On Transition Temperatures In The Plasticity And Fracture Of Semiconductors

On transition temperatures in the plasticity and fracture of semiconductors Authors: P. Pirouz a; J. L. Demenet b; M. H. Hong a Affiliations: a Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio, USA b Laboratoire de Mtallurgique Physique (Unit Mixte de Recherche associe au CNRS 630), SP2MI, Universit de Poitiers, Futuroscope Cedex, France DOI: 10.1080/01418610108214437 Published in: Philosophical Magazine A, Volume 81, Issue 5 May 2001 , pages 1207 1227 Number of References: 73 Formats available: PDF (English) Purchase Article: No online purchase options available.

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Abstract Recent experiments on deformation of semiconductors show an abrupt change in the variation in the critical resolved shear stress τY with temperature T. This implies a change in the deformation mechanism at a critical temperature Tc. In the cases examined so far in our laboratories (Case Western Reserve University and Poitiers) and elsewhere, this critical temperature appears to coincide approximately with the brittle-to-ductile transition temperature TBDT. In this paper, new deformation experiments performed on the wide-bandgap semiconductor 4H-SiC over a range of temperatures at two strain rates are described together with a transmission electron microscopy characterization of

induced dislocations below and above Tc. Based on these, and results recently reported on a few III-V compound semiconductors, a new model for the deformation of tetrahedrally coordinated materials at low and high temperatures is proposed, and the relation of the transition in deformation mode to the transition in fracture mode (brittle to ductile) is discussed