Multi Scale Modeling and Intricate Study of MEMS Based Elements in RFID systems Rohit Pathak Satyadhar Joshi
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Introduction and Aspects Covered • We have implemented some of the complex modeling aspects such as Multi Scale modeling, MATLAB, Sugar based modeling and have shown the complexities involved in the device modeling of Nano RFID systems taking example of MEMS models. • . We have proposed modeling of RFID using the concept of multi scale modeling to accurately predict its properties for MEMS specific applications. Also we give the modeling of MEMS devices that are proposed recently that can see possible application in RFID • RF MEMS has been matured and its devices are being successfully commercialized but taking it to limits of nano domains and integration with singly chip RFID needs a novel approach which is being proposed. We have modeled 2 MEMS based transponder and shown the distribution for multiscale modeling for Nano RFID.
MODELING OF RFID MEMS DEVICES • Result of the modeling and solutions proposed for elements of RFID which are proposed in recent years
ju n c [ 1 ] = n o d e { 0 , 0 , 0 ,} fo r j= 1 , 1 1 d o ju n c [ i+ 1 ] = n o d e { } b e a m 3 d { ju n c [ i] , ju n c [ i+ 1 ] ; m a te ria l= p 1 , l= h e a d Le n g th - tLe n , w =b m w } b e a m 3 d { ju n c [ i+ 1 ] , ju n c [ i+ 2 ] ; m a te ria l= p 1 , l= h e a d Le n g th , w = b m w , o z= 6 0 } h e a d Le n g th = h e a d Le n g th + exLe n ; ju n c [ i] = ju n c [ i+ 6 ] end
MODELING OF ABSTRACTION LEVEL RFID • The field strength path of a rectangular conductor loop with edge lengths at a distance from the center of coil in the xdirection can be computed by the
N ⋅ I ⋅ ab 1 1 H= ⋅ + 2 2 2 2 a b 2 2 a b 4π + + x 2 + x +x 2 2 2 2
fu n ctio n [ o u tp u t_a rg s ] = rf1 1 _e q 1 1 ( in p u t_a rg s ) sym s x ; n = 1 ; a = 1 ; b = 1 ; p i= 2 2 / 7 ; o n e = 4 * p i* (((( a / 2 ) ^ ( 2 )) + (( b / 2 ) ^ ( 2 )) + ( x^2 )) ^ ( 1 / 2 )); tw o = 1 /((( a / 2 ) ^ ( 2 )) + (( x ) ^ ( 2 ))); th re e = 1 /((( b / 2 ) ^ ( 2 )) + (( x ) ^ ( 2 ))); h = ( 1 / o n e ) * ( n * a * b ) * ( tw o + th re e ); i = 0 :. 1 : 1 0 ; j = su b s( h , x , i); p lo t( i, j);
MULTI SCALE MODELING ON WCS, DESIGNING THE FRAMEWORK FOR NANO RFID •
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Micro level MEMS based devices to Macro level calculations of abstraction layer. To study the effect of Nano scaled devices Modeling needs to be optimized so that different Levels of abstraction can be taken in account 1. Sub 30 nm Nano scale (and their effects) 2. 30-100 nm Nano scale 3. Over 100 nm Nano Scale 4. Over 1000 nm Macro Level
• Inductance of straight line strip which is the most common type of MEMS Inductors • Nano composite are poised to be the most important application • Higher inductances can be achieved using spiral inductors. • We know as that in RF and microwave circuits, the inductors are commonly used well below their selfresonance frequency.
Output of the Multi scale modeling computations.
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• Reliability of RFID based Nanotech systems will depend on many factors where multi scale modeling will play the most important role where we needs to correlate things from different abstraction layers to accurately predict aspects of reliability.
CONCLUSION AND FUTURE WORK • Thus we have addressed the main issues of Nano RFID that remains the major challenge for their practical implementation • We have shown the modeling of transponders, antenna and components of RFID that are recently proposed • Aspects of our library for Nano RFID have been shown where abstraction and multi scale modeling are covered. • We have modeled the current Nano-RFID under the current tools available as to unify the research going in RFID in the last decade. HPC will benefit multi scale modeling and will help in realization of true limits of this technology.