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UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE
1
TO-220F
1: Base 2: Collector 3: Emitter *Pb-free plating product number: 2SC5305L
ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise noted.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) Base Current (Pulse)* Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC ICP IB IBP PC Tj Tstg
RATINGS 800 400 12 5 10 2 4 75 150 -65 ~ 150
UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS (TC=25℃, unless otherwise noted.) PARAMETER Thermal Resistance Junction to Case Junction to Ambient
UTC
SYMBOL
RATINGS
UNIT
RθJC RθJA
1.65 62.5
℃/W
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
1 QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise noted.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2
TEST CONDITIONS IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.8A DC Current Gain VCE=1V,IC=2A IC=0.8A, IB=0.08A Collector-Emitter Saturation Voltage VCE (sat) IC=2A, IB=0.4A IC=0.8A, IB=0.08A Base-Emitter Saturation Voltage VBE (sat) IC=2A, IB=0.4A Output Capacitance Cob VCB = 10V, f=1MHz Turn ON Time tON VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A Storage Time tSTG RL = 150Ω Fall Time tF VCC=15V,VZ=300V Storage Time tSTG IC = 2A,IB1 = 0.4A Fall Time tF IB2 = -0.4A, LC=200µH IF = 1A Diode Forward Voltage VF IF = 2A IF = 0.4A Reverse recovery time* trr IF = 1A (di/dt =10A/µs) IF = 2A *Pulse Test : Pulse Width=5mS, Duty cycles≦10%
MIN 800 400 12
2 1
IB = 0
0 2
3
4
5
6
7
8
COLLECTOR-EMITTER VOLTAGE, V
UTC
ns
1.5 1.6
V
V
ns µs µs
800 1.4 1.9
9 CE
VCE = 1V
10
(V)
25℃ -25℃
10
1 0.01
0.1
1
10
COLLECTOR CURRENT, I C (A)
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
150
V
FE
IB = 50mA
1
pF ns µs µs µs
Ta = 125℃
IB = 100mA
0
0.4 0.5 1.0 1.0 75 150 2 0.2 2.25
DC current Gain
DC CURRENT GAIN, h
COLLECTOR CURRENT, I C (A)
3
UNIT V V V µA µA
22 8
100
IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA
4
MAX
10 10
Static Characteristic 5
TYP
2 QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
DC current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
100
10
SATURATION VOLTAGE, V V CE(sat) (V)
hFE, DC CURRENT GAIN
25℃ -20℃ 10
1 0.01
1
0.1
IC = 10 IB
BE(sat),
VCE = 5V
Ta = 125℃
10
VBE(sat)
1
VCE(sat) 0.1
0.01 0.01
COLLECTOR CURRENT, I C (A)
25℃ 1
Ta = 125℃ -20℃
0.01 0.01
0.1
1
10
SATURATION VOLTAGE, V BE(sat) (V)
SATURATION VOLTAGE, V CE(sat) (V)
Base-Emitter Saturation Voltage
IC = 5IB
0.1
10
IC = 5IB
1
-20℃ 25℃ Ta = 125℃
0.1 0.01
COLLECTOR CURRENT, IC (A)
f = 1MHz CAPACITANCE, Cob (pF)
tSTG 1
t
F
(µS)
10
Collector Output Capacitance
STG,
TIME, t
1
1000
VCC = 300V IC = 5IB1 = -2.5IB2
tF
0.1
0.1
COLLECTOR CURRENT, IC (A)
Switching Time 10
10
COLLECTOR CURRENT, I C (A)
Collector-Emitter Saturation Voltage 100
1
0.1
0.01
100
10
1 0.1
1
COLLECTOR CURRENT, I C (A)
UTC
10
1
10
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
100
COLLECTOR-BASE VOLTAGE, V CB (V)
3 QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
Reverse Recovery Time
Forward Diode Voltage 10
1.4
1.2
1.0
0.8 1.0
1.5
2.0
FORWARD DIODE VOLTAGE, V
F
REVERSE RECOVERY TIME, trr (µS)
(V)
1.6
1
0.1 0.01
FORWARD CURRENT, IF(A)
0.1
Safe Operating Area
10
Power Derating
100
C
(W)
100
10
1μs 10μs DC
1
5ms
1ms
0.1
POWER DISSIPATION, P
COLLECTOR CURRENT, I C (A)
1
FORWARD DIODE CURRENT, I F (A)
80 60
40
20
0
0.01 10
100
COLLECTOR-EMITTER VOLTAGE, V
1000 CE
(V)
0
25
50
75
100
125
CASE TEMPERATURE, T
C
150
175
(℃)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
4 QW-R219-003,A
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE
1
TO-220F
1: Base 2: Collector 3: Emitter *Pb-free plating product number: 2SC5305L
ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise noted.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) Base Current (Pulse)* Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC ICP IB IBP PC Tj Tstg
RATINGS 800 400 12 5 10 2 4 75 150 -65 ~ 150
UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS (TC=25℃, unless otherwise noted.) PARAMETER Thermal Resistance Junction to Case Junction to Ambient
UTC
SYMBOL
RATINGS
UNIT
RθJC RθJA
1.65 62.5
℃/W
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
1 QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise noted.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2
TEST CONDITIONS IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.8A DC Current Gain VCE=1V,IC=2A IC=0.8A, IB=0.08A Collector-Emitter Saturation Voltage VCE (sat) IC=2A, IB=0.4A IC=0.8A, IB=0.08A Base-Emitter Saturation Voltage VBE (sat) IC=2A, IB=0.4A Output Capacitance Cob VCB = 10V, f=1MHz Turn ON Time tON VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A Storage Time tSTG RL = 150Ω Fall Time tF VCC=15V,VZ=300V Storage Time tSTG IC = 2A,IB1 = 0.4A Fall Time tF IB2 = -0.4A, LC=200µH IF = 1A Diode Forward Voltage VF IF = 2A IF = 0.4A Reverse recovery time* trr IF = 1A (di/dt =10A/µs) IF = 2A *Pulse Test : Pulse Width=5mS, Duty cycles≦10%
MIN 800 400 12
2 1
IB = 0
0 2
3
4
5
6
7
8
COLLECTOR-EMITTER VOLTAGE, V
UTC
ns
1.5 1.6
V
V
ns µs µs
800 1.4 1.9
9 CE
VCE = 1V
10
(V)
25℃ -25℃
10
1 0.01
0.1
1
10
COLLECTOR CURRENT, I C (A)
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
150
V
FE
IB = 50mA
1
pF ns µs µs µs
Ta = 125℃
IB = 100mA
0
0.4 0.5 1.0 1.0 75 150 2 0.2 2.25
DC current Gain
DC CURRENT GAIN, h
COLLECTOR CURRENT, I C (A)
3
UNIT V V V µA µA
22 8
100
IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA
4
MAX
10 10
Static Characteristic 5
TYP
2 QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
DC current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
100
10
SATURATION VOLTAGE, V V CE(sat) (V)
hFE, DC CURRENT GAIN
25℃ -20℃ 10
1 0.01
1
0.1
IC = 10 IB
BE(sat),
VCE = 5V
Ta = 125℃
10
VBE(sat)
1
VCE(sat) 0.1
0.01 0.01
COLLECTOR CURRENT, I C (A)
25℃ 1
Ta = 125℃ -20℃
0.01 0.01
0.1
1
10
SATURATION VOLTAGE, V BE(sat) (V)
SATURATION VOLTAGE, V CE(sat) (V)
Base-Emitter Saturation Voltage
IC = 5IB
0.1
10
IC = 5IB
1
-20℃ 25℃ Ta = 125℃
0.1 0.01
COLLECTOR CURRENT, IC (A)
f = 1MHz CAPACITANCE, Cob (pF)
tSTG 1
t
F
(µS)
10
Collector Output Capacitance
STG,
TIME, t
1
1000
VCC = 300V IC = 5IB1 = -2.5IB2
tF
0.1
0.1
COLLECTOR CURRENT, IC (A)
Switching Time 10
10
COLLECTOR CURRENT, I C (A)
Collector-Emitter Saturation Voltage 100
1
0.1
0.01
100
10
1 0.1
1
COLLECTOR CURRENT, I C (A)
UTC
10
1
10
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
100
COLLECTOR-BASE VOLTAGE, V CB (V)
3 QW-R219-003,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
Reverse Recovery Time
Forward Diode Voltage 10
1.4
1.2
1.0
0.8 1.0
1.5
2.0
FORWARD DIODE VOLTAGE, V
F
REVERSE RECOVERY TIME, trr (µS)
(V)
1.6
1
0.1 0.01
FORWARD CURRENT, IF(A)
0.1
Safe Operating Area
10
Power Derating
100
C
(W)
100
10
1μs 10μs DC
1
5ms
1ms
0.1
POWER DISSIPATION, P
COLLECTOR CURRENT, I C (A)
1
FORWARD DIODE CURRENT, I F (A)
80 60
40
20
0
0.01 10
100
COLLECTOR-EMITTER VOLTAGE, V
1000 CE
(V)
0
25
50
75
100
125
CASE TEMPERATURE, T
C
150
175
(℃)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
4 QW-R219-003,A
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