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MCC 161 MCD 161
ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V
High Voltage Thyristor Module
VRSM VDSM
VRRM VDRM
V
V
2100 2300
2000 2200
MCC 3
Type
6 7 1
5 4 2
3
6 7
2 1
MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1
Symbol
Conditions
ITRMS ITAVM
TVJ = TVJM TC = 85°C; 180° sine
ITSM
TVJ = 45°C; VR = 0
MCD 3
1
Maximum Ratings
Features • International standard package • Direct Copper Bonded Al2O3-ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins
A A
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
6000 6400
A A
TVJ = TVJM; VR = 0
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
5250 5600
A A
TVJ = 45°C; VR = 0
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
180000 170000
A2s A2 s
TVJ = TVJM; VR = 0
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
137000 128000
A2s A2 s
150
A/µs
500
A/µs
• Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches
1000
V/µs
Advantages
PGAV
120 60 8
W W W
VRGM
10
V
TVJ TVJM Tstg
-40...125 125 -40...125
°C °C °C
3000 3600
V~ V~
2.25-2.75 4.5-5.5
Nm Nm
125
g
(di/dt)cr
TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 µs; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/µs
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM; IT = ITAVM;
tP = 30 µs tP = 500 µs
VISOL
50/60 Hz, RMS; t = 1 min IISOL < 1 mA; t=1s
Md
Mounting torque (M6) Terminal connection torque (M6)
Weight
Typical including screws
4
54 2
300 165
I2dt
5
Applications
• Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits
IXYS reserves the right to change limits, test conditions and dimensions
© 2005 IXYS All rights reserved
0540
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
1-3
MCC 161 MCD 161 Symbol
Conditions
IRRM, IDRM
VR = VRRM;
Characteristic Values
VT
IT = 300A; TVJ = 25°C
VT0 rT
40
mA
1.36
V
For power-loss calculations only (TVJ = TVJM)
0.8 1.6
V mΩ
VGT
VD = 6 V;
IGT
VD = 6 V;
2 2.6 150 200
V V mA mA
VGD IGD
VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM
0.25 10
V mA
IL
TVJ = 25°C; VD = 6 V; tP = 30 µs diG/dt = 0.45 A/µs; IG = 0.45 A
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM diG/dt = 0.5 A/µs; IG = 0.5 A
2
µs
tq
TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs
typ. 150
µs
QS IRM
TVJ = TVJM -di/dt = 50 A/µs; IT = 300 A
550 235
µC A
RthJC
per thyristor; DC current per module per thyristor; DC current per module
0.155 0.078 0.225 0.113
K/W K/W K/W K/W
12.7 9.6 50
mm mm m/s2
RthJK dS dA a
TVJ = TVJM
TVJ TVJ TVJ TVJ
= 25°C = -40°C = 25°C = -40°C
Creeping distance on surface Creepage distance in air Maximum allowable acceleration
Fig. 1 Gate trigger characteristics
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate trigger delay time 500 IT, 450 A IF 400 350 300 250 200 150 100
TVJ = 125°C TVJ = 25°C
50 0
© 2005 IXYS All rights reserved
0.0
0.5
1.0
1.5
V
2.0
VT, VF
Fig 3: Forward current vs. voltage drop per thyristor/diode
0540
Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
2-3
MCC 161 MCD 161 6000
106
50 Hz 80% VRRM
350
2
A 300
It
5000
DC
2
As
ITAVM, 250 I
A ITSM4000 , IFSM
FAVM
TVJ = 45°C
200
TVJ = 45°C
3000
180° sin
105
120° rect 150
TVJ = 125°C
60° rect
2000 100 50
0 0.001
0.01
0.1
104
ms
1
0 1
0
10
s
t
25
50
°C 100 TC
75
t
Fig. 5: I2t versus time per diode
Fig. 4: Surge overload current ITSM, IFSM = f(t)
125
Fig. 6: Max. forward current at case temperature ITAVM/FAVM = f (TC,d)
2000
400 Ptot
30° rect
TVJ = 125°C
1000
RthKA K/W
RthKA K/W
W 360
0.1
Ptot
0.2
320
W 1800
0.02 0.04
1600
0.06
0.3
280
1400
0.5 0.8
240
0.1 0.15
1200
0.20
1.5
200
DC
160
1000
2
800
180° sin 120° rect
120
600
60° rect
400
30° rect
80
0.30
200
40
0
0 0
50 100 150 200 A 250 IFAVM, ITAVM
0
25
50
75
C 100
0
125
100
200
400 A 0 IDAVM
300
TA
Fig. 7: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode)
25
50
75
C 100
125
TA
Fig. 8: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge)
0.3
RthJC for various condition angles: d
K/W
DC_ 180° 120° 60° 30°
0.2 ZthJC
RthJC (K/W) 0.155 0.171 0.184 0.222 0.294
Constants for ZthJC calculation (DC):
0.1 30° 60° 120° 180° DC
0.0 10-3
10-2
10-1
100
i
s
101 t
102
1 2 3 4 5
Rthi (K/W)
ti (s)
0.012 0.008 0.03 0.073 0.032
0.00014 0.019 0.18 0.52 1.6
0540
Fig. 9: Transient thermal impedance junction to case ZthjC at various conduction angles
© 2005 IXYS All rights reserved
3-3
ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V
High Voltage Thyristor Module
VRSM VDSM
VRRM VDRM
V
V
2100 2300
2000 2200
MCC 3
Type
6 7 1
5 4 2
3
6 7
2 1
MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1
Symbol
Conditions
ITRMS ITAVM
TVJ = TVJM TC = 85°C; 180° sine
ITSM
TVJ = 45°C; VR = 0
MCD 3
1
Maximum Ratings
Features • International standard package • Direct Copper Bonded Al2O3-ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins
A A
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
6000 6400
A A
TVJ = TVJM; VR = 0
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
5250 5600
A A
TVJ = 45°C; VR = 0
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
180000 170000
A2s A2 s
TVJ = TVJM; VR = 0
t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
137000 128000
A2s A2 s
150
A/µs
500
A/µs
• Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches
1000
V/µs
Advantages
PGAV
120 60 8
W W W
VRGM
10
V
TVJ TVJM Tstg
-40...125 125 -40...125
°C °C °C
3000 3600
V~ V~
2.25-2.75 4.5-5.5
Nm Nm
125
g
(di/dt)cr
TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 µs; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/µs
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = TVJM; IT = ITAVM;
tP = 30 µs tP = 500 µs
VISOL
50/60 Hz, RMS; t = 1 min IISOL < 1 mA; t=1s
Md
Mounting torque (M6) Terminal connection torque (M6)
Weight
Typical including screws
4
54 2
300 165
I2dt
5
Applications
• Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits
IXYS reserves the right to change limits, test conditions and dimensions
© 2005 IXYS All rights reserved
0540
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
1-3
MCC 161 MCD 161 Symbol
Conditions
IRRM, IDRM
VR = VRRM;
Characteristic Values
VT
IT = 300A; TVJ = 25°C
VT0 rT
40
mA
1.36
V
For power-loss calculations only (TVJ = TVJM)
0.8 1.6
V mΩ
VGT
VD = 6 V;
IGT
VD = 6 V;
2 2.6 150 200
V V mA mA
VGD IGD
VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM
0.25 10
V mA
IL
TVJ = 25°C; VD = 6 V; tP = 30 µs diG/dt = 0.45 A/µs; IG = 0.45 A
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM diG/dt = 0.5 A/µs; IG = 0.5 A
2
µs
tq
TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs
typ. 150
µs
QS IRM
TVJ = TVJM -di/dt = 50 A/µs; IT = 300 A
550 235
µC A
RthJC
per thyristor; DC current per module per thyristor; DC current per module
0.155 0.078 0.225 0.113
K/W K/W K/W K/W
12.7 9.6 50
mm mm m/s2
RthJK dS dA a
TVJ = TVJM
TVJ TVJ TVJ TVJ
= 25°C = -40°C = 25°C = -40°C
Creeping distance on surface Creepage distance in air Maximum allowable acceleration
Fig. 1 Gate trigger characteristics
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate trigger delay time 500 IT, 450 A IF 400 350 300 250 200 150 100
TVJ = 125°C TVJ = 25°C
50 0
© 2005 IXYS All rights reserved
0.0
0.5
1.0
1.5
V
2.0
VT, VF
Fig 3: Forward current vs. voltage drop per thyristor/diode
0540
Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
2-3
MCC 161 MCD 161 6000
106
50 Hz 80% VRRM
350
2
A 300
It
5000
DC
2
As
ITAVM, 250 I
A ITSM4000 , IFSM
FAVM
TVJ = 45°C
200
TVJ = 45°C
3000
180° sin
105
120° rect 150
TVJ = 125°C
60° rect
2000 100 50
0 0.001
0.01
0.1
104
ms
1
0 1
0
10
s
t
25
50
°C 100 TC
75
t
Fig. 5: I2t versus time per diode
Fig. 4: Surge overload current ITSM, IFSM = f(t)
125
Fig. 6: Max. forward current at case temperature ITAVM/FAVM = f (TC,d)
2000
400 Ptot
30° rect
TVJ = 125°C
1000
RthKA K/W
RthKA K/W
W 360
0.1
Ptot
0.2
320
W 1800
0.02 0.04
1600
0.06
0.3
280
1400
0.5 0.8
240
0.1 0.15
1200
0.20
1.5
200
DC
160
1000
2
800
180° sin 120° rect
120
600
60° rect
400
30° rect
80
0.30
200
40
0
0 0
50 100 150 200 A 250 IFAVM, ITAVM
0
25
50
75
C 100
0
125
100
200
400 A 0 IDAVM
300
TA
Fig. 7: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode)
25
50
75
C 100
125
TA
Fig. 8: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge)
0.3
RthJC for various condition angles: d
K/W
DC_ 180° 120° 60° 30°
0.2 ZthJC
RthJC (K/W) 0.155 0.171 0.184 0.222 0.294
Constants for ZthJC calculation (DC):
0.1 30° 60° 120° 180° DC
0.0 10-3
10-2
10-1
100
i
s
101 t
102
1 2 3 4 5
Rthi (K/W)
ti (s)
0.012 0.008 0.03 0.073 0.032
0.00014 0.019 0.18 0.52 1.6
0540
Fig. 9: Transient thermal impedance junction to case ZthjC at various conduction angles
© 2005 IXYS All rights reserved
3-3
