DRIVING TRANSISTORS AND THYRISTORS
•
Functionality of Gate/Base Drive Turn power switch from offstate to onstate Circuits • Minimize turnon time through active region where power dissipation is large • Provide adequate drive power to keep power switch in onstate
• Turn power switch from onstate to offstate • Minimize turnoff time through active region wherepower dissipation is large • Provide bias to insure that power switch remains off • Control power switch to protect it when overvoltages or overcurrents are sensed • Signal processing circuits which generate the logic control signals not considered part of the drive circuit • Drive circuit amplifies control signals to levels required to drive power switch • Drive circuit has significant power capabilities compared to logic level signal processing circuits • Provide electrical isolation when needed between power switch and logic level signal processing/control circuits
Drive Circuit Design Considerations • Drive circuit topologies • Output signal polarity unipolar or bipolar • AC or DC coupled • Connected in shunt or series with power switch • Output current magnitude • Large Ion shortens turnon time but lengthens turnoff delay time • Large Ioff shortens turnoff time but lengthens turnon delay time • Provisions for power switch protection • Overcurrents • Blanking times for bridge circuit drives
t
0
Unipolar
0
• Waveshaping to improve switch performance • Controlled diB/dt for BJT turnoff • Antisaturation diodes for BJT drives • Speedup capacitors • Frontporch/backporch currents • Component layout to minimize stray inductance and shielding from switching noise
t
Bipolar
Unipolar DCcoupled Drive Circuit BJT Example •
Circuit operation • V control > Vreference - BJ T at comparator output on which puts Qpnp and Qsw on •
•
V control < Vreference - BJ T at comparator output off which turns Qpnp off and thus Qsw off
V
V d
BB
Design procedure V BE,off
•
R2 = IB,off
•
Ipnp = IB,on +
•
value of Io. V BB = VCE,on(Qpnp) + R1 IC,pnp + VBE,on(Qsw) V BB = 8 to 10 V ; compromise between larger values which
•
; IB,off based on desired turn-off time. V BE,on R2
; IB,on value based on BJ T beta and
minimize effects of V BE variations and smaller values which minimize power dissipation in drive circuit
Comparator Vcontrol
Q pnp R1 R
Vreference
Io
2
Q sw
Unipolar DCcoupled Drive Circuits MOSFET examples V
V d
BB
Comparator V control
Io
R1 R2
V control
> V reference
comparator output high and Q sw on • V control
Q sw
-
•
< V reference
comparator output low and Q sw off
+ V reference
V GG
V d Io
Comparator Vcontrol
R1
+
R
G
Q sw
• V control
comparator output high putting Q npn on and thus Q sw on • V control
< V reference
comparator output low putting Q pnp on and thus Q sw off
Vreference V
> Vreference
V
GG
d
Io V control
IC buffer amp with totem pole output DS0026 or UC1706/07
R
G
Q sw
Bipolar DCcoupled Drive Circuit BJT Example
V d
V BB+ Comparator
R
Df
B
Vcontrol
T
+ -
B+
CBB+ Qsw
T BC V
BB-
Io
BB-
• Vcontrol < Vreference comparator output low, TB on and Qsw off. • Large reverse base current flows to minimize turnoff time and baseemitter of Qsw reversed biased to insure off state. • Vcontrol > Vreference comparator output high, TB+ on and Qsw on. • Large forward base current to minimize turnon time and to insure saturation of Qsw for low onstate losses
Bipolar DCcoupled Drive Circuit MOSFET Example V d
VGG+ Comparator T
Vcontrol
Io
D f B+
C
+ R
V reference
Qsw
G
T BC V
GG-
GGV d
V GG+
Io
C GG+ V control
• Bipolar drive with substantial output current capability
GG+
IC buffer amp with totem pole output DS0026 or UC1706/07 C GGV GG-
R
G
Q sw
• Simple bipolar drive circuit with moderate (1 amp)output current capability
Methods of Control Signal Isolation Input to remainder of isolated drive circuit
Logic level control ckts
Power switch reference node (BJT emitter, MOSFET source)
Logic ground Lightemitting diode
V
BB+
Signal from control logic Control logic ground
• Transformer isolation
Isolated dc supply
Input to remainder of isolated drive circuit
• Optocoupler isolation
Power switch reference node Photo-transistor
V
BB+
AC power in
• Isolated dc power supplies for drive circuits V BB-
GATE DRIVE DESIGN
Qg 3 − Qg 2 Vgg tdoff = Rg ⋅ n Vgg − Vg 2 Vg 2
Thyristor Gate Drive Circuit 1
4
3
2
Line Voltage
DC power supply for gate trigger circuit
zero crossing detection
Input Control Signal
Delay Angle Block
Control Logic Ground
gate pulse isolation transformers
Pulse Amplifier
gate pulse isolation transformers
Delay angle block is commercially available integrated circuit TCA780 circuit family
Thyristor Gate Drive Circuit (cont.) Transformer Line Voltage
α
α
α
Ramp
Control voltage
Thyristor gate drive waveforms
Control of 1&2 Control of 3&4
D1 15 V D
f
Trigger signal
R
G
T
G
Gate pulse amplifier
GTO Gate Drive Circuit R
R
2 T
R
T
G2
G1
10 A pulse
1 R
4
R
5
V 6
GG+
2A Lσ 1 R
Control Circuit
3
L
Lσ 2
G V
R
GG-
7 T
G3 turn-off pulse
Auxilliary power supply for gate drive circuit
• Turn on TG1and TG2 to get large frontporch current • Turn off TG1 after some specified time to reduce total gate current to backporch value.