Combustion and Micr owave Routes for Synthesis of Nanomaterials: A case study
Smita Acharya 12/03/09
Asst Professor, Deptt of Physics St Vincent Pallotti College of Engg. & Tech., Nagpur
Outline Combustion Synthesis of rear earthdoped CeO2
Microwave Synthesis of Metal sulfide & Metal oxide semiconductor.
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Nanomaterials Preparation by Combustion Technique
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Calculation of oxidizing and reducing valences for combustion ---• Concept of propellant chemistry is used for valence calculation. • The valence of N = 0, O = -2, C = +4, H = +1, divalent metal ions = +2, Trivalent metal ions = +3 and trivalent metal ions = +4.
• Based on this consideration, divalent metal nitrate Ca4(NO3)3 have oxidizing
valency is ?, trivalent metal nitrate Gd2(NO3)3 ? and tetravalent metal nitrate Ce(NO3)3?
• Glycine (C2NH5O2) has reducing valency ?
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Precursor calculation for 5 gm sample
Sample
Sample
Weight (gm)
CeO2
5.00
?
Gd2O3
5.00
?
Ca4O3
5.00
?
Ce(NO3)3
Ce0.95 Gd0.05 O2- δ 4.7406
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C2NH5O2
Gd2(NO3)3
C2NH5O2
0.2593
?
combustion synthesis Ce (NO3)3
Dissolved in distilled water at 80°C
Introduce into furnace at 550°C 5 min. Foam of CeO2 Product
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Glycine
X-RD
By Scherrer Equation: 6000C
28.9 nm 5000C
20.6 nm
As prepared powder [loosely agglomerated to form porous network]
4000C 4000C
17.2 nm
X-RD of pure ceria
X-RD of Sm-doped-Ceria 12/03/09
Calcined powder at 5000C for 2 h. [particles are roughly in spherical morphology with particles size 1217 nm]
X-RD continue XRD of powders calcined at 500oC show that samarium form solid solution with fluorite structure in ceria
Ce(1-x) SmxO2- δ (SDC) for x = 0.05 to 0.30 mol %
Unit cell parameter increases with increasing Sm content in good agreement with effective ionic radii considerations rCe 4+ = 0.96 nm, rSm 3+ = 0.121 nm. Solubility limit of samarium in ceria is around 20 mol %
Dopant content vrs lattice parameter
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Impedance spectroscopy and conductivity of Sm-doped-Ceria calcined at different temperature
-10
0
SDC2080 (380 C) o 0C 1- Sintered 1300 1 - calcined at at600 C 0 2Sintered at 1100 C 2 – calcined at o 500 C
Z"(K.ohm)
-8 -6 -4 -2 0
1
2
0
2
4
6
8
10
Comparison of Impedance plot of SDC2080 pellets calcined at (1) 600oC and (2) 500oC for 2 h.
Z'(K.ohm)
Log(σ T) (S/cm)K
1.5 0 -1.5 -3 -4.5 1
1.2
1.4
1000/T (K ) -1
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1.6
Arrhenius plot of SDC2080 calcined at (° ) 500oC and (♦ ) 600oC for 2 h.
Microstructure of pellets sintered at different temperature
SEM of SDC15 pellets sintered at © 900oC (d) 1000oC (e) 1100oC and (f) 1200oC for 3 h . [Isothermal sintering give rise different grain sizes with varying sintering temperature.]
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Impedance spectroscopy and conductivity of Sm-doped-Ceria Sintered at different temperature Sintering temperature a- 1100C b- 1200C c- 1300C d- 1400C
Impedance diagram of pellets sintered at different temperature for 3 h. measuring temperature 350oC
1100 1200 1300 1400 1500
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Arrhenius plots of conductivity
Microwave Synthesis • Microwave is electromagnetic waves with frequencies between 300 MHz to 300 GHz. • The electric field applies a force on charge particles start to migrate or rotate. Due to the movement of charged particles, further polarization of polar particles takes place.
• The concerted forces applied by the electric and magnetic components of microwave are rapidly changing in direction, which creates friction and collisions of the molecules.
• As microwave can penetrate materials and deposit energy, heat can be generated throughout the volume of the materials.
• Thus, microwave energy is delivered directly to materials through molecular interaction, which enable to achieve rapid and uniform heating of thick materials.
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Magnetic Materials •
•
Hard disk drive (HDD) technology has achieved recording density over 100 Gbit/(inch)2.
Forfurtherincreaseofthedensitytowardsterrabitrecording, nanosizedmagneticcrystallitesarerequiredinrecordingmedia.
An array of Fe-Pt nanoparticles is one of the candidates to satisfy the requirement of the terabit recording. •
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Fe-Pt Materials Ferrious acetylacetone + Platinum diacetylacetonate
Mixed in inert atm. with Tetraethylen e glycol
280 W for 30 min
Precipitate washed / centrifugation with argon for 4 times at 7000 rpm Washed with deionized water
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Dried in vacuum
10 nm
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Zinc Sulfide
• Zinc sulfide is wide band gap semiconductor material. • An efficient phosphor in flat panel displays, cathode ray tubes, in thin film electroluminescent devices and infrared window. • Zinc doped with metal cations are reported to emit intense light upon application of stress. • This makes materials promising candidates in newly emerging mechanooptical devices.
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Experimental Details ZnCl2.6H2O + thiourea
0.05 M solution in double distilled water
140 W & 30 min
Precipitate washed / centrifugation with argon for 4 times at 7000 rpm
Dry a room temperature
Washed with deionized water
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3.5
10m 15m 20m 25m 30m 40m
Intensity
3.0 2.5 2.0
309nm
1.5
1.0 0.5
0.0
300
400
500
600
W avelength(nm )
3.5
Intensity
3.0
20% 30% 35% 40% 50%
2.5 2.0 1.5 1.0 0.5 0.0
300
400
W avelength(nm )
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500
600
200 nm
100 nm
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500
Experimental Details TbCl2.6H2O + MnCl2.4H2O 1:1 0.05 M solution in double distilled water
•0.05 M solution of KOH
140 W & 30 min Vacuum Evaporation
Calcined at 8000C for 90 min
Dry at room temperature Precipitation separated by acetone
TbMnO3 by microwave and conventional methods
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Thank you 12/03/09