Bc337-d

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BC337, BC337−25, BC337−40 Amplifier Transistors NPN Silicon http://onsemi.com

Features

• Pb−Free Packages are Available* COLLECTOR 1 2 BASE

MAXIMUM RATINGS Rating

Symbol

Value

Unit

Collector − Emitter Voltage

VCEO

45

Vdc

Collector − Base Voltage

VCBO

50

Vdc

Emitter − Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

IC

800

mAdc

Total Device Dissipation @ TA = 25°C Derate above 25°C

PD

625 5.0

mW mW/°C

Total Device Dissipation @ TC = 25°C Derate above 25°C

PD

1.5 12

W mW/°C

TJ, Tstg

−55 to +150

°C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

3 EMITTER

TO−92 CASE 29 STYLE 17 1

12

3 STRAIGHT LEAD BULK PACK

2

3 BENT LEAD TAPE & REEL AMMO PACK

MARKING DIAGRAM

BC33 7−xx AYWW G G

BC337−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 6

1

ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

Publication Order Number: BC337/D

BC337, BC337−25, BC337−40 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol

Min

Typ

Max

Unit

Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0)

V(BR)CEO

45





Vdc

Collector −Emitter Breakdown Voltage (IC = 100 mA, IE = 0)

V(BR)CES

50





Vdc

Emitter −Base Breakdown Voltage (IE = 10 mA, IC = 0)

V(BR)EBO

5.0





Vdc

Collector Cutoff Current (VCB = 30 V, IE = 0)

ICBO





100

nAdc

Collector Cutoff Current (VCE = 45 V, VBE = 0)

ICES





100

nAdc

Emitter Cutoff Current (VEB = 4.0 V, IC = 0)

IEBO





100

nAdc

100 160 250 60

− − − −

630 400 630 −

Characteristic OFF CHARACTERISTICS

ON CHARACTERISTICS hFE

DC Current Gain (IC = 100 mA, VCE = 1.0 V)



BC337 BC337−25 BC337−40

(IC = 300 mA, VCE = 1.0 V) Base−Emitter On Voltage (IC = 300 mA, VCE = 1.0 V)

VBE(on)





1.2

Vdc

Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)

VCE(sat)





0.7

Vdc

Cob



15



pF

fT



210



MHz

SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz)

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

1.0 0.7 0.5

D = 0.5

0.3

0.2

0.2

0.1

0.1 0.05 0.07 0.02 0.05 0.03

P(pk) SINGLE PULSE 0.01

t1 t2

SINGLE PULSE

DUTY CYCLE, D = t1/t2

0.02 0.01 0.001

qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t)

0.002

0.005

0.01

0.02

0.05

0.1

0.2 0.5 t, TIME (SECONDS)

1.0

Figure 1. Thermal Response

http://onsemi.com 2

2.0

5.0

10

20

50

100

BC337, BC337−25, BC337−40 1.0 s

1.0 ms

1000

TJ = 135°C 100 ms

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (mA)

1000

dc TC = 25°C dc TA = 25°C

100

10 1.0

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR−EMITTER VOLTAGE

VCE = 1 V TJ = 25°C

100

10 0.1

100

1.0 10 100 IC, COLLECTOR CURRENT (MA)

Figure 3. DC Current Gain

1.0

1.0 TJ = 25°C

TA = 25°C 0.8

0.8 V, VOLTAGE (VOLTS)

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. Active Region − Safe Operating Area

0.6 IC = 10 mA

0.4

100 mA

300 mA

500 mA

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V

0.6

0.4

0.2

0.2

VCE(sat) @ IC/IB = 10 0 0.01

0.1

1 IB, BASE CURRENT (mA)

10

0

100

1

Figure 4. Saturation Region

10 100 IC, COLLECTOR CURRENT (mA)

1000

Figure 5. “On” Voltages

100

+1 qVC for VCE(sat) C, CAPACITANCE (pF)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1000

0

−1

qVB for VBE

−2

1

10 100 IC, COLLECTOR CURRENT (mA)

Cib 10

Cob

1 0.1

1000

Figure 6. Temperature Coefficients

1 10 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitances

http://onsemi.com 3

100

BC337, BC337−25, BC337−40 ORDERING INFORMATION Marking

Package

Shipping†

BC337

7

TO−92

5000 Units / Bulk

BC337G

7

TO−92 (Pb−Free)

5000 Units / Bulk

BC337RL1G

7

TO−92 (Pb−Free)

2000 / Tape & Reel

BC337−25G

7−25

TO−92 (Pb−Free)

5000 Units / Bulk

BC337−25RL1

7−25

TO−92

2000 / Tape & Reel

BC337−25RL1G

7−25

TO−92 (Pb−Free)

2000 / Tape & Reel

BC337−25ZL1G

7−25

TO−92 (Pb−Free)

2000 / Ammo Box

BC337−40G

7−40

TO−92 (Pb−Free)

5000 Units / Bulk

BC337−40RL1G

7−40

TO−92 (Pb−Free)

2000 / Tape & Reel

BC337−40ZL1G

7−40

TO−92 (Pb−Free)

2000 / Ammo Box

Device

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

http://onsemi.com 4

BC337, BC337−25, BC337−40 PACKAGE DIMENSIONS

TO−92 (TO−226) CASE 29−11 ISSUE AM A

B

STRAIGHT LEAD BULK PACK

R P L SEATING PLANE

K

D

X X G

J

H V

C SECTION X−X

1

N

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V

INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−−

MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−−

N

A

R

BENT LEAD TAPE & REEL AMMO PACK

B

P

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

T SEATING PLANE

K

D

X X G

J V 1

C SECTION X−X

DIM A B C D G J K N P R V

MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−−

N

STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850

http://onsemi.com 5

ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative

BC337/D

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