Audio Transistor Amplifier

SEMICONDUCTOR

TIP35C

TECHNICAL DATA

TRIPLE DIFFUSED NPN TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION. A

Q

K

I

F

FEATURES

B

E

ᴌRecommended for 75W Audio Frequency

C

Amplifier Output Stage. J H

ᴌComplementary to TIP36C.

G

ᴌIcmax:25A.

L

D

d

MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

25

A

Base Current

IB

5.0

A

PC

125

W

Tj

150

ᴱ

Tstg

-55ᴕ150

ᴱ

Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range

P

1

P

2

T

M

3

DIM A B C D d E F G H I J K L M P Q T

MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 Φ3.2 + 0.6+0.3/-0.1

1. BASE 2. COLLECTOR 3. EMITTER

TO-3P(N)

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=100V, IE=0

-

-

10

Ọ A

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

-

10

Ọ A

V(BR)CEO

IC=50mA, IB=0

100

-

-

V

hFE(1) (Note)

VCE=5V, IC=1.5A

55

-

160

hFE(2)

VCE=4V, IC=15A

15

-

-

VCE(sat)(1)

IC=15A, IB=1.5A

-

-

1.8

VCE(sat)(2)

IC=25A, IB=5.0A

-

-

4.0

Base-Emitter Voltage

VBE

VCE=5V, IC=5A

-

-

1.5

V

Transition Frequency

fT

VCE=5V, IC=1A

3.0

-

-

MHz

Collector-emitter Breakdown Voltage DC Current Gain

Collector-Emitter Saturation Voltage

Note : hFE(1) Classification R:55~110,

2001. 1. 18

V

O:80~160

Revision No : 3

1/2

TIP35C

SWITCHING CHARACTERISTICS

2

10

1

5

T J =25 C VCC =30V I C /I B =10 I B1 =I B2

3

0.5 0.3

tr

TIME t (µS)

TIME t (µS)

SWITCHING CHARACTERISTICS

0.1 0.05

t d(on)

T J =25 C I C /I B =10

0.03

t stg

1 0.5 0.3

tf

VCC =30V

0.01 0.3

0.5

1

3

5

10 3

0.1

0

0.3

COLLECTOR CURRENT I C (A)

COLLECTOR CURRENT I C (A)

DC CURRENT GAIN h FE

500 300

100 50 30

1

3

5

10

25 20 15 10 5

30

0

60

80

100

120

100 COLLECTOR CURRENT I C (A)

125 100 75 50 25 0 75

40

FORWARD BIAS SAFE OPERATING AREA

150

50

20

COLLECTOR-EMITTER VOLTAGE V CE (V)

P D - Tc

25

30

10

< 100 C TJ =

0 0.5

5

30

VCE =4.0V T J =25 C

COLLECTOR CURRENT I C (A)

POWER DISSIPATION PD (W)

3

REVERSE BIAS SAFE OPERATING AREA

1K

0

1

COLLECTOR CURRENT I C (A)

h FE - I C

10 0.2

0.5

100

125

I C MAX.(PULSED)*

50 30

I C MAX (CONTINUOUS)

10 5 3

OP Tc ERA =2 TI 5 ON C

1 * SINGLE NONREPETITIVE PLUSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE

0.5 0.3

150 0.1

CASE TEMPERATURE Tc ( C)

DC

10mS* 1.0mS* 300µS*

1

3

5

10

30 50

100

200

COLLECTOR-EMITTER VOLTAGE V CE (V)

2001. 1. 18

Revision No : 3

2/2

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.