Quiz.docx

1. Match the correct answer: Sl.No List-1 Solid state Device 1 Reflex Klystron 2 Gunn Diode 3 IMPATT Diode 4 TRAPATT Diode 5 BARITT Diode

i. ii. iii. iv.

Answer: 1 2 E A A B E B E D

3 B C A C

4 C D C A

A B C D E

List-2 Oscillation mechanism Transferred Electron effect Avalanche multiplication Plasma of charge carriers Minority charge carriers Velocity Modulation

5 D E D B

2. The semiconductor material used in Gunn diode is i. SiC ii. InTe iii. GaAs iv. CdP 3. A reflex Klystron is operated at a frequency of 10GHz with dc beam voltage 300V,repeller space 0.1cm for 1 ¾ mode. The maximum RF power is i. 1.750W ii. 1.365W iii. 367W iv. 6.74W 4. The microwave diode whose capacitance varies as a function of RB voltage is i. Tunnel diode ii. Gunn diode iii. Varactor diode iv. Crystal diode 5. In a Gunn diode, if the resonant circuit is tuned to a frequency slightly above that of TT mode, it is called i. Delayed mode ii. Quenched mode iii. TT mode iv. LSA mode 6. The drift velocity of electrons is 2 X 10 7 cm/s, through the active region of length 10 X 10-4 cm. The critical voltage of the Gunn diode is i. 32 KV ii. 32 V iii. 3.2v iv. 3.2KV 7. The following are microwave transistors i. MMIC

ii. MIC iii. HEMT iv. MESFET 8. The resistance of Pin diode decreases with increase in forward bias. This property is used in Pin i. Phase Shifter ii. Attenuator iii. Duplexer iv. Switch 9. In IMPATT diode the electric field is maximum at the following junction. i. n+p ii. pi iii. ip+ iv. pp+ 10. The diodes used for mixing and detection is i. Gunn diode ii. Impatt diode iii. Crystal diode iv. Schottky diode