2w Output Amplifier Of Portable Radios In Class B Push-pull

SS8050

SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) TO-92

1

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

Collector-Base Voltage

Parameter

Ratings 40

Units V

VCEO VEBO

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

6

IC

Collector Current

V

1.5

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO

Parameter Collector-Base Breakdown Voltage

Test Condition IC=100µA, IE=0

Min. 40

BVCEO

Collector-Emitter Breakdown Voltage

IC=2mA, IB=0

25

BVEBO

Emitter-Base Breakdown Voltage

IE=100µA, IC=0

6

ICBO

Collector Cut-off Current

VCB=35V, IE=0

IEBO

Emitter Cut-off Current

VEB=6V, IC=0

hFE1 hFE2 hFE3

DC Current Gain

VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA

Typ.

Max.

Units V V V

45 85 40

100

nA

100

nA

300

VCE (sat)

Collector-Emitter Saturation Voltage

IC=800mA, IB=80mA

0.5

VBE (sat)

Base-Emitter Saturation Voltage

IC=800mA, IB=80mA

1.2

V

VBE (on)

Base-Emitter On Voltage

VCE=1V, IC=10mA

1

V

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

fT

Current Gain Bandwidth Product

VCE=10V, IC=50mA

V

9.0

pF

100

MHz

hFE Classification Classification

B

C

D

hFE2

85 ~ 160

120 ~ 200

160 ~ 300

©2004 Fairchild Semiconductor Corporation

Rev. B2, August 2004

SS8050

Typical Characteristics

0.5

1000

0.4

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

VCE = 1V

IB = 3.0mA IB = 2.5mA IB = 2.0mA

0.3

IB = 1.5mA 0.2

IB = 1.0mA 0.1

100

10

IB = 0.5mA

0

0.4

0.8

1.2

1.6

1 0.1

2.0

1

VCE[V], COLLECTOR-EMITTER VOLTAGE

10000

100

IC = 10 IB

VCE = 1V

VBE(sat) 1000

100

VCE(sat)

10 0.1

1000

Figure 2. DC current Gain

IC[mA], COLLECTOR CURRENT

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

100

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

1

10

100

10

1

0.1 0.0

1000

0.2

0.4

0.6

0.8

1.0

1.2

VBE[V], BASE-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

1000

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

1000

IE = 0 f = 1MHz

Cob [pF], CAPACITANCE

10

100

10

1 1

10

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

©2004 Fairchild Semiconductor Corporation

100

VCE = 10V

100

10

1 1

10

100

400

IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

Rev. B2, August 2004

SS8050

Package Dimensions

TO-92 +0.25

4.58 ±0.20

4.58 –0.15

±0.10

14.47 ±0.40

0.46

1.27TYP [1.27 ±0.20]

1.27TYP [1.27 ±0.20] ±0.20

(0.25)

+0.10

0.38 –0.05

1.02 ±0.10

3.86MAX

3.60

+0.10

0.38 –0.05

(R2.29)

Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation

Rev. B2, August 2004

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

©2004 Fairchild Semiconductor Corporation

Rev. I11