PD -94000
IRF7328 HEXFET® Power MOSFET ● ● ● ●
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel
VDSS -30V
RDS(on) max
ID
21mΩ@VGS = -10V
-8.0A
32mΩ@VGS = -4.5V
-6.8A
Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
S1 G1 S2 G2
1
8
D1
2
7
D1
3
6
4
5
D2 D2
SO-8
T o p V ie w
Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG
Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
Units
-30 -8.0 -6.4 -32 2.0 1.3 16 ± 20 -55 to + 150
V
W W mW/°C V °C
Max.
Units
62.5
°C/W
A
Thermal Resistance Parameter RθJA
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Maximum Junction-to-Ambient
1 10/04/00
IRF7328 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -30 ––– ––– ––– -1.0 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– -0.018 17 26.8 ––– ––– ––– ––– ––– ––– 52 9.8 8.3 13 15 198 98 2675 409 262
Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 21 VGS = -10V, ID = -8.0A mΩ 32 VGS = -4.5V, ID = -6.8A -2.5 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -8.0A -15 VDS = -24V, VGS = 0V µA -25 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 78 ID = -8.0A ––– nC VDS = -15V ––– VGS = -10V 20 VDD = -15V, VGS = -10.0V 23 ID = -1.0A ns 297 RG = 6.0Ω 147 RD = 15Ω ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units –––
–––
-2.0
–––
–––
-32
––– ––– –––
––– 37 36
-1.2 56 54
A V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V TJ = 25°C, I F = -2.0A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7328 100
VGS -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V
100
VGS -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V
10
1
-2.7V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
-2.7V 1
20µs PULSE WIDTH Tj = 150°C
20µs PULSE WIDTH Tj = 25°C 0.1
0.1 0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 ° C
TJ = 25 ° C 1
V DS = -15V 20µs PULSE WIDTH 3.0
4.0
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
0.1 2.0
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
6.0
ID = -8.0A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7328 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
3000
Ciss
2000
1000
Coss Crss
14
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
10
V DS =-24V V DS =-15V
12 10 8 6 4 2
0 1
ID = -8A
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
40
50
60
1000
100
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
10
100
TJ = 25 ° C
1
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig 7. Typical Source-Drain Diode Forward Voltage
100us 10 1ms
TC = 25 °C TJ = 150 °C Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
20
QG , Total Gate Charge (nC)
1.6
1 0.1
10ms 1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7328 10.0
VDS VGS
-ID , Drain Current (A)
8.0
RD
D.U.T.
RG
+
VDD
6.0
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit 2.0 td(on)
tr
t d(off)
tf
VGS 10%
0.0 25
50
75
100
125
150
TC , Case Temperature ( ° C) 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100 D = 0.50 0.20 10
0.10 PDM
0.05 0.02 0.01
1
t1 t2 SINGLE PULSE (THERMAL RESPONSE)
0.1 0.0001
0.001
0.01
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA 0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.060
RDS ( on ) , Drain-to-Source On Resistance (Ω )
( RDS(on), Drain-to -Source On Resistance Ω)
IRF7328
0.050
0.040
ID = -8.0A
0.030
0.020
0.010
0.000 3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.100
0.075
0.050 VGS = -4.5V VGS = -10V
0.025
0.000 0
10
20
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
30
40
50
60
70
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50KΩ
QG
12V
.2µF .3µF
10 V
D.U.T.
QGS
+VDS
QGD VGS -3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7328
SO-8 Package Details D IM
D -B -
5
8 E -A -
1
7
2
5
A 6
3
e 6X
5 H 0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4) B 8X 0 .25 (.01 0)
A1
L 8X
6
C 8X
M C A S B S
N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X
6 .46 ( .25 5 )
1 .78 (.07 0) 8X
1.27 ( .0 50 ) 3X
Part Marking
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7
IRF7328 Tape and Reel T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 3 0 .0 0 (1 2 .9 9 2 ) MAX.
1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
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8
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