Array

Bulletin No T07 EB0 (Mar.,2001)

CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. • Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users’ responsibility. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • Anti radioactive ray design is not considered for the products listed herein. • This publication shall not be reproduced in whole or in part without prior written approval from Sanken.

Ordering Specify the number of standard minimum packaged units when placing an order. Standard minimum packaged unit

Package Type

Cardboard Box

Stick

SLA

50

108

SMA

120

108

STA300

100

STA400

80

Series

STA500 SDK

Reel

110 1200

Contents Product index by Part Number .................................................... 2 Product index by function (Sink Driver) ......................................... 4 Product index by function (Source Driver)...................................... 6 Product index by function (Motor Driver) ....................................... 8 Product index by applications.................................................. 10 Storage, characteristic inspection, and handling precautions ........... 13 Avalanche energy capability of MOSFET array .............................. 14 Transistor array with built-in avalanche diode .............................. 16 Switching time measurement .................................................. 16 External dimensions ............................................................. 17 SLA packages ..................................................................... 18 SMA packages ................................................................... 122 STA packages .................................................................... 152 SD packages (surface mount) ................................................. 191

1

Product index by Part Number Part Number SDA01 SDA05 SDC01 SDC03 SDC04 SDC06 SDC07 SDH02 SDH03 SDK02 SDK04 SLA4010 SLA4030 SLA4031 SLA4041 SLA4060 SLA4061 SLA4070 SLA4071 SLA4310 SLA4340 SLA4390 SLA4391 SLA5001 SLA5002 SLA5003 SLA5004 SLA5005 SLA5006 SLA5007 SLA5008 SLA5009 SLA5010 SLA5011 SLA5012 SLA5013 SLA5015 SLA5017 SLA5018 SLA5021 SLA5022 SLA5023 SLA5024 SLA5029 SLA5031 SLA5037 SLA5040 SLA5041 SLA5042 SLA5044 SLA5046 SLA5047 SLA5049 SLA5052 SLA5054 SLA5055 SLA5057 SLA5058 SLA5059 SLA5060 SLA5061 SLA5064 SLA5065 SLA5068 SLA5070 SLA5072 SLA5073 SLA5074 SLA5075 SLA5077 SLA5079

2

Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) Source driver 4 –60 –1.5 2000 3–phase motor driver 3 –60 –4 2000 Sink driver 4 50 2 1000 Sink driver 4 60±10 1.5 2000 Sink driver 4 100±15 1.5 2000 Sink driver 4 30 to 45 2 400 3–phase motor driver 3 60 4 2000 Sink driver 4 100 1.5 2000 H–bridge driver 4 +100/–60 ±1.5 2000 Sink driver 4 60 2 Sink driver 4 100 2 Sink driver 4 60±10 4 2000 Sink driver 4 100 4 2000 Sink driver 4 120 4 2000 Sink driver 4 200 3 1000 Sink driver 4 120 5 2000 Sink driver 4 120 5 2000 Source driver 4 –100 –5 1000 Source driver 4 –100 –5 2000 H–bridge driver 4 ±60 ±4 80 H–bridge driver 4 ±60 ±4 2000 H–bridge driver 4 ±100 ±5 2000 H–bridge driver 4 ±100 ±5 1000 Sink driver 4 100 5 Sink driver 4 100 5 Sink driver 4 200 5 Source driver 4 –60 –5 Source driver 4 –100 –5 Source driver 4 –100 –5 H–bridge driver 4 ±60 +5/–4 H–bridge driver 4 ±100 +4/–3 3–phase motor driver 6 ±60 +5/–4 3–phase motor driver 6 ±100 +4/–3 Sink driver 5 60 5 Source driver 5 –60 –5 H–bridge driver 4 ±100 ±5 Source driver 5 –60 –4 3–phase motor driver 6 ±60 +5/–4 H–bridge driver 4 ±60 +5/–4 Sink driver 5 100 5 3–phase motor driver 6 ±60 ±6 2000 3–phase motor driver 6 ±100 ±6 2000 Source driver 4 –60 –4 Sink driver 5 60 4 Sink driver 4 60 5 Sink driver 4 100 10 Sink driver 4 100 4 Sink driver 4 200 10 Sink driver 5 100 5 Sink driver 4 250 10 Sink driver 5 200 7 Sink driver 4 150 10 Sink driver 5 250 7 Sink driver 4 150 10 Sink driver 6 150 ±7/±5/±7 Sink driver 5 150 ±5/±7 Sink driver 6 200 ±7/±7 Sink driver 5 150 ±7 3–phase motor driver 6 60 ±4 3–phase motor driver 6 60 ±6 3–phase motor driver 6 60 ±10 3–phase motor driver 6 60 ±10 5–phase motor driver 4 60 7 5–phase motor driver 6 60 7 Sink driver 6 150 ±7/±7 3–phase motor driver 6 250 7 5–phase motor driver 6 60 5 5–phase motor driver 4 60 5 3–phase motor driver 6 500 ±5 Sink driver 4 150 ±10 3–phase motor driver 3 –60 –10

RDS (ON) max (Ω)

0.24 0.8

0.3 0.3 0.9 0.3 0.7 0.7 0.22/0.55 0.6/1.3 0.22/0.55 0.6/1.3 0.22 0.3 0.3/0.7 0.55 0.22/0.55 0.22/0.55 0.19 0.22 0.55 0.55 0.45 0.3 0.08 0.6 0.175 0.185 0.25 0.35 0.085 0.5 0.115 0.105/0.44/0.2 0.44/0.2 0.175/0.35 0.2 0.55 0.22 0.14 0.14 0.1 0.1 0.105/0.2 0.5 0.3 0.3 1.4 0.2 0.14

Package SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SMD 16-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 12-pin with fin

Page 191 192 193 194 195 196 197 198 200 202 203 18 19 20 21 22 23 24 25 26 28 30 32 34 35 36 37 38 39 40 42 44 46 48 49 50 52 54 56 58 60 62 64 65 66 67 68 69 70 71 72 73 74 75 76 78 80 81 82 84 86 88 90 91 92 94 95 96 97 98 99

Part Number SLA5080 SLA5081 SLA5085 SLA5086 SLA5088 SLA6012 SLA6020 SLA6022 SLA6023 SLA6024 SLA6026 SLA8001 SMA4020 SMA4021 SMA4030 SMA4032 SMA4033 SMA5101 SMA5102 SMA5103 SMA5104 SMA5105 SMA5106 SMA5112 SMA5114 SMA5117 SMA5118 SMA5125 SMA5127 SMA6010 SMA6014 SMA6511 SMA6512 STA301A STA302A STA302A STA303A STA303A STA304A STA305A STA308A STA312A STA322A STA371A STA401A STA402A STA403A STA404A STA406A STA408A STA412A STA413A STA421A STA431A STA434A STA435A STA457C STA458C STA460C STA471A STA472A STA473A STA475A STA481A STA485A STA501A STA504A STA505A STA506A

Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) 3–phase motor driver 3 60 10 Sink driver 5 150 ±7/±7 Sink driver 5 60 5 Source driver 5 –60 –5 Sink driver 5 150 ±5/±7 3–phase motor driver 6 ±60 ±4 2000 3–phase motor driver 6 ±100 ±5 2000 3–phase motor driver 6 ±80 ±5 2000 3–phase motor driver 6 ±60 ±6 2000 3–phase motor driver 6 ±60 ±8 2000 3–phase motor driver 6 ±60 ±10 2000 H–bridge 4 ±60 ±12 50 Source driver 4 –60 –4 2000 Source driver 4 –60 –3 2000 Sink driver 4 100 3 2000 Sink driver 4 100 3 2000 Sink driver 4 100 2 2000 Sink driver 4 100 4 Sink driver 4 100 4 H–bridge driver 4 ±60 +5/–4 3–phase motor driver 6 ±60 +5/–4 Sink driver 4 100 5 Sink driver 4 100 4 3–phase motor driver 6 250 7 Sink driver 4 60 3 3–phase motor driver 6 250 7 3–phase motor driver 6 500 ±5 3–phase motor driver 6 ±60 ±10 3–phase motor driver 6 ±60 ±4 3–phase motor driver 6 ±60 ±4 2000 3–phase motor driver 6 ±60 ±2 1500/2000 Stepper motor driverr with 5 100±15/–60 1.5/–3 2000 Dual Supply Voltage Switch Stepper motor driverr with 5 60±10/–60 1.5/–3 2000 Dual Supply Voltage Switch Sink driver 3 60±10 4 1000 Source driver 3 –50 –4 1000 3–phase motor driver 3 –50 –4 1000 Sink driver 3 100 4 1000 3–phase motor driver 3 100 4 1000 3–phase motor driver 3 550 1 200 3–phase motor driver 3 –550 –1 200 Source driver 3 –120 –4 2000 Sink driver 3 60 3 300 Source driver 3 –50 –3 100 Sink driver 3 60±10 2 2000 Sink driver 4 60±10 4 1000 Source driver 4 –50 –4 1000 Sink driver 4 100 4 1000 Sink driver 4 200 3 1000 Sink driver 4 60±10 6 2000 Source driver 4 –120 –4 2000 Sink driver 4 60 3 300 Sink driver 4 35±5 3 500 Source driver 4 –60 –3 40 H–bridge driver 4 ±60 ±3 40 H–bridge driver 4 ±60 ±4 1000 Sink driver 4 65±15 4 1000 H–bridge driver 4 ±60 ±4 2000 H–bridge driver 4 ±30 ±5 40 Sink driver 2 60±10 6 700 Sink driver 4 60±10 2 2000 Source driver 4 –60 –2 2000 Sink driver 4 100 2 2000 Sink driver 4 100±15 2 2000 Sink driver 4 60±10 1 2000 Sink driver 4 100±15 1 2000 Sink driver 4 60 5 Sink driver 4 60 4 Sink driver 4 100 3 Sink driver 4 100 2

RDS (ON) max (Ω) 0.14 0.105/0.2 0.22 0.22 0.44/0.2

0.6 0.6 0.22/0.55 0.22/0.55 0.3 0.55 0.5 0.25 0.25 1.4 0.14 0.55

Package SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin SIP 12-pin

0.2 0.45 0.6 0.8

Page 100 102 104 105 106 108 110 112 114 116 118 120 122 123 124 125 126 127 128 130 132 134 135 136 137 138 139 140 142 144 146 148

SIP 12-pin

150

SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 8-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin

152 153 153 154 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 172 174 176 178 180 181 182 183 184 185 186 187 188 189 190

3

Product index by function

Sink driver

●With built-in avalanche diode between collector and base Part Number Number of chips STA460C 2 STA371A 3 STA301A 3 SDC06 4 STA413A 4 STA481A 4 SDC03 4 STA471A 4 STA401A 4 SLA4010 4 STA406A 4 STA435A 4 STA485A 4 SDC04 4 STA475A 4

VCEO (V) 60±10 60±10 60±10 30 to 45 35±5 60±10 60±10 60±10 60±10 60±10 60±10 65±15 100±15 100±15 100±15

IC (A) 6 2 4 2 3 1 1.5 2 4 4 6 4 1 1.5 2

hFE (min) RDS (ON) max (Ω) Equivalent circuit 700 1 2000 2 1000 2 400 3 500 4 2000 5 2000 6 2000 5 1000 5 2000 6 2000 5 1000 7 2000 5 2000 6 2000 5

Package SIP 10-pin SIP 8-pin SIP 8-pin SMD 16-pin SIP 10-pin SIP 10-pin SMD 16-pin SIP 10-pin SIP 10-pin SIP 12-pin with fin SIP 10-pin SIP 10-pin SIP 10-pin SMD 16-pin SIP 10-pin

Page 180 160 152 196 168 185 194 181 161 18 165 174 186 195 184

hFE (min)

RDS (ON) max (Ω) Equivalent circuit 0.24 8 0.25 9 0.3 10 11 12 12 0.6 10 0.6 10 0.55 10 0.3 10 0.3 10 12 12 12 0.9 10

Package SMD 16-pin SIP 12-pin SIP 12-pin with fin SMD 16-pin SIP 12-pin SIP 12-pin SIP 12-pin with fin SIP 12-pin SIP 12-pin SIP 12-pin with fin SIP 12-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin

Page 202 137 66 198 126 125 68 128 135 35 134 20 23 21 36

hFE (min) RDS (ON) max (Ω) Equivalent circuit 300 13 100 14 1000 15 300 16 0.45 17 0.2 18 2000 19 0.8 18 0.8 20 2000 21 0.6 18 1000 19 2000 21 0.6 20 0.3 20 0.08 20 2000 21 0.085 20 0.115 20 1000 19 0.175 20 0.25 20 0.45 22 0.22 22 0.22 22 0.19 22 0.185 22 0.44/0.2 22 0.44/0.2 22 0.2 22 0.105/0.2 22 0.35 22 0.5 22 0.105/0.44/0.2 23 0.105/0.2 23 0.175/0.35 23

Package SIP 8-pin SIP 8-pin SMD 16-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SIP 10-pin SMD 16-pin SIP 12-pin SIP 10-pin SIP 10-pin SIP 12-pin with fin SIP 12-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 10-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin

Page 158 154 193 167 188 187 183 190 203 124 189 163 19 127 34 67 22 73 75 164 69 71 65 48 104 58 70 78 106 81 102 72 74 76 92 80

●With built-in flywheel diode Part Number Number of chips VCEO • VDSS (V) IC • ID (A) SDK02 4 60 2 SMA5114 4 60 3 SLA5031 4 60 5 SDH02 4 100 1.5 SMA4033 4 100 2 SMA4032 4 100 3 SLA5040 4 100 4 SMA5102 4 100 4 SMA5106 4 100 4 SLA5002 4 100 5 SMA5105 4 100 5 SLA4031 4 120 4 SLA4061 4 120 5 SLA4041 4 200 3 SLA5003 4 200 5

2000 2000 2000

2000 2000 1000

●General purpose Part Number Number of chips VCEO • VDSS (V) IC • ID (A) STA312A 3 60 3 STA303A 3 100 4 SDC01 4 50 2 STA412A 4 60 3 STA504A 4 60 4 STA501A 4 60 5 STA473A 4 100 2 STA506A 4 100 2 SDK04 4 100 2 SMA4030 4 100 3 STA505A 4 100 3 STA403A 4 100 4 SLA4030 4 100 4 SMA5101 4 100 4 SLA5001 4 100 5 SLA5037 4 100 10 SLA4060 4 120 5 SLA5047 4 150 10 SLA5052 4 150 10 STA404A 4 200 3 SLA5041 4 200 10 SLA5044 4 250 10 SLA5029 5 60 4 SLA5011 5 60 5 SLA5085 5 60 5 SLA5021 5 100 5 SLA5042 5 100 5 SLA5055 5 150 ±5/±7 SLA5088 5 150 ±5/±7 SLA5058 5 150 ±7 SLA5081 5 150 ±7/±7 SLA5046 5 200 7 SLA5049 5 250 7 SLA5054 6 150 ±7/±5/±7 SLA5070 6 150 ±7/±7 SLA5057 6 200 ±7/±7

4

●Equivalent circuit (Sink driver) 1

9

G 2

1

3

5

4

8

6

10

9

11

12

7

2

0

H

3

A

I

4

B

J

5

C

K

6

D

L

7

E

M

8

F

5

Product index by function Source driver ●With built-in flywheel diode Part Number Number of chips VCEO • VDSS (V) IC • ID (A) SMA4021 4 –60 –3 SLA4071 4 –100 –5 SLA5006 4 –100 –5

hFE (min) RDS (ON) max (Ω) Equivalent circuit Package 2000 1 SIP 12-pin 2000 1 SIP 12-pin with fin 0.7 2 SIP 12-pin with fin

Page 123 25 39

hFE (min) RDS (ON) max (Ω) Equivalent circuit 100 3 1000 4 2000 4 1000 5 2000 6 2000 5 40 7 2000 6 0.55 8 0.3 8 1000 6 0.7 8 2000 9 0.55 10 0.3 10 0.22 10

Page 159 153 157 162 191 182 169 122 64 37 24 38 166 52 49 105

●General purpose Part Number Number of chips VCEO • VDSS (V) IC • ID (A) STA322A 3 –50 –3 STA302A 3 –50 –4 STA308A 3 –120 –4 STA402A 4 –50 –4 SDA01 4 –60 –1.5 STA472A 4 –60 –2 STA421A 4 –60 –3 SMA4020 4 –60 –4 SLA5024 4 –60 –4 SLA5004 4 –60 –5 SLA4070 4 –100 –5 SLA5005 4 –100 –5 STA408A 4 –120 –4 SLA5015 5 –60 –4 SLA5012 5 –60 –5 SLA5086 5 –60 –5

6

Package SIP 8-pin SIP 8-pin SIP 8-pin SIP 10-pin SMD 16-pin SIP 10-pin SIP 10-pin SIP 12-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 10-Pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin

●Equivalent circuit (Source driver) 1

6

2

7

3

8

4

9

5

0

7

Product index by function Motor driver ●H-bridge driver Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit STA458C 4 ±30 ±5 40 1 STA431A 4 ±60 ±3 40 2 STA434A 4 ±60 ±4 1000 3 STA457C 4 ±60 ±4 2000 4 SLA4310 4 ±60 ±4 80 5 SLA4340 4 ±60 ±4 2000 3 SLA5007 4 ±60 +5/–4 0.22/0.55 6 SLA5018 4 ±60 +5/–4 0.22/0.55 6 SMA5103 4 ±60 +5/–4 0.22/0.55 6 SLA8001 4 ±60 ±12 50 1 SDH03 4 ±100/–60 ±1.5 2000 7 SLA5008 4 ±100 +4/–3 0.6/1.3 6 SLA4390 4 ±100 ±5 2000 3 SLA4391 4 ±100 ±5 1000 8 SLA5013 4 ±100 ±5 0.3/0.7 6

Package SIP 10-pin SIP 10-pin SIP 10Pin SIP 10-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin SIP 12-pin with fin SMD 16-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin

Page 178 170 172 176 26 28 40 56 130 120 200 42 30 32 50

Package SMD 16-pin SIP 12-pin with fin SIP 8-pin SIP 8-pin SIP 8-pin SMD 16-pin SIP 12-pin with fin SIP 8-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin SIP 12-pin SIP 12-pin with fin SIP 12-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 12-pin with fin SIP 15-pin with fin SIP 12-pin SIP 12-pin SIP 15-pin with fin SIP 12-pin

Page 197 100 154 155 153 192 99 156 82 84 86 88 146 144 108 142 44 54 132 60 114 116 118 140 112 46 110 62 94 136 138 97 139

●3-phase motor driver Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit SDC07 3 60 4 2000 9 SLA5080 3 60 10 0.14 10 STA303A 3 100 4 1000 11 STA304A 3 550 1 200 12 STA302A 3 –50 –4 1000 13 SDA05 3 –60 –4 2000 14 SLA5079 3 –60 –10 0.14 15 STA305A 3 –550 –1 200 16 SLA5059 6 60 ±4 0.55 17 SLA5060 6 60 ±6 0.22 17 SLA5061 6 60 ±10 0.14 17 SLA5064 6 60 ±10 0.14 18 SMA6014 6 ±60 ±2 1500/2000 19 SMA6010 6 ±60 ±4 2000 20 SLA6012 6 ±60 ±4 2000 19 SMA5127 6 ±60 ±4 0.55 21 SLA5009 6 ±60 +5/–4 0.22/0.55 21 SLA5017 6 ±60 +5/–4 0.22/0.55 21 SMA5104 6 ±60 +5/–4 0.22/0.55 21 SLA5022 6 ±60 ±6 2000 0.22 22 SLA6023 6 ±60 ±6 2000 19 SLA6024 6 ±60 ±8 2000 19 SLA6026 6 ±60 ±10 2000 19 SMA5125 6 ±60 ±10 0.14 18 SLA6022 6 ±80 ±5 2000 19 SLA5010 6 ±100 +4/–3 0.6/1.3 21 SLA6020 6 ±100 ±5 2000 20 SLA5023 6 ±100 ±6 2000 0.55 22 SLA5072 6 250 7 0.5 23 SMA5112 6 250 7 0.5 24 SMA5117 6 250 7 0.25 24 SLA5075 6 500 ±5 1.4 23 SMA5118 6 500 ±5 1.4 24

●Stepper motor driver with dual supply voltage switch Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package SMA6511 5 100±15/–60 1.5/–3 2000 25 SIP 12-pin SMA6512 5 60±10/–60 1.5/–3 2000 25 SIP 12-pin

Page 148 150

●5-phase motor driver Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit SLA5074 4 60 5 0.3 26 SLA5065 4 60 7 0.1 26 SLA5073 6 60 5 0.3 27 SLA5068 6 60 7 0.1 28

8

Package SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin SIP 15-pin with fin

Page 96 90 95 91

●Equivalent circuit (Motor driver) 1

2

0

J

A

K

B

L

C

M

D

N

E

O

F

P

G

Q

H

R

3

4

5

6

7

8

9

I

9

Product index by applications Product type Application

Transistor

Typical circuit example

Darlington

Single

●Solenoid

STA301A

●Relay

STA371A

STA413A

STA401A

SDC06

MOSFET

STA460C

STA406A STA435A STA471A STA475A STA481A STA485A STA4010 SDC04 SDC03 SLA4031

SLA5002

SLA4041

SLA5003

SLA4060

SLA5031

SMA4032

SLA5040

SMA4033

SMA5102

SDH02

SMA5105 SMA5106 SMA5114 SDK02

SLA4071

SLA5006

SMA4021

STA302A

STA322A

SLA5004

STA308A

STA421A

SLA5005

STA402A STA408A STA472A SLA4070 SMA4020 SDA01

10

SLA5024

Product type Application

Transistor

Typical circuit example

Darlington ●DC motor Forward-reverse control

Single

STA434A

STA431A

STA457C

STA458C

SLA4340

SLA4310

STA4390

SLA8001

MOSFET

SDH03

PWM control

SLA4391

SLA5007 SLA5008 SLA5013 SLA5018 SMA5103

●3-phase DC brushless motor

STA302A+STA303A SMA6010 SLA6020 SDA05+SDC07

SLA5072

100V AC direct drive 200V AC direct drive

SLA5075 SMA5112 SMA5117 SMA5118

200V AC direct drive

PWM control

STA304A+STA305A

SLA6012 SLA6022 SLA6023 SLA6024 SLA6026 SMA6014 SLA5022 SLA5023

SLA5009 SLA5010 SLA5017 SLA5059 SLA5060 SLA5061 SLA5064 SLA5079+SLA5080 SMA5104 SMA5125 SMA5127

11

Product index by applications Product type Application

Transistor

Typical circuit example

Darlington ●Stepper motor

Constant voltage drive

Dual supply voltage drive

Bipolar drive

Single

STA401A STA406A STA435A STA471A STA475A STA481A STA485A SLA4010 SDC04 SDC03 SMA6511 SMA6512

STA460C STA413A SDC06

STA473A STA472A STA408A STA404A STA403A STA402A SMA4030 SMA4020 SLA4070 SLA4060 SLA4030 SDA01

STA421A STA412A SDC01

MOSFET

STA506A STA505A STA504A STA501A SMA5101 SLA5024 SLA5005 SLA5004 SLA5001

Product type Application

Typical circuit example

●5-phase motor

N–CH

P–CH

SLA5011

SLA5012

SLA5029

SLA5015

SLA5065+SLA5068

SLA5086

SLA5073+SLA5074 SLA5085

Application ●"S" shape correction switch

12

Typical circuit example

Product type 100V SLA5021 SLA5037 SLA5042

150V

200V

250V

SLA5047 SLA5052 SLA5054 SLA5055 SLA5058 SLA5070 SLA5077 SLA5081 SLA5088

SLA5041 SLA5046 SLA5057

SLA5044 SLA5049

Storage, characteristic inspection, and handling precautions Inappropriate storage, characteristic inspection, or handling may impair the reliability of the device. To ensure high reliability, observe the following precautions:

1. Storage precautions ● It is recommended to store the device at room temperature (between 5 and 35°C) and relative humidity of 40 to 75%. Avoid storing the device in a place where the temperature or humidity is high or changes greatly. ● Store the device in a clean place that is not exposed to direct sunlight, and is free from corrosive or harmful gases. ● If the device is stored for a long time, check the solderability and lead condition before using the device.

2. Precautions on characteristic inspections When carrying out characteristic inspections on receiving products or other occasions, take care to avoid applying a surge voltage from the measuring equipment and check the terminals of the measuring equipment for a short circuit or wiring errors. Measure the device within the range of its rated values.

3. Silicone Grease When attaching a heatsink, apply a small amount of silicone evenly to the back of the device and both sides of the insulator to reduce the thermal resistance between the device and heatsink. Recommended silicone grease ●G746

SHINETSU SILICONE CO., LTD.

●YG6260

GE TOSHIBA SILICONE CO., LTD.

●SC102

DOW CORNING TORAY SILICONE CO., LTD.

5. Soldering temperature If soldering is necessary, take care to keep the application of heat as brief as possible, and within the following limits: 260±5°C for 10 s max 350°C for 3 s max (soldering iron)

6. Heatsink A large contact area between the device and the heatsink for effective heat radiation is required. To ensure a large contact area, minimize mounting holes and select a heatsink with a sufficiently smooth surface and that is free from burring or metal debris.

7. Handling precautions to protect power MOSFET arrays from static damage ● When handling the device, physical grounding is necessary. Wear a wrist strap with a 1 MΩ resistor close to the body in the wrist strap to prevent electric shock. ● Use a conductive tablemat or floor mat at the device handling workbench and to ensure grounding. ● When using a curve tracer or other measuring equipment, ground the equipment as well. ● When soldering, ground the bit of the soldering iron and the dip tank to prevent a leakage voltage from damaging the device. ● Store the device in the shipping container or a conductive container or use aluminum foil to protect the device from static electricity.

Please select a silicone grease carefully since the oil in some grease can penetrate the product, which will result in an extremely short product life.

4. Screw tightening torque If screws are not tightened with sufficient torque, this can increase the thermal resistance and reduce the radiation effect. Tightening screws with too great a torque damage the screw thread, deform the heatsink, or twist the device frame until it is damaged. Therefore, tighten screws with a torque between 0.588 and 0.784 N • m (6 to 8 kgf • cm).

13

Sanken MOSFETs feature guaranteed avalanche energy capability.

Avalanche energy capability of MOSFET array 1. What is avalanche energy capability ? When a MOSFET is used for high-speed switching, the inductive load and wiring inductance may cause a counter electromotive voltage at cutoff that the device cannot withstand. Avalanche energy capability is the non-clamped ability to withstand damage expressed as energy. As long as the energy applied to the device at cutoff is within the guaranteed avalanche energy capability, the device will not be damaged even if the drain-source voltage exceeds the capability. For example, a drain-source voltage that is within the guaranteed capability when electrically stationary may exceed the limit at startup or cutoff. Usually, a snubber circuit or similar surge absorbing circuit is used to keep the drain-source voltage within the guaranteed capability. Sanken MOSFETs, however, do not require this kind of protective circuit because the avalanche energy capability is guaranteed. Sanken MOSFETs enable the number of parts to be reduced, saving board area.

3. Temperature derating for EAS The EAS value in the specifications is guaranteed when the channel temperature Tch is 25°C. Since the EAS value drops as the channel temperature rises, derating depending on the temperature is necessary. Fig. B shows the derating curve for single avalanche energy capability. This is the derating curve of EAS and the channel temperature (Tch (start)) immediately before the avalanche occurs in the product, with the EAS value (maximum rating) at 25°C as 100%. For example, if the product temperature is 50°C, the EAS value is derated to 64% of the value at 25°C.

Fig. B EAS – Tch (start) ILp = ID max

100

2. EAS calculation method If the current in an inductive load L is ILP at the moment when the MOSFET is cut off, EAS can be expressed as follows: VDSS .......................................1 EAS = 1 • L • ILP2 • VDSS – VDD 2 *VDD : Supply voltage

EAS = PS • t .....................................................................2 *PS : Surge power *t : Surge time The following calculation is used to determine EAS where the voltage and current shown in Fig. A are applied to the MOSFET in a circuit Integrate the overlapping section of ID and VDS to calculate ID • VDS • dt. When the ID waveform is triangular, EAS will be as follows: 1 EAS = • 10(A) • 550(V) • 10(µs) = 27.5(mJ) 2

∫

10A 550V (VDSS) 0

ID 550V (VDSS) VDS

0 10 µ s

14

60 40 20 0 25

50

75

100

125

150

Tch (start) (°C)

4. Continuous avalanche energy capability

If the value of L is not known in an actual circuit, EAS can also be calculated from the actual voltage and current waveforms as follows:

Fig. A

EAS(normalized) (%)

80

* Consult the engineering department of Sanken when planning to use MOSFETs in avalanche mode.

This section explains the derating method for continuous avalanche. Considering continuous avalanche as the repetition of a single avalanche, the safe operating area (SOA) is determined using the derating curve shown in Fig. B. Calculate the energy and Tch (start) of avalanche in the worst condition and determine SOA using the calculated data and the derating curve shown in Fig. B. The temperature rise due to avalanche should not cause the channel temperature to exceed the maximum rating. The following is an example of determining SOA judgment by calculation when a MOSFET enters a transient avalanche state at power-on then changes to a stationary state Supposing that the waveform is as shown in Fig. C until the MOSFET changes to the stationary state, calculate the start loss and switching (turn-on/off) loss. To simplify the calculation, the average loss Pa and the last two waveforms are used for approximation. (Fig. D) First, calculate the channel temperature Tch (τ) at time (τ) where the temperature condition is severest. If the Tch (τ) value is within the maximum rating, there is no problem as far as the temperature is concerned.

Tch(τ) = Ta + Pa • rch–c (Tn + T + t1 + t2 + t3) + (P1 – Pa) • rch–c (T + t1 + t2 + t3) – (P1 – P2) • rch–c (T + t2 + t3) + (P3 – P2) • rch–c (T + t3) – P3 • rch–c (T) + P4 • rch–c (t4 + t5 + t6) – (P4 – P5) • rch–c (t5 + t6) + (P6 – P5) • rch–c (t6)................................................3 *Ta : Ambient temperature *rch-c (t) : Transient thermal resistance at pulse width t

5. Avalanche energy capability measuring method Fig. E L IL VDS RG

VGS

VDD

0V (a) Measuring circuit

Then calculate the channel temperature Tch (τl) immediately before avalanche. Tch(τ) = Ta + Pa • rch–c (Tn + T’ + t1 + t2 + t3) + (P1 – Pa) • rch–c (T’ + t1 + t2 + t3) – (P1 – P2) • rch–c (T’ + t2 + t3) + (P3 – P2) • rch–c (T’ + t3) – P3 • rch–c (T’) + P4 • rch–c (t4 + t5 + t6) – (P4 – P5) • rch–c (t5 + t6) + (P6 – P5) • rch–c (t6)................................................4

V(BR)DSS EAS = 1 • L • ILp2 • V(BR)DSS – VDD 2 ILp IL

V(BR)DSS VDS VDD

(b) Output waveform

This Tch (τ) value becomes Tch (start). If the avalanche energy (EAS = P6 • t6) is within the value derated from the guaranteed EAS value at the temperature, there is no problem as far as the avalanche energy is concerned.

Fig. C

Transient

Stationary

VDS ID T(n) Avalanche in this section

Fig. D P3 P1 Pa

P6 P4

P2

P5

0 T(n)

t1 t2

t3

t4 t5 T T'

t6 τ1 τ

15

Transistor array with built-in avalanche diode

SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A, 460C, 471A, 475A, 481A, 485A, SDC03, 04, 0 6

The Darlington transistor chip with a built-in avalanche diode is a planar type monolithic Darlington transistor chip having the equivalent circuit shown in the figure on the right. Surge Voltage can be absorbed by the avalanche diode provided between the collector and the base. This eliminated the need for extra components for absorbing surge caused by counter electromotive force produced by inductive load switch circuits. These Darlington transistor arrays are ideal for relay drive, solenoid drive, and printer wire drive applications.

Switching time measurement 1. Transistor array

2. MOS FET array

Fig. 1 PNP

Fig. 3 Nch (a) Measuring circuit

(a) Measuring circuit

RL

+VBB2 0

20 µ s

IC

R2

ID VDS

–VCC

RG

D.U.T

50 µ s

0

VDD

VGS

IB2

0V

IB1 R1 –VBB1

P.W.=10 µ s Duty cycle≤1%

RL

GND

0

(b) Input-output waveform (b) Input-output waveform

90%

IB2

VGS

Base current 0

0

IB1

10% 90%

Collector current 0.1IC

0

IC

VDS 10%

0.9IC ton

td(on) tr ton

tstg tf

Fig. 2 NPN

td(off) tr toff

Fig. 4 Pch (a) Measuring circuit

(a) Measuring circuit

+VBB1 0

50 µ s

RL

IC

R1

ID VDS

VCC

IB1

VDD

0V

D.U.T

RG

IB2

VGS

R2

0

P.W.=10 µ s Duty cycle≤1%

20 µ s –VBB2

RL

GND

0 (b) Input-output waveform

(b) Input-output waveform IB2

Base 0 current

90%

IB1

0

10%

Collector 0.9IC current 0.1IC

IC

0

VDS 90%

ton

16

10% VGS

tstg tf

td(on) tr ton

td(off) tr toff

External dimensions

(unit: mm)

A SLA (12-pin)

C STA (8-pin) 20.4 max

31.5max

13.0±0.2

× 3.8

4.8±0.2

11.3±0.2 2.5 max

1.7±0.1

4.7±0.5

a b

1.0±0.25 Pin1

12 +0.2

1.45±0.15

1.2±0.2

+0.2

0.85–0.1 1.2±0.15

0.5±0.15

(2.54)

7 × P2.54=17.78 2.2±0.7

0.55–0.1

C1.5±0.5

4.0±0.2

11 × P2.54±0.7 = 27.94±1.0

0.5±0.15

2.7

16.0±0.2 9.5min

Ellipse3.2±0.15

24.4±0.2

9.0±0.2

31.0±0.2

φ 3.2±0.15

a. Part No. b. Lot No.

1

Weight : Approx. 6.0g

2

3

4

5

6

7

8

Pin No.

Weight : Approx. 2.0g

SLA (15-pin)

STA (10-pin)

31.3±0.2

25.25±0.2

φ 3.2±0.15× 3.8

4.8±0.2

(2.54)

0.5±0.15 9 × 2.54 = 22.86±0.25

0.5±0.15

+1.0

(3.0) 6.7±0.5

a

1.0±0.25

+0.2

+0.2

C1.5±0.5

0.55–0.1

1.15–0.1

9.0±0.2

11.3±0.2

+0.2

0.65–0.1

b

4.7±0.5

16.0±0.2

13.0±0.2

9.9±0.2

2.45±0.2

R-End

2.3±0.2

1.7±0.1

16.4±0.2

4.0±0.7

14 × P2.03±0.7=28.42±1.0

1

2

3

4

5

6

7

8

4.0±0.2

24.4±0.2

1.2±0.2

31.0±0.2

9.7–0.5

φ 3.2±0.15

9 10

a. Part No. b. Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Weight : Approx. 2.6g

Weight : Approx. 6.0g

D SD

B SMA

0.89±0.15 31.0±0.2

2.54±0.25

+0.15

4.0±0.2

0.75–0.05

9 16

6.8max

b a

a b

1

2.4

10.2±0.2

2.5±0.2

8.0±0.5

27.94

+0.2

0.55–0.1

1.2±0.1

0~0.1 1.0±0.3

3.0±0.2

4.0max 3.6±0.2 1.4±0.2

0.25

+0.15 0.3–0.05

(10.4)

+0.2

0.85–0.1

2.54

8

19.56±0.2

6.3±0.2 1.46±0.15

20.0max

9.8±0.3

a. Part No. b. Lot No.

a. Part No. b. Lot No.

Weight : Approx. 4.0g

Weight : Approx. 1.05g

17

SLA4010 Absolute maximum ratings

NPN Darlington With built-in avalanche diode

SLA (12-pin)

(Ta=25°C)

Specification min typ max

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

4

A

hFE

2000

ICP

6 (PW≤10ms, Du≤50%)

A

VCE(sat)

IB

0.5

A

5 (Ta=25°C)

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions A

60

unit

Conditions

10

µA

VCB=50V

10

mA

VEB=6V

70

V

IC=10mA VCE=4V, IC=3A

1.5

V

IC=3A, IB=10mA

W

40 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 3

6

7

4

1 R1

8

10 11

R2

2

5

9

12

R1: 3kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 5

hFE-IC Characteristics (Typical)

IB=

m 2.0

(VCE=4V)

20000

A

10000

10000

1.0mA

4

typ

5000

0.8mA

5000 Ta

0.6mA

3

0.4mA

2

°C 25 =1

hFE

0.5mA

hFE

IC (A)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

20000

1000

°C 25 C 0° –3

1000

500 500

1

0.3mA

100

100 0

0

1

2

3

50 0.05

4

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

50 0.05

4

0.1

0.5

1

4

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

2

0.5

0.1

3

(VCE=–4V)

4

1

Ta=

IC=1A

0 0.1

0.5

1

0 0.2

4

0

0.5

1

5

10

50

100

0

θ j-a-PW Characteristics

PT-Ta Characteristics 10

IC (A)

k

tsin

50 ×

Without Heatsink

50×

10

0×

=2 5° C

1

ea

PT (W)

eH

init

0×

10 1.0

s 0m

Inf

10

s

10

D. C. TC

ith

20

1m

5

W

5

ms

10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

30

2

Safe Operating Area (SOA)

40

10

θ j–a (°C / W)

1

VBE (V)

IB (mA)

IC (A)

20

–30°C

1

2

25°C

125°C

IC=4A IC=3A

IC=2A

125 °C

25°C

75°C

Ta=–30°C

1

IC (A)

VCE (sat) (V)

VCE (sat) (V)

3

2

0.5

2 Single Pulse

2m m

0.1 Without Heatsink Ta=25°C

0.5 1

5

10

50 100

PW (mS)

18

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05 3

5

10

50

VCE (V)

100

SLA4030 Absolute maximum ratings

NPN Darlington General purpose

External dimensions A

(Ta=25°C)

Specification min typ max

Ratings

Unit

Symbol

VCBO

120

V

ICBO

VCEO

100

V

IEBO

VEBO

6

V

VCEO

100

IC

4

A

hFE

2000

ICP

6 (PW≤1ms, Du≤50%)

A

VCE(sat)

IB

0.5

A

5 (Ta=25°C)

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

Unit

Conditions

10

µA

VCB=120V

10

mA

VEB=6V

V

IC=10mA VCE=4V, IC=2A

1.5

V

IC=2A, IB=10mA

W

25 (Tc=25°C)

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j-c

5

°C/W

■Equivalent circuit diagram 2 5

1

R1

9

4 8

11 12

R2

3 6 R1: 3kΩ typ R2: 500Ω typ

7

10

Characteristic curves IC-VCE Characteristics (Typical) 0.8mA

A

IB

hFE-IC Characteristics (Typical)

m =1

hFE-IC Temperature Characteristics (Typical)

(VCE=2V)

20000 10000

10000

0.6mA

typ

0.5mA

3

(VCE=2V)

20000

5000

5000

1000

1000

°C 25 °C 75 °C 25 C 0° –3

2

500

0.3mA

1

1

2

4

3

5

100

100

50

50

20 0.02

6

0.05

VCE(sat)-IC Temperature Characteristics (Typical)

1

1

4

(VCE=2V)

4

2 IC=4A

2

IC=2A

1

0 0.1

5

IC (A)

0.5

1

1

5

10

0 0

50

1

θ j-a-PW Characteristics

PT-Ta Characteristics 10

s 0µ 10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

5 s 1m

20

10

IC (A)

k

×50

Without Heatsink

0× 2

tsin

50

0× 10

ea eH

10

5

1

init

PT (W)

Inf

15

10

1

ms

ith W

5

3

Safe Operating Area (SOA)

25

10

2

VBE (V)

IB (mA)

20

θ j–a (°C / W)

1

IC-VBE Temperature Characteristics (Typical)

3

IC=1A

0.5

0.5

0.1

VCE(sat)-IB Characteristics (Typical)

VCE (sat) (V)

C 0° –3

0 0.3

0.05

IC (A)

25°C

75°C

25°C

20 0.02

4

3

T a= 1

VCE (sat) (V)

2

1

IC (A)

(IC / IB=500)

3

0.5

0.1

VCE (V)

Ta= 125 °C 75°C 25°C

0

500

IC (A)

0

hFE

=1 Ta

hFE

IC (A)

0.4mA

–30°C

4

0.5

×2 0.1 Single Pulse

0.05 Without Heatsink 0.5

1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

0.03 3

Ta=25°C

5

10

50

100

200

VCE (V)

19

SLA4031 Absolute maximum ratings

NPN Darlington With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

120 120 6 4 6 (PW≤1ms, Du≤50%) 0.5 4 (PW≤0.5ms, Du≤25%) 6 (PW≤10ms, Single) 120 5 (Ta=25°C) 25 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5

V V V A A A A A V

ICBO IEBO VCEO hFE VCE (sat) VBE (sat) ton tstg tf

VISO Tj Tstg θ j-c

Unit

Conditions

µA mA V

VCB=120V VEB=6V IC=25mA VCE=2V, IC=2A

V V µs µs µs

IC=2A, IB=2mA VCC 40V, IC=2A, IB1=–IB2=10mA

Specification min typ max

Symbol

Vrms °C °C °C/W

VR VF IR trr

120 1.2 10 100

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

12

8

5

1

(Ta=25°C)

Specification min typ max 10 10 120 2000 5000 15000 1.0 1.5 1.6 2.0 0.6 5.0 2.0

10 11

9

4

3

SLA (12-pin)

●Diode for flyback voltage absorption

W

■Equivalent circuit diagram 2

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions A

R1 R2

R1: 3kΩ typ R2: 500Ω typ

7

6

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical) (VCE=2V)

20000 A 0.8m

A 1m IB=

typ

0.5mA

3

(VCE=2V)

20000 10000

10000

0.6mA

hFE-IC Temperature Characteristics (Typical)

5000

5000

1000

1000

25

2

500

0.3mA

1

0

1

2

3

4

100

100

50

50

20 0.02

5

0.05

0.05

1

1

2 IC=4A

2

IC=2A IC=1A

1

0 0.1

5

0.5

IC (A)

1

5

10

0

50

Ta= 125 ° 75°C C 25°C

0

1

IB (mA)

θ j-a-PW Characteristics

10 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

µs

0 10

5 s 1m

20

ms 10

W ith

15

Inf

Without Heatsink

k

5

tsin

50×

1

1

0.5

ea

10

eH

10 0× 10 0× 2

IC (A)

init

PT (W)

5

3

Safe Operating Area (SOA)

25

10

2

VBE (V)

PT-Ta Characteristics

20

θ j–a (°C / W)

4

(VCE=2V)

4

1

0.5

1

0.5

IC-VBE Temperature Characteristics (Typical)

3

VCE (sat) (V)

C 0° –3

0 0.3

0.1

VCE(sat)-IB Characteristics (Typical)

25°C

75°C

25°C

20 0.02

3

Ta=1

VCE (sat) (V)

2

4

°C 75 °C 25 C 0° –3

IC (A)

(IC / IB=500)

3

1

°C

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

0.5

0.1

=1

500

IC (A)

0

hFE

Ta

hFE

IC (A)

0.4mA

–30°C

4

50×

2

0.1 Single Pulse

0.05 Without Heatsink

0.5

1

5

10

50 100

PW (mS)

20

500 1000

0 –40

0

50

Ta (°C)

100

150

0.03 3

Ta=25°C

5

10

50

VCE (V)

100

200

SLA4041 Absolute maximum ratings

NPN Darlington With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

200 200 6 3 6 (PW≤10ms, Du≤50%) 0.2 3 (PW≤0.5ms, Du≤25%) 6 (PW≤10ms, single) 200 5 (Ta=25°C) 25 (Tc=25°C) 150 –40 to +150

V V V A A A A A V

ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC

Tj Tstg

Unit

Conditions

µA mA V

VCB=200V VEB=6V IC=10mA VCE=4V, IC=1.5A

V V V

IC=1.5A, IB=3mA IFEC=2.0A

Specification min typ max 200 1.6 10 100

Symbol W

VR VF IR trr

°C °C

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=200V IF=±100mA

12

8

5

1

(Ta=25°C)

Specification min typ max 10 10 200 1000 6000 15000 1.1 1.5 1.7 2.0 1.5

10 11

9

4

3

SLA (12-pin)

●Diode for flyback voltage absorption

■Equivalent circuit diagram 2

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions A

R1 R2

7

6 R1: 2kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

6

A

A

1000

1000

500

500

3mA

hFE

3

hFE

A 10m

Ta =1 25 °C 75 °C

IB=2

30m

4

IC (A)

(VCE=4V)

5000

mA 100

00m

5

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

5000

25

°C 0°

C

–3 1mA

2

100

100

50

50

1 0 0

1

2

3

4

5

30 0.03 0.05 0.1

6

0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

30 0.03 0.05

56

0.1

0.5

56

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=100)

3

1

IC (A)

3

(VCE=4V)

6

4

IC=3A IC=1.5A

1

3

2 7 5 Ta= 12 °C 5° 25 C °C –30 °C

1

2

IC (A)

2

VCE (sat) (V)

°C 75°C 25°C –30°C

Ta=125

VCE (sat) (V)

5

IC=1A

1

0 0.2

0.5

1

0 0.5

5 6

1

5

10

50

0 0

100 200

1

IB (mA)

IC (A)

θ j-a-PW Characteristics

PT-Ta Characteristics 10

10

5

S

W

S m

10

20

0µ

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

S 1m

10

3

Safe Operating Area (SOA)

25

20

2

VBE (V)

Inf

15

IC (A)

k

Without Heatsink

10 0×

tsin

5

ea

10 0×

10

1

1

eH

PT (W)

init

θ j–a (°C / W)

ith

5

0.5

2

50 ×50 ×2

0.1 0.05

0.5 1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

Single Pulse Without Heatsink

0.03 Ta=25°C 5 10

50

100

200

VCE (V)

21

SLA4060 Absolute maximum ratings

NPN Darlington General purpose

External dimensions A

Unit

Symbol

VCBO

120

V

ICBO

VCEO

120

V

IEBO

VEBO

6

V

VCEO

120

IC

5

A

hFE

2000

ICP

8 (PW≤1ms, Du≤50%)

A

IB

0.5

A

1000 (Between fin and lead pin, AC)

Vrms

150

°C

Tstg

–40 to +150

°C

θ j-c

5

°C/W

Conditions

10

µA

VCB=120V

10

mA

VEB=6V

V 15000

VCE(sat)

1.0

1.5

V

VBE(sat)

1.6

2.0

V

W

Tj

Unit

5000

25 (Tc=25°C) VISO

(Ta=25°C)

Specification min typ max

Ratings

5 (Ta=25°C)

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

IC=25mA VCE=2V, IC=3A IC=3A, IB=3mA

ton

0.5

µs

VCC 30V,

tstg

5.5

µs

IC=3A,

tf

1.5

µs

IB1=–IB2=3mA

■Equivalent circuit diagram 2 5

1

R1

9

4

11

8

12

R2

3

6

7

10

R1: 2.5kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 1mA 0.8mA 0.7mA

5

hFE-IC Characteristics (Typical) (VCE=2V)

0.6mA

20000

IB=2mA A

10000

0.5m

(VCE=2V)

20000 10000

typ

4

hFE-IC Temperature Characteristics (Typical)

5000

5000

1000

1000

A

hFE

IC (A)

hFE

0.4m

3

500

°C 25 =1 C Ta 75° C ° 25 °C 0 –3

500

2

1

0 0

2

1

3

4

100

100

50

50

20 0.02

5

VCE (V)

0.1

0.5

1

20 0.02

5

0.05

0.1

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

0.5

1

5

IC (A)

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical) 2

0.05

IC-VBE Temperature Characteristics (Typical)

3

(VCE=2V)

5

IC=5A

IC=1A

125°C

1

0 0.5

1

0 0.2

5

IC (A)

0.5

1

5

10

0 0

50

1

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

15

5

µs 100

5

IC (A)

PT (W)

k

10 0×

tsin

Without Heatsink

ea

5

1

eH

θ j–a (°C / W)

init

10

1

ms

Inf

10

ith 10 0×

3

s 1m

20

2

10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm W

10

VBE (V)

Safe Operating Area (SOA)

25

20

–30°C

°C 75°C 25°C

2

IC=3A

1

125

25°C 75°C

3

Ta=

Ta=–30°C

2

IC (A)

1

VCE (sat) (V)

VCE (sat) (V)

4

2

0.5

50 ×50 ×2

0.1 Single Pulse

0.05 Without Heatsink

0.5 1

5

10

50 100

PW (mS)

22

500 1000

0 –40

Ta=25°C

0

50

Ta (°C)

100

150

0.03 3

5

10

50

VCE (V)

100

200

SLA4061

NPN Darlington

Absolute maximum ratings

(Ta=25°C)

With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

120 120 6 5 8 (PW≤1ms, Du≤50%) 0.5 5 (PW≤0.5ms, Du≤25%) 8 (PW≤10ms, single) 120 5 (Ta=25°C) 25 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5

V V V A A A A A V

ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf

VISO Tj Tstg θ j-c

Unit

Conditions

µA mA V

VCB=120V VEB=6V IC=25mA VCE=2V, IC=3A

V V µs µs µs

IC=3A, IB=3mA VCC 30V, IC=3A, IB1=–IB2=3mA

Specification min typ max 120 1.2 10 100

Symbol

Vrms °C °C °C/W

VR VF IR trr

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

12

8

5

1

(Ta=25°C)

Specification min typ max 10 10 120 2000 5000 15000 1.0 1.5 1.6 2.0 0.5 5.5 1.5

10 11

9

4

3

SLA (12-pin)

●Diode for flyback voltage absorption

W

■Equivalent circuit diagram 2

•••

Electrical characteristics

Symbol

PT

External dimensions A

R1 R2

7

6

R1: 2.5kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 1mA 0.8mA 0.7mA

5

hFE-IC Characteristics (Typical)

mA

20000 0.5mA

hFE-IC Temperature Characteristics (Typical)

(VCE=2V)

0.6mA

I B= 2

(VCE=2V)

20000 10000

10000 typ

4

5000

5000

1000

1000

hFE

IC (A)

3

hFE

0.4mA

500

°C 25 =1 Ta °C 5 7 C ° 25

500

2

C 0°

–3

1

0 0

1

2

3

4

100

100

50

50

20 0.02

5

0.05

VCE(sat)-IC Temperature Characteristics (Typical)

0.5

0.1

VCE (V)

1

20 0.02

5

0.05

0.1

0.5

1

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

2

5

IC (A)

(VCE=2V)

5

3

25°C 75°C

IC=5A

2

IC=3A

1

3 Ta= 125 °C 75°C 25°C –30°C

Ta=–30°C

2

IC (A)

1

VCE (sat) (V)

VCE (sat) (V)

4

IC=1A

125°C

1

0 0.5

0 0.2

5

1

IC (A)

0.5

θ j-a-PW Characteristics

1

5

10

IB (mA)

0 0

50

Safe Operating Area (SOA) µs 100

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

5

IC (A)

k

Without Heatsink

10 0×

tsin

5

ea

10 0×

10

1

1

eH

PT (W)

init

θ j–a (°C / W)

ms

Inf

15

s

ith

10

W

1m

20

5

3

10

25

10

2

VBE (V)

PT-Ta Characteristics

20

1

0.5

2

50 ×50 ×2

0.1 Single Pulse

0.05 Without Heatsink 0.5 1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

0.03 Ta=25°C 3 5

10

50

100

200

VCE (V)

23

SLA4070 Absolute maximum ratings

PNP Darlington General purpose

External dimensions A

(Ta=25°C)

Specification min typ max

Ratings

Unit

Symbol

VCBO

–100

V

ICBO

VCEO

–100

V

IEBO

VEBO

–6

V

VCEO

–100

IC

–5

A

hFE

1000

ICP

–8 (PW≤1ms, Du≤50%)

A

IB

–0.5

A

5 (Ta=25°C)

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

Unit

Conditions

–10

µA

VCB=–100V

–10

mA

VEB=–6V

V 5000

15000

VCE(sat)

–1.0

–1.5

V

VBE(sat)

–1.6

–2.0

V

IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA

W

25 (Tc=25°C) VISO

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j-c

5

°C/W

■Equivalent circuit diagram 10

7

6

3 R1

R2

12

8

5

1

11

9

4

2

R1: 3kΩ typ R2: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical) –8 IB= –4mA

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

–2mA

(VCE=–4V)

10000

typ

–7

5000

5000 –1.2mA

–0.8mA

–4

–0.6mA

1000

hFE

–5

hFE

IC (A)

–6

500

°C 25 =1 Ta 5°C 7 °C 25

1000

–3

500

0°

C

–3 –2

–0.4mA

–1

100

100

0 0

–1

–2

–3

–4

50 –0.03

–5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

–0.5

–1

50 –0.03

–5 –8

–0.1

–0.5

–1

–5 –8

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–0.1

–3

(VCE=–4V)

–8

–1 75°C

25°C

IC= –5A

–4

IC= –3A

–1

Ta=1 25°C 75°C 25°C –30°C

Ta= –30°C

–2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–6

–2

IC= –1A

–2

125°C

0 –0.3

–0.5

–1

–5

0 –0.3

–8

0

–1

–5

IC (A)

–10

0

–50 –100 –200

–1

θ j-a-PW Characteristics

PT-Ta Characteristics

10

20

Safe Operating Area (SOA) –8

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

–5

s 0µ 10

25

–3

1m

20

–2

VBE (V)

IB (mA)

50 ×

Without Heatsink

2

IC (A)

PT (W)

θ j–a (°C/W)

s

50 ×

5

10 0×

s m

10 0×

ink ats He ite

15

10

1

10

in Inf ith W

5

2

–1 –0.5

–0.1 Single Pulse

–0.05 Without Heatsink

0.5 1

5

10

50 100

PW (mS)

24

500 1000

0 –40

Ta=25°C

0

50

Ta (°C)

100

150

–0.03 –3

–5

–10

–50

VCE (V)

–100

SLA4071

PNP Darlington

Absolute maximum ratings

(Ta=25°C)

With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

–100 –100 –6 –5 –8 (PW≤1ms, Du≤50%) –0.5 –5 (PW≤0.5ms, Du≤25%) –8 (PW≤10ms, single) 120 5 (Ta=25°C) 25 (Tc=25°) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5

V V V A A A A A V

ICBO IEBO VCEO hFE VCE(sat) VBE(sat)

VISO Tj Tstg θ j-c

•••

SLA (12-pin)

Electrical characteristics

Symbol

PT

External dimensions A

(Ta=25°C)

Specification min typ max –10 –10 –100 2000 5000 15000 –1.0 –1.5 –1.6 –2.0

Unit

Conditions

µA mA V

VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A

V V

IC=–3A, IB=–6mA

●Diode for flyback voltage absorption Specification min typ max 120 1.2 10 100

Symbol VR VF IR trr

W Vrms °C °C °C/W

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

■Equivalent circuit diagram 7

6 R1 R2

1

10

9

4

3

2

12

8

5

R1: 3kΩ typ R2: 100Ω typ

11

Characteristic curves IC-VCE Characteristics (Typical)

(VCE=–4V)

10000

–8 A

(VCE=–4V)

10000

mA –1.2

–5

–0.8mA

5000

5000

1000

1000

–0.6mA

°C 2 5 °C =1 75 °C Ta 25

hFE

–6

–4

hFE-IC Temperature Characteristics (Typical)

typ

hFE

–2m

IB= –4 m A

–7

IC (A)

hFE-IC Characteristics (Typical)

0°

C

500

500

100

100

–3

–3 –2

–0.4mA

–1 0 0

–1

–2

–3

–4

50 –0.03

–5

–0.1

VCE(sat)-IC Temperature Characteristics (Typical)

–1

–5

50 –0.03

–8

–0.1

–0.5 –1

–5

–8

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–0.5

IC (A)

VCE (V)

–3

(VCE=–4V)

–8

75°C

25°C

–4

–1

IC=1A

–2

Ta=1

–1

IC=–5A IC=–3A

25°C 75°C 25°C –30°C

Ta=–30°C

–2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–6 –2

125°C

0 –0.3

–0.5

–1

–5

0 –0.3 –0.5 –1

–8

IC (A)

θ j-a-PW Characteristics

–5 –10

0

–50 –100 –200

0

PT-Ta Characteristics

Safe Operating Area (SOA) 10

–10

0µ

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

s

20

–5

init

IC (A)

10 0×

k

5

50×

tsin

50×

–1

ea

10 0×

eH

PT (W)

Inf

θ j–a (°C / W)

ith

15

10

1

s

s m 10

W

5

–3

1m

10

–2

VBE (V)

25

20

–1

IB (mA)

–0.5

2

2

Without Heatsink

–0.1 Single Pulse

–0.05 Without Heatsink 0.5 1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

–0.03 Ta=25°C –3 –5

–10

–50

–100

VCE (V)

25

SLA4310

PNP + NPN H-bridge

External dimensions A

Absolute maximum ratings

•••

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

4

–4

A

ICP

6 (PW≤1ms, Du≤50%)

–6 (PW≤1ms, Du≤50%)

A

IB

1

–1

A

5 (Ta=25°C) PT

W

25 (Tc=25°C)

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j-c

5

°C/W

■Equivalent circuit diagram 7

10

8

12

9 2

11 4

5

1

6

3

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

4 IB= 70 m A

60mA

A m 80 A =– IB 0m –6 0mA –5 mA –40

50mA 40mA

3

NPN

–3

30mA

3

20mA

–2

IC (A)

IC (A)

IC (A)

–30mA

2

(VCE=4V)

4

–4

–20mA

2

10mA –10mA

–1

1 125 °C 75° C 25° C –30°C

1 5mA

Ta=

–5mA

0 0

1

2

3

4

5

0 0

6

–1

–3

–2

VCE (V)

–4

–5

0 0

–6

0.5

1.0

VCE (V)

1.5

VBE (V)

hFE-IC Characteristics (Typical) NPN

(VCE=4V)

PNP

500

500

PNP

(VCE=–4V)

(VCE=–4V)

–4

–3

100

IC (A)

typ

hFE

hFE

typ

100

–2

Ta=

–1

125 ° 75° C C 25° –30 C °C

50 50

20 0.01

0.05

0.1

0.5

1

20 –0.01

4

–0.05 –0.1

–0.5

–1

–4

hFE-IC Temperature Characteristics (Typical) 500

NPN

PNP

(VCE=4V)

Ta=125°C 75°C

Ta=125°C 75°C

hFE

hFE

25°C

100

(VCE=–4V)

500

–30°C

25°C

100 –30°C

50

50

20 0.01

0.05

0.1

0.5

IC (A)

26

1

4

20 –0.01

–0.05

0.1

–0.5

IC (A)

0 0

–0.5

–1.0

VBE (V)

IC (A)

IC (A)

–1

–4

–1.5

SLA4310 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

80

VCE(sat)

Specification

Unit

Conditions

10

µA

VCB=60V

10

µA

VEB=6V

V

IC=25mA

–60

VCE=4V, IC=1A

80

max

ICBO

PNP

0.6

V

min

typ

Unit

Conditions

–10

µA

VCB=–60V

–10

µA

VEB=–6V

V

IC=–25mA

max

VCE=–4V, IC=–1A

IC=2A, IB=0.2A

–0.6

V

IC=–2A, IB=–0.2A

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

1.5

PNP

20

–1.5

VCE (sat) (V)

VCE (sat) (V)

0.5

IC=

θj–a (°C / W)

10

1.0

–1.0

–0.5 3A

IC=3

A

2A

0.05

1

2A

1A

1A

0 0.005 0.01

0.1

0.5

0.5

0 –0.005 –0.01

1

–0.05 –0.1

–0.5

–1

1

5 10

VCE(sat) • VBE(sat)-IC Characteristics (Typical) NPN

(IC / IB=10)

–1.0

25 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

10

0.1

0.5

1

0 –0.05

3

ink

VCE (sat)

VCE (sat)

0× 2

50 ×50 ×2

5

0 0.05

ats

0× 10

10

VBE (sat)

He

PT (W)

15

ite

–0.5

in Inf ith

VBE (sat)

W

VCE(sat) • VBE(sat) (V)

20

0.5

500 1000

PT-Ta Characteristics PNP

(IC / IB=10)

1.0

50 100

PW (mS)

IB (A)

IB (A)

VCE (sat) • VBE (sat) (V)

5

–0.1

–0.5

–1

–3

0 –40

0

50

100

150

Ta (°C)

IC (A)

IC (A)

Without Heatsink

Safe Operating Area (SOA) NPN 5

–5

PNP

s

10

IC (A)

IC (A)

s

m

10

m s

s 1m

–10 1m

10

1 0.5

–1 –0.5

Single Pulse

Single Pulse

–0.1 Without Heatsink

0.1 Without Heatsink

Ta=25°C

T=25°C

0.05 3

5

10

50

VCE (V)

100

–0.05 –3

–5

–10

–50

–100

VCE (V)

27

SLA4340

PNP + NPN Darlington External dimensions A

H-bridge

Absolute maximum ratings

•••

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

4

–4

A

ICP

6 (PW≤1ms, Du≤50%)

–6 (PW≤1ms, Du≤50%)

A

IB

0.5

–0.5

A

5 (Ta=25°C) PT

W

25 (Tc=25°C)

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j-c

5

°C/W

■Equivalent circuit diagram 7 R3

R4

8

12 9

11

2

4

1

5 R1

R2

6

R1: 3kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

6

NPN

mA

–1.8

mA

–1.5mA

–2 .2

IB=4.0mA

5

–1.2mA

IB=

1.2mA

(VCE=4V)

6

–6 2.0mA

–1.0mA

–0.8mA

0.5mA 0.4mA

2

–2

3

2

–30°C

–0.9mA

25°C

0.6mA

T a= 1

IC (A)

0.8mA

IC (A)

4

–4

IC (A)

4

75°C 25°C

1 0 0

2

4

0 0

6

VCE (V)

0

–2

–4

0

–6

1

VCE (V)

VBE (V)

2

3

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

10000

PNP

(VCE=–4V)

10000

(VCE=–4V)

–6

typ typ

5000

–5

hFE

hFE

1000

500

Ta=125 °C

IC (A)

–4

1000

–3

–30°C

5000

500 75°C

–2 25°C

100 50 0.03

–1

100

0.1

0.5

1

50 –0.03

56

–0.1

–0.5

IC (A)

–1

–5 –6

IC (A)

hFE-IC Temperature Characteristics (Typical) NPN

(VCE=4V)

10000 5000

PNP

5000

°C 25 =1 °C Ta 75 °C 25

hFE

hFE

C 0° –3

1000

500

100

100

0.1

0.5

IC (A)

28

1

5 6

=1 Ta

1000

500

50 0.03

(VCE=–4V)

10000

50 –0.03

25

°C

75°C 25°C C 0° –3

–0.1

–0.5

IC (A)

–1

–5 –6

0 0

–1

VBE (V)

–2

–3

SLA4340 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

2000

VCE(sat)

Specification

Unit

Conditions

10

µA

VCB=60V

10

mA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=3A

2000

max

ICBO

PNP

1.5

V

min

typ

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–3A

IC=3A, IB=6mA

–1.5

V

IC=–3A, IB=–6mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

–3

2

–2

20

IC=4A IC=2A

1

θj–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

IC=–4A

5

IC=–2A

–1

IC=1A

IC=–1A

1

0 0.2

0.5

5

1

50

10

0 –0.2

100

0.5

–0.5

–1

–5

IB (mA)

–10

–50 –100

1

5 10

VCE(sat)-IC Temperature Characteristics (Typical) NPN

(IC / IB=1000)

(IC / IB=1000)

25

–3

25°C

PT (W)

VCE (sat) (V)

C 0° –3

k

0 –0.5

6

10

0×

2

×50 ×2

5

–1

–5 –6

IC (A)

IC (A)

tsin

5

0×

50

125°C

1

10

10

Ta=–30°C

–1

ea

75°C

15

eH

25°C

init

125 °C

–2

Inf

Ta =

ith

VCE (sat) (V)

75°C

20

1

0 0.5

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

W

2

500 1000

PT-Ta Characteristics PNP

3

50 100

PW (mS)

IB (mA)

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10

5

–5 1m s

10

IC (A)

–1

ms

0.1

10

IC (A)

s

s 1m

m

1 0.5

–0.5

–0.1 Single Pulse

Single Pulse

0.05 Without Heatsink

–0.05 Without Heatsink

0.03 Ta=25°C 3 5

–0.03 Ta=25°C –3 –5

10

50

VCE (V)

100

–10

–50

–100

VCE (V)

29

SLA4390

PNP + NPN Darlington H-bridge

External dimensions A

Absolute maximum ratings

•••

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

100

–100

V

VCEO

100

–100

V

VEBO

6

–6

V

IC

5

–5

A

ICP

8 (PW≤1ms, Du≤50%)

–8 (PW≤1ms, Du≤50%)

A

IB

0.5

–0.5

A

5 (Ta=25°C) PT

W

25 (Tc=25°C)

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j-c

5

°C/W

■Equivalent circuit diagram 7 R3

R4

8

12 9

11

2

4

1

5 R1

R2

R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ

6

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

IC (A)

A

0.5mA

–0.8mA

–4

–0.6mA

0.4mA

2

–2

1

–1

1

2

3

4

–3

4

–0.4mA

0 0

5

25°C

3

–5

2

–1

–2

–3

–4

0

–5

0

VCE (V)

VCE (V)

75°C 25°C –30°C

0.6m

4

6

–6

A 0.7m

5

IC (A)

–1.2mA

0.8mA

Ta=1

IB

6

–2mA

–7

1mA

IC (A)

m =2

7

(VCE=4V)

IB=–4mA

A

0 0

NPN 8

–8

8

1

2

3

VBE (V)

hFE-IC Characteristics (Typical) NPN

(VCE=4V)

20000

typ

10000

PNP

PNP

(VCE=–4V)

20000

(VCE=–4V)

–8

10000 typ

5000

5000

hFE

hFE

1000 500

IC (A)

–6

1000 500

–4

50 30 0.03

Ta= 125 °C 75° C 25°C –30°C

–2 100

100

0.1

0.5

1

5

50 30 –0.03

8

–0.1

–0.5

IC (A)

–1

–5

–8

hFE-IC Temperature Characteristics (Typical) NPN

(VCE=4V)

20000 10000

PNP

25°C

5000

Ta

=1

2

C 5°

75

75°C

°C

hFE

hFE

25

1000

(VCE=–4V)

20000 10000

5000

C 0° –3

500

1000

=1 Ta

°C

25°C

500 C 0° –3

100

100 50 30 0.03 0.05

0.1

0.5

IC (A)

30

1

5

8

50 30 –0.03 –0.05

–0.1

–0.5

IC (A)

0 0

–1

–2

VBE (V)

IC (A)

–1

–5

–8

–3

SLA4390 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

100

hFE

2000

VCE(sat)

Specification

Unit

Conditions

10

µA

VCB=100V

10

mA

VEB=6V

V

IC=10mA

–100

VCE=4V, IC=3A

2000

max

ICBO

PNP

1.5

V

min

typ

Unit

Conditions

–10

µA

VCB=–100V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–3A

IC=3A, IB=6mA

–1.5

V

IC=–3A, IB=–6mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

–3

2

–2

20

IC=5A IC=3A

1

IC=1A

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

IC=–5A IC=–3A

–1

IC=–1A

5

1

0 0.2

0.5

1

5

10

0 –0.2

50

–0.5 –1

–5

–10

–50 –100

0.5

–500

1

IB (mA)

IB (mA)

5

25

20

VCE (sat) (V)

PT (W)

50 ×

5

125°C

0.5

1

5

0 –0.3

8

–0.5

–1

–5

–8

IC (A)

IC (A)

Without Heatsink

0 –40

0

50 ×

k

25°C

tsin

75°C

×2

10

Ta=–30°C

–1

10 0× 10 0

ea

–

1

eH

C

15

init

° 30

–2

Inf

75°C 25°C

0 0.3

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

ith

VCE (sat) (V)

Ta=125°C

–3

(IC / IB=1000)

W

2

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

3

50 100

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

10

2

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP –10

10

10

10

s

1m

1m

s

s 0µ

–5

0µ

5

s

ms 10

10 m s

–1

IC (A)

IC (A)

1 0.5

–0.1

0.1

Single Pulse

Single Pulse

–0.05 Without Heatsink

0.05 Without Heatsink 0.03 3

–0.5

Ta=25°C

5

10

50

VCE (V)

100

–0.03 –3

Ta=25°C

–5

–10

–50

–100

VCE (V)

31

SLA4391

PNP + NPN Darlington H-bridge

External dimensions A

Absolute maximum ratings

Unit

NPN PNP 100 –100 100 –100 6 –6 5 –5 8 (PW≤1ms, Du≤50%) –8 (PW≤1ms, Du≤50%) 0.5 –0.5 5 (PW≤0.5ms, Du≤25%) 8 (PW≤10ms, single) 120 5 (Ta=25°C) 25 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5

VCBO VCEO VEBO IC ICP IB IF IFSM VR PT VISO Tj Tstg θ j-c

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

V V V A A A A A V W Vrms °C °C °C/W

■Equivalent circuit diagram R3

R4

3

10

2

11

4

9

6

7

1

12

8

5 R1

R2

R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

8

–1.2mA

0.8mA

6

–6

A 0.7m

IC (A)

6mA

0.

4

0.5mA

3

–4

2

–2

1

–1

3

–0.8mA

–0.6mA

4

–3

0.4mA

2

6

–5

IC (A)

5

1

(VCE=4V)

–2mA

–7

1mA

4

0 0

5

–0.4mA

–1

–2

VCE (V)

–3

–4

2

0 0

–5

VCE (V)

Ta= 125 °C 75° C 25°C –30°C

IB

m =2

8 IB=–4mA

IC (A)

7

0 0

NPN

–8 A

1

VBE (V)

2

3

hFE-IC Characteristics (Typical) NPN

(VCE=4V)

20000

typ

10000

PNP

PNP

(VCE=–4V)

20000

(VCE =–4V)

–8

10000 typ

5000

5000

1000

500

500

–4

125 °

100

0.1

0.5

1

5

50 30 –0.03

8

Ta=

50 30 0.03

–0.1

–0.5

IC (A)

–1

–5

–8

IC (A)

hFE-IC Temperature Characteristics (Typical) NPN

(VCE=4V)

20000 10000

PNP 10000 5000

C 5°

75°C

=1 Ta

25°C

500

hFE

hFE

2

1000

C 0°

–3

100 50 30 0.03

1000

Ta

°C 25 =1

500

75°C 25°C C 0° –3

100

0.1

0.5

IC (A)

32

(VCE=–4V)

20000

5000

1

5

8

50 30 –0.03

C 75°C

–2 100

–0.1

–0.5

IC (A)

–1

–5

–8

0 0

25°C –30°C

IC (A)

1000

hFE

hFE

–6

–1

–2

VBE (V)

–3

SLA4391 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

ICBO IEBO VCEO hFE VCE(sat)

typ

max 10 10

100 1000 1.5

PNP Conditions

µA mA V

VCB=100V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA

V

●Diode for flyback voltage absorption Specification min typ max 120 1.2 10

Symbol VR VF IR

Specification

Unit

min

typ

Unit

Conditions

–10 –10

µA mA V

–1.5

V

VCB=–100V VEB=–6V IC=–10mA VCE=–4V, IC=–3A IC=–3A, IB=–6mA

max

–100 1000

(Ta=25°C)

Unit

Conditions

V V µA

IR=10µA IF=1A VR=100V

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

–3

2

–2

20

IC=5A IC=3A

1

IC=1A

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

IC=–5A IC=–3A IC=–1A

–1

5

1

0 0.2

0.5

1

5

10

0.5

0 –0.2

50

–0.5 –1

–5

IB (mA)

–10

–50 –100

–500

1

5

°C Ta=125

ith

VCE (sat) (V)

PT (W) –1

–5

–8

IC (A)

0 –40

0

k

–0.5

IC (A)

Without Heatsink

0× 10

tsin

5

ea

0 –0.3

8

10

25°C

125°C

5

eH

75°C

15

10

Ta=–30°C

–1

init

C

–2

Inf

0°

1

1

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

20

25°C

0.5

25

W

VCE (sat) (V)

–3

2

–3

(IC / IB=1000)

75°C

3

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

50 100

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

0 0.3

10

IB (mA)

0× 2

50 ×50 ×2

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10 0µ

10

10 s

–5

s

1m

0µ

5 s

s

1m

ms 10

–1

IC (A)

IC (A)

s

m

10

1 0.5

0.1

–0.5

–0.1 Single Pulse

Single Pulse

0.05 Without Heatsink 0.03 3

–0.05 Without Heatsink

Ta=25°C

5

10

50

VCE (V)

100

–0.03 –3

Ta=25°C

–5

–10

–50

–100

VCE (V)

33

SLA5001 Absolute maximum ratings

N-channel General purpose

External dimensions A

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VDSS

100

V

V(BR)DSS

100

VGSS

±20

V

IGSS

ID

±5

A

IDSS

ID(pulse)

±10(PW≤1ms)

A

VTH

2.0

30

mJ

Re(yfs)

2.4

5 (Ta=25°C, with all circuits operating, without heatsink)

W

RDS(ON)

0.27

PT

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Specification min typ max

EAS*

•••

Unit

Conditions

V

ID=250µA, VGS=0V

±500

nA

VGS=±20V

250

µA

VDS=100V, VGS=0V

4.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=5A

0.30

Ω

VGS=10V, ID=5A

3.7

35 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

Ciss

350

pF

VDS=25V, f=1.0MHz,

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

Coss

130

pF

VGS=0V

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

ton

60

ns

ID=5A, VDD 50V,VGS=10V,

VISO

1000 (Between fin and lead pin, AC)

Vrms

toff

40

ns

see Fig. 3 on page 16.

Tch

150

°C

VSD

1.1

V

ISD=5A, VGS=0V

Tstg

–40 to +150

°C

trr

330

ns

ISD=±100mA

1.8

* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 2

4

1

9

11

8

5

3

12

6

7

10

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

10 10V

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

(VGS=10V)

0.4

7V

8

8

0.3

4

(Ω) (ON)

6

4

0.2

RDS

6

ID (A)

ID (A)

6V

TC=–40°C 25°C

5V

0.1

125°C

2

2 VGS=4V

0

0

0

2

4

6

8

0 0

10

2

4

VDS (V)

6

8

0

2

4

6

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

7

8

10

ID (A)

VGS (V)

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=10V

0.5

VGS=0V f=1MHz

1000

5

500

Ciss

Capacitance (pF)

(Ω)

0.3

(ON)

RDS

Re (yfs) (S)

0.4

TC=–40°C

1

0.2

25°C

Coss

100

50

125°C

0.1

0.5 0.3 0.05

0.1

0.5

5

1

Crss

0 –40

10

0

50

ID (A)

IDR-VSD Characteristics (Typical)

20

0µ s

35

M

IT

ED

10

s

s

30

(1

sh

ot

(O

)

D

20

k sin at He

1

25

ite in

R

f In

ID (A)

m

With Silicone Grease Natural Cooling All Circuits Operating

ith

4

S

50

W

6

1m

PT (W)

LI )

N

40

PT-Ta Characteristics

10

ID (pulse) max

5

30

40

20 10

IDR (A)

10

VDS (V)

(TC=25°C)

8

15 10

V

0.5

5V

10 VGS

=0 V

2

0

0.5

Without Heatsink

5

1.0

VSD (V)

34

0

Safe Operating Area (SOA)

10

0

10

150

100

TC (°C)

1.5

0.1

0 0.5

1

5

10

VDS (V)

50

100

0

50

100

Ta (°C)

150

SLA5002 Absolute maximum ratings Ratings

VDSS VGSS ID

100 ±20 ±5 ±10 (PW≤1ms) 30

PT

θ j-a θ j-c VISO Tch Tstg

With built-in flywheel diode

Unit

Symbol

V V A A mJ 5 (PW≤0.5ms, Du≤25%) A 10 (PW≤10ms, Single Pulse) A 120 V 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

1

4

9

5

8

10

SLA (12-pin)

Unit

Conditions

V nA µA V S Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 50V,VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption Symbol

min 120

VR VF IR trr

■Equivalent circuit diagram 3

•••

(Ta=25°C)

Specification min typ max 100 ±500 250 2.0 4.0 2.4 3.7 0.27 0.30 350 130 60 40 1.1 1.8 330

* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15

2

External dimensions A

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse) EAS* IF IFSM VR

N-channel

11

Specification typ max 1.0

1.2 10

100

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

12

6

7

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

10 10V

(VGS=10V)

0.4

7V

8

8

0.3

(Ω)

6V

6

(ON) TC=–40°C

4

4

25°C

5V

0.2

RDS

ID (A)

ID (A)

6

125°C

0.1

2

2 VGS=4V

0

0

0 0

2

4

6

8

10

0

2

VDS (V)

Re(yfs)-ID Characteristics (Typical)

6

0

8

2

4

6

0.5

VGS=0V f=1MHz

1000 500

Ciss

Capacitance (pF)

(Ω)

0.3

(ON)

RDS

Re (yfs) (S)

0.4

TC=–40°C 25°C

10

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=10V

5

1

8

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

7

4

VGS (V)

0.2

Coss

100

50

125°C

0.1

0.5

0.3 0.05

0.5

0.1

1

5

Crss

10

0 –40

10

0

50

150

100

0

10

20

ID (A)

IDR-VSD Characteristics (Typical)

30

40

50

VDS (V)

TC (°C)

Safe Operating Area (SOA)

PT-Ta Characteristics

(TC=25°C) 20

40 10 0µ s

ID (pulse) max

10 8

ED IT M LI

5

ID (A)

20

k

in

ts

a He

1

4

25

ite

15 10

0.5

5V

10 S=

0V

2

V

0 0

0.5

1.0

VSD (V)

Without Heatsink

5

VG

IDR (A)

30

(1 sh ot )

fin In

S

10 m s

)

ith

R

D

N

W

6

(O

With Silicone Grease Natural Cooling All Circuits Operating

35

1m s

PT (W)

10

1.5

0.1 0.5

0

1

5

10

VDS (V)

50

100

0

50

100

150

Ta (°C)

35

SLA5003 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

200 ±20 ±5

ID(pulse) EAS* IF IFSM VR PT

θ j-a θ j-c VISO Tch Tstg

N-channel With built-in flywheel diode

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

Symbol

1

5

8

min 200

VR

9

10

11

Specification typ max 1.0 1.5

VF IR trr

12

6

Unit

Conditions

V nA µA V S Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 100V,VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption (1 circuit)

■Equivalent circuit diagram 4

SLA (12-pin)

(Ta=25°C)

Specification min typ max 200 ±500 250 2.0 4.0 1.3 2.5 0.67 0.9 260 100 50 60 1.1 1.5 700

Symbol

* : VDD=20V, L=10mH, ID=3.5A, unclamped, see Fig. E on page 15. 3

•••

Electrical characteristics

(Ta=25°C)

V V A ±10 (PW≤1ms) A 60 mJ 5(PW≤0.5ms, Du≤25%) A 10(PW≤10ms, Single pulse) A 200 V 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

2

External dimensions A

1.2 2.0 10

100

Unit

Conditions

V V V µA ns

IR=10µA IF=1A IF=5A VR=200V IF=±100mA

7

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

8

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

8

(VGS=10V)

1.5

10V

6

6

4

(ON)

4

(Ω)

1.0

ID (A)

ID (A)

7V

RDS

6V TC=–40°C

2

125°C

VGS=5V

0 0

5

10

15

0

0

20

0

2

4

VDS (V)

6

8

0

10

1

2

3

4

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

5

6

7

8

ID (A)

VGS (V)

Re(yfs)-ID Characteristics (Typical) 5

0.5

25°C

2

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=10V

2.5

VGS=0V f=1MHz

1000 500

TC=–40°C

2.0

Ciss

Capacitance (pF)

25°C

1.5

(ON)

(Ω)

Re (yfs) (S)

125°C

RDS

1

1.0

0.5

100

Coss

50

Crss

0.5 10 0.2 0.05

0.5

0.1

1

5

5

0 –40

10

0

50

150

100

0

10

20

TC (°C)

ID (A)

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

10 N)

D (O S TE RD LIMI

(1s

ho

t)

20

ite sin

at

He

0.5

25

fin

1

30

In

ID (A)

ms

ith

IDR (A)

1m s 10

With Silicone Grease Natural Cooling All Circuits Operating

35

s

W

4

0µ

PT (W)

5

10 0.1

10V 5V

0

0.03

0

Without Heatsink

5 0.05

VGS=0V

0.5

1.0

VSD (V)

36

k

15 2

0

50

40

ID (pulse) max

10

6

40

PT-Ta Characteristics

(TC=25°C)

20

8

30

VDS (V)

1.5

3

5

10

50

VDS (V)

100

200

0

50

100

Ta (°C)

150

SLA5004 Absolute maximum ratings

P-channel General purpose

External dimensions A

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VDSS

–60

V

V(BR)DSS

–60

VGSS

20

V

IGSS

5

A

IDSS

A

VTH

–2.0 2.3

ID

10 (PW≤1ms)

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Specification min typ max

ID(pulse)

•••

Unit

Conditions

V

ID=–250µA, VGS=0V

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

0.30

Ω

VGS=–10V, ID=–5A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

Re(yfs)

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

RDS(ON)

0.22

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

Ciss

570

pF

VDS=–25V, f=1.0MHz,

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Coss

360

pF

VGS=0V

VISO

1000 (Between fin and lead pin, AC)

Vrms

ton

100

ns

ID=–5A, VDD –30V,VGS=–10V,

Tch

150

°C

toff

60

ns

see Fig. 4 on page 16.

Tstg

–40 to +150

°C

VSD

–4.5

trr

150

3.5

–5.5

V

ISD=–5A

ns

ISD= 100mA

±

PT

■Equivalent circuit diagram 3

1

6

7

5

10

8

2

12

4

9

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical) ---10

-–10 –7V

–10V

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

(VGS=–10V)

0.25

TC=–40°C 25°C

---8

---4

---2

–5V

---2

(Ω)

---4

---6

0.15

(ON)

–6V

0.20

125°C

RDS

---6

ID (A)

ID (A)

---8

0.10

0.05

VGS=–4V

0

0 0

---2

---4

---6

---8

0

---10

---2

---4

---6

0

---8

0

VDS (V)

Re(yfs)-ID Characteristics (Typical)

---4

---6

---8

---10

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

8

Capacitance-VDS Characteristics (Typical)

ID=–5A VGS=–10V

0.4

VGS=0V f=1MHz

2000

5

1000

TC=–40°C

1

0.2

RDS

(ON)

(Ω)

Capacitance (pF)

0.3

Re (yfs) (S)

---2

VGS (V)

25°C

Ciss

500 Coss

100

125°C

0.1 Crss

0.5

50

0.3 ---0.1

---0.5

---1

---5

30

0 ---40

---10

0

50

ID (A)

IDR-VSD Characteristics (Typical)

---10

---20

---30

---40

---50

VDS (V)

Safe Operating Area (SOA)

PT-Ta Characteristics

(TC=25°C)

–10

40

---20 10 0µ s

ID (pulse) max

---10 –8

30

(1 sh ot

)

–5 V

---1

25 20

k sin at He

ID (A)

–1 0

D

)

ite fin In

–4

R

S

N

PT (W)

V

LI (O

With Silicone Grease Natural Cooling All Circuits Operating

35

1m s

ith W

–6

10 m s

ED IT M

---5

0V

15 S=

---0.5 10

VG

IDR (A)

0

150

100

TC (°C)

–2

Without Heatsink

5 0 0

–1

–2

VSD (V)

–3

–4

---0.1 ---0.5 ---1

0

---5

---10

VDS (V)

---50 ---100

0

50

100

150

Ta (°C)

37

SLA5005 Absolute maximum ratings

P-channel General purpose

External dimensions A

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VDSS

–100

V

V(BR)DSS

–100

VGSS

20

V

IGSS

5

A

IDSS

A

VTH

–2.0 0.9

ID

10 (PW≤1ms)

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Specifications min typ max

ID(pulse)

•••

Unit

Condition

V

ID=–250µA, VGS=0V

500

nA

VGS= 20V

–250

µA

VDS=–100V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

0.7

Ω

VGS=–10V, ID=–5A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

Re(yfs)

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

RDS(ON)

0.55

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

Ciss

300

pF

VDS=–25V, f=1.0MHz,

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Coss

200

pF

VGS=0V

VISO

1000 (Between fin and lead pin, AC)

Vrms

ton

150

ns

ID=–5A, VDD –50V, VGS=–10V,

Tch

150

°C

toff

200

ns

see Fig. 4 on page 16.

Tstg

–40 to +150

°C

VSD

–4.5

V

ISD=–5A, VGS=0V

trr

220

ns

ISD= 100mA

PT

■Equivalent circuit diagram 3

6

1

7

5

–5.5

10

8

2

2.0

12

4

9

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

–10

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

–10

(VGS=–10V)

1.0

TC=–40°C

–10V

25°C

–8

–8

0.8

125°C

(Ω)

0.6

(ON)

–6

RDS

ID (A)

ID (A)

–7V

–6

–4

–6V

–4

–2

–5V

–2

0.4

0.2

VGS=–4V

0

0

–2

–4

–6

–8

0

0

–10

0

VDS (V)

–2

–4

–6

0

–10

Capacitance (pF)

(Ω) (ON)

RDS

Re (yfs) (S)

0.6

0.4

25°C

VGS=0V f=1MHz

Ciss

Coss

100

50

125°C

---0.5

Crss

0.2

---1

---5

20

0 ---40

---10

0

50

ID (A)

150

100

0

---10

---20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA) 10 0µ s

ID (pulse) max

With Silicone Grease Natural Cooling All Circuits Operating

35

nk

i ts

ID (A)

20

ea

IDR (A)

25

H

---1

30

ite

S D

1m s (1 sh ot )

fin In

---4

R

) N (O

ith W

---6

PT (W)

10 m s

ED

IT

M

LI

---50

40

---8

---5

---40

PT-Ta Characteristics

(TC=25°C)

---20 ---10

---30

VDS (V)

TC (°C)

---10

15 –1

---2

0V

---0.5

V –5

10 0V

V

S= G

0

---1

---2

VSD (V)

Without Heatsink

5

0

38

---10

500

0.8

TC=–40°C

---8

1000

1.0

1

---6

Capacitance-VDS Characteristics (Typical)

ID=–5A VGS=–10V

1.2

0.3 ---0.05 ---0.1

---4

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

0.5

---2

VGS (V)

Re(yfs)-ID Characteristics (Typical) 5

–8

---3

---4

---0.1 ---0.5 –1

0

---5

---10

VDS (V)

---50 ---100

0

50

100

Ta (°C)

150

SLA5006 Absolute maximum ratings Symbol

P-channel With built-in flywheel diode

Unit

Symbol

V V A ID(pulse) A IF 5(PW≤0.5ms, Du≤25%) A IFSM 10(PW≤10ms, Single pulse) A VR 120 V 5 (Ta=25°C, with all circuits operating, without heatsink) W PT 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

VDSS VGSS ID

–100 20 5 10(PW≤1ms)

± ±

1

2

8

3

4

Specification typ max

min 120

VR VF IR

1.0

trr

12

9

10

(Ta=25°C)

Specification min typ max –100 500 –250 –2.0 –4.0 0.9 2.0 0.55 0.7 300 200 150 200 –4.5 –5.5 220

Symbol 7

5

SLA (12-pin)

Unit

Condition

V nA µA V S Ω pF pF ns ns V ns

ID=–250µA, VGS=0V VGS= 20V VDS=–100V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–5A VGS=–10V, ID=–5A VDS=–25V, f=1.0MHz, VGS=0V ID=–5A, VDD –50V, VGS=–10V, see Fig. 4 on page 16. ISD=–5A, VGS=0V ISD= 100mA

●Diode for flyback voltage absorption

■Equivalent circuit diagram 6

•••

Electrical characteristics

(Ta=25°C)

Ratings

External dimensions A

1.2 10

100

Unit

Condition

V V µA

IR=10µA IF=1A VR=120V

ns

IF= 100mA

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

–10

40°C 25 °C

–10

TC=–

–10V

–8

–8

5°

0.8

–5V

–4

0.6

(ON)

ID (A)

(Ω)

–2

–6

RDS

–6V

ID (A)

–4

(VGS=–10V)

1.0

C

12

–7V

–6

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

0.4

0.2

–2

VGS=–4V

0 0

–2

–4

–6

–8

0

–10

0

–2

–4

VDS (V)

–6

–8

0

–10

0

---2

---4

---6

VGS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

---10

Capacitance-VDS Characteristics (Typical)

ID=–5A VGS=–10V

1.2

5

---8

ID (A)

VGS=0V f=1MHz

1000

1.0

500

Capacitance (pF)

(Ω) (ON)

0.6

RDS

1

0.4

TC=–40°C 25°C

0.5

50

---0.5

Crss

0.2

125°C

0.3 ---0.05 ---0.1

---5

---1

0 –40

---10

0

50

ID (A)

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

---8 M

20

sin at

---1

25

He

R

30

ite

ID (A)

(1 sh ot )

With Silicone Grease Natural Cooling All Circuits Operating

35

fin

N (O

k

15

0V

---50

In

S

---40

ith

D

IT

)

---30

W

LI

---4

10 m s

ED

---5 ---6

---0.5

V –5 S=

0V

10

VG

---2

VSD (V)

Without Heatsink

5

0 ---1

---20

40

10 0µ s 1m s

ID (pulse) max

0

---10

PT-Ta Characteristics

(TC=25°C)

---10

IDR (A)

0

VDS (V)

---20

---2

20

150

100

TC (°C)

---10

–1

Coss

100

PT (W)

Re (yfs) (S)

Ciss

0.8

---3

---4

---0.1 ---0.5

0

---1

---5

---10

VDS (V)

---50 ---100

0

50

100

150

Ta (°C)

39

SLA5007

N-channel + P-channel External dimensions A

H-bridge

Absolute maximum ratings

(Ta=25°C)

Ratigs

Symbol

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

20

V

ID

±5

4

A

ID(pulse)

±10 (PW≤1ms)

8 (PW≤1ms)

A

EAS*

2

—

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

PT

SLA (12-pin)

•••

W

35 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 10

7

Pch 12

8 11 2

Nch

9 4

5

1 6

3

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

10

N-ch

(VDS=10V)

10

–8 10V

–10V

7V

8

8 –6

–7V

ID (A)

6V

ID (A)

ID (A)

6

–4

6

4

4

TC=–40°C

–6V

5V

25°C

–2

2

2

125°C

–5V

VGS=4V

VGS=–4V

0

0 0

2

4

6

0

10

8

–2

–4

–6

–8

0

–10

0

2

VDS (V)

6

4

VDS (V)

8

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(VGS=10V)

0.20

0.6

P-ch

(VGS=–10V)

(VDS=–10V)

–8 TC=–40°C 25°C

0.5 0.15

0.3

RDS

0.10

0.4

ID (A)

(ON)

(Ω)

(Ω) (ON)

RDS

125°C

–6

–4

0.2 0.05

–2 0.1

0

0

2

4

6

8

0

10

0

---2

ID (A)

---4

---6

---8

ID (A)

0.3

P-ch

ID=5A VGS=10V

1.0

ID=–4A VGS=–10V

(Ω) (ON)

RDS

RDS

(ON)

(Ω)

0.8

0.2

0.6

0.4

0.1 0.2

0 ---40

0

50

TC (°C)

40

100

150

0 ---40

0

50

TC (°C)

0

–2

–4

–6

VGS (V)

RDS(ON)-TC Characteristics (Typical) N-ch

0

100

150

–8

–10

SLA5007 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±20V

IDSS

250

µA

VDS=60V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

1.6

VTH

2.0 2.2

3.3

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–60

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

2.2

RDS(ON)

0.17

Ω

VGS=10V, ID=5A

0.38

Ω

VGS=–10V, ID=–4A

Ciss

300

pF

VDS=25V, f=1.0MHz,

270

pF

VDS=–25V, f=1.0MHz,

Coss

160

pF

VGS=0V

170

pF

VGS=0V

ton

35

ns

ID=5A, VDD 30V,VGS=10V

60

ns

ID=–4A, VDD –30V,VGS=10V,

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

ISD=5A, VGS=0V

–4.4

V

ISD=–4A, VGS=0V

ns

ISD=±100mA

150

ns

ISD= 100mA

toff

35

VSD

1.1

trr

140

0.22

1.5

0.55

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

(VDS=10V)

10

Safe Operating Area (SOA) P-ch

N-ch

(VDS=–10V)

5

(TC=25°C)

20 ID (pulse) max

10

5 5

=–

C 5°

12

1

40 =– °C TC 25 C 5° 12

D

R

ID (A)

°C

40

TC

Re (yfs) (S)

Re (yfs) (S)

°C

1

S

(O

N

)

LI

M

IT

ED

10 m s

1m s

10 0µ

s

(1

sh

ot )

1 0.5

25°C

0.5 0.5 0.3 0.08

0.5

1

5

0.3 ---0.1

10

---0.5

---1

ID (A)

---5

0.1 0.5

---8

1

5

10

50

100

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch 1000

VGS=0V f=1MHz

P-ch 700

P-ch

IT ED

50

(O S

RD

ID (A)

100

)

N)

ot

Coss

sh

LI M

(1

Capacitance (pF)

s

---1

---0.5

Crss Crss

10

10 0

10

20

30

40

0

50

---10

---20

VDS (V)

---30

---40

---50

---0.1 ---0.5

---1

---5

---10

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics P-ch

–8

10

40 With Silicone Grease Natural Cooling All Circuits Operating

35 8 30

–1 0V

IDR (A) 10

k

sin

at

He

V

ite

fin

In

20 15

–5

V

10

VG

VG

S=

S=

–2

0V

0V

5V

2

25

ith

–4

W

6

PT (W)

–6

4

Without Heatsink

5 0

0

0

0

---50 ---100

VDS (V)

VDS (V)

N-ch

IDR (A)

Capacitance (pF)

m

50

10

Coss

s 1m

---5

Ciss

Ciss

s 0µ 10

ID (pulse) max

500

100

(TC=25°C)

---10

500

0.5

1.0

VSD (V)

1.5

0

–1

–2

–3

VSD (V)

–4

–5

0

50

100

150

Ta (°C)

41

SLA5008

N-channel + P-channel H-bridge

External dimensions A

Absolute maximum ratings Symbol

N channel

P channel

Unit

VDSS

100

–100

V

VGSS

±20

20

V

ID

±4

3

A

ID(pulse)

±8 (PW≤1ms)

6 (PW≤1ms)

A

15

—

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

PT

SLA (12-pin)

(Ta=25°C)

Ratings

EAS*

•••

W

35 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

θ j-c

3.57

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 10

7

Pch 12

8 11 2

Nch

9 4

5

1 3

6

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

N-ch

7

7

C 5°

12

6

–7V

7V

–4 5

4 6V

3

–3

ID (A)

ID (A)

5

ID (A)

25°C

–5

6

TC=– 40°C

–10V

10V

–6V

VGS=–5V

VGS=5V

0

2

–1

1

10

1

0

20

4 3

–2

2

0

(VDS=10V)

8

–6

8

0

–5

–10

VDS (V)

–15

0

–20

0

2

4

VDS (V)

6

8

10

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(VGS=10V)

0.8

P-ch

(VGS=–10V)

(VDS=–10V)

–6

TC=– 40°C 25°

C

1.5

–5 0.6

(ON)

ID (A)

(Ω)

(Ω) (ON)

RDS

RDS

0.4

12

5°

C

–4

1.0

0.5

–3

–2

0.2

–1

0

0

1

2

3

4

5

6

7

0

8

0

–1

–2

ID (A)

–3

–4

–5

–6

ID (A)

1.2

ID=4A VGS=10V

P-ch 2.0

ID=–3A VGS=–10V

1.0

1.5

(ON)

0.6

1.0

RDS

RDS

(ON)

(Ω)

(Ω)

0.8

0.4

0.5 0.2

0 --- 40

0

50

TC (°C)

42

100

150

0 –40

0

50

TC (°C)

0

–2

–4

–6

VGS (V)

RDS(ON)-TC Characteristics (Typical) N-ch

0

100

150

–8

–10

SLA5008 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specifications min

V(BR)DSS

typ

max

100

P channel Specifications

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±20V

IDSS

250

µA

VDS=100V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=4A

0.7

VTH

2.0 1.1

1.7

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–100

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–100V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–3A

1.1

RDS(ON)

0.50

Ω

VGS=10V, ID=4A

1.1

Ω

VGS=–10V, ID=–3A

Ciss

180

pF

VDS=25V, f=1.0MHz,

180

pF

VDS=–25V, f=1.0MHz,

Coss

82

pF

VGS=0V

85

pF

VGS=0V

ton

40

ns

ID=4A, VDD 50V, VGS=–10V,

90

ns

ID=–3A, VDD –50V, VGS=–10V,

ns

see Fig. 3 on page 16.

80

ns

see Fig. 4 on page 16.

V

ISD=4A

–4.0

V

ISD=–3A

ns

ISD=±100mA

250

ns

ISD= 100mA

toff

40

VSD

1.2

trr

250

0.60

2.0

1.3

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

(VDS=10V)

5

Safe Operating Area (SOA) P-ch

N-ch

(VDS=–10V)

5

(TC=25°C)

10

10

ID (pulse) max

s 0µ

IT M LI N) (O S

ID (A)

RD

Re (yfs) (S)

Re (yfs) (S)

1

0.5

25°C

0.5

0.2 0.05

)

1

ot

1

°C 40 =– °C TC 25 C 5° 12

s

C 5°

sh

12

(1

°C

s

40

m

=– TC

1m

10

ED

5

0.5

0.1

0.5

5

1

0.2 –0.05

8

–0.5

–0.1

ID (A)

–1

0.1 0.5

–6

1

5

ID (A)

10

50

100

VDS (V)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch 600

VGS=0V f=1MHz

P-ch 700

P-ch

(TC=25°C)

---10

s 0µ 10

ID (pulse) max

500

---5 ED IT LI M (O N) S

RD

ID (A)

Capacitance (pF)

) ot

Coss

50

sh

---1

---0.5 Crss

Crss

10

10

5 0

10

20

30

40

5

50

0

---10

---20

VDS (V)

---30

---40

---50

---0.1 ---0.5

---5

---10

---50 ---100

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics P-ch

8

40

---6

With Silicone Grease Natural Cooling All Circuits Operating

35

7

---5

6

30

V –5

10

IDR (A)

–1

S=

0V

10V 5V

1

VG

V

S= G

0V

0.5

1.0

VSD (V)

1.5

Without Heatsink

5 0

0 0

k in ts ea H

–1

20 15

0V

---2 2

ite fin In

---3

3

25

ith W

4

PT (W)

---4

5

0

---1

VDS (V)

N-ch

IDR (A)

Capacitance (pF)

(1

100

s

s

Coss

50

m 10

100

Ciss

1m

Ciss

0

–1

–2

VSD (V)

–3

–4

0

50

100

150

Ta (°C)

43

SLA5009

N-channel + P-channel 3-phase motor drive

External dimensions A

Absolute maximum ratings

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

20

V

ID

±5

4

A

ID(pulse)

±10 (PW≤1ms)

8 (PW≤1ms)

A

EAS*

2

—

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

PT

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 1

Pch

2

8

Nch

4

6

9 3

7

10

11

5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

10

N-ch

–8 10V

(VDS=10V)

10 –10V

7V

8

8

6V

6

–7V

ID (A)

6

ID (A)

ID (A)

–6

–4

4

4 TC=–40°C –6V

5V

25°C

–2

2

125°C

2 –5V

VGS=V

VGS=–4V

0

0 0

2a

4

6

8

0

10

–2

–4

VDS (V)

–6

–8

0

–10

0

2

4

VDS (V)

6

8

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(VGS=10V)

0.20

0.6

P-ch

(VGS=–10V)

(VDS=–10V)

–8 TC=–40°C 25°C

0.5

0.15 0.4

ID (A)

(Ω) (ON)

(Ω)

0.3

RDS

0.10

RDS

(ON)

125°C

–6

–4

0.2

0.05

–2 0.1

0

0

2

4

6

8

0

10

0

–2

–4

–6

–8

ID (A)

ID (A)

0.3

P-ch

ID=5A VGS=10V

1.0

ID=–4A VGS=–10V

(Ω)

0.6

RDS

RDS

(ON)

(ON)

(Ω)

0.8 0.2

0.4

0.1

0.2

0 –40

0

50

TC (°C)

44

100

150

0 –40

0

50

TC (°C)

0

–2

–4

–6

VGS (V)

RDS(ON)-TC Characteristics (Typical) N-ch

0

100

150

–8

–10

SLA5009 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±20V

IDSS

250

µA

VDS=60V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

1.6

VTH

2.0 2.2

3.3

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–60

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

2.2

RDS(ON)

0.17

Ω

VGS=10V, ID=5A

0.38

Ω

VGS=–10V, ID=–4A

Ciss

300

pF

VDS=25V, f=1.0MHz,

270

pF

VDS=–25V, f=1.0MHz,

Coss

160

pF

VGS=0V

170

pF

VGS=0V

ton

35

ns

ID=5A, VDD 30V, VGS=–10V,

60

ns

ID=–4A, VDD –30V, VGS=–10V,

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

ISD=5A, VGS=0V

–4.4

V

ISD=–4A, VGS=0V

ns

ISD=±100mA

150

ns

ISD= 100mA

toff

35

VSD

1.1

trr

140

0.22

1.5

0.55

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10

Safe Operating Area (SOA) P-ch

(VDS=10V)

N-ch

(VDS=–10V)

5

(TC=25°C)

20

10

ID (pulse) max

10

5 C 0°

TC

=–

10

I

IM

5

°C 25 C 5° 12

L

m

1m s

)

N

S

R

ID (A)

°C 40 =– C 5° 12

Re (yfs) (S)

Re (yfs) (S)

4

TC

D TE

1

(1

(O

sh

D

ot

0µ

s

s

)

1

1 25°C

0.5

0.5

0.5 0.3 0.08

0.5

1

5

0.3 –0.1

10

–0.5

ID (A)

–5

–1

0.1 0.5

–8

1

5

10

50

100

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) N-ch

VGS=0V f=1MHz

P-ch

VGS=0V f=1MHz

1000

700

P-ch

IT ED LI M N) (O

RD

ID (A)

S

) ot

Capacitance (pF)

sh

(1

–1

–0.5

Crss Crss

10

10 0

10

20

30

40

0

50

–10

–20

–30

–40

–50

–0.1 –0.5

–1

–5

–10

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch

10

–8

40 With Silicone Grease Natural Cooling All Circuits Operating

35 8

30

0V –1

20 15

VG

S=

0V

IDR (A) =0V V GS

V 10

V –5

k in ts ea H

4

25

ite fin In

–4

ith W

PT (W)

–6 6

5V

–50 –100

VDS (V)

VDS (V)

VDS (V)

IDR (A)

Capacitance (pF)

s

s

50

s

1m m

50

10

100

Coss

100

0µ

–5

Ciss

Coss

10

ID (pulse) max

500 Ciss

(TC=25°C)

–10

500

–2

10

2 Without Heatsink

5 0

0

0 0

1.0

0.5

VSD (V)

1.5

0

–1

–2

–3

VSD (V)

–4

–5

0

50

100

150

Ta (°C)

45

SLA5010

N-channel + P-channel External dimensions A

3-phase motor drive

Absolute maximum ratings Symbol

N channel

P channel

Unit

VDSS

100

–100

V

VGSS

±20

20

V

ID

±4

3

A

ID(pulse)

±8 (PW≤1ms)

6 (PW≤1ms)

A

16

—

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

PT

SLA (12-pin)

(Ta=25°C)

Ratings

EAS*

•••

W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j–a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j–c

3.57 (Junction-Case, Tc=25°C, with all circuits operating )

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 1

Pch

2

8

9 3

Nch

4

7

6

10

11

5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

8

N-ch

–6

(VDS=10V)

8 TC=–40°C

–10V

10V

7

7

–5

25°C 125°C

6

6

–7V

7V

–4 5

4 6V

3

–3

ID (A)

ID (A)

ID (A)

5

–6V

3

–2

2

VGS=–5V

2 VGS=5V

–1

1

1 0

0

0

10

0

20

4

–5

–10

–15

0

–20

0

2

4

6

8

10

VGS (V)

VDS (V)

VDS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(VGS=10V)

0.8

P-ch

(VGS=–10V)

1.5

(VDS=–10V)

–6 TC=–40°C 25°C

–5 125°C

1.0

ID (A)

(ON)

–4

RDS

0.4

RDS

(ON)

(Ω)

(Ω)

0.6

0.5

–3

–2

0.2 –1

0

0

0

1

2

3

4

5

6

7

8

0

–1

–2

–3

–4

–5

–6

RDS(ON)-TC Characteristics (Typical) N-ch 1.2

ID=4A VGS=10V

P-ch 2.0

ID=–3A VGS=–10V

1.0

(Ω) (ON)

1.0

RDS

0.6

RDS

(ON)

(Ω)

1.5 0.8

0.4

0.5 0.2

0 –40

0

50

TC (°C)

46

100

150

0 –40

0

50

TC (°C)

0

0

–2

–4

–6

VGS (V)

ID (A)

ID (A)

100

150

–8

–10

SLA5010 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

100

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

± 500

nA

VGS=±20V

IDSS

250

µA

VDS=100V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=4A

0.7

VTH

2.0 1.1

1.7

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–100

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–100V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–3A

1.1

RDS(ON)

0.50

Ω

VGS=10V, ID=4A

1.1

Ω

VGS=–10V, ID=–3A

Ciss

180

pF

VDS=25V, f=1.0MHz,

180

pF

VDS=–25V, f=1.0MHz,

Coss

82

pF

VGS=0V

85

pF

VGS=0V

ton

40

ns

ID=4A, VDD 50V, VGS=10V,

90

ns

ID=–3A, VDD –50V, VGS=–10V,

ns

see Fig. 3 on page 16.

80

ns

see Fig. 4 on page 16.

V

ISD=4A, VGS=0V

–4.0

V

ISD=–3A

ns

ISD=±100mA

250

ns

ISD= 100mA

toff

40

VSD

1.2

trr

250

0.60

2.0

1.3

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

(VDS=10V)

5

Safe Operating Area (SOA) P-ch

N-ch

(VDS=–10V)

5

(TC=25°C)

10

s 0µ 10

ID (pulse) max

ED M IT LI

ID (A)

RD

S

)

(O

ot

N)

sh

Re (yfs) (S)

(1

Re (yfs) (S)

s

s

25°C

0.5

m

TC=–40°C

10

1

1m

5 °C 40 =– TC °C 25 C 5° 12

1

1

0.5 0.5

125°C

0.2 0.05

0.1

0.5

5

1

0.2 –0.05

8

–0.5

–0.1

–1

0.1

–6

0.5

1

5

ID (A)

ID (A)

10

50

100

VDS (V)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch 600

VGS=0V f=1MHz

P-ch 700

P-ch

(TC=25°C)

–10

10

ID (pulse) max

0µ

500

s

–5 IT ED M LI N) (O S

RD

ID (A)

Capacitance (pF)

s ) ot

Coss

50

1m

100

sh (1

Coss

50

s m

100

Ciss

10

Capacitance (pF)

Ciss

–1

–0.5 Crss

Crss

10

10

5

5 0

10

20

30

40

0

50

–10

–20

–30

–40

–50

–0.1 –0.5

–1

–5

VDS (V)

VDS (V)

IDR-VSD Characteristics (Typical)

–50

–100

PT-Ta Characteristics

N-ch

P-ch 40

–6

8 7

With Silicone Grease Natural Cooling All Circuits Operating

35

–5

30

6

sin

PT (W)

at

IDR (A)

He

20

k

15 V –5

10 0V

–1

0V

ite

10V 5V

S=

Without Heatsink

5

VG

VG

S=

1

fin

0V –1

–2

2

In

3

25

ith

4

–3

W

–4

5

IDR (A)

–10

VDS (V)

0

0

0

0

0.5

1.0

VSD (V)

1.5

0

–1

–2

VSD (V)

–3

–4

0

50

100

150

Ta (°C)

47

SLA5011 Absolute maximum ratings Symbol

N-channel External dimensions A

General purpose

Unit

Symbol

VDSS

60

V

V(BR)DSS

±20

V

IGSS

ID

±5

A

IDSS

ID(pulse)

±10(PW≤1ms)

A

VTH

2.0

2

mJ

Re(yfs)

2.2

5 (Ta=25°C, with all circuits operating, without heatsink)

W

RDS(ON)

0.17

PT

(Ta=25°C)

Specification min typ max

VGSS

EAS*

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Ratings

•••

Unit

Conditions

V

ID=250µA, VGS=0V

±500

nA

VGS=±20V

250

µA

VDS=60V, VGS=0V

4.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=5A

0.22

Ω

VGS=10V, ID=5A

60

3.3

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

Ciss

300

pF

VDS=25V, f=1.0MHz,

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

Coss

160

pF

VGS=0V

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

ton

35

ns

ID=5A, VDD 30V, VGS=10V,

VISO

1000 (Between fin and lead pin, AC)

Vrms

toff

35

ns

see Fig. 3 on page 16.

Tch

150

°C

VSD

1.1

Tstg

–40 to +150

°C

trr

150

1.5

V

ISD=5A

ns

ISD=±100mA

* : VDD=20V, L=1mH, ID=1.5A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 3

2

5

7

4

6

9

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

10V

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

10

(VGS=10V)

0.20

7V

8

8

6

6

(Ω) (ON)

6V

4

4

0.10

RDS

ID (A)

ID (A)

0.15

TC=–40°C 5V

25°C

2

2

0.05

125°C

VGS=4V

0

0 0

2

4

6

8

10

0

2

6

4

0

8

0

2

4

6

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

10

10

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=10V

0.3

8

ID (A)

VGS=0V f=1MHz

1000

500 5

RDS

(ON)

°C 40 =– TC 5°C 12

Capacitance (pF)

(Ω)

Re (yfs) (S)

Ciss

0.2

1

0.1 25°C

Coss

100

50 Crss

0.5

0.5

5

1

0 –40

10

0

50

IDR-VSD Characteristics (Typical)

ED

IT M

5

PT-Ta Characteristics With Silicone Grease Natural Cooling All Circuits Operating

35

1m s

30

(1 sh ot )

25

ite

20

a He k

in

ts

1

fin

ID (A)

50

In

R 0V

S D

40

ith

6

10 m s

LI ) N (O

30

W

IDR (A)

20

40

10 0µ s

ID (pulse) max

10 8

S=

0V

15 0.5

VG

5V

10

VDS (V)

(TC=25°C)

20

1

0

Safe Operating Area (SOA)

10

4

10

150

100

TC (°C)

ID (A)

PT (W)

0.3 0.08

10

2 Without Heatsink

5 0

0

0.5

1.0

VSD (V)

48

1.5

0.1 0.5

0 1

5

10

VDS (V)

50

100

0

50

100

Ta (°C)

150

SLA5012 Absolute maximum ratings

P-channel General purpose

External dimensions A

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

Specification min typ max

VDSS

–60

V

V(BR)DSS

–60

VGSS

20

V

IGSS

ID

5

A

IDSS

ID(pulse)

10 (PW≤1ms)

A

VTH

–2.0 2.3

Unit

Conditions

V

ID=–250µA, VGS=0V

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

0.30

Ω

VGS=–10V, ID=–5A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

Re(yfs)

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

RDS(ON)

0.22

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

Ciss

570

pF

VDS=–25V, f=1.0MHz,

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Coss

360

pF

VGS=0V

VISO

1000 (Between fin and lead pin, AC)

Vrms

ton

100

ns

ID=–5A, VDD –30V, VGS=–10V,

Tch

150

°C

toff

60

ns

see Fig. 3 on page 16.

Tstg

–40 to +150

°C

VSD

–4.5

trr

150

PT

3.5

–5.5

V

ISD=–5A

ns

ISD= 100mA

■Equivalent circuit diagram 1

2

12

4

6

3

8

5

10

7

9

11

Characteristic curves ID-VDS Characteristics (Typical) –10

ID-VGS Characteristics (Typical)

–7V

–10V

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

–10

(VGS=–10V)

0.25

TC=–40°C 25°C

–8

–8

–4

(Ω)

–4

–5V

–2

0.15

(ON)

–6

RDS

–6V

ID (A)

ID (A)

–6

0.20

125°C

0.10

0.05

–2

VGS=–4V

0 0

–2

–4

–6

–8

0

–10

0

–2

VDS (V)

Re(yfs)-ID Characteristics (Typical)

–6

0

–8

–2

–4

–6

–8

–10

Capacitance-VDS Characteristics (Typical)

ID=–5A VGS=–10V

0.4

VGS=0V f=1MHz

2000

5

1000

(Ω) (ON)

1

Capacitance (pF)

0.3

°C 40 =– TC 5°C 12

0.2

RDS

Re (yfs) (S)

0

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

8

–4

VGS (V)

25°C

Ciss

500 Coss

100

0.1 Crss

0.5

50

0.3 –0.1

–0.5

–1

–5

30

0 –40

–10

0

50

ID (A)

150

100

IDR-VSD Characteristics (Typical)

ED

10

IT M LI

m s

30 sh

N

)

ot

20

sin

at

He

D

R

ID (A)

ite

fin

–1

25

In

PT (W)

S(

O

)

ith

–5 V

With Silicone Grease Natural Cooling All Circuits Operating

35

(1

10

0V

VG

S=

k

–0.5

Without Heatsink

5

0 0

–1

–2

VSD (V)

–3

–4

–0.1 –0.5

---50

W

–10 V

1m s

15

–2

---40

40

s 0µ

–5

---30

10

ID (pulse) max

–10

–8

–4

---20

PT-Ta Characteristics

(TC=25°C) –20

–6

---10

VDS (V)

Safe Operating Area (SOA)

–10

IDR (A)

0

TC (°C)

0 –1

–5

–10

VDS (V)

–50

–100

0

50

100

150

Ta (°C)

49

SLA5013

N-channel + P-channel H-bridge

External dimensions A

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

N channel

P channel

Unit

VDSS

100

–100

V

VGSS

±20

20

V

±5

ID

±10 (PW≤1ms)

ID(pulse) EAS*

5

A

10 (PW≤1ms)

A

30

—

mJ

5 (Ta=25°C, with all circuits operating, without heatsink) PT

SLA (12-pin)

•••

W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 10

7

Pch 12

8 11 2

Nch

9 4

5

1 3

6

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

10

N-ch

–10

(VDS=10V)

10

10V –10V

7V

8

–8

8

6V

–7V

4

–6

ID (A)

ID (A)

ID (A)

6

6

–4

–6V

4

–2

–5V

2

TC=–40°C 25°C

5V

125°C

2 VGS=4V

VGS=–4V

0

0 0

2

4

6

8

0

10

–2

–4

VDS (V)

–6

–8

0

–10

0

2

4

VDS (V)

6

8

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(VGS=10V)

P-ch

(VGS=–10V)

1.0

(VDS=–10V)

–10

0.8

–8

0.6

–6

TC =

–40

°C 25° C

0.4

12

C 5°

0.1

0

0

2

4

6

8

0.4

–4

0.2

–2

0

10

ID (A)

(ON)

RDS

0.2

RDS

(ON)

(Ω)

(Ω)

0.3

0

0

–2

ID (A)

–4

–6

–8

–10

RDS(ON)-TC Characteristics (Typical) N-ch 0.5

ID=5A VGS=10V

P-ch 1.2

(Ω) (ON)

0.3

0.8

0.6

RDS

(Ω) (ON)

RDS

ID=–5A VGS=–10V

1.0

0.4

0.2

0.4 0.1

0 –40

0.2

0

50

TC (°C)

50

100

150

0 –40

0

50

TC (°C)

0

–2

–4

–6

VGS (V)

ID (A)

100

150

–8

–10

SLA5013 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

100

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±20V

IDSS

250

µA

VDS=100V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

0.9

VTH

2.0 2.4

3.7

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–100

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–100V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

2.0

RDS(ON)

0.27

Ω

VGS=10V, ID=5A

0.55

Ω

VGS=–10V, ID=–5A

Ciss

350

pF

VDS=25V, f=1.0MHz,

300

pF

VDS=–25V, f=1.0MHz,

Coss

130

pF

VGS=0V

200

pF

ton

60

ns

ID=5A, VDD 50V, VGS=10V,

150

ns

ns

see Fig. 3 on page 16.

200

V

ISD=5A, VGS=0V

–4.5

ns

ISD=±100mA

220

toff

40

VSD

1.1

trr

330

0.30

1.8

0.7

VGS=0V ID=–5A, VDD

–50V, VGS=–10V,

ns

see Fig. 4 on page 16.

V

ISD=–5A, VGS=0V

ns

ISD= 100mA

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

Safe Operating Area (SOA) P-ch

(VDS=10V)

7

N-ch

(VDS=–10V)

10

ID (pulse) max

5

10

°C 40 C =– 5° 12

1

=– TC

4

5

C 0°

C 5° 12

ID (A)

TC

Re (yfs) (S)

Re (yfs) (S)

(TC=25°C)

20

5

R

S

(O

N

)

10

m

s

(1

sh

0µ

s

s

ot

)

1

1

25°C

D

M LI

ED IT

1m

0.5 25°C

0.5

0.5

0.3 0.05

0.5

0.1

1

5

0.3 –0.05 –0.1

10

0.1

–5

–0.5 –1

–10

0.5

1

5

10

50

100

VDS (V)

ID (A)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch 1000

VGS=0V f=1MHz

P-ch 1000

P-ch

(TC=25°C)

–20

10

ID (pulse) max

Ciss

0µ

s

500

Coss

100

50

Ciss

–5

ID (A)

Capacitance (pF)

Capacitance (pF)

500

–10

Coss

100

R

S D

) N (O

10

ED IT M LI

1m

m

s

s

(1

sh

ot

)

–1

–0.5

50 Crss

Crss

20

10 0

10

20

30

40

0

50

–10

–20

–30

–40

–50

–0.1 –0.5

–1

–5

VDS (V)

VDS (V)

–10

–50 –100

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch

10

–10

8

–8

6

–6

40 With Silicone Grease Natural Cooling All Circuits Operating

35 30

PT (W)

IDR (A)

k

V –5 0V

10

VG

0

–1

–2

VSD (V)

Without Heatsink

5

VG

S=

S=

0V

sin

1.5

at

–2

1.0

VSD (V)

He

0.5

ite

0

fin

–1

0

In

0

20 15

0V

V 10 5V

2

–4

ith

IDR (A)

W

4

25

–3

–4

0 0

50

100

150

Ta (°C)

51

SLA5015

P-channel General purpose

Absolute maximum ratings

External dimensions A

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

Specification min typ max

VDSS

–60

V

V(BR)DSS

–60

VGSS

20

V

IGSS

ID

4

A

IDSS

ID(pulse)

8 (PW≤1ms)

A

VTH

–2.0 1.6

Unit

Conditions

V

ID=–250µA, VGS=0V

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

0.55

Ω

VGS=–10V, ID=–4A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

Re(yfs)

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

RDS(ON)

0.38

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits op1erating)

°C/W

Ciss

270

pF

VDS=–25V, f=1.0MHz,

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Coss

170

pF

VGS=0V

VISO

1000 (Between fin and lead pin, AC)

Vrms

ton

60

ns

ID=–4A, VDD –30V, VGS=–10V,

Tch

150

°C

toff

60

ns

see Fig. 4 on page 16.

Tstg

–40 to +150

°C

VSD

–4.5

trr

150

PT

■Equivalent circuit diagram 1

2

2.2

–5.5

V

ISD=–4A

ns

ISD= 100mA

12

4

6

3

8

5

10

7

9

11

Characteristic curves ID-VGS Characteristics (Typical)

25°C

(VGS=–10V)

0.6

C

40°C TC=–

–10V

0.5

(ON)

–4

–4

0.4

0.3

RDS

ID (A)

–7V

(Ω)

–6

–6

ID (A)

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

–8

125 °

ID-VDS Characteristics (Typical) –8

0.2

–6V

–2

–2

0.1 –5V

0

VGS=–4V

0

–2

–4

–6

–8

0

–10

0

–2

–4

–6

–8

Re(yfs)-ID Characteristics (Typical)

0

–2

–4

–6

–8

ID (A)

RDS(ON)-TC Characteristics (Typical)

Capacitance-VDS Characteristics (Typical)

ID=–4A VGS=–10V

(VDS=–10V)

5

0

–10

VGS (V)

VDS (V)

1.0

VGS=0V f=1MHz

700 500

Ciss

Capacitance (pF)

0.6

(ON)

(Ω)

°C 40 =– °C TC 25 C 5° 12

1

RDS

Re (yfs) (S)

0.8

0.4

50

0.2

0.5

0.3 –0.1

–0.5

10

0 –40

–5 ---8

–1

Crss

0

50

0

150

100

IDR-VSD Characteristics (Typical)

LI M IT ED

30

s

m

N) (O S

RD

k

sin

at

ID (A)

20

He

V

ite

fin

In

PT (W)

)

25

ith

ot

–1

W

sh

(1

–1 0

With Silicone Grease Natural Cooling All Circuits Operating

35

15

V S=

0V

–0.5

VG

10 Without Heatsink

5 0 –2

–3

VSD (V)

52

–50

s

10

1m

–5

–2

–1

–40

40

s 0µ 10

ID (pulse) max

–5 –6

–30

PT-Ta Characteristics

(TC=25°C) –10

0

–20

VDS (V)

Safe Operating Area (SOA)

–8

–4

–10

TC (°C)

ID (A)

IDR (A)

Coss

100

–4

–5

–0.1 –0.5

0

–1

–5

–10

VDS (V)

–50 –100

0

50

100

Ta (°C)

150

SLA5017

N-channel + P-channel 3-phase motor drive

External dimensions A

Absolute maximum ratings

Unit

N channel P channel 60 –60 ±10 20 ±5 4 ±10 (PW≤1ms) 8 (PW≤1ms) 2 — 5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.57 (Junction-Case, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150

VDSS VGSS ID ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

V V A A mJ W W °C/W °C/W Vrms °C °C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 1

Pch 2

8

9 3

Nch 4

7

6

10

11

5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

10

N-ch

(VDS=10V)

10

–8 –10V

10V

8

8 4V

–6

3.5V

–7V

ID (A)

ID (A)

ID (A)

6

–4

6

4

4

TC=–40°C

–6V

25°C

–2

VGS=3V

2

2

125°C

–5V

0

VGS=–4V

0

0

2

4

6

8

0

10

–2

–4

–6

–8

0

–10

0

1

2

VDS (V)

VDS (V)

3

4

5

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch 0.6

0.3

P-ch

(VGS=–10V)

(VDS=–10V)

–8 TC=–40°C 25°C

0.5

125°C

–6

(Ω) (ON)

(Ω)

0.3

RDS

(ON)

VGS=10V

RDS

0.4

ID (A)

4V

0.2

–4

0.2

0.1

–2 0.1

0

0 0

1

2

3

4

5

6

7

8

9

10

0

–2

–4

–6

–8

ID (A)

ID (A)

P-ch

(ID=2.5A)

0.4

1.0

ID=–4A VGS=–10V

0.8 0.3

(Ω)

0.6

(ON)

VGS=10V

RDS

RDS

(ON)

(Ω)

4V

0.2

0.4

0.1

0.2

0 –40

0

50

TC (°C)

54

100

150

0 –40

0

50

TC (°C)

0

–2

–4

–6

VGS (V)

RDS(ON)-TC Characteristics (Typical) N-ch

–0

100

150

–8

–10

SLA5017 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±10V

IDSS

250

µA

VDS=60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

1.6

VTH

1.0 3.1

4.6

RDS(ON)

0.17

0.22

Ω

VGS=10V, ID=5A

0.25

0.30

Ω

VGS=4V, ID=5A

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–60

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

Ω

VGS=–10V, ID=–4A

2.2 0.38

0.55

Ciss

400

pF

VDS=25V, f=1.0MHz,

270

pF

VDS=–25V, f=1.0MHz,

Coss

160

pF

VGS=0V

170

pF

VGS=0V

ton

80

ns

ID=5A, VDD 30V, VGS=5V,

60

ns

ID=–4A, VDD –30V, VGS=–10V,

toff

50

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

ISD=5A, VGS=0V

–4.4

V

ISD=–4A, VGS=0V

ns

ISD=±100mA

150

ns

ISD= 100mA

VSD

1.1

trr

150

1.5

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

(VDS=10V)

10

Safe Operating Area (SOA) P-ch

N-ch

(VDS=–10V)

5

(TC=25°C)

20

10 0µ s

ID (pulse) max

10 5 °C 40 =– C 5° 12

25°C

5

C 0°

–4

T

C=

°C 25 C 5° 12

D

1

IT

10 m s

M

LI S

(O

N

)

1m s (1

sh ot

)

R

ID (A)

TC

Re (yfs) (S)

Re (yfs) (S)

ED

1

1

0.5 0.5

0.5 0.3 0.05

0.5

0.1

1

5

0.3 –0.1

10

–0.5

–1

ID (A)

–5

0.1 0.5

–8

1

5

ID (A)

10

50

100

VDS (V)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch 1000

VGS=0V f=1MHz

P-ch 700

P-ch

s

ED

–5

50

M LI (O N)

RD

S

Coss

ID (A)

Coss

100

) ot sh (1

Capacitance (pF)

IT

Ciss

s m 10

100

50

–1

–0.5

Crss

Crss

10

10 0

10

20

30

40

0

50

–10

–20

–30

–40

–50

–0.1 –0.5

–1

–5

VDS (V)

VDS (V)

–10

–50 –100

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch –8

10

40 With Silicone Grease Natural Cooling All Circuits Operating

35 8

–6

PT (W)

IDR (A)

4 –5V

–2

VGS=0V

10 VGS=0V

0

0 0

20 15

4V

2

25

k in ts ea H

10V

–10V

–4

ite fin In

6

30 ith W

IDR (A)

Capacitance (pF)

Ciss

s 0µ 10

ID (pulse) max 1m

500

(TC=25°C)

–10

500

1.0

0.5

VSD (V)

1.5

Without Heatsink

5 0

0

–1

–2

–3

VSD (V)

–4

–5

0

50

100

150

Ta (°C)

55

SLA5018

N-channel + P-channel H-bridge

External dimensions A

Absolute maximum ratings

Unit

N channel P channel 60 –60 ±10 20 ±5 4 ±10 (PW≤1ms) 8 (PW≤1ms) 2 — 5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.57 (Junction-Case, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150

VDSS VGSS ID ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

V V A A mJ W W °C/W °C/W Vrms °C °C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 10

7

Pch 12

8 11 2

Nch

9 4

1

5 3

6

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

N-ch

–8

10

(VDS=10V)

10 –10V

10V

8

8 –6

3.5V

6

–7V

ID (A)

6

ID (A)

ID (A)

4V

–4

4

4

TC=–40°C

–6V

25°C

–2

VGS=3V

2

2

125°C

–5V

0

VGS=–4V

0

0

2

4

6

8

0

10

–2

–4

–6

–8

0

–10

0

VDS (V)

VDS (V)

1

2

3

4

5

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

0.3

0.6

P-ch

(VGS=–10V)

(VDS=–10V)

–8 TC=–40°C 25°C

0.5

125°C

(ON)

RDS

0.3

RDS

VGS=10V

0.4

ID (A)

(Ω)

0.2

(ON)

(Ω)

–6 4V

0.1

–4

0.2

–2 0.1

0

0

1

2

3

4

5

6

7

8

9

0

10

0

–2

–4

–6

–8

RDS(ON)-TC Characteristics (Typical) N-ch 0.4

ID=–2A VGS=–10V

(ON)

(Ω)

(Ω)

0.6

VGS=10V

0.4

RDS

0.2

RDS

(ON)

0.8

4V

0.3

0.2

0.1

0 –40

0

50

TC (°C)

56

P-ch

(ID=2.5A)

100

150

0 –40

0

50

TC (°C)

0

0

–2

–4

–6

VGS (V)

ID (A)

ID (A)

100

150

–8

–10

SLA5018 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±10V

IDSS

250

µA

VDS=60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

1.6

VTH

1.0 3.1

4.6

RDS(ON)

0.17

0.22

Ω

VGS=10V, ID=2.5A

0.25

0.30

Ω

VGS=4V, ID=2.5A

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–60

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

Ω

VGS=–10V, ID=–2A

2.2 0.38

0.55

Ciss

400

pF

VDS=25V, f=1.0MHz,

270

pF

VDS=–25V, f=1.0MHz,

Coss

160

pF

VGS=0V

170

pF

VGS=0V

ton

80

ns

ID=5A, VDD 30V, VGS=5V,

60

ns

ID=–4A, VDD –30V, VGS=–10V,

toff

50

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

ISD=5A, VGS=0V

–4.4

V

ISD=–4A, VGS=0V

ns

ISD=±100mA

150

ns

ISD= 100mA

VSD

1.1

trr

150

1.5

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

(VDS=10V)

10

Safe Operating Area (SOA) P-ch

N-ch

(VDS=–10V)

5

(TC=25°C)

20

s 0µ 10

ID (pulse) max

25°C

1

10

m

s

)

LI

M

5

°C 25 5°C 12

(1

(O N

sh

ot

S

)

D

TC

1

R

C 5°

ID (A)

12

Re (yfs) (S)

Re (yfs) (S)

TC

IT

C 0°

4 =–

s

0°

C

4 =–

1m

ED

10

5

1 0.5

0.5

0.5 0.3 0.05

0.5

0.1

1

5

0.3 –0.1

10

–0.5

–5

–1

0.1 0.5

–8

1

5

ID (A)

ID (A)

10

50

100

VDS (V)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch 1000

VGS=0V f=1MHz

P-ch 700

P-ch

10

ID (pulse) max

Ciss

–5 IT LI M S

RD

ID (A)

)

50

ot

(O

sh

N)

(1

Capacitance (pF)

s

–1

–0.5

Crss Crss

10

10

0

10

20

30

40

50

0

–10

–20

VDS (V)

–30

–40

–50

–0.1 –0.5

–1

–5

VDS (V)

–10

–50 –100

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch –8

10

40 With Silicone Grease Natural Cooling All Circuits Operating

35 8 –6

30 W H ea

20

in

ts k

IDR (A)

ite

4

25

fin

10V

–10V

–4

In

6

PT (W)

ith

IDR (A)

Capacitance (pF)

m

50

Coss

100

s

10

Coss

100

0µ

s

ED

Ciss

1m

500

(TC=25°C)

–10

500

15 –5V

–2

4V

10

2 VGS=0V

VGS=0V

0

0

0.5

1.0

VSD (V)

1.5

Without Heatsink

5

0

0 0

–1

–2

–3

VSD (V)

–4

–5

0

50

100

150

Ta (°C)

57

SLA5021 Absolute maximum ratings

N-channel

Ratings

VDSS VGSS ID

100 ±10 ±5 ±10 (PW≤1ms) 60

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

External dimensions A

General purpose

Unit

Ciss Coss ton toff VSD trr

90 75 1.1 500

Symbol

V V A ID(pulse) A EAS* mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W PT 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C

(Ta=25°C)

Specification min typ max 100 ±500 250 1.0 2.0 4 6 0.18 0.19 0.19 0.25 880 240

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON)

* : VDD=20V, L=10mH, ID=3A, unclamped, see Fig. E on page 15.

1.5

Unit

Conditins

V nA µA V S Ω Ω pF pF

ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V

ns ns V ns

ID=5A, VDD 50V, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA

■Equivalent circuit diagram 3

2

5

7

4

6

9

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

10

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

10V

0.25

4.0V

8

8

3.5V

0.20

(Ω)

VGS=4V

6

3.0V

4

0.15

VGS=10V

(ON)

4

RDS

ID (A)

ID (A)

6

TC=–40°C

0.10

25°C 125°C

2

2

0.05

VGS=2.5V

0

0

2

4

6

8

0

10

0

1

2

VDS (V)

3

0

5

4

0

2

4

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

VGS=0V f=1MHz

3000

10

Capacitance (pF)

(Ω)

VGS=4V

0.2

RDS

(ON)

Re (yfs) (S)

TC=–40°C

VGS=10V

25°C

1

125°C

Ciss

1000

0.3 5

10

Capacitance-VDS Characteristics (Typical)

(ID=2.5A)

0.4

20

8

6

ID (A)

VGS (V)

0.1

500 Coss

100 Crss

50 0.5 0.3 0.05

0.5

0.1

1

5

0 –40

10

0

50

ID (A)

150

100

IDR-VSD Characteristics (Typical)

0

10

ID (pulse) max

10 LI

I

10

R

m

s

(1

sh

ot

With Silicone Grease Natural Cooling All Circuits Operating

35 30

)

20

ite k sin at He

1

25

fin

ID (A)

M

)

0µ s

1m s

In

4

N

15

4V

0.5

10

2 VGS=0V

0.5

1.0

VSD (V)

58

Without Heatsink

5

1.5

0.1

50

ith

10V

(O

40

W

D

6

S

D TE

30

40

PT (W)

5

0

20

PT-Ta Characteristics

(TC=25°C) 20

8

0

10

VDS (V)

Safe Operating Area (SOA)

10

IDR (A)

20

TC (°C)

0 0.5

1

5

10

VDS (V)

50

100

0

50

100

Ta (°C)

150

SLA5022 Absolute maximum ratings

PNP Darlington + N-channel MOSFET

Ratings

Unit

Symbol

VM IO IOP VGSS IB

60 ±6 (PW≤100ms) ±10 (PW≤1ms) ±10 –0.5 5 (Ta=25°C) 35 (Tc=25°C) 25 3.57 1000 (Between fin and lead pin, AC) 150 –40 to +150

V A A V A

V(BR)DSS IGSS IDSS VTH Re(yfs)

W

RDS(ON)

°C/W °C/W Vrms °C °C

Ciss Coss ton toff VSD trr

θ j-a θ j-c VISO Tj Tstg

•••

SLA (12-pin)

Electrical characteristics (Sink : N channel MOSFET)

(Ta=25°C)

Symbol

PT

External dimensions A

3-phase motor drive

Specification min typ max 60 ±500 250 1.0 2.0 3.1 4.6 0.17 0.22 0.25 0.30 400 160 80 50 1.1 1.5 150

(Ta=25°C)

Unit

Conditions

V nA µA V S

ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=30V, VGS=5V ISD=4A, VGS=0V IF=±100mA

Ω pF pF ns ns V ns

■Equivalent circuit diagram 1 R1

VM

R2

2

8

9

3

7

10

OUT1

OUT2

OUT3

4

6

11 5

R1: 3kΩ typ R2: 80Ω typ

12

Characteristic curves (N-channel) VDS-ID Characteristics (Typical)

VGS-ID Temperature Characteristics (Typical)

10

IDS-RDS(ON) Characteristics (Typical)

(VDS=10V)

10

0.3

10V

8

8

4V

4

4

TC=–40°C

2

0

0

2

4

6

0.1

25°C

VGS=3V

2

0

VGS=10V

RDS

3.5V

0.2

(ON)

6

ID (A)

ID (A)

(Ω)

4V

6

8

10

125°C

0

1

2

3

4

0

5

0

1

2

3

4

VGS (V)

VDS (V)

ID-Re(yfs) Temperature Characteristics (Typical)

TC-RDS(ON) Characteristics (Typical)

6

7

8

9

10

VDS-Cpacitance Characteristics (Typical)

(ID=2.5A)

10

5

ID (A)

VGS=0V f=1MHz

1000

0.4 VDS=10V

Ciss

500

40

°C

Capacitance (pF)

=–

4V

C 5° 12

25°C

1

VGS=10V

0.2

RDS

(ON)

TC

0.3

(Ω)

Re (yfs) (S)

5

Coss

100

50

0.1

Crss

0.5 0.3 0.05

0.1

0.5

5

1

0 –40

10

0

ID (A)

50

VSD-IDR Characteristics (Typical) 10

Safe Operating Area (SOA) (TC=25°C) s 0µ 10

ID (pulse) max

10 ED IT (O

N

)

ot sh (1

LI

s

M

m

S

)

D

R

10V

ID (A)

IDR (A)

s

10

5

1m

8

1

4V

4

0.5

2

0

VGS=0V

0

0.5

1.0

VSD (V)

60

1.5

0.1 0.5

1

5

10

0

10

20

30

VDS (V)

20

6

150

100

TC (°C)

10

VDS (V)

50

100

40

50

SLA5022 Electrical characteristics (Source: PNP transistor) Specification min typ max

Symbol ICBO IEBO

Unit

Conditions

–10

µA

VCB=–60V

–5

mA

VEB=–6V

–1

VCEO

–60

hFE

2000

V 5000

IC=–25mA

12000

VCE=–4V, IC=–4A

VCE(sat)

–1.5

V

VBE(sat)

–2.0

V

VFEC

(Ta=25°C)

2.0

IC=–4A, IB=–10mA

V

IFEC=4A

trr

1.0

µs

IF=±0.5A

ton

1.0

µs

VCC –25V,

tstg

1.4

µs

IC=–4A,

tf

0.6

µs

IB1=–IB2=–10mA

fT

120

MHz

VCE=–12V, IE=1A

Cob

150

pF

VCB=–10V, f=1MHz

Characteristic curves (PNP) IC-VCE Characteristics (Typical) –12

hFE-IC Characteristics (Typical) 20000

IB=–10mA –5

mA

–3mA

10000

–2mA

5000

–6

hFE

hFE

IC (A)

typ

5000

–8

–1mA

–4

(VCE=–4V)

20000

10000

–10

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

=1 Ta

1000

1000

500

500

°C 25 °C 75 °C 25 –3

–0.5mA

–2

0 0

–2

–4

–6

200 –0.1

–0.5

–1

VCE (V)

–10

200 –0.1

C

–0.5

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

–1

–5

–10

IC (A)

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical) –3

–5

0°

IC-VBE Temperature Characteristics (Typical) (VCE=–4V)

–12

–3

–1

25°C

75°C

–8

IC=–8A IC=–4A

–1

–4

IC=–2A

125°C

0 –0.1

–2

–0.5

–1

–5

–10

0 –0.3 –0.5

–20

–1

–5

–10

–50

0

–100 –200

0

–1

IB (mA)

IC (A)

θ j-a-PW Characteristics 20

Safe Operating Area (SOA)

–3

PT-Ta Characteristics 40

10

With Silicone Grease Natural Cooling All Circuits Operating

35

s 0µ

–5

30

20

k sin at He

PT (W)

ite fin In

–1

25

ith W

IC (A)

s 1m

ms 10

10

5

–2

VBE (V)

–20 –10

θch-c (°C / W)

–6

T a= 125 °C 75° C 25°C –30 °C

Ta=–30°C

–2

IC (A)

–2

VCE (sat) (V)

VCE (sat) (V)

–10

15

–0.5 10

1

0.5 1

Single Pulse Without Heatsink Ta=25°C

5

10

50 100

PW (mS)

500 1000

–0.1 –3

–5

Without Heatsink

5

–10

–50

VCE (V)

–100

0 0

50

100

150

Ta (°C)

61

SLA5023 Absolute maximum ratings

PNP Darlington + N-channel MOSFET 3-phase motor drive

Ratings

Unit

Symbol

VM IO IOP VGSS IB

100 ±6 (PW≤100ms) ±8 (PW≤1ms) ±10 –0.5 5 (Ta=25°C) 35 (Tc=25°C) 25 3.57 1000 (Between fin and lead pin, AC) 150 –40 to +150

V A A V A

V(BR)DSS IGSS IDSS VTH Re(yfs)

W

RDS(ON)

°C/W °C/W Vrms °C °C

Ciss Coss ton toff VSD trr

θ j-a θ j-c VISO Tj Tstg

■Equivalent circuit diagram 1 R1

•••

SLA (12-pin)

Electrical characteristics (Sink: N-channel MOSFET)

(Ta=25°C)

Symbol

PT

External dimensions A

Specification min typ max 100 ±500 250 1.0 2.0 1.1 1.7 0.47 0.55 0.60 0.78 230 60 60 50 1.2 2.0 250

(Ta=25°C)

Unit

Conditions

V nA µA V S

ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=2A VGS=4V, ID=2A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=50V, VGS=10V ISD=4A, VGS=0V IF=±100mA

Ω pF pF ns ns V ns

VM

R2

2

8

9

3

7

10

OUT1

OUT2

OUT3

4

6

11 5

R1: 3kΩ typ R2: 80Ω typ

12

Characteristic curves (N-channel) VDS-ID Characteristics (Typical)

VGS-ID Temperature Characteristics (Typical)

0.8 VDS=10V

10V

4 25°C

3

3

VGS=10V

0.4

RDS

ID (A)

4V

4

(ON)

5

5

VGS=4V

0.6

(Ω)

40°C TC=–

6

4.5V

6

125 °C

7

7

ID (A)

IDS-RDS(ON) Characteristics (Typical)

8

8

3.5V

2

0.2

2 VGS=3V

1

1 0

0

0

0

2

4

6

8

2

4

6

0

8

0

1

2

3

4

VGS (V)

10

5

6

7

8

ID (A)

VDS (V)

ID-Re(yfs) Temperature Characteristics (Typical)

TC-RDS(ON) Characteristics (Typical)

VDS-Cpacitance Characteristics (Typical)

(ID=2A)

7

VGS=0V f=1MHz

700

1.2 VDS=10V

500

5

Ciss

0°

(Ω)

5° 12

(ON)

C

0.8

4V

S=

VG

V 10

0.6

VG

RDS

Re (yfs) (S)

C

=4 TC

1

Capacitance (pF)

1.0

S=

0.4

25°C

100

Coss

50

Crss

0.2

10

0.5 0.3 0.05

0.1

0.5

5

1

5

0 –40

8

0

50

ID (A)

VSD-IDR Characteristics (Typical)

s 0µ 10

I D (pulse) max

5 ED IT N) (O S

RD

ID (A)

IDR (A)

1

0.5

50

10

5

1

4V

0.5

VG

S=

0V

10V

1

40

20

θ ch-c (°C / W)

LI M

) ot sh (1

5

30

s 1m

s m 10

6

2

20

θ ch-c-PW Characteristics

(Tc=25°C)

10

7

3

10

VDS (V)

Safe Operating Area (SOA)

8

4

0

150

100

TC (°C)

0 0

0.5

1.0

VSD (V)

62

1.5

0.1 0.5

1

5

10

VDS (V)

50

100

0.2 0.1

0.5 1

5 10

50 100

PW (mS)

500 1000

500010000

SLA5023 Electrical characteristics (Source: PNP transistor) Specification min typ max

Symbol

(Ta=25°C)

Unit

Conditions

ICBO

–10

µA

VCB=–100V

IEBO

–10

mA

VEB=–6V

VCEO

–100

hFE

2000

V 5000

IC=–10mA

12000

VCE=–4V, IC=–3A

VCE(sat)

–1.5

V

VBE(sat)

–2.2

V

VFEC

1.3

IC=–3A, IB=–6mA

V

IFEC=–1A

trr

2.0

µs

IF=±100mA

ton

0.6

µs

VCC –30V

tstg

1.6

µs

IC=–3A

tf

0.5

µs

IB1=–IB2=–6mA

fT

90

MHz

VCE=–12V, IE=1A

Cob

100

pF

VCB=–10V, f=1MHz

Characteristic curves (PNP) IC-VCE Characteristics (Typical) –8

IB=–4mA –2m

–7

A

(VCE=–4V)

10000

hFE-IC Temperature Characteristics (Typical) (VCE=–4V)

20000 10000

typ

5000

–1.2mA

–6 –5

5000 °C 25 =1 75°C °C Ta 25 °C 0 –3

–0.8mA

–0.6mA

1000

hFE

–4

hFE

IC (A)

hFE-IC Characteristics (Typical) 20000

500

1000 500

–3 –2

–0.4mA

100 –1 0 0

–1

–2

–3

–4

100

50 30 –0.03 –0.05

–5

–0.1

–0.5

–1

–5

50 30 –0.03

–8

–0.05 –0.1

–0.5

VCE(sat)-IC Temperature Characteristics (Typical)

–1

–5 –8

IC (A)

IC (A)

VCE (V)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–3

(VCE=–4V)

–8

75°C

25°C

–1

–4

IC=–1A

–2

T a=

125

125°C

°C

–1

IC=–5A IC=–3A

0 –0.3

–1

–0.5

–5

0 –0.2

–10

IC (A)

–0.5 –1

–5 –10

–50 –100

0 0

–500

–1

IB (mA)

θ j-a-PW Characteristics

–2

–3

VBE (V)

Safe Operating Area (SOA)

PT-Ta Characteristics

–10

20

75°C 25°C –30°C

Ta=–30°C

–2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–6 –2

40

10

With Silicone Grease Natural Cooling All Circuits Operating

35

s

0µ

–5

10

30

1m s

10

k

in

ts

ea

PT (W)

20

H

IC (A)

25

ite

–0.5

fin In

–1

ith W

s

θ ch-c (°C / W)

m

5

15 10 –0.1

1

Single Pulse –0.05 Without Heatsink Ta=25°C

0.5 1

5

10

50 100

PW (mS)

500 1000

–0.03 –3

–5

Without Heatsink

5

–10

–50

VCE (V)

–100

0 0

50

100

150

Ta (°C)

63

SLA5024 Absolute maximum ratings

P-channel External dimensions A

General purpose

•••

SLA (12-pin)

(Ta=25°C)

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

Specification min typ max

VDSS

–60

V

V(BR)DSS

–60

VGSS

20

V

IGSS

ID

4

A

IDSS

ID(pulse)

8 (PW≤1ms)

A

VTH

–2.0 1.6

Unit

Conditions

V

ID=–250µA, VGS=0V

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

0.55

Ω

VGS=–10V, ID=–4A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

Re(yfs)

35 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

RDS(ON)

0.38

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

Ciss

270

pF

VDS=–25V, f=1.0MHz,

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Coss

170

pF

VGS=0V

VISO

1000 (Between finand lead pin, AC)

Vrms

ton

60

ns

ID=–4A, VDD –30V, VGS=–10V,

Tch

150

°C

toff

60

ns

see Fig. 4 on page 16.

Tstg

–40 to +150

°C

VSD

–4.4

trr

150

PT

2.2

–5.5

V

ISD=–4A

ns

ISD= 100mA

■Equivalent circuit diagram 3

6

1

7

5

8

2

10

12

4

9

11

Characteristic curves ID-VGS Characteristics (Typical) TC=– 40°C

–10V 25°C

–6

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

–8

0.5

–4

–4

0.4

0.3

RDS

–7V

(ON)

(Ω)

–6

ID (A)

ID (A)

(VGS=–10V)

0.6

125 °C

ID-VDS Characteristics (Typical) –8

0.2

–6V

–2

–2 0.1

VGS=–4V –5V

0 0

–2

–4

–6

–8

0

–10

0

0

–2

–4

Re(yfs)-ID Characteristics (Typical)

–8

–10

0

–2

–4

–6

–8

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

5

–6

VGS (V)

VDS (V)

Capacitance-VDS Characteristics (Typical)

ID=–4A VGS=–10V

1.0

VGS=0V f=1MHz

700 500

Ciss

°C 25 °C 5 12

Capacitance (pF)

=–

0.6

(ON)

TC

(Ω)

°C 40

RDS

Re (yfs) (S)

0.8

1

0.4

50

0.2

0.5

0.3 –0.1

–0.5

0 –40

–5 –8

–1

Crss

0

50

IDR-VSD Characteristics (Typical)

–10

–20

D IT E M LI

30

N) (O S

RD

PT (W)

k sin at He

V –5

25

ite fin In

–1

ith W

) ot sh (1

ID (A)

µs

s 1m

With Silicone Grease Natural Cooling All Circuits Operating

35

s m 10

0V

–50

40

0 10

ID (pulse) max

–5

–1

–40

PT-Ta Characteristics

(TC=25°C)

–6

–30

VDS (V)

–10

20 15

0V

–0.5

10

VG

S=

–2

0

Safe Operating Area (SOA)

–8

–4

10

150

100

TC (°C)

ID (A)

IDR (A)

Coss

100

Without Heatsink

5

0 0

–1

–2

–3

VSD (V)

64

–4

–5

–0.1 –0.5

0

–1

–5

–10

VDS (V)

–50 –100

0

50

100

Ta (°C)

150

SLA5029

N-channel

Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

60 ±20 ±4 ±8 (PW≤1ms) 1

ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

External dimensions A

General purpose

•••

SLA (12-pin)

(Ta=25°C)

Unit

(Ta=25°C)

Symbol

V V A A mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

Specification min typ max 60 ±100 100 2.0 4.0 1.5 2.4 0.33 0.45 120 60 115 35 1.1 1.5 100

Unit

Conditions

V nA µA V S Ω pF pF ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 30V, VGS=10V, see Fig. 3 on page 16. ISD=4A ISD=±100mA

* : VDD=20V, L=1mH, ID=1.2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 3

2

5

4

7

6

9

8

11

10

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

Capacitance-VDS Characteristics (Typical)

Safe Operating Area (SOA)

PT-Ta Characteristics

IDR-VSD Characteristics (Typical)

65

SLA5031 Absolute maximum ratings Ratings

VDSS VGSS ID

60 ±10 ±5 ±10 (PW≤1ms) 2

PT

θ j-a θ j-c VISO Tch Tstg

With built-in flywheel diode

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

Symbol

■Equivalent circuit diagram

1

4

9

5

8

10

min 120

VR VF IR trr

11

12

6

SLA (12-pin)

Unit

Conditions

V nA µA V S Ω Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 30V, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption

* : VDD=20V, L=1mH, ID=1.7A, unclamped, see Fig. E on page 15.

3

•••

(Ta=25°C)

Specification min typ max 60 ±500 250 1.0 2.0 3.1 4.6 0.17 0.22 0.25 0.30 400 160 80 50 1.1 1.5 150

Symbol

V V A A mJ 5 (PW≤0.5ms, Du≤25%) A 10 (PW≤10ms, Single pulse) A 120 V 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

2

External dimensions A

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse) EAS* IF IFSM VR

N-channel

Speciication typ max 1.0

1.2 10

100

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

7

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

10

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

0.3

10V

8

8

4V

4 TC=–40°C

125°C

2

0

2

4

6

8

VGS=10V

0.1

25°C

VGS=3V

2

0

0.2

(ON)

6

RDS

ID (A)

ID (A)

3.5V

4

(Ω)

4V

6

0

10

0 0

1

2

VDS (V)

3

4

5

0

1

2

3

4

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

10

5

6

7

8

9

10

ID (A)

VGS (V)

(ID=2.5A)

0.4

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

1000

500

Ciss

5

Capacitance (pF)

4V

(Ω)

4

(ON)

C 5° 12

RDS

Re (yfs) (S)

=– TC

0.3

C 0°

VGS=10V

0.2

25°C

1

Coss

100

50 Crss

0.1 0.5 0.3 0.05

0.1

0.5

5

1

0 –40

10

0

50

IDR-VSD Characteristics (Typical)

10

20

20

0µ s

LI

s

30

(1

sh

R

He

20

sin

at k

1

25

ite

PT (W)

)

fin

ot

In

ID (A)

s

m

ith

10V

10

) N (O

With Silicone Grease Natural Cooling All Circuits Operating

35

1m

W

S D

6

IT

M

5

50

40

10

ID (pulse) max

8

40

PT-Ta Characteristics

(TC=25°C)

ED

30

VDS (V)

10

IDR (A)

0

Safe Operating Area (SOA)

10

4

10

150

100

TC (°C)

ID (A)

15

4V

0.5

10 2 VGS=0V

0

0

1.0

0.5

VSD (V)

66

Without Heatsink

5

1.5

0.1 0.5

0 1

5

10

VDS (V)

50

100

0

50

100

Ta (°C)

150

SLA5037 Absolute maximum ratings Ratings

VDSS VGSS ID

100 ±20 ±10 ±40 (PW≤1ms) 200

PT

θ j-a θ j-c VISO Tch Tstg

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram 7

4

1

5

Unit

Conditions

V nA µA V S mΩ mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 50V, RL=10Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=±100mA

10

9

2

SLA (12-pin)

(Ta=25°C)

Specifications min typ max 100 ±100 100 1.0 2.0 8 13 60 80 75 95 1630 480 30 45 100 40 1.1 1.5 300

Symbol

* : VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

6

•••

Electrical characteristics

V V A A mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

3

External dimensions A

General purpose (Ta=25°C)

Symbol

ID(pulse) EAS*

N-channel

12

8

11

Characteristic curves ID-VDS Characteristics (Typical) 10

ID-VGS Characteristics (Typical)

3V

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

100

2.8V

8

8

80

VGS=4V

4V

4

(mΩ)

6

TC=–40°C

4

25°C

2.4V

2

VGS=10V

60

(ON)

2.6V

RDS

6

ID (A)

ID (A)

10V

40

125°C

2

20

2.2V VGS=2V

0

0

2

4

6

0

10

8

0

1

2

3

0

4

0

2

4

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

8

10

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

(ID=5A)

150

30

6

ID (A)

5000

TC=–40°C VGS=4V

25°C

VGS=10V

(ON)

5

100

RDS

Re (yfs) (S)

125°C

Capacitance (pF)

Ciss

(mΩ)

10

50

1000

500 Coss

1 100

Crss

0.5 0.3 0.05

0.1

0.5

5

1

0 –40

10

0

50

50

150

100

IDR-VSD Characteristics (Typical)

10

20

30

40

10

ID (pulse) max

With Silicone Grease Natural Cooling All Circuits Operating

LI N)

s ite

20

sin

at

He

(O S

RD

PT (W)

fin

In

ID (A)

25

ith

) ot sh (1

5

4

W

VGS=0V

30

1m

M

5V

IT E

D

s 0µ

35

s m 10

6

10

50

PT-Ta Characteristics

(TC=25°C) 50

8

40

VDS (V)

Safe Operating Area (SOA)

10

IDR (A)

0

TC (°C)

ID (A)

k

15 10

2 1

0

0

0.5

1.0

VSD (V)

1.5

0.5 0.5

Without Heatsink

5 0

1

5

10

VDS (V)

50

100

0

50

100

150

Ta (°C)

67

SLA5040 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

100 ±20 ±4 ±8 (PW≤1ms) 16

ID(pulse) EAS* IF IFSM VR PT

θ j-a θ j-c VISO Tch Tstg

N-channel With built-in flywheel diode

(Ta=25°C)

Unit

V V A A mJ 4 (PW≤0.5ms, Du≤25%) A 8 (PW≤10ms, Single pulse) A 120 V 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 2

1

3

5

6

4

9

8

10

12

7

Characteristic curves

68

11

External dimensions A

Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

•••

SLA (12-pin)

(Ta=25°C)

Specification min typ max 100 ±500 250 2.0 4.0 1.1 1.7 0.50 0.60 180 82 40 40 1.2 2.0 250

Unit

Conditions

V nA µA V S Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=50V, VGS=10V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption Symbol VR VF IR trr

min 120

Specification typ max 1.0 100

1.2 10

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

SLA5041 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

200 ±20 ±10

ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

N-channel External dimensions A

General purpose

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Unit

Symbol

V V A ±40 (PW≤1ms, Du≤1%) A 120 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

* : VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

(Ta=25°C)

Specification min typ max 200 ±100 100 2.0 4.0 5.0 8.5 130 175 850 550 20 25 70 70 1.0 1.5 500

Unit

Conditions

V nA µA V S mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=5A VGS=10V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 100V, RL=20Ω, VGS=10V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=±100mA

■Equivalent circuit diagram 3

6

7

4

1

9

2

10

12

5

8

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

10 10V

(VGS=10V)

200

5V

5.5V

8

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

8

(mΩ)

150 6V

4

6

(ON)

4.5V

–40°C

125°C

4

2

2 VGS=4V

0 0

2

4

50 25°C

8

6

100

RDS

ID (A)

ID (A)

6

0 0

10

2

4

VDS (V)

0 0

8

6

2

4

VGS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

8

10

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=10V

(VDS=10V)

20

6

ID (A)

400

VGS=0V f=1MHz

3000

10 1000

TC

TC

=1

25

Capacitance (pF)

C

(mΩ)

0°

°C

(ON)

4 =–

TC=25°C

200

RDS

Re (yfs) (S)

300

5

1

Ciss

500

Coss

100 50

100

Crss

0.5

0.1

0.5

1

5

0 –40

10

0

50

ID (A)

IDR-VSD Characteristics (Typical)

8

10 5

10

ED IT M LI 10 m s

0µ

With Silicone Grease Natural Cooling All Circuits Operating

35

s

s

30

(1 sh ot

)

He

20

k sin at

0.5

25

ite

1

fin In

15 VGS=0V

2

0.1

10

0.05

Without Heatsink

5 0 0

50

40

1m

RD

40

ith

ID (A)

S

N) (O

30

PT-Ta Characteristics

(TC=25°C)

V 10 5.

S=

20

W

6

VG

10

VDS (V)

50 ID (pulse) max

4

10 0

150

Safe Operating Area (SOA)

10

IDR (A)

100

TC (°C)

PT (W)

0.3 0.05

0.5

1.0

VSD (V)

1.5

0.01 0.5

0 1

5

10

VDS (V)

50 100

500

0

50

100

150

Ta (°C)

69

SLA5042

N-channel General purpose

Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

100 ±20 ±5

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram

2

7

4

6

9

SLA (12-pin)

(Ta=25°C)

Specification min typ max 100 ±100 100 1.0 2.0 4 6 130 185 155 230 740 240 20 30 60 20 1.0 1.4 180

Symbol

* : VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50Ω,see Fig. E on page 15.

5

•••

Electrical characteristics

(Ta=25°C)

V V A ID(pulse) ±10 (PW≤1ms, Du≤1%) A EAS* 70 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W PT 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C

3

External dimensions A

Unit

Conditions

V nA µA V S mΩ mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, VDD 50V, RL=20Ω, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

5

5

3V

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

200

2.8V

VGS=4V

4

4 4V

150

(mΩ)

3

(ON)

2.6V

TC=–40°C

2

2 2.4V

VGS=10V

100

RDS

ID (A)

ID (A)

10V

3

25°C

1

50

125°C

1 VGS=2.2V

0

2

0

4

6

8

0

10

1

2

3

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

1

2

3

4

VGS=0V f=1MHz

2000

1000

300

(mΩ)

Re (yfs) (S)

25°C

250

VGS=4V

RDS

(ON)

125°C

1

200 VGS=10V

150

Ciss

500

Coss

100

50

100

0.5 0.3 0.05

0.1

0.5

1

Crss

20

50 –40

5

0

50

0

150

100

ID (A)

IDR-VSD Characteristics (Typical)

20

Safe Operating Area (SOA) 0µ

IT

ED

s

M LI (O N)

In fin ite

20

He at

PT (W)

S

25

ith

RD

W

) ot sh (1

ID (A)

30

sin

1

2

With Silicone Grease Natural Cooling All Circuits Operating

35

s 1m

s m 10

5

5V

50

PT-Ta Characteristics

10

ID (pulse) max

3

40

40

10

10V

30

VDS (V)

20

4

10

TC (°C)

5

5

Capacitance-VDS Characteristics (Typical)

(ID=2.5A)

350 TC=–40°C

IDR (A)

0

ID (A)

(VDS=10V) 10

5

0

4

VGS (V)

VDS (V)

Capacitance (pF)

0

k

15 0.5

10 1

VGS= 0V

0

0

0.5

1.0

VSD (V)

70

Without Heatsink

5 TC=25°C 1-Circuit Operation

1.5

0.1 0.5

1

0 5

10

VDS (V)

50 100

200

0

50

100

Ta (°C)

150

SLA5044 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

250 ±20 ±10

ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

N-channel General purpose

External dimensions A

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Unit

Symbol

V V A ±40 (PW≤1ms, Du≤1%) A 120 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

* : VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50Ω,see Fig. E on page 15.

(Ta=25°C)

Specification min typ max 250 ±100 100 2.0 4.0 5.0 8.5 200 250 850 550 20 25 70 70 1.0 1.5 700

Unit

Conditions

V nA µA V S mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=5A VGS=10V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 100V, RL=20Ω, VGS=10V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=±100mA

■Equivalent circuit diagram 3

6

1

7

9

4

2

10

12

5

8

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical) (VGS=10V)

(VDS=10V)

10

300

5V

10V

10

8

250

8

4

(mΩ) (ON)

6

4

VGS=4V

2

0 0

2

TC=–40°C TC=25°C TC=125°C

2

4

6

8

0 0

10

200

150

100

50

2

4

0 0

8

6

2

4

6

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical) 500

3000

400

1000

Capacitance (pF)

(mΩ)

5

300

(ON)

RDS

TC=–40°C TC=25°C TC=125°C

10

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=10V

10

8

ID (A)

(VDS=10V)

20

Re (yfs) (S)

RDS

4.5V

6

ID (A)

ID (A)

6V

200

1

VGS=0V f=1MHz

Ciss

500

Coss

100 50 Crss

100 0.5

0.1

0.5

1

5

0 –40

10

0

50

ID (A)

IDR-VSD Characteristics (Typical)

10 0

150

50

ID (pulse) max

8

10

) ON

20

S

(

M

IT

10

ED

1m

m

s

50

PT-Ta Characteristics

(TC=25°C)

10

40

0µ

40 With Silicone Grease Natural Cooling All Circuits Operating

35

s

s

30 )

at

20

sin k

0.5

4

25

He

1

ite

ot

fin

sh

In

(1

ith

ID (A)

RD

LI

30

W

6

2

VGS=0V

15 V 10 5.

0.1

10

0.05

Without Heatsink

5 0 0

10

VDS (V)

Safe Operating Area (SOA)

10

5

IDR (A)

100

TC (°C)

PT (W)

0.3 0.05

0.5

1.0

VSD (V)

1.5

0.01 0.5

1

5

10

VDS (V)

50 100

500

0 0

50

100

150

Ta (°C)

71

SLA5046 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

200 ±20 ±7

ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

N-channel

Symbol

V V A ±15 (PW≤1ms, Du≤1%) A 55 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram

2

5

7

4

6

9

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Unit

3

External dimensions A

General purpose

(Ta=25°C)

Specification min typ max 200 ±100 100 2.0 4.0 2.5 5.0 270 350 450 280 120 20 30 55 75 1.0 1.5 450

Unit

Conditions

V nA µA V S mΩ pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 100V, RL=28.6Ω, VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=±100mA

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

10V

(VGS=10V) 0.5

6

5.5V

0.4

5

5V

3

4

0.3

(ON)

4

(Ω)

5

ID (A)

ID (A)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

RDS

6

ID-VGS Characteristics (Typical) 7

6V

7

3 TC=–40°C

0.2

2

2

25°C

0.1 4.5V

1

VGS=4V

0 0

2

125°C

1

4

6

8

0 0

10

2

4

VDS (V)

0 0

8

6

1

2

3

VGS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

6

7

Capacitance-VDS Characteristics (Typical)

ID=3.5A VGS=10V

(VDS=10V) 10

5

4

ID (A)

VGS=0V f=1MHZ

2000

1.0

1000 °C 40 °C 25 °C 5 12

500

Capacitance (pF)

0.8

0.6

RDS

(ON)

Re (yfs) (S)

T

– c=

(Ω)

5

0.4

1 0.2

Ciss

100 Coss

50

10

0.5 Crss

5

0.3 0.05

0.1

0.5

1

0 –40

5 7

50

0

ID (A)

100

3 0

150

IDR-VSD Characteristics (Typical) 7

10 0µ s

(1

sh

ot

)

72

VGS=

0V

10

1.5

0.05

Without Heatsink

5

0.1 1.0

VSD (V)

k

0.5

sin

0 0

15

V

1

at

10

20

He

0.5

25

ite

1

fin

ID (A)

s

In

IDR (A)

30 m

ith

3

LIMITED

W

4

(ON)

PT (W)

10

RDS

50

With Silicone Grease Natural Cooling All Circuits Operating

35

s

5 5

40

40

ID (pulse) max 1m

30

PT-Ta Characteristics

(TC=25°C)

10

6

5.

20

VDS (V)

Safe Operating Area (SOA) 20

2

10

TC (°C)

0

3

5

10

50

VDS (V)

100

500

0

50

100

Ta (°C)

150

SLA5047 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

150 ±20 ±10

ID(pulse) EAS* PT

θ j-a θ j-c VISO Tch Tstg

N-channel General purpose

Symbol

V V A ±40 (PW≤1ms, Du≤1%) A 280 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs)

Ciss Coss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram 9

4

1

Unit

Specification

V nA µA V S mΩ mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 70V, RL=14Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=±100mA

12

7

2

(Ta=25°C)

Specification min typ max 150 ±100 100 1.0 2.0 10 15 70 85 80 100 2000 470 35 40 150 50 0.9 1.5 500

RDS(ON)

* : VDD=25V, L=4.7mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

6

SLA (12-pin)

•••

Electrical characteristics

(Ta=25°C)

Unit

3

External dimensions A

10

5

8

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

150

10 VGS=10V 3V

8

8

2

0 0

4

6

8

(mΩ)

0 0

10

1

10V

RDS

2

3

50

0 0

4

2

4

6

8

10

ID (A)

RDS(ON)-TC Characteristics (Typical)

Capacitance-VDS Characteristics (Typical)

(VDS=10V)

(ID=5A)

50

VGS=4V

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

100

(ON)

2

2.4V

2

125°C 25°C

4

°C

2.6V

4

6

TC=–40

6

ID (A)

ID (A)

2.8V

VGS=0V f=1MHz

8000

200

5000

TC=–40°C

(mΩ)

125°C

(ON)

5

Capacitance (pF)

150

25°C

4V V 10

S=

100

VG

RDS

Re (yfs) (S)

10

Ciss

1000 500 Coss

50

1

Crss

100

0.5 0.3 0.05

0.1

0.5

1

5

0 –40

10

0

50

ID (A)

100

50 0

150

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA) 0µ s

PT (W)

ID (A)

5V S=

1 0.5

0V

VG

30

ot)

25

k sin at He

IDR (A)

(1

sh

RDS (ON) LIMITED

ite fin In

6

ms

ith W

5

50

With Silicone Grease Natural Cooling All Circuits Operating

35

10

10

40

40

10

s

8

30

PT-Ta Characteristics

(TC=25°C) 1m

20 15

0.1

2

10

0.05 Without Heatsink

5 0 0

20

VDS (V)

50 ID (pulse) max

10

4

10

TC (°C)

0.5

1.0

VSD (V)

1.5

0.01 0.5

1

5

10

VDS (V)

50

100 200

0 0

50

100

150

Ta (°C)

73

SLA5049

N-channel General purpose

Absolute maximum ratings

Symbol

V V A ±15 (PW≤1ms, Du≤1%) A 55 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

30 55 75 1.0 600

250 ±20 ±7

PT

θ j-a θ j-c VISO Tch Tstg

SLA (12-pin)

(Ta=25°C)

Unit

Ratings

VDSS VGSS ID

•••

Electrical characteristics

(Ta=25°C)

Specification min typ max 250 ±100 100 2.0 4.0 2.5 5.0 400 500 450 280 20

Symbol

ID(pulse) EAS*

External dimensions A

* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

1.5

Unit

Conditions

V nA µA V S mΩ pF pF ns

ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A,

ns ns ns V ns

VDD 100V, RL=28.6Ω, VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=±100mA

■Equivalent circuit diagram 3

2

5

7

4

6

9

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical) (VGS=10V)

0.5

7

5.5V

10V

6

ID-VGS Characteristics (Typical) (VDS=10V)

7

6

6V

0.4

3

4

TC=–40°C 25°C

3

0.3

(ON)

5V

RDS

4

(Ω)

5

ID (A)

ID (A)

5

125°C

0.2

2

2 4.5V

0.1

1

1 VGS=4V

0 0

2

4

6

8

0 0

10

2

VDS (V)

4

6

0 0

8

1

2

3

VGS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical) 1.0

5

0.8

6

5

7

Capacitance-VDS Characteristics (Typical)

ID=3.5A VGS=10V

(VDS=10V) 10

4

ID (A)

VGS=0V f=1MHz

2000 1000

(Ω)

0.6

RDS

(ON)

Re (yfs) (S)

500

Capacitance (pF)

°C 40 C ° 25 °C 5 12

=– TC

1

0.4

100

Coss

50

10

0.2 0.5 0.3 0.05

Ciss

5

0.1

0.5

1

5

0 –40

7

0

ID (A)

50

100

2 0

150

Crss

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

7

20

6

10

10 0µ s

With Silicone Grease Natural Cooling All Circuits Operating

35

1m s

30

ID (A)

IDR (A)

PT (W)

15

V 0V

10

10

VGS=

5.

1

0.5

1.0

VSD (V)

74

1.5

0.05 3

Without Heatsink

5

0.1

0 0

nk

2

20

i ts

0.5

25

ea

)

H

ot

ite

sh

fin

3

RDS (on) LIMITED

(1

In

s

ith

W

m

1

50

40

ID (pulse) max

10

4

40

PT-Ta Characteristics

(TC=25°C)

5

5

30

VDS (V)

TC (°C)

0 5

10

50

VDS (V)

100

500

0

50

100

Ta (°C)

150

SLA5052 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

150 ±20 ±10

ID(pulse) EAS* PT

θ j–a θ j–c VISO Tch Tstg

N-channel General purpose

Symbol

V V A ±40 (PW≤1ms, Du≤1%) A 160 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs)

Ciss Coss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram

1

9

2

Unit

Conditions

V nA µA V S mΩ mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 70V, RL=14Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=±100mA

12

7

4

SLA (12-pin)

(Ta=25°C)

Specification min typ max 150 ±100 100 1.0 2.0 8 13.5 90 115 105 130 1500 360 30 35 100 40 1.0 1.5 420

RDS(ON)

* : VDD=25V, L=2.7mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

6

•••

Electrical characteristics

(Ta=25°C)

Unit

3

External dimensions A

10

5

8

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

150

10 VGS=10V 3.5V

8

8

3V

6

25°C

4

4

10V

(ON)

TC=–40°C

100

RDS

ID (A)

ID (A)

2.8V

(mΩ)

VGS=4V

6

125°C

50

2.6V

2

2

0 0

2

4

6

8

0 0

10

1

2

4

3

0 0

5

2

4

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

50

6

8

Capacitance-VDS Characteristics (Typical)

(ID=5A)

300

VGS=0V f=1MHz

5000

250

Capacitance (pF)

(mΩ)

Re (yfs) (S)

Ciss

TC=–40°C

10

25°C

RDS

(ON)

125°C

5

200

150

4V V 10

S=

VG

100

1000 500

Coss

100

1 50

Crss

50

0.5 0.3 0.05

10

ID (A)

0.1

0.5

1

5

0 –40

10

0

50

ID (A)

100

30 0

150

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

10

50

10

1m

8

10

10

s

m

s

5

(1

sh

0µ

50

PT-Ta Characteristics

(TC=25°C)

ID (pulse) max

40

30

VDS (V)

TC (°C)

40

s

With Silicone Grease Natural Cooling All Circuits Operating

35 30

ot

)

sin

PT (W)

at

ID (A)

20

He k

VGS=0 V

ite

5V

fin

0.5

25

In

4

1

ith

IDR (A)

W

RDS (ON) LIMITED

6

15

0.1

2

10

0.05

Without Heatsink

5 0 0

0.5

1.0

VSD (V)

1.5

0.01 0.5

0

1

5

10

VDS (V)

50

100 200

0

50

100

150

Ta (°C)

75

SLA5054

N-channel General purpose

Absolute maximum ratings

External dimensions A

SLA (15-pin)

■Equivalent circuit diagram

(Ta=25°C)

Ratings Symbol FET1 FET2 FET3 VDSS 150 VGSS +20, –10 ID ±7 ±5 ±7 ID(pulse)*1 ±15 ±10 ±15 EAS*2 15 IAS 5 5 (Ta=25°C, with all circuits operating, without heatsink) PT 35 (Tc=25°C, with all circuits operating, with infinite heatsink) θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) VISO 1000 (Between fin and lead pin, AC) Tch 150 Tstg –40 to +150 *1 : PW≤100µs, duty≤50% *2 : VDD=25V, L=1.0mH, IL=5A unclamped, RG=50Ω, see Fig. E on page 15.

•••

Unit 3

V V A A mJ A W W °C/W °C/W Vrms °C °C

6

8

10

12

14

FET-1

FET-1

FET-2

FET-2

FET-3

FET-3

2

5

7

9

11

13

1

15

Pin 4 : NC

Electrical characteristics

(Ta=25°C)

FET1 Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

FET2

FET3

Specification Specification Specification Unit Conditions Unit Conditions Unit Conditions min typ max min typ max min typ max 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V 100 nA VGS=20V 100 nA VGS=20V 100 nA VGS=20V 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA 7 12 S VDS=10V, ID=3.5A 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A 80 105 mΩ VGS=10V, ID=3.5A 330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A 85 115 mΩ VGS=4V, ID=3.5A 370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A 1900 pF VDS=10V, 380 pF VDS=10V, 870 pF VDS=10V, 630 pF f=1.0MHz, 95 pF f=1.0MHz, 320 pF f=1.0MHz, 420 pF VGS=0V 25 pF VGS=0V 210 pF VGS=0V 35 ns ID=3.5A, 25 ns ID=2.5A, 25 ns ID=3.5A, 70 ns VDD 70V, 50 ns VDD 70V, 55 ns VDD 70V, 140 ns RL=20Ω, 55 ns RL=28Ω, 80 ns RL=20Ω, 90 ns VGS=5V, see Fig.3 on page 16. 40 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16. 1.0 1.5 V ISD=7A, VGS=0V 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V 620 ns IF=±100mA 180 ns IF=±100mA 500 ns IF=±100mA

Characteristic curves ID-VDS Characteristics (Typical) 10V

7

FET1

FET2

FET3 7

5

3.0V 2.6V

6

10V

4

4V

5

5

4

ID (A)

2.8V

3

ID (A)

ID (A)

10V

6 4V

2.4V

3

2.8V

4 2.6V

3

2

2.6V

2

2

2.4V

2.2V

1

1

2.4V

VGS=2.2V

VGS=2.0V

0

0

2

4

6

8

VGS=2.2V

0

0

10

0

VDS (V)

ID-VGS Characteristics (Typical)

1

2

4

6

8

0

10

2

4

FET1

8

10

VDS (V)

VDS (V)

FET2

FET3 (VDS=10V)

5

7

6

(VDS=10V)

7 6

6 4

5

4 3

0

1

2

3

0

4

1

2

3

0

4

1

2

VGS (V)

FET1

3

4

VGS (V)

FET2

100

–40°C

C –40°

0

0

VGS (V)

RDS(ON)-ID Characteristics (Typical)

1

Tc=

1

Tc= 125 °C 25° C

125 25° °C C –40°C

2

TC=1 25°C 25°C

1

4 3

2

2

0

3

ID (A)

ID (A)

ID (A)

5

FET3 200

500

4V

(mΩ)

300

70

100

RDS

(ON)

VGS=10V

150

4V VGS=10V

(ON)

(mΩ)

80

VGS=10V

400

4V

RDS

RDS

(ON) (mΩ)

90

200

50

60

50

100

0

1

2

3

4

ID (A)

76

5

6

7

0

0

1

2

3

ID (A)

4

5

0 0

1

2

3

4

ID (A)

5

6

7

SLA5054 Re(yfs)-ID Characteristics (Typical)

FET1

FET2 (VDS=10V)

100

FET3 (VDS=10V)

10

(VDS=10V)

20

10

TC

=

Re (yfs) (S)

Re (yfs) (S)

10

C 25° °C 125

T

C=

–4

C 0° 12

°C 40

25°C

1

1

=– TC

C 5°

Re (yfs) (S)

5 °C

0 –4

5

C 5°

12

25°C

1 0.5

0.1 0.05

0.1

0.5

1

5

ID (A)

RDS(ON)-TC Characteristics (Typical)

0.5

0.3 0.05

7

0.1

0.5

1

0.3 0.05

5

0.1

0.5

ID (A)

FET1

FET2 (ID=3.5A)

200

1

5

7

ID (A)

FET3 (ID=2.5A)

1.0

(ID=3.5A)

500

(Ω)

VG

RDS

4V

300

V 10

(ON)

4V

0.5

RDS

VG

V 10 S=

VG

RDS

(ON)

(ON) (mΩ)

V 10

S=

100

(mΩ)

400 4V

S=

200

100

0 –40

0

50

100

0 –40

150

0

50

Capacitance-VDS Characteristics (Typical)

100

0 –40

150

0

50

FET1

FET2

VGS=0V f=1MHz

10000

100

150

TC (°C)

TC (°C)

TC (°C)

FET3

VGS=0V f=1MHz

1000

VGS=0V f=1MHz

5000

500

Capacitance (pF)

1000

Capacitance (pF)

Capacitance (pF)

Ciss

Ciss

100 Coss

50

1000 Ciss

500

Coss

50

Coss

100

Crss

100

Crss

0

10

20

30

40

10

50

10

20

VDS (V)

IDR-VSD Characteristics (Typical)

Crss

50 40 0

30

40

50

0

10

20

FET1

40

50

VDS (V)

VDS (V)

FET2

FET3

5

7

30

7 6

6

4 5

5

2

4V

10 V

4 4V

VGS=0V

3

IDR (A)

4V

4

3

10 V

IDR (A)

IDR (A)

10V

3

VGS=0V

VGS=0V

2

2

1 1

1

0

0

0 0.5

1.0

0

1.5

0.5

1.0

Safe Operating Area (SOA)

FET1

FET2 10

ID (A)

1m

ID (pulse) MAX

5

10

RDS (on) LIMITED

m

s

0µ

s

10

(1

sh

ot

ID (A)

0.5

1-Circuit Operation

0µ s

n) (o

I M LI

s

m

s

1

5

10

50

100

200

sh

)

0.5

0.01 0.5

m

s

RDS (on) LIMITED

ot

(1

sh

ot

0µ

s

s

)

0.5

1-Circuit Operation

0.1

1-Circuit Operation

0.05

1

5

10

VDS (V)

VDS (V)

10

(1

0.05

0.01 0.5

1m

ID (pulse) MAX

5

1m

10

RD

0.1

0.05

10

10 D TE

S

1

(TC=25°C)

10

s

)

1.5

20

ID (pulse) MAX

5

1.0

FET3 (TC=25°C)

20

1

0.1

0.5

VSD (V)

(TC=25°C)

20 10

0

1.5

VSD (V)

VSD (V)

ID (A)

0

50

100

200

0.01 0.5

1

5

10

50

100

200

VDS (V)

PT-Ta Characteristics 40 With Silicone Grease Natural Cooling All Circuits Operating

35

25

W ith fin

In ite

20

sin at

He

PT (W)

30

k

15 10 Without Heatsink

5 0 0

50

100

150

Ta (°C)

77

SLA5055

N-channel General purpose

External dimensions A

Absolute maximum ratings FET 1

Unit

FET 2

VDSS

150

V

VGSS

+20, –10

V

ID

±5

±7

A

ID (pulse)*

±10

±15

A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

PT

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

* : PW≤100µs, duty≤50%

■Equivalent circuit diagram 3

5

7

9

11

FET-1

FET-2

FET-2

FET-2

FET-2

2

4

6

8

10

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

FET 1

FET 2

FET 1

7

5 10V

4

5

6

4V

4V

4

5

2.8V

2.6V

2

2.6V

2 1

3

2.4V

2.4V

Tc= 125 °C 25° C –40°C

ID (A)

4 3

2

ID (A)

2.8V

3

ID (A)

(VDS=10V)

10V

1

1 VGS=2.2V

VGS=2.2V

0 0

2

4

6

8

0

0

10

0

2

4

VDS (V)

6

8

0

10

1

2

3

4

VGS (V)

VDS (V)

RDS(ON)-ID Characteristics (Typical) FET 1

FET 2

FET 2

200

500

5

(VDS=10V)

4V VGS=10V

400

ID (A)

(mΩ) RDS

100

200

3

2

50

125 °C 25 ° C –40°C

(ON)

(mΩ)

300

(ON)

RDS

4

150

4V VGS=10V

1

Tc=

100

0 0

1

2

3

4

0 0

5

0

1

2

3

4

5

6

7

RDS(ON)-TC Characteristics (Typical) FET 1

FET 2

(ID=2.5A)

1.0

(ID=3.5A)

500

(mΩ)

V 10 S=

RDS

VG

4V

300

V

10

(ON)

4V

RDS

(ON)

(Ω)

400

0.5

S=

VG

200

100

0 –40

0

50

TC (°C)

78

100

150

0 -40

0

50

TC (°C)

0

1

2

VGS (V)

ID (A)

ID (A)

100

150

3

4

SLA5055 Electrical characteristics

(Ta=25°C)

FET 1 Symbol

Specification min

V(BR)DSS

typ

max

150

FET 2 Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

typ

max

Unit

Conditions

V

ID=100µA, VGS=0V

150

IGSS

100

nA

VGS=20V

100

nA

VGS=20V

IDSS

100

µA

VDS=150V, VGS=0V

100

µA

VDS=150V, VGS=0V

2.0

V

VDS=10V, ID=250µA

1.0

S

VDS=10V, ID=2.5A

4

VTH

1.0

Re(yfs)

3

5.5

RDS(ON)

2.0 9

V

VDS=10V, ID=250µA

S

VDS=10V, ID=3.5A

330

440

mΩ

VGS=10V, ID=2.5A

150

200

mΩ

VGS=10V, ID=3.5A

370

480

mΩ

VGS=4V, ID=2.5A

170

230

mΩ

VGS=4V, ID=3.5A

Ciss

380

pF

VDS=10V,

870

pF

VDS=10V,

Coss

95

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

25

pF

VGS=0V

210

pF

VGS=0V

td (on)

25

ns

ID=2.5A,

25

ns

ID=3.5A,

tr

50

ns

VDD 70V,

55

ns

VDD 70V,

td (off)

55

ns

RL=28Ω,

80

ns

RL=20Ω, VGS=5V,

ns

VGS=5V, see Fig.3 on page 16.

50

ns

see Fig.3 on page 16.

V

ISD=5A, VGS=0V

1.0

V

ISD=7A, VGS=0V

ns

IF=±100mA

500

ns

IF=±100mA

tf

40

VSD

1.1

trr

180

1.5

1.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) FET 1 10

Safe Operating Area (SOA) FET 2

(VDS=10V)

FET 1

(VDS=10V)

20

ID (pulse) MAX

10 10 C 0° 5° 12

C

Re (yfs) (S)

Re (yfs) (S)

4 =– TC

25°C

5

°C 40 =– C 5° TC 12

5

S

ID (A)

5

25°C

(TC=25°C)

20

10 0µ s

ED IT M LI n) (o

1m s

10 m s

(1 sh ot )

RD

1 0.5

1 0.1

1

1-Circuit Operation

0.05 0.5

0.5

0.3 0.05

0.1

0.5

1

0.3 0.05

5

0.1

0.5

ID (A)

1

5

7

0.01 0.5

1

5

10

50

100

200

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

FET 1 1000

VGS=0V f=1MHz

FET 2 5000

FET 2

(TC=25°C)

20

10

10

500

Coss

50

10

m

s

RDS (on) LIMITED Ciss

500

0µ

s

s

(1

sh

ot

1000

ID (A)

100

Capacitance (pF)

Capacitance (pF)

Ciss

1m

ID (pulse) MAX

5

)

0.5

0.1 1-Circuit Operation Coss

100

0.05

Crss Crss

10

0

10

20

30

40

50 40

50

0

10

20

VDS (V)

30

40

50

0.01 0.5

1

5

VDS (V)

10

50

IDR-VSD Characteristics (Typical) FET 2

5

7

40

6

35

With Silicone Grease Natural Cooling All Circuits Operating

4

30

PT (W)

10 V

ts

4V

ea

IDR (A)

H

V

20

ite in

10

fin

3

25

In

4

ith

3

W

IDR (A)

5

15 VGS=0V

k

4V

VGS=0V

2

10

1

Without Heatsink

1

5 0

0

0 0

200

PT-Ta Characteristics

FET 1

2

100

VDS (V)

0.5

1.0

VSD (V)

1.5

0

0.5

1.0

VSD (V)

1.5

0

50

100

150

Ta (°C)

79

SLA5057

N-channel General purpose

External dimensions A

Absolute maximum ratings FET 1

Unit

FET 2

VDSS

200

V

VGSS

±20

V

ID

±7

A

ID(pulse) *

±15

A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

PT

SLA (15-pin)

(Ta=25°C)

Ratings

Symbol

•••

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

* : PW≤100µs, duty≤50%

■Equivalent circuit diagram 3

6

8

10

12

14

FET-1

FET-1

FET-2

FET-2

FET-2

FET-2

2

5

7

9

11

13

1

15

Pin 4 : NC

Electrical characteristics

(Ta=25°C)

FET 1 Symbol

Specification min

V(BR)DSS

80

typ

max

200

FET 2

Unit

Conditions

V

ID=100µA, VGS=0V

Specification min

typ

max

200

Unit

Conditions

V

ID=100µA, VGS=0V

IGSS

±100

nA

VGS=±20V

±100

nA

VGS=±20V

IDSS

100

µA

VDS=200V, VGS=0V

100

µA

VDS=200V, VGS=0V

4.0

V

VDS=10V, ID=1mA

2.0

4.0

V

VDS=10V, ID=1mA

S

VDS=10V, ID=3.5A

2.5

S

VDS=10V, ID=3.5A

mΩ

VGS=10V, ID=3.5A

270

mΩ

VGS=10V, ID=3.5A

pF

VDS=10V,

450

pF

VDS=10V,

VTH

2.0

Re(yfs)

4.5

6.5

RDS(ON)

130

Ciss

850

175

5.0 350

Coss

550

pF

f=1.0MHz,

280

pF

f=1.0MHz,

Crss

250

pF

VGS=0V

120

pF

VGS=0V

td (on)

20

ns

ID=3.5A,

20

ns

ID=3.5A,

tr

25

ns

VDD 100V,

30

ns

VDD 100V,

td (off)

90

ns

RL=28.6Ω,

55

ns

RL=28.6Ω,

tf

70

ns

VGS=10V, see Fig. 3 on page 16.

75

ns

VGS=10V, see Fig. 3 on page 16.

V

ISD=7A, VGS=0V

1.0

V

ISD=7A, VGS=0V

ns

IF=±100mA

450

ns

IF=±100mA

VSD

1.0

trr

500

1.5

1.5

SLA5058 Absolute maximum ratings

N-channel General purpose

Ratings

Unit

VDSS

150

V

VGSS

+20, –10

V

ID

±7A

A

ID (pulse)

±15 (PW≤1ms, Du≤1%)

A

EAS*

100

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c VISO Tch Tstg

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

1000 (Between fin and lead pin, AC)

Vrms

PT

150

°C

–40 to +150

°C

2

7

4

9

6

Symbol

min

V(BR)DSS IGSS IDSS VTH Re(yfs)

150

typ

(Ta=25°C)

max 100 100 2.0

1.0 4

9 150 170 870 320 210 25 55 80 50 1.0 500

RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram 5

SLA (12-pin)

Specification

* : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

3

•••

Electrical characteristics

(Ta=25°C)

Symbol

External dimensions A

200 230

1.5

Unit

Conditions

V nA µA V S mΩ mΩ pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 70V, RL=20Ω, VGS=5V, see Fig. 3 in page 16. ISD=7A, VGS=0V ISD=±100mA

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

7

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

7

200 4V

10V

6

4V

VGS=10V

4

4 3

2.6V

3

150

5

2.8V

ID (A)

ID (A)

5

RDS (ON) (mΩ)

6

100

2 2.4V

Tc=

1

1 VGS=2.2V

0 0

0 0

2

4

6

8

50

125 °C 25° C –40°C

2

1

2

3

4

0 0

VGS (V)

10

1

2

3

Re (yfs)-ID Characteristics (Typical)

RDS (ON)-TC Characteristics (Typical)

(VDS=10V)

=–

40

12

6

7

VGS=0V f=1MHz

5000

400

°C 5°

C

(mΩ)

TC

5

4V

300

(ON)

25°C

RDS

Re (yfs) (S)

10

5

Capacitance-VDS Characteristics (Typical)

(ID=3.5A)

500

Capacitance (pF)

20

4

ID (A)

VDS (V)

VG

V 10 S=

200

1000 Ciss

500

1 100

Coss

100

0.5 Crss

0.3 0.05

0.1

0.5

1

5

0 –40

7

0

50

100

IDR-VSD Characteristics (Typical)

10

20

Safe Operating Area (SOA)

1m

ID (pulse) MAX

5

10

RDS (on) LIMITED

30 ho

t)

25 20

sin

at

He

4V

0.5

ite

PT (W)

1s

With Silicone Grease Natural Cooling All Circuits Operating

35

fin

V

s(

s

s

In

10

m

0µ

ith W

ID (A)

5

TC=25°C 1-Circuit Operation

0.1

k

15 VGS=0V

50

PT-Ta Characteristics

10

2

40

40 10

6

4

30

VDS (V)

20

7

3

0

TC (°C)

ID (A)

IDR (A)

50 40

150

10

0.05

Without Heatsink

1

5

0 0

0.5

1.0

VSD (V)

1.5

0.01 0.5

0 1

5

10

VDS (V)

50

100

200

0

50

100

150

Ta (°C)

81

SLA5059

N-channel + P-channel 3-phase motor drive

External dimensions B

Absolute maximum ratings

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

20

V

ID

4

–4

A

ID(pulse)

8 (PW≤1ms, Duty≤25%)

–8 (PW≤1ms, Duty≤25%)

A

PT

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

5 (Ta=25°C, with all circuits operating, without heatsink)

W

30 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

4.17 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Tch

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 1

2

8

9

3

7

4

6

10 11

5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

P-ch

8

N-ch

–8

10V

(VDS=10V)

8

4.5V

Ta=40°C

–10V

25°C

6

–4.5V

–6

6

4 3.5V

ID (A)

125°C

ID (A)

ID (A)

4.0V –4.0V

–4

4

–3.6V

2

–3.2V

–2

VGS=3.0V

2

VGS=–2.7V

0 0

2

4

6

8

0 0

10

–2

–4

–6

–8

0

–10

0

2

4

VDS (V)

VDS (V)

6

8

10

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(Ta=25°C)

0.6

P-ch

(Ta=25°C)

0.6

(VDS=–10V)

–8 Tc= –40°C

VGS= –4V

0.5

0.5

25°C

–6

0.4

125°C

VGS= –10V

ID (A)

(Ω) (ON)

VGS=10V

0.3

RDS

0.3

RDS

(ON)

(Ω)

VGS=4V

0.4

0.2

0.2

0.1

0.1

–4

–2

0 0

2

4

6

0

8

0

0

–2

–4

ID (A)

–6

–8

RDS(ON)-TC Characteristics (Typical) ID=2A VGS=4V

N-ch 0.8

(Ω)

0.7

(ON)

0.6

RDS

0.5

RDS

(ON)

(Ω)

0.7

0.5

0.4

0.3

0.3

0

25

50

75

Tc (°C)

82

0.6

0.4

0.2 –40 –25

ID= –2A VGS=–10V

P-ch 0.8

100

125

150

0.2 –40 –25

0

25

50

75

Tc (°C)

0

–2

–4

–6

VGS (V)

ID (A)

100

125

150

–8

–10

SLA5059 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

typ

max

Unit

Conditions

V

ID=–100µA, VGS=0V

–60

IGSS

±10

µA

VGS=±20V

10

µA

VGS= 20V

IDSS

100

µA

VDS=60V, VGS=0V

–100

µA

VDS=–60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

–2.0

V

VDS=–10V, ID=–250µA

S

VDS=10V, ID=2A

S

VDS=–10V, ID=–2A

Ω

VGS=4V, ID=2A

Ω

VGS=–10V, ID=–2A

VTH

1.0

Re(yfs)

2.5

RDS(ON)

0.55

Ciss

150

pF

Coss

70

pF

Crss

15

pF

td(on)

12

ns

tr

40

ns

td(off)

40

ns

tf

25

ns

VSD

1.2

V

trr

75

ns

–1.0 3

0.55

VDS=10V, f=1.0MHz, VGS=0V

ID=2A, VDD 20V, RL=10Ω, VGS=5V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=2A, VGS=0V,

320

pF

130

pF

40

pF

20

ns

95

ns

70

ns

60

ns

–1.1

V

75

di/dt=100A/µs

VDS=–10V, f=1.0MHz, VGS=0V

ID=–2A, VDD –20V, RL=10Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–4A, VGS=0V ISD=–2A, VGS=0V,

ns

di/dt=100A/µs

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10

Safe Operating Area (SOA) P-ch

(VDS=10V)

N-ch

(VDS=–10V)

10

(Tc=25°C)

10

100µs

10ms

Tc= –40°C

1

25°C 125°C

RDS

1

ID (A)

Re (yfs) (S)

Re (yfs) (S)

1ms

Tc=–40°C 25°C

(on)

LIMITED

1

125°C

0.1 0.005

0.1

1

0.1 –0.005 –0.1

8

0.1

–1

–8

1

10

100

VDS (V)

ID (A)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

N-ch

VGS=0V f=1MHz

P-ch

P-ch

(Tc=25°C)

–10

1000

1000

100µs

Ciss

100 Coss

10

Crss

1ms 10ms

100

Coss

RDS

ID (A)

Capacitance (pF)

Capacitance (pF)

Ciss

Crss

0

10

20

30

40

LIMITED

–1

10

1

1

(ON)

0

50

–10

–20

–30

–40

–50

–0.1 –1

–10

VDS (V)

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch

8

–8

40 With Silicone Grease Natural Cooling All Circuits Operating

35 –6

4

30 25

PT (W)

IDR (A)

IDR (A)

6

–4

VGS=10V

VGS=–10V

4V

2

–2

0.5

1.0

VSD (V)

2.0

0 0.0

–0.5

–1.0

VSD (V)

–1.5

In fin ite

He at sin k

10

0V

1.5

W ith

20 15

–4V

0V

0 0.0

–100

VDS (V)

Without Heatsink

5

–2.0

0

0

50

100

150

Ta (°C)

83

SLA5060

N-channel + P-channel 3-phase motor drive

External dimensions A

Absolute maximum ratings

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

N channel

P channel

Unit

VDSS

60

–60

V

VGSS

±20

±20

V

ID

6

–6

A

ID(pulse)

10 (PW≤1ms, duty≤25%)

–10 (PW≤1ms, duty≤25%)

A

, W

5 (Ta=25°C, with all circuits operating, without heatsink)

PT

•••

35 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.57 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 1

2

8

9

3

7

4

10

6

11

5

12

Characteristic curves ID-VDS Characteristics (Typical) (Ta=25°C)

ID-VGS Characteristics (Typical) P-ch

---8

10V

8

–10V

3.7V

(Ta=25°C)

–4 V

4V

---10

8

4

3.0V

–3.5V

---6

6

ID (A)

ID (A)

3.3V

(VDS=10V)

–3.7V

3.5V

6

N-ch

10

–3.3V

---4

ID (A)

N-ch

10

Ta=125°C

4

–3.0V

25°C 2.7V

2

---2

0

VGS=–2.5V

0 0

2

4

6

8

–40°C

2

–2.7V

VGS=2.5V

10

0

---2

---4

---6

---8

0

---10

0

1

2

VDS (V)

VDS (V)

3

4

5

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch

(Ta=25°C)

0.30

(Ta=25°C)

0.30

P-ch

---10

(VDS=---10V)

---9

0.25

4V

0.15 VGS=10V

---8 ---7

VGS=–4V

0.20

---6

0.15

ID (A)

RDS (ON) (Ω)

0.20

RDS

(ON) (Ω)

0.25

–10V

---5 Ta=–40°C

---4

0.10

0.10

0.05

0.05

---3 25°C

---2

–40°C

---1 0 0

0

0 1

2

3

4

5

6

7

8

9

0

10

---2

---4

ID (A)

---6

---8

---10

RDS(ON)-TC Characteristics (Typical) (ID=3A)

N-ch

0.35 0.30

V

= GS

1

RDS (ON) (Ω)

RDS (ON) (Ω)

0.25 4V

0.20

0V

0.15

V –4

S=

V

–10

0.15 0.10

0.05

0.05

0

50

100

150

VG

0.20

0.10

TC (°C)

84

(ID=---3A)

0.30

0.25

0 ---40

P-ch

0.35

0 ---40

0

50

TC (°C)

0

---1

---2

---3

VGS (V)

ID (A)

100

150

---4

---5

SLA5060 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

IDSS VTH Re(yfs)

Conditions

Specification min

V

ID=100µA, VGS=0V

µA

VGS=±20V

100

µA

VDS=60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=3A

0.22

Ω

VGS=4V, ID=3A

1.0 5.5

RDS(ON)

Unit

±10

60

IGSS

P channel

Ciss

320

pF

Coss

160

pF

Crss

35

pF

td(on)

16

ns

tr

65

ns

td(off)

70

ns

tf

45

ns

VSD

1.2

V

trr

65

ns

typ

max

Unit

Conditions

V

ID=–100µA, VGS=0V

±10

µA

VGS=±20V

–100

µA

VDS=–60V, VGS=0V

–2.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–3A

0.22

Ω

VGS=–10V, ID=–3A

–60

–1.0 6

VDS=10V, f=1.0MHz, VGS=0V

ID=3A, VDD=20V, RL=6.67Ω, VGS=5V, see Fig. 3 on page 16. ISD=6A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs

790

pF

310

pF

90

pF

40

ns

110

ns

160

ns

80

ns

–1.1

V

85

ns

VDS=–10V, f=1.0MHz, VGS=0V

ID=–3A, VDD=20V, RL=6.67Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–6A, VGS=0V ISD=–3A, VGS=0V, di/dt=100A/µs

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

10

(VDS=10V)

Safe Operating Area (SOA) P-ch

10

TC=25°C SINGLE PULSE

N-ch

(VDS=---10V) 20

s 0µ

10

Ta=–40°C

10

0.1

1

IT M LI N)

ID (A)

(O S

RD

Re (yfs) (S)

Re (yfs) (S)

0.1 –0.05 –0.1

10

s

0.1 0.05

125°C

s m

125°C

25°C

1

10

25°C

1

1m

ED

Ta=–40°C

1

–1

0.1 0.1

–10

1

ID (A)

ID (A)

10

Capacitance-VDS Characteristics (Typical) VGS=0V

N-ch 2000

VGS=0V

P-ch

N-ch(Ta=25°C) f=1MHz

P-ch (Ta=25°C) f=1MHz

2000

100

VDS (V)

1000

TC=25°C SINGLE PULSE

P-ch

–20

100µs

–10 10

Coss

100

ED IT M LI (O S

RD

Coss

N)

ID (A)

Capacitance (pF)

Ciss

s

–1

100 Crss

Crss

10 0

10

10

20

30

40

50

0

–10

–20

VDS (V)

–30

–40

–50

–0.1 –0.1

–1

IDR-VSD Characteristics (Typical) (Ta=25°C)

–10

PT-Ta Characteristics P-ch

---10

(Ta=25°C)

40 With Silicon Grease Natural Cooling All Circuits Operating

35 8

–100

VDS (V)

VDS (V)

N-ch

10

---8

PT (W)

–1 S=

IDR (A)

0V

0V

15

k

VG

in

ts

---2

20

ea

2

V –4

H

---4

ite

4

fin

0V

S=

25

---6

In

VG

4V

ith

6

W

–1

0V

30

IDR (A)

Capacitance (pF)

m

1000

s 1m

Ciss

10 Without Heatsink

5 0

0

0.5

1.0

VSD (V)

1.5

0

0 0

---0.5

---1.0

VSD (V)

---1.5

0

50

100

150

Ta (°C)

85

SLA5061

N-channel+P-channel External dimensions A

3-phase motor drive

Absolute maximum ratings N channel

Unit

P channel

VDSS

60

–60

V

VGSS

±20

±20

V

ID

10

–6

A

ID(pulse)

15 (PW≤1ms, duty≤25%)

–15 (PW≤1ms, duty≤25%)

A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

40 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.125 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

PT

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

■Equivalent circuit diagram 1

2

8

9

3 4

7 6

10 11

5

12

Characteristic curves ID-VDS Characteristics (Typical) N-ch

15

(Ta=25°C) 4.0V

(Ta=25°C)

–14

12

12 10

–10

ID (A)

ID (A)

3.5V

8 3.3V

6

–3.5V

ID (A)

10

(VDS=10V)

14

–4.0V

–12

N-ch

15

–10V

10V

14

ID-VGS Characteristics (Typical) P-ch

–15

–8 –3.3V

8 6

–6

TC=125°C

4

3.0V

–4

–3.0V

4

2

VGS=2.7V

–2

VGS=–2.7V

2

0

0

2

4

6

8

0

10

0

–2

VDS (V)

–4

–6

25°C –40°C

–8

0

–10

0

1

2

3

4

5

VGS (V)

VDS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

Ta=25°C VGS=4V

P-ch 0.20

Ta=25°C VGS=–10V

0.18 0.16

–12

0.14

0.14

–10

0.08

0.12

ID (A)

0.10

0.10

0.06

0.04

0.04

0.02

0.02

–8 –6

0.08

0.06

(VDS=–10V)

–14

0.16

0.12

P-ch

–15

0.18

RDS (ON) (Ω)

RDS (ON) (Ω)

0.20

TC=125°C

–4 25°C

–2

0

0

1

2 3 4

5

0 0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15

6 7 8 9 10 11 12 13 14 15

RDS(ON)-TC Characteristics (Typical) ID=5A VGS=4V

N-ch 0.20

0.16

0.16

0.14

RDS (ON) (Ω)

RDS (ON) (Ω)

0.14 0.12 0.10 0.08

0.12 0.10 0.08

0.06

0.06

0.04

0.04 0.02

0.02 0

50

TC (°C)

86

ID=–5A VGS=–10V

0.18

0.18

0.00 ---40

P-ch

0.20

100

150

0.00 ---40

0

50

TC (°C)

–40°C

–1

–2

–3

VGS (V)

ID (A)

ID (A)

0 0

100

150

–4

–5

SLA5061 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

Specification min

V

ID=100µA, VGS=0V VGS=±20V

100

µA

VDS=60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=5A

0.14

Ω

VGS=4V, ID=5A

1.0

Re(yfs)

Conditions

µA

IDSS

8

RDS(ON)

Unit

±10

60

IGSS

VTH

P channel

Ciss

460

pF

Coss

225

pF

Crss

50

pF

td(on)

25

ns

tr

110

ns

td(off)

90

ns

tf

55

ns

VSD

1.15

V

trr

75

ns

typ

max

Unit

Conditions

V

ID=–100µA, VGS=0V

10

µA

VGS=±20V

–100

µA

VDS=–60V, VGS=0V

–2.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

0.14

Ω

VGS=–10V, ID=–5A

–60

–1.0 8.7

VDS=10V, f=1.0MHz, VGS=0V

ID=5A, VDD 20V, RL=4Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=5A, VGS=0V di/dt=100A/µs

1200

pF

440

pF

120

pF

50

ns

170

ns

180

ns

100

ns

–1.25

V

100

ns

VDS=–10V, f=1.0MHz, VGS=0V

ID=–5A, VDD 20V, RL=4Ω, VGS=–5V see Fig. 4 on page 16. ISD=–10A, VGS=0V ISD=–5A, VGS=0V di/dt=100A/µs

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

20

(VDS=10V)

Safe Operating Area (SOA) P-ch

20

10

TC=25°C SINGLE PULSE

N-ch

(VDS=–10V) 20

10

100µs

10

IT M LI

1

125°C

(O N)

RD

S

ID (A)

Re (yfs) (S)

TC=–40°C 25°C

s

Re (yfs) (S)

ED

s 1m

m

25°C

1

10

TC=–40°C

1

125°C

0.1 0.05

0.1

1

10

0.1 –0.05 –0.1

20

–1

ID (A)

–10

0.1 0.1

–20

ID (A)

1

10

100

VDS (V)

Capacitance-VDS Characteristics (Typical) 5000

VGS=0V

N-ch (Ta=25°C) f=1MHz

N-ch

VGS=0V (Ta=25°C) f=1MHz

P-ch

P-ch

5000

TC=25°C SINGLE PULSE

P-ch –20

100ms 1m

–10

100

ED IT M (O N)

LI

100

S

Coss

RD

ID (A)

Capacitance (pF)

Coss

s

Ciss

1000

m

–1

Crss

Crss

10

10

0

10

20

30

40

50

0

–10

–20

–30

–40

–50

–0.1 –0.1

(Ta=25°C)

40 35

–12 –11

30

10

–10

PT (W)

0V

–8 –7

–1 S=

VG

–4

–6

V

0V

IDR (A)

10

S=

VG

25

–9

20 15

–5

4

–4

10

3 2

–3 –2

5

1 0 0

–1 0

1.0

VSD (V)

1.5

0V

5

0.5

k sin at He

6

With Silicon Grease Natural Cooling All Circuits Operating

ite fin In

4V

V

–13

12 11

ith W

–14

13

8 7

–100

PT-Ta Characteristics P-ch

–15

14

9

–10

VDS (V)

IDR-VSD Characteristics (Typical) (Ta=25°C)

N-ch

15

–1

VDS (V)

VDS (V)

IDR (A)

Capacitance (pF)

s

10

Ciss

1000

Without Heatsink

0 0

–0.5

–1.0

VSD (V)

–1.5

0

50

100

150

Ta (°C)

87

SLA5064

N-channel+P-channel External dimensions A

3-phase motor drive

Absolute maximum ratings

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

±20

V

ID

10

–10

A

ID(pulse)

15 (PW≤1ms, duty≤25%)

–15 (PW≤1ms, duty≤25%)

A

PT

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

5 (Ta=25°C, with all circuits operating, without heatsink)

W

40 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

3.125 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 5

4

12

11

6 7

3 2

8

10 9

1

Characteristic curves ID-VDS Characteristics (Typical) –15

4.0V

–14

10V

14 12

–12

10

–10

ID (A)

ID (A)

3.3V

14 12 10

–3.5V

–8 –3.3V

–6

6

(VDS=10V)

15

–4.0V

3.5V

8

N-ch

(Ta=25°C)

ID (A)

15

ID-VGS Characteristics (Typical) P-ch

(Ta=25°C)

–10V

N-ch

8 6 TC=125°C

4

3.0V

–4

–3.0V

2

VGS=2.7V

–2

VGS=–2.7V

0

0

2

4

6

8

0

10

0

–2

–4

–6

–8

4

25°C –40°C

2 0 0

–10

1

2

3

4

5

VGS (V)

VDS (V)

VDS (V)

RDS(ON)-ID Characteristics (Typical) N-ch 0.20

Ta=25°C VGS=4V

P-ch 0.20

Ta=25°C VGS=–10V

P-ch

–15

(VDS=10V)

0.18

0.16

0.16

–12

0.14

0.14

–10

0.08

0.12

0.12

ID (A)

0.10

(ON) (Ω)

0.18

RDS

RDS

(ON) (Ω)

–14

0.10

–6

0.06

0.06

–4

0.04

0.04

0.02

0.02

0.00

0.00 0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15

0

1

2 3 4

5

6 7 8 9 10 11 12 13 14 15

TC=125°C

25°C

–2

RDS(ON)-TC Characteristics (Typical) ID=5A VGS=4V

N-ch

0.18

0.16

0.16

0.14

0.14

0.10

(ON) (Ω)

0.18

0.08

0.12

ID=–5A VGS=–10V

0.12 0.10 0.08

0.06

0.06

0.04

0.04 0.02

0.02 0.00 ---40

P-ch

0.20

RDS

RDS

(ON) (Ω)

0.20

0

50

TC (°C)

100

150

0.00 ---40

0

50

TC (°C)

0 0

–40°C

–1

–2

–3

VGS (V)

ID (A)

ID (A)

88

–8

0.08

100

150

–4

–5

SLA5064 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

IGSS

±10

µA

VGS=±20V

IDSS

100

µA

VDS=60V, VGS=0V

VTH

1.0

2.0

Re(yfs)

8

RDS(ON)

0.14

V

VDS=10V, ID=250µA

S

VDS=10V, ID=5A

Ω

VGS=4V, ID=5A

Ciss

460

pF

Coss

225

pF

Crss

50

pF

td(on)

25

ns

tr

110

ns

td(off)

90

ns

tf

55

ns

VSD

1.15

V

trr

75

typ

Unit

Conditions

V

ID=–100µA, VGS=0V

–60

–1.0

10

µA

VGS=±20V

–100

µA

VDS=–60V, VGS=0V

–2.0 8.7 0.14

VDS=10V, f=1.0MHz, VGS=0V

ID=5A, VDD 20V, RL=4Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=5A, VGS=0V,

ns

max

di/dt=100A/µs

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

Ω

VGS=–10V, ID=–5A

1200

pF

440

pF

120

pF

50

ns

170

ns

180

ns

100

ns

–1.25

V

100

ns

VDS=–10V, f=1.0MHz, VGS=0V

ID=–5A, VDD 20V, RL=4Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–10A, VGS=0V ISD=–5A, VGS=0V, di/dt=100A/µs

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

20

(VDS=10V)

Safe Operating Area (SOA) P-ch

20

(VDS=–10V)

10

100µs

10 s 1m

M LI

1

(O N) S

25°C 125°C

RD

ID(A)

Re (yfs) (S)

Re (yfs) (S)

TC=–40°C

s

25°C

1

m

TC=–40°C

10

IT

ED

10

TC=25°C SINGLE PULSE

N-ch

20

1

125°C

0.1 0.05

0.1

1

10

0.1 –0.05 –0.1

20

–1

ID (A)

–10

0.1 0.1

–20

1

ID (A)

10

100

VDS (V)

Capacitance-VDS Characteristics (Typical) VGS=0V

N-ch (Ta=25°C) f=1MHz

N-ch 5000

5000

VGS=0V

P-ch (Ta=25°C) f=1MHz

P-ch

TC=25°C SINGLE PULSE

P-ch –20

100µs 1m

–10

s

10

ED IT M (O N)

LI

100

S

Coss

RD

ID (A)

Capacitance (pF)

Coss

100

s

Ciss

1000

m

–1

Crss

Crss

10

10

0

10

20

30

40

50

0

–10

–20

–30

–40

–0.1 –0.1

–50

–14

13

–13

12 11

–12 –11

10

–10

–5

4

–4

3 2

–3 –2

1 0 0

–1 0

1.0

VSD (V)

1.5

30

PT (W)

0V –1

S= G

V

25

W

ith

In

fin

25

ite

He

at

20

–4

5

0.5

30

–8 –7 –6

40 35

–9

6

All Circuits Operating

(Ta=25°C)

sin

k

0V

0V

8 7

IDR (A)

10 VG

S=

9

4V

V

14

–100

PT-Ta Characteristics P-ch

–15

V

(Ta=25°C)

–10

VDS (V)

IDR-VSD Characteristics (Typical) N-ch

15

–1

VDS (V)

VDS (V)

IDR (A)

Capacitance (pF)

Ciss

1000

15 10 Without Heatsink

5 0

–0.5

–1.0

VSD (V)

–1.5

0

0

50

100

150

Ta (°C)

89

SLA5065 Absolute maximum ratings

N-channel 5-phase motor drive

External dimensions A

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VDSS VGSS ID

60 ±20 7

ID(pulse) EAS* IAS

15 (PW≤100µs, Du≤1%) 60 7

V V A A mJ A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

90 140 65 1.1 80

θ j-a θ j-c VISO Tch Tstg

4.8 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C, with all circuits operating, with infinite heatsink) 26 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

* : VDD=20V, L=20mH, ID=2A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 5

SLA (15-pin)

Electrical characteristics

(Ta=25°C)

Specification min typ max 60 ±100 100 1.0 2.0 6 0.1 660 310 75 30

PT

•••

Unit

Conditions

V nA µA V S Ω pF pF pF ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A,

ns ns ns V ns

VDD 20V, RL=5.7Ω, VGS=5V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=3.5A, di/dt=100A/µA

10

4

9 3

7

2

6 1

8

Pins 11, 12, 13, 14, 15 : NC

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

(Ta=25°C) 15 10V

3.8V

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

15 14

(Ta=25°C)

0.15

4.0V

12 3.5V

8 TC=125°C

6 3.0V

3

0.10

VGS=4V

10V

RDS

ID (A)

ID (A)

3.3V

(ON) (Ω)

10

10

0.05

25°C

4 2.7V

–40°C

2

VGS=2.5V

0

0

2

4

6

8

0 0

10

1

4

0 0

5

5

10

VGS (V)

Re(yfs)-ID Characteristics (Typical)

15

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

20 10

3

2

VDS (V)

Capacitance-VDS Characteristics (Typical)

(ID=3.5A)

0.20

VGS=0V (Ta=25°C) f=1MHz

5000

0.18

TC= –40°C

125°C

1

Capacitance (pF)

(ON) (Ω)

25°C

RDS

Re (yfs) (S)

0.16 0.14 0.12

V GS

=4V 10V

0.10 0.08 0.06

1000 Ciss

Coss

100

Crss

0.04 0.02

0.1 0.05 0.1

1

10

0 –40

20

0

50

ID (A)

IDR-VSD Characteristics (Typical) 15

20

20

LI M IT ED

s m 10

50

All Circuits Operating

30

N)

0V

40

PT-Ta Characteristics 40

100µs

10

V

30

VDS (V)

TC=25°C SINGLE PULSE

4V

10

10

s 1m

S=

0

Safe Operating Area (SOA)

(Ta=25°C)

VG

10

150

100

TC (°C)

RD

k

in

ts

PT (W)

20

a He

ID (A)

ite fin

1

In

IDR (A)

S

ith W

(O

10

5 10 Without Heatsink

0

0

0.5

1.0

VSD (V)

90

1.5

0.1 0.1

1

10

VDS (V)

100

0

0

50

100

Ta (°C)

150

SLA5068 Absolute maximum ratings

N-channel 5-phase motor drive

External dimensions A

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VDSS VGSS ID

60 ±20 7

ID(pulse) EAS* IAS

15 (PW≤100µs, Du≤1%) 60 7

V V A A mJ A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

90 140 65 1.1 80

θ j-a θ j-c VISO Tch Tstg

5 (Ta=25°C, with all circuits operating, without heatsink) W 50 (Tc=25°C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 2.5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

* : VDD=20V, L=20mH, ID=2A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 5

10

4

Unit

Conditions

V nA µA V S Ω pF pF pF ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A,

ns ns ns V ns

VDD 20V, RL=5.7Ω, VGS=5V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=3.5A, di/dt=100A/µA

12

11

13

3 2

SLA (15-pin)

Electrical characteristics

(Ta=25°C)

Specification min typ max 60 ±100 100 1.0 2.0 6 0.1 660 310 75 30

PT

•••

7

15

6

14

Pins 8, 9 : NC

1

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

(Ta=25°C)

(VDS=10V)

15

15 14

10V

3.8V

RDS(ON)-ID Characteristics (Typical) (Ta=25°C)

0.15

4.0V

12 3.5V

8 TC=125°C

6 3.0V

3

0.10

VGS=4V

10V

RDS

ID (A)

ID (A)

3.3V

(ON) (Ω)

10

10

0.05

25°C

4 2.7V

–40°C

2

VGS=2.5V

0

0

2

4

6

8

0 0

10

1

4

0 0

5

5

10

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

20

15

ID (A)

VGS (V)

Re(yfs)-ID Characteristics (Typical)

10

3

2

VDS (V)

Capacitance-VDS Characteristics (Typical)

(ID=3.5A)

0.20

VGS=0V (Ta=25°C) f=1MHz

5000

0.18

TC= –40°C

125°C

1

Capacitance (pF)

(ON) (Ω)

25°C

RDS

Re (yfs) (S)

0.16 0.14 0.12

V

=4V GS 10V

0.10 0.08 0.06

1000 Ciss

Coss

100

Crss

0.04 0.02 0.1 0.05

0.1

10

1

0 –40

20

0

50

ID (A)

IDR-VSD Characteristics (Typical) 15

20

20

LI M IT ED

V

50

40

N)

0V

4V

(O S

W

PT (W)

RD

ID (A)

50

All Circuits Operating

60

100µs

10

IDR (A)

40

PT-Ta Characteristics

TC=25°C SINGLE PULSE

10

30

VDS (V)

s 1m

10

10

s m 10

S=

0

Safe Operating Area (SOA)

(Ta=25°C)

VG

10

150

100

TC (°C)

1

ith

In

fin

ite

30

H

ea

ts

in

k

20

5

10 Without Heatsink

0

0

0.5

1.0

VSD (V)

1.5

0.1 0.1

1

10

VDS (V)

100

0

0

50

100

150

Ta (°C)

91

SLA5070

N-channel General purpose

External dimensions A

Absolute maximum ratings FET 1

Unit

FET 2

VDSS

150

V

VGSS

+20, –10

V

ID

±7

A

ID(pulse)

±15 (PW≤100µs, duty≤1%)

A

EAS*

100

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

W

60 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

2.08 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

PT

SLA (15-pin)

(Ta=25°C)

Ratings

Symbol

•••

* : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 3

6

8

10

12

14

FET-1

FET-1

FET-2

FET-2

FET-2

FET-2

2

5

7

9

11

13

1

15

Pin 4 : NC

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

FET 1

FET 1

2.6V

4

2.4V

3

6

4V

2.6V

3

2

2

2

1

2

4

6

8

1

VGS=2.2V

VGS=2.0V

0

0

10

0

VDS (V)

2

4

6

8

4

3

2.4V

2.2V

1

5

2.8V

4

–40°C

5

Tc=125 °C 25°C

6

5

10V

ID (A)

6

0

(VDS=10V)

7

7

3.0V

ID (A)

ID (A)

10V

7

FET 2

0

10

0

VDS (V)

1

2

3

4

VGS (V)

RDS(ON)-ID Characteristics (Typical) FET 1

FET 2

200

100

FET 2 7

(VDS=10V)

4V

6 VGS=10V

4V

VGS=10V

5

ID (A)

(ON) (mΩ)

80

150

100

RDS

RDS

(ON) (mΩ)

90

70

4 3 2 Tc= 125 °C 25° C –40°C

50

60

1 50

0

1

2

3

4

5

6

0 0

7

ID (A)

0

1

2

3

4

5

6

7

RDS(ON)-TC Characteristics (Typical) FET 1

200

(ID=3.5A)

FET 2

500

(ID=3.5A)

(ON) (mΩ)

V

10

100

VG

S=

RDS

RDS

(ON) (mΩ)

400 4V

4V

300

V 10

VG

S=

200

100

0 –40

0

50

TC (°C)

92

100

150

0 –40

0

50

TC (°C)

0

1

2

VGS (V)

ID (A)

100

150

3

4

SLA5070 Electrical characteristics

(Ta=25°C)

FET 1 Symbol

Specification min

V(BR)DSS

typ

max

Re(yfs)

7

Ciss

Specification min

V

ID=100µA, VGS=0V VGS=20V, –10V

100

µA

VDS=150V, VGS=0V

2.0

V

VDS=10V, ID=250µA

1.0

S

VDS=10V, ID=3.5A

4

80

105

mΩ

VGS=10V, ID=3.5A

85

115

mΩ pF

12

RDS(ON)

Conditions

nA

IDSS 1.0

Unit

±100

150

IGSS

VTH

FET 2

1900

typ

max

Unit

Conditions

V

ID=100µA, VGS=0V

±100

nA

VGS=20V, –10V

100

µA

VDS=150V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=3.5A

150

200

mΩ

VGS=10V, ID=3.5A

VGS=4V, ID=3.5A

170

230

mΩ

VGS=4V, ID=3.5A

VDS=10V,

870

pF

VDS=10V,

150

9

Coss

630

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

420

pF

VGS=0V

210

pF

VGS=0V

td (on)

35

ns

ID=3.5A

25

ns

ID=3.5A,

tr

70

ns

VDD 70V,

55

ns

VDD 70V,

td(off)

140

ns

RL=20Ω

80

ns

RL=20Ω,

tf

90

ns

VGS=5V, see Fig.3 on page 16.

50

ns

VGS=5V, see Fig.3 on page 16.

V

ISD=7A, VGS=0V

1.0

V

ISD=7A, VGS=0V

ns

IF=±100mA

500

ns

IF=±100mA

VSD

1.0

trr

620

1.5

1.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) FET 1

Safe Operating Area (SOA) FET 2

(VDS=10V)

100

FET 1

(VDS=10V)

20

10

10

TC

=–

40

°C C 25° °C 125

=– TC

5

1m

ID (pulse) MAX

5

10

RDS (on) LIMITED

m

s(

5°

12

C

ID (A)

10

Re (yfs) (S)

Re (yfs) (S)

10 °C 40

(TC=25°C)

20

25°C

1s

ho

0µ

s

s

t)

1 0.5

1

1-Circuit Operation

0.1

1

0.05 0.5 0.1 0.05

0.1

0.5

1

5

0.3 0.05

7

ID (A)

0.1

0.5

1

5

7

0.01 0.5

1

5

10

50

100

200

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

FET 1 10000

VGS=0V f=1MHz

FET 2 5000

FET 2

(TC=25°C)

20

10

10

500

s(

1s

ho

0µ

s

s

t)

0.5

1-Circuit Operation

0.1 Coss

100

100

m

RDS (on) LIMITED

Ciss

Coss Crss

10

1000

ID (A)

Capacitance (pF)

1000

0.05

Crss

50

0

10

20

30

40

50 40

50

VDS (V)

0

10

20

30

40

50

0.01 0.5

5

7

6

6

5

40

He

V

ite

3

k

4V

sin

at

10

fin

4

In

PT (W)

ith

IDR (A)

W

VGS=0V

200

With Silicon Grease Natural Cooling All Circuits Operating

5

3

100

60

10V 4V

50

PT-Ta Characteristics FET 2

7

10

VDS (V)

IDR-VSD Characteristics (Typical)

4

1

VDS (V)

FET 1

IDR (A)

Capacitance (pF)

Ciss

1m

ID (pulse) MAX

5

20 2

2

1

1

0

0

VGS=0V

Without Heatsink

5 0

0

0.5

1.0

VSD (V)

1.5

0 0

0.5

1.0

VSD (V)

1.5

50

100

150

Ta (°C)

93

SLA5072 Absolute maximum ratings

N-channel 3-phase DC motor 100V AC direct drive External dimensions A

Ratings

Unit

Symbol

VDSS VGSS ID

250 ±20 7 15 (PW≤1ms, Du≤1%) 55 7

V V A A mJ A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

PT

θ j-a θ j-c Tch Tstg

SLA (15-pin)

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse) EAS* IAS

•••

5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

* : VDD=25V, L=2mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

(Ta=25°C)

Specification min typ max 250 ±100 100 2.0 4.0 2.5 5.0 400 500 450 280 20 30 55 75 1.0 1.5 75

Unit

Conditions

V nA µA V S mΩ pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD=100V, RL=28.6Ω, VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=3.5A, VGS=0V, di/dt=100A/µs

■Equivalent circuit diagram 5

10

4

12

11

13

3 2

7 6

15 14

Pins 8,9 : NC

1

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

7

7

10V

5.5V

6

(VGS=10V)

0.5

6

0.4

5

4 TC=–40°C

RDS

5V

4

(ON) (Ω)

5

ID (A)

ID (A)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

6V

3

3

25°C

2

0.2

125°C

2

4.5V

0.3

0.1 1

1 VGS=4V

0

0

2

4

6

8

0 0

10

2

4

0 0

8

6

1

2

3

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

5

6

7

Capacitance-VDS Characteristics (Typical)

ID=3.5A VGS=10V

(VDS=10V)

10

4

ID (A)

VGS (V)

VDS (V)

1.0

VGS=0V f=1MHz

2000 1000

0.8

1

500

Capacitance (pF)

(ON) (Ω)

°C 40 =– 5°C 2 °C TC 5 12

RDS

Re (yfs) (S)

5

0.6

0.4

Coss

100 50

10

0.2

0.5 0.3 0.05

Ciss

5

0.1

0.5

1

5

0 –40

7

0

50

ID (A)

100

2 0

150

Crss

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(VGS=0V)

7

20 10 RDS

6

(O

N)

D ITE LIM

30

40

50

VDS (V)

TC (°C)

PT-Ta Characteristics

(TC=25°C)

ID (pulse) max

40

10

0m

With Silicon Grease Natural Cooling All Circuits Operating

35 s

5

20

He at sin

PT (W)

ite k

0.5

fin

ID (A)

25

In

3

1

30

1m s

ith

4

10 ms (1 sh ot)

W

IDR (A)

5

15

2 10

0.1

1

Without Heatsink

5

0.05 0 0

0.5

1.0

VSD (V)

94

1.5

0.03 3

0

5

10

50

VDS (V)

100

300

0

50

100

Ta (°C)

150

SLA5073 Absolute maximum ratings

N-channel 5-phase motor drive

Ratings

Unit

Symbol

VDSS VGSS ID

60 ±20 5

V V A A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

PT

θ j-a θ j-c VISO Tch Tstg

8 (PW≤1ms, Du≤25%) 5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

■Equivalent circuit diagram 5

10

4

SLA (15-pin)

(Ta=25°C)

Specification min typ max 60 ±100 100 1.0 2.0 5.5 0.3 320 160 35 16 65 70 45 1.2 65

Unit

Conditions

V nA µA V S Ω pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3A VGS=4V, ID=3A VDS=10V, f=1.0MHz, VGS=0V ID=3A, VDD 20V, RL=6.67Ω, VGS=5V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs

15

11

14

3 2

•••

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse)

External dimensions A

7 6

12 11

8

1

13

Characteristic curves ID-VDS Characteristics (Typical) (Ta=25°C) 10V

3.8V

0.25 6 (ON) (Ω)

3.5V

5

ID (A)

5 4 3 2

0 0

2

4

6

8

TC=125°C 25°C

VGS=2.7V

1

1

0.05

–40°C

0 0

10

1

2

3

4

1

2

3

4

5

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

7

8

Capacitance-VDS Characteristics (Typical)

ID=3A VGS=4V

(VDS=10V) 0.35

VGS=0V (Ta=25°C) f=1MHz

1000

0.30 °C –40 Ta=

Capacitance (pF)

Ciss

1

(ON) (Ω)

25°C

0.20

RDS

0.25

125°C

0.15 0.10

100 Coss

0.05 0.1 0.05

6

ID (A)

VGS (V)

10

0 0

5

VDS (V)

20

0.15

0.10

3.0V

2

0.20

RDS

3.3V

4 3

Re (yfs) (S)

Ta=25°C VGS=4V

0.30

7

6

ID (A)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

8

4V

8 7

ID-VGS Characteristics (Typical)

0.1

1

10

Crss

0.00 –40

0

50

ID (A)

100

10

150

0

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(Ta=25°C)

8

40

50

PT-Ta Characteristics

(TC=25°C, SINGLE PULSE)

10

30

VDS (V)

TC (°C)

40

100µs

With Silicon Grease Natural Cooling All Circuits Operating

35

s 1m

7 10

30

LIM

PT (W)

IT

25

(O

N)

1 RD

S

ID (A)

4

0V

VG

S=

10

5

4V

V

ED

s

IDR (A)

m

6

3

ith

10

1

5

0.5

1.0

VSD (V)

1.5

0.1 0.1

1

10

VDS (V)

100

0

In

fin

ite

He

at

15

2

0 0

W

20

sin

k

Without Heatsink

0

50

100

150

Ta (°C)

95

SLA5074 Absolute maximum ratings

N-channel 5-phase motor drive

Ratings

Unit

Symbol

VDSS VGSS ID

60 ±20 5

V V A A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

PT

θ j-a θ j-c VISO Tch Tstg

8 (PW≤1ms, Du≤25%) 4.8 (Ta=25°C, with all circuits operating, without heatsink) W 25 (Tc=25°C,with all circuits operating, with infinite heatsink) 26 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

■Equivalent circuit diagram 5

•••

SLA (15-pin)

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse)

External dimensions A

(Ta=25°C)

Specification min typ max 60 ±100 100 1.0 2.0 5.5 0.3 320 160 35 16 65 70 45 1.2 65

Unit

Conditions

V nA µA V S Ω pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3A VGS=4V, ID=3A VDS=10V, f=1.0MHz, VGS=0V ID=3A, VDD 20V, RL=6.67Ω, VGS=5V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs

10

4

9 3

7

2

6 1

8

Pins 11, 12, 13, 14, 15 : NC

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

(Ta=25°C)

(VDS=10V)

10V

7

8

4V

8

3.8V

0.25 6 (ON) (Ω)

3.5V

5 3.3V

4

4 3

3

2

0 0

2

4

6

8

TC=125°C 25°C

VGS=2.7V

1

1

0.05

–40°C

0 0

10

0.15

0.10

3.0V

2

0.20

RDS

ID (A)

5

1

2

3

4

0 0

5

1

2

3

4

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

8

VGS=0V (Ta=25°C) f=1MHz

1000

Capacitance (pF)

Ciss

1

(ON) (Ω)

25°C 125°C

0.20

RDS

0.25

0.15 0.10

100 Coss

0.05

0.1

1

10

Crss

0.00 –40

0

50

ID (A)

100

10

150

0

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(Ta=25°C)

40

50

PT-Ta Characteristics

(TC=25°C, SINGLE PULSE)

10

30

VDS (V)

TC (°C)

8

All Circuits Operating

30

100µs

1m

7

25

s

s m 10

PT (W)

IT LIM (O N)

1 RD

3

W ith

20

S

ID (A)

4

0V

10 S=

VG

4V

5

ED

V

6

IDR (A)

7

0.30 °C –40 Ta=

0.1 0.05

6

Capacitance-VDS Characteristics (Typical)

ID=3A VGS=4V

0.35

10

5

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

20

Re (yfs) (S)

Ta=25°C VGS=4V

0.30

7

6

ID (A)

RDS(ON)-ID Characteristics (Typical)

15

In fin ite

H ea ts in k

10

2

0 0

0.5

1.0

VSD (V)

96

Without Heatsink

5

1

1.5

0.1 0.1

1

10

VDS (V)

100

0 0

50

100

Ta (°C)

150

SLA5075 Absolute maximum ratings

N-channel 3-phase DC motor 200V AC direct drive External dimensions A

Ratings

Unit

Symbol

VDSS VGSS ID

500 ±30 ±5

ID(pulse) EAS*

±10 (PW≤1ms, Du≤1%) 45

V V A A mJ

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

θ j-a θ j-c Tch Tstg

SLA (15-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

5 (Ta=25°C, with all circuits operating, without heatsink) W 60 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 2.08 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

* : VDD=30V, L=3.4mH, ID=5A, unclamped, RG=50Ω, see Fig. E on page 15.

(Ta=25°C)

Specification min typ max 500 ±100 100 2.0 4.0 2.4 4.0 1.05 1.4 770 290 20 25 70 65 1.1 1.5 75

Unit

Conditions

V nA µA V S Ω pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±30V VDS=500V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, VDD 200V, RL=80Ω, VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=2.5A, di/dt=100A/µs

■Equivalent circuit diagram 5

10

4

12

11

13

3 2

7 6

15 14

Pins 8, 9 : NC

1

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=20V)

5

(VGS=10V)

2.0

5V

5

10V

4

4.5V

2

3

1.0

RDS

3

(ON) (Ω)

1.5

ID (A)

ID (A)

4

2 TC=125°C 25°C

1

VGS=3.5V

0 0

5

10

15

0 0

20

2

4

0 0

6

1

2

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

1000 Ciss

Capacitance (pF)

°C 25 C 5° 12

1

5

VGS=0V f=1MHz

2000

2.5

°C

2.0

(ON) (Ω)

40

1.5

RDS

=– Ta

4

Capacitance-VDS Characteristics (Typical)

ID=2.5A VGS=10V

3.0

5

3

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=20V)

10

Re (yfs) (S)

0.5

–40°C

1

4V

1.0

500

100 Coss

50

0.5

0.5 Crss

0.2 0.05

0.1

0.5

1

0 –40

5

0

50

ID (A)

100

10

150

0

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(Ta=25°C)

5

30

60 With Silicon Grease Natural Cooling All Circuits Operating

ID(pulse) max

10

0µ

40

s

PT (W)

1m

s

ite He

1

fin sin

at

ID (A)

10

N) (O

In

2

S

ith

RD

3

W

IDR (A)

ED IT M LI

5

50

PT-Ta Characteristics

(TC=25°C)

20

4

40

VDS (V)

TC (°C)

k

0.5

20

1 0.1

0 0

0.5

1.0

VSD (V)

1.5

0.05 3

Without Heatsink

5 0

5

10

50

VDS (V)

100

600

0

50

100

150

Ta (°C)

97

SLA5077 Absolute maximum ratings

N-channel General purpose

Ratings

Unit

Symbol

VDSS VGSS ID

150 +20, –10 ±10

ID(pulse) EAS* IAS

±40 (PW≤100µs, duty≤1%) 100 10

V V A A mJ A

V(BR)DSS IGSS IDSS VTH Re(yfs)

Ciss Coss Crss td(on) tr td(off) tf VSD trr

* : VDD=25V, L=1.7mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 3

6

7

4

1

Unit

Conditions

V nA µA V S mΩ mΩ pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=20V, –10V VDS=150V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 70V, RL=14Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V IF=±100mA

10

9

2

SLA (12-pin)

(Ta=25°C)

Specification min typ max 150 ±100 100 1.0 2.0 5 10 150 200 170 230 870 320 210 25 50 75 40 1.0 1.5 500

RDS(ON)

5 (Ta=25°C, with all circuits operating, without heatsink) W 50 (Tc=25°C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 2.5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

θ j-a θ j-c VISO Tch Tstg

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions A

12

5

8

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

7

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

7

200 4V

10V

6

6

4V

VGS=10V

150 2.8V

ID (A)

2.6V

3

4 3 2

2

50 125

°C 25 ° C –40°C

2.4V

1

1 VGS=2.2V

0

100

Tc=

ID (A)

4

(ON) (mΩ)

5

RDS

5

0

2

4

6

8

0 0

0

10

0

1

2

VDS (V)

3

4

1

2

3

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

20

4

5

6

7

ID (A)

VGS (V)

Capacitance-VDS Characteristics (Typical)

(ID=3.5A)

500

VGS=0V f=1MHz

5000

10 C 5°

(ON) (mΩ)

12

25°C

RDS

Re (yfs) (S)

40

Capacitance (pF)

400

°C

=– TC

5

4V

300

VG

1 S=

0V

200

1000 Ciss

500

1 Coss

100

100 0.5

Crss

0.3 0.05

0.1

0.5

1

5

50 40

0 –40

7

0

50

ID (A)

100

150

Safe Operating Area (SOA) 10

10 1m

ID (pulse) MAX

5

10

RDS (on) LIMITED

4V

10 V

ID (A)

4

VGS=0V

m

s

(1

sh

0µ

50

s

s

50

ot

)

40

0.5

W ith

30

In fin ite

H ea ts in k

20

1-Circuit Operation

0.1

40

All Circuits Operating

60

PT (W)

5

30

PT-Ta Characteristics

(TC=25°C)

6

IDR (A)

20

VDS (V)

20

7

2

10

TC (°C)

IDR-VSD Characteristics (Typical)

3

0

0.05

10

1

Without Heatsink

0 0

0.5

1.0

VSD (V)

98

1.5

0.01 0.5

0 1

5

10

VDS (V)

50

100

200

0

50

100

Ta (°C)

150

SLA5079 Absolute maximum ratings

P-channel 3-phase motor drive

Ratings

Unit

Symbol

VDSS VGSS ID

–60 ±20 –10

V V A A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

PT

θ j-a θ j-c VISO Tch Tstg

–15 (PW≤1ms, duty≤25%) 4.5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C,with all circuits operating, with infinite heatsink) 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

■Equivalent circuit diagram 1

2

5

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse)

External dimensions A

(Ta=25°C)

Specification min typ max –60 ±10 –100 –1.0 –2.0 8.7 0.14 1200 440 120 50 170 180 100 –1.25 100

Unit

Conditions

V nA µA V S Ω pF pF pF ns ns ns ns V ns

ID=–100µA, VGS=0V VGS=±20V VDS=–60V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–5A VGS=–10V, ID=–5A VDS=–10V, f=1.0MHz, VGS=0V ID=–5A, VDD –20V, RL=4Ω, VGS=–5V, RG=50Ω, see Fig. 4 on page 16. ISD=–10A, VGS=0V ISD=–5A, di/dt=100A/µs

12

6

11

3

7

10

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

(Ta=25°C)

(VDS=–10V)

–15

–3.3V

(ON) (Ω)

–3.5V

–8

0.16

25°C

–8

–6

–6

–4

–3.0V

–4

–2

VGS=–2.7V

–2

RDS

ID (A)

–10

ID (A)

–12

–10

–40 °C

–14

–4.0V

–12

Ta=25°C VGS=–10V

0.20

TC=12 5°C

–14

–10V

–15

RDS(ON)-ID Characteristics (Typical)

0.12

0.08

0.04

0 0

–2

–4

–6

–8

0 0

–10

–1

–2

Re(yfs)-ID Characteristics (Typical)

–4

0

–2

–4

–6

–8

–10

–12

–14 –15

ID (A)

Capacitance-VDS Characteristics (Typical)

ID=–5A VGS=–10V

0.20

VGS=0V (Ta=25°C) f=1MHz

3000

0.18

–10

Ciss

0°C –4

1000

Capacitance (pF)

0.16

Tc=

(ON) (Ω)

0.14 25°C

125°C

RDS

Re (yfs) (S)

0

–5

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

–20

–3

VGS (V)

VDS (V)

–1

0.12 0.10 0.08 0.06

Coss

100 Crss

0.04 0.02 –0.1

–0.1

–1

0 –40

–10 –20

0

50

ID (A)

100

10

150

–0

–10

–20

IDR-VSD Characteristics (Typical) (Ta=25°C)

Safe Operating Area (SOA)

–40

–50

PT-Ta Characteristics

(TC=25°C, SINGLE PULSE)

–20

100µs

35

s

–10 s m 10

30

LI M

IT

ED

–12

All Circuits Operating

40

1m

–15 –14

–30

VDS (V)

TC (°C)

S

PT (W)

(O N)

25

RD

ID (A) 0V

–6

S= –1 0V –4 V

–8

VG

IDR (A)

–10

–1

In fin ite

15

–4

He at sin k

10 5 Without Heatsink

–2 0 0.0

W ith

20

–0.5

–1.0

VSD (V)

–1.5

–0.1 –0.1

0 –1

–10

VDS (V)

–100

0

50

100

150

Ta (°C)

99

SLA5080 Absolute maximum ratings

N-channel 3-phase motor drive

Ratings

Unit

Symbol

VDSS VGSS ID

60 ±20 10

V V A A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

PT

θ j-a θ j-c VISO Tch Tstg

15 (PW≤1ms, Du≤25%) 4.5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C,with all circuits operating, with infinite heatsink) 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

■Equivalent circuit diagram 3

7

2

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse)

External dimensions A

(Ta=25°C)

Specification min typ max 60 ±10 100 1.0 2.0 8.0 0.14 460 225 50 25 110 90 55 1.15 75

Unit

Conditions

V µA µA V S Ω pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 20V, RL=4Ω, VGS=5V, see Fig. 4 on page 16. ISD=10A, VGS=0V ISD=5A, di/dt=100A/µs

10

6

11

1

5

12

Characteristic curves ID-VDS Characteristics (Typical) (Ta=25°C)

12

10

10

ID (A)

3.5V

3.3V

0.16

8 6

6 4

3.0V

4

2

VGS=2.7V

2

TC=25°C

2

4

6

8

0

10

0.08

–40°C

0

1

2

3

4

0 0

5

2

4

6

8

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical) 20

12

10

14 15

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

Capacitance-VDS Characteristics (Typical)

ID=5A VGS=4V

0.20

VGS=0V (Ta=25°C) f=1MHz

2000

0.18

10

0.12

0.04

25°C

0 0

Ta=25°C VGS=4V

0.20

(ON) (Ω)

10V

12

8

(VDS=20V)

15 14

4.0V

RDS(ON)-ID Characteristics (Typical)

RDS

15 14

ID (A)

ID-VGS Characteristics (Typical)

1000

TC=–40°C

Capacitance (pF)

0.16

(ON) (Ω)

Re (yfs) (S)

0.14 25°C

RDS

125°C

1

0.12 0.10 0.08 0.06

Ciss

Coss

100

0.04

Crss

0.02

0.1 0.05

0.1

1

10

0 –40

20

0

50

ID (A)

10

150

100

0

10

20

TC (°C)

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(Ta=25°C)

40

50

PT-Ta Characteristics

20

All Circuits Operating

40

10

15

30

VDS (V)

0µ s

10

12

m

IT

ED

30

)L

25

RD

S

PT (W)

(O N

ID (A)

0V

9

IM

4V

VG

S=

10 V

s

IDR (A)

35

s 1m

10

1

6

W

20

ith

In

fin

ite

15

He

at

sin

k

10 3

0

0

0.5

1.0

VSD (V)

100

5 Without Heatsink

TC=25°C Single Pulse

1.5

0.1 0.1

1

10

VDS (V)

100

0 0

50

100

Ta (°C)

150

SLA5081

N-channel General purpose

External dimensions A

Absolute maximum ratings FET 1

Unit

FET 2

VDSS

150

V

VGSS

+20, –10

V

ID

±7

A

ID (pulse)*1

±15

A

100

mJ

5 (Ta=25°C, with all circuits operating, without heatsink)

W

EAS*2 PT

SLA (15-pin)

(Ta=25°C)

Ratings

Symbol

•••

47 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

2.66 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

*1 : PW≤100µs, duty≤1% *2 : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 3

8

10

12

FET1

FET2

FET2

FET2

2

7

9

11

14 FET2 13

1

15

Pins 4, 5, 6 : NC

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

FET 1

FET 1

7

3.0V

7

2.6V

4

2.4V

3

6

4V

4 2.6V

3

2

3

2.4V

1

1 VGS=2.2V

VGS=2.0V

0

0

2

4

6

8

4

2

2 2.2V

1

5

2.8V

0

0

10

0

2

4

VDS (V)

6

8

10

0

1

C

5

–40°

5

10V

TC=1 25°C 25°C

6

ID (A)

6

ID (A)

ID (A)

10V

7

FET 2

2

3

4

VGS (V)

VDS (V)

RDS(ON)-ID Characteristics (Typical) FET 1

FET 2

FET 2

200

100

(VDS=10V)

7 4V

4V

80

VGS=10V

5

ID (A)

100

3 2

50

125

60

0

1

2

3

4

5

6

0 0

7

1

2

ID (A)

3

4

5

6

7

ID (A)

(ID=3.5A)

FET 2

500

(ID=3.5A)

(ON) (mΩ)

V 10

100

VG

S=

RDS

RDS

(ON) (mΩ)

400 4V

4V

300

S=

V 10

VG

200

100

0 –40

0

50

TC (°C)

102

100

150

0 –40

0

50

TC (°C)

0 0

1

2

VGS (V)

RDS(ON)-TC Characteristics (Typical) FET 1

200

Tc=

1 50

–40°C

70

4

°C 25° C

(ON) (mΩ)

150

RDS

RDS

(ON) (mΩ)

6 VGS=10V

90

100

150

3

4

SLA5081 Electrical characteristics

(Ta=25°C)

FET 1 Symbol

Specification min

V(BR)DSS

typ

max

150

FET 2 Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

typ

max

150

Unit

Conditions

V

ID=100µA, VGS=0V

IGSS

±100

nA

VGS=20V, –10V

±100

nA

VGS=20V, –10V

IDSS

100

µA

VDS=150V, VGS=0V

100

µA

VDS=150V, VGS=0V

VTH

1.0

Re(yfs)

7

2.0 12

RDS(ON)

V

VDS=10V, ID=250µA

1.0

S

VDS=10V, ID=3.5A

4

2.0 9

V

VDS=10V, ID=250µA

S

VDS=10V, ID=3.5A

80

105

mΩ

VGS=10V, ID=3.5A

150

200

mΩ

VGS=10V, ID=3.5A

85

115

mΩ

VGS=4V, ID=3.5A

170

230

mΩ

VGS=4V, ID=3.5A

Ciss

1600

pF

VDS=10V,

870

pF

VDS=10V

Coss

380

pF

f=1.0MHz,

320

pF

f=1.0MHz

Crss

90

pF

VGS=0V

210

pF

VGS=0V

td (on)

35

ns

ID=3.5A,

25

ns

ID=3.5A

tr

70

ns

VDD 70V,

55

ns

VDD 70V

td (off)

125

ns

RL=20Ω,

80

ns

RL=20Ω

ns

VGS=5V, see Fig.3 on page 16.

50

ns

VGS=5V, see Fig.3 on page 16.

V

ISD=7A, VGS=0V

1.0

V

ISD=7A, VGS=0V

ns

IF=±100mA

500

ns

IF=±100mA

tf

90

VSD

1.0

trr

320

1.5

1.5

Characteristic curves Re(yfs)-ID Characteristics (Typical)

Safe Operating Area (SOA)

FET 1

FET 2 (VDS=10V)

100

FET 1 (VDS=10V)

20

(TC=25°C)

20

10 0µ s

10

T

C 25° °C 125

=– TC

5

10 m s( 1s ho t)

RDS (on) LIMITED

C 5°

12

1

ID (A)

10

5

°C 40

°C

40

Re (yfs) (S)

Re (yfs) (S)

10

– C=

1m s

ID (pulse) MAX

25°C

0.5

1

1-Circuit Operation

0.1

1

0.05

0.5 0.1 0.05

0.1

1

0.3 0.05

7

ID (A)

0.1

0.5

1

5

7

0.01 0.5

1

5

10

50

100

200

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

FET 1 10000

FET 2

FET 2

VGS=0V f=1MHz

5000

(TC=25°C)

20

10

10 10

m

RDS (on) LIMITED

s(

1s

1000 Ciss

500

ID (A)

Capacitance (pF)

1000

s

t)

1-Circuit Operation

0.1 Coss

100

Crss

ho

0µ

s

0.5

Coss

0.05

100 Crss

50

0

10

20

30

40

50 40

50

0

10

20

VDS (V)

30

40

50

0.01 0.5

FET 1

7

1

5

10

50

100

200

VDS (V)

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics FET 2

7

All Circuits Operating

50

6

6

40 5

5

V

30 ite fin

3

In

PT (W)

4 10

VGS=0V

3

4V

4V

4

ith W

IDR (A)

10V

IDR (A)

Capacitance (pF)

Ciss

1m

ID (pulse) MAX

5

1

0

0

VGS=0V

k in

1

s at

2

He

20 2

10 Without Heatsink

0

0.5

1.0

VSD (V)

1.5

0

0.5

1.0

VSD (V)

1.5

0 0

50

100

150

Ta (°C)

103

SLA5085 Absolute maximum ratings

N-channel General purpose

Ratings

Unit

Symbol

VDSS VGSS ID

60 ±20 10

ID(pulse) EAS*

10 (PW≤1ms, duty≤25%) 30

V V A A mJ

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

θ j-a θ j-c VISO Tch Tstg

5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

* : VDD=40V, L=20mH, ID=1A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 3

2

5

7

4

6

9

•••

SLA (12-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions A

(Ta=25°C)

Specification min typ max 60 ±100 100 1.0 2.0 3.7 5.5 0.16 0.22 320 160 35 16 65 70 45 1.05 1.5 65

Unit

Conditions

V nA µA V S Ω pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3A VGS=4V, ID=3A VDS=10V, f=1.0MHz, VGS=0V ID=3A, VDD 20V, RL=6.67Ω, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs

11

10

8

1

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

(Ta=25°C)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

10

(Ta=25°C)

0.30

4V

10 10V

3.7V

0.25

8

8

4

3.0V

4

6

0.20 4V

0.15

VGS=10V

RDS

3.3V

ID (A)

ID (A)

6

(ON) (Ω)

3.5V

Ta=125°C

0.10 25°C

2.7V

2

2

0

0 0

2

4

6

8

0.05

–40°C

VGS=2.5V

10

0

1

2

3

4

0

5

0

2

4

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

50

6

8

10

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V (Ta=25°C) f=1MHz

(ID=3A)

0.35

1000

0.30

25°C

1

0.20 0.15

125°C

VG

S=

10

Capacitance (pF)

°C –40

(ON) (Ω)

0.25 Ta=

RDS

Re (yfs) (S)

10

V 10V

0.10

Ciss

Coss

100

0.05 0.1 0.05

0.1

10

1

Crss

0.00 –40

0

50

ID (A)

10

150

100

0

10

20

TC (°C)

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(Ta=25°C)

10

30

40

50

VDS (V)

PT-Ta Characteristics

20

All Circuits Operating

40 10

35

s

0µ

10 8 LI M IT ED

PT (W)

(O

N)

10 V

RD

S

t)

ID (A)

ho

0V

1s

S=

s(

4V

m

VG

s

4

10

6

1m

IDR (A)

30

1

25 W

20 15

ith

Inf

ini

te

He

ats

ink

10 2

0

1-Circuit Operation

0

0.5

1.0

VSD (V)

104

1.5

0.1 0.1

Without Heatsink

5

TC=25°C

0

1

10

VDS (V)

100

0

50

100

Ta (°C)

150

SLA5086

P-channel

Absolute maximum ratings

(Ta=25°C)

General purpose

Ratings

Unit

Symbol

VDSS VGSS ID

–60 ±20 –5

V V A A

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

PT

θ j-a θ j-c VISO Tch Tstg

–10 (PW≤1ms, duty≤25%) 5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C

■Equivalent circuit diagram 1

2

•••

SLA (12-pin)

Electrical characteristics

Symbol

ID(pulse)

External dimensions A

(Ta=25°C)

Specification min typ max –60 ±100 –100 –1.0 –2.0 4 6 0.14 0.22 790 310 90 40 110 160 80 –1.0 –1.5 85

Unit

Conditions

V nA µA V S Ω pF pF pF ns ns ns ns V ns

ID=–100µA, VGS=0V VGS=±20V VDS=–60V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–3A VGS=–10V, ID=–3A VDS=–10V, f=1.0MHz, VGS=0V ID=–3A, VDD –20V, RL=6.67Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–5A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs

12

4

6

3

8

5

10

7

9

11

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

(Ta=25°C)

RDS(ON)-ID Characteristics (Typical)

(VDS=–10V)

–10

–3.7V

0.25

–8

–8

–4V

–4

–4

Ta=125°C

–3.0V

VGS=–10V

0.15

0.10

25°C

–2

–2.7V

–2

0.20

RDS

–6

ID (A)

ID (A)

–3.3V

(ON) (Ω)

–3.5V

–6

(Ta=25°C)

0.30

–4 V

–10V

–10

0.05

VGS=–2.5V –40°C

0 0

0 –2

–4

–6

–8

–10

0

–1

–2

–3

–4

0 0

–5

–2

–4

–6

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=–10V)

50

–8

–10

ID (A)

Capacitance-VDS Characteristics (Typical)

(ID=–3A)

0.35

VGS=0V (Ta=25°C) f=1MHz

5000

0.30 0.25

°C

25°C 125°C

1

VG

0.20 0.15

S=

–4

V

–10

Capacitance (pF)

–40

(ON) (Ω)

Ta =

RDS

Re (yfs) (S)

10

V

0.10

1000

Ciss

Coss

100 Crss

0.05 0.1 –0.05

–0.1

10

0 –40

–10

–1

0

50

ID (A)

IDR-VSD Characteristics (Typical) (Ta=25°C)

–10

0

Safe Operating Area (SOA)

PT (W)

IM IT ED

(O N) L S

RD

ID (A)

–1 0V S=

–50

All Circuits Operating

30

s

–1

–40

35

1m

s m 10

4V

–30

PT-Ta Characteristics

100µs

–6

VG

–20

40

–20 –10

–

–10

VDS (V)

–8

–4

25 W

ith

20

In

fin

ite

He

at

15

sin

k

0V

IDR (A)

150

100

TC (°C)

10 –2

0

0

–0.5

–1.0

VSD (V)

–1.5

–0.1 –0.1

Without Heatsink

5

TC=25°C 1-Circuit Operation

0 –1

–10

VDS (V)

–100

0

50

100

150

Ta (°C)

105

SLA5088

N-channel General purpose

External dimensions A

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

FET 1

Unit

FET 2

VDSS

150

V

VGSS

+20, –10

V

ID

±5

±7

A

ID (pulse)*1

±10

±15

A

5 (Ta=25°C, with all circuits operating, without heatsink)

W

43 (Tc=25°C, with all circuits operating, with infinite heatsink)

W

θ j-a

25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

2.91 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°C

Tstg

–40 to +150

°C

PT

SLA (15-pin)

•••

* : PW≤100µs, duty≤50%

■Equivalent circuit diagram 3

8

10

12

FET1

FET2

FET2

FET2

2

7

9

11

14 FET2 13

1

15

Pins 4, 5, 6 : NC

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

FET 1

FET 2

FET 1

7

10V

4

10V

6

4V

6

4V

5

ID (A)

ID (A)

2.8V

3

5

2.8V

4 2.6V

3

2

(VDS=10V)

7

ID (A)

5

4 3

2.6V

2

2

2.4V

125 °C 2 5° C –40°C

2.4V

1

1

Tc=

1

VGS=2.2V

VGS=2.2V

0

0

0

0

2

4

6

8

0

10

2

4

6

8

0

10

1

VDS (V)

VDS (V)

2

3

4

VGS (V)

RDS(ON)-ID Characteristics (Typical) FET 1

FET 2

FET 2

200

500

(VDS=10V)

5 4V VGS=10V

3

2

1 25 °C 25 ° C

50 1

T c=

100

0

0

1

2

3

4

0 0

5

1

2

3

4

5

6

7

RDS(ON)-TC Characteristics (Typical) FET 1

FET 2

(ID=2.5A)

1.0

(ID=3.5A)

500

(ON) (mΩ)

4V V 10

= GS

RDS

V

RDS

(ON) (Ω)

400

0.5

4V

300

V

10

S=

VG

200

100

0 –40

0

50

TC (°C)

106

100

150

0 –40

0

50

TC (°C)

0 0

1

2

VGS (V)

ID (A)

ID (A)

–40°C

(ON) (mΩ)

200

100

RDS

(ON) (mΩ)

RDS

VGS=10V

300

4

150

4V

ID (A)

400

100

150

3

4

SLA5088 Electrical characteristics

(Ta=25°C)

FET 1 Symbol

Specification min

V(BR)DSS

typ

max

150

FET 2 Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

typ

max

Unit

Conditions

V

ID=100µA, VGS=0V

150

IGSS

100

nA

VGS=20V

100

nA

VGS=20V

IDSS

100

µA

VDS=150V, VGS=0V

100

µA

VDS=150V, VGS=0V

2.0

V

VDS=10V, ID=250µA

1.0

S

VDS=10V, ID=2.5A

4

VTH

1.0

Re(yfs)

3

5.5

RDS(ON)

2.0 9

V

VDS=10V, ID=250µA

S

VDS=10V, ID=3.5A

330

440

mΩ

VGS=10V, ID=2.5A

150

200

mΩ

VGS=10V, ID=3.5A

370

480

mΩ

VGS=4V, ID=2.5A

170

230

mΩ

VGS=4V, ID=3.5A

Ciss

380

pF

VDS=10V,

870

pF

VDS=10V,

Coss

95

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

25

pF

VGS=0V

210

pF

VGS=0V

td (on)

25

ns

ID=2.5A,

25

ns

ID=3.5A,

tr

50

ns

VDD 70V,

55

ns

VDD 70V,

td (off)

55

ns

RL=28Ω,

80

ns

RL=20Ω,

ns

VGS=5V, see Fig.3 on page 16.

50

ns

VGS=5V, see Fig.3 on page 16.

V

ISD=5A, VGS=0V

1.0

V

ISD=7A, VGS=0V

ns

IF=±100mA

500

ns

IF=±100mA

tf

40

VSD

1.1

trr

180

1.5

1.5

Characteristic curves Re(yfs)-ID Characteristics (Typical)

Safe Operating Area (SOA)

FET 1

FET 2 (VDS=10V)

10

FET 1 (VDS=10V)

20

(TC=25°C)

20 ID (pulse) MAX

10

10 –4

0°

C 12

0°

C 5°

25°C

–4

C=

T

5

5

C

M

C 5°

12

S

) on

LI

IT

ED 10

1m m

s(

1s

(

RD

1

25°C

ID (A)

Re (yfs) (S)

T

C=

Re (yfs) (S)

5

10

0µ

s

s

ho

t)

0.5

1

1-Circuit Operation

0.1

1

0.05 0.5

0.5

0.3 0.05

0.1

0.5

1

0.3 0.05

5

0.1

0.5

ID (A)

1

5

0.01 0.5

7

1

5

10

50

100

200

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

FET 1 1000

VGS=0V f=1MHz

FET 2 5000

FET 2

(TC=25°C)

20

10

0µ

10

s

500

Coss

50

10

20

30

40

s

RDS (on) LIMITED

500

(1

sh

ot

)

0.5

1-Circuit Operation

0.1 Coss

Crss

0

m

s

Ciss

100

10

10

1000

ID (A)

Capacitance (pF)

Capacitance (pF)

100

ID (pulse) MAX

5

Ciss

1m

0.05

Crss

50 40

50

0

10

20

VDS (V)

30

40

0.01 0.5

50

1

5

IDR-VSD Characteristics (Typical)

50

100

200

PT-Ta Characteristics

FET 1

FET 2

5

10

VDS (V)

VDS (V)

All Circuits Operating

50

7 6

40

4 5

PT (W)

10 V

IDR (A)

4V

20

nk

10 V

IDR (A)

si

t ea

H

3

VGS=0V

ite

4V

30

fin In

2

4

ith

W

3

VGS=0V

2

10

1 1

Without Heatsink

0

0 0

0.5

1.0

VSD (V)

1.5

0

0.5

1.0

VSD (V)

1.5

0

0

50

100

150

Ta (°C)

107

SLA6012

PNP + NPN Darlington External dimensions A

3-phase motor drive

Absolute maximum ratings

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

4

–4

A

IB

0.5

–0.5

A

5 (Ta=25°C)

PT

W

25 (Tc=25°C)

VISO

•••

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j–c

5

°C/W

■Equivalent circuit diagram 1 R2 R3

2

4

8

9

3

7

6

11

10

R1

12

5

R1: 3kΩ typ R2: 2kΩ typ R3: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

6

NPN

mA

–1.8

IB=– 2.2m A

1.0mA

A –1.5m

5 –1.2m

0.6mA

4

–1.0mA –0.9mA

IC (A)

IC (A)

–4 0.4mA

A

4

IC (A)

IB =4 .0m A

mA 2.0

(VCE=4V)

6

–6

–0.8mA

3

0.3mA

1

0 0

2

4

0 0

6

VCE (V)

–2

–4

0 0

–6

–30°C

2

–2

Ta= 125 °C 75°C 25°C

2

1

2

3

VBE (V)

VCE (V)

hFE-IC Characteristics (Typical) NPN

PNP (VCE=4V)

20000 10000

PNP (VCE=–4V)

20000

(VCE=–4V)

–6

10000

typ

5000

5000

1000

1000

–5 typ

500

IC (A)

hFE

hFE

–4

500

–3

100

100 50 30 0.03 0.05

0.1

0.5

1

50 30 –0.03 –0.05

56

–1

–0.1

–0.5

–1

–5 –6

IC (A)

IC (A)

hFE-IC Temperature Characteristics (Typical) NPN

PNP (VCE=4V)

20000

10000

10000

5000 °C 25 C ° =1 75 °C Ta 25 C 0° –3

hFE

hFE

5000

1000

500

100

100

0.1

0.5

IC (A)

108

1000

500

50 30 0.03 0.05

(VCE=–4V)

20000

1

56

50 30 –0.03 –0.05

Ta

°C 25 =1

75°C 25°C C 0° –3

–0.1

–0.5

IC (A)

–1

–5 –6

0 0

Ta=1 25°C 75°C 25°C –30°C

–2

–1

VBE (V)

–2

–3

SLA6012 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

2000

VCE(sat)

Specification

Unit

Conditions

10

µA

VCB=60V

10

µA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=3A

2000

max

ICBO

PNP

1.5

V

min

typ

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–3A

IC=3A, IB=6mA

–1.5

V

IC=–3A, IB=–6mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

20

–3

IC=4A IC=2A

1

θj–a (°C / W)

2

VCE (sat) (V)

VCE (sat) (V)

10

–2

IC=–4A

5

IC=–2A

–1

IC=–1A

IC=1A

1

0 0.1

0.5

1

5

10

50

0.5

0 –0.3 –0.5

100

IB (mA)

–1

–5

–10

–50 –100

1

5

(IC / IB=1000)

25°C 75°C

PT (W)

15 10

Ta=–30°C

50

5

125°C

5

0 –0.5

6

10

10 –1

IC (A)

0×

k

75°C

tsin

25°C

ea

–3 0° C

–2

eH

1

init

VCE (sat) (V)

Inf

Ta=1 25°C

20

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

ith

2

25

W

VCE (sat) (V)

PT-Ta Characteristics

–3

1

500 1000

PNP (IC / IB=1000)

0 0.5

50 100

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN 3

10

IB (mA)

–1

–5 –6

IC (A)

×50

Without Heatsink

0 –40

0

0×

2

×2

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10

5

–5 1m s

s

m 10

m

s 1m

10

IC (A)

IC (A)

s

–1

1 0.5

–0.1

0.1

Single Pulse

Single Pulse

–0.05 Without Heatsink

0.05 Without Heatsink 0.03 3

–0.5

Ta=25°C

5

10

50

VCE (V)

100

–0.03 –3

Ta=25°C

–5

–10

–50

–100

VCE (V)

109

SLA6020

PNP + NPN Darlington External dimensions A

3-phase motor drive

Absolute maximum ratings

•••

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

100

–100

V

VCEO

100

–100

V

VEBO

6

–6

V

IC

5

–5

A

ICP

8 (PW≤1ms, Du≤50%)

–8 (PW≤1ms, Du≤50%)

A

IB

0.5

–0.5

A

5 (Ta=25°C) PT

W

25 (Tc=25°C)

VISO

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j–c

5

°C/W

■Equivalent circuit diagram 1 R3

R4

2

8

4 R1

9

3

7

6

11

10

R2

5

R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ

12

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN 1mA

5

PNP

0.8mA

0.7mA

0.6mA

IB=2mA

0.5m

NPN (VCE=2V)

–8

5

IB=–4mA

A

–2m

A

–7

4

–1.2mA

4

–0.8mA

3

2

–0.6mA

2

–3 –2

–0.4mA

1

–30°C

–4

Ta= 125 °C 75°C 25°C

IC (A)

IC (A)

–5

3

IC (A)

–6 A 0.4m

1

–1 0 0

1

2

3

4

0 0

5

–1

VCE (V)

–2

–3

–4

0 0

–5

1

VCE (V)

VBE (V)

2

3

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

20000

typ

10000

PNP

(VCE=–4V)

20000

(VCE=–4V)

–8

10000 typ

5000

5000

1000 500

–4

–2

50 30 0.03 0.05

0.1

0.5

1

5

50 30 –0.03 –0.05

8

T a= 1

100

100

–0.1

–0.5

IC (A)

–1

–5

–8

IC (A)

PNP (VCE=4V)

20000

(VCE=–4V)

20000

10000

10000

5000

5000

= Ta

1000 500

25°C

–

° 30

C

100 50 30 0.02

1000

–3

25°C

0°

C

500

100

0.05

0.1

0.5

IC (A)

110

75°C

75°C

hFE

hFE

°C 25

=1 Ta

C 5° 12

1

5

8

50 30 –0.03 –0.05

–0.1

–0.5

IC (A)

–1

–2

VBE (V)

hFE-IC Temperature Characteristics (Typical) NPN

0 0

–30°C

500

25°C 75°C 25°C

hFE

hFE

1000

IC (A)

–6

–1

–5

–8

–3

SLA6020 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

100

hFE

2000

VCE(sat)

Specification

Unit

Conditions

10

µA

VCB=100V

10

mA

VEB=6V

V

IC=10mA

–100

VCE=4V, IC=3A

2000

max

ICBO

PNP

1.5

V

min

typ

Unit

Conditions

–10

µA

VCB=–100V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–3A

IC=3A, IB=6mA

–1.5

V

IC=–3A, IB=–6mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

20

–3

IC=3A

θ j–a (°C / W)

IC=5A

1

–2

VCE (sat) (V)

VCE (sat) (V)

10

2

IC=–5A IC=–3A

–1

IC=1A

IC=–1A

5

1

0 0.2

0.5

1

5

10

0 –0.2

50

0.5

–0.5 –1

–5 –10

IB (mA)

–50 –100

–500

1

5

2

100

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

50

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

10

IB (mA)

–3

(IC / IB=1000)

25 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

20

PT (W)

VCE (sat) (V)

0 –0.3

5

IC (A)

–0.5

–1

–5

–8

IC (A)

Without Heatsink

0 –40

0

50 ×

k

5

10 0×

tsin

50 ×

ea

Ta=–30°C

25°C 75°C

–1

eH

1

10 0×

10

125°C

0 0.5

15

init

125°C

Inf

25°C 75°C

ith

VCE (sat) (V)

W

Ta=–30°C

1

–2

2

2

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP –10

10

0µ

10

µs 100

–5

s

5

s 1m

10

s 1m

m

ms 10

s

IC (A)

IC (A)

1 0.5

–1 –0.5

–0.1

0.1

Single Pulse

Single Pulse

0.05 Without Heatsink

–0.05 Without Heatsink

0.03 Ta=25°C 5 3

–0.03 Ta=25°C –3 –5

10

50

VCE (V)

100

–10

–50

–100

VCE (V)

111

SLA6022

PNP + NPN Darlington External dimensions A

3-phase motor drive

Absolute maximum ratings NPN

VCBO VCEO

PNP

Unit

100

–100

V

80

–100

V

VEBO

6

–6

V

IC

5

–5

A

IB

0.5

–0.5

A

5 (Ta=25°C)

PT

W

25 (Tc=25°C)

VISO

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j–c

5

°C/W

■Equivalent circuit diagram 1 R2 R3

8

9

3

7

6

11

2

4

10

R1

12

5

R1: 2.5kΩ typ R2: 2.5kΩ typ R3: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

8

m

–7

IB=

IB =

–5 A

0.4mA

–1 3

4

4

0 0

5

2

–0.4mA

–1

–2

–3

VCE (V)

–4

0 0

–5

–30°C

–2

1

VCE (V)

–0.6mA

–3

2

2

–0.8mA

–4

125 °C 75 ° C 25°C

3

6

Ta=

0.6m

4

IC (A)

IC (A)

mA –1.2

–6

1mA

5

IC (A)

6

1

(VCE=4V)

A –2m

A

2mA

–4

mA

A 6m

20

7

0 0

NPN 8

–8

1

2

3

VBE (V)

hFE-IC Characteristics (Typical) NPN

(VCE=4V)

20000 10000

PNP

PNP

(VCE=–4V)

20000

(VCE=–4V)

–8

10000

typ

typ

5000

5000

IC (A)

1000

hFE

hFE

–6

1000

500

500

100

100

–4

50 0.03 0.05

0.1

0.5

1

5

50 –0.03 –0.05

8

Ta=1 25°C 75°C 25°C –30°C

–2

–0.1

–0.5

–1

–5 –8

IC (A)

IC (A)

hFE-IC Temperature Characteristics (Typical) NPN

(VCE=4V)

20000 10000

PNP (VCE=–4V)

20000 10000

5000

5000 C 5° 5°C 7 12 °C T 25

Ta

0°

C

1000

-3

1000

500

500

100

100

50 0.03

0.1

0.5

IC (A)

112

hFE

hFE

a=

1

5

8

50 –0.03

=1

°C 25 5°C 7 –3

–0.1

25°C 0°

C

–0.5

IC (A)

–1

–5

–8

0 0

–1

VBE (V)

–2

–3

SLA6022 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

80

hFE

2000

VCE(sat)

Specification

Unit

Conditions

10

µA

VCB=100V

10

µA

VEB=6V

V

IC=10mA

–100

VCE=4V, IC=3A

2000

max

ICBO

PNP

1.5

V

VFEC

V

trr

µs

min

typ

Unit

Conditions

–10

µA

VCB=–100V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–3A

IC=3A, IB=6mA

–1.5

V

1.3 2.0

IC=–3A, IB=–6mA

V

IFEC=1A

µs

IFEC=±100mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

–3

2

–2

20

IC=5A IC=3A

IC=–5A IC=–3A IC=–1A

–1

1

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

5

IC=1A

1

0 0.2

0.5

1

5

10

50

0 –0.2

100

–0.5

–1

–5

–10

–50

0.5 1

–100

IB (mA)

IB (mA)

50 100

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

3

10

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

5

(IC / IB=1000)

–3

25 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

75°C

25°C

20

PT (W) Ta=–30°C

–1

50 ×

25°C 75°C

5

0× 2

k

0× 10

tsin

10

10

ea

VCE (sat) (V)

15

eH

–30°C

5°C

–2

init

Ta=12

Inf

1

ith

VCE (sat) (V)

W

2

50 ×2

Without Heatsink

125°C

0 0.3

0.5

1

5

IC (A)

0 –0.3

8

–0.5

–1

–5

IC (A)

–8

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10

5

–5

10

IC (A)

ms

IC (A)

s 1m

ms

s 1m

10

1 0.5

–1 –0.5

–0.1

0.1

Single Pulse

Single Pulse

0.05 Without Heatsink

–0.05 Without Heatsink

0.03 Ta=25°C 3 5

–0.03 –3

10

50

VCE (V)

100

Ta=25°C

–5

–10

–50

–100

VCE (V)

113

SLA6023

PNP + NPN Darlington 3-phase motor drive

External dimensions A

Absolute maximum ratings NPN 60 60 6 6 12 (PW≤1ms, Du≤50%) 0.5

VCBO VCEO VEBO IC ICP IB

Unit

PNP –60 –60 –6 –6 –12 (PW≤1ms, Du≤50%) –0.5

V V V A A A

5 (Ta=25°C)

PT

W

25 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5

VISO Tj Tstg θ j-c

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

Vrms °C °C °C/W

■Equivalent circuit diagram 1 R2 R3

8

9

3

7

6

11

2

4

10

R1

12

5

R1: 2kΩ typ R2: 3kΩ typ R3: 80Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

10

30

m

A 0m

A

–12

5mA

1

NPN

IB=–10mA

–3mA

10

–10 –2mA

2mA

8

IC (A)

1mA

6

IC (A)

–8

8

IC (A)

(VCE=4V)

12

–5mA

–6 –1mA

4

–4

4

6

0.5mA

–0.5mA

2

–2

T a=

2

125 °C 75° C 25°C –30°C

IB= 100 mA

12

PNP

0 0

2

VCE (V)

4

0 0

6

–2

–4

0 0

–6

1

2

3

VBE (V)

VCE (V)

hFE-IC Characteristics (Typical) NPN 20000

(VCE=4V)

10000

PNP 20000

PNP

(VCE=–4V)

(VCE=–4V)

–12

10000

–10

typ typ

5000

1000

500

500

–4

–2

Ta=

1000

–6

200 0.1

0.5

1

5

200 –0.1

10 12

IC (A)

0

–0.5

–1

–5

–10 –12

IC (A)

hFE-IC Temperature Characteristics (Typical) NPN

PNP (VCE=4V)

20000

20000

(VCE=–4V) Ta=125°C

10000

10000

5000

5000 °C

75

°C 2

1000

hFE

hFE

75°C

= Ta

5 12

C 5°

–3

0°

200 0.1

1000

–30°C

500

0.5

1

IC (A)

114

25°C

C

500

5

10 12

200 –0.1

25°C –30 °C

hFE

hFE

IC (A)

–8

125 °C 75°C

5000

–0.5

–1

IC (A)

–5

–10 –12

0

–1

VBE (V)

–2

–3

SLA6023 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC trr

typ

max 10 10

60 2000

5000

ton tstg tf fT Cob

12000 1.5 2.0

PNP Conditions

µA µA V

VCB=60V VEB=6V IC=25mA VCE=4V, IC=5A

V V V µs

µs µs µs MHz pF

0.8 6.0 2.0 80 100

Specification

Unit

min

typ

max –10 –10

–60 2000

5000

Conditions

µA mA V

VCB=–60V VEB=–6V IC=–25mA VCE=–4V, IC=–5A

1.0

V V V µs

1.0 1.4 0.6 120 150

µs µs µs MHz pF

IC=5A, IB=10mA

VCC 25V, IC=5A, IB1=–IB2=10mA VCE=12V, IE=–1A VCB=10V, f=1MHz

12000 –1.5 –2.0 2.0

Unit

IC=–5A, IB=–10mA IFEC=5A IFEC=±0.5A VCC –25V, IC=–5A, IB1=–IB2=–10mA VCE=–12V, IE=1A VCB=–10V, f=1MHz

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP 20

–3

3

2

IC=8A

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

–2

IC=–8A IC=–4A

IC=4A

1

0.5

1

–1

IC=2A

0.6 0.2

5

IC=–2A

1

5

10

50 100 200

0.6 –0.2

–0.5 –1

–5 –10

IB (mA)

0.5 1

–50 –100 –200

5

3

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

50 100

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

10

IB (mA)

(IC / IB=1000)

–3

25 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

20 W

PT (W)

5

5

10

0 –0.1

20

–1

–0.5

–5

–10

–20

IC (A)

IC (A)

k

75°C

125°C

50 ×

tsin

50 ×

ea

75°C

1

×2

Ta=–30°C 25°C

–1

25°C

0.5

10 0× 10 0

10

–30°C

0 0.1

15

eH

VCE (sat) (V)

–2

init

Ta=125°C

1

Inf

VCE (sat) (V)

ith

2

2

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10

0µ

–20 10

20

s

IC (A)

IC (A)

s

0.5

1m

ms

1

–1

–0.5 Single Pulse Without Heatsink Ta=25°C

0.1 3

ms 10

–5

100µs

s 1m

10

5

5

Single Pulse Without Heatsink Ta=25°C

10

50

VCE (V)

100

–0.1 –3

–5

–10

–50

–100

VCE (V)

115

SLA6024

PNP + NPN Darlington External dimensions A

3-phase motor drive

Absolute maximum ratings NPN 60 60 6 8 12 (PW≤1ms, Du≤50%) — — 0.5

VCBO VCEO VEBO IC ICP IFEC IFECP IB

Unit

PNP –60 –60 –6 –8 –12 (PW≤1ms, Du≤50%) –8 –12 –0.5

V V V A A A A A

5 (Ta=25°C) 25 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5

PT VISO Tj Tstg θ j–c

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

W Vrms °C °C °C/W

■Equivalent circuit diagram 1 R1 R2

2

4

8

9

3

7

6

11

10

R3

12

5

R1: 2kΩ typ R2: 80Ω typ R3: 2kΩ typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN 8

PNP

NPN

–8

IB=5mA

7

–7

6

–6

(VCE=4V)

8

IB=–5mA

7

IB=–2mA

6

0.7mA

3

2 IB=–0.6mA

1

–1

1

2

4 3

–2

0.5mA

5

IB=–1mA

–3

2

0

–4

Ta=–20°C

4

IC (A)

IC (A)

IC (A)

–5

25°C 75°C 125°C

1.0mA

5

3

4

5

0 0

6

1 –1

–2

VCE (V)

–3

–4

–5

0

–6

0

0.5

1

VCE (V)

1.5

2

2.5

3

VBE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

10000

PNP (VCE=–4V)

10000

(VCE=–4V)

–8

typ

–7

typ

–6 1000

1000

–4 –3

100

25°C 75°C 125°C

100

Ta=–20°C

IC (A)

hFE

hFE

–5

–2 –1 10 0.01

0.1

1

10 –0.01

10 12

–0.1

IC (A)

–1

–10 –12

IC (A)

PNP

(VCE=4V)

10000

hFE

hFE

°C 25 C =1 75° C ° 25 C 0° –2

100

100

0.1

1

IC (A)

116

°C 25 °C =1 75 Ta °C 25 °C 0 –2

1000

Ta

10 0.01

(VCE=–4V)

10000

1000

1012

10 –0.01

–0.1

–1

IC (A)

–0.5

–1

–1.5

VBE (V)

hFE-IC Temperature Characteristics (Typical) NPN

0 0

–10–12

–2

–2.5

–3

SLA6024 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC trr ton tstg tf fT Cob

typ

max 10 10

60 2000

5000

12000 1.5 2.0

— — 0.5 2.0 1.2 50 100

PNP Specification

Unit

Conditions

µA µA V

VCB=60V VEB=6V IC=10mA VCE=4V, IC=5A

V V V µs µs µs µs MHz pF

min

typ

max –10 –10

–60 2000

5000

IC=5A, IB=10mA

12000 –1.5 –2.0 2.0

Conditions

µA mA V

VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–5A

V V V µs µs µs µs MHz pF

1.0 0.5 1.4 0.6 100 130

VCC 25V, IC=5A, IB1=–IB2=10mA VCE=12V, IE=–1A VCB=10V, f=1MHz

Unit

IC=–5A, IB=–10mA IFEC=5A IFEC=±0.5A VCC –25V, IC=–5A, IB1=–IB2=–10mA VCE=–12V, IE=1A VCB=–10V, f=1MHz

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Temperature Characteristics (Typical) 3

2.5

–2.5

2

–2

Ta=25°C Ta=–20°C

1.5

1

(IC=–5A)

–3

VCE (sat) (V)

VCE (sat) (V)

PNP

(IC=5A)

20

10

θ j–a (°C / W)

NPN

Ta=25°C

–1.5 Ta=–20°C

–1 Ta=75°C

0.5

1

–0.5

0 0.5

5

Ta=125°C

Ta=75°C

Ta=125°C

1

10

0 –0.5

100

–1

–10

IB (mA)

0.5 1

–100

5

10

VCE(sat)-IC Temperature Characteristics (Typical) NPN (IB=10mA)

(IB=–10mA)

–2

25 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

20 W ith

–1.5

1.5

500 1000

PT-Ta Characteristics PNP

2

50 100

PW (mS)

IB (mA)

PT (W)

k

VCE (sat) (V)

tsin

10 0× 10 0

×2

10

50 ×50 ×2

–0.5

5

Ta=75°C

Ta=75°C

Without Heatsink

Ta=125°C

Ta=125°C

0 0.01

15

ea

Ta=–20°C

eH

0.5

Ta=25°C

–1

init

VCE (sat) (V)

Inf

Ta=–20°C

Ta=25°C

1

0.1

1

0 –0.01

10 12

–0.1

IC (A)

–1

–10 –12

0 –40

0

50

100

150

Ta (°C)

IC (A)

Safe Operating Area (SOA) NPN

PNP –10

s

s 0µ

10

10

–20 0µ 10

20

S

S

m

m

10

S 1m

10

S 1m

1

IC (A)

IC (A)

–1

0.1

0.01 1

–0.1

Single Pulse Without Heatsink Ta=25°C

Single Pulse Without Heatsink Ta=25°C

5

10

VCE (V)

50

100

–0.01 –1

–5

–10

–50

–100

VCE (V)

117

PNP + NPN Darlington

SLA6026

3-phase motor drive

External dimensions A

Absolute maximum ratings NPN 60 60 6 10 15 (PW≤1ms, Du≤50%) — — 0.5

VCBO VCEO VEBO IC ICP IFEC IFECP IB

Unit

PNP –60 –60 –6 –10 –15 (PW≤1ms, Du≤50%) –10 –15 –0.5

V V V A A A A A

5 (Ta=25°C) 35 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 3.57

PT VISO Tj Tstg θ j–c

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

•••

W Vrms °C °C °C/W

■Equivalent circuit diagram 1 R1 R2

2

4

8

9

3

7

6

11

10

R3

12

5

R1: 2kΩ typ R2: 80Ω typ R3: 2kΩ typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical) PNP

10 IB=2mA

–9

1mA

8

6

10

–6

5 0.6mA

4

–5 –1mA

–4 –3

2

–2

0.4mA

1

5

T a= 1

3

25°C 75°C 25°C –30°C

IC (A)

IC (A)

–7

0.8mA

(VCE=2V)

–2mA

–8

7

0 0

NPN 15

–3mA

IC (A)

9

–10

IB=–5mA

NPN

–0.6mA

–1 1

2

3

4

5

0 0

6

VCE (V)

–1

–2

–3

–4

–5

0 0

–6

1

2

3

VBE (V)

VCE (V)

hFE-IC Characteristics (Typical) NPN 20000

PNP

(VCE=4V) 20000

10000

PNP

(VCE=–4V)

(VCE=–2V)

–15

10000

typ

5000

5000

typ

–5

100 0.1

1

100 –0.1

10 15

IC (A)

–1

–10 –15

20000

20000

10000

75°C 25°C –30°C

hFE

1000

1

IC (A)

118

(VCE=–4V) IB=125°C

10000

°C 25 =1 °C 75 C ° 25 C 0° –3

hFE

Ta

100 0.1

PNP

(VCE=4V)

10 15

1000

100 –0.1

–1

IC (A)

–1

–2

VBE (V)

IC (A)

hFE-IC Temperature Characteristics (Typical) NPN

0 0

75°C 25°C –30°C

1000 500

500

Ta=12 5°C

1000

IC (A)

hFE

hFE

–10

–10

–15

–3

SLA6026 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC trr ton tstg tf fT Cob

typ

max 10 10

60 2000

5000

12000 1.5 2.0

– – 0.6 2.0 1.5 50 100

PNP Specification

Unit

Conditions

µA µA V

VCB=60V VEB=6V IC=10mA VCE=4V, IC=6A

V V V µs µs µs µs MHz pF

min

typ

max –10 –10

–60 2000

5000

IC=6A, IB=12mA

12000 –1.5 –2.0 2.0

Conditions

µA mA V

VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–6A

V V V µs µs µs µs MHz pF

4.0 0.7 1.2 0.7 50 180

VCC 24V, IC=6A, IB1=–IB2=12mA VCE=12V, IE=–1A VCB=10V, f=1MHz

Unit

IC=–6A, IB=–12mA IFEC=–6A IFEC=±0.5A VCC –24V, IC=–6A, IB1=–IB2=–12mA VCE=–12V, IE=1A VCB=–10V, f=1MHz

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Temperature Characteristics (Typical) NPN

PNP

(IC=5A)

3

2.5

20

–2.5

25°C

1.5 –30°C

1

–2

θ j–a (°C / W)

2

10 75°C

75°C

VCE (sat) (V)

VCE (sat) (V)

(IC=–5A)

–3

25°C

–1.5 –30°C

–1

1 Ta=125°C

IB=125°C

0.5

–0.5

0 0.3

1

10

100

0 –0.3

500

–1

–10

IB (mA)

–100

–500

0.3 1

10

VCE(sat)-IC Temperature Characteristics (Typical) NPN

1000 2000

PT-Ta Characteristics PNP

(IB=10mA)

3

100

PW (mS)

IB (mA)

(IB=–10mA)

–3

40 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

30

PT (W)

k

sin

at

20 100×100×2

25°C

–1

–30°C

He

1

ite

75°C

fin

VCE (sat) (V)

–2

In

25°C

ith

VCE (sat) (V)

W

2

–30°C

50×50×2

10

0 0.01

75°C

Ta=125°C

Ta=125°C

0.1

1

0 –0.01

10 15

–0.1

IC (A)

Without Heatsink

–1

–10 –15

IC (A)

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP –20

20

S 0µ 10

S 0µ

10

10

–10

s

1m

1m

IC (A)

IC (A)

s

1

Single Pulse Without Heatsink Ta=25°C

Single Pulse Without Heatsink Ta=25°C

0.1 1

–1

5

10

VCE (V)

50

100

–0.1 –1

–5

–10

–50

–100

VCE (V)

119

SLA8001

PNP + NPN H-bridge

External dimensions A

Absolute maximum ratings

SLA (12-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

12

–12

A

IB

3

–3

A

5 (Ta=25°C)

PT

W

40 (Tc=25°C)

VISO

•••

1000 (Between fin and lead pin, AC)

Vrms

Tj

150

°C

Tstg

–40 to +150

°C

θ j–c

3.12

°C/W

■Equivalent circuit diagram 4

8

R2

5

3 6

2

9

7 10

12

R1

1

11

R1: 500kΩ typ R2: 350Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP –12 0m

100mA

–10 60mA

8

–20

A

–100mA

–8

8

6

20mA

4

–6

IC (A)

IC (A)

IC (A)

–60mA 40mA

(VCE=1V)

10

IB=

A IB= 20 0m

10

0m 15

NPN 12

A –150m

A

12

–40mA

–4

6

4

0 0

1

2

3

4

–2

5

–10mA

0

0 0

6

2

–30°C

2

Ta= 125 °C 75° C 25°C

–20mA 10mA

–1

–2

VCE (V)

–3

–4

–5

–6

0

0.5

VCE (V)

1.0

VBE (V)

1.5

hFE-IC Characteristics (Typical) NPN

PNP (VCE=1V)

500

typ

100

50

50

(VCE=–1V)

–12

typ

100

PNP

(VCE=–1V)

500

–10

10

10

5

5

2 0.02

0.05 0.1

0.5

1

5

2 –0.02

1012

–4

–2

–0.05 –0.1

–0.5 –1

–5

–10 –12

IC (A)

IC (A)

(VCE=1V)

500

100

Ta

°C 25 =1 75°C °C 25

100

C 0° –3

50

hFE

hFE

50

10

10

5

5

2 0.02

0.05 0.1

0.5

IC (A)

120

PNP 500

1

5

1012

2 –0.02

(VCE=–1V)

°C 25 C =1 75° Ta °C 25 C 0° –3

–0.05 –0.1

–0.5 –1

IC (A)

0 0

–0.5

–1.0

VBE (V)

hFE-IC Temperature Characteristics (Typical) NPN

–6

Ta= 125 °C 75° C 25°C –30 °C

hFE

hFE

IC (A)

–8

–5 –10 –12

–1.5

SLA8001 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

Conditions

100

µA

VCB=60V

60

mA

VEB=6V

V

IC=25mA

–60

VCE=1V, IC=6A

50

IEBO VCEO

60

hFE

50

Specification

Unit

max

ICBO

PNP

min

typ

Unit

Conditions

–100

µA

VCB=–60V

–60

mA

VEB=–6V

V

IC=–25mA

max

VCE=–1V, IC=–6A

VCE(sat)

0.35

V

IC=6A, IB=0.3A

–0.35

V

IC=–6A, IB=–0.3A

VFEC

2.5

V

IFEC=10A

2.5

V

IFEC=10A

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

1.5

–1.5

1.0

–1.0

10

0.5

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

5

–0.5

9A

6A

0 5

10

50

–9A –6A

0.5

–3A

3A

1A

–1A

100

1

IC=–12A

IC=12A

0 –5

5000

500 1000

–10

–50 –100

IB (mA)

–500 –1000

0.3 1

–5000

5

10 50

VCE(sat)-IC Temperature Characteristics (Typical) NPN

500

1000

PT-Ta Characteristics PNP

(IC / IB=20)

1.0

100

PW (mS)

IB (mA)

(IC / IB=20)

–1.0

40

W

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

ith

30

PT (W)

VCE (sat) (V)

k

10

0× 10

10

–30°C

Without Heatsink

–30°C

0.05 0.1

20

25°C

75°C 25°C

0 0.02

tsin

75°C

ea

Ta=125°C

–0.5

eH

Ta=125°C

init

VCE (sat) (V)

Inf

0.5

0.5 1

5

0 –0.02 –0.05 –0.1

1012

IC (A)

–0.5

–1

–5 –10–12

0 –40

0

50× 50×

0× 2

2mm

50

100

150

Ta (°C)

IC (A)

Safe Operating Area (SOA) NPN

PNP –30

30

s

10

s

ms

–10

5

1m

1m ms 10

10

IC (A)

IC (A)

–5

1

–1

0.5

–0.5 Single Pulse Without Heatsink Ta=25°C

0.23

5

10

50

VCE (V)

100

–0.2 –3

Single Pulse Without Heatsink Ta=25°C

–5

–10

–50

–100

VCE (V)

121

SMA4020 Absolute maximum ratings

PNP Darlington General purpose

External dimensions B

Electrical characteristics

(Ta=25°C)

Ratings

Unit

Symbol

VCBO

–60

V

ICBO

VCEO

–60

V

IEBO

VEBO

–6

V

VCEO

–60

IC

–4

A

hFE

2000

–1

A

VCE(sat)

4 (Ta=25°C)

PT

SMA

(Ta=25°C)

Specification min typ max

Symbol

IB

•••

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA VCE=–4V, IC=–3A

–1.5

V

IC=–3A, IB=–6mA

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 10

7

6

3 R1

R2

12

8

5

1

11

9

4

2

R1: 2kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical) –6

hFE-IC Characteristics (Typical) (VCE=–4V)

10000 mA

A –1.5m

.2mA

–1.8

5000

hFE-IC Temperature Characteristics (Typical) (VCE=–4V)

10000

75°C

5000

typ

25°C

–1.0mA –0.9mA –0.8mA

hFE

IC (A)

–4

1000

=1 Ta

1000

hFE

IB=–2

A –1.2m 25

°C

–3

500

500

100

100

0°

C

–2

0 0

–1

–2

–3

–4

–5

50 –0.03

–6

–0.1

–0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

–1

50 –0.03

–5 –6

–0.1

–0.5

–5 –6

–1

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–3

(VCE=–4V)

–6

–5

Ta=–30°C

–1

–4

–3

IC=–4A IC=–2A

–1

–30°C

Ta=125 °C

25°C 75°C

–2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

75°C 25°C

–2

–2

IC=–1A 125°C

–1 0 –0.5

–1

0 –0.2

–5 –6

IC (A)

–0.5

–5

–1

–10

0 0

–50 –100

IB (mA)

θ j-a-PW Characteristics

–1

PT-Ta Characteristics

20

–2

–3

VBE (V)

Safe Operating Area (SOA)

20

–10

10

s 1m

–5

10

m s

15 ith

–1

eH

IC (A)

init

10

ea tsin

PT (W)

Inf

–0.5

k

θ j–a (°C / W)

W

5

5 1

Without Heatsink

–0.1 Single Pulse

–0.05 Without Heatsink

0.5 1

5

10

50 100

PW (mS)

122

500 1000

0 –40

Ta=25°C

0

50

Ta (°C)

100

150

–0.03 –3

–5

–10

–50

VCE (V)

–100

SMA4021 Absolute maximum ratings

PNP Darlington With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

–60 –60 –6 –3 –6 (PW≤1ms, Du≤50%) –0.5 –6 (PW≤0.5ms, Du≤25%) –8 (PW≤10ms, Single pulse) 100 4 (Ta=25°C) 20 (Tc=25°C) 150 –40 to +150

V V V A A A A A V

ICBO IEBO VCEO hFE VCE(sat) VBE(sat)

Tj Tstg

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions B

(Ta=25°C)

Specification min typ max –10 –10 –60 2000 5000 12000 –1.5 –2.0

Unit

Conditions

µA mA V

VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–2A

V V

IC=–2A, IB=–4mA

●Diode for flyback voltage absorption Specification min typ max 100 1.2 10 100

Symbol VR VF IR trr

W °C °C

SMA

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=100V IF=±100mA

■Equivalent circuit diagram 7

6 R1 R2

1

10

9

4

3

2

12

8

5

11

R1: 2kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

(VCE=–4V)

10000

A

A –1.5m

.2mA

m –1.8

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

–6

5000

5000

typ

25 =1 Ta

–1.0mA –0.9mA –0.8mA

˚C

1000

1000

hFE

IC (A)

–4

hFE

IB=–2

A –1.2m

500

–3

0˚

C

500

–2 75˚C 25˚C

100

0 0

–1

–2

–3

–4

–5

100

50 –0.03

–6

–0.05 –0.1

–0.5

–1

50 –0.03

–5 –6

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

–0.05 –0.1

–0.5

–1

–5 –6

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical) (VCE=–4V)

(IC / IB=1000) –3

–3

–2

–2

–6

IC=–4A IC=–2A

–1

–2

–30°C

75°C

Ta=–30°C

–1

25°C

–3

Ta=125 °C

25°C

75°C

–4

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–5

IC=–1A 125°C

0 –0.5

–1

–1

0 –0.2

–5 –6

–0.5 –1

IC (A)

θ j-a-PW Characteristics 20

–5

–10

–50

0

–100

0

–1

–2

VBE (V)

PT-Ta Characteristics

Safe Operating Area (SOA)

20

–10 10 0µ s

s

IC (A)

ea tsin k

PT (W)

–1

eH

θ j–a (°C / W)

m

init

10

5

s

Inf

5

1m

ith

10

W

15

10µs

–5

10

1

–3

IB (mA)

Without Heatsink

–0.5

–0.1 Single Pulse

–0.05 Without Heatsink

0.5 1

5

10

50

PW (mS)

100

500 1000

0 –40

0

50

Ta (°C)

100

150

–0.03 –3

Ta=25°C

–5

–10

–50

–100

VCE (V)

123

SMA4030 Absolute maximum ratings

NPN Darlington General purpose

External dimensions B

Electrical characteristics

(Ta=25°C)

Ratings

Unit

Symbol

VCBO

120

V

ICBO

VCEO

100

V

IEBO

VEBO

6

V

VCEO

100

IC

3

A

hFE

2000

ICP

5 (PW≤1ms, Du≤50%)

A

IB

0.2

A

Unit

Conditions

10

µA

VCB=120V

10

mA

VEB=6V

V 6000

15000

VCE(sat)

1.1

1.5

V

VBE(sat)

1.7

2.0

V

4 (Ta=25°C) W

20 (Tc=25°C)

SMA

(Ta=25°C)

Specification min typ max

Symbol

PT

•••

IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=3mA

ton

0.5

µs

VCC 30V

tstg

2.2

µs

IC=1.5A

Tj

150

°C

tf

0.9

µs

IB1=–IB2=3mA

Tstg

–40 to +150

°C

fT

40

MHz

VCE=12V, IE=–0.5A

Cob

30

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram 9

4

2 5

1

R1

11

8

12

R2

3

6

7

10

R1: 3kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

2m A

20000 1

typ

10000

0.6mA

10000

5000

IB=10m A

25°C

5000

0.4mA

hFE

0.3mA

hFE

3

(VCE=4V) 20000 75°C

mA

4

IC (A)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

5

1000 500

2

Ta

°C 25 =1

1000

–3

0°

C

500

1 100 0

1

2

3

4

5

100

50 0.03 0.05

0 6

0.1

0.5

50 0.03

5

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

3

3

2

2

0.5

1

5

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

0.05 0.1

IC-VBE Temperature Characteristics (Typical) (VCE=4V)

5

4

1

IC=3A IC=1.5A

2

1

IC=1A

125°C

0 0.5

1

1

0 0.1

5

IC (A)

θ j-a-PW Characteristics

0.5

1

IB (mA)

5

10

0

50

0

1

2

3

VBE (V)

PT-Ta Characteristics

20

–30°C

75°C

Ta=–30°C

25°C

3

Ta= 125 °C

25°C

IC (A)

VCE (sat) (V)

VCE (sat) (V)

75°C

Safe Operating Area (SOA)

20

10 10

0µ s

5 10 15

IC (A)

ea tsin k

PT (W)

eH

θ j–a (°C / W)

s

m

init

5 1

s

Inf

10

ith

10

1m

W

5

1 0.5

Without Heatsink

0.1 Single Pulse

0.05 Without Heatsink 0.5 0

5

10

50

PW (mS)

124

100

500 1000

0 –40

0

50

Ta (°C)

100

150

0.03 3

Ta=25°C

5

10

VCE (V)

50

100

SMA4032 Absolute maximum ratings

NPN Darlington With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

120 100 6 3 5 (PW≤1ms, Du≤50%) 0.2 3 (PW≤0.5ms, Du≤25%) 5 (PW≤10ms, Single pulse) 120 4 (Ta=25°C) 20 (Tc=25°C) 150 –40 to +150

V V V A A A A A V

ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf fT Cob

Tj Tstg

W °C °C

12

8

5

1

VR VF IR trr

10 11

9

4

3

Unit

Conditions

µA mA V

VCB=120V VEB=6V IC=25mA VCE=4V, IC=1.5A

V V µs µs µs MHz pF

Specification min typ max 120 1.6 10 100

Symbol

SMA

(Ta=25°C)

Specification min typ max 10 10 100 2000 6000 15000 1.1 1.5 1.7 2.0 0.5 2.2 0.9 40 30

IC=1.5A, IB=3mA VCC 30V, IC=1.5A, IB1=–IB2=3mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz

●Diode for flyback voltage absorption

■Equivalent circuit diagram 2

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions B

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

R1 R2

7

6 R1: 3kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

5

20000 2m

1m

A

(VCE=4V) 20000 75°C

typ

10000

0.6mA

10000 25°C

5000

mA

4

A

5000

IB=10

0.4mA

IC (A)

3

°C 25 =1 Ta

2

hFE

hFE

0.3mA

1000

1000

500

C 0° –3

500

1

100 0 0

1

2

3

4

5

100

50 0.03 0.05

6

0.1

0.5

1

50 0.03

5

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

5

IC-VBE Temperature Characteristics (Typical) (VCE=4V)

5

3

3

0.5

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

0.05 0.1

4

2 IC=1A

125°C

0 0.5

1

1

0

0 0.1

5

IC (A)

0.5

θ j-a-PW Characteristics

1

IB (mA)

5

10

50

0

1

2

3

VBE (V)

PT-Ta Characteristics

20

–30°C

1

°C

1

IC=3A IC=1.5A

125

75°C

Ta=–30°C

25°C

3

Ta=

25°C

2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

75°C

2

Safe Operating Area (SOA)

20

10 10

0µ s

5 10

s

Inf

1m

ith tsin k

5 1

IC (A)

ea

PT (W)

eH

10

Without Heatsink

s m 10

init

θ j–a (°C / W)

W

15 5

1 0.5

0.1 Single Pulse

0.05 Without Heatsink 0.5 0

5

10

50

PW (mS)

100

500 1000

0 –40

0

50

Ta (°C)

100

150

0.03 3

Ta=25°C

5

10

VCE (V)

50

100

125

SMA4033 Absolute maximum ratings

NPN Darlington With built-in flywheel diode

Ratings

Unit

Symbol

VCBO VCEO VEBO IC ICP IB IF IFSM VR

120 100 6 2 4 (PW≤1ms, Du≤50%) 0.2 2 (PW≤0.5ms, Du≤25%) 4 (PW≤10ms, Single pulse) 120 4 (Ta=25°C) 20 (Tc=25°C) 150 –40 to +150

V V V A A A A A V

ICBO IEBO VCEO hFE VCE(sat) VBE(sat)

Tj Tstg

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions B

(Ta=25°C)

Specification min typ max 10 10 100 2000 6000 15000 1.1 1.5 1.7 2.0

Unit

Conditions

µA mA V

VCB=120V VEB=6V IC=25mA VCE=4V, IC=1A

V V

IC=1A, IB=2mA

●Diode for flyback voltage absorption Specification min typ max 120 1.8 10 100

Symbol VR VF IR trr

W °C °C

SMA

(Ta=25°C)

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

■Equivalent circuit diagram

12

8

5

1

10 11

9

4

3

2

R1 R2

7

6 R1: 4kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

4

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

10000

(VCE=4V)

10000

typ

3mA

I

5000

5000

1000

1000

500

500

mA B=4

0.4mA 0.3mA

1

3

2

4

5

100

50

50

20 0.02

6

0.05

0.1

VCE (V)

1

20 0.02

4

°C 25 C ° 75 5°C C 2 0° –3

=1

0.05

0.1

0.5

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Characteristics (Typical)

(VCE=4V)

25°C

4

3 –30°C

C 75°

VCE (sat) (V)

°C

75°C 25°C –30°C

Ta=125

1

2

4

IC-VBE Temperature Characteristics (Typical)

(IC=1A)

3

2

1

IC (A)

(IC / IB=1000)

3

VCE (sat) (V)

0.5

Ta

Ta=125 °C

2

1 5°C

1

100

IC (A)

0 0

hFE

A 1.2m A 0.6m

2

hFE

IC (A)

2mA

–30 °C

3

T a=

12

1

75°C

0 0.2

0.5

1

0 0.1

4

IC (A)

θ j-a-PW Characteristics

0.5

1

5

1

2

3

IB (mA)

VBE (V)

PT-Ta Characteristics

Safe Operating Area (SOA)

20

20

25°C

0 0

5 10 ms

10

1m

10

s

0µ

s

W ith

1

IC (A)

init eH

10

ea tsin

PT (W)

5

Inf

0.5

k

θ j–a (°C / W)

15

5 1

Without Heatsink

0.1 0.5 0.2

0.5 1

5

10

PW (mS)

126

50 100

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05

Single Pulse Without Heatsink Ta=25°C

3

5

10

VCE (V)

50

100

SMA5101 Absolute maximum ratings

N-channel General purpose

External dimensions B

•••

(Ta=25°C)

Symbol

Ratings

VDSS VGSS ID

100 ±20 ±4 ±8 (PW≤1ms) 16

SMA

(Ta=25°C)

Unit

Symbol

V V A ID(pulse) A EAS* mJ 4 (Ta=25°C, with all circuits operating, without heatsink) W PT 28 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Tch 150 °C Tstg –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.

Specification min typ max 100 ±500 250 2.0 4.0 1.1 1.7 0.50 0.60 180 82 40 40 1.2 2.0 250

Unit

Conditions

V nA µA V S Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 50V, VGS=10V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=±100mA

■Equivalent circuit diagram 2

1

4

9

11

8

5

3

6

12

7

10

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

8

8

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

7

7

6

25°C 125°C

6

0.6

5

(Ω)

7V

4

RDS

4

(ON)

5

ID (A)

ID (A)

(VGS=10V)

0.8

TC=–40°C

10V

6V

3

3

2

2

0.4

0.2

VGS=5V

1

1 0

0

10

0 0

20

2

4

6

8

0 0

10

1

2

3

4

VGS (V)

VDS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

Capacitance (pF)

(Ω) (ON)

0.6

0.4

100

Crss

0.5

0.1

1

5

10

0 –40

8

0

50

100

5 0

150

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

PT-Ta Characteristics

s 0µ 10

IT M LI

N)

) ot sh (1

20

fin

15

ite He

RD

PT (W)

In

ID (A)

ith

1

W

S

(O

5

With Silicone Grease Natural Cooling All Circuits Operating

25

s 1m

s m 10

ED

5

6

4

50

30 ID (pulse) max

7

40

(TC=25°C)

10

8

30

VDS (V)

TC (°C)

ID (A)

IDR (A)

Coss

50

125°C

0.2

0.2 0.05

8

Ciss

0.8

RDS

Re (yfs) (S)

TC=–40°C 25°C

0.5

7

VGS=0 f=1MHz

600

1.0

1

6

Capacitance-VDS Characteristics (Typical)

ID=4A VGS=10V

1.2

5

5

ID (A)

at sin

3

k

0.5

10

2 10V

1 5V

0

0

5 Without Heatsink

VGS=0V

1.0

0.5

VSD (V)

1.5

0.1 0.5

0 1

5

10

VDS (V)

50

100

0

50

100

150

Ta (°C)

127

SMA5102 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

100 ±20 ±4 ±8 (PW≤1ms) 16

ID(pulse) EAS* IF IFSM VR PT

θ j–a θ j–c Tch Tstg

N-channel With built-in flywheel diode Electrical characteristics

(Ta=25°C)

Uni

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

1

4

5

9

10

8

SMA

Unit

Conditions

V nA µA V S Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 50V, VGS=10V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption

* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.

3

•••

(Ta=25°C)

Specification min typ max 100 ±500 250 2.0 4.0 1.1 1.7 0.50 0.60 180 82 40 40 1.2 2.0 250

Symbol

V V A A mJ 4 (PW≤0.5ms, Du≤25%) A 8 (PW≤10ms, Single pulse) A 120 V 4 (Ta=25°C, with all circuits operating, without heatsink) W 28 (Tc=25°C,with all circuits operating, with infinite heatsink) W 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

2

External dimensions B

Symbol VR VF IR trr

11

Specification typ max

min 120

1.0

1.2 10

100

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

12

6

7

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical) TC=–40°C

10V

7

(VDS=10V)

0.8

8 7

6

25°C 125°C

6V

3

(ON)

4

0.6

5 4

RDS

ID (A)

5

(Ω)

6

7V

ID (A)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

8

0.4

3

2

0.2

2

VGS=5V

1

1

0 0

10

0

20

0

2

4

VDS (V)

6

8

0

10

0

1

2

3

4

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

6

Capacitance (pF)

(Ω)

Ciss

0.8

(ON)

RDS

Re (yfs) (S)

TC=–40°C 25°C

0.5

0.6

0.4

125°C

100

0.5

0.1

5

1

Crss

10 5

0 –40

8

0

50

ID (A)

10

20

ED

(1

LI

s

M

m

IT

10

PT (W)

N) (O S

RD

ID (A)

15

k sin at He

0.5

ite fin In

1

ith W

)

3

20

ot sh

4

With Silicone Grease Natural Cooling All Circuits Operating

25

s 1m

5

5

50

30

s 0µ 10

ID (pulse) max

6

40

PT-Ta Characteristics

(TC=25°C)

10

7

30

VDS (V)

Safe Operating Area (SOA)

8

IDR (A)

0

150

100

TC (°C)

IDR-VSD Characteristics (Typical)

2

Coss

50

0.2 0.2 0.05

8

VGS=0V f=1MHz

600

1.0

1

7

Capacitance-VDS Characteristics (Typical)

ID=4A VGS =10V

1.2

5

5

ID (A)

VGS (V)

10

10V VGS=0V

5 Without Heatsink

1 5V

0

0

0.5

1.0

VSD (V)

128

1.5

0.1 0.5

1

5

10

VDS (V)

50

100

0 0

50

100

Ta (°C)

150

SMA5103

N-channel + P-channel H-bridge

External dimensions B

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

20

V

ID

±5

4

A

ID(pulse)

±10 (PW≤1ms)

8 (PW≤1ms)

A

EAS*

2

—

mJ

4 (Ta=25°C, with all circuits operating, without heatsink)

PT

•••

W

28 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

θ j–a

31.2 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j–c

4.46 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 10

7

Pch 12

8 11 2

Nch

9 4

5

1 3

6

Characteristic curves ID-VDS Characteristics (Typical) N-ch

ID-VGS Characteristics (Typical) P-ch

–8

10 10V

N-ch

10

(VDS=10V)

–10V

7V

8

8

6V

–7V

ID (A)

6

ID (A)

ID (A)

–6

–4

6

4

4

TC=–40°C –6V

25°C

–2

2

2

VGS=–4V

125°C

–5V

VGS=4V

0

0

0

2

4

6

8

0

10

–2

–4

–6

–8

0

–10

0

2

VDS (V)

VDS (V)

4

8

6

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch (VGS=10V)

0.20

P-ch (VDS=–10V)

(VGS=–10V)

0.6

–8 TC=–40°C 25°C

0.5

0.4

ID (A)

(Ω) (ON)

(Ω)

0.3

RDS

0.10

RDS

(ON)

125°C

–6

0.15

–4

0.2

–2

0.05 0.1

0

0

2

4

6

8

0

10

0

–2

ID (A)

–4

–6

–8

ID (A)

0.3

P-ch

ID=5A VGS=10V

1.0

ID=–4A VGS=–10V

(Ω) (ON)

RDS

RDS

(ON)

(Ω)

0.8

0.2

0.6

0.4

0.1 0.2

0 –40

0

50

TC (°C)

130

100

150

0 –40

0

50

TC (°C)

–2

–4

–6

VGS (V)

RDS(ON)-TC Characteristics (Typical) N-ch

00

100

150

–8

–10

SMA

SMA5103 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±20V

IDSS

250

µA

VDS=60V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

1.6

VTH

2.0 2.2

3.3

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–60

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

2.2

RDS(ON)

0.17

Ω

VGS=10V, ID=5A

0.38

Ω

VGS=–10V, ID=–4A

Ciss

300

pF

VDS=25V, f=1.0MHz,

270

pF

VDS=–25V, f=1.0MHz,

Coss

160

pF

VGS=0V

170

pF

VGS=0V

ton

35

ns

ID=5A, VDD 30V, VGS=10V,

60

ns

ID=–4A, VDD –30V, VGS=–10V,

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

ISD=5A, VGS=0V

–4.4

V

ISD=–4A, VGS=0V

ns

ISD=±100mA

150

ns

ISD= 100mA

toff

35

VSD

1.1

trr

140

0.22

1.5

0.55

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10

Safe Operating Area (SOA) P-ch

(VDS=10V)

N-ch

(VDS=–10V)

5

(TC=25°C)

20

10

ID (pulse) max

10 ED IT M LI

5

TC=–40°C

1

ID (A)

Re (yfs) (S)

Re(yfs) (S)

5

1

R

D

S

(O

N

10

1m m

s

)

(1

sh

0µ

s

s

ot

)

1

TC=–40°C 25°C

0.5

25°C

125°C

125°C

0.5

0.5 0.3 0.08

0.5

1

5

0.3 –0.1

10

–0.5

–5

–1

0.1 0.5

–8

1

5

ID (A)

10

50

100

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) N-ch

P-ch

VGS=0V f=1MHz

1000

P-ch

VGS=0V f=1MHz

700

(TC=25°C) –10

500

ID (pulse) max ED LI M (O N)

RD

ID (A)

S

) ot

50

sh

50

Coss

100

s

(1

Coss

100

0µ

s m

Capacitance (pF)

IT

Ciss

10

Capacitance (pF)

10

–5

Ciss

s 1m

500

–1

–0.5

Crss Crss

10

10

0

10

20

30

40

50

0

–10

–20

VDS (V)

–30

–40

–50

–0.1 –0.5

–1

–5

VDS (V)

–10

–50 –100

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch

10

–8

30 With Silicone Grease Natural Cooling All Circuits Operating

25

8 –6

He

PT (W)

15

ite

IDR (A)

–4

fin In

10V

ith W

IDR (A)

20 –10V

6

in

s at

4 VGS=0V

–5V

–2

5 Without Heatsink

VGS=0V

0

0

1.0

0.5

VSD (V)

1.5

0

k

10 5V

2

0

0

–1

–2

VSD (V)

–3

–4

–5

0

50

100

150

Ta (°C)

131

SMA5104

N-channel + P-channel 3-phase motor drive

External dimensions B

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

20

V

ID

±5

4

A

ID(pulse)

±10 (PW≤1ms)

8 (PW≤1ms)

A

EAS*

2

—

mJ

4 (Ta=25°C, with all circuits operating, without heatsink)

PT

•••

W

28 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

θ j-a

31.2 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

4.46 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Tch

150

°C

Tstg

–40 to +150

°C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

■Equivalent circuit diagram 1

Pch 2

8

9 3

Nch 4

7

6

10

11

5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

N-ch

10

P-ch

N-ch

–8

(VDS=10V)

10 –10V

7V

10V

8

8

6V

–7V

ID (A)

6

ID (A)

ID (A)

–6

–4

4

6

4 TC=–40°C –6V

5V

25°C

–2

2

VGS=–4V

125°C

2

–5V

VGS=4V

0

0

2

4

6

8

0

10

0

–2

–4

–6

–8

0

–10

0

2

4

VDS (V)

VDS (V)

6

8

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch (VGS=10V)

0.20

P-ch (VGS=–10V)

0.6

(VDS=–10V)

–8 TC=–40°C

0.5

25°C

0.15

RDS

ID (A)

(Ω) (ON)

(Ω) 0.10

RDS

(ON)

125°C

–6 0.4

0.3

–4

0.2 0.05

–2 0.1

0

0

2

4

6

8

0

10

0

–2

ID (A)

–4

–6

–8

RDS(ON)-TC Characteristics (Typical) N-ch 0.3

P-ch

ID=5A VGS=10V

1.0

ID=–4A VGS=–10V

(Ω) (ON)

RDS

RDS

(ON)

(Ω)

0.8

0.2

0.6

0.4

0.1

0.2

0 –40

0

50

TC (°C)

132

100

150

0 –40

0

50

TC (°C)

0

0

–2

–4

–6

VGS (V)

ID (A)

100

150

–8

–10

SMA

SMA5104 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=250µA, VGS=0V

min

±500

nA

VGS=±20V

IDSS

250

µA

VDS=60V, VGS=0V

4.0

V

VDS=10V, ID=250µA

–2.0

S

VDS=10V, ID=5A

1.6

VTH

2.0 2.2

3.3

max

Unit

Conditions

V

ID=–250µA, VGS=0V

–60

IGSS

Re(yfs)

typ

500

nA

VGS= 20V

–250

µA

VDS=–60V, VGS=0V

–4.0

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–4A

2.2

RDS(ON)

0.17

Ω

VGS=10V, ID=5A

0.38

Ω

VGS=–10V, ID=–4A

Ciss

300

pF

VDS=25V, f=1.0MHz,

270

pF

VDS=–25V, f=1.0MHz,

Coss

160

pF

VGS=0V

170

pF

VGS=0V

ton

35

ns

ID=5A, VDD 30V, VGS=10V,

60

ns

ID=–4A, VDD –30V, VGS=–10V,

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

ISD=5A, VGS=0V

–4.4

V

ISD=–4A, VGS=0V

ns

ISD=±100mA

150

ns

ISD= 100mA

toff

35

VSD

1.1

trr

140

0.22

1.5

0.55

–5.5

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

10

Safe Operating Area (SOA) P-ch

(VDS=10V)

N-ch

(VDS=–10V)

5

(TC=25°C)

20

10

ID (pulse) max

0µ

10

s

5

ED IT M LI

Re (yfs) (S)

5

10

1m m

s

TC=–40°C

1

1

ID (A)

Re (yfs) (S)

)

N

R

TC=–40°C

S

s

(1

sh

(O

ot

)

D

1

25°C

25°C

0.5 125°C

125°C

0.5

0.5 0.3 0.08

0.5

1

5

0.3 –0.1

10

–0.5

–1

ID (A)

–5

0.1 0.5

–8

1

5

ID (A)

10

50

100

VDS (V)

Capacitance-VDS Characteristics (Typical) N-ch

P-ch

VGS=0V f=1MHz

1000

P-ch

VGS=0V f=1MHz

700

(TC=25°C) –10

500

ID (pulse) max

500

ED IT M LI N) (O

RD

S

ID (A)

Capacitance (pF)

Capacitance (pF)

50

s

) ot sh (1

50

Coss

100

0µ

s

s m 10

Coss

100

10 1m

–5

Ciss Ciss

–1

–0.5

Crss

Crss

10

10 0

10

20

30

40

50

0

–10

–20

–30

–40

–50

–0.1 –0.5

–1

–5

VDS (V)

VDS (V)

–10

–50 –100

VDS (V)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

N-ch

P-ch 30

–8

10

With Silicone Grease Natural Cooling All Circuits Operating

25

8 –6

PT (W)

ite

fin

IDR (A)

15

In

–4

ith

10V

W

IDR (A)

20 –10V

6

He at

4

sin

2

5 Without Heatsink

VGS=0V

0

0

0

0.5

1.0

VSD (V)

1.5

k

10 –5V

–2

VGS=0V

5V

0

–1

–2

–3

VSD (V)

–4

–5

0 0

50

100

150

Ta (°C)

133

SMA5105 Absolute maximum ratings

N-channel With built-in flywheel diode Electrical characteristics

(Ta=25°C)

Symbol

Ratings

VDSS VGSS ID

100 ±10 ±5 ±10 (PW≤1ms) 32

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

Symbol

■Equivalent circuit diagram

1

4

9

5

8

10

Specification typ max

min 120

VR VF IR trr

11

12

6

SMA

Unit

Conditions

V nA µA V S Ω Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 50V, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption (1 circuit)

* : VDD=20V, L=2mH, ID=5A, unclamped, see Fig. E on page 15.

3

•••

(Ta=25°C)

Specification min typ max 100 ±500 250 1.0 2.0 3.1 4.5 0.27 0.30 0.38 0.41 470 130 70 50 1.2 2.0 330

Symbol

V V A ID(pulse) A EAS* mJ IF 5 (PW≤0.5ms, Du≤25%) A IFSM 10 (PW≤10ms, Single pulse) A VR 120 V 4 (Ta=25°C, with all circuits operating, without heatsink) W PT 28 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Tch 150 °C Tstg –40 to +150 °C

2

External dimensions B

1.0

1.2 10

100

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

7

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V) 0.4

10

10 10V

4V

8

8

VGS=4V

(Ω)

6

4

4

VGS=10V

(ON)

3.5V

0.2

RDS

6

ID (A)

ID (A)

0.3

TC=–40°C

3V

25°C

2

2

0.1

125°C

VGS=2.5V

0

0 0

2

4

6

8

10

0

1

2

Re(yfs)-ID Characteristics (Typical) (VDS=10V)

10

3

0

5

4

0

1

2

3

4

5

6

7

8

9

10

VGS (V)

ID (A)

RDS(ON)-TC Characteristics (Typical)

Capacitance-VDS Characteristics (Typical)

VDS (V)

(ID=2.5A)

0.6

VGS=0V f=1MHz

2000 1000

VGS=4V

0.4 (ON)

(Ω)

Re (yfs) (S)

Capacitance (pF)

0.5

5

RDS

TC=–40°C 25°C

1

0.3 VGS=10V

0.2

Ciss

500

Coss

100

125°C

50 Crss

0.1

0.5 0.3 0.05

0.5

0.1

1

5

10

0 –40

10

0

50

ID (A)

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA) 20

M

I

(1 sh ot )

20

15

ite

fin

D

R

10V

10

0.5 4V

2

k sin

at

He

1

In

ID (A)

With Silicone Grease Natural Cooling All Circuits Operating

25

ith W

4

S

(O

N

)

LI

10 m s

1m s

PT (W)

5 6

50

30

10 0µ s

ID (pulse) max

10 D TE

40

PT-Ta Characteristics

(TC=25°C)

8

30

VDS (V)

TC (°C)

10

IDR (A)

0

150

100

5 Without Heatsink VGS=0V

0

0

0.5

1.0

VSD (V)

134

1.5

0.1 0.5

0 1

5

10

VDS (V)

50

100

0

50

100

Ta (°C)

150

SMA5106 Absolute maximum ratings Ratings

VDSS VGSS ID

100 ±10 ±4 ±8 (PW≤1ms) 16

PT

θ j–a θ j–c Tch Tstg

With built-in flywheel diode

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr

Symbol

■Equivalent circuit diagram

1

4

9

5

10

8

Specification typ max

min 120

VR VF IR trr

11

12

6

SMA

Unit

Conditions

V nA µA V S Ω Ω pF pF ns ns V ns

ID=250µA, VGS=0V VGS=±10V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=2A VGS=4V, ID=2A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 50V, VGS=10V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption

* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.

3

•••

(Ta=25°C)

Specification min typ max 100 ±500 250 1.0 2.0 1.1 1.7 0.47 0.55 0.60 0.78 230 60 60 50 1.2 2.0 250

Symbol

V V A A mJ 4 (PW≤0.5ms, Du≤25%) A 8 (PW≤10ms, Single pulse) A 120 V 4 (Ta=25°C, with all circuits operating, without heatsink) W 28 (Tc=25°C,with all circuits operating, with infinite heatsink) W 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

2

External dimensions B

Electrical characteristics

(Ta=25°C)

Symbol

ID(pulse) EAS* IF IFSM VR

N-channel

1.0

1.2 10

100

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

7

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

8

0.8

8 10V

7

7 4.5V

(Ω)

5

5

3

25°C 125°C

3

3.5V

2

VGS=10V

(ON)

TC=–40°C

4

0.4

RDS

4V

4

VGS=4V

0.6

6

ID (A)

ID (A)

6

0.2

2 VGS=3V

1

1

0 0

2

4

6

8

0

10

0

2

VDS (V)

4

6

0

8

0

1

2

3

4

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

6

7

8

Capacitance-VDS Characteristics (Typical)

(ID=2A)

1.2

7

5

ID (A)

VGS (V)

VGS=0V f=1MHz

700 500

5 Ciss

Capacitance (pF)

1.0

(Ω) (ON)

TC=–40°C

1

0.6

RDS

Re (yfs) (S)

VGS=4V

0.8

VGS=10V

25°C

0.4

100

Coss

50

125°C Crss

0.2

0.5 0.3 0.05

0.1

0.5

5

1

10 5

0 –40

8

0

ID (A)

50

IDR-VSD Characteristics (Typical)

20

Safe Operating Area (SOA)

0µ

LI M IT ED

s

sh (1

20

S

RD

ID (A)

k sin at He

0.5

15

ite fin In

1

ith W

PT (W)

(O

)

N)

ot

3

With Silicone Grease Natural Cooling All Circuits Operating

25

s

s m 10

1m

4

50

30

10

ID (pulse) max

5

5

40

PT-Ta Characteristics

(TC=25°C)

6

30

VDS (V)

10

7

IDR (A)

10

TC (°C)

8

10

10V

2 1 0

0

150

100

4V

0

5 Without Heatsink

VGS=0V

0.5

1.0

VSD (V)

1.5

0.1 0.5

0 1

5

10

VDS (V)

50

100

0

50

100

150

Ta (°C)

135

SMA5112 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

250 ±20 ±7

ID(pulse) EAS* PT

θ j-a θ j-c Tch Tstg

N-channel 3-phase DC motor 100V AC direct drive

External dimensions B

Electrical characteristics

(Ta=25°C)

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram

SMA

(Ta=25°C)

Specification min typ max 250 ±100 100 2.0 4.0 2.5 5.0 0.4 0.5 450 280 20 30 55 75 1.0 1.5 600

Symbol

V V A ±15 (PW≤1ms, Du≤1%) A 55 mJ 4 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

•••

Unit

Conditions

V nA µA V S Ω pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 100V, RL=28.6Ω, VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=±100mA

1

2

8

9 4

3

6

7

11

10 5

12

Characteristic curves ID-VDS Characteristics (Typical) 7

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

7

6V 10V

6

ID-VGS Characteristics (Typical)

(VGS=10V)

0.5

5.5V

6

0.4

3

(ON)

3

4.5V

1 VGS=4V

2

4

0.2

2

1 0 0

0.3

6

8

0 0

10

VDS (V)

2

TC=– 40°C

2

4

RDS

5V

125 °C 25° C

4

(Ω)

5

ID (A)

ID (A)

5

0.1

4

6

0 0

8

1

2

3

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

(VDS=10V)

5

6

7

Capacitance-VDS Characteristics (Typical)

ID=3.5A VGS=10V

1.0

10

4

ID (A)

VGS (V)

VGS=0V f=1MHz

2000 1000

0.8

(Ω) (ON)

RDS

Re (yfs) (S)

°C 40 =– TC 5°C 2 C 5° 12

500

Capacitance (pF)

5

0.6

0.4

1

5

0.1

0.5

1

0 –40

5 7

0

50

TC (°C)

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

30

(1

sh ot

)

25 20

ite

fin

In

1

ith

ID (A)

50

With Silicone Grease Natural Cooling All Circuits Operating

35

He

0.5

15

k in

s at

2

40

W

3

RDS (ON) LIMITED

30

40

1m s 10 m s

20

PT-Ta Characteristics

10 0µ s

5

10

VDS (V)

ID (pulse) max

5 4

150

(TC=25°C)

10

Crss

2 0

PT (W)

20

6

IDR (A)

100

ID (A)

7

VGS=0V

10

5.10V

1

5 Without Heatsink

0.1 0.5

1.0

VSD (V)

136

50

10

0.2

0 0

Coss

100

0.5 0.3 0.05

Ciss

1.5

0.05 3

0

5

10

50

VDS (V)

100

500

0

50

100

Ta (°C)

150

SMA5114

N-channel With built-in flywheel diode

Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

60 ±20 ±3

ID(pulse) EAS* IAS PT

θ j–a θ j–c Tch Tstg

Symbol

V V A ±6 (PW≤1ms, Du≤1%) A 6.8 mJ 3 A 4 (Ta=25°C, with all circuits operating, without heatsink) W 28 (Tc=25°C,with all circuits operating, with infinite heatsink) W 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

V(BR)DSS IGSS IDSS VTH Re(yfs)

Ciss Coss Crss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram 4

10

9

11

5

12

8

6

Unit

Conditions

V µA µA V S Ω Ω pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=1.0A VGS=10V, ID=1.0A VGS=4V, ID=1.0A VDS=10V, f=1.0MHz, VGS=0V ID=1A, VDD 30V, RL=30Ω, VGS=5V, see Fig. 3 on page 16. ISD=3A, VGS=0V ISD=±100mA

●Diode for flyback voltage absorption Symbol

1

SMA

(Ta=25°C)

Specification min typ max 60 ±10 100 1.0 2.5 1.0 2.3 0.20 0.25 0.25 0.30 170 130 20 80 170 330 150 1.0 1.5 80

RDS(ON)

* : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15.

3

•••

Electrical characteristics

(Ta=25°C)

Unit

2

External dimensions B

min 120

VR VF IR trr

7

Specification typ max 1.0

1.2 10

100

Unit

Conditions

V V µA ns

IR=10µA IF=1A VR=120V IF=±100mA

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

3

0.5

3 10V 3.4V

0.4

2

RDS

25°C

3V

1

TC=–

125

°C

VGS=2.8V

2

4

6

8

0 0

10

1

VDS (V)

Re(yfs)-ID Characteristics (Typical)

3

4

0 0

5

RDS(ON)-TC Characteristics (Typical)

Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz

500

Ciss

S=

Capacitance (pF)

(Ω)

VG

4V

0.3

(ON)

RDS

25°C

10V

0.2

100

Coss

50

10

125°C

5

0.5

0.1

0.1

0.5

1

Crss

0 –40

3

0

100

50

TC (°C)

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

ID (pulse) max

ID (A)

VGS=0V

15

k sin at He

5V

ite fin In

IDR (A)

ith W

0.5

5 Without Heatsink

0.1

1.0

VSD (V)

1.5

0.05 0.5

50

20

(1 sh ot

10

0.5

40

With Silicone Grease Natural Cooling All Circuits Operating

25

1m s

)

1

30

30

PT (W)

10 m s

RDS (ON) LIMITED

2

20

PT-Ta Characteristics

10 0µ s

5

10

VDS (V)

(TC=25°C)

10

3

1 0

150

ID (A)

0 0

3

0.4

1

1

2

ID (A)

(ID=1A)

TC=–40°C

0.2 0.05

1

VGS (V)

0.5

5

Re (yfs) (S)

2

0.1

(VDS=10V)

10

10V

0.2

40°C

1

0 0

VGS=4V

0.3

(ON)

ID (A)

ID (A)

(Ω)

2 3.2V

1

5

10

VDS (V)

50 100

0 0

50

100

150

Ta (°C)

137

SMA5117 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

250 ±20 ±7

N-channel 3-phase DC motor 100V AC direct drive

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr

■Equivalent circuit diagram 1

Unit

Conditions

V nA µA V S Ω pF pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 100V, RL=28.6Ω, VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=3.5A, VGS=0V, di/dt=100A/µs

9 4

3

SMA

(Ta=25°C)

Specification min typ max 250 ±100 100 2.0 4.0 4.5 6.5 0.2 0.25 850 550 250 20 25 90 70 1.1 1.5 85

Symbol

* : VDD=25V, L=4.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

8

•••

Electrical characteristics

(Ta=25°C)

V V A ID(pulse) ±15 (PW≤1ms, Du≤1%) A EAS* 120 mJ 4 (Ta=25°C, with all circuits operating, without heatsink) W PT 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Tch 150 °C Tstg –40 to +150 °C

2

External dimensions B

6

7

11

10 5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

7

(VGS=10V)

7

10V 6V

6

0.3

6

0.25

5.5V 5V

5

3 2

4.5V

3

25°C

0.15

0.1

125°C

2

1a

0.2

(Ω) (ON)

4

RDS

4

ID (A)

ID (A)

5

TC=–40°C

1

0.05

VGS=4V

0

0

2

4

8

6

0 0

10

2

6

4

VGS (V)

Re(yfs)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)

0.3

0.2

C 5°

12

1

5

6

7

VGS=0V f=1MHz

1000

Capacitance (pF)

(Ω)

°C

4

3000

(ON)

RDS

Re (yfs) (S)

25

3

Capacitance-VDS Characteristics (Typical)

0.4 °C 40 =– Tc

5

2

ID=3.5A VGS=10V

0.5

10

1

ID (A)

(VDS=10V)

20

0 0

8

VDS (V)

Ciss

500

Coss

100 50 Crss

0.1 0.5 0.3 0.05

0.1

0.5

1

5

0 –40

7

0

50

ID (A)

100

IDR-VSD Characteristics (Typical)

10

20

ID (pulse) max

10

10 1m

10

5

m s

5

40

50

PT-Ta Characteristics

(TC=25°C)

30

6

30

VDS (V)

Safe Operating Area (SOA)

(VGS=0V)

7

0µ

40 With Silicone Grease Natural Cooling All Circuits Operating

35

s

s

30

(1

sh

ot

25 In

20

ite

fin at

He

ID (A)

LIMITED

1 0.5

ith

3

(ON)

PT (W)

RDS

4

)

W

IDR (A)

10 0

150

TC (°C)

k

sin

15

2

0.1

10

0.05 1 0 0

5 Without Heatsink

0.5

1.0

VSD (V)

138

1.5

0.01 0.5

0

1

5

10

VDS (V)

50 100

500

0

50

100

Ta (°C)

150

SMA5118 Absolute maximum ratings Symbol

Ratings

VDSS VGSS ID

500 ±30 ±5

ID(pulse) EAS*

External dimensions B

•••

Electrical characteristics

(Ta=25°C)

Unit

V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr

* : VDD=30V, L=3.4mH, ID=5A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram

(Ta=25°C)

Specification min typ max 500 ±100 100 2.0 4.0 2.4 4.0 1.05 1.4 770 290 20 25 70 65 1.1 1.5 75

Symbol

V V A ±10 (PW≤1ms, Du≤1%) A 45 mJ 4 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C

SMA

Unit

Conditions

V nA µA V S Ω pF pF ns ns ns ns V ns

ID=100µA, VGS=0V VGS=±30V VDS=500V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=2.5A VGS=10V, ID=2.5A VDS=10V, f=1.0MHz, VGS=0V ID=2.5A, VDD 200V, RL=80Ω, VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=2.5A, di/dt=100A/µs

1

2

8

9 4

6

7

3

11

10 5

12

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=20V)

5

(VGS=10V)

2.0

5V

5

4

10V

ID (A)

3

ID (A)

1.5

4.5V

(ON) (Ω)

4

3

2

2

1.0

RDS

θ j–a θ j–c Tch Tstg

3-phase DC motor 200V AC direct drive

TC=125°C 25°C

1

VGS=3.5V

0 0

5

10

15

0 0

20

2

4

Re(yfs)-ID Characteristics (Typical)

3.0

4

5

VGS=0V f=1MHz

2000

Ciss

Capacitance (pF)

2.0

1.5

RDS

(ON) (Ω)

3

1000

=– Ta

1

2

Capacitance-VDS Characteristics (Typical)

ID=2.5A VGS=10V

2.5

°C 40 °C 25 5°C 12

1

ID (A)

RDS(ON)-TC Characteristics (Typical)

(VDS=20V)

5

Re (yfs) (S)

0 0

6

VGS (V)

VDS (V)

10

0.5

–40°C

1

4V

1.0

500

100 Coss

50

0.5

0.5 Crss

0.2 0.05

0.1

0.5

1

0 –40

5

0

ID (A)

50

100

10

150

0

10

20

IDR-VSD Characteristics (Typical)

Safe Operating Area (SOA)

(Ta=25°C)

5

30

40 With Silicon Grease Natural Cooling All Circuits Operating

ID (pulse) max

10

DS

N) (O

LI

M

IT

ED

10

R

ID (A)

30 0µ

s

25

s

1 0.5

20

k in ts ea H

2

1m

ite fin In

3

ith W

IDR (A)

35

5

50

PT-Ta Characteristics

(TC=25°C)

20

4

40

VDS (V)

TC (°C)

PT (W)

PT

N-channel

15 10

1

5 Without Heatsink

0.1 0 0

0.05 0.5

1.0

VSD (V)

1.5

0 3

5

10

50

VDS (V)

100

600

0

50

100

150

Ta (°C)

139

SMA5125

N-channel + P-channel 3-phase motor drive

External dimensions B

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

Unit

N channel

P channel

VDSS

60

–60

V

VGSS

±20

±20

V

ID

10

–10

A

ID(pulse)

15 (PW≤1ms, duty≤25%)

–15 (PW≤1ms, duty≤25%)

A

4 (Ta=25°C, with all circuits operating, without heatsink)

W

30 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

θ j-a

31.25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

4.166 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Tch

150

°C

Tstg

–40 to +150

°C

PT

•••

■Equivalent circuit diagram 1

Pch 2

8

9 3

Nch 4

7

6

10

11

5

12

Characteristic curves ID-VDS Characteristics (Typical) N-ch 15 14

ID-VGS Characteristics (Typical) P-ch

(Ta=25°C)

–15

4.0V

–12

10

–10

14 12 10

3.3V

6

ID (A)

ID (A)

ID (A)

3.5V

8

–3.5V

–8 –3.3V

3.0V

2

–3.0V

–4

4

VGS=–2.7V

–2

VGS=2.7V

8 6

–6

4

(VDS=10V)

15

–4.0V

–10V

10V

–14

12

N-ch

(Ta=25°C)

Tc=125°C

2

25°C –40°C

0

0 0

2

4

6

8

10

0

–2

–4

VDS (V)

–6

–8

0

–10

0

1

VDS (V)

2

3

4

5

VGS (V)

RDS(ON)-ID Characteristics (Typical) Ta=25°C VGS=4V

N-ch 0.20

Ta=25°C VGS=–10V

P-ch 0.20

P-ch

(VDS=–10V)

–15 –14

0.08

–10 0.12

ID (A)

(ON) (Ω)

0.12

RDS

(ON) (Ω)

RDS

–12

0.16

0.16

–8 –6

0.08

Tc=40°C

–4

25°C

0.04

0.04

–40°C

–2 0

0 0

2

4

6

8

10

12

0

14 15

–2

–4

–6

–8

–10

–12

–14 –15

ID (A)

ID (A) ID=5A VGS=4V

0.20

P-ch 0.20

(ON) (Ω)

RDS

(ON) (Ω)

RDS

0.12

0.08

0.04

0 –40

0.12

0.08

0.04

0

50

TC (°C)

140

ID=–5A VGS=–10V

0.16

0.16

100

150

0 –40

0

50

TC (°C)

0

–1

–2

–3

VGS (V)

RDS(ON)-TC Characteristics (Typical) N-ch

0

100

150

–4

–5

SMA

SMA5125 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

typ

max

Unit

Conditions

V

ID=–100µA, VGS=0V

–60

IGSS

±10

µA

VGS=±20V

±10

µA

VGS=±20V

IDSS

100

µA

VDS=60V, VGS=0V

–100

µA

VDS=–60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=5A

VTH

1.0

Re(yfs)

8.0

–1.0

–2.0 8.7

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–5A

Ω

VGS=4V, ID=5A

pF

VDS=10V,

225

pF

f=1.0MHz,

50

pF

VGS=0V

td (on)

25

ns

ID=5A, VDD 20V,

tr

110

ns

RL=4Ω, VGS=5V,

td (off)

90

ns

RG=50Ω,

180

ns

RG=50Ω,

tf

55

ns

see Fig.3 on page 16.

100

ns

see Fig.4 on page 16.

VSD

1.15

ns

ISD=10A, VGS=0V

–1.25

V

ISD=–10A, VGS=0V

trr

75

V

ISD=5A, di/dt=100A/µs

100

ns

ISD=–5A, di/dt=100A/µs

RDS(ON)

0.14

Ciss

460

Coss Crss

Ω

VGS=–10V, ID=–5A

pF

VDS=–10V,

440

pF

f=1.0MHz,

120

pF

VGS=0V

50

ns

ID=–5A, VDD –20V,

170

ns

RL=4Ω, VGS=–5V,

0.14 1200

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

20

(VDS=10V)

Safe Operating Area (SOA) P-ch

20

10

(VDS=–10V)

N-ch

20

10

100µs

10

IT M

ID (A)

25°C

1

RD

S

(O

N)

LI

Re (yfs) (S)

Re (yfs) (S)

ms

1

10

25°C

s

ED

1m

Tc=–40°C Tc=40°C

1

125°C 125°C

0.1 0.05

Single Pulse Tc=25°C

0.1

1

10

0.1 –0.05 –0.1

20

ID (A)

0.1 0.1

–10 –20

–1

1

10

100

VDS (V)

ID (A)

Capacitance-VDS Characteristics (Typical) N-ch

P-ch

VGS=0V (Ta=25°C) f=1MHz

5000

VGS=0V (Ta=25°C) f=1MHz

5000

P-ch –20

100µs

s 1m

–10

IT M LI N) (O S

100

RD

ID (A)

Capacitance (pF)

Coss

–1

Crss

Crss

10 0

10

20

30

40

Single Pulse Tc=25°C

10

50

0

–10

–20

VDS (V)

–30

–40

–50

–0.1 –0.1

–1

IDR-VSD Characteristics (Typical) (Ta=25°C)

15 14

–10

–100

VDS (V)

VDS (V)

N-ch

PT-Ta Characteristics P-ch

(Ta=25°C)

–15 –14

All Circuits Operating

40 35

–12

12 10 V

30

–6

4

–4

2

–2

0.5

1.0

VSD (V)

1.5

0 0.0

PT (W)

0V

0V –1 S=

6

0 0.0

25

–8

–4 V

0V

8

VG

VG

IDR (A)

S=

–10

4V

10

IDR (A)

Capacitance (pF)

Coss

100

s

Ciss

m

1000

10

ED

Ciss

1000

W

20

ith

In

fin

ite

15

He

at

sin

k

10 5 Without Heatsink –0.5

–1.0

VSD (V)

–1.5

0 0

50

100

150

Ta (°C)

141

SMA5127

N-channel + P-channel 3-phase motor drive

External dimensions B

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

N channel

P channel

Unit

VDSS

60

–60

V

VGSS

±20

20

V

ID

4

–4

ID(pulse)

8 (PW≤1ms, Duty≤1%)

–8 (PW≤1ms, Duty≤1%)

A A

4 (Ta=25°C, with all circuits operating, without heatsink)

PT

•••

W

28 (Tc=25°C,with all circuits operating, with infinite heatsink)

W

θ j-a

31.25 (Junction-Air, Ta=25°C, with all circuits operating)

°C/W

θ j-c

4.46 (Junction-Case, Tc=25°C, with all circuits operating)

°C/W

Tch

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 1

Pch 2

8

9 3

Nch 4

7

6

10

11

5

12

Characteristic curves ID-VDS Characteristics (Typical) N-ch 8

ID-VGS Characteristics (Typical) P-ch

(Ta=25°C)

N-ch

(Ta=25°C)

–8

Ta=–40°C

7

–10

V

10V

(VDS=10V)

8

4.5V

6

25°C

–6

–4.5V

125°C

6

4.0V

4 3.5V

ID (A)

ID (A)

ID (A)

5

–4.0V –4 –3.6V

2

0 0

2

4

6

8

0 0

10

–2

–4

3

–3.2V

2

VGS=–2.7V

1

–2

VGS=3.0V

4

–6

–8

0

–10

0

1

2

VDS (V)

VDS (V)

3

4

5

6

7

VGS (V)

RDS(ON)-ID Characteristics (Typical) N-ch

P-ch (Ta=25°C)

0.6

P-ch (Ta=25°C)

0.6

(VDS=–10V)

–8 Tc=–40°C

VGS=–4V

0.5 –6

10V

0.3

25°C

0.4 125°C

–10V

ID (A)

0.4

(ON) (Ω)

=4V VGS

0.3

RDS

RDS

(ON) (Ω)

0.5

0.2

0.2

0.1

0.1

–4

–2

0 0

1

2

3

4

5

6

7

0 0

8

–2

–4

ID (A)

–6

RDS(ON)-TC Characteristics (Typical) ID=2A VGS=4V

N-ch

0.6

0.6

(ON) (Ω)

0.7

RDS

0.5

0.3

0.3

0

25

50

75

Ta (°C)

142

0.5

0.4

0.4

100

125

150

0.2 –40 –25

0

25

50

75

Ta (°C)

0

0

–1

–2

–3

–4

VGS (V)

ID=–2A VGS=–10V

P-ch 0.8

0.7

RDS

(ON) (Ω)

0.8

0.2 –40 –25

–8

ID (A)

100

125

150

–5

–6

–7

SMA

SMA5127 Electrical characteristics

(Ta=25°C)

N channel Symbol

Specification min

V(BR)DSS

typ

max

60

P channel Specification

Unit

Conditions

V

ID=100µA, VGS=0V

min

typ

max

–60

Unit

Conditions

V

ID=–100µA, VGS=0V

IGSS

±10

µA

VGS=±20V

10

µA

VGS= 20V

IDSS

100

µA

VDS=60V, VGS=0V

–100

µA

VDS=–60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=2A

VTH

1.0

Re(yfs)

2.5

RDS(ON)

0.55

Ciss

150

–1.0

–2.0 3

V

VDS=–10V, ID=–250µA

S

VDS=–10V, ID=–2A

Ω

VGS=4V, ID=2A

Ω

VGS=–10V, ID=–2A

pF

VDS=10V

320

pF

VDS=–10V,

0.55

Coss

70

pF

f=1.0MHz

130

pF

f=1.0MHz,

Crss

15

pF

VGS=0V

40

pF

VGS=0V

td (on)

12

ns

tr

40

ns

td (off)

40

ns

tf

25

ns

VSD

1.2

V

trr

75

ID=2A, VDD 20V, RL=10Ω, VGS=5V, see Fig.3 on page 16. ISD=4A, VGS=0V ISD=2A, VGS=0V,

ns

20

ns

95

ns

70

ns

60

ns

–1.1

V

75

di/dt=100A/µs

ID=–2A, VDD –20V, RL=10Ω, VGS=–5V, see Fig.4 on page 16. ISD=–4A, VGS=0V ISD=–2A, VGS=0V,

ns

di/dt=100A/µs

Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch

Safe Operating Area (SOA) P-ch

(VDS=10V)

5

5

N-ch

(VDS=–10V)

(Tc=25°C)

10

Ta=–40°C

100µs

Tc=–40°C 1ms

25°C

1

125°C

0.1 0.01

1

0.1

10ms RDS (on) LIMITED

1

125°C

ID (A)

Re (yfs) (S)

Re (yfs) (S)

25°C

0.1 –0.05

8

–0.1

0.1

–8

–1

ID (A)

1

1

ID (A)

10

100

VDS (V)

Capacitance-VDS Characteristics (Typical) N-ch

VGS=0V (Ta=25°C) f=1MHz

NPN 1000

P-ch

P-ch

VGS=80V (Ta=25°C) f=1MHz

PNP 1000

(Tc=25°C) –10

100µs 1ms

Ciss

100

Coss

10

10ms RDS (ON) LIMITED

100

10

20

30

40

Coss

–1

Crss

10

Crss

5 0

ID (A)

Capacitance (pF)

Capacitance (pF)

Ciss

5 0

50

–10

VDS (V)

–20

–30

–40

–50

–0.1 –1

–10

DR-V -VGS SD Characteristics (Typical) VIDS

N-ch

PT-Ta Characteristics P-ch

(Ta=25°C)

5

(Ta=25°C)

–5

4

–4

3

–3

30 With Silicon Grease Natural Cooling All Circuits Operating

25

fin ite

15

He at sin

PT (W)

In

–2

k

VDS (V)

ith

2

W

20

VDS (V)

–100

VDS (V)

VDS (V)

10 ID=4A

1

–1

5 Without Heatsink

2A

0 2

10

VGS (V)

20

0

0 –2

–10

VGS (V)

–20

0

50

100

150

Ta (°C)

143

SMA6010

PNP + NPN Darlington 3-phase motor drive

External dimensions B

Absolute maximum ratings

•••

SMA

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

4

–4

A

ICP

6 (PW≤1ms, Du≤50%)

–6 (PW≤1ms, Du≤50%)

A

IB

0.5

–0.5

A

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

θ j–c

6.25

°C/W

■Equivalent circuit diagram 1 R3

R4

2

8

4 R1

9

3

7

6

11

10

R2

5

12

R1: 3kΩ typ R2: 200Ω typ R3: 2kΩ typ R4: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

6

–6 2.0mA

1.2mA

–1.2mA

5

0.8mA

–1.0mA –0.9mA

4

–4

0.6mA 0.5mA

–0.8mA

2

4

75°C

0 0

6

–2

VCE (V)

–4

–6

1 0 0

1

–30°C

2

125 °C

–2

Ta=

0 0

3

25°C

0.4mA

2

(VCE=4V)

–1.5mA

IC (A)

IC (A)

4

NPN 6

–1.8mA

IB=–2.2mA

IC (A)

IB=4.0mA

2

3

VBE (V)

VCE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

10000

PNP

(VCE=–4V)

20000

20000

(VCE=–4V)

–6

10000 –5

typ

5000

5000

typ

IC (A)

hFE

1000

1000

–3

75°C 25°C

500

500

100

100 50 0.03

0.05 0.1

0.5

1

50 –0.03

56

–0.05 –0.1

–0.5

IC (A)

–1

–5 –6

IC (A)

(VCE=4V)

20000

20000

10000

10000

PNP

° 25

C

Ta

25

=1

Ta

75°C

1000

hFE

1000

hFE

(VCE=–4V)

5000

5000

25°C 0°

C

500

–3

°C

=1

C 0° –3

500

75°C

0.05 0.1

0.5

IC (A)

144

25°C

100

100

1

56

50 –0.03

–0.05 –0.1

–0.5

IC (A)

0 0

–1

–2

VBE (V)

hFE-IC Temperature Characteristics (Typical) NPN

50 0.03

Ta=1

–1

25°C

–2

–30°C

hFE

–4

–1

–5 –6

–3

SMA6010 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

2000

5000

Specification

Unit

Conditions

10

µA

VCB=60V

10

mA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=3A

2000

max

ICBO

PNP

12000

VCE(sat)

1.5

V

VBE(sat)

2.0

V

VFEC

1.8

V

IFEC=1A

min

typ

5000

IC=3A, IB=6mA

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–20mA

max

12000

VCE=–4V, IC=–3A

–1.5

V

–2.0

V

–1.8

V

IFEC=–1A

IC=–3A, IB=–6mA

ton

1.0

µs

VCC 30V,

0.4

µs

VCC –30V,

tstg

4.0

µs

IC=3A,

0.8

µs

IC=–3A,

tf

1.5

µs

IB1=–IB2=10mA

0.6

µs

IB1=–IB2=–10mA

fT

75

MHz

VCE=12V, IE=–0.1A

200

MHz

VCE=–12V, IE=0.2A

Cob

50

pF

VCB=10V, f=1MHz

75

pF

VCB=–10V, f=1MHz

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

–3

2

–2

20

IC=4A IC=2A

1

IC=–4A

–1

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

5

IC=–2A IC=–1A

IC=1A

1

0 0.2

0.5

1

5

10

0 –0.3 –0.5 –1

50 100 200

–5

IB (mA)

–10

0.5 1

–50 –100 –200

5

3

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

50 100

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

10

IB (mA)

(IC / IB=1000)

20

tsin

PT (W)

°C 125

°C

10

ea

–3 0

eH

Ta =

init k

1

25°C 75°C

Inf

VCE (sat) (V)

15 –2

ith

2

W

VCE (sat) (V)

75°C

25°C

–3

Ta=–30°C

–1

5

Without Heatsink

125°C

0 0.5

1

5

0 –0.5

6

IC (A)

–1

–5 –6

IC (A)

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN –10

5

–5 10 s m

IC (A)

1 0.5

0.1

–1 –0.5

–0.1 Single Pulse

Single Pulse

0.05 Without Heatsink 0.03 3

s 1m

s 1m

s m 10

IC (A)

PNP

10

–0.05 Without Heatsink

Ta=25°C

5

10

50

VCE (V)

100

–0.03 –3

Ta=25°C

–5

–10

–50

–100

VCE (V)

145

SMA6014

PNP + NPN Darlington 3-phase motor drive

External dimensions B

Absolute maximum ratings

•••

SMA

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

2

–2

A

ICP

3 (PW≤1ms, Du≤50%)

–3 (PW≤1ms, Du≤50%)

A

IB

0.5

–0.5

A

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

θ j–c

6.25

°C/W

■Equivalent circuit diagram 1 R1 R2

8

9

3

7

6

11

2

4

10

R3

12

5

R1: 4kΩ typ R2: 100Ω typ R3: 3kΩ typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

6

NPN

mA IB= –10 .0m A –5 .0 m A

–2.0mA

2

–1.2mA –1.0mA

–2

–0.6mA –0.5mA

0.3mA

2

1

–0.4mA

–1 –0.3mA

0 0

2

4

0 0

6

–1

–2

VCE (V)

–3

–4

–5

C

–0.8mA

25°

0.4mA

–30 °C

IC (A)

IC (A)

4

Ta=1 25°C

–3

75°C

1.0mA

0.6mA

IC (A)

2.0

(VCE=4V)

3

–4 IB=4.0mA

0

–6

0

1

VCE (V)

2

VBE (V)

hFE-IC Characteristics (Typical) (VCE=4V)

NPN

20000

PNP

5000

(VCE=–4V)

PNP

–3

(VCE=–4V)

typ

10000

typ

5000 –2

IC (A)

hFE

hFE

1000

500

1000

–1 Ta= 125 75° °C C 25° C –30 °C

500

100

100 0.03 0.05

0.1

0.5

1

50 –0.02

3

IC (A)

0

–0.05

–0.1

–0.5

–1

–3

hFE-IC Temperature Characteristics (Typical) NPN

20000

(VCE=4V)

PNP

10000

10000

°C 25 =1 Ta °C 75

75°C 25°C

25

1000

°C 25 =1 Ta

1000

hFE

hFE

(VCE=–4V)

5000

5000

°C

–3

500

0° –3

C

0°

C

500

100 100 0.03 0.05

0.1

0.5

IC (A)

146

1

3

50 –0.02

–0.05

–0.1

–0.5

IC (A)

0

–1

–2

VBE (V)

IC (A)

–1

–3

–3

SMA6014 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

1500

4000

Conditions

10

µA

VCB=60V

10

µA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=1A

2000

10000

VCE(sat)

1.5

V

VBE(sat)

2.2

VFEC

Specification

Unit

max

ICBO

PNP

min

typ

4000

Unit

Conditions

–10

µA

VCB=–60V

–5

mA

VEB=–6V

V

IC=–10mA

max

10000

VCE=–4V, IC=–1A

–1.5

V

V

–2.2

V

—

V

–1.8

V

IFEC=–1A

trr

—

µs

ton

0.7

µs

tstg

5.0

tf

3.0

fT

20

Cob

45

IC=1A, IB=2mA

IC=–1A, IB=–2mA

3.0

µs

IFEC=±100mA

VCC 30V,

0.4

µs

VCC –30V,

µs

IC=1A,

1.0

µs

IC=–1A,

µs

IB1=–IB2=2mA

0.4

µs

IB1=–IB2=–2mA

MHz

VCE=12V, IE=–1A

100

MHz

VCE=–12V, IE=0.1A

pF

VCB=10V, f=1MHz

30

pF

VCB=–10V, f=1MHz

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

–3

2

(IC=–1A)

NPN

20

1

IC=1A

–30°C

25°C

75°C

θ j–a (°C / W)

IC=2A

Ta=125°C

VCE (sat) (V)

VCE (sat) (V)

10

–2

–1

5

1

0 0.1

0.5

1

5

0 –0.1

10

–0.5

–1

0.5 1

–3

5

10

50 100

500 1000

PW (mS)

IB (mA)

IB (mA)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

PNP

(IC / IB=1000)

2

PNP

(IC / IB=1000)

–3

20

–30°C

1

75°C

°C Ta=125

–2

–30°C

–1

25°C

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

75°C

25°C

5

Ta=125°C

1

0 0.5

1

0 –0.2

3

IC (A)

–0.5

–1

0.5 0.2

–3

1

5 10

50 100

500 1000

PW (mS)

Safe Operating Area (SOA) NPN

5

0.5

IC (A)

PT-Ta Characteristics PNP

–5

20 10

10

s 1m

s

s

15

m s

ms

100µs

1m

10

1

0µ

–1 W ea tsin

PT (W)

10

eH

IC (A)

init

–0.5

Inf

IC (A)

ith

0.5

k

Single Pulse –0.05 Without Heatsink Ta=25°C

Single Pulse 0.05 Without Heatsink Ta=25°C

0.03

5

–0.1

0.1

3

5

10

50

VCE (V)

100

–0.03 –3

–5

–10

–50

VCE (V)

–100

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

147

SMA6511

PNP + NPN Darlington Stepper motor driver with dual supply voltage switch

External dimensions B

Absolute maximum ratings

•••

SMA

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

100±15

–60

V

VCEO

100±15

–60

V

VEBO

6

–6

V

ICP

1.5

–3

A

IB

0.5

–0.5

A

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 12 R3 R4

10 11

4

2

9

7 8

6

3

1 R1 R2

5

R1: 4kΩ typ R2: 150Ω typ R3: 4kΩ typ R4: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN 2mA

1mA

IB=–1 0.0m A –5.0 mA

–3 5mA

0.5mA

2

–1.0mA

–0.8mA

2

–0.6mA

IC (A)

IC (A)

(VCE=4V)

–1.2mA

–2

0.3mA

NPN

3 mA

–2.0

IC (A)

3

PNP

–0.5mA –0.4mA

1 Ta= 125 °C 75°C 25°C

–1 –0.3mA

0

1

2

3

4

5

0 0

6

–1

–2

–3

VCE (V)

–4

–5

0 0

–6

–30°C

0.2mA

1

1

2

3

VBE (V)

VCE (V)

hFE-IC Characteristics (Typical) NPN

20000

(VCE=4V)

PNP

5000

(VCE=–4V)

PNP

–3

(VCE=–4V)

typ

10000 typ

5000

–2

IC (A)

hFE

hFE

1000 1000

500

75°C

500

0.05

0.1

0.5

1

50 –0.02

3

25° C –30 °C

100

100 50 0.03

–0.05

–0.1

–0.5

IC (A)

–1

–3

IC (A)

NPN

20000

PNP

(VCE=4V)

(VCE=–4V)

10000 75°C

10000

25°C

5000

°C 25 °C =1 75 °C Ta 25

hFE

hFE

5000

1000

C 0°

–3

25

°C

C 0° –3

500

500

100

100 50 0.03 0.05

=1 Ta

1000

0.1

0.5

IC (A)

1

3

50 –0.02

–0.05

–0.1

–0.5

IC (A)

0 0

–1

–2

VBE (V)

hFE-IC Temperature Characteristics (Typical)

148

Ta= 125 °C

–1

–1

–3

–3

SMA6511 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

Unit

Conditions

10

µA

VCB=85V

max

ICBO IEBO VCEO

85

100

hFE

2000

VCE(sat)

PNP Specification min

5

mA

VEB=6V

115

V

IC=10mA

–60

VCE=4V, IC=1A

2000

1.5

V

typ

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–1A

IC=1A, IB=2mA

–1.5

V

IC=–1A, IB=–2mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

–3

3

NPN

(IC=–1A) 20

IC=1A

0 0.1

0.5

1

5

10

–30°C

75°C

–1

0 –0.1

50 100

θ j–a (°C / W)

1

Ta=125°C

VCE (sat) (V)

VCE (sat) (V)

IC=2A

–2

25°C

10 2

–0.5

–1

5

1 1

–5

5

10

50 100

IB (mA)

IB (mA)

500 1000

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

PNP

(IC / IB=1000)

PNP

(IC / IB=1000)

–3

3

20

VCE

25°C 75°C

1

Ta=–30°C

–2

25°C

–1

0.5

30°C Ta=–

125°C

1

0 –0.2

3

5

75°C

125°C

0 0.3

θ j–a (°C / W)

VCE (sat) (V)

2

(sat)

(V)

10

1

–0.5

IC (A)

–1

–3

0.5 0.2

10

50 100

500 1000

PT-Ta Characteristics PNP

–5

1

5

PW (mS)

Safe Operating Area (SOA) NPN

1.5

0.5 1

IC (A)

20

–3 10 0µ

50µs

s

15

10

eH ea

PT (W)

init tsin

–0.5

Inf

–1

ith

IC (A)

W

ms 10

IC (A)

s 1m

s

100µs

10m

1ms

0.5

k

0.1

5 Single Pulse Without Heatsink Ta=25°C

0.05 Single Pulse Without Heatsink Ta=25°C

0.03 3

5

10

50

VCE (V)

100

200

–0.1 –3

–5

–10

–50

VCE (V)

–100

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

149

SMA6512

PNP + NPN Darlington Stepper motor driver with dual supply voltage switch

External dimensions B

Absolute maximum ratings

•••

SMA

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60±10

–60

V

VCEO

60±10

–60

V

VEBO

6

–6

V

ICP

1.5

–3

A

IB

0.5

–0.5

A

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 12 R3 R4

10 11

4

2

9

7 8

6

3

1 R1 R2

5

R1: 3.5kΩ typ R2: 200Ω typ R3: 4kΩ typ R4: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

3 mA

2.0

–1.0mA

3mA

–0.8mA

2

–0.6mA

IC (A)

IB = 1

0.

–1.2mA

–2

A 0.4m

IC (A)

2

0.0m

A

A 0.6m

(VCE=4V)

mA

I B= – 1

mA 1.0

–2.0

NPN

3

–3

A

Ta=125°C

IC (A)

0m

0.0m A –5.0 mA

5.

–0.5mA

75°C

–0.4mA

1

1

–1 –0.3mA

0 0

1

2

3

4

5

0 0

6

–1

–2

–3

–4

–5

25°C –30°C

0 0

–6

1

VCE (V)

VCE (V)

2

3

VBE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

20000

(VCE=–4V)

5000

–2

500

75°C

100

Ta= 125 °C

–1

25° C

100

50 0.05

0.1

0.5

1

50 –0.02

3

–0.05

–0.1

IC (A)

–0.5

–1

–3

hFE-IC Temperature Characteristics (Typical) (VCE=4V)

PNP

10000

(VCE=–4V)

25°C

10000

75°C

5000

500

°C 25 C =1 75° C Ta ° 25 °C 0 –3

hFE

hFE

5000

1000

1000

Ta

°C 25 =1

500

–3

0°

C

100 100

50 30 0.02

0.5

0.05 0.1

IC (A)

150

1

3

50 –0.02

–0.05

–0.1

–0.5

IC (A)

–1

–2

VBE (V)

IC (A)

NPN

20000

0 0

–30 °C

hFE

500

IC (A)

1000

1000

30 0.02

(VCE=–4V)

typ

5000

hFE

PNP

–3

typ

10000

–1

–3

–3

SMA6512 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

50

hFE

2000

Unit

Conditions

10

µA

VCB=50V

max

ICBO

Specification min

5

mA

VEB=6V

70

V

IC=10mA

–60

VCE=4V, IC=1A

2000

1.5

V

60

VCE(sat)

PNP

typ

Unit

Conditions

–10

µA

VCB=–60V

–5

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–1A

IC=1A, IB=2mA

–1.5

V

IC=–1A, IB=–2mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Temperature Characteristics (Typical) NPN

30

25°C

–30°C

10

θ j–a (°C / W)

1

75°C

–2

Ta=125°C

75°C 25°C

NPN

(IC=–1A)

–30°C

Ta=125°C

2

PNP

–3

VCE (sat) (V)

VCE (sat) (V)

3

(IC=1A)

–1

5

1

0 0.1

0.5

1

0 –0.1

5

–0.5

–1

–5

0.5 0.2

0.5 1

IB (mA)

IB (mA)

5

10

50 100

500 1000

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

(IC / IB=1000)

PNP

–3

PNP

(IC / IB=1000) 20

10

1

–2

25°C

–1

θ j–a (°C / W)

2

VCE (sat) (V)

VCE (sat) (V)

Ta=125

°C 75°C 25°C –30°C

3

30°C

Ta=–

75°C 125°C

0 0.2

0 –0.2

3

1

0.5

5

1

–0.5

–1

0.5 0.2

–3

50 100

20

s

–3 10

s 10m

100µs

1m

–5

0µ s

15 W

s 1m

ith

0.5

PT (W)

IC (A)

tsin k

3

5

Single Pulse Without Heatsink Ta=25°C

50

10

VCE (V)

100

–0.1 –3

ea

10

5

0.1 Single Pulse Without Heatsink Ta=25°C

eH

IC (A)

init

ms

Inf

10

–1

–0.5

0.05

5001000

PT-Ta Characteristics PNP

1.5

5 10

PW (mS)

Safe Operating Area (SOA) NPN 1

0.5 1

IC (A)

IC (A)

–5

–10

–50

VCE (V)

–100

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

151

STA301A Absolute maximum ratings

NPN Darlington With built-in avalanche diode

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

4

A

hFE

1000

ICP

8 (PW≤10ms, Du≤50%)

A

VCE(sat)

W

15 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

STA (8-pin)

(Ta=25°C)

Specification min typ max

Symbol

PT

•••

Electrical characteristics

(Ta=25°C)

3 (Ta=25°C)

External dimensions C

60

Unit

Conditions

100

µA

VCB=50V

10

mA

VEB=6V

70

V

IC=10mA VCE=4V, IC=3A

V

IC=3A, IB=10mA

ton

1.0

2.0

µs

VCC 30V,

tstg

4.0

µs

IC=3A,

tf

1.5

µs

IB1=–IB2=10mA

■Equivalent circuit diagram 3

5

2 1

7

4 R1

6

R2

8 R1: 3kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 5

hFE-IC Characteristics (Typical)

IB=

2.0

(VCE=4V)

20000

mA

10000

10000 typ

1.0mA

4

5000

0.8mA

5000

0.6mA

3

hFE

0.5mA

hFE

IC (A)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

20000

1000

=1

25

°C °C 25

1000

0.4mA

2

Ta

C 0° –3

500 500

1

0.3mA

100 0

0

1

2

3

50 0.05

4

100

0.5

0.1

VCE (V)

4

0.05

0.1

0.5

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical)

1

4

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

2

1

IC-VBE Temperature Characteristics (Typical) (VCE=4V)

4

3

0.5

1

0 0.2

4

0.5

1

IC (A)

1

5 10

0 0

50 100

1

θ j-a-PW Characteristics

PT-Ta Characteristics

Safe Operating Area (SOA) 10

16 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

14

5 1m s

10

IC (A)

eH

4

50×50×2

k

6

tsin

8

ea

PT (W)

10

init

5

Inf

θ j–a (°C / W)

ith

ms

W

12

10

Without Heatsink

Single Pulse

0.1 Without Heatsink

2

5

10

50 100

PW (mS)

152

500 1000

0 –40

1 0.5

25×50×2

1.0

0.5 1

2

VBE (V)

IB (mA)

30

–30°C

IC=2A

1 IC=1A

0 0.1

2 75°C

125°C

IC=4A IC=3A

25°C

25°C

Ta=1 25°C

Ta=–30°C

1

IC (A)

VCE (sat) (V)

VCE (sat) (V)

3 2

Ta=25°C

0

50

Ta (°C)

100

150

0.05 3

5

10

50

VCE (V)

100

STA302A Absolute maximum ratings

PNP Darlington General purpose/3-phase motor drive

Ratings

Unit

Symbol

VCBO

–50

V

ICBO

VCEO

–50

V

IEBO

VEBO

–6

V

VCEO

–50

IC

–4

A

hFE

1000

ICP

–8 (PW≤10ms, Du≤50%)

A

VCE(sat)

W

15 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

STA (8-pin)

(Ta=25°C)

Specification min typ max

Symbol

PT

•••

Electrical characteristics

(Ta=25°C)

3 (Ta=25°C)

External dimensions C

Unit

Conditions

–100

µA

VCB=–50V

–10

mA

VEB=–6V

V

IC=–10mA VCE=–4V, IC=–3A

V

IC=–3A, IB=–10mA

ton

0.4

–2.0

µs

VCC –30V,

tstg

0.8

µs

IC=–3A,

tf

0.6

µs

IB1=–IB2=–10mA

■Equivalent circuit diagram 1

8 R1

R2

2

4

6

3

5

7

R1: 2kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

mA

–1.8 .3mA

–1.5m

A

IB=–2

–1.2m

hFE

IC (A)

typ

5000

A

–1.0mA –0.9mA –0.8mA

–2

(VCE=–4V)

10000

5000

1000

1000

500

500

hFE

–3

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

=1 Ta

25

°C °C 25

0°

C

–3

–1

0 0

–1

–2

–3

–4

–5

100

100

50

50

20 –0.03 –0.05 –0.1

–6

VCE (V)

–0.5

–1

20 –0.02

–5 –6

–0.05 –0.1

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Characteristics (Typical)

–1

–4

IC-VBE Temperature Characteristics (Typical) (VCE=–4V)

(IC / IB=500)

–2

–0.5

IC (A)

–6

–3

25°C 125°C

75°C

–4

25°C

–3

IC=–4A

–1

–2

IC=–2A

–30°C

–1

–2

Ta=12 5°C

Ta=–30°C

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–5

IC=–1A

–1

0 –0.7

–1

0 –0.2

–4

–0.5 –1

–5

–10

0 0

–50 –100

–1

θ j-a-PW Characteristics

PT-Ta Characteristics

20

Safe Operating Area (SOA)

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

14 10

–5

1m

IC (A)

ea tsin

50×50×2

k

PT (W)

eH

θ j–a (°C / W)

init

10

ms

Inf

10

ith

s

W

12

8

–3

–10

16

5

–2

VBE (V)

IB (mA)

IC (A)

–1 –0.5

6 25×50×2 4 10

Without Heatsink

–0.1 Single Pulse

2 0.5 1

5

10

50

100

PW (mS)

500 1000

0 –40

–0.05 Without Heatsink 0

50

Ta (°C)

100

150

–0.03 –3

Ta=25°C

–5

–10

–50

–100

VCE (V)

153

STA303A Absolute maximum ratings

NPN Darlington General purpose/3-phase motor drive

Ratings

Unit

Symbol

VCBO

120

V

ICBO

VCEO

100

V

IEBO

VEBO

6

V

VCEO

100

IC

4

A

hFE

1000

ICP

8 (PW≤10ms, Du≤50%)

A

VCE(sat)

W

15 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

STA (8-pin) (Ta=25°C)

Specification min typ max

Symbol

PT

•••

Electrical characteristics

(Ta=25°C)

3 (Ta=25°C)

External dimensions C

Unit

Conditions

100

µA

VCB=120V

10

mA

VEB=6V

V

IC=10mA VCE=4V, IC=2A

V

IC=2A, IB=10mA

ton

0.8

2.0

µs

VCC 40V,

tstg

5.0

µs

IC=2A,

tf

2.0

µs

IB1=–IB2=10mA

■Equivalent circuit diagram 3

5

2 1

7

4 R1

6

R2

8

R1: 3kΩ typ R2: 500Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

1m

IB=

A

A 0.8m

0.5mA

5000

5000

A

2

1000

hFE

hFE

IC (A)

10000

typ

0

0.4m

(VCE=4V)

20000

10000

.6mA

3

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

20000

4

0.3mA

=1 Ta

1000

500

25

°C °C

25

500

C 0°

–3

1 100 0 0

1

2

3

4

5

100

50 0.02

0.05

0.1

1

50 0.02

4

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

0.05 0.1

0.5

1

4

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

3

0.5

IC-VBE Temperature Characteristics (Typical)

3

(VCE=4V)

4

1

Ta=–30°C

1

0.5

1

0 0.2

4

0.5

1

5

10

50

100

0

1

2

IC (A)

IB (mA)

VBE (V)

θ j-a-PW Characteristics

PT-Ta Characteristics

Safe Operating Area (SOA)

20

16

10 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

14

5 ms 10

12 W

10

Inf eH ea

8

tsin

50×50×2

4

1 0.5

k

6 25×50×2

1.0

IC (A)

init

PT (W)

ith

5

s 1m

10

θ j–a (°C / W)

25°C

1

IC=1A

0 0.2

–30°C

IC=3A

IC=2A

25°C

125°C

2

Ta =

IC=4A

125 °C 75°C

2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

3 2

Without Heatsink

0.1

2

Single Pulse

0.05 Without Heatsink

0.5 1

5

10

50

PW (mS)

154

100

500 1000

0 –40

0

50

Ta (°C)

100

150

Ta=25°C

0.03 3

5

10

50

VCE (V)

100

200

STA304A Absolute maximum ratings

NPN Darlington 3-phase motor drive

External dimensions C

Unit

Symbol

VCBO

550

V

ICBO

VCEO

550

V

IEBO

VEBO

6

V

VCEO

550

IC

1

A

hFE

200

ICP

2 (PW≤1ms, Du≤25%)

A

IB

0.5

A

3 (Ta=25°C)

(Ta=25°C)

Specification min typ max

Ratings

Unit

Conditions

100

µA

VCB=550V

75

150

mA

VEB=6V

400

1000

VCE(sat)

1.0

1.5

V

VBE(sat)

1.5

2.2

V

VFEC

1.1

1.5

V

IFEC=1A

ton

0.5

µs

VCC 200V,

W

15 (Tc=25°C)

STA (8-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

IC=100µA

V

VCE=4V, IC=500mA IC=500mA, IB=10mA

Tj

150

°C

tstg

3.5

µs

IC=500mA,

Tstg

–40 to +150

°C

tf

0.7

µs

IB1=–IB2=10mA

fT

15

MHz

VCE=12V, IE=–0.2A

Cob

35

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

3

5

2

7

4

6

R1 R2

1

8

R1: 500Ω typ R2: 70Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 1.0 10m A

IB=20mA

hFE-IC Characteristics (Typical)

5m

0.8

A

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

1000

(VCE=4V)

1000

500

500

°C 25 =1 °C Ta 75 °C 25 C 0° –3

0.6

hFE

IC (A)

2mA

hFE

typ

100

100

0.4

50

50

1.5mA

0.2

0 0

1

2

3

4

5

10 0.03

6

0.05

0.1

0.5

VCE(sat)-IC Temperature Characteristics (Typical)

10 0.03

2

0.05

0.1

0.5

1

2

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=100)

3

1

IC (A)

VCE (V)

IC-VBE Temperature Characteristics (Typical)

3

(VCE=4V)

2.0

°C

1

75°C

1 IC=0.5A

0 0.2

0.5

1

0

2

5

1

10

50

100

IC (A)

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

20

0.5

0 0

500

IC (A)

PT (W)

s

25×50×2

k

50×50×2

6

tsin

8

ea

500 1000

0µ

eH

init

50 100

PW (mS)

10

ms

In f

10

0.1 0.05

Without Heatsink

0.01

10

s

10

ith

0.5

2 5

1m

1

W

12

4

3

Safe Operating Area (SOA)

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

14

1.0

2

5

16

5

1

VBE (V)

10

θ j–a (°C / W)

1.0

IC=1A

125°C

0.5 1

Ta=1 25°C 75°C 25°C –30°C

Ta=–30

25°C

2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

1.5 2

0 –40

Single Pulse

0.005 Without Heatsink

0

50

Ta (°C)

100

150

0.003

Ta=25°C

3

5

10

50

100

500 600

VCE (V)

155

STA305A

PNP Darlington 3-phase motor drive

Absolute maximum ratings

External dimensions C

Unit

Symbol

VCBO

–550

V

ICBO

VCEO

–550

V

IEBO

VEBO

–6

V

VCEO

–550

IC

–1

A

hFE

200

ICP

–2 (PW≤1ms, Du≤25%)

A

IB

–0.5

A

3 (Ta=25°C)

(Ta=25°C)

Specification min typ max

Ratings

Unit

Conditions

–100

µA

VCB=–550V

–10

–20

mA

VEB=–6V

400

1000

VCE(sat)

–1.0

–1.5

V

VBE(sat)

–1.6

–2.2

V

W

15 (Tc=25°C)

STA (8-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

IC=–100µA

V

VCE=–4V, IC=–500mA IC=–500mA, IB=–10mA

ton

0.7

µs

VCC –200V,

tstg

13.0

µs

IC=–500mA,

Tj

150

°C

tf

2.5

µs

IB1=–IB2=–10mA

Tstg

–40 to +150

°C

fT

15

MHz

VCE=–12V, IE=0.2A

Cob

48

pF

VCB=–10V, f=1MHz

■Equivalent circuit diagram 1

8 R1 R2

2

4

6

3

5

7

R1: 500Ω typ R2: 70Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

–

m 10

1000

A

mA –5

–0.8

(VCE=–4V)

1000

500

500 typ

mA –2

Ta

–1.5

mA

hFE

–0.6

hFE

IC (A)

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

IB=–20mA

–1.0

100

°C 25 °C 75 C ° 25

=1

–3

0°

C

100

–0.4

50

50

–0.2

0 0

–1

–2

–3

–4

–5

10 –0.03 –0.05

–6

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

–0.5

–1

10 –0.03 –0.05

–2

–0.1

–0.5

–1

–2

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=100)

–3

–0.1

–3

(VCE=–4V)

–2.0

75°C

–1

–1.0

Ta=1 25°C 75°C 25°C –30°C

Ta=125°C

–2

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–1.5 –2

IC=1A

–1

IC=0.5A 25°C

–0.5

–30°C

0 –0.2

–0.5

–1

0 –1

–2

–5

–50 –100

–10

IC (A)

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

20

0 0

–500

–1

–2

Safe Operating Area (SOA) –5

16

10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

14

10

Inf init tsin

4

k

6 25×50×2

1.0

IC (A)

50×50×2

ea

8

eH

PT (W)

ith

θ j–a (°C / W)

W

–0.5

–0.1 –0.05

Without Heatsink

–0.01

2 –0.005

0.5 1

5

10

50 100

PW (mS)

156

500 1000

s

s m 10

–1

12

s 0µ

1m

10

5

–3

VBE (V)

0 –40

0

50

Ta (°C)

100

150

–0.003 –3

Single Pulse Without Heatsink Ta=25°C

–5

–10

–50

VCE (V)

–100

–500 –600

STA308A Absolute maximum ratings

PNP Darlington General purpose

External dimensions C

(Ta=25°C)

Specification min typ max

Ratings

Unit

Symbol

VCBO

–120

V

ICBO

VCEO

–120

V

IEBO

VEBO

–6

V

VCEO

–120

IC

–4

A

hFE

2000

–1

A

VCE(sat)

–1.5

V

VBE(sat)

–2.5

V

3 (Ta=25°C)

PT

STA (8-pin)

Electrical characteristics

(Ta=25°C)

Symbol

IB

•••

W

Unit

Conditions

–10

µA

VCB=–120V

–10

mA

VEB=–6V

V

IC=–10mA VCE=–4V, IC=–2A IC=–2A, IB=–4mA

15 (Tc=25°C) Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 1

8 R1

R2

2

4

6

3

5

7

R1: 5kΩ typ R2: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

IB=–5mA

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

–4

(VCE=–4V)

10000

–2mA

75°C 25°C

–1.5mA

5000

5000 typ

–3

–1.0mA

25

–2 –0.5mA

°C

=1

1000

hFE

1000

–0.7mA

hFE

IC (A)

Ta

500

500

100

100

C 0° –3

–1 –0.3mA

0 0

–1

–2

–3

–4

–5

50 –0.03 –0.05

–6

–0.1

VCE(sat)-IC Temperature Characteristics (Typical)

–1

50 –0.03 –0.05

–4

–0.1

–0.5

–1

–4

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–0.5

IC (A)

VCE (V)

–3

(VCE=–4V)

–4

75°C

25°C

Ta=–30°C

–2

IC (A)

IC=–4A

–2

IC=–2A

–1

Ta=12 5°C 75°C 25°C –30° C

–1

VCE (sat) (V)

VCE (sat) (V)

–3 –2

IC=–1A

–1

125°C

0 –0.2

–0.5

–1

0 –0.1

–4

–0.5 –1

–5 –10

IC (A)

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

20

–1

–2

–3

VBE (V)

Safe Operating Area (SOA) –10

16

ms 10

s 1m

W

12

–5

s 0µ 10

With Silicone Grease Single Pulse Without Heatsink Ta=25°C in mm

14 10 ith

–1 ea tsin

8

IC (A)

eH

50×50×2

k

PT (W)

10

init

5

In f

θ j–a (°C / W)

0 0

–50 –100

–0.5

6 25×50×2 4 1

–0.1

Without Heatsink

Single Pulse

2 0.5 1

5

10

50

PW (mS)

100

500 1000

0 –40

–0.05 Without Heatsink Ta=25°C

0

50

Ta (°C)

100

150

–0.03 –3

–5

–10

–50

–100 –200

VCE (V)

157

STA312A Absolute maximum ratings

NPN General purpose

External dimensions C

•••

STA (8-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Unit

Conditions

Symbol

Ratings

Unit

Symbol

VCBO

60

V

ICBO

100

µA

VCB=60V

VCEO

60

V

IEBO

100

µA

VEB=6V

VEBO

6

V

VCEO

60

IC

3

A

hFE

300

ICP

6 (PW≤10ms, Du≤50%)

A

VCE(sat)

3 (Ta=25°C)

PT

W

15 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

V

IC=25mA VCE=4V, IC=0.5A

V

IC=1A, IB=10mA

ton

0.8

1.0

µs

VCC 20V,

tstg

3.0

µs

IC=1A,

tf

1.2

µs

IB1=15mA, IB2=–30mA

■Equivalent circuit diagram

3

5

2 1

7

4

6 8

Characteristic curves IC-VCE Characteristics (Typical) 3

hFE-IC Characteristics (Typical)

IB=12mA

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

2000

(VCE=4V)

2000

8mA

1000

Ta=125°C 75°C

1000

typ

5mA

25°C

2 500

hFE

500

hFE

IC (A)

3mA

°C –30

2mA

1 1mA 0.5mA

1

2

3

4

5

100 0.01

6

0.05

VCE(sat), VBE(sat)-IC Characteristics (Typical)

0.5

100 0.01

3

0.05

VBE (sat)

0.5

0.1

1

3

IC-VBE Temperature Characteristics (Typical)

1.5

3

1.0

2

0.5

(VCE=4V)

1 IC= 3A

IC=2A

VCE (sat)

0.05 0.1

0.5

1

0 0.001

5

IC=1A

0.005 0.01

0.05 0.1

0.5

0 0

1

0.5

IB (A)

IC (A)

θ j-a-PW Characteristics

1.0

1.5

VBE (V)

PT-Ta Characteristics

20

Safe Operating Area (SOA) 10

16 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

5

1m

14

s

10

s m 10

12 W ith

10

He ink

50×50×2

1 0.5

25×50×2

6

1

ats

8

4

IC (A)

ite

PT (W)

5

in Inf

θ j–a (°C / W)

0.5

IC (A)

IC (A)

VCE (sat) (V)

1.0

0 0.01

1

VCE(sat)-IB Characteristics (Typical)

(IC / IB=20)

1.5

VCE (sat), VBE (sat) (V)

0.1

IC (A)

VCE (V)

Ta= 125 °C 75°C 25°C –30°C

0 0

Without Heatsink

Single Pulse

0.1 Without Heatsink

2

Ta=25°C

0.5 1

5

10

50

PW (mS)

158

100

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05 3

5

10

50

VCE (V)

100

STA322A Absolute maximum ratings

PNP General purpose

External dimensions C

•••

STA (8-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Unit

Conditions

Symbol

Ratings

Unit

Symbol

VCBO

–50

V

ICBO

–10

µA

VCB=–50V

VCEO

–50

V

IEBO

–10

µA

VEB=–8V

VEBO

–5

V

VCEO

–50

IC

–3

A

hFE

100

ICP

–5 (PW≤1ms, Du≤50%)

A

VCE(sat)

–1.0

V

IB

–1

A

VBE(sat)

–1.5

V

3 (Ta=25°C)

PT

V

IC=–25mA

350

VCE=–4V, IC=–1A IC=–2A, IB=–40mA

W

15 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram

1 2

8 4

6

3

5

7

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

IB=– 80m A

–60

–4

mA

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

1000

–5

(VCE=–4V) 1000

–50mA –40mA

500

500 Ta=125°C 25°C

typ

–3 –20mA

hFE

hFE

IC (A)

–30mA

–30°C

–2 –10mA

0

100

100

50

50

–5mA

–1

0

–1

–2

–3

–4

–5

30 –0.01

–6

–0.05 –0.1

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

–0.5

–1

30 –0.01

–5

–0.05 –0.1

–0.5

–1

–5

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=50)

(VCE=–4V)

–3

–2

–1

–0.05 –0.1

–0.5

–1

IC=–1A

0 –0.002 –0.005 –0.01

–5

–1

IC=–2A

IC=–0.5A

–0.05 –0.1

θ j-a-PW Characteristics

0 0

–1

–0.5

–1.0

–1.5

VBE (V)

PT-Ta Characteristics

Safe Operating Area (SOA) –10

30

16 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

14

ms 10

ith eH

50×50×2

k

6

tsin

8

ea

PT (W)

10

init

1

Inf

5

s 5m

W

12

–5 s 1m

10

θ j–a (°C / W)

–0.5

IB (A)

IC (A)

IC (A)

0 –0.01

Ta = 125 °C 75° C 25° C –30 °C

–0.5

–2

IC (A)

VCE (sat) (V)

Ta=125 °C

–30°C

VCE (sat) (V)

25°C

–1.0

–1 –0.5

25×50×2

0.5

4

Without Heatsink

–0.1

2 0.1 0.1

0.5 1

5 10

50 100

PW (mS)

5001000

5000

0 –40

0

50

Ta (°C)

100

150

–0.05 –0.5

Single Pulse Without Heatsink Ta=25°C

–1

–5

–10

–50

VCE (V)

159

STA371A Absolute maximum ratings

NPN Darlington With built-in avalanche diode

External dimensions C

•••

STA (8-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

2

A

hFE

2000

ICP

4 (PW≤1ms, Du≤25%)

A

VCE(sat)

1.1

1.5

V

IB

0.5

A

VBE(sat)

1.8

2.2

V

VFEC

1.3

1.8

V

IFEC=1A

ton

0.5

µs

VCC 30V,

3 (Ta=25°C)

PT

W

15 (Tc=25°C)

Unit

Conditions

10

µA

VCB=50V

5

mA

VEB=6V

60

70

V

5000

12000

IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA

Tj

150

°C

tstg

4.0

µs

IC=1A,

Tstg

–40 to +150

°C

tf

1.0

µs

IB1=–IB2=2mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

25

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram 3

5

2 1

7

4 R1

6

R2

8 R1: 3.5kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 4

hFE-IC Characteristics (Typical) (VCE=4V)

10000 I B=

10.0

mA

Typ

5.0m

(VCE=4V)

20000 10000

5000

A

2.0m

3

hFE-IC Temperature Characteristics (Typical)

A

5000

°C 25 C =1 75° C ° Ta 25 C 0° –3

A

0.4m

hFE

1000

A 0.6m

2

hFE

IC (A)

A 1.0m

500

1000 500

A

0.3m

1 100

100

50

0

0

1

2

3

4

5

6

30 0.02

50 0.05

0.1

VCE (V)

1

30 0.02

4

0.05

1

(VCE=4V)

25°C

75°C

–30°C

4 Ta=125°C

3

2

IC (A)

VCE (sat) (V)

2

IC-VBE Temperature Characteristics (Typical)

(IC=1A)

3

–30°C

°C Ta=125

75°C 25°C

3

IC (A)

VCE(sat)-IB Temperature Characteristics (Typical)

(IC / IB=1000)

4

1

0.5

0.1

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical)

VCE (sat) (V)

0.5

2

1

0 0.2

0 0.1

4

1

0.5

0.5

1

θ j-a-PW Characteristics

Safe Operating Area (SOA)

10

ea

IC (A)

eH tsin

50×50×2

k

4

1

0.5 1

5 10

50 100

PW (mS)

500 1000

s

s

0.5

25×50×2

Without Heatsink

Single Pulse

0.1 Without Heatsink

2 0 –40

0µ

s

init

6

1m

m

1

Inf

PT (W)

ith

10 8

10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

12

5

3

W

θ j–a (°C / W)

10

2

5

16 14

0.5 0.2

1

VBE (V)

PT-Ta Characteristics

30

160

0 0

3

IB (mA)

IC (A)

–30°C

Ta= 1 75 25°C °C 25 °C

1

Ta=25°C

0

50

Ta (°C)

100

150

0.05

3

5

50

10

VCE (V)

100

STA401A Absolute maximum ratings

NPN Darlington With built-in avalanche diode Electrical characteristics

(Ta=25°C)

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

4

A

hFE

1000

ICP

8 (PW≤10ms, Du≤50%)

A

VCE(sat)

4 (Ta=25°C) W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

(Ta=25°C)

Specification min typ max

Symbol

PT

External dimensions D • • • STA (10-pin)

60

Unit

Conditions

100

µA

VCB=50V

10

mA

VEB=6V

70

V

IC=10mA VCE=4V, IC=3A

V

IC=3A, IB=10mA

ton

1.0

2.0

µs

VCC 30V,

tstg

4.0

µs

IC=3A,

tf

1.5

µs

IB1=–IB2=10mA

■Equivalent circuit diagram 3

5

2 1

7

4 R1

9

6

8

R2

10

R1: 3kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 5

hFE-IC Characteristics (Typical) 20000

IB=

2.0

mA

10000 typ

5000

0.8mA

5000

0.6mA

3

0.5mA

0.4mA

2

Ta

hFE

hFE

IC (A)

(VCE=4V)

20000

10000 1.0mA

4

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

1000

=1

25

°C 25

1000

°C 0°

C

–3

500 500

1

0.3mA

100 0

0

1

2

3

50 0.05

4

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

0.5

0.05

4

0.1

0.5

1

4

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

2

100

0.1

3

(VCE=–4V)

4

1

0 0.1

0.5

1

0 0.2

4

0

0.5

1

IC (A)

5

10

50

0

100

1

θ j-a-PW Characteristics

PT-Ta Characteristics

20

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

5

s

10

Safe Operating Area (SOA) 10 1m

24

2

VBE (V)

IB (mA)

20

–30°C

IC=1A

1

2

75°C

125°C

IC=4 A

IC=3A

IC=2A

25°C

25°C

Ta= 125 °C

Ta=–30°C

1

IC (A)

VCE (sat) (V)

VCE (sat) (V)

3

2

10

100×100×2

12

8.0 1.0

IC (A)

PT (W)

θ j–a (°C / W)

ms

16

5

4.0

1 0.5

50×50×2 25×50×2 Without Heatsink

Single Pulse

0.1 Without Heatsink Ta=25°C

0.5 1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05 3

5

10

50

100

VCE (V)

161

STA402A Absolute maximum ratings

PNP Darlington External dimensions D

General purpose

Unit

Symbol

VCBO

–50

V

ICBO

VCEO

–50

V

IEBO

VEBO

–6

V

VCEO

–50

IC

–4

A

hFE

1000

ICP

–8 (PW≤10ms, Du≤50%)

A

VCE(sat)

4 (Ta=25°C) W

20 (Tc=25°C) 150

°C

Tstg

–40 to +150

°C

(Ta=25°C)

Specification min typ max

Ratings

Tj

STA (10-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

Unit

Conditions

–100

µA

VCB=–50V

–10

mA

VEB=–6V

V

IC=–10mA VCE=–4V, IC=–3A

V

IC=–3A, IB=–10mA

ton

0.4

–2.0

µs

VCC –30V,

tstg

0.8

µs

IC=–3A,

tf

0.6

µs

IB1=–IB2=–10mA

■Equivalent circuit diagram

10

1 R1 R2 2

4

6

3

8

5

7

9

R1: 2kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IB= –2 .3m A

–1.5mA

(VCE=–4V)

10000

–1.8mA

5000

5000

typ

–1.2mA –1.0mA

–3

–0.8mA

1000

1000

hFE

–4

hFE

IC (A)

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

–6

–5

hFE-IC Characteristics (Typical)

500

500

=1 Ta

25

°C 25

°C –3

–2 100

100

50

50

–1

0 0

–1

–2

–3

–4

–5

20 –0.02

–6

–0.05

–0.1

–0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

20 –0.02

–4

C

–0.05 –0.1

–0.5

–1

–4

IC (A)

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=500)

–2

–1

0°

–3

(VCE=–4V)

–4

125°C

–1

–1

0 –0.5

–4

°C

IC=–2A IC=–1A

0 –0.7

–2

–0.1

–1

–5

–10

0 0

–50

–1

IB (mA)

IC (A)

θ j-a-PW Characteristics

10

20

–3

Safe Operating Area (SOA) –10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

–5 m

s

10

1m

24

–2

VBE (V)

PT-Ta Characteristics

20

–30°C

IC=–4A

Ta=125

25°C

75°C 25°C

Ta=–30°C

–1

IC (A)

VCE (sat) (V)

VCE (sat) (V)

–3 –2

12

4.0

–0.5

50×50×2

8.0

10

–1

100×100×2

IC (A)

PT (W)

θ j–a (°C / W)

s

16

5

25×50×2

–0.1

Without Heatsink

Single Pulse

–0.05 Without Heatsink

0.5 1

5

10

50 100

PW (mS)

162

500 1000

0 –40

0

50

Ta (°C)

100

150

–0.03 –3

Ta=25°C

–5

–10

–50

VCE (V)

–100

STA403A

NPN Darlington General purpose

Absolute maximum ratings

External dimensions D

Unit

Symbol

VCBO

120

V

ICBO

VCEO

100

V

IEBO

VEBO

6

V

VCEO

100

IC

4

A

hFE

1000

ICP

8 (PW≤10ms, Du≤50%)

A

VCE(sat)

20 (Tc=25°C) 150

°C

Tstg

–40 to +150

°C

Unit

Conditions

100

µA

VCB=120V

10

mA

VEB=6V

V

IC=10mA VCE=4V, IC=2A

V

IC=2A, IB=10mA

ton

0.6

µs

VCC 40V,

tstg

5.0

µs

IC=2A,

tf

2.0

µs

IB1=–IB2=10mA

4 (Ta=25°C) W

(Ta=25°C)

Specification min typ max

Ratings

Tj

STA (10-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

2.0

■Equivalent circuit diagram

3

2 1

5

4

7

6

8

9

R2

R1

10

R1: 3kΩ typ R2: 500Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

4

20000 IB =

0.8m

A 1m

(VCE=4V) 20000

A

10000

A 0.6m 0.5mA

3

hFE-IC Temperature Characteristics (Typical)

(VCE=4V) 10000

typ

5000

5000

2 0.3mA

hFE

hFE

IC (A)

0.4mA

1000

1000

500

Ta

=1

25

°C °C

25

500

0°

C

–3

1

100

0

1

2

3

4

100

50 0.02

0 5

0.05

0.1

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

50 0.02

4

0.05

0.5

0.1

1

4

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

3

0.5

IC (A)

IC-VBE Temperature Characteristics (Typical) (VCE=4V)

4

3

IC (A)

IC=1A

1

Ta=

125°C

0 0.2

0.5

1

0 0.2

4

0.5

1

θ j-a-PW Characteristics

10

50

0

100

1

PT-Ta Characteristics

20

24

10

20

Safe Operating Area (SOA) 10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

5 s m 10

16 100×100×2 12

8.0 1.0

IC (A)

PT (W)

5

4.0

2

VBE (V)

s 1m

θ j–a (°C / W)

5

IB (mA)

IC (A)

–30°C

°C

1

2

25°C

Ta=–30°C

IC=4A

IC=3A

IC=2A

125

25°C

2

75°C

1

VCE (sat) (V)

VCE (sat) (V)

3

2

1 0.5

50×50×2 25×50×2 0.1

Without Heatsink

Single Pulse

0.05 Without Heatsink 0.5 1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

Ta=25°C

0.03 3

5

10

50

100

VCE (V)

163

STA404A Absolute maximum ratings

NPN Darlington General purpose

External dimensions D

•••

STA (10-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

200

V

ICBO

VCEO

200

V

IEBO

VEBO

6

V

VCEO

200

IC

3

A

hFE

1000

ICP

6 (PW≤10ms, Du≤50%)

A

VCE(sat)

Unit

Conditions

100

µA

VCB=200V

10

mA

VEB=6V

V

IC=10mA VCE=4V, IC=1A

2.0

V

IC=1A, IB=1.5mA

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram

2 1

3

5

4

7

6

8

R1 R2

9 10

R1: 2kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 6

hFE-IC Characteristics (Typical) 5000

100mA

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

(VCE=4V)

5000

IB=200mA

10mA

1000

1000

3mA

500

500

°C 25 =1 Ta °C

4

75

30mA

3

°C

–3

hFE

hFE

IC (A)

25

0° C

5

1mA

2

100

100

50

50

1 0 0

1

2

3

4

5

30 0.03 0.05

6

0.1

0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

30 0.03 0.05

5 6

0.1

0.5

56

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=100)

3

1

IC (A)

3

(VCE=4V)

6

1

–30°C

IC=3A IC=1.5A

1

3

2

0 0.2

0.5

1

1

5

0 0.5

6

1

5

IC (A)

10

50

0 0

100 200

1

θ j-a-PW Characteristics

PT-Ta Characteristics

20

Safe Operating Area (SOA) 10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

5 S

10

S m

12

8.0 1

1

100×100×2

IC (A)

PT (W)

θ j–a (°C / W)

10

S

1m

16

5

4.0

0.5

50×50×2 25×50×2 0.1

Without Heatsink

0.05 0.5 1

5

10

50 100

PW (mS)

164

5001000

0 –40

3

1µ

24

2

VBE (V)

IB (mA)

20

25°C

–30 °C

IC=1A Ta=125°C

75°C

5°C

75°C

Ta =1 2

25°C

4

2

IC (A)

2

VCE (sat) (V)

VCE (sat) (V)

5

0

50

Ta (°C)

100

150

Single Pulse Without Heatsink

Ta=25°C 0.03 5 10

50

VCE (V)

100

200

STA406A

NPN Darlington With built-in avalanche diode

Absolute maximum ratings

External dimensions D

(Ta=25°C)

Specification min typ max

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

6

A

hFE

2000

1

A

VCE(sat)

1.5

V

VBE(sat)

2.0

V

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

STA (10-pin)

Electrical characteristics

(Ta=25°C)

Symbol

IB

•••

ES/B

60

Unit

Conditions

10

µA

VCB=50V

10

mA

VEB=6V

70

V

IC=50mA

15000

VCE=2V, IC=3A

200

IC=3A, IB=10mA

mJ

VCC 20V, L=10mH, IC=6.4A

■Equivalent circuit diagram

3

5

2 1

7

4 R1

9

6

8

R2

10

R1: 3kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=2V) 20000

6 1.5mA

IB=10mA

1mA

10000

5

10000 typ

5000

0.8mA

(VCE=2V)

20000

5000

3

hFE

0.6mA

hFE

IC (A)

4 1000

1000 Ta

500

=1

25

°C 75

500

°C 25

°C

2

0°

C

–3

0.4mA

100

1

100

50 0 0

1

2

3

4

5

50

30 0.03 0.05

6

0.1

0.5

1

30 0.03 0.05

56

0.1

0.5

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

(VCE=2V)

3

3

56

IC (A)

6

25°C

4

IC=6A

3

IC=3A

1

2 IC=1A

125°C

0 0.3

Ta=1 25°C 75°C 25°C

75°C

1

0.5

1

0 0.1

5 6

0

0.5

1

IC (A)

θ j-a-PW Characteristics

5

10

50

0

100

3

PT-Ta Characteristics

Safe Operating Area (SOA) 20

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

10 10 ms

5

1m s

16 100×100×2 12

8.0

1

IC (A)

5

PT (W)

θ j–a (°C / W)

2

VBE (V)

100µs

20

10

1

IB (mA)

24

20

–30°C

1

Ta=–30°C

2

IC (A)

2

VCE (sat) (V)

VCE (sat) (V)

5

4.0

50×50×2

1 0.5

25×50×2 Without Heatsink

Single Pulse

0.1 Without Heatsink Ta=25°C

0.5 1

5

10

50

PW (mS)

100

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05 3

5

10

50

100

VCE (V)

165

STA408A

PNP Darlington External dimensions D • • • STA (10-pin)

General purpose

Absolute maximum ratings

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

–120

V

ICBO

VCEO

–120

V

IEBO

VEBO

–6

V

VCEO

–120

IC

–4

A

hFE

2000

–1

A

VCE(sat)

–1.5

V

VBE(sat)

–2.5

V

IB

4 (Ta=25°C) PT

Unit

Conditions

–10

µA

VCB=–120V

–10

mA

VEB=–6V

V

IC=–10mA VCE=–4V, IC=–2A IC=–2A, IB=–4mA

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 1

10 R1 R2

2

4

6

3

8

5

7

9

R1: 5kΩ typ R2: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

IB=–5mA

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

–4

(VCE=–4V)

10000

–2mA

75°C

–1.5mA

5000

5000 typ 25

–1.0mA

–0.7mA

–2 –0.5mA

Ta

1000

hFE

1000

hFE

IC (A)

–3

500

500

100

100

2 =1

5°

C

°C

°C 30

–

–1 –0.3mA

0 0

–1

–2

–3

–4

–5

50 –0.03 –0.05

–6

–0.1

VCE(sat)-IC Temperature Characteristics (Typical)

–1

50 –0.03

–4

–0.05 –0.1

–0.5

–1

–4

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

–3

–0.5

IC (A)

VCE (V)

IC-VBE Temperature Characteristics (Typical)

–3

(VCE=–4V)

–4

75°C

25°C

IC (A)

IC=–4A

IC=–2A

–2 75°C

IC=–1A

–1

25°C

–1 125°C

0 –0.2

–0.5

–1

0 –0.1

–4

–0.5 –1

–5

–10

0 0

–50 –100

–1

θ j-a-PW Characteristics

PT-Ta Characteristics 24

10

20

Safe Operating Area (SOA) –10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

–5

IC (A)

PT (W)

θ j–a (°C / W)

ms

1

–1

100×100×2 12

8.0

4.0

s 1m

10

16

5

–3

s 0µ 10

20

–2

VBE (V)

IB (mA)

IC (A)

–30°C

Ta=–30°C

–2

Ta=1 25°C

–1

VCE (sat) (V)

VCE (sat) (V)

–3

–2

–0.5

50×50×2 25×50×2 –0.1

Without Heatsink

Single Pulse

–0.05 Without Heatsink 0.5 1

5

10

50 100

PW (mS)

166

500 1000

0 –40

Ta=25°C

0

50

Ta (°C)

100

150

–0.03 –3

–5

–10

–50

VCE (V)

–100

–200

STA412A Absolute maximum ratings

NPN General purpose

External dimensions D

•••

STA (10-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Unit

Conditions

Symbol

Ratings

Unit

Symbol

VCBO

60

V

ICBO

100

µA

VCB=60V

VCEO

60

V

IEBO

100

µA

VEB=6V

VEBO

6

V

VCEO

60

IC

3

A

hFE

300

ICP

6 (PW≤10ms, Du≤50%)

A

VCE(sat)

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

V

IC=25mA VCE=4V, IC=0.5A

V

IC=1A, IB=10mA

ton

0.8

1.0

µs

VCC 20V,

tstg

3.0

µs

IC=1A,

tf

1.2

µs

IB1=15mA, IB2=–30mA

■Equivalent circuit diagram

3

5

2

7

4

9

6

8

1

10

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

IB=12mA

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

2000

3

(VCE=4V)

2000

8mA

1000

Ta=125°C 75°C

1000

typ

5mA

25°C

2

hFE

500

hFE

IC (A)

3mA 2mA

500 –30

°C

1 1mA 0.5mA

1

2

3

4

5

100 0.01

6

0.05

0.1

VCE(sat), VBE(sat)-IC Characteristics (Typical)

1

100 0.01

3

0.05 0.1

VBE (sat)

0.5

3

1.0

2

0.5

(VCE=4V)

1 IC=3A

IC=1A

VCE (sat)

0.05

0.1

0.5

1

0 0.001

5

0.005 0.01

0.05 0.1

0.5

0 0

1

0.5

IB (A)

IC (A)

θ j-a-PW Characteristics

PT-Ta Characteristics 24

10

20

1.5

Safe Operating Area (SOA) 10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

5

s 1m

20

1.0

VBE (V)

s m 10

16 100×100×2 12

4.0

1 0.5

50×50×2

8.0 1

IC (A)

5

PT (W)

θ j–a (°C / W)

3

IC-VBE Temperature Characteristics (Typical)

1.5

IC=2A

0 0.01

1

IC (A)

VCE (sat) (V)

1.0

0.5

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=20)

1.5

VCE (sat), VBE (sat) (V)

0.5

IC (A)

VCE (V)

Ta= 125 °C 75° C 25° C –30 °C

0 0

25×50×2 Without Heatsink

Single Pulse

0.1 Without Heatsink Ta=25°C

0.5 1

5

10

50

100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05 3

5

10

50

100

VCE (V)

167

STA413A Absolute maximum ratings

NPN With built-in avalanche diode Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

35±5

V

ICBO

VCEO

35±5

V

IEBO

VEBO

6

V

VCEO

30

IC

3

A

hFE

500

1

A

VCE(sat)

IB

External dimensions D • • • STA (10-pin)

Unit

Conditions

10

µA

VCB=30V

10

µA

VEB=6V

40

V

IC=25mA VCE=4V, IC=0.5A

0.5

V

IC=1A, IB=5mA

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram

3 2

5

7

4

9

6

8 10

1

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

3.0 A m 10

15 mA

(VCE=4V)

5000

5000 6mA

A

8m

5mA

Ta=125°C

4mA 3mA

1000

hFE

hFE

IC (A)

1000 2mA

1.0

2.0

100 0.01

3.0

0.05

0.1

VCE (V)

0.5

1

100 0.01

3

0.05

0.1

VCE(sat)-IC Characteristics (Typical)

VCE(sat)-IB Characteristics (Typical) 1.2

1.0

1.0

VCE (sat) (V)

3

(VCE=4V)

4.0

3.0

2A

2.0

0.5

Ta

0.5A

0 0.01

0 0

0 0.05

0.1

0.5

1

3

5

1

10

IC (A)

50 100

500 1000

0.5

1.0

θ j-a-PW Characteristics

PT-Ta Characteristics

Safe Operating Area (SOA) 10.0

24 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

10 m s

5.0

0m

0.5 1.0

5.0 10

50100

PW (mS)

5001000

5000

IC (A)

12

4.0

0.1 0.1

s

100×100×2

8.0

0.5

168

10

16

PT (W)

θ j–a (°C / W)

5.0

1.0

0 –40

s

20

1m

10.0

1.5

VBE (V)

IB (mA)

20.0

–55

=1 25 °C 75 ° 25 C °C

1.0

1A

20

°C

100

0.5

1

IC-VBE Temperature Characteristics (Typical)

A IC=3

IC / IB=5 00

1.2

0.5

IC (A)

IC (A)

IC (A)

0 0

55°C 500 –

500

IB=1mA

1.0

VCE (sat) (V)

75°C 25°C

typ

2.0

DC

1.0

50×50×2 25×50×2

=2 5° C)

0.5

Without Heatsink

Single Pulse Without Heatsink Ta=25°C

0.2 0

(T C

50

Ta (°C)

100

150

2

5

10

VCE (V)

50

STA421A Absolute maximum ratings

PNP General purpose

External dimensions D

STA (10-pin)

•••

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Unit

Conditions

Symbol

Ratings

Unit

Symbol

VCBO

–60

V

ICBO

–100

µA

VCB=–60V

VCEO

–60

V

IEBO

–100

µA

VEB=–6V

VEBO

–6

V

VCEO

–60

IC

–3

A

hFE

40

ICP

–6 (PW≤10ms, Du≤50%)

A

VCE(sat)

4 (Ta=25°C) PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

V

IC=–25mA VCE=–4V, IC=–1A

V

IC=–2A, IB=–0.2A

ton

0.25

–1.0

µs

VCC –12V,

tstg

0.75

µs

IC=–2A,

tf

0.25

µs

IB1=–IB2=–0.2A

■Equivalent circuit diagram

1

10

2

4

6

8

5

3

7

9

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

(VCE=–4V)

500

500

–4 A m mA 80 –60 =– IB mA –50

–3

–40m

A

–20mA

hFE

–2

°C Ta=125 75°C

typ

hFE

IC (A)

–30mA

100

25°C

100

–30°C

50

50

–10mA

–1 –5mA

0 0

–1

–2

–3

–4

–5

20 –0.01

–6

–0.05 –0.1

VCE(sat), VBE(sat)-IC Characteristics (Typical)

–1

20 –0.01

–4

–0.05 –0.1

–0.5

–1

–4

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=10)

–1.0

IC-VBE Temperature Characteristics (Typical) (VCE=–4V)

–4

–1.5

–3

–0.5 VBE (sat)

IC (A)

–1.0

VCE (sat)

IC=–3A

–2

–2A

–0.5 –1A

125 ° 75 ° C C 25° C –30 °C

–1

T a=

VCE (sat), VBE (sat) (V)

–0.5

IC (A)

VCE (V)

VCE (sat)

–0.1

–0.5

–1

0 –0.01

–3

–0.05

IC (A)

–0.5

0 0

–1

–0.5

PT-Ta Characteristics

20

24

10

20

–1.0

–1.5

VBE (V)

IB (A)

θ j-a-PW Characteristics

Safe Operating Area (SOA) –10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

–5

1m

10 m s

s

16

5

PT (W)

θ j–a (°C / W)

–0.1

100×100×2 12

4.0

–1 –0.5

50×50×2

8.0 1.0

IC (A)

0 –0.05

25×50×2 Without Heatsink

Single Pulse

–0.1 Without Heatsink Ta=25°C

0.5 1

5

10

50

100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

–0.05 –3

–5

–10

–50

–100

VCE (V)

169

STA431A

PNP + NPN H-bridge

External dimensions D • • • STA (10-pin)

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

3

–3

A

ICP

6 (PW≤10ms, Du≤50%)

–6 (PW≤10ms, Du≤50%)

A

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 10

6

8 7 3

9 5

2

4

1

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN 4 IB=

m 70

PNP

(VCE=4V)

A

0m

50mA

IB

8 =–

40mA

3

NPN 4

–4

60mA

A

A 0m mA –50 A –40m

–6

–3

3

30mA

20mA

2

–2

IC (A)

IC (A)

IC (A)

–30mA

–20mA

2

10mA –10mA

1

1 125 °C 75 ° C 25° C –3 0 °C

–1 5mA

Ta=

–5mA

0 0

1

2

3

4

5

0 0

6

–1

–2

–3

VCE (V)

–4

–5

0 0

–6

0.5

VCE (V)

1.0

1.5

VBE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

PNP

(VCE=–4V)

500

500

(VCE=–4V)

–4

–3 typ

50

IC (A)

hFE

hFE

typ

100

100

50

–2

Ta= 12 5° 75 C °C 25 °C –3 0°C

–1

20 0.01

0.05

0.1

0.5

1

20 –0.01

4

–0.05

–0.1

IC (A)

–0.5

–1

–4

hFE-IC Temperature Characteristics (Typical) NPN

PNP

(VCE=4V)

500

°C Ta=125 75°C

hFE

hFE

25°C

100

(VCE=–4V)

500

Ta=125°C 75°C

–30°C

100

25°C

–30°C

50

50

20 0.01

0.05

0.1

0.5

IC (A)

170

1

4

20 –0.01

–0.05 0.1

–0.5

IC (A)

0 0

–0.5

–1.0

VBE (V)

IC (A)

–1

–4

–1.5

STA431A Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

40

Specification

Unit

Conditions

100

µA

VCB=60V

100

µA

VEB=6V

V

IC=25mA

–60

VCE=4V, IC=1A

40

max

ICBO

PNP

VCE(sat)

1.0

min

V

IC=2A, IB=0.2A

typ

Unit

Conditions

–100

µA

VCB=–60V

–100

µA

VEB=–6V

V

IC=–25mA

max

VCE=–4V, IC=–1A –1.0

V

IC=–2A, IB=–0.2A

ton

0.2

µs

VCC 12V,

0.25

µs

VCC –12V,

tstg

1.0

µs

IC=2A,

0.75

µs

IC=–2A,

tf

0.3

µs

IB1=–IB2=0.2A

0.25

µs

IB1=–IB2=–0.2A

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

1.5

–1.5

20

10

IC=3A

–1.0

2A

2A

0.5

IC=3A

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

1.0

–0.5

5

1A

1.0

1A

0 0.005 0.01

0.05

0.1

0.5

0 –0.005 –0.01

1

–0.05 –0.1

IB (A)

–0.5

0.5 1

–1

(IC / IB=10)

–1.0

24 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

16

PT (W)

VCE (sat) • VBE (sat) (V)

VBE (sat)

500 1000

PT-Ta Characteristics

20

0.5

50 100

PNP

(IC / IB=10)

1.0

VCE (sat) • VBE (sat) (V)

10

PW (mS)

VCE(sat), VBE(sat)-IC Characteristics (Typical) NPN

–0.5 VBE (sat)

100×100×2 12

8.0

4.0 VCE (sat)

0 0.05

5

IB (A)

50×50×2 25×50×2 Without Heatsink

VCE (sat)

0.1

0.5

1

0 –0.05

3

–0.1

–0.5

IC (A)

–1

–3

IC (A)

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10 1m

–5

s

5

10

10

m

1m

m

1

IC (A)

IC (A)

s

0.5

–1 –0.5

Single Pulse

Single Pulse

–0.1 Without Heatsink

0.1 Without Heatsink Ta=25°C

0.05 3

5

s

s

Ta=25°C

10

50

VCE (V)

100

–0.05 –3

–5

–10

–50

–100

VCE (V)

171

STA434A

PNP + NPN Darlington H-bridge

External dimensions D

Absolute maximum ratings

•••

STA (10-pin)

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

80

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

4

–4

A

ICP

8 (PW≤10ms, Du≤50%)

–8 (PW≤10ms, Du≤50%)

A

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 10 R1

R2

6

8 7 3

9 5 4

2 R3

R4

1

R1: 2kΩ typ R2: 150Ω typ R3: 3kΩ typ R4: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

NPN

–6

2

0.4mA

mA –1.0

–3

mA –0.8

2

–2

25°C

0.5mA

–30°C

IC (A)

IC (A)

0.6mA

25°C

–4

0.8mA

3

mA –1.2

A

Ta=1

4

–5

(VCE=4V)

mA –1.8 mA –1.5

IC (A)

1.2m

IB= –2 .3m A

mA 4.0 IB= mA 2.0

4

75°C

6

1 –1

0 0

2

4

0 0

6

–1

–2

VCE (V)

–3

–4

–5

0 0

–6

1

VCE (V)

2

VBE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

20000 10000

PNP

(VCE=–4V)

10000

(VCE=–4V)

–4

typ

5000 typ

5000

–3

500

500

100

100

–2

–1

Ta=125 °C 75°C 25°C –30°C

IC (A)

1000

hFE

hFE

1000

50

50 30 0.03

0.05 0.1

0.5

1

20 –0.02 –0.05

4

–0.1

–0.5

–1

–4

IC (A)

IC (A)

PNP (VCE=4V constant)

20000

(VCE=4V constant)

10000

10000

5000

5000 °C 25

1000

=1

°C 25 0°C –3

500

°C 25 C 0°

–3

500

50

50

0.1

0.5

IC (A)

172

°C

25

100

100

30 0.05

=1 Ta

1000

hFE

hFE

Ta

1

4

20 –0.02

–0.05

–0.1

–0.5

IC (A)

–1

–2

VBE (V)

hFE-IC Temperature Characteristics (Typical) NPN

0 0

–1

–4

–3

STA434A Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

Conditions

100

µA

VCB=80V

10

mA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=3A

1000

V

IC=3A, IB=10mA

IEBO VCEO

60

hFE

1000

Specification

Unit

max

ICBO

PNP

VCE(sat)

2.0

min

typ

Unit

Conditions

–100

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA

V

IC=–2A, IB=–10mA

max

VCE=–4V, IC=–3A –2.0

ton

1.0

µs

VCC 30V,

0.4

µs

VCC –30V,

tstg

4.0

µs

IC=3A,

0.8

µs

IC=–3A,

tf

1.5

µs

IB1=–IB2=10mA

0.6

µs

IB1=–IB2=–10mA

Characteristic curves θj-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

20

–3

3A 2A 1A

1

–2

θ j–a (°C / W)

IC=4A

2

VCE (sat) (V)

VCE (sat) (V)

10

IC=–4A

–1

5

IC=–2A IC=–1A

1.0

0 0.2

0.5

1

5

10

50

0 –0.5

100

–0.1

–5

–10

0.5 1

–50

5

2.0

(IC / IB=1000)

–2

24

Ta=–30°C 75°C

°C Ta=–30

–1

25°C 125°C

100×100×2

12

8.0

25×50×2

125°C

4.0

0 0.1

0.5

0 –0.5

4

1

IC (A)

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

16

PT (W)

VCE (sat) (V)

VCE (sat) (V)

20

25°C

500 1000

PT-Ta Characteristics PNP

(IC / IB=1000)

50 100

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

1.0

10

IB (mA)

IB (mA)

–1

–4

IC (A)

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

–10

–10

–5

–5 10 ms

IC (A)

IC (A)

s 1m

s 1m

ms 10

–1

–1 –0.5

–0.5

Single Pulse Without Heatsink Ta=25°C

–0.1 –3

–5

Single Pulse Without Heatsink

–10

–50

VCE (V)

–100

–0.1 Ta=25°C –0.07 –3 –5

–10

–50

–100

VCE (V)

173

STA435A Absolute maximum ratings

NPN Darlington With built-in avalanche diode

Unit

Symbol

VCBO

65±15

V

ICBO

VCEO

65±15

V

IEBO

VEBO

6

V

VCEO

50

IC

4

A

hFE

1000

ICP

8 (PW≤10ms, Du≤50%)

A

VCE(sat)

4 (Ta=25°C) W

20 (Tc=25°C) 150

°C

Tstg

–40 to +150

°C

STA (10-pin)

(Ta=25°C)

Specification min typ max

Ratings

Tj

•••

Electrical characteristics

(Ta=25°C)

Symbol

PT

External dimensions D

65

Unit

Conditions

100

µA

VCB=50V

10

mA

VEB=6V

80

V

IC=10mA VCE=4V, IC=3A

V

IC=3A, IB=10mA

ton

1.0

2.0

µs

VCC 30V,

tstg

4.0

µs

IC=3A,

tf

1.5

µs

IB1=–IB2=10mA

■Equivalent circuit diagram 3

5

2 1

7

4

9

6

8

R1 R2

10

R1: 3kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical) 20000

5

(VCE=4V) 20000

10000

mA 2.0 IB =

4

hFE-IC Temperature Characteristics (Typical)

(VCE=4V) 10000 typ

5000

A

1.0m

5000

A

25

0.4mA

2

Ta

hFE

0.6mA 0.5mA

hFE

IC (A)

0.8m

3

1000

°C

=1

1000

°C 25 C 0° –3

500 500

1

0.3mA

100 0

0

1

2

3

50 0.05

4

0.1

100 0.05

4

0.1

0.5

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical)

1

4

IC (A)

VCE(sat)-IB Characteristics (Typical)

(IC / IB=1000)

2

1

0.5

VCE (V)

IC-VBE Temperature Characteristics (Typical)

3

(VCE=–4V)

4

2

Ta =

0 0.1

0.5

0

0 0.2

4

1

0.5

1

5

10

50

100

0

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

Safe Operating Area (SOA)

1m

s

s 0µ 10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

10 ms

10

16 5

1 100×100×2

12

4.0

0.5

50×50×2

8.0 1.0

IC (A)

PT (W)

θ j–a (°C / W)

2

5

24

20

1

VBE (V)

IC (A)

30

–30°C

1

1A

25°C

1

°C

125˚C

IC=4A

3A 2A

125

25˚C

75°C

Ta=–30°C

1

IC (A)

VCE (sat) (V)

VCE (sat) (V)

3

2

25×50×2

Single Pulse

Without Heatsink

0.1 Without Heatsink Ta=25°C

0.5 1

5

10

50 100

PW (ms)

174

500 1000

0 –40

0

40 50

80

Ta (°C)

100 120

150

0.05

3

5

50

10

VCE (V)

100

STA457C

PNP + NPN Darlington H-bridge

External dimensions D • • • STA (10-pin)

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

60

–60

V

VCEO

60

–60

V

VEBO

6

–6

V

IC

4

–4

A

ICP

8 (PW≤10ms, Du≤50%)

–8 (PW≤10ms, Du≤50%)

A

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

■Equivalent circuit diagram 2

7

R3 R4

1

6 3 8 9

4 R1 R2

10

5

R1: 3kΩ typ R2: 200Ω typ R3: 2kΩ typ R4: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

NPN (VCE=4V)

mA

–5

mA

–1.5

A

1.2m

–4

0.4mA

–3

mA

–0.8

2

Ta=1

–2 1

25°C

0.5mA

25°C

0.6mA

mA

–1.0

IC (A)

IC (A)

IC (A)

0.8mA

2

3

A

4

m –1.2

–1

0 0

2

4

0 0

6

–1

–2

–3

VCE (V)

–4

–5

0 0

–6

1

VCE (V)

–30°C

mA

2.0

4

–1.8

.3

A

–2

0m

IB =

IB

. =4

m A

–6

75°C

6

2

VBE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

20000

5000

10000

PNP

(VCE=–4V)

10000

(VCE=–4V)

–4

typ

typ

5000

–3

100 100

–2 75°C 25°C –30°C

500

500

Ta=125 °C

hFE

hFE

1000

IC (A)

1000

–1

50

50 30 0.03 0.05

0.1

0.5

1

20 –0.02

4

–0.05

–0.1

–0.5

IC (A)

–1

–4

hFE-IC Temperature Characteristics (Typical) NPN

(VCE=4V)

20000

PNP

(VCE=4V)

10000 5000

10000

1000

1000

°C 25 =1

°C 25

hFE

hFE

5000

Ta

C 0°

500

25

=1 Ta

–3

500

°C °C 25 C 0° –3

100 50

100 0.05

0.1

0.5

IC (A)

176

1

4

20 –0.02

–0.05 –0.1

–0.5

IC (A)

0 0

–1

–2

VBE (V)

IC (A)

–1

–4

–3

STA457C Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

IEBO VCEO

60

hFE

2000

Specification

Unit

Conditions

10

µA

VCB=60V

10

mA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=2A

2000

max

ICBO

PNP

VCE(sat)

1.5

V

VBE(sat)

2.0

V

VFEC

1.6

V

min

typ

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA

max

VCE=–4V, IC=–2A

IC=2A, IB=4mA IFEC=2A

–1.5

V

–2.0

V

–1.6

V

IC=–2A, IB=–4mA IFEC=–2A

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

3

–3

2

–2

20

IC=4A

3A

2A

1

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat) (V)

10

IC=–4A

–1

1A

5

IC=–2A IC=–1A

1.0

0 0.2

0.5

1

5

10

50

0 –0.5

100

–0.1

–5

–10

0.5 1

–50

5

(IC / IB=1000)

–2

24

75°C

Ta=–30°C 25°C

–1

100×100×2 12

125°C

50×50×2

8.0

25×50×2

125°C 4.0

0 0.1

0.5

0 –0.5

4

1

IC (A)

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

16

PT (W)

VCE (sat) (V)

VCE (sat) (V)

Ta=–30°C

500 1000

PT-Ta Characteristics

20

25°C

100

PNP

(IC / IB=1000)

2.0

50

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

1.0

10

IB (mA)

IB (mA)

–1

–4

IC (A)

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

–5

–5

s

10

1m

–10

s 1m

–10

ms

10

IC (A)

IC (A)

ms

–1 –0.5

–1

–0.5

Single Pulse Without Heatsink Ta=25°C

Single Pulse Without Heatsink Ta=25°C

–0.1 –3

–5

–10

–50

VCE (V)

–100

–0.1 –3

–5

–10

–50

–100

VCE (V)

177

STA458C

PNP+NPN H-bridge

External dimensions D • • • STA (10-pin)

Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

50

–50

V

VCEO

30

–30

V

VEBO

6

–6

V

IC

5

–5

A

ICP

10(PW≤10ms, Du≤50%)

–10(PW≤10ms, Du≤50%)

A

IB

1

–1

A

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +50

°C

TFSM

20 (Single half-cycle sinewave)

A

■Equivalent circuit diagram 2

7

R

6

1 8

3

9

4

5

R: 600Ω Typ

10

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

8.0 A

IB= –1 50 mA

mA 90 mA 70

IC (A)

–70mA

30mA

4.0

(VCE=1V)

mA –90

–6.0

A 50m

IC (A)

=1 IB

m 50

6.0

IC (A)

NPN 10.0

–8.0

–50mA

–4.0

5.0

–30mA

–2.0

10mA

15 0°C 7 5° 2 5° C C –40 °C

2.0

Ta=

–10mA

0 0

1.0

2.0

0 0

3.0

–1.0

VCE (V)

–2.0

0 0

–3.0

0.5

1.0

1.5

VBE (V)

VCE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=1V)

500

PNP

(VCE=–1V)

500

(VCE=–1V)

–10.0

50

20 0.02

100

0.5

0.1

0.5

1

5

Ta= 150 °C

50

20 –0.02 –0.05 –0.1

10

–0.5

–1

–5

–10

IC (A)

IC (A)

PNP

(VCE=1V)

500

° –40

100

°C 50

Ta

hFE

hFE

°C 50 =1 Ta C 75° C 25° C

50

100

50

0.1

0.5

1

IC (A)

178

(VCE=–1V)

500

5

10

20 –0.05 –0.1

=1

°C 75 °C 25 C 0°

–4

–0.5

–1

IC (A)

0 0

–0.5

–1.0

VBE (V)

hFE-IC Temperature Characteristics (Typical) NPN

20 0.05

–5.0

75° C 25° C –40 °C

100

IC (A)

typ

hFE

hFE

typ

–5

–10

–1.5

STA458C Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification

Conditions

10

µA

VCB=50V

20

mA

VEB=6V

V

IC=25mA

–30

70

VCE=1V, IC=1A

70

VCE=–1V, IC=–1A

40

VCE=1V, IC=4A

40

VCE=–1V, IC=–4A

typ

max

ICBO IEBO 30

hFE

Specification

Unit

min

VCEO

PNP

VCE(sat)

0.5

min

typ

Unit

Conditions

–10

µA

VCB=–50V

–20

mA

VEB=–6V

V

IC=–25mA

max

V

IC=3A, IB=0.1A

V

IC=–3A, IB=–0.1A

ton

0.3

µs

VCC 12V,

0.3

–0.5

µs

VCC –12V,

tstg

0.5

µs

IC=3A,

0.5

µs

IC=–3A,

tf

0.1

µs

IB1=–IB2=100mA

0.1

µs

IB1=–IB2=–100mA

trr

2.0

µs

IF=IR=100mA

2.0

µs

IF=IR=100mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) NPN

PNP

2

20

–2

IC=5A

1

θ j–a (°C / W)

VCE (sat) (V)

VCE (sat)

10

–1

5

3A 2A

IC=–5A

1A

–1A

0 0.005 0.001

0.05

0.1

0.5

0 –0.005 –0.01

1

–2A

–0.05

IB (A)

1.0

–3A

–0.1

–0.5

0.5 1

–1

5

1.5

–1.5

24

75°C

–1.0

100×100×2 12

Ta=150°C

–0.5

25°C

50×50×2

8.0

75°C

25×50×2

25°C

–40°C

0 0.02 0.05 0.1

0.5

1

4.0

5

10

0 –0.02 –0.05 –0.1

20

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

16

PT (W)

VCE (sat) (V)

VCE (sat) (V)

Ta=150°C

500 1000

(IC / IB=20)

20

1.0

100

PT-Ta Characteristics PNP

(IC / IB=20)

50

PW (mS)

VCE(sat)-IC Temperature Characteristics (Typical) NPN

0.5

10

IB (A)

–40°C

–0.5 –1

–5

–10 –20

IC (A)

IC (A)

Without Heatsink

0 –40

0

50

100

150

Ta (°C)

Safe Operating Area (SOA) NPN

PNP

10

–10 ec 1mS

Sec 10m

5

–5

IC (A)

IC (A)

c Se 1m

c Se 10m

–1

1

0.5

0.2 2

–0.5 Single Pulse Without Heatsink Ta=25°C

5

10

VCE (V)

30

50

–0.2 –2

Single Pulse Without Heatsink Ta=25°C

–5

–10

–30

–50

VCE (V)

179

STA460C Absolute maximum ratings

NPN Darlington With built-in avalanche diode

External dimensions D • • • STA (10-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

±6

A

hFE

700

ICP

±10 (PW≤1ms, Du≤50%)

A

VCE(sat)

0.09

0.15

V

IC=1.5A, IB=15mA

VFEC

1.25

1.5

V

IFEC=6A

mJ

L=10mH, Single pulse

3.2 (Ta=25°C) PT

W

18 (Tc=25°C)

Tj

150

°C

Tstg

–40 to +150

°C

ES/B

Ratings

Unit

10

µA

VCB=50V

10

µA

VEB=6V

60

70

V

1500

3000

IC=50mA VCE=1V, IC=1A

200

■Equivalent circuit diagram 3

8

2

7

4

9

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

10

hFE-IC Temperature Characteristics (Typical)

(VCE=1V)

5000

(VCE=1V)

5000

9 IB= 30 m A

Ta=125°C

8

typ

mA

20

75°C

25°C

1000

1000

mA

–55°C

10

5

500

500

hFE

6

hFE

IC (A)

7

5mA

4 3mA

3

0

100

100

2

1mA

1

50

50 0

1

2

3

4

30 0.01

5

0.05 0.1

VCE (V)

0.5

1

5

30 0.01

10

0.05 0.1

0.5

VCE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Characteristics (Typical)

1

5

10

IC (A)

IC (A)

IC-VBE Temperature Characteristics (Typical) (VCE=1V)

(IC / IB=100) 0.75

0.75

6

5

2 IC=3A

1

0 0.01

0 0.05 0.1

0.5

1

5

1

10

5

75°C

1.5A

0.5A

10

50

100

0

500

0

0.5

θ j-a-PW Characteristics

PT-Ta Characteristics

20

20 0.5

With Silicone Grease Natural Cooling

10 ms

5

ms

10

W

15

s 1m

5

1.5

Safe Operating Area (SOA)

20

10

1.0

VBE (V)

IB (mA)

IC (A)

–55°C

0.25

3

Ta=1 25°C

0.25

4

IC (A)

VCE (sat) (V)

VCE (sat) (V)

0.5

25°C

Ta=–55˚C 25˚C 75˚C 125˚C

0.5

eH

IC (A)

init ea

10

tsin k

PT (W)

In f

θ j–a (°C / W)

ith

1 0.5

1 0.5

5 Without Heatsink

Single Pulse

0.1

0.1 Without Heatsink Ta=25°C

0.05 0.1

0.5 1

5 10

50 100

PW (mS)

180

500 1000 2000

0 –55

0

50

Ta (°C)

100

150

0.05 0.5

1

5

10

VCE (V)

50 100

STA471A

NPN Darlington With built-in avalanche diode

Absolute maximum ratings

External dimensions D

•••

STA (10-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

2

A

hFE

2000

ICP

4 (PW≤1ms, Du≤25%)

A

VCE(sat)

1.1

1.5

V

IB

0.5

A

VBE(sat)

1.8

2.2

V

VFEC

1.3

1.8

V

IFEC=1A

ton

0.5

µs

VCC 30V,

4 (Ta=25°C)

PT

W

20 (Tc=25°C)

Unit

Conditions

10

µA

VCB=50V

5

mA

VEB=6V

60

70

V

5000

10000

IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA

Tj

150

°C

tstg

4.0

µs

IC=1A,

Tstg

–40 to +150

°C

tf

1.0

µs

IB1=–IB2=2mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

25

pF

VCB=10V, f=1MHz

3

5

2 1

7

4 R1

9

6

8

R2

10

R1: 3.5kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 4

hFE-IC Characteristics (Typical) (VCE=4V)

10000 mA

10.0

hFE-IC Temperature Characteristics (Typical) (VCE=4V)

10000

Typ

IB=

5000

A 5.0m A 2.0m

3

5000

Ta

1000

A

hFE

0.6m

2

A

0.4m

1000

hFE

IC (A)

A 1.0m

500

°C 25 °C 75 °C 25 C 0° –3

=1

500

A

0.3m

1 100

100

50

0

0

1

2

3

4

5

50

30 0.02

6

0.05

0.1

0.5

IC-VBE Temperature Characteristics (Typical)

(IC=1A)

3

25°C

–30°C

75°C

3

2

IC (A)

VCE (sat) (V)

(VCE=4V)

4 Ta=125°C

5°C

1

4

1

0.5

0.1

VCE(sat)-IB Temperature Characteristics (Typical)

75°C 25°C –30°C

Ta=12

VCE (sat) (V)

2

0.05

IC (A)

(IC / IB=1000)

3

30 0.02

4

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

2

1

0 0.2

0 0.1

3

1

0.5

0.5

1

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

30

0 0

3

IC (A)

1

Safe Operating Area (SOA)

1m

IC (A)

PT (W)

θ j–a (°C / W)

1

100×100×2 12

4.0

ms 10

16

s

100µs

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

10

1

3

5

20

8.0

2

VBE (V)

24

5

–30°C

T a= 1 75 25 °C °C 25 °C

1

0.5

50×50×2 25×50×2 Single Pulse

Without Heatsink

0.1 Without Heatsink Ta=25°C

0.5 0.2

0.5 1

5

10

50 100

PW (mS)

500 1000

0 –40

0

50

Ta (°C)

100

150

0.05

3

5

50

10

100

VCE (V)

181

STA472A

PNP Darlington General purpose

Absolute maximum ratings

External dimensions D • • • STA (10-pin)

Electrical characteristics

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VCBO

–60

V

ICBO

VCEO

–60

V

IEBO

VEBO

–6

V

VCEO

–60

IC

–2

A

hFE

2000

ICP

–4 (PW≤1ms, Du≤25%)

A

IB

–0.5

A

4 (Ta=25°C)

PT

Unit

Conditions

–10

µA

VCB=–60V

–5

mA

VEB=–6V

V

IC=–10mA

4000

10000

VCE(sat)

–1.2

–1.5

V

VBE(sat)

–1.9

–2.2

V

VFEC

–1.3

–1.8

V

IFEC=–1A

ton

0.4

µs

VCC –30V,

W

20 (Tc=25°C)

(Ta=25°C)

Specification min typ max

VCE=–4V, IC=–1A IC=–1A, IB=–2mA

Tj

150

°C

tstg

1.0

µs

IC=–1A,

Tstg

–40 to +150

°C

tf

0.4

µs

IB1=–IB2=–2mA

fT

100

MHz

VCE=12V, IE=–0.1A

Cob

30

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

10

1 R1 R2 2

4

6

3

8

5

7

9

R1: 4kΩ typ R2: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical) –4

(VCE=–4V)

hFE-IC Temperature Characteristics (Typical) (VCE=–4V)

10000

–5.0mA

75°C

IB= –1 0.0 mA

5000

5000

–2.0mA

–1.2mA –1.0mA –0.8mA

°C 25

1000

hFE

–2

25°C

typ

–0.6mA –0.5mA

hFE

–3

IC (A)

hFE-IC Characteristics (Typical) 10000

=1 Ta

1000

500

500

100

100

C 0° –3

–0.4mA

–1 –0.3mA

0 0

–1

–2

–4

–3

–5

50 –0.02

–6

–0.05 –0.1

–0.5

–1

50 –0.02

–4

IC (A)

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical) –3

–0.5

–1

–4

IC (A)

VCE(sat)-IB Temperature Characteristics (Typical)

(IC / IB=1000)

–0.05 –0.1

IC-VBE Temperature Characteristics (Typical)

(IC=–1A)

–3

(VCE=–4V)

–4

Ta=125°C

75°C

25°C

–3

–1

–1

125°C

0 –0.2

–2

–0.5

0 –0.1

–4

–1

–0.5

–1

Ta =1 75 25°C °C 25 °C –3 0°C

–1

°C

25°C –30°C

–2

IC (A)

Ta=–30

VCE (sat) (V)

VCE (sat) (V)

75°C

–2

0 0

–5

–1

IB (mA)

IC (A)

θ j-a-PW Characteristics

PT-Ta Characteristics

20

24

10

20

–2

Safe Operating Area (SOA) –5

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

10 0µ s

IC (A)

PT (W)

θ j–a (°C / W)

1

4.0

s

12

8.0

m

100×100×2

s

10

1m

–1

16

5

–3

VBE (V)

–0.5

50×50×2 25×50×2

–0.1

Without Heatsink Single Pulse

–0.05 Without Heatsink 0.5 0.2

0.5 1

5 10

50 100

PW (mS)

182

500 1000

0 –40

0

50

Ta (°C)

100

150

–0.03 Ta=25°C –3 –5

–10

–50

VCE (V)

–100

STA473A

NPN Darlington General purpose

Absolute maximum ratings

External dimensions D

Unit

Symbol

VCBO

120

V

ICBO

VCEO

100

V

IEBO

VEBO

6

V

VCEO

100

IC

2

A

hFE

2000

ICP

4 (PW≤1ms, Du≤25%)

A

IB

0.5

A

4 (Ta=25°C)

(Ta=25°C)

Specification min typ max

Ratings

Unit

Conditions

10

µA

VCB=120V

5

mA

VEB=6V

V

IC=10mA

5000

12000

VCE(sat)

1.1

1.5

V

VBE(sat)

1.8

2.2

V

VFEC

1.3

1.8

V

IFEC=1A

ton

0.5

µs

VCC 30V,

W

20 (Tc=25°C)

STA (10-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

VCE=4V, IC=1A IC=1A, IB=2mA

Tj

150

°C

tstg

4.5

µs

IC=1A,

Tstg

–40 to +150

°C

tf

1.2

µs

IB1=–IB2=2mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

20

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

3

2 1

R1

5

4

7

6

8

R2

9 10

R1: 4kΩ Typ R2: 150Ω Typ

Characteristic curves IC-VCE Characteristics (Typical) 4

10000 typ

5000

75°C 25°C

5000

hFE

0.3mA

hFE

A 1.2m

A 0.6m 0.4mA

2

(VCE=4V)

20000

10000

A 0.0m IB-1 A 4.0m

A 2.0m

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

20000

3

IC (A)

hFE-IC Characteristics (Typical)

1000

1000

500

500

100

100

=1 Ta

1

–3

1

2

3

4

5

30 0.02

6

0.05

0.1

VCE (V)

C

0.5

1

30 0.02

4

0.05

0.1

0.5

VCE(sat)-IB Temperature Characteristics (Typical)

(IC / IB=1000)

(VCE=4V)

4

Ta=125°C –30°C

5°C 75°C 25°C

Ta=12

4

IC-VBE Temperature Characteristics (Typical)

(IC=1A)

3

3

1

IC (A)

IC (A)

VCE(sat)-IC Temperature Characteristics (Typical)

75°C

1

3 25°C

2

–30°C

IC (A)

2

VCE (sat) (V)

VCE (sat) (V)

0°

50

50

0 0

°C 25

2

1

0 0.2

0.5

0 0.1

4

1

0.5

0 0

5

θ j-a-PW Characteristics

PT-Ta Characteristics

Safe Operating Area (SOA)

IC (A)

PT (W)

0.5

50×50×2 25×50×2

0.1

Without Heatsink

0.05

1

5

10

50 100

PW (mS)

500 1000

1m s

s

12

4.0

s

1

100×100×2

8.0 1

m

0µ

10

10

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

16 5

3

5

20

10

0.5

2

VBE (V)

24

20

0.5 0.2

1

IB (mA)

IC (A)

θ j–a (°C / W)

1

Ta= 12 5°C 7 25 5°C ° –3 C 0°C

1

0 –40

0

50

Ta (°C)

100

150

Single Pulse Without Heatsink

0.03 Ta=25°C 3 5

10

50

100

200

VCE (V)

183

STA475A

NPN Darlington With built-in avalanche diode

Absolute maximum ratings

External dimensions D

(Ta=25°C)

Specification min typ max

Ratings

Unit

Symbol

VCBO

100±15

V

ICBO

VCEO

100±15

V

IEBO

VEBO

6

V

VCEO

85

IC

2

A

hFE

2000

ICP

4 (PW≤1ms, Du≤25%)

A

VCE(sat)

1.5

V

IB

0.5

A

VBE(sat)

2.2

V

4 (Ta=25°C)

Unit

Conditions

10

µA

VCB=85V

5

mA

VEB=6V

100

115

V

5000

12000

VFEC

W

20 (Tc=25°C)

STA (10-pin)

Electrical characteristics

(Ta=25°C)

Symbol

PT

•••

IC=10mA VCE=4V, IC=1A

1.8

IC=1A, IB=2mA

V

IFEC=1A

ton

0.6

µs

VCC 30V,

Tj

150

°C

tstg

3.0

µs

IC=1A,

Tstg

–40 to +150

°C

tf

1.0

µs

IB1=–IB2=2mA

■Equivalent circuit diagram

3 2 1

5

7

4 R1

9

6

8

R2

10

R1: 4kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical) IB= 10m A

4

hFE-IC Characteristics (Typical)

A 5m

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

20000

(VCE=4V)

20000

2mA

10000

10000 Typ

1mA

5000

5000

3

0.3mA

1

0.2mA

0

0

1

3

2

4

25

5

Ta

hFE

2

hFE

IC (A)

0.5mA

1000 500

500

100

100

50 0.03 0.05

6

VCE (V)

0.1

0.5

1

=1

1000

50 0.03 0.05

4

°C

°C 75 °C 25 C 0° –3

0.1

0.5

VCE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Characteristics (Typical) 3

2

2

4

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000) 3

1

IC (A)

IC (A)

(VCE=4V)

4

25°C

1

75°C

Ta=–30°C

IC (A)

VCE (sat) (V)

VCE

(sat)

(V)

3 IC=4A

IC=2A

1

2

IC=1A Ta= 125 °C 75 ° C 25°C –30°C

1 125˚C

0 0.3

0.5

1

0 0.1

4

0.5

1

IC (A)

5

θ j-a-PW Characteristics

0 0

50 100

1

PT-Ta Characteristics 5

10

10 0µ s

µs

10 m

s

s

1

100×100×2

IC (A)

PT (W)

50

1m

16

12

0.5

50×50×2

8.0

4.0

3

Safe Operating Area (SOA)

With Silicone Grease Natural Cooling Heatsink: Aluminum in mm

With Infinite Heatsink

20

5

2

VBE (V)

24

20

θ j–a (°C / W)

10

IB (mA)

25×50×2 0.1

Without Heatsink

Single Pulse

0.05 Without Heatsink Ta=25°C

1 1

5

10

50 100

PW (mS)

184

500 1000

0 –40

0

50

Ta (°C)

100

150

0.03 3

5

50

10

VCE (V)

100

200

STA481A

NPN Darlington With built-in avalanche diode

Absolute maximum ratings

External dimensions D

•••

STA (10-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

VEBO

6

V

VCEO

50

IC

1

A

hFE

2000

ICP

2.5 (PW≤1ms, Du≤25%)

A

VCE(sat)

1.0

1.5

V

IB

0.5

A

VBE(sat)

1.6

2.2

V

VFEC

1.4

1.8

V

IFEC=0.5A

ton

0.5

µs

VCC 30V,

4 (Ta=25°C)

PT

W

16 (Tc=25°C)

Unit

Conditions

10

µA

VCB=50V

3

mA

VEB=6V

60

70

V

5000

10000

IC=1mA VCE=4V, IC=0.5A IC=0.5A, IB=1mA

Tj

150

°C

tstg

2.5

µs

IC=0.5A,

Tstg

–40 to +150

°C

tf

1.0

µs

IB1=–IB2=1mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

14

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

3 2 1

5

7

4 R1

9

6

8

R2

10

R1: 6kΩ typ R2: 400Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

2.5

(VCE=4V)

(VCE=4V)

10000

mA 10

IB =

50m

A

10000

hFE-IC Temperature Characteristics (Typical)

5m

2

A

2m

typ

A

A 1m

mA 0.5

1000

hFE

0.3m

hFE

IC (A)

1.5

C 5° 12 °C 75 °C 25

1000

A

C 0° –3

1

100

100

0.5

0 0

1

2

3

4

5

30 0.01

6

0.1

VCE (V)

1

2.5

30 0.01

0.1

VCE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Temperature Characteristics (Typical)

(IB=2mA)

3

2.5

1

IC (A)

IC (A)

IC-VBE Temperature Characteristics (Typical)

(IC=0.5A)

3

(VCE=4V)

2.5

25°C

–30°C

1.5

–30°C

25°C

0.5

125°C

0 0.01

75°C

125°C

75°C

1

1

0.1

1

0 0.05 0.1

5

1

IC (A)

10

0 0

100

125 °C 75° C 25°C –30°C

1

2

IC (A)

2

VCE (sat) (V)

VCE (sat) (V)

2

1

θ j-a-PW Characteristics

PT-Ta Characteristics

30

20

2

3

VBE (V)

IB (mA)

Safe Operating Area (SOA) 5 10

With Silicone Grease Natural Cooling Heatsink: Aluminum

0µ S

S

1

IC (A)

fin ite

10

mS

In He

PT (W)

10

ith

5

W at k

sin

θ j–a (°C / W)

1m

15

10

0.1

100

0.01 1

5 Without Heatsink

1 1

10

100

PW (mS)

1000

0 –40

Single Pulse Without Heatsink Ta=25°C

0

50

Ta (°C)

150

10

100

VCE (V)

185

STA485A

NPN Darlington With built-in avalanche diode

Absolute maximum ratings

External dimensions D

•••

STA (10-pin)

Electrical characteristics

(Ta=25°C)

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

ymbol

VCBO

100±15

V

ICBO

VCEO

100±15

V

IEBO

VEBO

6

V

VCEO

85

IC

1

A

hFE

2000

ICP

2.5 (PW≤1ms, Du≤25%)

A

VCE(sat)

1.0

1.5

V

IB

0.5

A

VBE(sat)

1.6

2.2

V

VFEC

1.4

1.8

V

IFEC=0.5A

ton

0.5

µs

VCC 30V,

4 (Ta=25°C)

PT

W

16 (Tc=25°C)

Unit

Conditions

10

µA

VCB=85V

3

mA

VEB=6V

100

115

V

5000

10000

IC=1mA VCE=4V, IC=0.5A IC=0.5A, IB=1mA

Tj

150

°C

tstg

2.5

µs

IC=0.5A,

Tstg

–40 to +150

°C

tf

1.0

µs

IB1=–IB2=1mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

14

pF

VCE=10V, f=1MHz

■Equivalent circuit diagram

3

5

2 1

7

4 R1

9

6

8

R2

10

R1: 5kΩ typ R2: 400Ω typ

Characteristic curves IC-VCE Characteristics (Typical) 2.5

5000

A 1m

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

10000

A 2m

IB= 5m A

(VCE=4V)

20000 10000

typ

A 0.5m

A 0.3m

1000

A 0.2m

hFE

1.5

hFE

IC (A)

2

hFE-IC Characteristics (Typical)

500

1000 C 5° 12 °C 75

1 100

°C 25 C 0° 3 –

100

0.5 50

0 0

1

2

4

3

5

20 0.01

6

0.1

VCE (V)

1

30 0.01

2.5

0.1

VCE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Temperature Characteristics (Typical)

(IB=2mA)

3

1

2.5

IC (A)

IC (A)

IC-VBE Temperature Characteristics (Typical)

(IC=0.5A)

3

(VCE=4V)

2.5

125°C 75°C

2

–30°C

25°C

1

–30°C

2

1.5

IC (A)

2

VCE (sat) (V)

VCE (sat) (V)

25°C

1

1 0.5 12

5 °C 7 5° C 25° C –30 °C

125°C 75°C

0 0.01

0.1

1

IC (A)

0 0.05 0.1

5

1

10

0 0

100

1

θ j-a-PW Characteristics

PT-Ta Characteristics

30

2

3

VBE (V)

IB (mA)

Safe Operating Area (SOA) 5

20

S 0µ 10

With Silicone Grease Natural Cooling Heatsink: Aluminum

10

15

m

1

IC (A)

te

i fin at

He k

sin

PT (W)

In

10

S 1m

ith

θ j–a (°C / W)

S

W

10

0.1

5 5 Without Heatsink

Single Pulse Without Heatsink Ta=25°C

2 1

5

10

50

100

PW (mS)

186

500 1000

0 –40

0

50

Ta (°C)

100

150

0.01 1

10

VCE (V)

100

200

STA501A Absolute maximum ratings Symbol

N-channel General purpose (Ta=25°C)

Ratings

External dimensions D

•••

STA (10-pin)

Electrical characteristics

Unit

Symbol

(Ta=25°C)

Specification min typ max

VDSS

60

V

V(BR)DSS

VGSS

±10

V

IGSS

ID

±5

A

IDSS

ID(pulse)

±20 (PW≤100µs, Du≤1%)

A

VTH

1.0

Re(yfs)

2.0

Unit

Conditions

V

ID=250µA, VGS=0V

±500

nA

VGS=±10V

250

µA

VDS=60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=2.5A

0.15

0.20

Ω

VGS=10V, ID=2.5A

0.23

0.28

60

4 (Ta=25°C)

W

20 (Tc=25°C)

W

Tch

150

°C

RDS(ON)

Ω

VGS=4V, ID=2.5A

Tstg

–40 to +150

°C

Ciss

400

pF

VDS=25V,

Coss

160

pF

f=1.0MHz,

Crss

35

pF

VGS=0V

td(on)

20

ns

ID=2.5A,

tr

25

ns

VDD 30V,

td(off)

40

ns

RL=12Ω,

tf

20

ns

VGS=5V, see Fig. 3 on page 16.

V

ISD=5A, VGS=0V

ns

ISD=±100mA

PT

■Equivalent circuit diagram 3

2

5

4

7

6

1

9

8

VSD

1.0

trr

150

1.5

10

Characteristic curves

187

STA504A

N-channel General purpose

Absolute maximum ratings Symbol

(Ta=25°C)

Ratings

Electrical characteristics

Unit

Symbol

VDSS

60

V

V(BR)DSS

VGSS

±20

V

IGSS

(Ta=25°C)

Specification min typ max

ID

±4

A

IDSS

±8 (PW≤100µs, Du≤1%)

A

VTH

2.0

4 (Ta=25°C)

W

Re(yfs)

1.2

20 (Tc=25°C)

W

RDS(ON)

0.33

Unit

Conditions

V

ID=100µA, VGS=0V

±100

nA

VGS=±20V

100

µA

VDS=60V, VGS=0V

4.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=2A

0.45

Ω

VGS=10V, ID=2A

60

ID(pulse) PT Tch

150

°C

Ciss

120

pF

VDS=25V,

Tstg

–40 to +150

°C

Coss

60

pF

f=1.0MHz,

■Equivalent circuit diagram 3

2

5

4

7

6

1

Characteristic curves

188

External dimensions D • • • STA (10-pin)

9

8

10

Crss

14

VSD

1.1

trr

100

1.5

pF

VGS=0V

V

ISD=4A, VGS=0V

ns

ISD=±100mA

STA505A

N-channel General purpose

Absolute maximum ratings

(Ta=25°C)

External dimensions D

(Ta=25°C)

Unit

Symbol

100

V

V(BR)DSS

100

±20

V

IGSS

ID

±3

A

IDSS

ID(pulse)

±12 (PW≤100µs, Du≤1%)

A

VTH

1.0

Re(yfs)

2.0

Ratings

VDSS VGSS

4 (Ta=25°C)

W

20 (Tc=25°C)

W

Tch

150

°C

Tstg

–40 to +150

°C

PT

■Equivalent circuit diagram 3

2

5

4

7

6

1

9

STA (10-pin)

Electrical characteristics Specification min typ max

Symbol

•••

RDS(ON) Ciss

Unit

Conditions

V

ID=100µA, VGS=0V

±100

nA

VGS=±20V

100

µA

VDS=100V, VGS=0V

2.0

V

VDS=10V, ID=250µA

3.0

S

VDS=10V, ID=1.5A

0.35

0.50

Ω

VGS=10V, ID=1.5A

0.40

0.60

240

Ω

VGS=4V, ID=1.5A

pF

VDS=25V,

Coss

60

pF

f=1.0MHz,

Crss

12

pF

VGS=0V

V

ISD=3A, VGS=0V

ns

ISD=±100mA

VSD

1.0

trr

150

1.5

8

10

Characteristic curves

189

STA506A

N-channel General purpose

Absolute maximum ratings

External dimensions D

Symbol

100

V

V(BR)DSS

100

±20

V

IGSS

VDSS VGSS ID

±2

A

IDSS

ID(pulse)

±5 (PW≤100µs, Du≤1%)

A

VTH

1.0

Re(yfs)

1.5

EAS*

V

ID=100µA, VGS=0V VGS=±20V

100

µA

VDS=100V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=1A

0.55

0.80

Ω

VGS=10V, ID=1A

0.70

0.95

mJ W

20 (Tc=25°C)

W

Tch

150

°C

Ciss

150

Tstg

–40 to +150

°C

Coss Crss

* : VDD=25V, L=2.2mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 3

5

7

4

2

9

6

2.0

Ω

VGS=4V, ID=1A

pF

VDS=25V,

45

pF

f=1.0MHz,

9

pF

VGS=0V

td(on)

15

ns

ID=1A,

tr

30

ns

VDD 50V,

td(off)

40

ns

RL=50Ω,

tf

30

ns

VGS=5V, see Fig. 3 on page 16.

V

ISD=2A, VGS=0V

ns

ISD=±100mA

VSD

1.0

trr

160

8

1

Conditions

nA

5.6

RDS(ON)

Unit

±100

4 (Ta=25°C) PT

(Ta=25°C)

Unit

Ratings

STA (10-pin)

Electrical characteristics

(Ta=25°C)

Specification min typ max

Symbol

•••

1.5

10

Characteristic curves ID-VDS Characteristics (Typical)

ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

(VDS=10V)

5

0.8

5 5V

10V

TC=–40°C VGS=4V

4V

4

4

VGS=10V

(Ω)

3 25°C 125°C

2

2

(ON)

3.5V

0.4

RDS

3

ID (A)

ID (A)

0.6

VGS=3V

0.2

1

0

1

0

2

4

6

8

0

10

0

2

Re(yfs)-ID Characteristics (Typical)

4

0

1

2

3

4

5

ID (A)

RDS(ON)-TC Characteristics (Typical)

Capacitance-VDS Characteristics (Typical)

(VDS=10V)

5

0

6

VGS (V)

VDS (V)

(ID=1A)

1.5

VGS=0V f=1MHz

500

TC=–40°C 25°C

(ON)

(Ω)

VGS=4V

1.0

VGS=10V

RDS

Re (yfs) (S)

Capacitance (pF)

Ciss

125°C

1

0.5

100

0.5

50

Coss

10 Crss

0.3 0.05

0.1

0.5

1

5

0 –40

5

0

ID (A)

50

150

100

0

10

20

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

Safe Operating Area (SOA)

With Silicone Grease Natural Cooling Heatsink: Aluminum

I D (pulse) max

5

25

(O

PT (W)

DS

R

ID (A)

1

t)

IDR (A)

ho

s (1

4V

20

s m

3

s

10

N)

LI

1m

M

IT ED

s 0µ

10

4

10V

50

30

10

2

40

VDS (V)

TC (°C)

5

30

0.5

W ith

15

10

1

In fin ite

He at sin k

5 Without Heatsink VGS=0V

0

0

0.5

1.0

VSD (V)

190

1.5

0.1 0.5

0

1

5

10

VDS (V)

50

100

0

50

100

Ta (°C)

150

SDA01

PNP Darlington General purpose

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VCBO

–60

V

ICBO

VCEO

–60

V

IEBO

•••

SD

(Ta=25°C)

Specification min typ max

Unit

Conditions

–10

µA

VCB=–60V

–3

mA

VEB=–6V

VEBO

–6

V

VCEO

–60

IC

–1.5

A

hFE

2000

V

ICP

–2.5 (PW≤1ms, Du≤10%)

A

VCE(sat)

–1.4

V

IB

–0.1

A

VBE(sat)

–2.2

V

PT

3 (Ta=25°C)

W

Tj

150

°C

Tstg

–40 to +150

°C

θ j–a

41.6

°C/W

IC=–10mA

12000

VCE=–4V, IC=–1A IC=–1A, IB=–2mA

■Equivalent circuit diagram

2 R1

4

6

8

R2

1

3

5

15,16

7

13,14

11,12

9,10

R1: 4kΩ typ R2: 100Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

–2.5 IB=–5mA

–1.2m

A

A –1.0m

–2mA

–2.0

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000

(VCE=–4V)

10000 5000

5000 typ

A –0.8m A –0.6m

1000

–0.4mA

–1.0

Ta

1000

hFE

–0.5mA

=1

hFE

IC (A)

–1.5

500

°C 25 C ° 75 °C 25 C 0° –3

500

–0.3mA

–0.5 100

0 0

–1

–2

–3

–4

–5

100

50 –0.03 –0.05

–6

–0.1

–0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

–1

50 –0.03 –0.05

–2.5

–0.5

–1

–2.5

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–0.1

IC (A)

(VCE=–4V)

–2.5

–3

25°C

Ta=125°C

–1.5 IC=–2A

–1.0

IC=–1A

–1

IC=–0.5A

75°C

0 –0.2

–0.5

Ta= 125 °C 75° C 25° C –30 °C

–30°C

–1

–2

IC (A)

–2

VCE (sat) (V)

VCE (sat) (V)

–2.0

–0.5

–1

0 –0.1

–2.5

–0.5

–1

–5

–10

0 0

–50

–1

θ j-a-PW Characteristics

PT-Ta Characteristics 3

50

–2

Safe Operating Area (SOA) –5

4

10

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

3

0µ s

IC (A)

PT (W)

1

s m 10

5

–1

s 1m

θ j–a (°C / W)

2

2

10

–3

VBE (V)

IB (mA)

IC (A)

–0.5

1 Single Pulse

–0.1 Without Heatsink Ta=25°C

1 1

5

10

50

100

PW (mS)

500 1000

0 0

50

100

Ta (°C)

150

–0.05 –3

–5

–10

–50

–100

VCE (V)

191

SDA05

PNP Darlington 3-phase motor drive

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

•••

SD

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

–60

V

ICBO

VCEO

–60

V

IEBO

VEBO

–6

V

VCEO

–60

IC

–4

A

hFE

2000

ICP

–6 (PW≤1ms, Du≤50%)

A

VCE(sat)

–1.5

V

IB

–0.5

A

VBE(sat)

–2.0

V

PT

2.6 (Ta=25°C)

W

VFEC

V

IFEC=1A

Tj

150

°C

ton

0.4

µs

VCC –30V,

Tstg

–40 to +150

°C

tstg

0.8

µs

IC=–3A,

tf

0.6

µs

IB1=–IB2=–10mA

fT

200

MHz

VCE=–12V, IE=0.2A

Cob

75

pF

VCB=–10V, f=1MHz

■Equivalent circuit diagram 2 R1

4

8

Unit

Conditions

–10

µA

VCB=–60V

–10

mA

VEB=–6V

V

IC=–10mA

12000

VCE=–4V, IC=–3A

1.8

IC=–3A, IB=–6mA

R2

1

3

7

15,16

13,14

R1: 2kΩ typ R2: 150Ω typ

9,10

*Pins 5, 6, 11, 12 : NC

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

–6 IB= –2 .2m A

A –1.8m

–1.5mA

hFE-IC Temperature Characteristics (Typical)

(VCE=–4V)

10000 5000

(VCE=–4V)

10000 5000

typ

–1.2mA –1.0mA –0.9mA

–0.8mA

°C 25 =1 Ta

1000

1000

hFE

hFE

IC (A)

–4

C 0° –3

500

500 –2

75°C

100

100 0 0

–2

–4

50 –0.03 –0.05 –0.1

–6

–0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

25°C

–1

50 –0.03 –0.05 –0.1

–5 –6

–0.5

–1

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

–3

–5 –6

IC (A)

(VCE=–4V) –6

–3

–2

Ta=–30°C

75°C

–1

25°C

–2

IC=–2A IC=–1A

125°C

0 –0.5

–1

–1

–5 –6

IC (A)

0 –0.3 –0.5

–1

–5

–10

0 0

–50 –100 –200

–1

θ j-a-PW Characteristics

PT-Ta Characteristics –10 –5

10 m s

2

2 1

IC (A)

5

PT (W)

θ j–a (°C / W)

s 1m

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation

10

–3

Safe Operating Area (SOA)

3 3

–2

VBE (V)

IB (mA)

20

–30°C

–1

–3

IC=–4A

Ta=1 25°C

75°C

IC (A)

25°C

–4

–2

VCE (sat) (V)

VCE (sat) (V)

–5

–1 –0.5

1 1

–0.1 Single Pulse

–0.05 Without Heatsink 0.5 1

5

10

50

100

PW (mS)

192

500 1000

0 0

Ta=25°C

50

100

Ta (°C)

150

–0.03 –3

–5

–10

–50

VCE (V)

–100

SDC01

NPN General purpose

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

•••

SD

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

Unit

Conditions

VCBO

80

V

ICBO

10

µA

VCB=80V

VCEO

50

V

ICES

100

µA

VCES=50V

VEBO

6

V

IEBO

10

µA

VEB=6V

IC

2

A

VCEO

50

V

IC=10mA

ICP

3 (PW≤1ms, Du≤10%)

A

hFE

500

IB

0.5

A

VCE(sat)

0.4

V

PT

3 (Ta=25°C)

W

VBE(sat)

1.1

V

Tj

150

°C

fT

Tstg

–40 to +150

°C

θ j–a

41.6

°C/W

2000

VCE=4V, IC=0.5A

40

IC=0.5A, IB=5mA

MHz

VCE=12V, IE=–0.1A

■Equivalent circuit diagram 15,16

1

13,14

3

11,12

9,10

5

2

7

4

6

8

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

IB=100mA

2000

1.8

(VCE=4V)

2000 75°C

mA 10

1.6

30

mA

Ta=125°C

1.4

25°C

A

1000

5m

1000

–30°C

3mA

1.2

0.8

hFE

hFE

IC (A)

500

500

2mA

1.0 1mA

0.6 0.4

100

100

0.2 0 0

1

2

3

4

5

50 0.01

6

0.1

VCE(sat)-IC Temperature Characteristics (Typical)

50 0.01

3

0.1

1

3

IC (A)

VCE(sat)-IB Temperature Characteristics (Typical)

(IC / IB=500)

1.5

1

IC (A)

VCE (V)

IC-VBE Temperature Characteristics (Typical)

(IC=0.5A)

1.5

(VCE=4V)

1.8 1.6

1.0 0.8

25°C

0.5

25°C

–30°C

0.5

75°C

0.6

–30°C

0.4

75°C 25°C –30°C

75°C 25°C

1.2 Ta=125°C

Ta=1

Ta=125°C

1.0

IC (A)

VCE (sat) (V)

VCE (sat) (V)

1.4 1.0

0.2 0 0.05

0.1

0.5

0 0.5

1

1

10

IC (A)

0 0

100

0.5

θ j-a-PW Characteristics

PT-Ta Characteristics

50

3

1.0

1.5

VBE (V)

IB (mA)

Safe Operating Area (SOA) 5

4

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

3

100µs

1m

2

10

1

IC (A)

s

PT (W)

m

θ j–a (°C / W)

s

2

10

1

1

1 0.5 0.1

Single Pulse Without Heatsink Ta=25°C

0.1

1

10

PW (mS)

100

1000

0 0

50

100

Ta (°C)

150

0.05 1

10

100

VCE (V)

193

SDC03

NPN Darlington With built-in avalanche diode

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

Symbol

Ratings

Unit

Symbol

VCBO

60±10

V

ICBO

VCEO

60±10

V

IEBO

SD

(Ta=25°C)

Specification min typ max 1.1

•••

Unit

Conditions

10

µA

VCB=50V

3.5

mA

VEB=6V

V

VEBO

6

V

VCEO

50

60

70

IC

1.5

A

hFE

2000

5000

12000

ICP

2.5 (PW≤1ms, Du≤10%)

A

VCE(sat)

1.2

1.4

V

IB

0.1

A

VBE(sat)

1.8

2.2

V

PT

3 (Ta=25°C)

W

VFEC

1.3

1.8

V

IFEC=1A

Tj

150

°C

ton

0.5

µs

VCC 30V,

Tstg

–40 to +150

°C

tstg

4.0

µs

IC=1A,

θ j–a

41.6

°C/W

tf

1.0

µs

IB1=–IB2=2mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

25

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

15,16 1

13,14

11,12

3

5

IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA

9,10 7

R1 R2 2

4

6

8

R1: 3.5kΩ typ R2: 200Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

2.5 2m A 1m A

IB=10mA

2.0

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

10000

(VCE=4V)

10000

typ

mA 0.6

5000

m 0.4

5000 °C 25 =1 5°C 7 Ta °C 25 C 0° –3

A

A .3m

0

1.0

1000

1000

hFE

hFE

IC (A)

1.5

500

500

100

100

0.5

0 0

1

2

3

4

6

5

50 0.03 0.05

0.1

0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

1

50 0.03 0.05

2.5

0.5

1

2.5

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

3

0.1

IC (A)

(VCE=4V)

2.5

3

2.0

–30°C

1

2 IC=2A

1.0

1A

1

1.5

Ta= 125 75°C °C 25°C –30°C

75°C 25°C

IC (A)

VCE (sat) (A)

VCE (sat) (V)

Ta=125°C

2

0.5A

0.5

0 0.2

0.5

1

0 0.1

2.5

0.5

1

5

10

0 0

50 100

1

θ j-a-PW Characteristics

PT-Ta Characteristics

50

3

2

Safe Operating Area (SOA) 5

4

10

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

0µ

3

S 1m S

2

10

2

5

1

IC (A)

PT (W)

10

mS

θ j–a (°C / W)

3

VBE (V)

IB (mA)

IC (A)

1

0.5

1 Single Pulse

0.1 Without Heatsink Ta=25°C

1 1

5

10

50 100

PW (mS)

194

500 1000

0 0

50

100

Ta (°C)

150

0.05 3

5

10

50

VCE (V)

100

SDC04

NPN Darlington External dimensions E

With built-in avalanche diode

Absolute maximum ratings

Electrical characteristics

(Ta=25°C)

•••

SD

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

100±15

V

ICBO

VCEO

100±15

V

IEBO

VEBO

6

V

VCEO

85

IC

1.5

A

hFE

2000

ICP

2.5 (PW≤1ms, Du≤10%)

A

VCE(sat)

1.0

1.3

V

IB

0.1

A

VBE(sat)

1.7

2.2

V

PT

3 (Ta=25°C)

W

VFEC

1.2

1.8

V

IFEC=1A

Tj

150

°C

ton

0.6

µs

VCC 30V,

Tstg

–40 to +150

°C

tstg

3.0

µs

IC=1A,

θ j–a

41.6

°C/W

tf

1.0

µs

IB1=–IB2=2mA

fT

30

MHz

VCE=12V, IE=–0.1A

Cob

20

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

13,14

15,16 3

1

11,12 5

Unit

Conditions

10

µA

VCB=85V

3

mA

VEB=6V

100

115

V

5000

12000

1

IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA

9,10 7

R1 R2 2

4

6

8

R1: 4kΩ typ R2: 150Ω typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

2.5 IB=5mA

A 0.5m

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

20000 10000

1mA

(VCE=4V)

20000 10000

typ

2.0

5000

5000 =1 Ta

1.0

hFE

1.5

hFE

IC (A)

A 0.3m

1000

1000

–3

0°

C

500

500

0.2mA

°C 25 °C 75 C ° 25

0.5 100

0 0

1

2

3

4

5

100

50 0.03 0.05

6

0.1

0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

50 0.03 0.05

2.5

0.1

0.5

1

2.5

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

2

1

IC (A)

3

(VCE=4V)

2.5

Ta=125°C 75°C

IC=2A

1.0 1 IC-1A

25°C –30°C

0 0.3

0.5

0.5

1

0 0.1

2.5

0.5

1

5

10

0 0

50 100

1

IB (mA)

IC (A)

θ j-a-PW Characteristics 3

4

Safe Operating Area (SOA)

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

2

10 1m

1

PT (W)

IC (A)

2

5

3

5

3

10

2

VBE (V)

PT-Ta Characteristics

50

θ j–a (°C / W)

1.5

Ta= 125 °C 75°C 25°C –30°C

1

IC=4A

IC (A)

VCE (sat) (V)

VCE (sat) (V)

2.0 2

1

0µ

s

s

10

ms

0.5

1

0.1 Single Pulse

0.05 Without Heatsink 1 1

5

10

50

PW (mS)

100

500 1000

0 0

50

100

Ta (°C)

150

0.03 3

Ta=25°C

5

10

50

100

VCE (V)

195

SDC06

NPN With built-in avalanche diode

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

SD

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

30 to 45

V

ICBO

VCEO

30 to 45

V

IEBO

VEBO

6

V

VCEO

30

IC

2

A

hFE

400

ICP

3 (PW≤1ms, Du≤10%)

A

IB

30

mA

PT

3 (Ta=25°C)

W

VFEC

V

IFEC=1A

Tj

150

°C

ton

1.2

µs

VCC 10V,

Tstg

–40 to +150

°C

tstg

18.0

µs

IC=0.5A,

θ j–a

41.6

°C/W

tf

3.6

µs

IB1=5mA, IB2=0A

fT

20

MHz

VCE=12V, IE=–0.2A

Cob

50

pF

VCB=10V, f=1MHz

mJ

L=10mH, Single pulse

1.2

13,14

3

RB

11,12

5

RB

RBE

RBE 2

RB: 800Ω typ

10

µA

VCB=30V

mA

VEB=6V

45

V

IC=10mA

2000

VCE=4V, IC=0.5A

0.2

V

IC=0.5A, IB=5mA

0.6

V

IC=1A, IB=5mA

40

RB

RBE 4

Conditions

9,10

7

RB

Unit

2.8

2.0

ES/B 15,16

700

VCE(sat)

■Equivalent circuit diagram

1

•••

RBE 6

8

RBE: 2kΩ typ

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical) (VCE=4V)

1000

3 12 m A

IB=30mA

hFE-IC Temperature Characteristics (Typical) (VCE=4V)

1000

typ

8mA

5mA

500

500

2

Ta=125°C 75°C

hFE

hFE

IC (A)

3mA 2mA

25°C

1

–30°C 1mA

0 0

1

2

3

4

5

6

100 0.03 0.05

0.1

0.5

VCE (V)

VCE(sat)-IC Temperature Characteristics (Typical)

3

100 0.03 0.05

0.1

0.5

1

3

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=100)

3

1

=1 25 °C 75° C 25 °C

VCE (sat) (V)

2

Ta

VCE (sat) (V)

1

IC (A)

1

IC=1A

IC=0.5A

–30°C

0 0.2

0.5

1

0 1

3

5

IC (A)

10

30

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

50

3

Safe Operating Area (SOA) 5

4

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

3

1mS

2

5

1

0.5

1

1 1

5

10

50 100

PW (mS)

196

1

IC (A)

10

PT (W)

θ j–a (°C / W)

2

500 1000

0 0

50

100

Ta (°C)

150

0.1 5

Single Pulse Without Heatsink Ta=25°C

10

50

VCE (V)

SDC07

NPN Darlington 3-phase motor drive

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

•••

SD

(Ta=25°C)

Specification min typ max

Symbol

Ratings

Unit

Symbol

VCBO

60

V

ICBO

VCEO

60

V

IEBO

VEBO

6

V

VCEO

60

IC

4

A

hFE

2000

ICP

6 (PW≤1ms, Du≤50%)

A

VCE(sat)

1.5

V

IB

0.5

A

VBE(sat)

2.0

V

PT

2.6 (Ta=25°C)

W

VFEC

V

IFEC=1A

Tj

150

°C

ton

1.0

µs

VCC 30V,

Tstg

–40 to +150

°C

tstg

4.0

µs

IC=3A,

tf

1.5

µs

IB1=–IB2=10mA

fT

75

MHz

VCE=12V, IE=–0.1A

Cob

50

pF

VCB=10V, f=1MHz

■Equivalent circuit diagram

13,14

15,16

Conditions

10

µA

VCB=60V

10

mA

VEB=6V

V

IC=10mA

12000

VCE=4V, IC=3A

1.8

IC=3A, IB=6mA

9,10

3

1

Unit

7

R1 R2 2

4

R1: 3kΩ typ R2: 200Ω typ

8

*Pins 5, 6, 11, 12 : NC

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V) 6 IB=4.0mA

2.0mA

4

20000

10000

10000 Typ

5000

1.2mA

(VCE=4V)

20000

5000 25

Ta

0.6mA

1000

0.5mA

500

°C

°C

25

C 0°

–3

500

100

100

2

4

50 0.03 0.05

6

0.1

0.5

VCE(sat)-IC Temperature Characteristics (Typical)

1

50 0.03 0.05

56

IC-VBE Temperature Characteristics (Typical) (VCE=4V) 6

3

75°C 25°C

IC (A)

–30

VCE (sat) (V)

°C

°C 125

4

2

IC=4A

3

IC=2A

1

2 IC=1A

1

1

5

56

5

1

0 0.5

1

VCE(sat)-IB Characteristics (Typical)

3

Ta=

0.5

IC (A)

(IC / IB=1000)

2

0.1

IC (A)

VCE (V)

Ta= 125 75°C °C 25°C –30°C

0 0

0 0.2

6

0.5

1

5

IC (A)

θ j-a-PW Characteristics

10

50

0 0

100 200

1

2

3

IB (mA)

VBE (V)

PT-Ta Characteristics

Safe Operating Area (SOA)

3

20

10

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation

3

5 ms

2

s 1m

10

10

2 1

1

IC (A)

5

PT (W)

θ j–a (°C / W)

°C

75

0.4mA

2

VCE (sat) (V)

=1

1000

hFE

hFE

IC (A)

0.8mA

0.5

1 0.1

1

Single Pulse

0.05 Without Heatsink 0.5 1

5

10

50 100

PW (mS)

500 1000

0 0

50

100

Ta (°C)

150

0.03 3

Ta=25°C

5

10

50

100

VCE (V)

197

SDH02

NPN Darlington With built-in flywheel diode

Absolute maximum ratings

External dimensions E

Electrical characteristics

(Ta=25°C)

Ratings

Unit

Symbol

VCBO

120

V

ICBO

VCEO

100

V

IEBO

VEBO

6

V

VCEO

100

IC

1.5

A

hFE

2000

ICP

2.5 (PW≤1ms, Du≤10%)

A

IB

0.2

A

Unit

Conditions

10

µA

VCB=120V

3

mA

VEB=6V

V 6000

12000

VCE(sat)

1.1

1.3

V

VBE(sat)

1.7

2.2

V

IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA

IF

1.5

A

ton

0.5

VCC 30V,

2.5 (PW≤0.5ms, Du≤10%)

µs

IFSM

A

tstg

4.5

µs

IC=1A,

VR

120

V

PT

3 (Ta=25°C)

W

Tj

150

°C

Tstg

–40 to +150

°C

tf

1.2

µs

IB1=–IB2=2mA

fT

50

MHz

VCE=12V, IE=–0.1A

Cob

20

pF

VCB=10V, f=1MHz

●Diode for flyback voltage absorption

■Equivalent circuit diagram

Specification min typ max

Symbol 16 15

14 13

12 11

10 9

VR

7

5

3

R 1 R2 2 4 R1: 2.5kΩ typ R2: 200Ω typ

IR trr

8

6

(Ta=25°C)

Unit

Conditions

V

IR=10µA

1.6

V

IF=1A

10

µA

VR=120V

ns

IF=±100mA

120

VF

1

SD

(Ta=25°C)

Specification min typ max

Symbol

•••

100

Characteristic curves IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical) (VCE=4V)

10000

2.5 IB=10mA

A 4m

A mA 2m 1.2 A 0.6m

hFE-IC Temperature Characteristics (Typical) (VCE=4V)

10000

typ

5000

5000

A 0.4m

2.0

Ta

hFE

1.5

hFE

IC (A)

0.3mA

1000

°C 25 C ° 75 C ° 25 C 0° –3

=1

1000

1.0

500

500

0.5

0 1

2

3

4

5

6

100 0.03 0.05

0.1

0.5

VCE(sat)-IC Temperature Characteristics (Typical)

100 0.03 0.05

2.5

0.1

0.5

1

2.5

IC (A)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

(IC / IB=1000)

3

1

IC (A)

VCE (V)

(VCE=4V)

2.5

3

–30°C

25°C

2

IC (A)

1.5 IC=2A

1.0

IC=1A

1

IC=0.5A

Ta=125°C

0.5

75°C

0 0.2

0.5

1

0 0.1

2.5

0.5

1

IC (A)

5

10

50

0 0

100

1

θ j-a-PW Characteristics

PT-Ta Characteristics 3

2

3

VBE (V)

IB (mA)

50

Safe Operating Area (SOA) 5

4

s

0µ

1m

2

10

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

3

s

PT (W)

10

5

IC (A)

s

m

10

1

2

θ j–a (°C / W)

Ta = 125 °C 75°C 25°C –30°C

1

VCE (sat) (V)

VCE (sat) (V)

2.0 2

1

0.5

1 0.1 Single Pulse

0.05 Without Heatsink

1 1

5

10

50 100

PW (mS)

198

500 1000

0 0

50

100

Ta (°C)

150

0.03 3

Ta=25°C

5

10

50

VCE (V)

100

SDH03

PNP + NPN Darlington H-bridge

External dimensions E

Absolute maximum ratings

•••

SD

(Ta=25°C)

Ratings

Symbol

NPN

PNP

Unit

VCBO

100

–60

V

VCEO

100

–60

V

VEBO

6

–6

V

IC

1.5

–1.5

A

ICP

2.5 (PW≤1ms, Du≤100%)

–2.5 (PW≤1ms, Du≤10%)

A

IB

0.1

–0.1

A

PT

3 (Ta=25°C)

W

Tj

150

°C

Tstg

–40 to +150

°C

θ j–a

41.6

°C/W

■Equivalent circuit diagram 2 R 3 R4

6

1 15 16

11 12

13 14

9 10

3

5

R3: 4kΩ typ R4: 100Ω typ

7

R1: 4kΩ typ R2: 200Ω typ

R1 R2 4

8

Characteristic curves IC-VCE Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

NPN

PNP

2.5

NPN

A A

2.0

–2.0

0.4m

–1.2mA

–2m A

A 4m

IB=–5m

IB=10mA

(VCE=4V)

2.5

–2.5 A mA 2m 1.2 A 0.6m

–1.0mA

2.0 –0.8mA –0.6mA

1.5

IC (A)

–0.5mA

–1.0

–0.4mA

0.5

–0.5

–0.3mA

1.0

Ta=

1.0

125 °C 75°C 25°C –30°C

–1.5

1.5

IC (A)

IC (A)

0.3mA

0 1

2

3

4

5

0 0

6

–1

–2

VCE (V)

–3

–4

0.5

–5

0 0

–6

1

VCE (V)

2

3

VBE (V)

hFE-IC Characteristics (Typical) NPN

PNP

(VCE=4V)

10000

typ

PNP

(VCE=–4V)

10000 5000

5000

Typ

–2.0

–1.5

1000

IC (A)

hFE

1000

hFE

(VCE=–4V)

–2.5

500

–1.0 500

Ta=125°C 75°C 25°C –30°C

–0.5

100 50 100 0.03 0.05

0.1

0.5

1

30 –0.03

2.5

–0.05

–0.1

–0.5

IC (A)

–1

–2.5

hFE-IC Temperature Characteristics (Typical) NPN

PNP (VCE=4V)

10000

5000 2 =1

5°

C

7

C 5°

°C 25 C 0° –3

1000

Ta

hFE

Ta

hFE

(VCE=–4V)

10000

5000

1000

500

°C 25 =1 5°C 7 °C 25 C 0° –3

500

100

100 0.03 0.05

0.1

0.5

IC (A)

200

1

2.5

50 –0.03 –0.05 –0.1

0 0

–1

–2

VBE (V)

IC (A)

–0.5

IC (A)

–1

–2.5

–3

SDH03 Electrical characteristics

(Ta=25°C)

NPN Symbol

Specification min

typ

Conditions

10

µA

VCB=100V

3

mA

VEB=6V

V

IC=10mA

–60

VCE=4V, IC=1A

2000

IEBO VCEO

100

hFE

2000

Specification

Unit

max

ICBO

PNP

12000

VCE(sat)

1.3

V

VBE(sat)

2.2

V

min

typ

Unit

Conditions

–10

µA

VCB=–60V

–3

mA

VEB=–6V

V

IC=–10mA

max

12000

IC=1A, IB=2mA

VCE=–4V, IC=–1A

–1.4

V

–2.2

V

IC=–1A, IB=–2mA

Characteristic curves θ j-a-PW Characteristics

VCE(sat)-IB Characteristics (Typical) PNP –3

2

–2

IC=2A IC=1A

1

IC=0.5A

0 0.1

0.5

1

5

NPN 50

IC=–2A

IC=–1A

–1

θ j–a (°C / W)

3

VCE (sat) (V)

VCE (sat) (V)

NPN

10

5

IC=–0.5A

10

50

0 –0.1

100

–0.5

–1

–5

IB (mA)

–10

1 1

–50

5

10

50 100

500 1000

PW (mS)

IB (mA)

VCE(sat)-IC Temperature Characteristics (Typical)

25°C

–30°C

–2

°C Ta=–30

–1

75°C

PNP

(IC / IB=1000)

–3

VCE (sat) (V)

VCE (sat) (V)

2

1

PNP

(IC / IB=1000)

3

50

θ j–a (°C / W)

NPN

25°C

10

5

Ta=125°C

125°C

75°C

0 0.2

0.5

1

0 –0.2

2.5

–0.5

–1

1 1

–2.5

5

50 100

500

1000

PW (mS)

Safe Operating Area (SOA)

PT-Ta Characteristics

NPN

PNP –5

5

3

4

1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation

10

3 s

s 0µ 10

0µ

2

s 1m

m

IC (A)

s

0.5

2

s m 10

s

10

–1

PT (W)

1m

1

IC (A)

10

IC (A)

IC (A)

–0.5

1

1 0.1 Single Pulse

–0.1 Without Heatsink

Single Pulse

0.05 Without Heatsink 0.03 Ta=25°C 3 5

Ta=25°C

10

50

VCE (V)

100

–0.05 –3

–5

–10

–50

VCE (V)

–100

0 0

50

100

150

Ta (°C)

201

SDK02

N-channel

Absolute maximum ratings Symbol

(Ta=25°C)

Ratings

Electrical characteristics

Unit

Symbol

VDSS

60

V

V(BR)DSS

VGSS

±10

V

IGSS

±2

A

IDSS

±3 (PW≤100µs, Du≤1%)

A

VTH

1.0

Re(yfs)

1.2

Unit

Conditions

V

ID=250µA, VGS=0V

nA

VGS=±10V

250

µA

VDS=60V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=1.0A

0.19

0.24

Ω

VGS=10V, ID=1.0A

0.25

0.30

IF

1.5

A

IFSM

2.5 (PW≤0.5ms, Du≤10%)

A

VR

120

V

Ω

VGS=4V, ID=1.0A

PT

3 (Ta=25°C, 4-circuit operation)

W

Ciss

400

pF

VDS=25V,

RDS(ON)

Tch

150

°C

Coss

160

pF

f=1.0MHz,

Tstg

–40 to +150

°C

Crss

35

pF

VGS=0V

V

ISD=2A, VGS=0V

ns

ISD=±100mA

16

1

15

14

3

2

13

12

5

4

11

10

7

6

Characteristic curves

8

9

VSD

1.0

trr

150

1.5

●Diode for flyback voltage absorption Symbol

min

VR

120

Specification typ max

Unit

Conditions

V

IR=10µA

VF

1.6

V

IF=1A

IR

100

µA

VR=120V

ns

IF=±100mA

trr

SD

±500

60

ID

•••

(Ta=25°C)

Specification min typ max

ID(pulse)

■Equivalent circuit diagram

202

External dimensions E

With built-in flywheel diode

100

SDK04

N-channel General purpose

Absolute maximum ratings

External dimensions E

(Ta=25°C)

Unit

Symbol

100

V

V(BR)DSS

100

±20

V

IGSS

ID

±2

A

IDSS

ID(pulse)

±5 (PW≤100µs, Du≤1%)

A

VTH

1.0

EAS*

2.7

mJ

Re(yfs)

1.5

PT

3 (Ta=25°C, 4-circuit operation)

W

Tch

150

°C

Tstg

–40 to +150

°C

Ratings

VDSS VGSS

* : VDD=25V, L=1mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram 15,16

1

13,14

3

2

11,12

5

4

9,10

7

6

SD

(Ta=25°C)

Specification min typ max

Symbol

•••

RDS(ON) Ciss

Unit

Conditions

V

ID=100µA, VGS=0V

±100

nA

VGS=±20V

100

µA

VDS=100V, VGS=0V

2.0

V

VDS=10V, ID=250µA

S

VDS=10V, ID=1.0A

0.60

0.80

Ω

VGS=10V, ID=1.0A

0.75

0.95

160

Ω

VGS=4V, ID=1.0A

pF

VDS=25V,

Coss

40

pF

f=1.0MHz,

Crss

10

pF

VGS=0V

td(on)

7

ns

ID=1A, VDD 50V,

tr

20

ns

RL=50Ω,

td(off)

35

ns

VGS=10V,

tf

30

ns

see Fig. 3 on page 16.

V

ISD=2A, VGS=0V

ns

ISD=±100mA

VSD

1.0

trr

140

1.5

8

Characteristic curves

203

Sanken Electric Co., Ltd. 1-11-1 Nishi -Ikebukuro,Toshima-ku, Tokyo PHONE: 03-3986-6164 FAX: 03-3986-8637 TELEX: 0272-2323(SANKEN J)

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●North America Allegro MicroSystems,Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615, U.S.A. PHONE: (508)853-5000 FAX: (508)853-7861

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