5

5.08

1.3

Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

September 1998

7

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

DEFINITIONS Data sheet status Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification

This data sheet contains final product specifications.

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1998

8

Rev 1.000

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