Dip Pen Nano Lithography

Dip--Pen Nanolithography Dip Line th hickness (nm)

160

B

A

120 80

D

10

2 4 6 8 Tip speed-1 (s/m)

10

40 0 0

C

5

0

800nm

30nm

53nm

25nm

James J. De Yoreo et. al. LLNL

Lithography

C. S C S. Mirkin Mirkin, et et. al, al Science, Science 283, 283 661 (1999); Science 286, 523 (1999); 288, 1808 (2000). J. J. De Yoreo et. al., Nanoletters 2, 109 (2002); PRL 88, PRL, 88 255505 (2002) (2002).

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Liu, UCD Phy250-2, 2009, NanoFab

II--F. Step Growth II Substrate modification to create steps, patches, etc. Subsequent growth lead to isolated patterns

D Depends d on hhow th the steps t are created t d Deposition on both grooves and ridges -directional deposition grazing angle V groove V-groove

Each patch 1 x 1 m Gadetsky et al. JAP 79, 5687 (1996). Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Step GrowthGrowth-2

O. Hellwig, et al, APL 93, 192501 (2008).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Step GrowthGrowth-3 V-grooved substrates

Shinjo & Ono, JMMM 177-181, 31-36 (1998). Current Perpendicular to the Plane (CPP)

GMR 2007 Physics Nobel Prize Current In the Plane (CIP)

Lithography

(a)

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High Resistance

Low Resistance

Liu, UCD Phy250-2, 2009, NanoFab

Step GrowthGrowth-4 Miscut substrate Thickness limited by step thickness Low angle deposition

Sussiau et. al. APL 69 857 (1996). Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Step GrowthGrowth-5 Miscut substrate

Lin, et al, APL 78, 829 (2001). Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Step GrowthGrowth-6 Annealed NaCl substrates

Sugawara & Scheinfein, PRB 56, 8499 (1997).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

II--G. Nanoimprint II Master mold Deform resist Etching Fast

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Nanoimprint--2 Nanoimprint

Chou et. al. J. Vac. Sci. Technol. B 15 2897 (1997).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Nanoimprint-3 Nanoimprintp Stamper

McClelland, Hart, Rettner, Best, Carter, Terris APL, 81, 1483 (2002).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Nanoimprint-4 Nanoimprintp Laser Assisted Direct Imprint Figure 1 Schematic of laser-assisted direct imprint (LADI) of nanostructures in silicon. a, A quartz mould is brought into contact with the silicon substrate. A force presses the mould against the substrate. b, A single XeCl (308 nm wavelength) excimer laser pulse (20 nm pulse width) melts a thin surface layer of Si. c, The molten silicon is embossed while the silicon is in the liquid phase. phase d, d The silicon rapidly solidifies. e, The mould and silicon substrate are separated, leaving a negative profile of the mould patterned in the silicon. f , The reflectivity of a HeNe laser beam from the silicon surface versus the time, when the silicon surface is irradiated byy a single g XeCl -2 (308 nm) laser pulse with 1.6 mJ cm fluence and 20 ns pulse duration. Molten Si, becoming a metal, gives a higher reflectivity. The measured reflectivity shows the silicon in liquid state for about 220 ns.

Chou, Keimel, and Gu, Nature, 417, 835 (2002).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Nanoimprint-5 Nanoimprintp Laser Assisted Direct Imprint Figure 3 SEM image of the cross-section of samples patterned using LADI. a, A quartz mould. b , Imprinted patterns in silicon. The imprinted silicon grating is 140 nm wide, 110 nm deep and has a 300 nm period, an inverse of the mould. We note that the 10 nm wide and 15 nm tall silicon lines at each top corner of the silicon grating ti are the th inverted i t d replicas li off the th small ll notches t h on the th mould ld (the notches were caused by the reactive ion etching trenching during mould fabrication). This indicates the sub-10-nm resolution of the LADI process. (These images are representative only. In fact, the Si structure in the image was probably not imprinted by the structure shown in the mould image.)

Chou, Keimel, and Gu, Nature, 417, 835 (2002).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

II--H. Shadow Mask II

Liu,, et. al. APL 81, 4434, (2002).

Thickness ~ hole size Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Shadow MaskMask-2

Masuda, Yasui, Nishio, Adv. Mater. 12, 1031, (2000). Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

II--I. SelfII Self-Assembly: NucleationNucleation-1 Ni dots on Au (111)

Chambliss, Wilson, Chiang, PRL 66, 1721 (1991). Other systems: Co on Au (111) Fe & Co on Cu (11) Co on N2 adsorbed Cu (100) & Cu (110) Fe-Ag on Mo (110) Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Self--Assembly: NucleationSelf Nucleation-2 Co dots on Au (111)

Voigtlander, Meyer, Amer, PRB 44, 10354 (1991).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab

Self--Assembly: NucleationSelf Nucleation-3 Co pillars on Au (111)

Fruchart,, Klaua,, Barthel,, Kirschner PRL 83, 2769 (1999).

Lithography

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Liu, UCD Phy250-2, 2009, NanoFab