Liste Des Travaux

LISTE DES TRAVAUX Publications dans des revues internationales à comité de lecture : [1]

Optical investigation in ultrathin InAs/InP quantum wells grown by hybride vapour phase epitaxy. H. Banvillet, E. Gil, R. Cadoret, P. Disseix, K. Ferdjani, A.M. Vasson, A. Vasson, A. Tabata, T. Benyattou and G. Guillot, J. Appl. Phys. 70, 1638 (1991).

[2] First investigation on an ultrathin InAs/InP single quantum well by thermally-detected optical absorption spectroscopy. A.M. Vasson, A. Vasson, J. Leymarie, P. Disseix, P. Boring and B. Gil, Semicond. Sci. Technol. 8, 303 (1993). [3] Photoluminescence studies in strained InAs/InP quantum wells grown by hybride vapour phase epitaxy. P. Disseix, J. Leymarie, A. Vasson, A.M. Vasson, H. Banvillet, E. Gil, N. Piffault and R. Cadoret, Semicond. Sci. Technol. 8, 1666 (1993). [4] Optical study of segregation effects on the electronic properties of MBE-grown (In,Ga)As/GaAs quantum wells. P. Disseix, J. Leymarie, A. Vasson, A.M. Vasson, C. Monier, N. Grandjean, M. Leroux and J. Massies, Phys. Rev. B55, 2406 (1997). [5] Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells. P. Ballet, P. Disseix, J. Leymarie, A Vasson, A-M. Vasson and R. Grey, Phys. Rev. B 56 15202 (1997). [6] Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells. P. Ballet, P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, and R. Grey, Phys. Rev. B 59, R5308 (1999). [7] On the determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers. P. Ballet, P.Disseix, J. Leymarie, A. Vasson, A.M. Vasson and R. Grey., Thin Solid Films 336, 354 (1999). [8] Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells. P. Ballet, P. Disseix, J. Leymarie, A Vasson, A-M. Vasson and R. Grey, Phys. Rev. B 59, R5308 (1999). [9] Optical properties of (In,Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates. P. Disseix, P. Ballet, C. Monier, J. Leymarie, A Vasson, A-M. Vasson, Microelectronics Journal 30, 689 (1999). [10] Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exiton resonance region. G. Malpuech, A. Kavokin, J. Leymarie, P. Disseix, A. Vasson, Phys. Rev. B 60, 13298 (1999). [11] Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gaz source molecular beam epitaxy. P. Disseix, C. Payen, J. Leymarie, A. Vasson and F. Mollot, J. Appl. Phys. 88, 4612 (2000). [12] Modelisation of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux and J. Massies, Solid State Comm 115, 575 (2000).

[13] Thermally detected optical absorption, reflectance and photo-reflectance studies of InAsP/InP quantum wells grown by gas source molecular beam epitaxy. P. Disseix, C. Payen, J. Leymarie, A. Vasson and F. Mollot, Optical Materials 17, 197 (2001). [14] Refractive indexes of AlN, GaN and AlxGa1-xN grown on (111)Si substrates determined by a coupled procedure combining ellipsometry and reflectivity. N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie , P. Disseix, D. Byrne, F. Semond and J. Massies, J. Appl. Phys. 93, 5222 (2003). [15] Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities. N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond and J. Massies, Phys. Stat. Sol (a) 195, 543 (2003). [16] Observation of Rabi splitting in a bulk GaN microcavity grown on silicon. N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond and J.Massies , Phys. Rev. B 68, 153313 (2003). [17] Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon, F. Semond, I. R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix, and A. Vasson, Appl. Phys. Lett. 87, 21102 (2005). [18] Spectroscopy of a Bulk GaN Microcavity Grown on Si(111). N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond and J. Massies , Jpn. J. Appl. Phys. 44, 4902 (2005). [19] "Strong coupling of light with A and B excitons in GaN microcavities grown on silicon" I. R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie, and A. Vasson, Phys. Rev. B 73, 033304 (2006). [20] “Low dislocation density high quality thick HVPE GaN layers” Y. Andre, A. Trassoudaine, J. Tourret, R. Cadoret, E. Gil, D. Castelluci, O. Aoude, P. Disseix, J.Crystal Growth 306, 86 (2007). [21] “Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations”. T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J. Y. Duboz, J. Appl. Phys. 101, 73510(2007). [22] "Continuous-wave and ultrafast-coherent-reflectivity studies of excitons in bulk GaN." O. Aoude, P. Disseix, J. Leymarie, A. Vasson, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. Andre, Phys. Rev. B 77, 045206 (2008). [23] "Influence of the mirrors on the strong coupling regime in planar GaN microcavities." F. Reveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, and J. Massies, Phys. Rev. B 77, 195303 (2008). [24] "Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption." F. Médard, J. Zuniga-Perez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J.C. Moreno, M. Leroux, S. Faure, and T. Guillet, Phys. Rev. B 79, 125302 (2009). [25] “Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature” S. Faure, C. Brimont, T. Guillet, T. Bretagnon, B. Gil1, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zuñiga-Perez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, S. Bouchoule, Appl. Phys. Lett. 95, 121102 (2009).

Communications à des congrès avec comité de lecture et donnant lieu à des publications dans des revues ou des proceedings: [26] Oscillator strength of excitons deduced from reflectance measurements in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular beam epitaxy. C. Monier, P. Disseix, J. Leymarie, A. Vasson, A.M. Vasson, B. Courboules, C. Deparis, M. Leroux and J. Massies, Proc. of the International Conference on Semiconductor Heteroepitaxy, ICSH’95, Montpellier (France), 4-7 Juillet 1995, “Semiconductor Heteroepitaxy” ed. by B. Gil and R. L. Aulombard, Word Scientific Singapore, 511 (1995). [27] Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties. J. Leymarie, P. Disseix, M. Rezki, A. Vasson and A.M. Vasson, Third International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies EXMATEC’96, Freiburg (Allemagne), 12-15 mai 1996 Materials Science and Engineering B44, 147 (1997). [28] Segregation effects on the optical properties of (In,Ga)As/GaAs quantum wells grown by molecular beam epitaxy under various conditions. P. Disseix, J. Leymarie, A. Vasson, A.M. Vasson, C. Monier, N. Grandjean, M. Leroux and J. Massies, Third International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies EXMATEC’96, Freiburg (Allemagne), 12-15 mai 1996 Materials Science and Engineering B44, 151 (1997). [29] Optical investigation of piezoelectric field effects on excitonic properties in (111)B-grown (In,Ga)As/GaAs quantum wells. P. Ballet, P.Disseix, A. Vasson, A.M. Vasson and R. Grey. International Workshop on Growth, characterization and exploitation of epitaxial compound semiconductors on nevel index surfaces (NIS’96), Lyon (France), 7-9 oct. 1996. Microelectronics Journal 28, 735 (1997). [30] Effect of indium sedgregation on excitonic properties in (111)B-grown (In,Ga)As/GaAs multiple quantum wells. P. Ballet, P.Disseix, J. Leymarie, A. Vasson, A.M. Vasson and R. Grey, 2nd International Conference on Low Dimensional Structures and Devices, Lisbonne (Portugal), 19-21 mai 1998, Microelectronic Engineering 43-44, 205 (1998). [31] Experimental and theoretical study of the growth of GaN on sapphire by HVPE. A. Trassoudaine, E. Aujol, P. Disseix, D. Castelluci and R. Cadoret, Third International Conference on Nitride Semiconductors (ICNS’99), Montpellier (France), 5-9 juillet 1999, Phys. Stat. Sol. (a), 176, 425 (1999). [32] Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE. L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic , N. Grandjean, M. Leroux and J. Massies, Spring Meeting of the European-Material-Research-Society, Strasbourg (France), 29 mai2 juin 2000, Materials Science and Engineering B 82, 71 (2001). [33] Growth by Molecular Beam Epitaxy and optical properties of a ten-period AlGaN/AlN distributed bragg reflector on Si(111). F. Semond, N. Antoine-Vincent, N. Schnell, P. Disseix, M. Leroux, J. Massies, J. Leymarie and A. Vasson, International Workshop on the Physics of Light-Matter Coupling in Nitrides, Saint-Nectaire (France), 8-12 octobre 2000, Phys. Stat. Sol (a) 183, 163 (2001). [34] Absorption and emission of InGaN/GaN quantum wells grown by molecular beam epitaxy.

L. Siozade, P. Disseix and A. Vasson, International Workshop on the Physics of Light-Matter Coupling in Nitrides, Saint-Nectaire, 8-12 octobre 2000, Phys. Stat. Sol (a) 183, 139 (2001). [35] Modelling and Spectroscopy of GaN Microcavities, N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, M. Leroux and J. Massies, International Workshop on the Physics of Light-Matter Coupling in Nitrides, Rome, 26-29 septembre 2001, Phys. Stat. Sol (a) 190, 187 (2002). [36] Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells, J. Kietkova, P. Disseix, L. Siozade, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean and J. Massies, International Workshop on the Physics of Light-Matter Coupling in Nitrides, Rome, 26-29 septembre 2001, Phys. Stat. Sol (a) 190, 135 (2002). [37] Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room temperature. MRS Boston 2003. F. Semond, D. Byrne, F. Natali. M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P.Disseix and J. Leymarie. MRS Boston, 1-5 décembre 2003, MRS Proc.798, Y6.5.1 (2004). [38] TDOA and PL studies of InGaAsN /GaAs quantum wells, T. Bouragba, M. Mihailovic, H. Carrère, P. Disseix, A. Vasson, J. Leymarie, E. Bedel, A.Arnoult et C. Fontaine. Spring Meeting of the European-Material-Research-Society, Strasbourg (France), 24-28 mai 2004, IEEE Proc.Optoelectron. 151, 309 (2004). [39] Femtosecond time-resolved interferences of resonantly excited excitons in GaN. O.Aoudé, P.Disseix, J.Leymarie, A.Vasson, E.Aujol, B. Beaumont. Spring Meeting of the European-Material-Research-Society, Strasbourg (France), 24-28 mai 2004, Superlattices and Microstructures 36, 607 (2004). [40] Potentialities of GaN-based microcavities in strong coupling regime at room temperature. N. Ollier, F.Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond and J. Massies. Spring Meeting of the European-Material-Research-Society, Strasbourg (France), 24-28 mai 2004, Superlattices and Microstructures 36, 599 (2004). [41] Strong light- matter coupling regime at room temperature in GaN microcavities with epitaxial AlN/(Al,Ga)N Bragg mirrors grown on silicon. I. R. Sellers, F .Semond, M. Leroux, J. Massies., A.L. Henneghien, P.Disseix, A.Vasson J.Leymarie. MRS Boston, déc. 2005, MRS Proceedings 892, FF20-04. [42] "Room temperature Strong coupling in low finesse GaN microcavities." I. R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, G. Malpuech, A. L. Henneghien, J. Leymarie, and A. Vasson, Materials research society symposium proceedings, GaN, AlN, InN and Related Materials 892, 485 (2006). [43] "Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature." I. R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie, and A. Vasson, Phys. Stat. Sol. (b) 243, 1639 (2006). [44] "Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain." O. Aoude, P. Disseix, J. Leymarie, A. Vasson, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. Andre, Superlattices Microstruct. 40, 166 (2006).

[45] From evidence of strong light-matter coupling to polariton emission in GaN microcavities. I.R. Sellers, F. Semond, F. Stokker-Cheregi, P. Disseix, M. Leroux, J. Leymarie, M. Gurioli, A. Vinattieri, F. Reveret, G. Malpuech, A. Vasson, and J. Massies, Phys. Stat. Sol. (b) 244, 1882 (2007). [46] "Strong Light-Matter Coupling in GaN-Based Microcavities Grown on Silicon Substrates." F. Semond, I.R. Sellers, N. Ollier, F. Natali, D. Byrne, F. Reveret, F. Stokker-Cheregi, K. Bejtka, M. Gurioli, A. Vinattieri, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, and J. Massies, Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates 1068, 95 (2008).

[47] Optical and excitonic properties of ZnO films. M. Mihailovic, A.L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D.A. Buell, F. Semond, C. Morhain, and J. Zùniga Perez, Opt. Mater. 31, 532 (2009). [48] “Optical investigations of bulk and multi-quantum well nitride-based microcavities.” F. Reveret, F. Medard, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, I.R. Sellers, F. Semond, M. Leroux, and J. Massies, Opt. Mater. 31, 505 (2009). [49] "Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities." F. Médard, J. Zúñiga-Perez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux, Photonics Nanostruct. 7, 26 (2009). [50] “Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells.” G.Rakotonanahary , S.Aberra Guebrou, D. Lagarde, F. Natali, F. Reveret, P. Disseix, J. Leymarie, M. Leroux and J. Massies, E-MRS, Strasbourg (France), 8-12 juin 2009, accepted in Phys. Stat. Sol. (C) (2009). Congrès scientifiques ou GDR sans actes : [51] Etude par photoluminescence de puits quantiques contraints InP/InAs/InP obtenus par épitaxie en phase vapeur par la méthode aux hydrures. H. Banvillet, E. Gil, P. Disseix, K. Ferdjani, A. Vasson, A.M. Vasson, A. Tabata et T. Benyatou. Journées de la Matière Condensée, Montpellier, 4-6 septembre 1990. [52] Etude par photoluminescence et spectroscopie d'absorption optique détectée thermiquement d'un puits quantique contraint InAs/InP ultramince. P. Disseix, J. Leymarie, A. Vasson, A.M. Vasson, B Gil et P. Boring. Troisièmes Journées de la Matière Condensée, Lille, 2-4 septembre 92. [53] Etude optique de puits quantiques contraints InAs/InP. P. Disseix , J. Leymarie, A. Vasson, A.M. Vasson, P. Boring et B. Gil. Quatrièmes Journées microélectronique et optoélectronique III-V, La Grande Motte, 21-24 octobre 92. [54] Etude des propriétés électroniques de puits quantiques fortement contraints InAs/GaAs par photoluminescence, réflectivité et absorption optique détectée thermiquement. P. Disseix, J. Leymarie, A.M. Vasson, A. Vasson, N. Grandjean et J. Massies. Cinquièmes Journées microélectronique et optoélectronique III-V, Lyon, 22-24 juin 94. [55] Influence de la ségrégation d’indium sur la détermination du champ piézoélectrique dans des hétérostructures contraintes InGaAs/GaAs (111)B.

P. Ballet, P. Disseix, A. Vasson, A-M. Vasson et R. Grey. Sixièmes Journées microélectronique et optoélectronique III-V, Chantilly, 29-31 Janvier 1997. [56] Spectroscopie de couches de GaN et d’InGaN par absorption optique détectée thermiquement et réflectivité. L. Siozade, P. Disseix, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux and J. Massies, B. Beaumont et P. Gibart. Journées thématiques “Nitrures” du GDR “Semiconducteurs à large bande interdite”, Villeneuve d’Ascq, mai 1998. [56] Optical investigations in (In,Ga)N and GaN layers. L. Siozade, P. Disseix, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux and J. Massies. Sixièmes Journées de la Matière Condensée, 17th General Conference of the Condensed Matter Division, JMC6-CMD17, Grenoble, 25-29 Aout 1998. [57] Modélisation et caractérisation de microcavités à base de GaN. N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux and J. Massies. Journées thématiques “Nitrures” du GDR “Semiconducteurs à large bande interdite”, Grenoble 21-23 mai 2001. [58] Microcavités à base de III-V nitrures pour l'étude du couplage lumière-matière. F. Natali, D. Byrne, F. Semond, N. Antoine-Vincent, J. Massies, N. Grandjean, J. Leymarie et P. Disseix. Neuvièmes Journées Nationales de Microélectronique et Optoélectronique (JNMO 2002), St-Aygulf ,29/09-2/10 2002. [59] Indice de réfraction d'AlN de GaN et AlxGa1-xN à température ambiante et basse température pour l'optimisation de microcavités. N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond et J. Massise. Neuvièmes Journées Nationales de Microélectronique et Optoélectronique (JNMO 2002), St-Aygulf ,29/09-2/10 2002. [60] Recherche du couplage fort lumière-matière dans les microcavités à base de GaN. N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond and J. Massies. Journées thématiques “Nitrures” du GDR “Semiconducteurs à large bande interdite”, Nice 21-23 mai 2003.

********* [61] Spectroscopie optique d’hétérostructures III-V à base d’indium : Propriétés optiques et électroniques P.Disseix, Rapport d’Habilitation à Diriger des Recherches, Université Blaise Pascal, Clermont-FD II, 12 décembre 2003.

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