Important Tables Of Electronics Engineering
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COMPARISON OF VARIOUS RECTIFIERS PARAMETER HALF WAVE FULL WAVE RECTIFIERS RECTIFIERS Peak inverse voltage Em 2Em Ripple factor 1.21 0.482 Rectification efficiency 40.6% 81.2% Output D.C. voltage Em/π 2Em/π Number of diode 1 2 Load current Em/(Rf+RL) Em/(Rf+RL) R.M.S. value of current Im/2 Im/√2 D.C. current Im/π 2Im/π COMPARRISON BETWEEN DIFFERENT LOGIC FAMILIES
BRIDGE RECTIFIERS Em 0.48 81.2% 2Em/π 4 Em/(2Rf+RL) Im/√2 2Im/π
LOGIC PARAMETER
RTL
DTL
TTL
ECL
p-MOS CMOS
Basic Gate (+ve logic) Fan in Fan out Power dissipated in (mW/ gate) Noise immunity Propagation delay per gate 9mW/ gate) Clock rate in megahertz Number of functions cost
NOR 5 5 12 nominal 12 8 High low
NAND 10 8 8-12 Good 30 12-30 Fairly high low
NAND 8 10 12-22 Very good 12-6 15-60 Very high Medium
OR-NOR 5 25 40-55 Good 4-1 60-400-2 High very high
NAND 8 20 0.2-10 Nominal 300 5 low High(fair)
NOR,NAND 8 750 0.01 static 1 Mhz Very good 70 low high ( good)
FREQUENCY RANGES
Category
Frequency range
Wave Length (meter)
VLF LF MF HF VHF UHF SHF EHF
10-30 Khz 30-300 Khz 300-3000 Khz 3-30 Mhz 30-300 Mhz 300-3000 Mhz 3-30 Ghz 30-300 Ghz 20hz-20 Khz
30000-10000 10000-1000 1000-100 100-10 10-1 1-0.1 0.1-0.01 0.01-0.001
Audio Frequency MICROWAVE TUBES Type
Frequency Range (in MHz)
Magnetron
1000-25000
Gain (in db) 40-80
Multi cavity Klystron Two cavity Klystron Reflex Klystron Traveling Wave Tube
500-14000
30-60
500-14000
30
15000000-15000
Band Width 5-40 8-60 Mhz 1-5
60
Efficiency (%)
Comments
1000
30-60
100-250
40or high
500
40
Cross field device, Applied radial DC and axial magnetic field, it can give pulse and continuous wave Not suitable for low power signal amplification. Good power gain. High noise Can use as amplifier or frequency multiplier
10-500 MW
22.7
10
20-40
KW
1000-25000 3000 and higher
Power Output In
.8 GHz
Signal source for microwave generator In microwave receiver as a local oscillator High band width and low noise.
Common screen phosphors Phosphor number Colour
Persistence
Application
P1 P4 P22 P31 P33
Medium Medium Medium Medium short Very long
Oscilloscopes Monochrome picture tube Colour picture tubes Oscilloscopes Radar
Yellowish green White Green, blue and red Green Orange
ELEMENTS AND THEIR USES IN ELECTONICS Element Symble Atomic number Valence electron Aluminium Al 13 3 Boron B 5 3 Gallium Ga 31 3 Indium In 49 3 Germanium Ge 32 4 Silicon Si 14 4 Antimony Sb 51 5 Arsenic As 53 5 Phosphorus P 15 5 Emitter junction Forward Biased Forward Biased Reverse Biased Reverse Biased
Collector junction Reverse Biased Forward Biased Reverse Biased Forward Biased
Application ACCEPTOR IMPURITY ACCEPTOR IMPURITY ACCEPTOR IMPURITY ACCEPTOR IMPURITY SEMICONDUCTER SEMICONDUCTER DONER IMPURITY DONER IMPURITY DONER IMPURITY
Region Of Operation Active Saturation Cut-off Inverted
COMPARRISON BETWEEN TRANSISTOR, JFET, MOSFET FUNCTION TRANSISTOR JFET
MOSFET
Principle Of Operation
Current Controlled Device
Voltage Controlled Device. The conduction of channel is controlled by electric field at PN junction(VGS).
Voltage Controlled Device. The conduction of channel in both type of MOSFET is controlled by electric field at the layer of SiO2. By his electric field charge indused in channel, which is depend on the voltage at gate.
Input Impedance
low
High, but low than MOSFET, due to high leakage current.
High due to low leakage current
Noise
high
low
low
Cost
low
high
High
Drain Resistance
-
High than MOSFET
low than JFET
Mode Of Operation
-
JFET can operate in only depletion mode.
MOSFET can operate in depletion and enhance both modes.
Fabrication
Take more space than JFET
Intricate than MOSFET
Easy than JFET
Uses
In Amplifiers
Rarely use In Amplifiers
Mostly use In Amplifiers
TV Picture Format/Colour System Combinations The Main Video Signal Standards Frame/Field rate Aspect Ratio Scan Lines Name TV standard Colour System Subcarrier Freq 29.97/59.94 4:3 525 NTSC EIA NTSC 3.58MHz 29.97/59.94 4:3 525 PAL-M EIA PAL 3.58MHz 29.97/59.94 4:3 525 SECAM-M EIA SECAM ?.??MHz 25/50 4:3 625 PAL CCIR PAL 4.43MHz 25/50 4:3 625 SECAM CCIR SECAM 4.25/4.40MHz 25/50 4:3 or 16:9 625 D-MAC D-MAC D-MAC N/A 25/50 16:9 625 PALplus CCIR PAL 4.43MHz 60/120 16:9 1125 HiVision HiVision MUSE Unknown
BRIDGE RECTIFIERS Em 0.48 81.2% 2Em/π 4 Em/(2Rf+RL) Im/√2 2Im/π
LOGIC PARAMETER
RTL
DTL
TTL
ECL
p-MOS CMOS
Basic Gate (+ve logic) Fan in Fan out Power dissipated in (mW/ gate) Noise immunity Propagation delay per gate 9mW/ gate) Clock rate in megahertz Number of functions cost
NOR 5 5 12 nominal 12 8 High low
NAND 10 8 8-12 Good 30 12-30 Fairly high low
NAND 8 10 12-22 Very good 12-6 15-60 Very high Medium
OR-NOR 5 25 40-55 Good 4-1 60-400-2 High very high
NAND 8 20 0.2-10 Nominal 300 5 low High(fair)
NOR,NAND 8 750 0.01 static 1 Mhz Very good 70 low high ( good)
FREQUENCY RANGES
Category
Frequency range
Wave Length (meter)
VLF LF MF HF VHF UHF SHF EHF
10-30 Khz 30-300 Khz 300-3000 Khz 3-30 Mhz 30-300 Mhz 300-3000 Mhz 3-30 Ghz 30-300 Ghz 20hz-20 Khz
30000-10000 10000-1000 1000-100 100-10 10-1 1-0.1 0.1-0.01 0.01-0.001
Audio Frequency MICROWAVE TUBES Type
Frequency Range (in MHz)
Magnetron
1000-25000
Gain (in db) 40-80
Multi cavity Klystron Two cavity Klystron Reflex Klystron Traveling Wave Tube
500-14000
30-60
500-14000
30
15000000-15000
Band Width 5-40 8-60 Mhz 1-5
60
Efficiency (%)
Comments
1000
30-60
100-250
40or high
500
40
Cross field device, Applied radial DC and axial magnetic field, it can give pulse and continuous wave Not suitable for low power signal amplification. Good power gain. High noise Can use as amplifier or frequency multiplier
10-500 MW
22.7
10
20-40
KW
1000-25000 3000 and higher
Power Output In
.8 GHz
Signal source for microwave generator In microwave receiver as a local oscillator High band width and low noise.
Common screen phosphors Phosphor number Colour
Persistence
Application
P1 P4 P22 P31 P33
Medium Medium Medium Medium short Very long
Oscilloscopes Monochrome picture tube Colour picture tubes Oscilloscopes Radar
Yellowish green White Green, blue and red Green Orange
ELEMENTS AND THEIR USES IN ELECTONICS Element Symble Atomic number Valence electron Aluminium Al 13 3 Boron B 5 3 Gallium Ga 31 3 Indium In 49 3 Germanium Ge 32 4 Silicon Si 14 4 Antimony Sb 51 5 Arsenic As 53 5 Phosphorus P 15 5 Emitter junction Forward Biased Forward Biased Reverse Biased Reverse Biased
Collector junction Reverse Biased Forward Biased Reverse Biased Forward Biased
Application ACCEPTOR IMPURITY ACCEPTOR IMPURITY ACCEPTOR IMPURITY ACCEPTOR IMPURITY SEMICONDUCTER SEMICONDUCTER DONER IMPURITY DONER IMPURITY DONER IMPURITY
Region Of Operation Active Saturation Cut-off Inverted
COMPARRISON BETWEEN TRANSISTOR, JFET, MOSFET FUNCTION TRANSISTOR JFET
MOSFET
Principle Of Operation
Current Controlled Device
Voltage Controlled Device. The conduction of channel is controlled by electric field at PN junction(VGS).
Voltage Controlled Device. The conduction of channel in both type of MOSFET is controlled by electric field at the layer of SiO2. By his electric field charge indused in channel, which is depend on the voltage at gate.
Input Impedance
low
High, but low than MOSFET, due to high leakage current.
High due to low leakage current
Noise
high
low
low
Cost
low
high
High
Drain Resistance
-
High than MOSFET
low than JFET
Mode Of Operation
-
JFET can operate in only depletion mode.
MOSFET can operate in depletion and enhance both modes.
Fabrication
Take more space than JFET
Intricate than MOSFET
Easy than JFET
Uses
In Amplifiers
Rarely use In Amplifiers
Mostly use In Amplifiers
TV Picture Format/Colour System Combinations The Main Video Signal Standards Frame/Field rate Aspect Ratio Scan Lines Name TV standard Colour System Subcarrier Freq 29.97/59.94 4:3 525 NTSC EIA NTSC 3.58MHz 29.97/59.94 4:3 525 PAL-M EIA PAL 3.58MHz 29.97/59.94 4:3 525 SECAM-M EIA SECAM ?.??MHz 25/50 4:3 625 PAL CCIR PAL 4.43MHz 25/50 4:3 625 SECAM CCIR SECAM 4.25/4.40MHz 25/50 4:3 or 16:9 625 D-MAC D-MAC D-MAC N/A 25/50 16:9 625 PALplus CCIR PAL 4.43MHz 60/120 16:9 1125 HiVision HiVision MUSE Unknown
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