Defects In Crys

  • November 2019
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Imperfection /Defects

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Structure -insensitive Properties • • • • •

Elastic constants Melting point Density Specific heat Coefficient of thermal expansion.

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Structure-sensitive Properties • • • • •

Electrical conductivity Semiconductor Properties Yield stress Fracture Strength Creep strength Practically all the mechanical properties are structure-sensitive properties.

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Defects in Crystalline Materials • All real crystals contain imperfections which may be point, line , surface or volume defects. • Which disturb locally the regular arrangement of the atoms. • Their presence can significantly modify the properties of crystalline solids. 10/15/08

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Defect, or imperfection • The term defect, or imperfection, is generally used to describe any deviation from an orderly array of lattice points. • When the deviation from the periodic arrangement of the lattice is localized to the vicinity of only a few atoms it is called a point defect, or point imperfection.

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Lattice Imperfection • However if the defects extends through microscopic region of the crystal, it is called a lattice imperfection. • Lattice imperfections may be divided into Line defects and surface or Planer defects.

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Types of defects

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Point Defects

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Point Defects

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Line Defect • Line defects obtain their name because they propagate as lines or as a two dimensional net in the crystal. The edge and Screw dislocations are the common line defects encountered in materials. • Surface defects arise from the clustering of line defects into plane

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Surface Defect • The stacking fault between two closed -packed regions of the crystal that have alternate stacking sequences are other example of surface defects. • Grain boundaries, a low angle boundaries and Twin boundaries are surface defects.

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Point Defects • All the atoms in a perfect lattice are at specific atomic sites (ignoring thermal vibrations). • In pure metal two types of point defect are possible, I) Intrinsic defects ii) Extrinsic defects. • Intrinsic defects: i) A vacant atomic site or vacancy, ii) an interstitial atom. • Vacancy formed by the removal of an atom from an atomic site . • Interstitial by the introduction of an atom into a nonlattice site at 1/2, 1/2, 0 position. • 10/15/08

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Point Defects

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Vacancy & Interstitial • It is known that vacancies and interstitials can be produced in materials by plastic deformation and high- energy particle irradiation. • The latter process is particularly important in materials in nuclear reactor installations.

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• The interstitial defect occurs in pure metals as a result of bombardment with high-energy nuclear particles ( radiation damage), • It does not occur frequently as a result of thermal activation. • Further more, intrinsic point defects are introduced into crystals simply by virtue of temperature, • For all temperature above 0K there is a thermodynamically stable concentration. 10/15/08

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• The formation energy of interstitial is typically two to four times more than the formation energy of vacancy. • Therefore in metals in thermal equilibrium the concentration of intestinal may be neglected in comparison with that of vacancies

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Extrinsic defects • Extrinsic defects . Impurity atoms in a crystal can be considered as a extrinsic point defect. Impurity atoms can take up two different types of sites. • Substitutional. An atom of the parent lattice lying in a lattice site is replaced by the impurity atom • Interstitial The impurity atom is at a nonlattice site 10/15/08

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Point Defects

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Dislocation • The most important two dimensional, or line, defect is the dislocation. • Dislocations are important for explaining the slip of crystals, • They are also intimately connected with nearly all other mechanical phenomena such as , • yield point, strain hardening /work hardening, creep, fatigue, and brittle fracture. 10/15/08

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• One way of thinking of a dislocation is to consider that it is the region of localized lattice disturbance separating the slipped and un slipped region of a crystal.

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• The two basic types of dislocations : • Edge dislocation , Burger vector is normal to the line of the dislocation • Two types Positive edge dislocation and negative edge dislocation. • Screw dislocation, burger vector is parallel to the line of dislocation. • Two types , Right hand screw and left hand screw dislocation. 10/15/08

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• Two important rules. • I) The burger vector of edge dislocation is normal to the line of the dislocation . • II) The burger vector of screw dislocation is parallel to the line of the dislocation . • All crystals, apart from some whiskers, contain dislocations and in well annealed crystals the dislocation are arranged in a rather ill- defined net work, the frank net. 10/15/08

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Dislocation Density • The dislocation density is defined as the total length of dislocation line per unit volume of crystal, normally quoted in units of mm-2. • Thus for a volume V containing line length l, Density = l/V. • An alternative definition, the number of dislocations intersecting a unit area, again measured in units of mm-2 . • If all the dislocations are parallel, the two density values are the same, but for completely random arrangement the volume density is twice the surface density. 10/15/08

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Stacking Faults • A stacking fault is a planer defects , • it is a local region in the crystal where the regular sequence has been interrupted. • The atomic arrangement on the plane of an fcc structure and the plane of an hcp structure could be obtained by the stacking of closed- packed planes of spheres. • For the fcc structure, the stacking sequence of the planes of atom is given by ABCABCABC. • For the hcp structure, the sequence is given by ABABAB and there is no alternate site for an A layer resting on B layer. 10/15/08

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• For the hcp structure, the sequence is given by ABABAB and there is no alternate site for an A layer resting on B layer. • In case of ABCABCABC stacking, A layer can rest equally well on either B or C position and geometrically there is no reason for the selection of a particular position. • Therefore in fcc lattice two types of stacking fault are possible. Either by removal or introduction of stacking sequence. 10/15/08

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• i) Intrinsic stacking fault part of the layer has been removed which results in a break of the stacking sequence. • ii) Extrinsic stacking fault. An extra layer has been introduced between B and C layer. There are two breaks in the stacking sequence. 10/15/08

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