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Faculty of Engineering Department Of Electrical & Electronic Engineering EEE 3100 Electrical & Electronic Technology Lab 9: Verification of Ohm’s Law on Diode

NAME:

NOOR SUHAIDA GALIP

MATRIC NO: 140007 LECTURER: PN RIBHAN ZAFIRA ABDUL RAHMAN

TABLE OF CONTENTS

Contents Page Objectives 3 Equipments and Components

3

Results and Calculation

4

Discussion

7

Conclusion 8 Reference 9

2

LAB 9

:

VERIFICATION OF OHM’S LAW ON DIODE

OBJECTIVES: 1. To verify Ohm’s Law on Diode

EQUIPMENTS AND COMPONENTS: 1. Multimeter 2. DC Voltage Supply 3. Breadboard 4. Resistor: 1 kΩ 5. Diode NI 4001 6. Crocodile clips 7. Connecting wires

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RESULTS AND CALCULATION: a) FORWARD-BIAS DIODE

FIGURE 9.6

E (V) 0.2 0.4 0.6 0.7 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Vmeasured (V) 0.180 0.383 0.465 0.480 0.500 0.521 0.551 0.575 0.591 0.601 0.611 0.620 0.625 0.630

Imeasured (mA) 0.0002 0.031 0.175 0.240 0.331 0.469 0.869 1.330 1.770 2.410 2.960 3.500 3.920 4.370

Rdiode (Ω) 900000 12354.84 2657.14 2000.00 1510.57 1110.87 634.06 432.33 333.90 249.38 206.42 177.14 159.44 144.16 4

Table 1: Experimental Result For Voltage (V), Current (I) and R for Forward- Bias Diode

Graph V versus I 5

Current, I (mA)

4 3 2 1 0 Voltage, V (V)

Figure 1: Graph Vmeasured versus Imeasured

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b) REVERSE-BIAS DIODE

FIGURE 9

E (V)

Vmeasured (V)

Imeasured (mA)

Rdiode (Ω)

0.2 0.4 0.6 0.7 0.8 1.0 1.5 2.0 2.5

0.182 0.467 0.657 0.768 0.868 1.017 1.569 2.030 2.580

0 0 0 0 0 0 0 0 0

∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞

Table 2: Experimental Result For Voltage (V), Current (I) and R for Reserve - Bias Diode

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Gr aph Voltage , V (V) ve rs us Curr e nt, I (m A)

Current, I (mA)

1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Volate g, V (V)

Figure 2: Graph Vmeasured versus Imeasured

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DISCUSSIONS:

1. Based on the results that obtained from the experiment, it shows in reverse-bias diode the value of resistor is infinity because of the current is equal to zero. 2. This relationship obeys the Ohm’s Law which state that V = IR. 3. Current in circuit are equal to zero because of the current are going into one direction only because of the properties of the diode that not allowed it. 4. A p-n junction is a junction formed by combining P-type and N-type semiconductors together in very close contact. 5. Forward-bias occurs when the P-type semiconductor material is connected to the positive terminal of a battery and the N-type semiconductor material is connected to the negative terminal.

8. Connecting the P-type region to the negative terminal of the battery and the N-type region to the positive terminal produces the reversebias effect.

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CONCLUSION: As a conclusion, by using Ohm’s Law we can measured and determined the value of current, voltage and resistor on diode. The forward-bias and the reverse-bias properties of the p-n junction imply that it can be used as a diode. A p-n junction diode allows electric charges to flow in one direction, but not in the opposite direction; negative charges (electrons) can easily flow through the junction from n to p but not from p to n and the reverse is true for holes.

REFERENCES: •

Rizzoni, G., Principles and Applications of Electrical Engineering, McGraw Hill. 9

•

Floyd,

Electronic

Fundamentals:

Circuits,

Devices,

and

Appications, Pearson.

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